JP2809191B2 - Semiconductor chip mounting method - Google Patents

Semiconductor chip mounting method

Info

Publication number
JP2809191B2
JP2809191B2 JP8109250A JP10925096A JP2809191B2 JP 2809191 B2 JP2809191 B2 JP 2809191B2 JP 8109250 A JP8109250 A JP 8109250A JP 10925096 A JP10925096 A JP 10925096A JP 2809191 B2 JP2809191 B2 JP 2809191B2
Authority
JP
Japan
Prior art keywords
semiconductor chip
mounting
module
board
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP8109250A
Other languages
Japanese (ja)
Other versions
JPH09298274A (en
Inventor
雄二 野田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP8109250A priority Critical patent/JP2809191B2/en
Publication of JPH09298274A publication Critical patent/JPH09298274A/en
Application granted granted Critical
Publication of JP2809191B2 publication Critical patent/JP2809191B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1532Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/15321Connection portion the connection portion being formed on the die mounting surface of the substrate being a ball array, e.g. BGA

Landscapes

  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体チップ等の
部品のプリント基板への実装方法に関する。
The present invention relates to a method for mounting components such as semiconductor chips on a printed circuit board.

【0002】[0002]

【従来の技術】図5は、従来の半導体チップ等の実装方
法の一例を示す断面図である。
2. Description of the Related Art FIG. 5 is a sectional view showing an example of a conventional method for mounting a semiconductor chip or the like.

【0003】図5に示すように、従来の半導体チップ等
の実装方法は、モジュール基板61上にマウント剤62
を使用して半導体チップ64を搭載し、ボンディングワ
イヤ63により半導体チップ64とモジュール基板61
間を電気的に接続した後、封止樹脂66により表面を保
護する。さらにモジュール基板61上に他の部品65
を、半田68により接続するという実装方法をとってい
た。以上の方法により半導体チップ64および他の部品
65を搭載したモジュール基板61をプリント基板67
上にリード69により電気的に接続する実装方法であっ
た。
As shown in FIG. 5, a conventional mounting method for a semiconductor chip or the like uses a mounting agent 62 on a module substrate 61.
The semiconductor chip 64 is mounted by using the
After the electrical connection is made, the surface is protected by the sealing resin 66. Further, another component 65 is placed on the module substrate 61.
Are connected by a solder 68. The module board 61 on which the semiconductor chip 64 and the other components 65 are mounted is mounted on the printed board 67
This is a mounting method of electrically connecting with the leads 69 on the upper side.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、従来の
半導体チップ等の実装方法の問題点は、上述の図5に示
すような実装構造においては、実装高さが高くなること
である。その理由は、プリント基板67上にモジュール
61、半導体チップ64および封止樹脂66が積み重な
る構造であることによる。
However, a problem with the conventional mounting method of a semiconductor chip or the like is that the mounting height is increased in the mounting structure as shown in FIG. The reason is that the module 61, the semiconductor chip 64, and the sealing resin 66 are stacked on the printed board 67.

【0005】一方、これら実装方法についての現状を見
ると、例えば携帯用電子機器は、一層の携帯性の向上が
求められ、その実装設計においては0.1mmあるいは
それ以下の単位での薄型化および小型化が要請されてい
る。
On the other hand, looking at the current state of these mounting methods, for example, portable electronic devices are required to be further improved in portability. There is a demand for miniaturization.

【0006】そこで、本発明の目的は、半導体チップ等
の部品を搭載したモジュール基板をプリント基板に実装
する際、装置全体の薄型化および小型化のための高集積
化を実現するような、半導体チップ等の実装方法を提供
することである。
Accordingly, an object of the present invention is to provide a semiconductor device which is mounted on a printed circuit board on which a module such as a semiconductor chip is mounted. An object of the present invention is to provide a mounting method of a chip or the like.

【0007】[0007]

【課題を解決するための手段】本発明の半導体チップの
実装方法は、少なくとも半導体チップを含む部品がモジ
ュール基板上に搭載され、かつこれら部品がモジュール
基板と電気的に接続されて成るモジュールをプリント基
板に実装する、半導体チップの実装方法において、モジ
ュール基板上の部品搭載位置に対応したプリント基板の
部分を該基板面に垂直にくり抜き、モジュールとプリン
ト基板とを電気的に接続し、モジュール基板とプリント
基板間の隙間を封止樹脂で充填する、ことを特徴として
いる。
According to the method of mounting a semiconductor chip of the present invention, a module including at least a component including a semiconductor chip mounted on a module substrate and being electrically connected to the module substrate is printed. In the method of mounting a semiconductor chip mounted on a board, a portion of a printed board corresponding to a component mounting position on a module board is cut out perpendicularly to the board surface, and the module and the printed board are electrically connected to each other. It is characterized in that gaps between printed boards are filled with a sealing resin.

【0008】なお、この半導体チップの実装方法は、モ
ジュール基板上に搭載された部品が、半導体チップのほ
か、抵抗、コンデンサ、ダイオード及びトランジスタで
ある、ことが望ましい。
In this method of mounting a semiconductor chip, it is desirable that the components mounted on the module substrate be a resistor, a capacitor, a diode, and a transistor in addition to the semiconductor chip.

【0009】[0009]

【発明の実施の形態】次に、本発明の実施の形態につい
て図面を参照して説明する。
Next, embodiments of the present invention will be described with reference to the drawings.

【0010】図1は、本発明の半導体チップ等の部品の
実装方法の一実施形態例を示す断面図、図2(a),
(b),(c),(d)は、本実施形態例を各工程順に
示す断面図である。
FIG. 1 is a sectional view showing an embodiment of a method for mounting a component such as a semiconductor chip according to the present invention.
(B), (c), (d) is sectional drawing which shows this embodiment example in order of each process.

【0011】図1を参照すると、本発明の実施の形態
は、モジュール基板1上に半導体チップ4および他の部
品5を搭載し、それらの部品の搭載位置に対応した部分
をくり抜いたプリント基板7と組み合せて実装する。モ
ジュール基板1の種類としては、シリコン基板、セラミ
ック基板、ガラスエポキシ樹脂などが望ましい。モジュ
ール基板1としてシリコン基板を使用することにより半
導体チップ4と同等の微細配線が形成でき、最も高集積
化された基板を実現できる。さらにシリコン基板を使用
することにより、抵抗、コンデンサ、ダイオードおよび
トランジスタなどの素子をシリコン基板内に内蔵するこ
とも可能になる。またモジュール基板1としてガラスエ
ポキシ基板を使用することにより、低価格なモジュール
を実現できる。
Referring to FIG. 1, according to an embodiment of the present invention, a printed circuit board 7 in which a semiconductor chip 4 and other components 5 are mounted on a module substrate 1 and a portion corresponding to a mounting position of those components is cut out. Implement in combination with. As a type of the module substrate 1, a silicon substrate, a ceramic substrate, a glass epoxy resin, or the like is desirable. By using a silicon substrate as the module substrate 1, fine wiring equivalent to the semiconductor chip 4 can be formed, and the most highly integrated substrate can be realized. Further, by using a silicon substrate, elements such as a resistor, a capacitor, a diode, and a transistor can be built in the silicon substrate. By using a glass epoxy substrate as the module substrate 1, a low-cost module can be realized.

【0012】以上説明した実装構造を採用することによ
り、半導体チップ4および他の部品5の厚みがプリント
基板7の厚みよりも薄ければ、実装の全体厚みは、概ね
モジュール基板1とプリント基板7の厚みの合計とな
り、半導体チップおよび他の部品の厚みは全体高さには
影響しない。
By adopting the mounting structure described above, if the thickness of the semiconductor chip 4 and the other components 5 is smaller than the thickness of the printed board 7, the total thickness of the mounting is substantially equal to the module board 1 and the printed board 7 And the thickness of the semiconductor chip and other components does not affect the overall height.

【0013】次に、図2(a)〜(d)を参照して本発
明の半導体チップの実装方法について工程順に説明す
る。
Next, a method for mounting a semiconductor chip according to the present invention will be described in the order of steps with reference to FIGS. 2 (a) to 2 (d).

【0014】先ず、図2(a)に示すように、モジュー
ル基板1上に部品を搭載するためのバンプ(A)2およ
びバンプ(B)3を形成する。このバンプ作成方法とし
ては、ワイヤーボンディング装置および金線を使用した
スタッドバンプボンディング等の方法を用いる。
First, as shown in FIG. 2A, bumps (A) 2 and bumps (B) 3 for mounting components are formed on a module substrate 1. As a method of forming the bump, a method such as a stud bump bonding using a wire bonding apparatus and a gold wire is used.

【0015】次に、図2(b)に示すように、バンプ
(A)2に銀ペースト等の導電性接着剤を塗布した後、
半導体チップ4および他の部品5を搭載しベーキングを
行い電気的に接続する。この状態においてモジュール
は、電気特性試験が可能となる。したがって、この状態
にてモジュール単体の電気特性試験を実施し不良品を除
去することができる。
Next, as shown in FIG. 2B, after applying a conductive adhesive such as a silver paste to the bump (A) 2,
The semiconductor chip 4 and other components 5 are mounted, baked, and electrically connected. In this state, the module can perform an electrical property test. Therefore, in this state, an electrical characteristic test of the module alone can be performed to remove defective products.

【0016】次に、図2(c)に示すように、プリント
基板7のくり抜き部8が半導体チップ4および他の部品
5の位置に対応するようにして、プリント基板7をバン
プ(B)3上に搭載する。そしてバンプ(B)3を介し
モジュール基板1とプリント基板7を電気的に接続す
る。半導体チップ4等の部品厚みが0.4mm程度の場
合プリント基板7の厚みを0.5mm程度とすることに
より、部品厚み0.4mmはプリント基板7よりも薄く
なり実装高さに影響しないようにすることができる。
Next, as shown in FIG. 2C, the printed board 7 is moved to the bumps (B) 3 so that the hollow portions 8 of the printed board 7 correspond to the positions of the semiconductor chip 4 and other components 5. Mount on top. Then, the module board 1 and the printed board 7 are electrically connected via the bumps (B) 3. When the thickness of the component such as the semiconductor chip 4 is about 0.4 mm, the thickness of the printed board 7 is set to about 0.5 mm so that the component thickness 0.4 mm is thinner than the printed board 7 so as not to affect the mounting height. can do.

【0017】次に、図2(d)に示すように、くり抜き
部8から封止樹脂6をモジュール基板1とプリント基板
7間に充填する。こうして半導体チップ4等を外部環境
から保護する。
Next, as shown in FIG. 2D, the sealing resin 6 is filled between the module substrate 1 and the printed substrate 7 from the hollow portion 8. Thus, the semiconductor chip 4 and the like are protected from the external environment.

【0018】このように、本発明の半導体チップの実装
方法は、モジュール基板上に半導体チップ等の部品を搭
載し、この搭載位置に対応した部分をくり抜いたプリン
ト基板と組み合せて実装するので、装置全体の薄型化、
小型化が可能となる。
As described above, according to the method of mounting a semiconductor chip of the present invention, components such as a semiconductor chip are mounted on a module substrate, and a part corresponding to the mounting position is mounted in combination with a printed circuit board. Overall thinning,
The size can be reduced.

【0019】次に、第2の実施の形態について説明す
る。
Next, a second embodiment will be described.

【0020】図3は、本発明の第2の実施形態例を示す
断面図である。図3に示すように、モジュールの基板を
シリコン基板21とすることにより配線の微細化が可能
となる。ガラスエポキシ等を使用したプリント基板27
の最小配線ピッチは50〜100μm程度であるが、シ
リコン基板21を使用することにより最小配線ピッチは
2〜3μm以下が可能となる。したがってシリコン基板
21を使用することにより配線ピッチが1/10以下と
なるので、配線の微細化が可能となり、モジュールの小
型化が可能となる。
FIG. 3 is a sectional view showing a second embodiment of the present invention. As shown in FIG. 3, by using a silicon substrate 21 as the substrate of the module, miniaturization of wiring becomes possible. Printed circuit board 27 using glass epoxy etc.
Is about 50 to 100 μm, but the use of the silicon substrate 21 allows the minimum wiring pitch to be 2 to 3 μm or less. Therefore, since the wiring pitch is reduced to 1/10 or less by using the silicon substrate 21, the wiring can be miniaturized, and the module can be downsized.

【0021】さらにモジュールの基板としてシリコン基
板21を使用すれば、シリコン基板21に抵抗、コンデ
ンサ、ダイオードおよびトランジスタなどの素子を内蔵
することも可能となる。それにより、シリコン基板21
上に後から搭載する他の部品点数を削減することが可能
となる。したがって、モジュールの小型化と接続点数の
削減が可能となるのでモジュールの信頼性を向上させる
ことができる。またバンプ(D)23を設置して置くこ
とにより、シリコン基板21に内蔵した抵抗、コンデン
サ、ダイオードおよびトランジスタなどの素子をプリン
ト基板27に直接、電気的に接続することが可能とな
る。
Further, if the silicon substrate 21 is used as the module substrate, it is possible to incorporate elements such as a resistor, a capacitor, a diode, and a transistor in the silicon substrate 21. Thereby, the silicon substrate 21
It becomes possible to reduce the number of other components to be mounted later on the top. Therefore, the module can be reduced in size and the number of connection points can be reduced, so that the reliability of the module can be improved. Further, by installing and placing the bump (D) 23, it becomes possible to directly electrically connect elements such as a resistor, a capacitor, a diode, and a transistor built in the silicon substrate 21 to the printed circuit board 27.

【0022】次に、第3の実施の形態について説明す
る。
Next, a third embodiment will be described.

【0023】図4は、本発明の第3の実施形態例を示す
断面図である。上述の図1から図3までに示した半導体
チップの搭載方法については、フリップチップによる実
装方法を説明したが、本発明は、フリップチップによる
と限定するものではない。図4に示すようにマウント剤
42にてマウントした後、ボンディングワイヤ43にて
半導体チップ44とモジュール基板41間を接続するチ
ップ オン ボード(COB)を使用しても可能であ
る。
FIG. 4 is a sectional view showing a third embodiment of the present invention. As for the mounting method of the semiconductor chip shown in FIGS. 1 to 3 described above, the mounting method using the flip chip has been described, but the present invention is not limited to the flip chip. As shown in FIG. 4, it is also possible to use a chip-on-board (COB) for connecting the semiconductor chip 44 and the module substrate 41 with the bonding wires 43 after mounting with the mounting agent 42.

【0024】[0024]

【発明の効果】以上説明したように本発明は、モジュー
ル基板上の部品搭載位置に対応したプリント基板の部分
を該基板面に垂直にくり抜き、モジュールをプリント基
板に電気的に接続し、モジュール基板とプリント基板間
の隙間を封止樹脂で充填すること等により、装置全体の
薄型化、小型化およびコストダウンを可能とした半導体
チップの実装方法を提供できる効果がある。
As described above, according to the present invention, a portion of a printed board corresponding to a component mounting position on a module board is cut out perpendicularly to the board surface, and the module is electrically connected to the printed board. By filling the gap between the semiconductor device and the printed board with a sealing resin, it is possible to provide a method of mounting a semiconductor chip that enables the overall device to be thinner, smaller, and lower in cost.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の半導体チップ等の部品の実装方法の一
実施形態例を示す断面図である。
FIG. 1 is a cross-sectional view showing one embodiment of a method for mounting a component such as a semiconductor chip of the present invention.

【図2】(a),(b),(c),(d)は、本実施形
態例を各工程順に示す断面図である。
FIGS. 2A, 2B, 2C, and 2D are cross-sectional views showing the embodiment in the order of steps.

【図3】本発明の第2の実施形態例を示す断面図であ
る。
FIG. 3 is a sectional view showing a second embodiment of the present invention.

【図4】本発明の第3の実施形態例を示す断面図であ
る。
FIG. 4 is a sectional view showing a third embodiment of the present invention.

【図5】従来の半導体チップ等の実装方法の一例を示す
断面図である。
FIG. 5 is a cross-sectional view illustrating an example of a conventional method for mounting a semiconductor chip or the like.

【符号の説明】[Explanation of symbols]

1,41,61 モジュール基板 2 バンプ(A) 3 バンプ(B) 4,24,44,64 半導体チップ 5,25,45,65 他の部品 6,26,46,66 封止樹脂 7,27,47,67 プリント基板 8 くり抜き部 21 シリコン基板 22 バンプ(C) 23 バンプ(D) 42,62 マウント剤 43,63 ボンディングワイヤ 48 バンプ(E) 68 半田 69 リード 1, 41, 61 Module substrate 2 Bump (A) 3 Bump (B) 4, 24, 44, 64 Semiconductor chip 5, 25, 45, 65 Other components 6, 26, 46, 66 Sealing resin 7, 27, 47, 67 Printed circuit board 8 Cut-out section 21 Silicon substrate 22 Bump (C) 23 Bump (D) 42, 62 Mounting agent 43, 63 Bonding wire 48 Bump (E) 68 Solder 69 Lead

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 少なくとも半導体チップを含む部品がモ
ジュール基板上に搭載され、かつこれら部品が前記モジ
ュール基板と電気的に接続されて成るモジュールをプリ
ント基板に実装する、半導体チップの実装方法におい
て、 前記モジュール基板上の前記部品搭載位置に対応した前
記プリント基板の部分を該基板面に垂直にくり抜き、 前記モジュールと前記プリント基板とを電気的に接続
し、 前記モジュール基板と前記プリント基板間の隙間を封止
樹脂で充填する、ことを特徴とする半導体チップの実装
方法。
1. A method for mounting a semiconductor chip, comprising: mounting a component including at least a semiconductor chip on a module substrate; and mounting a module formed by electrically connecting the component to the module substrate on a printed circuit board. A portion of the printed circuit board corresponding to the component mounting position on the module board is cut out perpendicularly to the board surface, and the module and the printed board are electrically connected, and a gap between the module board and the printed board is formed. A method for mounting a semiconductor chip, comprising filling with a sealing resin.
【請求項2】 前記モジュール基板上に搭載された部品
が、半導体チップのほか、抵抗、コンデンサ、ダイオー
ド及びトランジスタである、請求項1記載の半導体チッ
プの実装方法。
2. The method of mounting a semiconductor chip according to claim 1, wherein the components mounted on the module substrate are, in addition to the semiconductor chip, a resistor, a capacitor, a diode, and a transistor.
JP8109250A 1996-04-30 1996-04-30 Semiconductor chip mounting method Expired - Fee Related JP2809191B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8109250A JP2809191B2 (en) 1996-04-30 1996-04-30 Semiconductor chip mounting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8109250A JP2809191B2 (en) 1996-04-30 1996-04-30 Semiconductor chip mounting method

Publications (2)

Publication Number Publication Date
JPH09298274A JPH09298274A (en) 1997-11-18
JP2809191B2 true JP2809191B2 (en) 1998-10-08

Family

ID=14505424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8109250A Expired - Fee Related JP2809191B2 (en) 1996-04-30 1996-04-30 Semiconductor chip mounting method

Country Status (1)

Country Link
JP (1) JP2809191B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000165007A (en) 1998-11-27 2000-06-16 Nec Corp Printed circuit board, electronic component and its mounting method
US6617681B1 (en) * 1999-06-28 2003-09-09 Intel Corporation Interposer and method of making same

Also Published As

Publication number Publication date
JPH09298274A (en) 1997-11-18

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