JP2768369B2 - Evaporated film - Google Patents
Evaporated filmInfo
- Publication number
- JP2768369B2 JP2768369B2 JP2406279A JP40627990A JP2768369B2 JP 2768369 B2 JP2768369 B2 JP 2768369B2 JP 2406279 A JP2406279 A JP 2406279A JP 40627990 A JP40627990 A JP 40627990A JP 2768369 B2 JP2768369 B2 JP 2768369B2
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- Japan
- Prior art keywords
- film
- polymer
- metal
- thin film
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Laminated Bodies (AREA)
- Polyesters Or Polycarbonates (AREA)
- Physical Vapour Deposition (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は高分子基材上に金属又は
金属化合物の薄膜を連続的に積層してなる蒸着フィルム
に関し、特に、高分子基材と薄膜との密着性に優れた蒸
着フィルムに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor-deposited film formed by continuously laminating a thin film of a metal or a metal compound on a polymer substrate, and more particularly to a vapor-deposited film having excellent adhesion between the polymer substrate and the thin film. About the film.
【０００２】[0002]
【従来の技術】高分子フィルム等の基材上に連続的に各
種金属、金属化合物等の薄膜を真空蒸着法、スパッタリ
ング法、イオンプレーティング法などの方法を用いて形
成した蒸着フィルムは、機能性フィルムとして、装飾材
料をはじめ医薬品包装材料、建装材料、及び精密電子分
野等様々な分野に利用されている。中でも真空蒸着法
は、薄膜の種類が金属、金属酸化物等に限定され、選択
の自由度が低いにもかかわらず、得られる蒸着フィルム
は高速生産性に優れたものであるため、多く利用されて
いる。2. Description of the Related Art An evaporated film formed by continuously forming thin films of various metals and metal compounds on a base material such as a polymer film using a vacuum evaporation method, a sputtering method, an ion plating method, or the like, has a function. As a conductive film, it is used in various fields such as decorative materials, pharmaceutical packaging materials, building materials, and precision electronic fields. Above all, the vacuum deposition method is often used because the types of thin films are limited to metals, metal oxides, and the like, and the resulting deposited film has excellent high-speed productivity, despite the low degree of freedom in selection. ing.
【０００３】しかしながら、真空蒸着法で得られる蒸着
フィルムはスパッタリング法、イオンプレーティング法
等の他の方法で得られるものと比較して、基材である高
分子フィルムと薄膜の密着性が十分でなく、利用範囲に
限界があった。However, a vapor-deposited film obtained by a vacuum vapor-deposition method has a sufficient adhesion between a polymer film as a substrate and a thin film as compared with those obtained by other methods such as a sputtering method and an ion plating method. No, there was a limit to the range of use.
【０００４】[0004]
【発明が解決しようとする課題】このような真空蒸着法
の問題を解決するために、従来ハード及びソフトの両面
から様々な検討がなされている。例えば、ハード面で
は、単純蒸着法に各種プラズマをはじめとするアシスト
法を付加する方法などが提案され、一方、ソフト面では
高分子原料、添加剤、滑剤、安定剤等の高分子フィルム
基材形成成分の改良、あるいは、高分子フィルム上に薄
膜との密着性がより優れた高分子層を積層したり、また
は、薬品処理、溶剤処理等の化学的処理、紫外線照射、
電子線照射、放電処理等の物理的処理などのウェット法
又はドライ法による高分子フィルムの各種表面改質によ
り密着性向上検討が行なわれているが、未だ十分な密着
性は得られていないのが実状である。In order to solve such a problem of the vacuum deposition method, various studies have been made in terms of both hardware and software. For example, on the hard side, a method of adding an assist method such as various plasmas to the simple vapor deposition method has been proposed. On the other hand, on the soft side, a polymer film substrate such as a polymer raw material, an additive, a lubricant, and a stabilizer has been proposed. Improvement of forming components, or lamination of a polymer layer with better adhesion to a thin film on a polymer film, or chemical treatment, chemical treatment such as solvent treatment, ultraviolet irradiation,
Electron beam irradiation, various methods for improving the adhesion of the polymer film by a wet method or a dry method such as a physical treatment such as a discharge treatment have been studied, but sufficient adhesion has not yet been obtained. Is the actual situation.
【０００５】従って、本発明の目的は、高分子基材に金
属又は金属化合物からなる薄膜を積層してなる蒸着フィ
ルムにおいて、上記高分子基材と薄膜との密着性に優れ
た蒸着フィルムを提供することにある。Accordingly, an object of the present invention is to provide a vapor-deposited film obtained by laminating a thin film made of a metal or a metal compound on a polymer base material, which has excellent adhesion between the polymer base material and the thin film. Is to do.
【０００６】[0006]
【課題を解決するための手段】本発明者等は前記課題に
鑑みて鋭意研究の結果、本発明の上記目的は、少なくと
も一方の面が平均粗さ（Ｒa）で5.0nm以下の平滑化処理
された高分子基材の該平滑化処理された面上に、金属又
は金属化合物からなる薄膜を形成してなる蒸着フィル
ム、及び少なくとも一方の面が１０-5〜１０-2Ｔorrの
真空下で50Ｗ／ｍ2／分以上の放電処理された高分子基
材の、該放電処理された面上に金属又は金属化合物から
なる薄膜を真空蒸着してなる蒸着フィルムを提供するこ
とにより達成されることを見出した。Means for Solving the Problems The inventors of the present invention have conducted intensive studies in view of the above-mentioned problems, and as a result, the object of the present invention is to provide a smoothing treatment in which at least one surface has an average roughness (Ra) of 5.0 nm or less. A vapor-deposited film formed by forming a thin film made of a metal or a metal compound on the smoothed surface of the polymer substrate, and at least one surface under a vacuum of 10 -5 to 10 -2 Torr. Achieved by providing a vapor-deposited film obtained by vacuum-depositing a thin film made of a metal or a metal compound on a surface of a discharge-treated polymer substrate of 50 W / m 2 / min or more on the discharge-treated surface. Was found.
【０００７】以下に本発明を更に詳細に説明する。Hereinafter, the present invention will be described in more detail.
【０００８】本発明においては高分子基材の少なくとも
一方の面は平均粗さＲaの値が5.0nm以下の範囲で平滑化
処理されていることが必要であり、この平滑化処理とし
てはアルゴン、キセノン等の不活性ガス、または酸素、
窒素、二酸化炭素、一酸化炭素等の単体ガスあるいはこ
れらの混合ガスから得られる低温プラズマ空間に基材を
一定条件下で曝すことで達成できる。特に二酸化炭素／
窒素混合ガス系を用いることが有効である。In the present invention, it is necessary that at least one surface of the polymer substrate has been subjected to a smoothing treatment in a range of an average roughness Ra of 5.0 nm or less. Inert gas such as xenon, or oxygen,
This can be achieved by exposing the substrate to a low-temperature plasma space obtained from a simple gas such as nitrogen, carbon dioxide, carbon monoxide, or a mixed gas thereof under certain conditions. Especially carbon dioxide /
It is effective to use a nitrogen mixed gas system.
【０００９】プラズマを発生させる手段としては、１０
-5〜１０-2Ｔorrの真空下で、任意の電極形状を有する
放電空間に、直流、交流または高周波等のエネルギーを
印加して得られるグロー放電が利用でき、各々の最適条
件は電極形状、供給電源の種類、真空度、フィルム走行
速度などのパラメーターにより適宜決定できる。本発明
の平滑化処理は、金属又は金属化合物の薄膜を形成する
直前に真空下で連続的に行なうことが望ましいが、事前
に別工程で、例えば前述の任意のガスを用いて、１０-2
〜１０2Ｔorrの真空下で公知の手段により行なうことも
できる。印加エネルギーとしては50Ｗ／ｍ2／分以上が
好ましい。As means for generating plasma, 10
Under a vacuum of -5 to 10 -2 Torr, a glow discharge obtained by applying energy such as direct current, alternating current or high frequency to a discharge space having an arbitrary electrode shape can be used. It can be appropriately determined according to parameters such as the type of power supply, degree of vacuum, and film running speed. The smoothing treatment of the present invention is desirably continuously performed under vacuum immediately before forming a metal or metal compound thin film, but is performed in advance in a separate step, for example, by using the above-described arbitrary gas to 10 −2.
It can also be carried out by a known means under a vacuum of 〜１０10 2 Torr. The applied energy is preferably 50 W / m 2 / min or more.
【００１０】また、前記平滑化処理は、用いる高分子基
材の種類、厚み又は延伸倍率等の成膜条件、特に滑剤と
して用いられるタルク、カオリン、硫酸バリウム、アル
ミナ、二酸化ケイ素、酸化チタン、炭酸カルシウム等の
無機添加粒子の形状、粒径等に大きく影響される。すな
わちこれら添加粒子は、上記高分子化合物のフィルム化
時に、平滑性に大きく影響を与える。In the smoothing treatment, film forming conditions such as the kind of polymer base material to be used, the thickness or the draw ratio, particularly talc, kaolin, barium sulfate, alumina, silicon dioxide, titanium oxide, and carbon dioxide used as a lubricant are used. It is greatly affected by the shape, particle size, etc. of the inorganic additive particles such as calcium. That is, these additive particles greatly affect the smoothness when the polymer compound is formed into a film.
【００１１】本発明は、上記無機添加粒子を含有した高
分子樹脂を通常のキャスティング法、熱溶融法、カレン
ダー法などの公知の成膜方法で成膜し、表面状態が上記
添加粒子等による影響で粗くなったフィルムを特定の低
温プラズマで表面凸部を選択的に処理し、平均粗さ（Ｒ
a）を5.0nm以下に制御して、平滑化することでこの上に
積層される金属又は金属化合物の薄膜との密着性を向上
せしめることを特徴とするものである。本発明に於ける
平均粗さＲaは、5.0nm以下であることが必要であり、下
限は可能なかぎり小さい値の方が優れた効果が得られ
る。本発明においては、Ｒaは通常は２〜４nmで十分効
果が得られる。According to the present invention, a polymer resin containing the above-mentioned inorganic additive particles is formed by a known film forming method such as a normal casting method, a hot-melt method, or a calender method, and the surface condition is affected by the above-mentioned additional particles. The surface roughness of the film roughened by the specific process is selectively treated with a specific low-temperature plasma, and the average roughness (R
The method is characterized in that a) is controlled to 5.0 nm or less and smoothing is performed to improve adhesion to a metal or metal compound thin film laminated thereon. In the present invention, the average roughness Ra needs to be 5.0 nm or less, and the lower limit is as small as possible to obtain excellent effects. In the present invention, Ra is usually 2 to 4 nm to obtain a sufficient effect.
【００１２】本発明に於ける平滑化処理を確認する手段
としてはＲaを直接測定しても良いが、簡易的に水の接
触角で処理程度を確認することもできる。本発明ではガ
スの種類によらず接触角が45〜55度の場合に優れた効果
が得られることが確認されている。As means for confirming the smoothing process in the present invention, Ra may be directly measured, but it is also possible to simply confirm the degree of treatment by the contact angle of water. In the present invention, it has been confirmed that excellent effects can be obtained when the contact angle is 45 to 55 degrees regardless of the type of gas.
【００１３】本発明に用いる高分子基材は、蒸着膜の支
持体として用いられるものであれば特に制限はないが、
好ましくはポリエチレン、ポリプロピレン等のポリオレ
フィン；ポリエチレンテレフタレート、ポリエチレンナ
フタレートなどのポリエステル；ナイロン６、ナイロン
12などのポリアミド；ポリカーボネート；ポリスチレ
ン；ポリ塩化ビニル、ポリイミド；ポリエーテルイミ
ド；ポリフェニレンスルフィド；ポリフッ化ビニル等の
合成高分子フィルム等が用いられ、特に二軸方向に任意
に延伸されたポリエチレンテレフタレートフィルムが好
ましく用いられる。The polymer substrate used in the present invention is not particularly limited as long as it is used as a support for the deposited film.
Polyolefins such as polyethylene and polypropylene; polyesters such as polyethylene terephthalate and polyethylene naphthalate; nylon 6, nylon
Polyamide such as 12; Polycarbonate; Polystyrene; Polyvinyl chloride, Polyimide; Polyetherimide; Polyphenylene sulfide; Synthetic polymer films such as polyvinyl fluoride, etc. It is preferably used.
【００１４】上記高分子基材には公知の種々の添加剤、
安定剤、例えば、帯電防止剤、紫外線吸収剤、可塑剤、
滑剤、着色剤などを含むことができる。Various known additives are added to the polymer substrate.
Stabilizers, for example, antistatic agents, UV absorbers, plasticizers,
Lubricants, colorants and the like can be included.
【００１５】上記高分子基材の厚さは特に制限はない
が、実用的には３〜200μの範囲で、取り扱いの点から
６〜100μが好ましい。The thickness of the polymer substrate is not particularly limited, but is practically in the range of 3 to 200 μm, preferably 6 to 100 μm from the viewpoint of handling.
【００１６】本発明に於いて上記高分子基材上に薄膜を
形成する金属又は金属化合物としては、アルミニウム、
スズ、ケイ素、マグネシウム、チタン、亜鉛、銅、鉛、
インジウム、鉄、コバルト、銀などの金属及びこれらの
酸化物、窒化物、炭化物が挙げられ、特に、酸化マグネ
シウム、酸化ケイ素、酸化アルミニウム、酸化スズ等が
好ましく用いられる。In the present invention, the metal or metal compound forming a thin film on the polymer substrate is aluminum,
Tin, silicon, magnesium, titanium, zinc, copper, lead,
Examples thereof include metals such as indium, iron, cobalt, and silver, and oxides, nitrides, and carbides thereof. In particular, magnesium oxide, silicon oxide, aluminum oxide, and tin oxide are preferably used.
【００１７】本発明における金属又は金属化合物からな
る薄膜の膜厚としては、一般的には300〜3000Ａ程度の
ものが用いられ、必要により混合あるいは二層以上の積
層膜であってもよい。The thin film made of a metal or a metal compound in the present invention generally has a thickness of about 300 to 3000 A, and may be a mixed film or a laminated film of two or more layers, if necessary.
【００１８】また、薄膜は公知の真空蒸着法により、抵
抗加熱法、高周波誘導法、電子線加熱法等の公知の種々
の方法で形成可能である。The thin film can be formed by a known vacuum evaporation method by various known methods such as a resistance heating method, a high frequency induction method, and an electron beam heating method.
【００１９】以下、具体的に本発明の蒸着フィルムを得
る方法について説明する。Hereinafter, a method for obtaining the deposited film of the present invention will be specifically described.
【００２０】図１は本発明の蒸着フィルムを得るための
蒸着装置の一例を示す概略図である。図１によれば１０
-5〜１０-6Ｔorrの真空系において高分子基材１は巻出
しロール２から連続的に巻き出されダンサーロール３、
ガイドロール４、エキスパンダーロール５を通り、クー
リングドラム６に支持されながら蒸発源７から供給され
る金属又は金属化合物により薄膜がコーティングされ
る。薄膜が蒸着された基材は、同様に各種ローラー５、
４及び３を順次経由して巻取りロール10で巻取られる。FIG. 1 is a schematic view showing an example of a vapor deposition apparatus for obtaining a vapor deposition film of the present invention. According to FIG.
In a vacuum system of -5 to 10 -6 Torr, the polymer base material 1 is continuously unwound from an unwinding roll 2 and dancer rolls 3,
The thin film is coated with a metal or a metal compound supplied from the evaporation source 7 while passing through the guide roll 4 and the expander roll 5 and supported by the cooling drum 6. The base material on which the thin film has been deposited is, similarly, various rollers 5,
It is wound by a winding roll 10 via 4 and 3 in sequence.
【００２１】ここで、上記基材の搬送経路中にはフィル
ム表面を平滑化処理させるためのプラズマ空間を有する
プラズマ発生部20が設けられており、ここには内部の真
空系と差圧をつくるために金属製のボックス24が据付ら
れている。Here, a plasma generating section 20 having a plasma space for smoothing the film surface is provided in the base material transporting path, and a differential pressure between the plasma generating section 20 and the internal vacuum system is created here. For this purpose, a metal box 24 is installed.
【００２２】図２及び図３はそれぞれプラズマ発生部20
の断面図であり、図２は基材搬送方向に平行な断面図を
表わし、図３は基材搬送方向と垂直な断面図を表わす。
図２及び図３のそれぞれにおいてボックス24内部には永
久磁石22を備えた円柱状の電極21が配置されており、該
電極としては、例えばステンレス製表面にクロムメッキ
されたものを用いることができる。FIGS. 2 and 3 show the plasma generator 20 respectively.
2 is a sectional view parallel to the substrate transport direction, and FIG. 3 is a sectional view perpendicular to the substrate transport direction.
In each of FIGS. 2 and 3, a columnar electrode 21 having a permanent magnet 22 is disposed inside the box 24. As the electrode, for example, a chrome-plated stainless steel surface can be used. .
【００２３】更にボックス24内部に放電用ガスを導入す
るためのガス導入管18及びフィルム走行のためのスリッ
トが設けられている。Further, a gas introduction pipe 18 for introducing a discharge gas and a slit for running the film are provided inside the box 24.
【００２４】上記円柱状電極21は800Ｖの交流電圧が印
加される様構成されており、周囲の高真空系と遮断する
ために設けてあるボックス24はアースされている。上記
円柱状電極21とボックス24間でプラズマが発生し、この
プラズマ空間を高分子基材が連続的に走行し、表面処理
が施される構造になっている。すなわち、この例におけ
る如く、円柱状電極内に永久磁石を備えたマグネット電
極を用いることにより、電子の空間密度が上昇し、高密
度のプラズマ放電が可能になる。The cylindrical electrode 21 is configured so that an AC voltage of 800 V is applied thereto, and a box 24 provided to cut off the surrounding high vacuum system is grounded. Plasma is generated between the columnar electrode 21 and the box 24, and the polymer base material runs continuously in this plasma space, so that a surface treatment is performed. That is, as in this example, by using a magnet electrode having a permanent magnet in a columnar electrode, the spatial density of electrons is increased, and high-density plasma discharge is possible.
【００２５】上述の如く、連続的に表面平滑化処理され
たフィルムに図１に示す如く、金属又は金属化合物から
なる薄膜がコーティングされ、目的とする高密着性を有
する蒸着フィルムが得られる。As described above, a thin film made of a metal or a metal compound is coated on a film having a continuously smoothened surface as shown in FIG. 1 to obtain a desired vapor-deposited film having high adhesion.
【００２６】[0026]
実施例−１ 図１に示す装置を用い、巻出しロールに厚さ12μ、巾0.
2ｍのポリエチレンテレフタレート（ＰＥＴ）フィルム
をセットし、以下の条件で蒸着フィルムを作製した。 到達真空度 ９×10-6Ｔorr，加工真空度 ４×10-5Ｔorr 蒸着材料 酸化マグネシウム（高純度化学製，４Ｎ） 材料加熱方法 電子ビーム加熱法（６ＫＶ−50ｍＡ） 蒸発速度 25Ａ／Ｓ（水晶振動モニターでコントロール）Example 1 Using the apparatus shown in FIG.
A 2 m polyethylene terephthalate (PET) film was set, and a vapor deposition film was produced under the following conditions. Ultimate vacuum 9 × 10 -6 Torr, processing vacuum 4 × 10 -5 Torr Vapor deposition material Magnesium oxide (manufactured by High Purity Chemical Co., 4N) Material heating method Electron beam heating method (6 KV-50 mA) Evaporation rate 25 A / S (quartz) Controlled by vibration monitor)
【００２７】尚、平滑化処理は以下の放電条件で行なっ
た。 真空度 ２×10-4Ｔorr 導入ガス Ａｒ（４Ｎ） 供給電源 800Ｖ 0.5Ａ交流電源 フィルム走行速度 ５ｍ／分 電極形状 図３参照The smoothing process was performed under the following discharge conditions. Vacuum 2 × 10 -4 Torr Introduced gas Ar (4N) Supply power 800V 0.5A AC power Film running speed 5m / min Electrode shape See Fig. 3
【００２８】得られた平滑化処理された蒸着フィルムの
断面をＴＥＭで調べたところ蒸着膜は1800Ａであった。
フィルム表面の平滑性Ｒaはトンネル顕微鏡で調べたと
ころ、1.57nmであった。更にこの酸化マグネシウム蒸着
フィルムを二液硬化型ポリエステルウレタン接着剤によ
り60μの厚さの未延伸ポリプロピレン（昭和電工ショー
アロマ−ＡＴ）とドライラミネート法によりラミネート
した後、剥離試験により密着性を評価した。結果を表１
に示す。蒸着膜と基材フィルムであるＰＥＴの密着性は
十分高く、剥離によりフィルム切れが生じた。When the cross section of the obtained smoothed vapor-deposited film was examined by TEM, the vapor-deposited film was 1800 A.
The smoothness Ra of the film surface was 1.57 nm as determined by a tunnel microscope. Further, the magnesium oxide-deposited film was laminated with an unstretched polypropylene (Showa Denko Show Aroma-AT) having a thickness of 60 μm by a two-component curable polyester urethane adhesive by a dry lamination method, and the adhesion was evaluated by a peel test. Table 1 shows the results
Shown in The adhesion between the deposited film and PET as the substrate film was sufficiently high, and the film was cut by peeling.
【００２９】 実施例２〜４ 平滑化処理の放電ガスをＯ2、Ｎ2、ＣＯ2／Ｎ2の各々に
かえ、種々処理条件を表１に示すようにかえた以外は実
施例１と同様な条件で実施例２〜４をそれぞれ実施し、
同様に評価した結果を表１に示す。Examples 2 to 4 Same as Example 1 except that the discharge gas for the smoothing treatment was changed to O 2 , N 2 , and CO 2 / N 2 , and various treatment conditions were changed as shown in Table 1. Examples 2 to 4 were carried out under various conditions,
Table 1 shows the results of the evaluation.
【００３０】 実施例５〜７ 実施例４において、蒸着材料をアルミニウム、酸化アル
ミニウム、酸化スズのそれぞれにかえ、種々処理条件を
表１に示すように変更した以外は同様にして実施例５〜
７をそれぞれ行ない、同様に評価した。結果を表１に示
す。Examples 5 to 7 In the same manner as in Example 4, except that the deposition material was changed to aluminum, aluminum oxide, and tin oxide, and various processing conditions were changed as shown in Table 1.
7 was carried out and evaluated in the same manner. Table 1 shows the results.
【００３１】 比較例−１ 平滑化処理を行なわない以外は実施例５と同様な条件で
比較例１を行なった。結果を表１に示す。Comparative Example 1 Comparative Example 1 was performed under the same conditions as in Example 5 except that the smoothing process was not performed. Table 1 shows the results.
【００３２】[0032]
【表１】 [Table 1]
【００３３】表１より明らかなように平均粗さ（Ｒa）
5.0nm以下の平滑化処理を施した高分子基材上の少なく
とも一方の面に金属又は金属化合物からなる薄膜を積層
した本発明の蒸着フィルムは、従来の表面平滑性を制御
していない高分子基材上に蒸着したフィルムに比べ、フ
ィルム基材と薄膜の密着性が著しく向上した。As is clear from Table 1, the average roughness (Ra)
The deposited film of the present invention in which a thin film composed of a metal or a metal compound is laminated on at least one surface of a polymer substrate that has been subjected to a smoothing treatment of 5.0 nm or less is a conventional polymer in which surface smoothness is not controlled. The adhesion between the film substrate and the thin film was remarkably improved as compared with the film deposited on the substrate.
【００３４】[0034]
【発明の効果】以上詳細に説明したように、本発明によ
り、高分子基材に金属又は金属化合物からなる薄膜とを
積層してなる蒸着フィルムにおいて、高分子基材に薄膜
との密着性に優れた蒸着フィルムを提供することができ
る。As described in detail above, according to the present invention, in a vapor-deposited film formed by laminating a thin film composed of a metal or a metal compound on a polymer substrate, the adhesion between the polymer substrate and the thin film is improved. An excellent vapor deposition film can be provided.
【図１】本発明の蒸着フィルムを得るための蒸着装置の
一例を示す概略図である。FIG. 1 is a schematic view showing an example of a vapor deposition device for obtaining a vapor deposition film of the present invention.
【図２】プラズマ発生部の、基材搬送方向に平行な断面
図である。FIG. 2 is a cross-sectional view of a plasma generation unit, which is parallel to a substrate transport direction.
【図３】プラズマ発生部の、基材搬送方向に垂直な断面
図である。FIG. 3 is a cross-sectional view of the plasma generation unit, which is perpendicular to a substrate transport direction.
１ 高分子基材 ２ 巻出しロール ３ ダンサーロール ４ ガイドロール ５ エキスパンダーロール ６ 冷却ロール ７ 蒸発源 ８ 遮へいマスク ９ 膜厚計 10 巻取りロール 16 排気システム 17 排気システム 18 ガス導入管 20 プラズマ発生部 21 電極 22 永久磁石 23 供給電源 24 ボックス DESCRIPTION OF SYMBOLS 1 Polymer base material 2 Unwinding roll 3 Dancer roll 4 Guide roll 5 Expander roll 6 Cooling roll 7 Evaporation source 8 Shielding mask 9 Film thickness gauge 10 Winding roll 16 Exhaust system 17 Exhaust system 18 Gas introduction pipe 20 Plasma generation part 21 Electrode 22 Permanent magnet 23 Power supply 24 Box
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭64−8264（ＪＰ，Ａ) 特開 昭64−31958（ＪＰ，Ａ) 特開 平１−180967（ＪＰ，Ａ) 特開 昭62−156941（ＪＰ，Ａ) 特開 昭62−116763（ＪＰ，Ａ) 特開 昭63−242534（ＪＰ，Ａ) 特開 平２−293135（ＪＰ，Ａ) 特公 昭61−3871（ＪＰ，Ｂ２) 特公 昭57−29266（ＪＰ，Ｂ２) 特公 平１−43921（ＪＰ，Ｂ２) ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-64-8264 (JP, A) JP-A-64-31958 (JP, A) JP-A-1-180967 (JP, A) JP-A-62 156941 (JP, A) JP-A-62-116763 (JP, A) JP-A-63-242534 (JP, A) JP-A-2-293135 (JP, A) JP-B-61-3871 (JP, B2) Japanese Patent Publication No. 57-29266 (JP, B2) Japanese Patent Publication No. 1-49211, JP (B2)
Claims (1)
で５．０ｎｍ以下の、１０-5〜１０-2Ｔｏｒｒの真空下
で５０Ｗ／ｍ２／分以上の放電処理により平滑化処理さ
れた高分子基材の該平滑化処理された面上に、金属又は
金属化合物からなる薄膜を形成してな蒸着フィルム。At least one surface has an average roughness (Ra)
Under a vacuum of 10 -5 to 10 -2 Torr at 5.0 nm or less
A vapor-deposited film formed by forming a thin film composed of a metal or a metal compound on the smoothed surface of a polymer substrate smoothed by a discharge treatment of 50 W / m 2 / min or more .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2406279A JP2768369B2 (en) | 1990-12-06 | 1990-12-06 | Evaporated film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2406279A JP2768369B2 (en) | 1990-12-06 | 1990-12-06 | Evaporated film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04212842A JPH04212842A (en) | 1992-08-04 |
| JP2768369B2 true JP2768369B2 (en) | 1998-06-25 |
Family
ID=18515894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2406279A Expired - Lifetime JP2768369B2 (en) | 1990-12-06 | 1990-12-06 | Evaporated film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2768369B2 (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4426754A1 (en) * | 1994-07-28 | 1996-02-01 | Wolff Walsrode Ag | Process for plasma pretreatment of polyolefin films |
| JP2000273226A (en) * | 1999-03-24 | 2000-10-03 | Matsushita Electric Works Ltd | Formation of metal film on resin substrate surface |
| JP4430165B2 (en) * | 1999-09-02 | 2010-03-10 | 日東電工株式会社 | Vacuum thin film forming apparatus and vacuum thin film forming method |
| JP4569982B2 (en) * | 1999-11-15 | 2010-10-27 | 大日本印刷株式会社 | Laminated packaging for boil or retort processing |
| JP2007270066A (en) * | 2006-03-31 | 2007-10-18 | Fujifilm Corp | Method of base preparation for polyester film and polyester film product manufactured using the same |
| JP2008049576A (en) * | 2006-08-24 | 2008-03-06 | Toppan Printing Co Ltd | Gas barrier laminate |
| JP5354246B2 (en) * | 2007-09-05 | 2013-11-27 | アイシン精機株式会社 | Manufacturing method of decorative resin products |
| JP2008062651A (en) * | 2007-10-02 | 2008-03-21 | Dainippon Printing Co Ltd | Method for producing transparent barrier film |
| JP5223325B2 (en) * | 2007-12-21 | 2013-06-26 | 住友金属鉱山株式会社 | Metal-coated polyethylene naphthalate substrate and manufacturing method thereof |
| JP5570170B2 (en) * | 2009-09-29 | 2014-08-13 | 富士フイルム株式会社 | Gas barrier unit, back sheet for solar cell module, and solar cell module |
| JP5919896B2 (en) * | 2011-12-28 | 2016-05-18 | 住友ベークライト株式会社 | Cured film processing method and semiconductor device manufacturing method |
| JP2017014618A (en) * | 2016-06-01 | 2017-01-19 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Method for treating flexible substrate |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5810060B2 (en) * | 1980-07-30 | 1983-02-24 | 有限会社 大島明日葉研究所 | Processed food manufacturing method using artificially cultivated Ashitaba as raw material |
| JPS613871A (en) * | 1984-06-16 | 1986-01-09 | Kawasaki Steel Corp | Very high tension cast steel having high toughness at very low temperature and its manufacture |
| JPS62116763A (en) * | 1985-11-13 | 1987-05-28 | Toppan Printing Co Ltd | Production of thermally shrinkable plastic film having vapor-deposited layer |
| JPS62156941A (en) * | 1985-12-28 | 1987-07-11 | 東洋紡績株式会社 | Double-layer gas-barriering film or sheet and manufacture thereof |
| JPS63242534A (en) * | 1987-03-30 | 1988-10-07 | 凸版印刷株式会社 | Packaging material with metal evaporated layer |
| JPS648264A (en) * | 1987-06-29 | 1989-01-12 | Furukawa Electric Co Ltd | Production of metal-coated plastic film |
| JPS6431958A (en) * | 1987-07-28 | 1989-02-02 | Furukawa Electric Co Ltd | Method for allowing thin metallic film to adhere to plastic film |
| JPS6443921A (en) * | 1987-08-12 | 1989-02-16 | Hitachi Ltd | Manufacture of oxide superconductive material |
| JPH01180967A (en) * | 1988-01-13 | 1989-07-18 | Hitachi Cable Ltd | Formation of metallic film to plastic surface |
| JPH02293135A (en) * | 1989-05-09 | 1990-12-04 | Toray Ind Inc | Method and apparatus for preparing metal film laminated film |
-
1990
- 1990-12-06 JP JP2406279A patent/JP2768369B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04212842A (en) | 1992-08-04 |
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