JP2742572B2 - Vertical heat treatment equipment for semiconductor wafers - Google Patents
Vertical heat treatment equipment for semiconductor wafersInfo
- Publication number
- JP2742572B2 JP2742572B2 JP27453887A JP27453887A JP2742572B2 JP 2742572 B2 JP2742572 B2 JP 2742572B2 JP 27453887 A JP27453887 A JP 27453887A JP 27453887 A JP27453887 A JP 27453887A JP 2742572 B2 JP2742572 B2 JP 2742572B2
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- work table
- semiconductor wafers
- transfer
- transfer device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体ウェーハの熱拡散、アニール、低圧
CVD処理等に用いられる半導体ウェーハの縦型熱処理装
置に関する。
〔従来の技術〕
半導体ウェーハの縦型熱処理装置には、押上げ式と吊
下げ式とがあり、従来、前者は、半導体ウェーハが水平
かつ多段に載置されるウェーハボートを昇降するエレベ
ータを備えた架台の上方に、下方に開口した垂直円筒状
の１個の熱処理炉を設けてなり、又、後者は、同様のウ
ェーハボートを昇降するエレベータを備えた架台の側方
に、上方に開口した垂直円筒状の１個の熱処理炉を設け
てなる。
そして、いずれの縦型熱処理装置30も、第４図に示す
ように、クリーンルーム31とマシーンルーム32を区画す
る壁33に貫設され、かつマシンルーム側に熱処理炉34を
１個ずつ搭載して構成され、それぞれの熱処理炉34にウ
ェーハボートを介して押し上げられ、又は吊り下げられ
た半導体ウェーハ（共に図示せず）に熱拡散、アニー
ル、低圧CVD処理等を施すものである。
〔発明が解決しようとする問題点〕
しかしながら、上記従来の縦型熱処理装置によれば、
１台の装置に１個の熱処理炉しかないため、設置台数が
装置の幅で限定され、単位面積当たりの維持費が非常に
高価であり、装置の小スペース化が非常に重要視されて
いるクリーンルームの壁面を有効に活用できない問題が
ある。
そこで、本発明は、クリーンルームの壁面を有効に活
用し得るようにした半導体ウェーハの縦型熱処理装置を
提供しようとするものである。
〔問題点を解決するため手段〕
前記問題点を解決するため、本発明は、カセットキャ
リヤとウェーハボート相互間で半導体ウェーハを移載す
る移載装置を設けた１つの作業台と、作業台の後方に設
けられた搬送空間と、搬送空間の上方又は下方に作業台
側を底辺とし二等辺三角形を形成するように配置された
３つの熱処理炉と、ウェーハボートを作業台と搬送空間
の間で水平に搬送する搬送装置と、搬送装置と熱処理炉
の間でウェーハボートを装入・取外しするエレベータと
を備えたものである。
〔作用〕
上記手段によれば、クリーンルームの壁面を占める熱
処理炉１個当りの幅は、１台の装置の幅の1/3以下とな
る。
〔実施例〕
以下、本発明の一実施例を第１図〜第３図と共に説明
する。
図中１はクリーンルーム２とマシーンルーム３とを区
画する壁４に貫設した押上げ式縦型熱処理装置の機枠
で、そのクリーンルーム２内に突出した部分には、作業
台５が設けられている。作業台５上には、半導体ウェー
ハ６が水平かつ多段に載置されるカセットキャリヤ７と
ウェーハボート８相互間で半導体ウェーハ６を移載する
１対の移載装置9a,9bが設けられている。
一方、機枠１における作業台５の後方マシーンルーム
側）には、半導体ウェーハ６を載置したウェーハボード
８を水平に搬送する搬送空間10が設けられている。搬送
空間10は、マシーンルーム３と気密に区画され、その上
方には、所要の点を中心とする円周上に、前方（クリー
ンルーム側）を底辺とする二等辺三角形状に配置され、
かつ下方へ開口した垂直円筒状の３個の熱処理炉11設け
られている。各熱処理炉11は、第２図に詳記するよう
に、耐火物から形成され、下方に開口した垂直円筒状の
ヒートチューブ12と、ヒートチューブ12の内周面に配置
された円筒状のコイルヒーター13と、コイルヒーター13
内に配置され、かつ下方へ開口した垂直円筒状の石英プ
ロセス管14とからなる。
各熱処理炉11は、トランス、電源、温度制御用サイリ
スタ等（図示せず）を備えた制御盤15によってFe−Crコ
イルヒーター13の制御等が行われ、かつ必要に応じてガ
ス供給ユニット16から石英プロセス管14の内部に反応ガ
ス等が供給される。又、各熱処理炉11は、マシーンルー
ム３に面して機枠１に設けたそれぞれの点検トビラ17を
介してヒートチューブ12を石英プロセス管14等と共に取
り出してその点検や補修等が行われる。
前記作業台５上及び搬送空間10には、ウェーハボート
８を作業台５と熱処理炉11の下方の搬送空間10の間で水
平に搬送する搬送装置が設けられている。搬送装置は、
作業台５上の所要の点O1を垂直軸として旋回し、作業台
５上のウェーハボート８を搬送空間10方向へ水平に搬送
する第１搬送機（図示せず）と、熱処理炉11の配置中心
O2を中心として旋回し、第１搬送機によって搬送された
ウェーハボート８をそれぞれの熱処理炉11の下方に水平
に搬送する第２搬送機18とからなる。そして、各熱処理
炉11の下方の機枠１には、ウェーハボート８をそれぞれ
の熱処理炉11に装入・取外しするエレベータ（図示せ
ず）が昇降可能に設けられている。
第１図、第３図において19は作業台５上に設けた押釦
ボックスで、作業台５の側方に並設される計装盤（図示
せず）を見ながら移載装置される9a,9b、熱処理炉11等
を操作するものである。又、第２図において20及び21は
作業台５の上方及び搬送空間10の後方に設けたクリーン
ユニットである。
上記構成の縦型熱処理装置において、作業台５上のカ
セットキャリヤ７内の半導体ウェーハ６は、一方の移載
装置9aの作動によってウェーハボート８に移載され、ウ
ェーハボート８は、搬送装置の第１搬送機及び第２搬送
機18の作動によって所要の熱処理炉11の下方に搬送さ
れ、しかる後エレベータの作動によって熱処理炉11内に
装入される。
熱処理炉11内で適宜の処理が施された半導体ウェーハ
６は、エレベータの作動によってウェーハボート８と共
に熱処理炉11から取外され、以下上述した手順の逆の手
順で作業台５上のカセットキャリヤ７内に載置される。
又、熱処理炉11を点検、補修する場合には、それぞれ
の点検トビラ17を開き、ヒートチューブ12をコイルヒー
ター13及び石英プロセス管14と共に取り出して行う。
なお、上記実施例においては、熱処理炉11を押上げ式
とする場合について述べたが、これに限らず吊下げ式と
してもよい。
〔発明の効果〕
以上のように本発明によれば、クリーンルームの壁面
を占める熱処理炉１個当りの幅が、１台の装置の幅のと
1/3以下となるので、従来に比しクリーンルームの壁面
を格別有効に活用することができ、又、移載装置と搬送
装置を特定の位置に配置することにより、作業台と熱処
理炉との間の距離を最短にし得、作業性の改善と省スペ
ース化を実現することができる。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to thermal diffusion, annealing, and low pressure of a semiconductor wafer.
The present invention relates to a vertical heat treatment apparatus for semiconductor wafers used for CVD processing and the like. [Prior art] The vertical heat treatment apparatus for semiconductor wafers has a lifting type and a hanging type. Conventionally, the former is provided with an elevator for raising and lowering a wafer boat on which semiconductor wafers are placed horizontally and in multiple stages. A vertical cylindrical heat treatment furnace opened downward is provided above the gantry, and the latter is opened upward on the side of a gantry equipped with an elevator for moving up and down a similar wafer boat. It is provided with one vertical cylindrical heat treatment furnace. As shown in FIG. 4, each of the vertical heat treatment apparatuses 30 is provided through a wall 33 that divides a clean room 31 and a machine room 32, and one heat treatment furnace 34 is mounted on the machine room side. The semiconductor wafers (both not shown) pushed up or suspended in the respective heat treatment furnaces 34 via a wafer boat are subjected to thermal diffusion, annealing, low-pressure CVD processing and the like. [Problems to be solved by the invention] However, according to the conventional vertical heat treatment apparatus,
Since there is only one heat treatment furnace in one device, the number of installations is limited by the width of the device, the maintenance cost per unit area is very expensive, and reduction in space of the device is very important. There is a problem that the wall of the clean room cannot be used effectively. Accordingly, an object of the present invention is to provide a semiconductor wafer vertical heat treatment apparatus capable of effectively utilizing the wall surface of a clean room. [Means for Solving the Problems] In order to solve the above problems, the present invention provides a work table provided with a transfer device for transferring semiconductor wafers between a cassette carrier and a wafer boat; A transfer space provided at the rear, three heat treatment furnaces arranged above or below the transfer space so as to form an isosceles triangle with the work table side as the bottom, and a wafer boat between the work table and the transfer space. It comprises a transfer device for transferring horizontally, and an elevator for loading and unloading a wafer boat between the transfer device and the heat treatment furnace. [Operation] According to the above means, the width of one heat treatment furnace occupying the wall surface of the clean room is 1/3 or less of the width of one apparatus. Embodiment One embodiment of the present invention will be described below with reference to FIGS. In the figure, reference numeral 1 denotes a machine frame of a push-up type vertical heat treatment apparatus penetrating a wall 4 that partitions a clean room 2 and a machine room 3, and a work table 5 is provided at a portion protruding into the clean room 2. I have. On the worktable 5, a pair of transfer devices 9a and 9b for transferring the semiconductor wafers 6 between the cassette carrier 7 on which the semiconductor wafers 6 are mounted horizontally and in multiple stages and the wafer boat 8 are provided. . On the other hand, a transfer space 10 for horizontally transferring a wafer board 8 on which a semiconductor wafer 6 is mounted is provided in the machine frame 1 on the rear side of the work table 5 in the machine room. The transfer space 10 is airtightly partitioned from the machine room 3, and is disposed above it in a shape of an isosceles triangle with the front (clean room side) as the base on a circumference centered on a required point,
Also, three vertically cylindrical heat treatment furnaces 11 which are opened downward are provided. As shown in detail in FIG. 2, each heat treatment furnace 11 includes a vertical cylindrical heat tube 12 formed of a refractory material and opening downward, and a cylindrical coil disposed on the inner peripheral surface of the heat tube 12. Heater 13 and coil heater 13
And a vertically cylindrical quartz process tube 14 opened downward. Each of the heat treatment furnaces 11 controls a Fe-Cr coil heater 13 by a control panel 15 having a transformer, a power supply, a thyristor for controlling temperature, etc. (not shown). A reaction gas or the like is supplied into the quartz process tube 14. Further, in each heat treatment furnace 11, the heat tube 12 is taken out together with the quartz process tube 14 and the like through the inspection doors 17 provided in the machine frame 1 facing the machine room 3, and inspection and repair thereof are performed. A transfer device for horizontally transferring the wafer boat 8 between the work table 5 and the transfer space 10 below the heat treatment furnace 11 is provided on the work table 5 and the transfer space 10. The transport device is
A first transfer device (not shown) for turning the wafer boat 8 on the work table 5 horizontally in the direction of the transfer space 10 while turning around a required point O 1 on the work table 5 as a vertical axis; Placement center
It comprises a second transfer device 18 which turns around O 2 and transfers the wafer boat 8 transferred by the first transfer device horizontally below the respective heat treatment furnaces 11. An elevator (not shown) for loading and removing the wafer boat 8 into and from each of the heat treatment furnaces 11 is provided in the machine frame 1 below each of the heat treatment furnaces 11 so as to be able to move up and down. In FIGS. 1 and 3, reference numeral 19 denotes a push button box provided on the work table 5, which is a transfer box 9a, which is transferred while viewing an instrument panel (not shown) juxtaposed beside the work table 5. 9b, for operating the heat treatment furnace 11 and the like. In FIG. 2, reference numerals 20 and 21 denote clean units provided above the work table 5 and behind the transfer space 10. In the vertical heat treatment apparatus having the above-described configuration, the semiconductor wafer 6 in the cassette carrier 7 on the work table 5 is transferred to the wafer boat 8 by the operation of one transfer device 9a, and the wafer boat 8 is moved to the second position of the transfer device. The wafer is conveyed below the required heat treatment furnace 11 by the operation of the first carrier and the second carrier 18, and is then charged into the heat treatment furnace 11 by the operation of the elevator. The semiconductor wafer 6 which has been appropriately treated in the heat treatment furnace 11 is removed from the heat treatment furnace 11 together with the wafer boat 8 by the operation of the elevator, and the cassette carrier 7 on the work table 5 is reversed in the above-described procedure. Is placed inside. When inspecting and repairing the heat treatment furnace 11, each inspection door 17 is opened, and the heat tube 12 is taken out together with the coil heater 13 and the quartz process tube 14. In the above-described embodiment, the case where the heat treatment furnace 11 is of the push-up type has been described. [Effects of the Invention] As described above, according to the present invention, the width of one heat treatment furnace occupying the wall surface of the clean room is equal to the width of one apparatus.
Because it is 1/3 or less, the wall of the clean room can be used more effectively than before, and by placing the transfer device and transfer device at specific positions, the work table and heat treatment furnace The distance between them can be minimized, and workability can be improved and space can be saved.
【図面の簡単な説明】
第１図〜第３図は本発明の一実施例を示すもので、第１
図は押上げ式縦型熱処理装置の平面図、第２図は第１図
におけるII−II線断面図、第３図は押上げ式縦型熱処理
装置の正面図であり、第４図は従来の縦型熱処理装置を
設置した時の概略平面図である。
５…作業台、６…半導体ウェーハ
７…カセットキャリヤ
８…ウェーハボート
9a,9b…移載装置
10…搬送空間、11…熱処理炉
12…ヒートチューブ
13…コイルヒーター
14…石英プロセス管
18…第２搬送機BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1 to 3 show one embodiment of the present invention.
FIG. 2 is a plan view of a push-up type vertical heat treatment apparatus, FIG. 2 is a sectional view taken along line II-II in FIG. 1, FIG. 3 is a front view of the push-up type vertical heat treatment apparatus, and FIG. FIG. 5 is a schematic plan view when the vertical heat treatment apparatus is installed. 5 Work table, 6 Semiconductor wafer 7 Cassette carrier 8 Wafer boat 9a, 9b Transfer device 10, Transfer space, 11 Heat treatment furnace 12, Heat tube 13, Coil heater 14, Quartz process tube 18, Second Carrier machine
Claims (1)
ウェーハを移載する移載装置を設けた１つの作業台と、
作業台の後方に設けられた搬送空間と、搬送空間の上方
又は下方に作業台側を底辺とし二等辺三角形を形成する
ように配置された３つの熱処理炉と、ウェーハボートを
作業台と搬送空間の間で水平に搬送する搬送装置と、搬
送装置と熱処理炉の間でウェーハボートを装入・取外し
するエレベータとを備えた半導体ウェーハの縦型熱処理
装置。(57) [Claims] One work table provided with a transfer device for transferring semiconductor wafers between the cassette carrier and the wafer boat;
A transfer space provided behind the work table, three heat treatment furnaces arranged above or below the transfer space so as to form an isosceles triangle with the work table side as a bottom, and a work table and a transfer space A vertical type heat treatment apparatus for semiconductor wafers, comprising: a transfer device that transfers the wafer horizontally between the transfer devices; and an elevator that inserts and removes the wafer boat between the transfer device and the heat treatment furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27453887A JP2742572B2 (en) | 1987-10-29 | 1987-10-29 | Vertical heat treatment equipment for semiconductor wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27453887A JP2742572B2 (en) | 1987-10-29 | 1987-10-29 | Vertical heat treatment equipment for semiconductor wafers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01117022A JPH01117022A (en) | 1989-05-09 |
| JP2742572B2 true JP2742572B2 (en) | 1998-04-22 |
Family
ID=17543104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27453887A Expired - Fee Related JP2742572B2 (en) | 1987-10-29 | 1987-10-29 | Vertical heat treatment equipment for semiconductor wafers |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2742572B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0715729B2 (en) * | 1987-10-02 | 1995-02-22 | キヤノン株式会社 | Data playback device |
| JPH0666377B2 (en) * | 1990-03-30 | 1994-08-24 | 東京エレクトロン株式会社 | Processing apparatus, processing method, and resist processing apparatus |
| JPH0574726A (en) * | 1991-09-12 | 1993-03-26 | Nec Corp | Vertical type heat treatment equipment |
| JPH05217928A (en) * | 1991-11-29 | 1993-08-27 | Nec Corp | Vertical-type heat treating apparatus |
| KR100203782B1 (en) * | 1996-09-05 | 1999-06-15 | 윤종용 | Heat treatment apparatus for semiconductor wafer |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57149748A (en) * | 1981-03-12 | 1982-09-16 | Anelva Corp | Treating device for substrate |
| JPS62130534A (en) * | 1985-12-02 | 1987-06-12 | Deisuko Saiyaa Japan:Kk | Wafer conveyor for vertical wafer processor |
| JPH0732142B2 (en) * | 1986-02-14 | 1995-04-10 | 株式会社ディスコ | External air contamination prevention device for vertical semiconductor heat treatment equipment |
-
1987
- 1987-10-29 JP JP27453887A patent/JP2742572B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01117022A (en) | 1989-05-09 |
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