JPH02187015A - Heating device - Google Patents
Heating deviceInfo
- Publication number
- JPH02187015A JPH02187015A JP648189A JP648189A JPH02187015A JP H02187015 A JPH02187015 A JP H02187015A JP 648189 A JP648189 A JP 648189A JP 648189 A JP648189 A JP 648189A JP H02187015 A JPH02187015 A JP H02187015A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- clean air
- heating
- plate heater
- heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 42
- 238000001816 cooling Methods 0.000 claims abstract description 7
- 239000011261 inert gas Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 36
- 239000004065 semiconductor Substances 0.000 abstract description 28
- 238000009413 insulation Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000009423 ventilation Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明は加熱装置に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a heating device.
(従来の技術)
加熱装置、たとえば半導体製造における加熱処理工程に
おいて用いられる加熱装置では、次のようなものがある
。(Prior Art) There are the following heating devices, for example, heating devices used in a heat treatment process in semiconductor manufacturing.
すなわち、半導体基板を載置するプレートヒータを有す
る下部ハウジングを、上部ハウジングに当接させて処理
室を構成し、上記半導体基板を加熱処理するものである
。That is, a lower housing having a plate heater on which a semiconductor substrate is placed is brought into contact with an upper housing to form a processing chamber, and the semiconductor substrate is heat-treated.
(発明が解決しようとする課題)
しかしながら、上記のような加熱装置では、プレートヒ
ータの温度はそのままで、半導体U板がプレートヒータ
上にあるため輻射熱により半導体基板が加熱条件のまま
となり、オーバーベーク(所定時間以上の加熱)となる
。そのため、半導体基板がオーバーベークされないよう
に、加熱処理後は半導体基板を早急に加熱装置から搬出
しなければならなかった。(Problem to be Solved by the Invention) However, in the heating device as described above, the temperature of the plate heater remains the same, and since the semiconductor U board is placed on the plate heater, the semiconductor substrate remains under the heating condition due to radiant heat, resulting in overbaking. (heating for a predetermined time or more). Therefore, after the heat treatment, the semiconductor substrate had to be immediately removed from the heating apparatus to prevent the semiconductor substrate from being overbaked.
また、プレートヒータの熱により周囲の下部ハウジング
まで高温になってしまうので、他の同様な加熱処理室を
並置すると、相互の加熱処理室間の熱伝導の影響で、適
切な温度で加熱処理できないなどの問題があった。In addition, the heat from the plate heater raises the temperature to the surrounding lower housing, so if other similar heat treatment chambers are placed side by side, heat conduction between the two heat treatment chambers will prevent heat treatment at an appropriate temperature. There were other problems.
本発明はこのような問題を解決すべくなされたもので、
その目的とするところは、加熱処理後に加熱装置内に半
導体基板などの非処理体を残留させても被処理体がオー
バーベークされることはなく、また、複数の処理室を並
置して同時に複数の被処理体を加熱処理することが可能
な加熱装置を提供することにある。The present invention was made to solve such problems,
The purpose of this is to prevent overbaking of objects to be processed even if unprocessed objects, such as semiconductor substrates, remain in the heating device after heat treatment, and to avoid overbaking of objects to be processed, such as semiconductor substrates, by placing multiple processing chambers side by side. An object of the present invention is to provide a heating device capable of heat-treating an object to be treated.
[発明の構成]
(課題を解決するための手段)
前記目的を達成するために本発明は、被処理体を排気口
への不活性ガス流通状態で加熱するプレートヒータと、
このプレートヒータによる予め定められた加熱期間終了
後上記プレートヒータおよび上記被処理体を相対的に移
動させて離間させてこの被処理体を保持する保持手段と
、この保持手段による被処理体保持状態でクリーンエア
を流通させ被処理体を冷却する冷却手段とを具備してな
ることを特徴とする。[Structure of the Invention] (Means for Solving the Problems) In order to achieve the above object, the present invention provides a plate heater that heats an object to be processed while an inert gas is flowing to an exhaust port;
A holding means for holding the object to be processed by moving the plate heater and the object to be processed relative to each other after a predetermined heating period by the plate heater, and a state in which the object to be processed is held by the holding means. The apparatus is characterized by comprising a cooling means for circulating clean air to cool the object to be processed.
(作 用)
本発明では、加熱処理中は、プレートヒータによって被
処理体は排気口への不活性ガス流通状態で加熱処理され
る。予め定められた加熱期間終了後保持手段によって、
上記プレートヒータおよび上記被処理体は相対的に移動
されて離間されてこの被処理体は保持される。そして、
この保持された状態で冷却手段によってクリーンエアが
流通されて被処理体は冷却されるので、プレートヒータ
の輻射熱によって被処理体がオーバーベークされること
はない。(Function) In the present invention, during the heat treatment, the object to be treated is heated by the plate heater in a state where an inert gas is flowing to the exhaust port. After the predetermined heating period, the holding means
The plate heater and the object to be processed are relatively moved and separated, and the object to be processed is held. and,
Since the object to be processed is cooled by circulating clean air by the cooling means in this held state, the object to be processed is not overbaked by the radiant heat of the plate heater.
(実施例)
以下図面に基づいて本発明装置を半導体ウェハなどの基
板のベーキング処理を行なうベーキング装置に適用した
一実施例を詳細に説明する。(Embodiment) An embodiment in which the apparatus of the present invention is applied to a baking apparatus for baking substrates such as semiconductor wafers will be described in detail below with reference to the drawings.
このベーキング装置は次のように構成される。This baking device is constructed as follows.
図示しない昇降装置に、表面が例えば硬質アルマイト処
理されたプレートヒータ1が水平に連結され、プレート
ヒータ1の上面周辺部には断熱部材2が設けられる。プ
レートヒータ1の下方で、装置本体に設けられた底板3
には、保持手段たとえば、プレートヒータ1を鉛直方向
に貫通可能な3本1組の載置ビン5が支持面が形成され
る如く立設される。底板3の周囲には、排気量調節用の
ダンパー(図示せず)を有し、排気装置6に連結された
角パイプ状の排気ダクト7が設けられる。A plate heater 1 whose surface is treated with hard alumite, for example, is horizontally connected to a lifting device (not shown), and a heat insulating member 2 is provided around the upper surface of the plate heater 1. A bottom plate 3 provided on the device body below the plate heater 1
A holding means, for example, a set of three mounting bins 5 that can penetrate the plate heater 1 in the vertical direction is erected so as to form a supporting surface. A rectangular pipe-shaped exhaust duct 7 is provided around the bottom plate 3 and is connected to an exhaust device 6 and has a damper (not shown) for adjusting the displacement.
排気ダクト7の内側面には下部通気口9が設けられる。A lower ventilation port 9 is provided on the inner surface of the exhaust duct 7.
排気ダクト7上面の、後述するウェハ出入口とは反対側
には、通気口11が設けられ、さらにその上部に、通気
口11への気体の流入を促進する整流ガイド板12が設
けられる。A vent 11 is provided on the upper surface of the exhaust duct 7 on the side opposite to a wafer entrance/exit, which will be described later, and a rectifying guide plate 12 for promoting gas flow into the vent 11 is provided above the vent 11 .
上記断熱部材2には、排気ダクト7の内側面に鉛直方向
に摺動可能であって、上記下部通気口9を遮蔽可能なシ
ャッタ一部材13が連結される。A shutter member 13 is connected to the heat insulating member 2 so as to be vertically slidable on the inner surface of the exhaust duct 7 and capable of shielding the lower vent 9 .
シャッタ一部材13の上面には通気口15が設けられる
。A vent hole 15 is provided on the upper surface of the shutter member 13.
プレートヒータ1の上方には、下面に通気口17を有す
る断熱カバー19が装置本体(図示せず)に固設される
。断熱カバー19は排気装置21に連結される。断熱カ
バー19の下面には、通気口17に重なる通気口23を
有し、断熱部材2と当接可能なシリンダ状の断熱室25
が、プレートヒータ1に対向されて設けられる。Above the plate heater 1, a heat insulating cover 19 having a ventilation hole 17 on the lower surface is fixedly installed on the main body of the apparatus (not shown). The heat insulating cover 19 is connected to an exhaust device 21 . The lower surface of the heat insulating cover 19 has a cylindrical heat insulating chamber 25 which has a vent 23 overlapping the vent 17 and can come into contact with the heat insulating member 2.
is provided facing the plate heater 1.
これら断熱カバー19および断熱室25は、装置本体(
図示せず)に固設された筐体状のカバー27によって、
カバー27の下面に断熱室25が嵌合される状態で包囲
される。カバー27の上面には通気口29が設けられる
。カバー27の下面はシャッタ一部材13の上面に当接
可能で、通気口15に重なる通気口31を有する。カバ
ー27の下面とシャッタ一部材13の上面とが隔離され
ると、所定方向(図中左側)に半導体基板を搬入搬出す
る基板出入口33が形成される。上記通気口29と上記
基板出入口33には、冷却手段例えばクリーンエア供給
装置35がら供給されるクリーンエアが選択的に流入可
能である。The heat insulating cover 19 and the heat insulating chamber 25 are connected to the main body of the device (
(not shown) by a housing-like cover 27 fixed to the
The heat insulating chamber 25 is fitted and surrounded by the lower surface of the cover 27 . A vent hole 29 is provided on the top surface of the cover 27. The lower surface of the cover 27 can come into contact with the upper surface of the shutter member 13 and has a vent 31 that overlaps the vent 15. When the lower surface of the cover 27 and the upper surface of the shutter member 13 are separated, a substrate entrance/exit 33 is formed for loading and unloading semiconductor substrates in a predetermined direction (left side in the figure). Clean air supplied from a cooling means, for example, a clean air supply device 35, can selectively flow into the vent hole 29 and the substrate inlet/outlet port 33.
次にこの加熱装置の動作について説明する。Next, the operation of this heating device will be explained.
まず、搬送ロボット(図示せず)によって半導体基板5
1が、基板出入口33を通って載置ピン5上に搬入され
る(第1図)。続いて、昇降装置(図示せず)によって
プレートヒータ1が上昇され、半導体基板51はプレー
トヒータ1上に載置1’F’TIL懸る(第2図)。な
お、上記半導体基板51を必要に応じてヒータ51面か
られずかに離間することにより半導体基板51へのゴミ
の付着を回避できる。これと同時に断熱部材2が、断熱
室25の下端面に当接され、処理室が構成される。なお
、プレートヒータ1は、あらかじめ図示しない加熱制御
装置によって所定温度たとえば200℃に保たれている
。First, the semiconductor substrate 5 is transferred by a transfer robot (not shown).
1 is carried onto the mounting pin 5 through the substrate entrance/exit 33 (FIG. 1). Subsequently, the plate heater 1 is raised by a lifting device (not shown), and the semiconductor substrate 51 is placed 1'F'TIL on the plate heater 1 (FIG. 2). Note that adhesion of dust to the semiconductor substrate 51 can be avoided by slightly separating the semiconductor substrate 51 from the surface of the heater 51 as necessary. At the same time, the heat insulating member 2 is brought into contact with the lower end surface of the heat insulating chamber 25, thereby forming a processing chamber. Note that the plate heater 1 is maintained in advance at a predetermined temperature, for example, 200° C., by a heating control device (not shown).
その後所定時間、半導体基板51はプレートヒータ1に
載置された状態で加熱される。なお、加熱処理中は、図
示しない不活性ガス例えば窒素ガス供給装置から処理室
内に窒素ガスが吹き込まれることにより、半導体基板は
不活性ガス雰囲気におかれるとともに、処理中に半導体
基板上のレジストなどから生じるアウトガスや余分の窒
素ガスは、断熱カバー19から排出される。Thereafter, the semiconductor substrate 51 is heated while being placed on the plate heater 1 for a predetermined period of time. During the heat treatment, an inert gas (not shown), such as nitrogen gas, is blown into the processing chamber from a nitrogen gas supply device, so that the semiconductor substrate is placed in an inert gas atmosphere, and resists, etc. on the semiconductor substrate are exposed to the atmosphere during the heat treatment. Outgas and excess nitrogen gas generated from the heat insulating cover 19 are discharged from the heat insulating cover 19.
上記の加熱処理中は、クリーンエア供給装置35から供
給されるクリーンエアが、通気口29からカバー27内
に流入される。流入されたクリーンエアは、通気口31
.15を通って、さらに下部通気口9を通って排気ダク
ト7から外部へ排出される。このクリーンエアの流通に
より、処理室の周辺は空冷されるので、処理室の周辺た
とえば底板3、カバー27などがプレートヒータ1から
の熱によって高温たとえば50℃以上になることはない
。During the above heat treatment, clean air supplied from the clean air supply device 35 flows into the cover 27 from the vent 29. The inflowed clean air is passed through the vent 31
.. 15 and further passes through the lower ventilation port 9 and is discharged from the exhaust duct 7 to the outside. Since the area around the processing chamber is air-cooled by this circulation of clean air, the area around the processing chamber, such as the bottom plate 3 and the cover 27, will not be heated to a high temperature, e.g., 50° C. or higher, due to the heat from the plate heater 1.
次に、加熱処理後は、昇降装置(図示せず)によってプ
レートヒータlが下降され、半導体基板51は載置ビン
5上にarIlされる。このとき断熱部材2が、断熱室
25の下端面から隔離され、基板出入口33が形成され
る。同時にシャッタ一部材13も下降されることにより
、下部通気口9は遮蔽され、一方、通気口11は外部に
解放される。Next, after the heat treatment, the plate heater 1 is lowered by a lifting device (not shown), and the semiconductor substrate 51 is placed on the mounting bin 5. At this time, the heat insulating member 2 is isolated from the lower end surface of the heat insulating chamber 25, and a substrate entrance/exit 33 is formed. At the same time, the shutter member 13 is also lowered, so that the lower vent 9 is covered, while the vent 11 is opened to the outside.
そして、クリーンエア供給装置35から供給されるクリ
ーンエアは基板出入口33から流入され、載置ビン5に
保持された半導体基板51の雰囲気を通って通気口11
へ流入し、排気ダクト7から外部へ排出される。したが
って、加熱処理後は半導体基板51はクリーンエアの流
通によってすみやかに空冷され(ちなみに半導体基盤5
1を200℃に加熱処理した1分後には、半導体基盤5
コの温度を30℃にまで冷却可能であった。)、大気空
冷より速い速度での冷却効果が認められ、プレートヒー
タ1の輻射熱によってオーバーベークされることはない
ことが実証された。The clean air supplied from the clean air supply device 35 flows in from the substrate inlet/outlet 33 and passes through the atmosphere of the semiconductor substrate 51 held in the mounting bin 5 to the vent hole 11.
and is discharged from the exhaust duct 7 to the outside. Therefore, after the heat treatment, the semiconductor substrate 51 is quickly air-cooled by the circulation of clean air (by the way, the semiconductor substrate 51
One minute after heat-treating 1 to 200°C, the semiconductor substrate 5
It was possible to cool the temperature down to 30°C. ), a faster cooling effect than atmospheric air cooling was observed, and it was demonstrated that there was no overbaking due to the radiant heat of the plate heater 1.
以上詳細に説明したように本実施例によれば、加熱処理
後に加熱装置内に半導体基板などの非処理体を残留させ
ても被処理体がオーバーベークされることはない。As described in detail above, according to this embodiment, even if an unprocessed object such as a semiconductor substrate remains in the heating apparatus after the heat treatment, the object to be processed will not be overbaked.
また、加熱処理中はクリーンエア供給装置から供給され
るクリーンエアの気流により、処理室の周辺は空冷され
、処理室の周囲がプレートヒータからの熱によって高温
になることはないので、同様な加熱処理室を複数並置し
ても(図示せず)、相互の加熱処理室間の熱伝導の影響
はなく、いずれの処理室も適切な温度で加熱処理するこ
とができる。すなわち複数の処理室を並置して同時に複
数の被処理体を加熱処理することが可能な加熱装置を提
供することができる。In addition, during heat processing, the area around the processing chamber is air-cooled by the airflow of clean air supplied from the clean air supply device, and the area around the processing chamber does not become high temperature due to the heat from the plate heater, so the same heating Even if a plurality of processing chambers are arranged side by side (not shown), there is no influence of heat conduction between the heat processing chambers, and heat treatment can be performed in any of the processing chambers at an appropriate temperature. That is, it is possible to provide a heating device that can heat-process a plurality of objects to be processed at the same time by arranging a plurality of processing chambers side by side.
上記実施例では半導体基板などのベーキング処理をする
ベーキング装置に適用した例について説明したが、被処
理体を加熱処理する装置であれば何れにも適用可能であ
る。In the above embodiment, an example in which the present invention is applied to a baking apparatus for baking a semiconductor substrate or the like has been described, but the present invention can be applied to any apparatus that heats an object to be processed.
[発明の効果]
以上詳細に説明したように本発明によれば、加熱処理後
に加熱装置内に半導体基板などの非処理体を残留させて
も被処理体がオーバーベークされることはなく、また、
複数の処理室を並列して同時に複数の被処理体を加熱処
理することが可能な加熱装置を提供することができる。[Effects of the Invention] As explained in detail above, according to the present invention, even if an unprocessed object such as a semiconductor substrate remains in the heating device after heat treatment, the object to be processed will not be overbaked, and ,
It is possible to provide a heating device that can heat-process a plurality of objects to be processed at the same time by arranging a plurality of processing chambers in parallel.
第1図は本発明装置の実施例のベーキング装置の要部の
加熱処理前後の状態を示す図、第2図は第1図に示すベ
ーキング装置の要部の加熱処理中の状態を示す図である
。
1・・・・・・・・・プレートヒータ
2・・・・・・・・・断熱部材
5・・・・・・・・・載置ビン
6・・・・・・・・・排気装置
7・・・・・・・・・断熱カバー
9・・・・・・・・・下部通気口
11.
29.
5.
1・・・・・・・・・通気口
3・・・・・・・・・シャッタ一部材
5・・・・・・・・・クリーンエア供給装置1・・・・
・・・・・半導体基板FIG. 1 is a diagram showing the state of the main part of the baking device according to the embodiment of the present invention before and after heat treatment, and FIG. 2 is a diagram showing the state of the main part of the baking device shown in FIG. 1 during heat treatment. be. 1...Plate heater 2...Insulating member 5...Placement bin 6...Exhaust device 7・・・・・・・・・Insulation cover 9・・・・・・Lower vent 11. 29. 5. 1......Vent 3...Shutter part 5...Clean air supply device 1...
・・・・・・Semiconductor substrate
Claims (1)
レートヒータと、 このプレートヒータによる予め定められた加熱期間終了
後上記プレートヒータおよび上記被処理体を相対的に移
動させて離間させてこの被処理体を保持する保持手段と
、 この保持手段による被処理体保持状態でクリーンエアを
流通させ被処理体を冷却する冷却手段とを具備してなる
加熱装置。[Scope of Claims] A plate heater that heats an object to be processed while an inert gas is flowing to an exhaust port; and after a predetermined heating period by the plate heater, the plate heater and the object to be processed are relative to each other. A heating device comprising a holding means for moving and holding the object to be processed at a distance, and a cooling means for circulating clean air to cool the object while the object is held by the holding means.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP648189A JPH02187015A (en) | 1989-01-13 | 1989-01-13 | Heating device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP648189A JPH02187015A (en) | 1989-01-13 | 1989-01-13 | Heating device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02187015A true JPH02187015A (en) | 1990-07-23 |
Family
ID=11639667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP648189A Pending JPH02187015A (en) | 1989-01-13 | 1989-01-13 | Heating device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02187015A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002313796A (en) * | 2001-04-18 | 2002-10-25 | Gasonics:Kk | Substrate heat treatment system |
JP2015130522A (en) * | 2009-09-24 | 2015-07-16 | 株式会社半導体エネルギー研究所 | heat treatment apparatus |
-
1989
- 1989-01-13 JP JP648189A patent/JPH02187015A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002313796A (en) * | 2001-04-18 | 2002-10-25 | Gasonics:Kk | Substrate heat treatment system |
JP2015130522A (en) * | 2009-09-24 | 2015-07-16 | 株式会社半導体エネルギー研究所 | heat treatment apparatus |
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