JP2720442B2 - Method of manufacturing magnetoresistive element - Google Patents
Method of manufacturing magnetoresistive elementInfo
- Publication number
- JP2720442B2 JP2720442B2 JP63025450A JP2545088A JP2720442B2 JP 2720442 B2 JP2720442 B2 JP 2720442B2 JP 63025450 A JP63025450 A JP 63025450A JP 2545088 A JP2545088 A JP 2545088A JP 2720442 B2 JP2720442 B2 JP 2720442B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetoresistive
- electrode
- mask
- magnetoresistive element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title description 18
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 18
- 238000000059 patterning Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 9
- 238000007740 vapor deposition Methods 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 239000010408 film Substances 0.000 description 179
- 239000010936 titanium Substances 0.000 description 23
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 22
- 229910052719 titanium Inorganic materials 0.000 description 22
- 150000004767 nitrides Chemical class 0.000 description 19
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002555 FeNi Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910003266 NiCo Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000002683 reaction inhibitor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Hall/Mr Elements (AREA)
Description
【発明の詳細な説明】 以下の順序に従って本発明を説明する。DETAILED DESCRIPTION OF THE INVENTION The present invention will be described in the following order.
A.産業上の利用分野 B.発明の概要 C.従来技術［第３図］ D.発明が解決しようとする問題点 E.問題点を解決するための手段 F.作用 G.実施例［第１図、第２図］ H.発明の効果 （A.産業上の利用分野） 本発明は磁気抵抗素子の製造方法、特に基板上に形成
された磁気抵抗膜の電極部分の表面上に中間金属膜が形
成され、該中間金属膜の表面上に電極膜が形成された磁
気抵抗素子の製造方法に関する。A. Industrial application fields B. Summary of the invention C. Prior art [Fig. 3] D. Problems to be solved by the invention E. Means to solve the problems F. Function G. Example [No. FIGS. 1 and 2] H. Effects of the Invention (A. Industrial Application Field) The present invention relates to a method of manufacturing a magnetoresistive element, and more particularly, to a method of manufacturing a magnetoresistive film formed on a substrate by forming an intermediate metal on a surface of an electrode portion. The present invention relates to a method for manufacturing a magnetoresistive element in which a film is formed and an electrode film is formed on a surface of the intermediate metal film.
（B.発明の概要） 本発明は、製造プロセスを従らに複雑化することなく
磁気抵抗膜の下地からの剥れを有効に防止するため、 磁気抵抗膜、中間金属膜及び電極膜の連続蒸着により
全面的に形成し、該電極膜を、第１のマスク膜をマスク
としてエッチングすることによりパターニングし、次
に、上記金属膜を上記パターニングされた電極膜及びそ
の周囲部分を覆うように形成した第２のマスク層をマス
クとしてエッチングすることによりパターニングし、次
に、磁気抵抗膜をマスクとしてエッチングしてパターニ
ングすることにより磁気抵抗素子の本体を成す細い本体
部分とその両端の広い電極部分を形成するものである。(B. Summary of the Invention) The present invention provides a method for effectively preventing a magnetoresistive film from peeling off from a base without complicating the manufacturing process. The entire electrode film is formed by vapor deposition, and the electrode film is patterned by etching using the first mask film as a mask. Next, the metal film is formed so as to cover the patterned electrode film and its peripheral portion. Patterning is performed by etching using the second mask layer as a mask, and then patterning is performed by etching using the magnetoresistive film as a mask, thereby forming a thin main body portion forming a main body of the magnetoresistive element and wide electrode portions at both ends thereof. To form.
（C.従来技術）［第３図］ 磁気抵抗素子は特開昭57−126187号公報等によって紹
介されているように基板上に磁気抵抗膜を設けてなるも
ので、磁界の強さによって抵抗の大きさが変化すること
を利用して磁気を電気に変換するのに利用される。(C. Prior Art) [FIG. 3] A magnetoresistive element is provided by providing a magnetoresistive film on a substrate as introduced in Japanese Patent Application Laid-Open No. 57-126187. It is used to convert magnetism into electricity by utilizing the change in the size of the magnetic field.
ところで、磁気抵抗素子においては磁気抵抗膜が薄い
場合、磁気抵抗膜の電極部分上にアルミニウムからなる
電極膜を形成すると磁気抵抗膜が下地から剥れ易くなる
という問題があった。この点について具体的に説明する
と次のとおりである。In the case of a magnetoresistive element having a thin magnetoresistive film, if an electrode film made of aluminum is formed on an electrode portion of the magnetoresistive film, there is a problem that the magnetoresistive film is easily peeled off from a base. This point is specifically described as follows.
即ち、磁気抵抗膜が1000Å以上と比較的厚い場合には
磁気抵抗膜に直接リード線を半田付けするという電極の
取り出しが可能であるが、磁気抵抗変換定数を大きくす
るために磁気抵抗膜を500Å以下というように薄くした
場合には、磁気抵抗膜に直接リード線を半田付けをする
と磁気抵抗膜が半田に食われてしまうことになる。That is, when the magnetoresistive film is relatively thick, such as 1000 mm or more, it is possible to take out the electrode by directly soldering the lead wire to the magnetoresistive film. If the thickness is reduced as follows, if the lead wire is soldered directly to the magnetoresistive film, the magnetoresistive film will be eroded by the solder.
そのため、特開昭57−126187号公報に記載されたよう
に磁気抵抗膜表面に反応抑制剤としてチタン等の中間金
属膜を形成し、更に該中間金属膜の表面にアルミニウム
からなる電極膜を形成するようにすることも試みられ
た。しかし、磁気抵抗膜が薄い場合には剥れるという事
故が発生した。具体的には、Ni/Coからなる非常に薄い
磁気抵抗膜、チタン膜（中間金属膜）、アルミニウム電
極膜を順番に蒸着し、その後、先ずアルミニウム電極膜
をパターニングし、次いでチタン膜、磁気抵抗膜を順次
パターニングしてみたが、磁気抵抗膜の電極部分、チタ
ン膜と、アルミニウム電極膜を同じ大きさにしている限
り、そのチタン膜あるいは磁気抵抗膜のパターニングの
ためのエッチングの際に磁気抵抗膜と下地との間で剥れ
が生じることが多かった。Therefore, as described in JP-A-57-126187, an intermediate metal film such as titanium is formed as a reaction inhibitor on the surface of the magnetoresistive film, and an electrode film made of aluminum is further formed on the surface of the intermediate metal film. Attempts have been made to do so. However, there was an accident that the magnetoresistive film was peeled off when it was thin. Specifically, an extremely thin magnetoresistive film of Ni / Co, a titanium film (intermediate metal film), and an aluminum electrode film are sequentially deposited, and thereafter, the aluminum electrode film is first patterned, and then the titanium film and the magnetoresistive film are formed. I tried patterning the film sequentially, but as long as the electrode portion of the magnetoresistive film, the titanium film and the aluminum electrode film were the same size, the magnetoresistive film was etched during the patterning of the titanium film or the magnetoresistive film. Peeling often occurred between the film and the base.
そこで、直接リード線を半田付けできないような薄い
磁気抵抗膜の磁気抵抗素子については第３図に示すよう
な構造にして電極取り出しが行われていた。同図におい
て、ａはシリコン半導体基板、ｂは該半導体基板ａの表
面に全面的に形成されたシリコン酸化膜、ｃは該酸化膜
ｂ表面に全面的に形成されたナイトライド（SiN）膜、
ｄは該ナイトライド膜ｃの表面に所定のパターンで形成
された磁気抵抗膜で、例えばNi/Coからなる。ｅは該磁
気抵抗膜ｄ表面を含めナイトライド膜ｃ上に形成された
ナイトライド膜で、磁気抵抗膜ｄが下地であるナイトラ
イド膜ｃから剥れるのを防止する役割を果す。ｆは該ナ
イトライド膜ｅに形成されたコンタクトホールで、磁気
抵抗膜ｄの電極部分上に位置されている。Therefore, for a magnetoresistive element having a thin magnetoresistive film in which a lead wire cannot be directly soldered, electrodes are taken out by using a structure as shown in FIG. In the figure, a is a silicon semiconductor substrate, b is a silicon oxide film formed entirely on the surface of the semiconductor substrate a, c is a nitride (SiN) film formed entirely on the surface of the oxide film b,
d is a magnetoresistive film formed in a predetermined pattern on the surface of the nitride film c and is made of, for example, Ni / Co. e denotes a nitride film formed on the nitride film c including the surface of the magnetoresistive film d, and serves to prevent the magnetoresistive film d from peeling off from the underlying nitride film c. f is a contact hole formed in the nitride film e, and is located on the electrode portion of the magnetoresistive film d.
ｇは金膜、ｈはチタン膜で、該金属膜ｇ、ｈは同じパ
ターンを有し、磁気抵抗膜ｄから上記コンタクトホール
ｆを通じて電極を引き出してリード線に導びくものであ
る。ｉは例えばスミライト等からなる絶縁膜で、磁気抵
抗素子の表面を覆って保護する。ｊは該絶縁膜ｉの窓部
で、該窓部ｊに上記金属膜ｇ、ｈの一部分の表面が露出
しており、該露出部分にリードｋがボンディングされて
いる。g is a gold film, h is a titanium film, and the metal films g and h have the same pattern. The electrodes are drawn from the magnetoresistive film d through the contact holes f and led to lead wires. i is an insulating film made of, for example, Sumilite, which covers and protects the surface of the magnetoresistive element. Reference numeral j denotes a window portion of the insulating film i. A part of the surface of the metal films g and h is exposed in the window portion j, and a lead k is bonded to the exposed portion.
このような磁気抵抗素子によれば、ナイトライド膜ｅ
で磁気抵抗膜ｄを下地に押さえつけることができる点で
優れているといえる。According to such a magnetoresistive element, the nitride film e
It can be said that this is excellent in that the magnetoresistive film d can be pressed against the base.
（D.発明が解決しようとする問題点） ところが、第３図に示すような磁気抵抗素子には製造
工程が多くなるという問題があった。(D. Problems to be Solved by the Invention) However, the magnetoresistive element as shown in FIG. 3 has a problem that the number of manufacturing steps is increased.
というのは、第３図に示す磁気抵抗素子を製造する場
合、磁気抵抗膜ｄを蒸着等で形成した後パターニング
し、ナイトライド膜ｅを気相成長により形成し、その後
該ナイトライド膜ｅにフォトエッチングによりスルーホ
ールｆを形成し、その後金膜ｇ及びチタン膜ｈを蒸着等
により形成する必要があった。That is, when manufacturing the magnetoresistive element shown in FIG. 3, a magnetoresistive film d is formed by vapor deposition or the like, followed by patterning, a nitride film e is formed by vapor phase growth, and then the nitride film e is formed on the nitride film e. It was necessary to form the through-hole f by photo-etching and then form the gold film g and the titanium film h by vapor deposition or the like.
即ち、磁気抵抗膜ｄと金属膜ｇ、ｈとを連続蒸着によ
り形成することができず、磁気抵抗膜ｄの形成後に一旦
蒸着装置から取り出し、その後、いくつかの工程を経た
うえで再び蒸着装置に入れて金属膜ｇ、ｈの蒸着を行う
必要があり、製造工数が多かった。これは当然のことな
がら磁気抵抗素子の低価格化を阻む要因となり好ましく
ない。That is, the magnetoresistive film d and the metal films g and h cannot be formed by continuous vapor deposition. After the magnetoresistive film d is formed, the magnetoresistive film d is once taken out of the vapor deposition device, and then subjected to several steps, and then again. , And the metal films g and h need to be deposited, and the number of manufacturing steps is large. This is, of course, a factor that hinders the cost reduction of the magnetoresistive element, and is not preferable.
また、コンタクトホールｆを通じて金属膜ｇ、ｈによ
り電極の取り出しを行うので金属膜ｇ、ｈがコンタクト
ホールｆによる段部において段切れを生じる虞れがあっ
た。Further, since the electrodes are taken out by the metal films g and h through the contact holes f, there is a possibility that the metal films g and h may be disconnected at the steps due to the contact holes f.
本発明はこのような問題点を解決すべく為されたもの
であり、製造プロセスを従らに複雑化することなく磁気
抵抗膜の下地からの剥れを有効に防止し、更には電極の
断線を防止することを目的とする。The present invention has been made to solve such a problem, and effectively prevents the magnetoresistive film from peeling off from the base without complicating the manufacturing process. The purpose is to prevent.
（E.問題点を解決するための手段） 本発明は上記問題点を解決するため、磁気抵抗膜、中
間金属膜及び電極膜の連続蒸着により全面的に形成し、
該電極膜を、第１のマスク膜をマスクとしてエッチング
することによりパターニングし、次に、上記中間金属膜
を上記パターニングされた電極膜及びその周囲部分を覆
うように形成した第２のマスク層をマスクとしてエッチ
ングすることによりパターニングし、次に、磁気抵抗膜
をマスクとしてエッチングしてパターニングすることに
より磁気抵抗素子の本体を成す細い本体部分とその両端
の電極部分を形成することを特徴とする。(E. Means for Solving the Problems) In order to solve the above problems, the present invention forms the entire surface by continuous evaporation of a magnetoresistive film, an intermediate metal film and an electrode film,
The electrode film is patterned by etching using the first mask film as a mask, and then a second mask layer formed by covering the intermediate metal film so as to cover the patterned electrode film and a peripheral portion thereof is formed. Patterning is performed by etching as a mask, and then patterning is performed by etching using a magnetoresistive film as a mask to form a thin main body portion forming the main body of the magnetoresistive element and electrode portions at both ends thereof.
（F.作用） 本発明によれば、電極膜のパターニング後中間金属
膜、そして磁気抵抗膜を選択的にエッチングするときに
第２のマスク層で電極膜を完全に覆った状態にすること
ができ、その結果、そのエッチングの際に電極膜が下地
に対して動くことを防止でき延いては電極膜の動きによ
る磁気抵抗膜の下地からの剥れが生じる虞れはなくな
る。(F. Function) According to the present invention, it is possible to completely cover the electrode film with the second mask layer when selectively etching the intermediate metal film and the magnetoresistive film after patterning the electrode film. As a result, it is possible to prevent the electrode film from moving with respect to the base during the etching, so that there is no possibility that the magnetoresistive film is peeled from the base due to the movement of the electrode film.
そして、磁気抵抗膜の電極部分の表面上に中間金属膜
を形成し、該中間金属膜の表面上に電極膜を形成するこ
ととし、磁気抵抗膜と中間金属膜、電極膜との間に絶縁
膜を介在させず、磁気抵抗膜、中間金属膜及び電極膜を
連続蒸着により形成することができるので、製造プロセ
スを簡略化することができる。Then, an intermediate metal film is formed on the surface of the electrode portion of the magnetoresistive film, and an electrode film is formed on the surface of the intermediate metal film. An insulating film is formed between the magnetoresistive film, the intermediate metal film, and the electrode film. Since the magnetoresistive film, the intermediate metal film, and the electrode film can be formed by continuous vapor deposition without any intervening film, the manufacturing process can be simplified.
（G.実施例）［第１図、第２図］ 以下、本発明磁気抵抗素子の製造方法を図示実施例に
従って詳細に説明する。(G. Example) [FIGS. 1 and 2] Hereinafter, a method of manufacturing a magnetoresistive element according to the present invention will be described in detail with reference to illustrated examples.
第１図は本発明磁気抵抗素子の製造方法により製造さ
れる磁気抵抗素子の一例を示す断面図である。同図にお
いて、１はシリコン半導体基板、２は該半導体基板１の
表面に全面的に形成されたシリコン酸化膜、３は該シリ
コン酸化膜２の表面に全面的に形成されたナイトライド
膜、４は該ナイトライド膜３の表面に選択的に形成され
た磁気抵抗膜で、例えばNi（ニッケル）/Co（コバル
ト）からなり、例えば500Å以下の薄い膜厚を有してい
る。4aは磁気抵抗膜の電極部分である。磁気抵抗膜４は
両端に電極部分4a、4a（一方は図面に現われない。）を
有し、本体を成す中間部が細く且つつづら折り状に形成
された平面形状を有している。即ち、磁気抵抗膜４は、
細く磁気抵抗素子の本体を成す部分と、その本体を成す
部分の両端に位置し電極を取り出すために広く形成され
た部分からなり、本明細書において、磁気抵抗膜の電極
部分とは、この電極を取り出すために本体を成す部分よ
りも広くされた部分を言う。FIG. 1 is a sectional view showing an example of a magnetoresistive element manufactured by the method for manufacturing a magnetoresistive element of the present invention. In the figure, 1 is a silicon semiconductor substrate, 2 is a silicon oxide film formed entirely on the surface of the semiconductor substrate 1, 3 is a nitride film formed entirely on the surface of the silicon oxide film 2, 4 Is a magnetoresistive film selectively formed on the surface of the nitride film 3 and is made of, for example, Ni (nickel) / Co (cobalt) and has a thin film thickness of, for example, 500 ° or less. 4a is an electrode portion of the magnetoresistive film. The magnetoresistive film 4 has electrode portions 4a, 4a at both ends (one of which is not shown in the drawing), and has a flat shape in which an intermediate portion forming a main body is formed thin and in a serpentine shape. That is, the magnetoresistive film 4
It consists of a thin part forming the main body of the magnetoresistive element, and parts formed at both ends of the part forming the main body and formed widely for taking out the electrodes. The part that is wider than the part that makes up the main body to take out.
５は磁気抵抗膜４の電極部分4a上に形成されたチタン
膜で、該チタン膜５は電極部分4aよりも稍小面積に形成
されている。６は該チタン膜５上にこれよりも小面積に
形成されたアルミニウムからなる電極膜である。７は磁
気抵抗素子表面を略全面的に覆って保護するナイトライ
ド膜、８は該ナイトライド膜７にエッチングにより形成
した窓部で、電極膜６上に位置されており、該窓部８内
にてリード９の一端の電極膜６へのボンディングが為さ
れている。Reference numeral 5 denotes a titanium film formed on the electrode portion 4a of the magnetoresistive film 4, and the titanium film 5 is formed in a slightly smaller area than the electrode portion 4a. Reference numeral 6 denotes an electrode film made of aluminum and formed on the titanium film 5 with a smaller area. Reference numeral 7 denotes a nitride film that covers and protects the surface of the magnetoresistive element substantially entirely, and 8 denotes a window formed by etching the nitride film 7 and is located on the electrode film 6. The bonding of one end of the lead 9 to the electrode film 6 is performed.
第２図（Ａ）乃至（Ｆ）は第１図に示した磁気抵抗素
子の製造方法（本発明磁気抵抗素子の製造方法の一つの
実施例）を工程順に示す断面図である。2 (A) to 2 (F) are sectional views showing a method of manufacturing the magnetoresistive element shown in FIG. 1 (one embodiment of the method of manufacturing a magnetoresistive element of the present invention) in the order of steps.
（Ａ）シリコン半導体基板１上にシリコン酸化膜２を形
成し、該シリコン酸化膜２上にナイトライド膜３を形成
する。第２図（Ａ）はナイトライド膜３形成後の状態を
示す。(A) A silicon oxide film 2 is formed on a silicon semiconductor substrate 1, and a nitride film 3 is formed on the silicon oxide film 2. FIG. 2A shows a state after the nitride film 3 is formed.
（Ｂ）次に、同図（Ｂ）に示すように、ナイトライド膜
３上に磁気抵抗膜４、チタン膜５、アルミニウム６を連
続蒸着により形成する。(B) Next, as shown in FIG. 2B, a magnetoresistive film 4, a titanium film 5, and aluminum 6 are formed on the nitride film 3 by continuous vapor deposition.
（Ｃ）次に、電極膜６上にフォトレジスト層（第１のマ
スク層）10を選択的に形成し、該フォトレジスト層10を
マスクとして電極膜６をエッチングすることにより第２
図（Ｃ）に示すように電極部分4a上方にその電極部分4a
よりも小面積で電極膜６が残存するようにする。同図
（Ｃ）において２点鎖線で示す部分は電極膜６のエッチ
ングにより除去された部分である。(C) Next, a photoresist layer (first mask layer) 10 is selectively formed on the electrode film 6, and the electrode film 6 is etched by using the photoresist layer 10 as a mask to form a second layer.
As shown in FIG. 4C, the electrode portion 4a is located above the electrode portion 4a.
The electrode film 6 is left in a smaller area than that. In FIG. 3C, the portion shown by the two-dot chain line is the portion removed by etching the electrode film 6.
（Ｄ）次に、上記フォトレジスト層10を除去したうえで
改めてフォトレジスト層（第２のマスク層）11を選択的
に形成し、該フォトレジスト層11をマスクとしてチタン
膜５をエッチングすることにより第２図（Ｄ）に示すよ
うにチタン膜５が電極膜４の電極部分4a上に該電極部分
4aよりも小面積で且つ電極膜６よりも大面積で残存する
ようにする。従って、このエッチングは、マスクである
フォトレジスト層11が電極膜６の上面だけでなく側面も
完全に覆いフォトレジスト層11の周縁部がチタン膜５に
強固に付着された状態で行われる。従って、電極膜６が
その下地であるチタン膜５に対して動こうとすることが
フォトレジスト層11によって阻止されるので、エッチン
グ中にチタン膜５と電極膜６との間で剥れが生じる虞れ
がない。尚、第２図（Ｄ）において２点鎖線で示す部分
はチタン膜５のエッチングにより除去された部分であ
る。(D) Next, after the photoresist layer 10 is removed, a photoresist layer (second mask layer) 11 is selectively formed again, and the titanium film 5 is etched using the photoresist layer 11 as a mask. As a result, as shown in FIG. 2 (D), the titanium film 5 is placed on the electrode portion 4a of the electrode film 4,
The area is smaller than 4a and larger than the electrode film 6. Therefore, this etching is performed in a state where the photoresist layer 11 serving as a mask completely covers not only the upper surface but also the side surfaces of the electrode film 6 and the peripheral portion of the photoresist layer 11 is firmly attached to the titanium film 5. Therefore, since the photoresist layer 11 prevents the electrode film 6 from moving with respect to the titanium film 5 as the base, peeling occurs between the titanium film 5 and the electrode film 6 during the etching. There is no fear. In FIG. 2 (D), a portion shown by a two-dot chain line is a portion removed by etching the titanium film 5.
（Ｅ）次に、上記フォトレジスト層11を除去したうえで
改めてフォトレジスト層（第３のマスク層）12を選択的
に形成し、該フォトレジスト層12をマスクとして磁気抵
抗膜４をエッチングすることによりパターニングする。
磁気抵抗膜４の電極部分4aはチタン膜５よりも大面積な
るように設計されており、このエッチングはマスクであ
るフォトレジスト層12が電極膜６の上面だけでなく電極
膜６の側面、チタン膜５上面の露出した部分、チタン膜
５の側面を完全に覆いフォトレジスト層12の電極部分4a
上の部分の周縁が電極部分4a表面に付着した状態で行わ
れる。従って、電極膜６、チタン膜５がその下地である
電極部分4aに対して動こうとすることがフォトレジスト
層12によって阻止されるのでエッチング中にチタン膜５
及び電極膜６が剥れるのを防止することができる。(E) Next, after removing the photoresist layer 11, a photoresist layer (third mask layer) 12 is selectively formed again, and the magnetoresistive film 4 is etched using the photoresist layer 12 as a mask. By doing so, patterning is performed.
The electrode portion 4a of the magnetoresistive film 4 is designed to have a larger area than the titanium film 5, and this etching is performed by etching the photoresist layer 12 as a mask not only on the upper surface of the electrode film 6, but also on the side surfaces of the electrode film 6 and the titanium film. The electrode portion 4a of the photoresist layer 12 completely covers the exposed portion of the upper surface of the film 5 and the side surface of the titanium film 5.
This is performed in a state where the periphery of the upper portion is attached to the surface of the electrode portion 4a. Therefore, the photoresist layer 12 prevents the electrode film 6 and the titanium film 5 from moving with respect to the underlying electrode portion 4a.
In addition, peeling of the electrode film 6 can be prevented.
（Ｆ）その後、第２図（Ｆ）に示すように磁気抵抗素子
を保護する例えばナイトライド膜７を形成し、その後該
ナイトライド膜７に電極形成用の窓（８）を形成し、リ
ード線（９）をボンディングすると第１図に示すような
磁気抵抗素子が得られることになる。(F) Thereafter, as shown in FIG. 2 (F), for example, a nitride film 7 for protecting the magnetoresistive element is formed, and thereafter, a window (8) for forming an electrode is formed in the nitride film 7, and a lead is formed. Bonding the line (9) results in a magnetoresistive element as shown in FIG.
尚、中間金属膜の材料としてチタンTiに限らず、モリ
ブデンMo、クロムCr、タングステンＷ等を用いることが
でき、電極膜の材料としてアルミニウムAlに限らず、金
Au、銅Cu等を用いることができる。そして、磁気抵抗膜
の材料としてニッケル・コバルトNiCoに限らず鉄・ニッ
ケルFeNi等でも良い。The material of the intermediate metal film is not limited to titanium Ti, but may be molybdenum Mo, chromium Cr, tungsten W, or the like. The material of the electrode film is not limited to aluminum Al, but may be gold.
Au, copper Cu, etc. can be used. The material of the magnetoresistive film is not limited to nickel / cobalt NiCo, but may be iron / nickel FeNi or the like.
（H.発明の効果） 以上に述べたところから明らかなように、本発明によ
れば、電極膜のパターニング後中間金属膜、そして磁気
抵抗膜を選択的にエッチングするときに第２のマスク層
で電極膜を完全に覆った状態にすることができ、その結
果、そのエッチングの際に電極膜が下地に対して動くこ
とを防止でき延いては電極膜の動きによる磁気抵抗膜の
下地からの剥れが生じる虞れはなくなる。(H. Effects of the Invention) As is apparent from the above description, according to the present invention, the second mask layer is formed when the intermediate metal film and the magnetoresistive film are selectively etched after patterning the electrode film. Can completely cover the electrode film, and as a result, the electrode film can be prevented from moving with respect to the base during the etching. There is no danger of peeling.
そして、磁気抵抗膜の電極部分の表面上に中間金属膜
を形成し、該中間金属膜の表面上に電極膜を形成するこ
ととし、磁気抵抗膜と中間金属膜、電極膜との間に絶縁
膜を介在させず、磁気抵抗膜、中間金属膜及び電極膜を
連続蒸着により形成することができるので、製造プロセ
スを簡略化することができる。Then, an intermediate metal film is formed on the surface of the electrode portion of the magnetoresistive film, and an electrode film is formed on the surface of the intermediate metal film. An insulating film is formed between the magnetoresistive film, the intermediate metal film, and the electrode film. Since the magnetoresistive film, the intermediate metal film, and the electrode film can be formed by continuous vapor deposition without any intervening film, the manufacturing process can be simplified.
第１図は本発明磁気抵抗素子の製造方法により製造され
る磁気抵抗素子の一例を示す断面図、第２図（Ａ）乃至
（Ｆ）は図１に示した磁気抵抗素子の製造方法（本発明
磁気抵抗素子の製造方法の一つの実施例）を工程順に示
す断面図、第３図は磁気抵抗素子の従来例を示す断面図
である。 符号の説明 １……基板、４……磁気抵抗膜、4a……磁気抵抗膜の電
極部分、 ５……中間金属膜、６……電極膜、10……第１のマスク
層、 11……第２のマスク層、12……第３のマスク層。FIG. 1 is a cross-sectional view showing an example of a magnetoresistive element manufactured by the method of manufacturing a magnetoresistive element of the present invention, and FIGS. 2 (A) to 2 (F) show a method of manufacturing the magnetoresistive element shown in FIG. FIG. 3 is a cross-sectional view showing a method of manufacturing a magnetoresistive element according to an embodiment of the present invention in the order of steps, and FIG. 3 is a cross-sectional view showing a conventional example of a magnetoresistive element. DESCRIPTION OF SYMBOLS 1 ... substrate, 4 ... magnetoresistive film, 4a ... electrode part of magnetoresistive film, 5 ... intermediate metal film, 6 ... electrode film, 10 ... first mask layer, 11 ... Second mask layer, 12... Third mask layer.
Claims (1)
金属膜及び電極膜の三層構造の膜を全面的に形成し、 最上層である上記電極膜を、その表面に選択的に形成し
た第１のマスク層をマスクとしてエッチングすることに
よりパターニングし、 次に、上記中間金属膜を上記パターニングされた電極膜
及びその周囲部分を覆うように形成した第２のマスク層
をマスクとしてエッチングすることによりパターニング
し、 次に、磁気抵抗膜を上記電極膜及び中間金属膜とその周
囲部分を少なくとも覆う第３のマスク層をマスクとして
エッチングしてパターニングすることにより磁気抵抗素
子の本体を成す細い本体部分とその両端に位置するそれ
より広い電極部分を形成する ことを特徴とする磁気抵抗素子の製造方法1. A three-layered film including a magnetoresistive film, an intermediate metal film and an electrode film is entirely formed on a substrate by continuous vapor deposition, and the uppermost electrode film is selectively formed on the surface thereof. Then, patterning is performed by etching using the first mask layer thus formed as a mask. Next, etching is performed using the second mask layer formed so as to cover the above-mentioned patterned electrode film and the peripheral portion of the above-mentioned intermediate metal film as a mask. Then, the magnetoresistive film is etched and patterned using the third mask layer covering at least the electrode film and the intermediate metal film and the peripheral portion thereof as a mask, thereby forming a thin main body of the magnetoresistive element. Forming a portion and wider electrode portions located at both ends of the portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63025450A JP2720442B2 (en) | 1988-02-04 | 1988-02-04 | Method of manufacturing magnetoresistive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63025450A JP2720442B2 (en) | 1988-02-04 | 1988-02-04 | Method of manufacturing magnetoresistive element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01200683A JPH01200683A (en) | 1989-08-11 |
| JP2720442B2 true JP2720442B2 (en) | 1998-03-04 |
Family
ID=12166353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63025450A Expired - Fee Related JP2720442B2 (en) | 1988-02-04 | 1988-02-04 | Method of manufacturing magnetoresistive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2720442B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4294151T1 (en) * | 1991-12-03 | 1994-01-13 | Nippon Denso Co | Magnetoresistive element and manufacturing method therefor |
| JP2836474B2 (en) * | 1993-12-15 | 1998-12-14 | 日本電気株式会社 | Magnetoresistive element and manufacturing method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55123183A (en) * | 1979-03-15 | 1980-09-22 | Nec Corp | Magnetic detector |
| JPS60102781A (en) * | 1983-11-09 | 1985-06-06 | Hitachi Ltd | Magneto-resistance element |
| JPS60254781A (en) * | 1984-05-31 | 1985-12-16 | Fujitsu Ltd | Manufacture of magnetism detector |
| JPS62128578A (en) * | 1985-11-29 | 1987-06-10 | Asahi Chem Ind Co Ltd | Ferromagnetic magnetoresistance element and manufacture of the same |
-
1988
- 1988-02-04 JP JP63025450A patent/JP2720442B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01200683A (en) | 1989-08-11 |
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