JP2716663B2 - Semiconductor die testing equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the field of semiconductor device testing, and more particularly to an apparatus for supporting a semiconductor die on a carrier during a burn-in test.

[0002]

2. Description of the Related Art Many kinds of semiconductor devices are manufactured according to similar manufacturing processes. The starting substrate (usually a thin wafer of silicon) is doped, masked and etched in several steps. Each process differs depending on the type of device to be manufactured. As a result of such processing, multiple dies are formed on each wafer. Each die on the wafer is subjected to a simple test of its overall performance, and the poorly performing dies are either mechanically marked or located by software. This simple test is only a rough guide to performance and does not guarantee that the die will have no defects or that it will have enough specifications to be packaged.

If the test shows that the test has formed near-performing dies, many of the dies on the wafer have been shown to be performing well. The die is cut with a die cutting saw, and the poorly performing die is scrapped. The remaining dies are then individually packaged in a plastic package or package 1 in a ceramic package.
Each die is attached at a rate of one die. Once the die has been loaded into the package, the package is rigorously electrically tested. As a result of this test, packages that have been found to perform poorly, or that are in doubt as to whether they will operate to the specified specifications, will be scrapped or used for special purposes.

It is a waste of time and material to load unusable dies, which, as a result of the test, indicate that they have to be scrapped, which is a factor of cost increase. Dynamic random access memory (DRA
M) or static random access memory (S
RAM) has a relatively narrow margin,
This situation is uneconomic. However, a method of thoroughly examining the performance of a die before package loading at low cost and preventing loading of a die having poor performance, and loading only a die that can be a product has not been known so far. Second, package loading also becomes a limiting factor for burn-in testing, as it also imposes other restrictions that the package loading must withstand the stress conditions of the burn-in test.

[0005]

By the way, as known as a multi-chip module (MCM), it has been proposed to package a large number of integrated circuits into a single unit. However, this raises two problems when conventional test methods are applied. The first problem is that the conventional lead frame package is not used,
This makes the individual test method difficult to test.
The second problem is that when multiple devices are assembled into a single package, the performance of the package is determined by that of the lowest performing die. Thus, these dies will be individually tested by the probe using room temperature and hot chuck test techniques while still on the wafer. That is, the ability to pre-distribute each die is limited by such a probe-based test technique.

[0006] Further, there is increasing interest in providing components with fully known performance prior to package loading. This is due not only to the cost associated with package loading but also to the growing demand for multi-chip modules. In the MCM, many components are tested in a die and assembled into a single unit (assembly). Although various techniques have been proposed for test, burn-in and performance testing of a single die, it is desirable to map the dies on a wafer before assembling as many features as possible. Ideally, one wants to map all the characteristics to the wafer.

[0007] Apart from the economics of testing components that are individually loaded into a single component package, the MCM requires testing, especially before assembly. For individually packaged components, if the effective component yield from pre-package testing to final delivery is, for example, 95%, as long as the cost of package loading remains at 10% of manufacturing cost. No one will pay attention to the cost of packaging a defective part. However, if the cost of package loading is quite high, such as with ceramic encapsulated components, the individual costs of package loading are such that the additional cost is equal to the cost of package loading (C _PACKAGE ) divided by the yield. Testing the unloaded dies for the components to be added will increase economics. That is, C _DIE × (C _PACKAGE / _Yield ) = C _DIE × C _ADDL.KGD (where C means cost, C _DIE is the manufacturing cost of a good die, and C _ADDL.KGD is a good product. Die (Kno
wn The additional cost of testing unloaded dies to produce a Good Die. )

It should be noted that for individually loaded components, the die manufacturing cost C _DIE is not a factor in determining C _ADDL.KGD . The above equation changes for MCM. That is, C _DIE × (number of dies × C _PACKAGE / yield) = C _DIE ×
C _{ADDL.KGD In} this same part type module, C _DIE
Is not a factor in determining C _ADDL.KGD . However, this equation must be modified for mixed part type modules to account for the variable cost and yield of the die.

In the case of an MCM, the cost of packaging a defective component is proportional to the number of dies in the module.
That is, in a × 16 memory array module, if the yield from die inspection to unloading is 95%, C
_ADDL.KGD is (16 / 0.95) × C _PACKAGE = C _ADDL.KGD .
Therefore, the additional cost of testing the KGD die is
Sixteen times the cost of testing an unrepairable module, but still economical. This value is modified if the ability to repair a bad module is taken into account.

[0010] In terms of material waste reduction, increased profits, and improved yield, it is desirable to test the dies before packaging them in a multichip. K in MCM
If only the GD die can be used, the yield of the MCM is greatly improved.

[0011] Testing an unloaded die requires considerable effort. Because the test package must be kept separate from the die, temporary package loading for this is more complex than either standard individual package loading or MCM package loading. The package must be compatible with test and burn-in inspections, and the die must be bonded during the inspection without damaging the die on the bond pads and the like.

The present invention proposes a method for testing unloaded dies using a two-piece reusable burn-in / test fixture. This fixture is split in half, one of which is the device under test (DUT; Devic).
e Under Test) A die cavity plate for receiving a semiconductor die. The die is placed in a cavity in the first half of the fixture, and the die contact member, the other half of the fixture,
Used to establish contact with the bond pads on the die and electrical continuity between the bond pads and external connector leads on the fixture.

In a preferred embodiment of the present invention, external connector leads are used, which are provided as a dual in-line package (DIP) or quad flat pack (QFP) arrangement. The fixture makes it possible to test the dies in the form of individually loaded and makes electrical contact with the single die and the burn-in oven.

In such an arrangement, the bond pads or other contact points on the die must be aligned at the fixture. The fixture must hold the die in alignment without damaging the die, especially the bond pads. This fixture is then operated during the test process.

One of the advantages of a temporary package is that the flexibility of the loading does not have to meet the various needs of conventional packages. That is, the demands so far are cumbersome and cannot be easily applied to the final use purpose other than the test or burn-in inspection purpose. Because the die is removed from the temporary package after testing, such a temporary package need only be useful for various tests and burn-in inspections.

Temporary packages are specially made for test and burn-in inspections and are therefore easy to assemble for temporary use and at least partially facilitate test and burn-in inspections. It is desired that

In commonly owned US Pat. No. 4,899,107, a fixture for a separate TAB (Tape Automated Bonding) die for reusable burn-in inspection and testing is disclosed. This fixture is divided in half, one is the unit under test (UUT; Unit Un
A die cavity plate for receiving a semiconductor die as a der test). The other half provides electrical communication with the die and the burn-in oven.

In the first half of the test fixture:
There is a cavity into which the die is inserted with its circuit side up. The die is placed on a floating platform. The second half of the test fixture is a rigid, high temperature substrate to which the probe corresponding to each die pad is mounted. Each of the plurality of probes is connected to a substrate (PC
(Similar to a board). As a result, each die pad has
They are electrically separated from each other. The tips of each probe are arranged in an array so that eight to sixteen dies can be processed.

The respective halves of the test fixture are merged so that each pad of each die is aligned with the tip of the corresponding probe. The test fixture is arranged to accommodate 8 to 16 die groups to maximize efficiency of performance testing.

When each part is individually divided,
Several test steps and related steps are required. For this reason, it is inconvenient to hold many dies in one test fixture.

Various connection types are used to connect the die to the package or other connection points in the MCM.
These connection types include wire bonding, TA
B connection, direct bump bonding to the substrate and the use of conductive adhesives.

The bond pad is a conductive area on the die surface,
Used as an internal connection to bring the circuit on the die into contact with the outside world. Typically, the conductor is bonded to the bond pad, but rather than actually bonding, electrical contact with the bond pad can be achieved by crimping the conductor on the bond pad.

One of the problems encountered in unloaded die burn-in testing and overall performance testing is the physical stress caused by the connection of the bond pads to external connection circuitry. This problem is compounded by the fact that in many die arrangements the bond pads are recessed below the surface level of the passivation layer.
The passivation layer is made of a low temperature eutectic glass, such as BPSG, and is applied to the die to protect circuits on the die. (Strictly speaking, the term "eutectic" is not suitable for glass, which is an amorphous fluid, but refers to the properties of certain glasses that, due to their composition, readily flow at a given temperature. Used to describe.)

Ohmic contact between bond pads or test points on the die and the test carrier package of the KGD die is of interest. It is difficult to achieve and maintain a constant ohmic contact without damaging the bond pads on the die and the passivation layer. The design criteria for such ohmic contacts are somewhat different from those of the carrier package.

Conventional devices for packaging semiconductor devices include a carrier tray that contains a plurality of ceramic-type packages, such as DIP or QFP packages. The die is inserted with a carrier that supports the package, secured to the package, and electrically connected to the package. The metal lid is supported on the package by a bridge clamp that clamps the carrier tray on the package. The bridge clamp tightens the lid against the package. The lid is then fused to the package, typically by soldering. The package is then removed from the carrier tray.

[0026]

SUMMARY OF THE INVENTION In accordance with the present invention, a semiconductor die is inserted into a carrier tray and positioned such that bond pads or similar contact points on the die align with die contact members on the substrate. Is placed. The die contacting member then connects the die to an external conductor. The die is
The movement is suppressed by a bridge clamp that presses the die against the substrate in the carrier. Once the die is fixed,
The carrier is used as a test fixture for performing a burn-in test on the die and various tests.

In a preferred embodiment, the bridge clamp presses against a rigid cover that biases the die against the die contact members on the substrate. In a preferred embodiment, the substrate with the die contacting member is located below the die on the side of the die opposite the cover and engages the carrier via a plurality of electrical terminal contacts on the carrier that engage contact pads on the substrate. Attached to. The contact pad is in electrical communication with the die contact member.

In a preferred embodiment, the bridge clamp engages the die carrier and allows the die carrier to be handled as a single package when the die is secured in the die carrier.

In accordance with the present invention, a plurality of semiconductor dies are inserted into the carrier tray and are positioned such that bond pads or similar contact points on the dies are aligned with the die contact members on the substrate. The die contacting member then connects the die to an external conductor. The die is restrained from moving by a bridge clamp that presses the die against the substrate in the carrier. When the die is fixed, the carrier is used as a test fixture for performing burn-in tests and various tests on the die.

The use of individually separated die support substrates allows for the replacement of substrates, thus allowing the manufacture of modules that can accommodate various dies. Accordingly, the various requirements required for burn-in tests and various types of test equipment to mechanically handle different die carriers to accommodate different types of dies are reduced or eliminated. Furthermore, edge contact, end contact and lead over chip (L
Different substrates can be designed to accommodate various die bond pad arrangements such as OC). Thus, a die carrier that can accommodate these different bond pad arrangements is possible.

Since the die carrier is for a burn-in test and various tests, it does not need to be filled excessively and is structurally robust. For this purpose, the carrier can be supplied from various test equipment, such as edge contacts, top or bottom contacts, plugs or DIs.
External connection such as P connection can be taken.

[0032] In one embodiment, the carrier tray supports a plurality of die carriers that individually support each die. The carrier tray then supports multiple carriers during burn-in and / or various tests to speed handling of multiple dies.

In yet another embodiment, a carrier tray is used in cooperation with a bridge clamp that holds the die in place. In this case, the die carrier fixture does not need to move with respect to the carrier tray or in a fixed arrangement with respect to the carrier tray, so that the connection of the die to the external connection terminal on the die carrier fixture is reduced. Increases stability. According to the present invention, since the tray supporting the bridge clamp can be used as a part of the burn-in test and the test fixture, the burn-in test and various tests can be easily performed. As with the use of a single carrier, the bridge clamp presses against a rigid cover that biases the die against the die contact members on the substrate.

[0034]

1 and 2 are a plan view and a side view of a semiconductor die carrier housing 11, respectively. The base 13 functions as a support for the die support substrate 15. Semiconductor die 21
Are in juxtaposition with the substrate 15.

As shown in detail in FIG. 3, the substrate 15 has a plurality of circuit wirings 27 printed thereon. The circuit wiring 27 extends from the bond pad contact 31 to the contact pad 33. Bond pad contact 3
1 is located on the substrate 15 and has a mirror image relationship with the arrangement of bond pads or contact pads on the die 21 (not shown in FIGS. 1 to 3). The die 21 has the bond pad contacts 31 arranged in this way,
Substrate 15 so that bond pad contacts 31 are aligned with bond pads or contact pads on die 21.
Align with

The contact pads 33 extend along one or more edges of the substrate 15. Substrate 15 facilitates connection of die 21 to terminal contact 41 on housing 11.

In FIGS. 1 and 2, the base 13 is
The substrate 15 is placed in the recess 43, and at this time, the terminal contact portion 41 extends across the substrate 15 and contacts the contact pad 33. As a result, ohmic contact is realized between the terminal contact portion 41 and the contact pad 33, and the circuit wiring 27
And an electrical circuit is formed with the bond pad contact 31. When the die 21 is placed in electrical contact with the bond pad contact 31, the terminal contact portion 41 is electrically connected to the die 21 via the bond pad on the die.

Since the bond pad contacts 31 are aligned on the substrate 15, the substrate must be designed to fit the particular layout of the bond pads on the die. This means that the substrate is typically specific to the particular design of the die and cannot be used with other designs of die that have different bond pad layouts.
This bond pad layout usually limits the use of a particular substrate to a single configuration or a single die family. Therefore, various substrates such as the substrate 45 shown in FIG. 4 that conform to the layout of the terminal contact portions 41 of the housing 11 can be made, and the mutually interchangeable substrates 15,
45 is possible to accommodate dies of various designs.

FIGS. 5A and 5B show details of the housing 11. The substrate 15 (or 45) is releasably held in the housing 11. In a preferred embodiment, the substrate 15 is such that the contact pad 33 is
5 and is fixed to the top by terminal contacts 41. Thus, a positive latch mechanism 50 is obtained, and the electrical contact function of the terminal contact portion 41 is linked to the holding function. The release sleeve 51 extends around the base 13 and engages with the lever extension 55 of each terminal contact portion 41 to bend the terminal contact portion 41 away from the substrate 41 as shown in FIG. The comb-shaped teeth 56 are supported by the base 13. Since the substrate can be engaged by other means to achieve electrical contact with the substrate 15,
What is shown in this figure is merely a preferred embodiment. As an example, if the substrate 15 is sufficiently thick,
May be held in the carrier base 13 by urging the edge.

The terminal contact part 41 has a connection extension part 59. The connection extension portion 59 enables contact with the outside of the terminal contact portion 41 and enables connection with the die 21 via the housing 11 for the purpose of a burn-in test or a test of the die 21. This connection extension 59 is also clearly visible in FIG. When held in the base 13, the board 15 is substantially integrated with the base 13 and can be connected to a circuit for a burn-in test and a test via a connection extension 59.

The connection extension 59 is open up and down so that it can be accessed from above and below the housing 11. In addition, the edge flange 65 allows contact at the end of the carrier by contacting an extension from the edge flange 65. FIG. 5 (a),
The downwardly extending pins 67 shown in (b) allow connection to a DIP socket. In a preferred embodiment, the downwardly extending pins 67 may be removed.

In FIG. 2, the die 21 is aligned with the substrate 15 and the base 13 is
Fixed to The bridge clamp 71 presses the cover 73. The cover 73 includes a rigid cover plate 75,
An elastically compressible elastomeric strip 77 is provided which acts as an elastic biasing member. When the cover plate 75 is fixed to the die cavity plate 13,
The elastomeric strip 77 presses the die 21 against the substrate 15, thereby causing the bond pad contact 3
An ohmic contact is realized between the bond pads of the die 21 which are aligned with the one. The elastomeric strip 77 is shown adjacent to the cover 73, but can be located anywhere in the carrier, such as under the substrate 15.

In FIG. 2, a bridge clamp 71 is provided above a cover 73, fixes the cover 73 to the base 13, and connects the die 21 to the bond pad contact 31.
Used to maintain ohmic contact with Then, by doing so, the die 21 is fixed in alignment with the bond pad contact 31. The cover 73 is a bridge clamp 7 which is clamped to the base 13 or a carrier tray (not shown) separated therefrom.
1 supported on the package.

The clamp 71 has a tab grip 81 that mate with a corresponding pair of slots 85 in the base 13. The spring 89 presses the cover 73 downward so as to press the cover 73 when the tab grip 81 is engaged with the slot 85 to urge the clamp 71 against the cover 73 and connect the die 21 to the terminal contact portion 41 in ohmic contact. Extend.

The clamp 71 is located on the top and the spring 8
9 has an opening 92. Then, the cover 73 is aligned with the opening 92 of the spring, and the clamp 71 and the cover 73 are aligned with the carrier tray 11 and the base 13.
Corresponding holes 91 that can evacuate die 21 during installation
Having. Die 21 and cover 73 are mechanically aligned with clamp 71 such that optical alignment does not disrupt mechanical alignment of clamp 71 with carrier tray 11. After the clamp 71 engages the carrier tray 11, the clamp 71 changes its position. However, this is a condition that the cover 73 does not change its position or move the die 21. The contact force provided by the clamp 71 is typically an aluminum oxide layer (not shown) formed over the aluminum bond pad.
Must be sufficient to penetrate the Since aluminum oxide has low electrical conductivity, penetration of the aluminum oxide layer is necessary for good electrical contact. For the contacts and bond pads described above, a force of about 80 g per contact point is sufficient. However, when silicon is used for the die supporting substrate 15, a force exceeding 80 g is expected to be applied. The optimal force for the contact depends on the material of the bond pad 27 and the bond pad contact 31 and the physical shape of the bond pad contact 31.

For the cover 73, a commercially available inexpensive metal material can be used. It has been found that a ceramic semiconductor package lid having a thickness of about 0.01 "can be sufficiently used as the cover 73 with a thickness of about 0.01". This lid works well if it has a common sense thickness, but in the embodiment shown in the figure, 0.045 ″ thick austenitic stainless steel is used. A lid made of other materials can be used as appropriate.

In order to electrically insulate the back side of the die 21 from the clamp 71 and to facilitate relative movement between the clamp 71 and the cover 73, Teflon ^™ (PTFE) is used as a coating material on the outside of the cover 73. When the clamp 71 and the cover 73 move relatively, the cover 7
3 can be prevented from moving with respect to the substrate 15, and as a result, the die 21 can be prevented from moving within the housing 11. Adhesive tape on one side or "Kapton
^TM "(EI Du Pont de Nemours & Co.)
Can be used in place of the PTFE coating material.

In a preferred embodiment, die 21 is secured to cover 73, and cover 73 is aligned with die cavity plate 13 using an optical alignment technique known as "flip chip bonding". The equipment for this is Research Devices.
(Piscataway, NJ). Alignment systems are commonly used for flip-chip die attachment, but can be used successfully in the present invention.

The holes 91 in the cover 73 help to secure the die 21 aligned with the cover 73 during flip chip bonding. When attaching the die 21 to the cover 73, a vacuum device (not shown) provided above the hole 91 is pulled up together with the vacuum device. At this time, the vacuum is sufficient to hold the cover 73 against the clamp 71. Die 21
Is then pulled up for vacuum while being aligned and in contact with the cover 73. The cover 73 and the die 21 are then lowered onto the substrate 15 to align the bond pads with the bond pad contacts 31. It has been found that the use of a vacuum eliminates the need to use an adhesive polymer to attach the die 21 to the cover 73.

When the die 21 is fixed to the cover 73 by vacuum or other means, the cover 73 is positioned above the substrate 15. The bond pad on the die 21 is
Align with upper bond pad contact 31. As a result, ohmic contact between the bond pad on the die 21 and the bond pad contact 31 on the substrate 15 is achieved. The contact force must be sufficient to allow the bond pad contact 31 to penetrate the aluminum oxide layer (not shown) formed on the normal aluminum bond pad.

An upwardly extending shroud (curtain) 95 is fixed to the base 13. The shroud 95 extends above the base 13 to a point higher than the substrate 15 and sufficiently protects the bridge clamp 71 from being inadvertently pressed during handling. As a result, the risk that the bridge clamp 71 moves with respect to the base 13 before the die 21 is released from the housing 11 is reduced. If such a movement occurs, a test result may be incorrect and the die 21 may be damaged. In a first embodiment, shroud 95 is surrounded by release sleeve 51. However, the present invention can be modified to place the release sleeve 51 in the shroud 95, as shown in FIGS. This is to prevent the substrate 15 from being accidentally released.

FIG. 6 shows an arrangement in which the carrier tray 103 holds a plurality of housings 105. Each housing 1
05 supports the substrate 15 and a plurality of terminal contacts 41
Is provided. The carrier tray 103 supports the housing 105 during the step of inserting the semiconductor integrated circuit die 21 into the housing 105 while aligning the semiconductor integrated circuit die 21 in the housing 105 and temporarily connecting the semiconductor integrated circuit die 21 to the terminal contact portion 41 so as to be electrically connected. It is formed as such.

The die support substrate 15 is preferably made of silicon. This is because there is an advantage that the coefficient of thermal expansion matches that of the die 21. 3 and 4, circuit wiring 27, bond pad contacts 31, and contact pads 33 are preferably located on the top surface of die support substrate 15. If silicon or other semiconductor material is used for die support substrate 15, circuit wiring 27 and bond pad contacts 31 may be formed using semiconductor circuit fabrication techniques such as those used to form wires and bond pads on semiconductor integrated circuit devices. And the bond pad 33 can be formed on the substrate 15.

The die support substrate 15 can be made of any of rigid, semi-rigid, semi-flexible or flexible materials. If the substrate material is silicon, the substrate can be made thin enough to be at least semi-flexible. However, in a preferred embodiment, a rigid substrate is used.

In a preferred embodiment, the die supporting substrate 1
5 is substantially rigid. This rigidity is such that when the die support substrate 15 is aligned with the die 21, the height of the bond pad contact 31 is substantially aligned with the bond pad 27 in the Z-axis direction. The stiffness is such that contact between bond pad 27 and bond pad contact 31 is achieved without significantly distorting die support substrate 15. Typically, such contact is achieved at the desired location by denting bond pad contact 31 or by using a Z-directional anisotropic conductive connection material (161 in FIG. 9). You.

The die supporting substrate 15 is made of sapphire (SO
It may be made of other materials such as S), silicon glass (SOG), or used in a semiconductor device manufacturing process using a semiconductor material other than silicon.

The bond pad 117 is typically recessed below the surface height 121 of the BPSG passivation layer 123, as can be seen from FIG.

Further, as shown in FIG.
A bump 133 is formed in the upper bond pad contact 31. The protrusion 133 cuts into the bond pad 117. The other portion of the bond pad contact 31 serves to limit the depth of the protrusion 133. This makes it possible to control the bite depth of the bond pad contact 31 by the physical size of the protrusion 133. As a result, the degree to which the bond pad contact 31 bites into the bond pad 117 is limited by itself. The raised portion 133 is the bond pad 1
The force required to dig into 17 is much less than the force required for the remainder of bond pad contact 31 to dig into bond pad 117.

As a result, the raised portion 133 causes a dent in the bond pad 117, and this dent is preferably made smaller than the thickness of the bond pad 117. The remaining portion of bond pad 117 located below bond pad contact 31 is slightly distorted, but will function well in subsequent assembly steps. In the subsequent assembly process, the bond pad 117 is handled as if there is no damage, so it is considered that the bond pad 117 is hardly damaged.

The ratio between the force allowed and the force required to dig into the bond pad depends on the material and size of each member, but a ratio of at least 2: 1 will be required. If the area of the raised portion of the bond pad contact 31 is large, a higher ratio of 4: 1, 10: 1 or more may be required. This ratio is a considerably large value such that a change in the flatness of the die supporting substrate 15 and the die 21 is expected.

When the die supporting substrate 15 is used, even if the die has a different bond pad pattern, the die supporting substrate fitted with the same base plate 13 has several changes 1
By adding 5 (FIG. 3) and 45 (FIG. 4), it can be aligned with an intermediate circuit wiring board 15 specially made for this die.

Since die support substrate 15 has bond pad contacts 31 thereon, the life of the bond pad contacts is not directly related to the life of the housing. Since the circuit wiring 27 is on the surface of the die supporting substrate 15, the formation of the raised contact portion on the bond pad contact 31 is facilitated.

Further, as shown in FIG.
5 may be formed from a ceramic material. When the bond pad contact 31 is formed on the substrate 15 by plating, the raised portion 141 is located at a contact point of the bond pad contact 31 with the bond pad 27. Ridge 14
1 is formed on the bond pad contact 31. When a ceramic intermediate substrate is used, the raised portion 141
It is formed by combining photo plating technology and doink technology. Other vapor deposition techniques can also be used instead of light plating, such as stencils, screen printing or direct writing. Dow ink technology
U.S. Patent No. 5,249,450 (Alan Wood,
"Hybrid forging probe heads" by David Hembree, Larry Cromar and Warren Farnworth. The die support substrate 15 and bond pad contacts 31 can be used repeatedly, and the bond pad contacts 31 are re-inked during use.

As shown in FIG. 9, in order to realize ohmic contact between the bond pad 167 and the bond pad contact 169 on the die 21, it is possible to use an internal wiring material 161 that is anisotropic in the Z-axis direction. It is. Therefore, ohmic contact between the bond pad 167 and the circuit wiring 27 can be realized without the contact 169 directly engaging with the bond pad 167. When the cover plate 75 is fixed to the die cavity plate 13, the cover 83 applies the anisotropic internal wiring material 161 in the Z direction to the die 21 and the substrate 15.
Energize against. The substrate plate 171 may be formed of a ceramic or semiconductor plate, and may be insulated from the circuit wiring 27.

The Z-axis anisotropic internal wiring material 161 is particularly useful when the bond pad 167 is recessed below the BPSG passivation layer on the die 21.
Another advantage of using the Z-axis anisotropic internal wiring material 161 is that it can be easily replaced if another die 21 is subsequently tested in the same package. Z-axis direction anisotropic internal wiring material 16
1 can be elastically deformed when forming ohmic contact with the bond pad 167, so that there is no need to frequently replace the intermediate plate 165 or do ink again.

The self-limiting contact such as the contact 31 shown in FIG.
This is useful for controlling the bite into one die bond pad 167. As in the case of directly contacting (contacting) the bond pad, the protruding portion causes the Z-axis direction anisotropic internal wiring material 161 to bite into the bond pad 167. At this time, the remaining portion of the bond pad contact 31 is indented by the protruding portion. Plays a role of limiting. For this reason, the bite depth of the bond pad contact 31 can be controlled by the physical size of the bond pad contact 31. That is, the bond pad contact 3
1 works in a self-limiting manner when biting into the bond pad 167. This is because the force required to cut the ridge into the bond pad 167 is reduced by the bond pad contact 31.
Is much less than the force required to dig into bond pad 167.

Once the die 21 is installed in the housing 11, it is subjected to burn-in tests and various tests in the same manner as burn-in tests and various tests for dies loaded in a single normal package.
This test includes a heat resistance test performed at least between 15 ° C and 125 ° C. Normally the test is from -10 ° C to 12
It is performed within a range of 5 ° C. Tests for semiconductor components for military or adverse conditions are conducted at temperatures from -55 ° C to 150 ° C.
It is performed in the range.

It will be appreciated that the invention is capable of other embodiments than those described herein. For example, the terminal contact portion 41
Can be attached to the release sleeve 51 such that relative movement between the release sleeve 51 and the base plate 13 causes a desired deflection of the terminal contacts. The holding of the substrate 15 may be performed by means other than the terminal contact portion 41 on the condition that the electronic wiring of the circuit wiring 27 to the external circuit is maintained. The scope of the present invention is defined solely by the appended claims.

[0069]

As described above, according to the present invention,
The use of individually separated die support substrates allows the substrates to be replaced and allows the manufacture of modules that can accommodate various dies. And since different substrates can be designed, a die carrier that can accept these different bond pad arrangements is possible. Further, since the die carrier is used for the burn-in test and various tests, it is not necessary to fill the die carrier excessively, and it is structurally robust. For this purpose, the carrier can be supplied from various test devices, such as edge contacts, top or bottom contacts, and plugs or D contacts.
External connection such as IP connection can be established. In one aspect of the invention, the carrier tray supports a plurality of die carriers to individually support each die, and then supports the plurality of carriers during burn-in and / or various tests to handle multiple die. To be quick. In yet another aspect, the use of a carrier tray in cooperation with a bridge clamp that holds the die in place increases the stability of the connection of the die to external connection terminals on the die carrier fixture. Further according to the present invention, the tray supporting the bridge clamp can be used as part of the burn-in test and test fixture,
Burn-in test and various tests can be easily performed.

[Brief description of the drawings]

FIG. 1 is a plan view of a carrier housing for a semiconductor die according to one embodiment of the present invention.

FIG. 2 is a side view of a carrier housing for a semiconductor die according to one embodiment of the present invention.

FIG. 3 is a plan view of a die support substrate used in the carrier housing of FIGS. 1 and 2;

FIG. 4 is a plan view of a substrate used in the carrier housing of FIGS. 1 and 2, according to an aspect different from the substrate of FIG. 3;

5 (a) and 5 (b) are side sectional views showing an engaged state and a released state of a latch mechanism for holding the substrate of FIG. 3 or FIG. 4, respectively.

FIG. 6 is a plan view showing a carrier tray on which a plurality of housings are placed.

FIG. 7 is a cross-sectional view showing details of a bond pad contact provided with a ridge that limits the depth of penetration into the bond pad.

FIG. 8 is a cross-sectional view showing details of a bond pad contact with a ridge.

FIG. 9 is a cross-sectional view illustrating the use of an anisotropic interconnect material in the Z-direction used to achieve ohmic contact between a die and a contact pad on a die support substrate.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Carrier housing 15 Die support board 21 Semiconductor die 27 Circuit wiring 31 Contact point 41 First electric terminal set 50 Latch mechanism 65 Second electric terminal set 117 Bond pad

 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-3-102848 (JP, A) JP-A-62-160676 (JP, A) JP-A-5-218153 (JP, A) JP-A-5-218153 206227 (JP, A) JP-A-5-340996 (JP, A) JP-A-3-131048 (JP, A) JP-A-2-27578 (JP, U) JP-A-62-167176 (JP, U)

Claims (21)

(57) [Claims] 1. An apparatus for testing a bare semiconductor die, comprising : a) a die support substrate for supporting the semiconductor die;
The die support substrate is electrically connected to a contact point on the semiconductor die.
A plurality of contacts which are electrically connected to each other, and
The semiconductor die having circuit wiring electrically connected to a path,
Die support for providing electrical continuity between the test circuit and the test circuit
A plate ; b) a base having a recess for holding the die support substrate; and c) a latch mechanism mounted on the base for releasably securing the die support substrate to the base.
A test apparatus comprising: a latch mechanism having terminal contacts formed to contact a die support substrate to establish an electrical connection between circuit wiring on the die support substrate and a test circuit. 2. The apparatus according to claim 1, wherein the circuit wiring is electrically connected to a contact pad formed on the die supporting substrate, and a terminal contact of the latch mechanism is engaged with the contact pad. 3. A release member is mounted on the base, the release member being movable relative to the die support substrate, the terminal contact is formed as a latch that can be released by movement of the release member, The apparatus of claim 2, wherein the relative movement disengages the terminal contacts from the die support substrate. 4. The die support substrate further comprises a ridge on each of the contacts and sized to dig into a corresponding contact point of the die, the top surface of the contact having a digging depth of the ridge. 2. The apparatus of claim 1, wherein said contact is limited to achieve electrical continuity at said contacts. 5. The apparatus of claim 1, wherein said plurality of contacts are formed on a die support substrate using semiconductor circuit manufacturing techniques. 6. The apparatus of claim 1, wherein the die support substrate is formed from a silicon material, and wherein the circuit wiring is formed on the silicon material using a semiconductor circuit manufacturing technique. 7. The device further comprises a pad between the die and a plurality of contacts, the pad being conductive in the Z direction, which is the normal direction of the plane, in a direction parallel to the pad surface.
2. The device of claim 1, wherein the device is insulating. 8. The apparatus of claim 1, further comprising a clamp member removably mounted on the base and biasing the semiconductor die against a die support substrate with a predetermined force. 9. An apparatus for testing a semiconductor die prior to loading a package , comprising: a) a base; b) mounted within the base to support the semiconductor die and to provide an electrical connection between the die and a test circuit. A die support substrate for providing electrical continuity, the die support substrate including a contact formed to bite into a contact point on the die, and a circuit wiring electrically connected to the contact; c) attached to the base; A latch mechanism for releasably securing the die support substrate to the base,
A latch mechanism having a movable terminal contact configured to contact a die support substrate to establish an electrical connection between the circuit trace and a test circuit; and d) removably attached to the base. A test apparatus comprising: a clamp for urging a die against a die supporting substrate and applying a predetermined force to the semiconductor die so that a contact on the die supporting substrate bites into a contact portion of the die by a predetermined depth. 10. The device of claim 9, further comprising a contact pad formed on the die support substrate and electrically connected to the circuit wiring for contacting the terminal contact. 11. contacts on the die supporting substrate is provided with a raised portion of such magnitude bite into the contact points of the die, the
10. The device of claim 9, wherein the top surface of the contact limits the depth of the ridge. 12. The apparatus further comprises a cover between the clamp and the die, the cover allowing the die to be attached to the cover for loading the die into the apparatus utilizing a vacuum. The device of claim 9 comprising: Wherein said clamp is for biasing said die against the die support substrate, according to claim 12, further comprising a spool <br/> ring in contact with the cover. 14. The apparatus of claim 9, wherein said die support substrate is formed from silicon using semiconductor circuit manufacturing techniques. 15. The apparatus of claim 9, wherein said die support substrate is formed from a ceramic material and said contacts are formed by a dow ink technique. 16. The apparatus further comprises a pad between the die and a die support substrate, the pad being conductive in a Z direction which is a normal direction of the plane, and being parallel to the pad surface.
10. The device of claim 9, wherein the device is directionally insulative. 17. The apparatus of claim 9, wherein said base has a recess for holding a die support substrate. 18. An apparatus for testing a semiconductor die prior to package loading , comprising: a) a base having a recess; and b) mounted in the recess to support the semiconductor die and between the die and a test circuit. a die supporting substrate to provide electrical continuity to bite into the contact point on the die
A die support substrate having a ridge of such size and a remaining portion for limiting the depth of this digging, and a die support substrate having circuit traces electrically conductive with the contact; c) a die support attached to the base; A latch mechanism for releasably securing a substrate in the recess, wherein the latch mechanism is configured to contact a die support substrate to establish an electrical connection between the circuit trace and a test circuit. A latch mechanism having terminal contacts; d) a cover removably formed on the die so as to place the die on the die support substrate; e) a releasably mounted die on the die support substrate. Test fixture comprising a spring including a spring for applying a predetermined force to the semiconductor die so as to urge the contact on the die support substrate into the contact point of the die to a predetermined depth. . 19. The cover having an opening for attaching the die to the cover using a vacuum.
The described device. 20. The apparatus of claim 18, wherein said contacts are formed as pointed bumps. 21. The apparatus of claim 18, wherein the device further comprises a release member mounted on the base to move the terminal contact out of contact with the die support substrate and to move the latch mechanism. apparatus.