JP2704342B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a lead frame,
The present invention relates to a semiconductor device having a power semiconductor element and a control element and a method for manufacturing the same.

[0002]

2. Description of the Related Art Heretofore, there have been the following power semiconductor devices having a composite element in which a semiconductor control element including an integrated circuit (hereinafter, referred to as a control element) and a power semiconductor element are combined.

(Conventional Example 1) As shown in FIGS. 4 and 5, a ribbon-shaped solder 5 cut on a heated lead frame 1 is adhered, and a power semiconductor element 2 is mounted thereon for electrical connection. .

Thereafter, an insulating paste 4 is applied to the lead frame 1 adjacent to the power semiconductor element 2, and the control element 3 is mounted thereon and cured at a high temperature.

(Conventional example 2) As shown in FIGS. 6 and 7, after the power semiconductor element 2 is mounted with the solder 5, an insulating film 6 having an adhesive layer 8a on one side is adhered to the lead frame 1.
An insulating paste 4 is applied thereon and the control element 3 is bonded.

[0006]

In the conventional example 1, since the distance between the lead frame 1 and the control element 3 is short, sufficient insulation cannot be obtained between them.

In the conventional example 2, since the distance between the lead frame 1 and the control element 3 is equal to the thickness of the insulating film 6, a high insulating property is obtained. The number of attaching steps increases.

Further, depending on the amount of the insulating paste 4, the insulating paste 4 may fall from the side surface of the control element 3 to the upper wire bonding area, or the control element 3 may be inclined, and the wire may not be hit. Yield decreases.

Further, since the thickness of the insulating paste 4 is not constant, when the control element 3 has an overheat protection circuit or the like, heat conduction is not constant, and the overheat protection temperature fluctuates.

In view of the above problems, an object of the present invention is to provide a semiconductor device capable of obtaining sufficient insulation, suppressing the number of manufacturing steps, improving the quality and improving the yield, and a method of manufacturing the same.

[0011]

According to a first aspect of the present invention, a power semiconductor element 2 is mounted on a lead frame 1 via a solder 5 as shown in FIGS. In a semiconductor device having the control element 3 mounted thereon, the insulating material 7 has a three-layer structure including an insulating film 6 and resin adhesive layers 8a and 8b formed on both surfaces of the insulating film 6. The adhesive layers 8a and 8b are configured to be plasticized by heat at the time of soldering the power semiconductor element 2.

According to a second aspect of the present invention, there is provided a power semiconductor element on a lead frame via a solder.
In the method of manufacturing a semiconductor device in which the control element 3 is mounted via the insulating material 7, the insulating film 6 is used as the insulating material 7 and a thermoplastic resin adhesive layer formed on both surfaces of the insulating film 6. 8a and 8b, a three-layer structure is used, and mounting of the control element 3 by the insulating material 7 is performed in the same step as soldering when mounting the power semiconductor element 2.

[0013]

When the insulating material 7 is attached to the heated lead frame 1 in the above means for solving the problems, the resin adhesive layers 8a and 8b on both surfaces of the insulating material 7 are melted by heat. The control element 3 is mounted on the melted resin adhesive layers 8a and 8b, cooled to room temperature, cured, and adhered.

Then, since both surfaces of the insulating material 7 are thermoplastic resins 8a and 8b having high heat resistance, the process can be performed in the same process as the solder 5.

[0015]

1 is a sectional view of a power semiconductor device according to an embodiment of the present invention, FIG. 2 is a plan view of the power semiconductor device, and FIG. 3 is a sectional view of an insulating tape.

As shown in the figure, the semiconductor device of the present embodiment has a power semiconductor element 2 mounted on a lead frame 1 via solder 5 and a control element mounted on an insulating material 7 (resin tape). 3 is provided.

As shown in FIG. 2, the lead frame 1 is formed by stamping a single metal plate to form a desired wiring pattern. In FIG. 2, 1a is a cradle, 1b is a tie bar, 1c is a sprocket hole for supporting the lead frame 1 at the time of transportation or the like, and 1d is a pin hole for mounting an external mounting board.

As shown in FIG. 1, the insulating material 7 has a three-layer structure comprising an insulating film 6 made of a heat-resistant resin serving as a base and thermoplastic resin adhesive layers 8a and 8b formed on both surfaces of the insulating film 6. Before supply, the tape is wound into a tape shape and cut to a required size at the time of supply.

The semiconductor device having the above configuration is manufactured as follows.

First, the lead frame 1 is heated to a temperature at which the solder 5 and the resin adhesive layers 8a and 8b melt.

Next, the solder 5 and the insulating material 7 are cut in accordance with the sizes of the corresponding elements 2 and 3, and the lead frame 1 is cut.
Attach it to the specified place above.

Then, after melting the resin adhesive layers 8a and 8b on both sides of the solder 5 and the insulating material 7, the power semiconductor element 2
The control element 3 is mounted on the solder 5 and the insulating material 7, respectively.

Thereafter, the lead frame 1 is cooled to room temperature, and the solder 5 and the resin adhesive layers 8a and 8b are cured and bonded.

Thus, the solder 5 and the insulating material 7 can be bonded in the same step.

Moreover, since the insulating material 7 and the resin thickness are constant, the insulating distance between the lead frame 1 and the control element 3 is constant.

Further, it is not necessary to consider that the resin adhesive layers 8a and 8b go up to the bonding area above the control element 3.

It should be noted that the present invention is not limited to the above-described embodiment, and it goes without saying that many modifications and changes can be made to the above-described embodiment within the scope of the present invention.

[0028]

As is apparent from the above description, according to the present invention, the insulating material has a three-layer structure composed of the insulating film and the thermoplastic resin adhesive layers on both surfaces thereof, so that the power semiconductor device and the control element can be used. Can be bonded in the same process, so that the process can be shortened.

Further, since the thickness of the insulating material is constant, it is possible to prevent the wire bonding from being disabled due to the inclination of the control element or the rising of the resin, if the thickness is properly set.

Further, there is an excellent effect that a semiconductor device having high reliability can be provided without the variation in the heating protection temperature due to the variation in the distance between the control element and the lead frame.

[Brief description of the drawings]

FIG. 1 is a sectional view of a power semiconductor device according to an embodiment of the present invention.

FIG. 2 is a plan view of a power semiconductor device.

FIG. 3 is a sectional view of an insulating tape.

FIG. 4 is a cross-sectional view of a power semiconductor device of Conventional Example 1.

FIG. 5 is a plan view of a power semiconductor device of Conventional Example 1.

FIG. 6 is a cross-sectional view of a power semiconductor device of Conventional Example 2.

FIG. 7 is a plan view of a power semiconductor device of Conventional Example 2.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Lead frame 2 Power semiconductor device 3 Control element 4 Insulating paste 5 Solder 6 Insulating film 7 Insulating material 8 Thermoplastic resin adhesive layer

Claims (2)

(57) [Claims] 1. A semiconductor device in which a power semiconductor element is mounted on a lead frame via solder and a control element is mounted via an insulating material, wherein the insulating material includes an insulating film and both surfaces of the insulating film. And a resin adhesive layer formed on the power semiconductor element, the resin adhesive layer being plasticized by heat during soldering of the power semiconductor element. 2. A method of manufacturing a semiconductor device in which a power semiconductor element is mounted on a lead frame via solder and a control element is mounted via an insulating material, wherein the insulating material is
Using a three-layer structure of an insulating film and a thermoplastic resin adhesive layer formed on both sides of the insulating film, mounting the control element using the insulating material is the same as soldering when mounting the power semiconductor element. A method of manufacturing a semiconductor device, which is performed in a process.