JP2695960B2 - Sample processing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION TECHNICAL FIELD OF THE INVENTION

The present invention relates to a sample processing method and apparatus, and more particularly to a sample processing method and apparatus suitable for processing a sample such as a semiconductor element substrate, which is required to be subjected to an anticorrosion treatment together with an etching treatment.

[Prior art]

A sample such as a semiconductor element substrate, for example, aluminum (A
l) In etching using a halogen gas plasma of a sample having a film, an Al alloy film or a multilayer structure film using these and a barrier metal, corrosion after exposure to the atmosphere after the etching process becomes a problem, and In these samples, anticorrosion treatment is required together with etching treatment. The following technology has been proposed based on an idea corresponding to such a request. For example, Japanese Patent Publication No. 62-30268 discloses an Al-silicon (S
i) After dry etching of an Al alloy film such as Al-copper (Cu) or Al-Si-Cu, a dry etching post-treatment in which a mixed gas plasma treatment of fluorocarbon and oxygen is performed without being taken out of the container. The technology is described. Also, for example, Japanese Patent Publication No. 58-12343 discloses that after etching of an Al or Al alloy film etched using chlorinated plasma, the etched film is exposed to fluorinated plasma. The technique to be performed is described.

[Problems to be solved by the invention]

However, in the above-described conventional technique, it is difficult to remove the corrosive deposits attached to the side wall of the pattern generated by the etching process on the sample. Further, in such a conventional technique, a substitution reaction of only a surface layer of a corrosive deposit attached to a pattern side wall portion (for example, AlCl ₃ which is a component of the corrosive deposit and a plasma component of a post-treatment gas). For example, substitution with Al ₂ O ₃ by reaction with oxygen) occurs, and such a substitution reaction on a corrosive deposit does not proceed. On the other hand, when such a sample is exposed to the atmosphere, since corrosive deposits are not dense, moisture in the atmosphere penetrates into the corrosive deposits and reacts with the permeated moisture and the corrosive deposit components. Produces a corrosive component (eg, chlorine), and the sample is corroded by the corrosive component. As described above, in the above-described conventional technique, the corrosion resistance of the sample after the etching process is insufficient. In particular, in recent multilayer films of Al and other materials or Al alloy films containing Cu, the so-called battery action (Al becomes an anode) causes corrosion, the degree of the corrosion is accelerated, and the corrosion protection Are more pronounced. Therefore, in such a sample, for example,
As described in JP-A-61-133388, after the etching treatment,
Corrosion prevention treatment by a wet method is usually performed.
In the wet-type anticorrosion treatment, corrosive deposits adhering to the pattern side wall of the sample can be removed, and the anticorrosion in the air after the etching treatment can be further improved. In the above-described conventional technique in which a sample is etched and then subjected to a wet-type anticorrosion treatment, if water remains after the wet-type anticorrosion treatment, the residual water and the sample remaining after the wet-type anticorrosion treatment, for example, chlorine Chlorine, which is a corrosion component due to the reaction with chlorine in the atmosphere or chlorine (HC
l) is produced, which corrodes the sample after the anticorrosion treatment in the wet mode. For this reason, after the anticorrosion treatment by the wet method, a drying treatment is inevitably required. Therefore, such a conventional technique has the following problems. (1) The time required to complete the anticorrosion treatment of the sample after the etching treatment increases (at least the anticorrosion treatment time in the wet method + the drying treatment time), and the throughput decreases. (2) A configuration in which the anticorrosion treatment of the sample after the etching treatment is performed using a wet-type anticorrosion treatment apparatus and a separate drying treatment apparatus (in this case, means for transporting the sample between the apparatuses) ), The cost of the device increases and the floor space occupied by the device increases. (3) A device for collecting and treating the waste liquid from the anticorrosion treatment in a wet system is required, and the structure of the device is complicated, and the price is increased. SUMMARY OF THE INVENTION It is an object of the present invention to provide a sample processing method and apparatus capable of improving the throughput in processing a sample that requires corrosion prevention as well as etching.

[Means for Solving the Problems]

An object of the present invention is to provide a sample processing method for processing a sample on which a laminated metal film having an Al alloy film and a metal film is formed, wherein the step of converting a chlorine-containing gas into a plasma, and using the plasma of the chlorine-containing gas. A step of etching the sample, a step of converting a chlorine-containing anticorrosive gas into a plasma, and a step of removing chloride adhered to the sample during the etching with a bias power lower than that of the etching using the plasma of the anticorrosive gas. And a step of removing the resist attached to the sample after the anti-corrosion plasma processing step. Due to the execution of the anticorrosion treatment, a reaction product or an etching gas component or the like generated in the etching treatment of the sample and having a corrosive property in the air, such as an etching gas component, is referred to as an anticorrosion gas. The processing of the sample using the plasma is sufficient from the sample without generating new deposits,
And it is easily removed. Therefore, the wet anticorrosion treatment is not required, and the time required to complete the anticorrosion treatment of the sample is greatly reduced.

BEST MODE FOR CARRYING OUT THE INVENTION

An embodiment of the present invention will be described below with reference to FIGS. In FIG. 1, two openings 12 and 13 having a predetermined interval and diameter are provided.
Are formed on the buffer chamber 10, in this case, on the top wall 11. Means for depressurizing and exhausting the buffer chamber 10 (not shown)
However, it is provided in the buffer room 10. A discharge tube 20 is provided airtightly on the top wall 11 of the buffer chamber 10 corresponding to the opening 12. In this case, the shape of the discharge tube 20 is substantially hemispherical. The waveguide 30 is disposed outside the discharge tube 20 and inside the discharge tube 20.
It is arranged including. The axis of the waveguide 30 is aligned with that of the discharge tube 20. Waveguide 30 and magnetron 40
And are connected by a waveguide 31. Magnetic field generating means, for example, a solenoid coil 50, outside the waveguide 30, and
It is mounted around the waveguide 30 substantially corresponding to the discharge tube 20. The solenoid coil 50 is electrically connected to a power supply (not shown) through a power supply adjusting means (not shown). The sample stage shaft 60 has an upper part protruding into the buffer chamber 10 and the discharge tube 20, and a lower part protruding outside the buffer chamber 10 and is hermetically inserted into the bottom wall 14 of the buffer chamber 10. . Sample table
61 is provided substantially horizontally at the upper end of the sample stage shaft 60. The planar shape and size of the sample table 61 are smaller than the opening 12 and larger than the sample 70. The sample stage 61 has a sample setting surface on its surface, that is, a surface corresponding to the top of the discharge tube 20. The axes of the sample stage axes 60 and 61 are
It is almost the same as that of 20. For example, a metal bellows 80 is provided around the sample stage axis 60 in the buffer chamber 10. The lower end of the bellows 80 is the bottom wall of the buffer chamber 10.
It is provided on the 14 inner surface. A flange 81 is provided at the upper end of the bellows 80. The seal ring (not shown)
It is provided on the surface of the flange 81 corresponding to the inner surface of the top wall 11 of the buffer chamber 10. Further, means (not shown) for driving the bellows 80 to expand and contract is provided. The bellows 80 is extended by the telescopic drive means, whereby the flange 81 is
When pressed against the inner surface of the top wall 11 of the buffer chamber 10 via a seal ring, a space 90 is formed in the buffer chamber 10 that is airtightly closed. An exhaust nozzle 100 is formed on the bottom wall 14 of the buffer chamber 10 in communication with the space 90. Exhaust pipe (not shown) connected to a vacuum exhaust device (not shown)
Are connected to the exhaust nozzle 100. An on-off valve, an exhaust resistance variable valve, and the like (not shown) are provided in the exhaust pipe.
A gas introduction passage 110 is formed in the top wall 11 of the buffer chamber 10 in communication with the space 90. A gas conduit 112 connected to the etching gas source 111 is connected to the gas introduction channel 110. An on-off valve, a gas flow control device, and the like (not shown) are provided in the gas conduit 112. Further, in this case, the gas conduit 114 connected to the anticorrosive gas source 113 is connected to the gas conduit 112 on the downstream side such as an on-off valve or a gas flow control device provided in the gas conduit 112. The gas conduit 114 is provided with an on-off valve, a gas flow control device, and the like (not shown). In addition, the gas conduit 114 may be directly connected to the gas introduction channel 110. A power supply for bias application, for example, a high-frequency power supply 120 is provided. The sample stage 61 is electrically connected to the high frequency power supply 120 via the sample stage shaft 60. The buffer chamber 10 and the high frequency power supply 120 are each grounded. The temperature of the sample 70 can be controlled to a predetermined temperature via the sample table 61. In FIG. 1, the discharge tube 21 corresponds to the opening 13 and the buffer chamber
It is airtightly provided on the top wall 11 of 10. In this case, the shape of the discharge tube 21 is a substantially cylindrical shape having a substantially flat closed end on one side and an open end on the other side. The waveguide 32 is disposed outside the discharge tube 21 and including the discharge tube 21 therein.
The axis of the waveguide 32 is substantially aligned with that of the discharge tube 21. The sample stage shaft 62 is provided upright on the inner surface of the bottom wall of the buffer chamber 10. The sample stage 63 is provided substantially horizontally on the upper end of the sample stage shaft 62. The plane shape and size of the sample stage 63 depends on the opening.
13 and larger than the sample 70.
The sample stage 63 has a sample setting surface on its surface, that is, a surface facing the inner surface of the closed end of the discharge tube 21. Sample stage shaft 62,
The axis of the sample stage 63 is substantially aligned with that of the discharge tube 21. For example, a metal bellows 82 is provided around the sample stage axis 62 in the buffer chamber 10. The lower end of the bellows 82 is provided on the inner surface of the bottom wall 14 of the buffer chamber 10. A flange 83 is provided at the upper end of the bellows 82. A seal ring (not shown) is provided on the surface of the flange 83 corresponding to the inner surface of the top wall 11 of the buffer chamber 10. Further, means (not shown) for driving the bellows 82 to expand and contract is provided. Bellows 82 is stretched by the telescopic drive means,
Thus, a space 91 is formed in a state where the flange 83 is pressed against the inner surface of the top wall 11 of the buffer chamber 10 via the seal ring and is airtightly shut off from the inside of the buffer chamber 10. The exhaust nozzle 101 is connected to the space 91 and is connected to the bottom wall 14 of the buffer chamber 10.
Is formed. An exhaust pipe (not shown) connected to a reduced-pressure exhaust device (not shown) is connected to the exhaust nozzle 101. An on-off valve, an exhaust resistance variable valve, and the like (not shown) are provided in the exhaust pipe. A gas introduction passage 115 is formed in the top wall 11 of the buffer chamber 10 in communication with the space 91. A gas conduit 117 connected to a gas source 116 of a post-treatment gas is connected to the gas introduction path 115. An on-off valve, a gas flow control device, and the like (not shown) are provided in the gas conduit 117.
In FIG. 1, reference numeral 130 denotes a reflection end. In FIG. 1, a means for carrying the sample 70 into the buffer chamber 10 and passing it to the sample setting surface of the sample table 61,
Means for transporting the sample 70 from the sample stage 63 to the sample stage 63 through the buffer chamber 10, and receiving the sample 70 from the sample stage 63.
Means (not shown) for carrying out to the outside are provided. In FIG. 1, the bellows 80 and 82 are contracted by the operation of the respective expansion and contraction driving means. In this state, the evacuation means is operated. This allows the buffer chamber
The interior of 10 and the interior of the discharge tubes 20 and 21 are evacuated to a predetermined pressure. Thereafter, in this case, one sample 70,
The loaded sample 70 is placed on the sample setting surface of the sample stage 61 in an upward posture of the surface to be processed. Thereafter, a space 90 is formed. A predetermined etching gas is introduced into the space 90 at a predetermined flow rate from the etching gas source 111.
In this case, the space 90 of the anticorrosive gas from the
The introduction to has been suspended. Part of the etching gas in the space 90 is exhausted through the exhaust nozzle 100, whereby the pressure in the space 90 is adjusted to a predetermined etching processing pressure. On the other hand, a microwave electric field is generated by the operation of the magnetron 40, and a magnetic field is generated by the solenoid coil 50.
Generated by the operation of. The etching gas in the inner portion of the discharge tube 20 in the space 90 is turned into plasma by the synergistic action of the microwave electric field and the magnetic field. The processed surface of the sample 70 set on the sample setting surface of the sample stage 61 is etched using the plasma. During this etching process, a high-frequency bias is applied to the sample 70, and the temperature of the sample 70 is controlled to a predetermined temperature via the sample stage 61. At the end of the etching process, the introduction of the etching gas is stopped, and at the same time, the operations of the magnetron 40, the solenoid coil 50, and the high-frequency power supply 120 are stopped. Thereafter, the space 90 is evacuated to a predetermined pressure again. Further, the on-off valve provided in the gas conduit 114 is opened. That is, a predetermined anticorrosion gas is introduced at a predetermined flow rate from the anticorrosion gas source 113 into the space 90 evacuated to a predetermined pressure in place of the etching gas. Part of the anticorrosion gas in the space 90 is exhausted through the exhaust nozzle 100, whereby the pressure in the space 90 is adjusted to a predetermined anticorrosion processing pressure. On the other hand, a microwave electric field is generated by the operation of the magnetron 40, and a magnetic field is generated by the solenoid coil 50.
Generated by the operation of. The anticorrosion gas in the inner part of the discharge tube 20 in the space 90 is turned into plasma by the synergistic action of the microwave electric field and the magnetic field. The etched sample 70 set on the sample setting surface of the sample stage 61 is subjected to anticorrosion processing using the plasma. That is, the deposits generated by the plasma etching of the sample 70 are removed from the sample 70. At the time of such anticorrosion treatment, the etched sample
A high frequency bias is applied to 70, and the temperature of the etched sample 70 is controlled to a predetermined temperature via the sample stage 61. When the anticorrosion process is completed, the introduction of the anticorrosion gas is stopped, and at the same time, the operations of the magnetron 40, the solenoid coil 50, and the high-frequency power supply 120 are stopped. Thereafter, the bellows 80 is contracted. Thereafter, in this state, the anticorrosion-treated sample 70 is conveyed from the sample stage 61 to the sample stage 63 via the inside of the buffer chamber 10 and is installed on the sample installation surface of the sample stage 63 in an upward posture on the surface to be processed. Thereafter, a space 91 is formed. Post-treatment gas source 116
Then, a predetermined post-processing gas, for example, a resist ashing gas passivation gas is introduced into the space 91 at a predetermined flow rate. A part of the post-processing gas in the space 91 is exhausted through the exhaust nozzle 101, whereby the pressure in the space 91 is adjusted to a predetermined post-processing pressure. On the other hand, a microwave electric field is generated by the operation of the magnetron 41. space
The post-processing gas in the inner portion of the discharge tube 21 is turned into plasma by the action of the microwave electric field. The sample 70 set on the sample setting surface of the sample stage 63 is subjected to post-processing such as resist ashing and passivation using the plasma. At the end of such post-processing, the introduction of the post-processing gas is stopped, and the magnetron
The operation of 41 is stopped. Also, the bellows 82 is contracted. In this state, the processed sample 70 is received from the sample stage 63 and carried out of the buffer chamber 10. The above processing operations are sequentially performed, and the sample
Each piece is processed continuously. As the sample 70, for example, the one shown in FIG. 2 is used. In FIG. 2, the sample 70 is made of Si which is a base oxide film.
There is a TiN film 72 as a barrier metal on the oxide film 71, an Al-Cu-Si alloy film 73 on the TiN film 72, a cap metal 74 on the TiN film 72, and a resist on the cap metal 74. 75 are provided. Here, the barrier metal is used to prevent the deposition of Si in a contact portion electrically connected between the Si oxide film 71 and the Ai-Cu-Si alloy film 73. It is also used to prevent disconnection of wiring due to stress migration. As the barrier metal, in addition to the TiN film 72, for example, MoSi ₂ , TiW, TiW / T
i, TiN / Ti, Wsi ₂ , W-based high melting point metal films or alloy films thereof are used. The cap metal 74 is used to prevent disconnection of wiring due to electromigration and stress migration, similar to the barrier metal, and is also used to prevent halation during exposure of the resist film. Is done. As the cap metal, for example, TiN, MoSi ₂ , TiW, Poly-Si, WSi ₂
Is used. In this case, a halogen gas,
For example, a gas containing chlorine, for example, a mixed gas of BCl ₃ + Cl ₂ is used. In FIG. 1, the BCl ₃ + Cl ₂ mixed gas in the inner part of the space 90 during the discharge 20 is turned into plasma by the synergistic action of the microwave electric field and the magnetic field. The sample 70 shown in FIG. 2 is etched using the plasma.
The etching conditions in this case are as follows. Etching gas introduction flow rate: BCl ₃ : 40 cc / min. Cl ₂ : 60 cc / min. Etching processing pressure: 10 mTorr Microwave power: 700 W Magnetic field strength:・ ・ ・ ・ ・ ・ 875Gauss High frequency bias power ・ ・ ・ ・ ・ ・ ・ 70W Temperature of sample ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ 40 ℃ Fig.3 shows the vertical cross section of the sample 70 etched under these conditions. Show. As shown in FIG. 3, deposits (chlorides such as reaction products and etching gas components) 140 adhere to the side walls and the surface of the resist 75. Such an etched sample 70 was subjected to a plasma anticorrosion treatment using chlorine gas (Cl ₂ ) as an anticorrosion gas. That is, in FIG.
Cl _{2 in} the inner portion of the discharge tube 20 is turned into plasma by the synergistic action of the microwave electric field and the magnetic field. The etched sample 70 shown in FIG. 3 is subjected to anticorrosion treatment using the plasma. The anticorrosion treatment conditions in this case are as follows. Corrosion protection gas introduction flow rate: Cl ₂ : 90 cc / min. Corrosion protection processing pressure: 10 mTorr Microwave power: 700 W Magnetic field strength: ···· 875 Gauss High frequency bias power ··· 40 W Discharge (anticorrosion treatment) time ··· 20 sec. Temperature of sample 70 ····· 40 ° C That is, sample 70 after etching The deposit 140 containing chlorine is removed from the etched sample 70 by reacting chlorine ions and chlorine radicals in the Cl ₂ gas plasma with the deposit 140. By such anticorrosion treatment,
No new deposits are formed on the etched sample 70. If the discharge (corrosion prevention treatment) time is set to a short time of 20 seconds or less, the removal of the deposit 140 from the etched sample 70 becomes insufficient.
The time required is at least about 20 seconds. However, if the discharge (anticorrosion treatment) time is too long, the wiring film itself is etched, which causes a disadvantage that the wiring becomes thinner than a predetermined pattern. Such an anticorrosion-treated sample 70 is carried out of the buffer chamber 10 after completion of the post-processing. in this case,
In the post-process, the resist ashing process and the passivation process are performed simultaneously. In other words, oxygen gas or a gas containing oxygen is used as the post-processing gas, and the resist 75 is removed from the anticorrosion-treated sample 70 by using the plasma of the post-processing gas, and the resist 75 is passivated on the pattern surface. A film is formed. Thereafter, such a sample 70 was left in the air.
No corrosion of 70 was observed. Such an effect is further improved by the effect of the passivation film formed on the pattern surface by performing the passivation process in addition to the anticorrosion process. In addition, at least 90% chlorine gas
The same effect was obtained by using the contained mixed gas (the remaining gas was a gas other than the inert gas). Here, as a gas other than the inert gas and added to the chlorine gas, a gas having no deposition property, for example, SF ₆ , Br ₂ or the like is used. For example, a sample is a base oxide film.
A TiW film is used as a barrier metal on the Si oxide film, and an Al-Cu alloy film is formed on the TiW film, and a layered film having a resist on the Al-Cu alloy film is used. When the sample etched under the same conditions as the above was subjected to anticorrosion treatment using a mixed gas of Cl ₂ + SF ₆ as the anticorrosion gas, the same effect as above was obtained. still,
In this case, the anticorrosion gas introduction flow rate is Cl ₂ : 90cc / min., SF ₆ : 5c
c / min., and other anticorrosion treatment conditions are the same as those when chlorine gas is used as the anticorrosion gas. In each of the above embodiments, as the sample, for example, a sample containing Al, particularly an Al film, an Al alloy film (for example, 0.5 to 5% Cu-containing A
This is particularly suitable when a sample of a laminated structure film using an (alloy film) or a barrier metal or the like is used. In addition to the above embodiment, ozone may be used to passivate the anticorrosion-treated sample 70.
In this case, the means for converting the post-treatment gas into a plasma in the above embodiment is unnecessary, and instead, a means for generating ozone and a means for introducing the ozone generated by the means into the space 91 are provided. is necessary. Further, if the ozone can be irradiated with ultraviolet rays (UV), the quality of the passivation film formed on the pattern surface becomes denser and stronger, which is more preferable in terms of anticorrosion. In the above embodiment, the following effects can be obtained. (1) Since the wet anticorrosion treatment is not required, the time required to complete the anticorrosion treatment of the sample can be greatly reduced, and the throughput can be improved. (2) In the wet-type anticorrosion treatment technology, it is necessary to install a wet-type anticorrosion treatment device and a drying treatment device. However, in this embodiment, since the drying treatment device is unnecessary, the device price can be reduced. Moreover, the floor area occupied by the apparatus can be reduced. (3) Since waste liquid recovery and treatment equipment is unnecessary,
The device configuration is simplified, and the price can be reduced. (4) Since the etching process and the anticorrosion process can be performed in the same processing chamber, it is unnecessary to transport the sample from the etching process unit to the anticorrosion process unit. Therefore, the time required for the anticorrosion treatment of the sample can be further reduced, and the throughput can be further improved. (5) Since the etching process and the anticorrosion process are performed in the same processing chamber, the cost of the apparatus can be reduced and the floor area occupied by the apparatus can be reduced. (6) The sample can be over-etched using the plasma of the anticorrosion gas. In this case, switching between the etching gas and the anticorrosion gas is performed according to a time limit or an etching end point determination signal from an etching end point detecting means (not shown). (7) The sample can be subjected to the anticorrosion treatment using the plasma of the anticorrosion gas during the etching process of the sample using the plasma of the etching gas containing the anticorrosion gas.
In this case, during the period of the sample etching process, alternate introduction of the etching gas and the anticorrosion gas is performed. Note that, instead of the above embodiment, the above-described processing can be performed using an apparatus in which the etching processing space and the anticorrosion processing space are separate spaces (that is, two processing chambers). In each of the above embodiments, the sample is etched with plasma generated by the magnetic field microwave discharge, and then subjected to the anticorrosion treatment using the plasma generated by the magnetic field microwave discharge. There is no particular limitation on whether to use the plasma generated by the method. For example, the sample after the plasma etching treatment may be subjected to anticorrosion treatment using plasma generated by a high-frequency magnetic field discharge such as a DC discharge, an AC discharge (high-frequency discharge), or a magnetron discharge. In addition, anticorrosion treatment may be performed using plasma generated by non-magnetic field microwave discharge. In this case, it is desirable to apply a bias to the sample subjected to the anticorrosion treatment. Further, the anticorrosion gas may be converted into plasma by using other energy, for example, light energy (light excitation) without depending on discharge. In each of the above embodiments, the etching gas and the anticorrosion gas are turned into plasma in the processing chamber.
In addition, the etching gas and the anticorrosion gas are converted into plasma outside the processing chamber, and the plasma is transported (transferred) into the processing chamber.
You may. In this case, for example, the sample after the plasma etching treatment is subjected to anticorrosion treatment using plasma of an anticorrosion gas generated outside the processing chamber and transported (transferred) into the processing chamber. For example, the sample is etched by plasma of an etching gas generated outside the processing chamber and transported (transferred) into the processing chamber, and the etched sample is generated outside the processing chamber and transported (transferred) into the processing chamber. The anticorrosion treatment is performed by using the plasma of the anticorrosion gas. Further, in the present invention, as a sample, a metal film of Al, Si, Cu, W, Ti, Mo, or the like, an alloy film thereof,
Samples of an alloy film of these and a film having a high-melting point metal such as W or Mo and a silicide film of these or a TiN or TiW film can be employed.

【The invention's effect】

ADVANTAGE OF THE INVENTION According to this invention, since a wet-type anticorrosion process becomes unnecessary, there exists an effect which can improve the throughput in the process of the sample which requires an etching process and an anticorrosion process.

[Brief description of the drawings]

FIG. 1 is an apparatus configuration diagram of a plasma etching apparatus according to one embodiment of the present invention. FIG. 2 is a vertical sectional view of a main part of an example of a sample processed using the plasma etching apparatus of FIG. FIG. 3 is a longitudinal sectional view of a main part of the sample shown in FIG. 2 after an etching process.

[Explanation of symbols]

10 buffer chamber, 20, 21 discharge tube, 30 to 33 waveguide, 40, 41 magnetron, 50 solenoid coil, 61, 63 sample table, 70 sample, 100, 101 ... exhaust nozzle, 110, 115 ... gas introduction path, 111 ... etching gas source, 112, 114, 117 ... gas conduit, 113 ... anticorrosive gas source, 116 ... post-processing gas source.

 ──────────────────────────────────────────────────の Continued on the front page (72) Inventor Hironobu Kawahara 794, Higashi-Toyoi, Kazamatsu, Kudamatsu, Yamaguchi Prefecture Inside the Kasado Plant of Hitachi, Ltd. (72) Inventor Yoshiaki Sato 794, Higashi Toyoi, Kudamatsu, Yamaguchi, Japan (56) References JP-A-57-13743 (JP, A) JP-A-63-125685 (JP, A) JP-A-63-245926 (JP, A) JP-A-61-90445 (JP, A) JP-A-62-58636 (JP, A) JP-A-56-15044 (JP, A) JP-A-64-82550 (JP, A) JP-A-57-117241 (JP, A)

Claims (2)

(57) [Claims] In a sample processing method for processing a sample on which a laminated metal film having an Al alloy film and a metal film is formed, a step of converting a chlorine-containing gas into a plasma, and utilizing the plasma of the chlorine-containing gas. Etching the sample by plasma treatment; converting the chlorine-containing anticorrosive gas into a plasma; and etching the chloride adhering to the sample during the etching with a lower bias power than the etching. A sample processing method, comprising: an anti-corrosion plasma processing step of removing by reacting with plasma; and a step of removing a resist attached to the sample after the anti-corrosion plasma processing step. 2. The sample processing method according to claim 1, wherein said metal film is a TiN film.