JPH03225830A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH03225830A JPH03225830A JP2132690A JP2132690A JPH03225830A JP H03225830 A JPH03225830 A JP H03225830A JP 2132690 A JP2132690 A JP 2132690A JP 2132690 A JP2132690 A JP 2132690A JP H03225830 A JPH03225830 A JP H03225830A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- wirings
- photoresist
- alloy
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 20
- 239000007789 gas Substances 0.000 claims abstract description 19
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 13
- 238000004380 ashing Methods 0.000 claims abstract description 10
- 238000001312 dry etching Methods 0.000 claims abstract description 9
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 6
- 239000000956 alloy Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 7
- 239000000460 chlorine Substances 0.000 claims description 7
- 229910052801 chlorine Inorganic materials 0.000 claims description 7
- 238000009832 plasma treatment Methods 0.000 claims description 6
- 238000011282 treatment Methods 0.000 claims description 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000005260 corrosion Methods 0.000 abstract description 12
- 230000007797 corrosion Effects 0.000 abstract description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract 3
- 229910001882 dioxygen Inorganic materials 0.000 abstract 3
- 239000010949 copper Substances 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 13
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910000881 Cu alloy Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910000711 U alloy Inorganic materials 0.000 description 1
- 230000002421 anti-septic effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体装置の製造方法に関し、特に半導体基
板上の配線を微細加工する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method of manufacturing a semiconductor device, and particularly to a method of finely processing wiring on a semiconductor substrate.
近年、半導体集積回路の高集積化に伴い、アルミニウム
の配線技術においては、各種のマイグレーションの発生
が確認され、その抑制効果として微量の銅（例えば０．
１〜５％）をアルミニウムに添加する技術が知られてお
り、すでに量産に導入されている。しかし、アルミニウ
ムに微量の銅を添加した合金は微細加工する上で数多く
の問題をかかえており、その最も大きなものとして、銅
添加による配線の腐食（以下アフターコロ−ジョンと称
す）が報告されているが腐食の発生機構に関しては、依
然不明な点が多い。例えば重量比０．５％の銅入りアル
ミニウム合金（以下Ａρ０．５％Ｃｕと称す）を半導体
集積回路の配線材料に用いた従来の配線技術を、第３図
に示す工程概略縦断面図を用いて説明する。In recent years, with the increasing integration of semiconductor integrated circuits, the occurrence of various types of migration has been confirmed in aluminum wiring technology, and the use of trace amounts of copper (for example,
The technology of adding aluminum (1 to 5%) to aluminum is known and has already been introduced into mass production. However, alloys made by adding a small amount of copper to aluminum have many problems in microfabrication, and the biggest one is reported to be corrosion of wiring due to the addition of copper (hereinafter referred to as after-corrosion). However, there are still many unknowns regarding the mechanism by which corrosion occurs. For example, a conventional wiring technology using a copper-containing aluminum alloy with a weight ratio of 0.5% (hereinafter referred to as Aρ0.5%Cu) as a wiring material for a semiconductor integrated circuit is explained using the process schematic longitudinal cross-sectional view shown in Fig. 3. I will explain.
まず、第３図（ａ＞に示すように、所定の拡散層、絶縁
膜等が形成された半導体基板１の表面にＡρ−０，５％
Ｃｕ合金２をスパッタ法により膜付けを行ない、その上
にフォトリソグラフィー工程によりフォトレジストパタ
ン３を形成する。ここで、このｔｉｅのフォトレジスト
パタン３の耐ドライエツチ性を増す為に紫外光（ＵＶ光
）を照射する。次に第３図（ｂ）に示すように、フォト
レジストパタン３をマスクにしてＡ、！ｅ−０，５％Ｃ
ｕ合金２を反応性イオンエツチング（ＲＩＥ）法により
ドライエツチングを行ない、Ａρ−０，５％Ｃｕ配！！
４を形成する。First, as shown in FIG. 3 (a), the surface of the semiconductor substrate 1 on which a predetermined diffusion layer, insulating film, etc. are formed is coated with Aρ-0.5%.
A Cu alloy 2 is deposited as a film by sputtering, and a photoresist pattern 3 is formed thereon by a photolithography process. Here, in order to increase the dry etch resistance of the photoresist pattern 3 of this tie, ultraviolet light (UV light) is irradiated. Next, as shown in FIG. 3(b), using the photoresist pattern 3 as a mask, A,! e-0.5%C
U alloy 2 was dry etched using reactive ion etching (RIE) to form an Aρ-0.5% Cu arrangement! !
form 4.
ここで用いられるドライエツチングガスとしては、三塩
化ホウ素（ＢＣη３）と塩素（Ｃ，＆２）にアルミニウ
ム配線のサイドエッチを防止する為にフロン系ガス（例
えばＣＦ４．ＣＨＦ、など）を少量添加したガスが一般
に用いられる。この場合は、エツチング時にＡρ−０，
５％Ｃｕ配線４及びフォトレジストパタン３の側壁にデ
ボ膜５が付着し、そのデボ膜内部には反応生成物である
塩化アルミニウム（ＡρＣｆ３）やガスそのものである
塩素（Ｃρ）が含まれた状態となっている。The dry etching gas used here is a gas containing boron trichloride (BCη3) and chlorine (C, &2) with a small amount of fluorocarbon gas (e.g. CF4, CHF, etc.) added to prevent side etching of the aluminum wiring. is commonly used. In this case, Aρ-0,
A debo film 5 is attached to the side walls of the 5% Cu wiring 4 and the photoresist pattern 3, and the inside of the debo film contains aluminum chloride (AρCf3), which is a reaction product, and chlorine (Cρ), which is a gas itself. It becomes.
次に第３図（ｃ）に示すように、半導体基板１を酸素プ
ラズマ雰囲気にさらしてレジストパタンのアッシングを
行なう。しかしながら、レジストやアルミニウム合金配
線の側壁に付着したデポ膜５は完全に除去されずに塩化
アルミニウム（ＡｆｆｌＣ，Ｒ５）や塩素（Ｃ−＆２）
を含んだままの状態で残存している。Next, as shown in FIG. 3(c), the semiconductor substrate 1 is exposed to an oxygen plasma atmosphere to perform ashing of the resist pattern. However, the deposited film 5 attached to the resist and the side walls of the aluminum alloy wiring is not completely removed, and aluminum chloride (AfflC, R5) and chlorine (C-&2) are removed.
It remains in a state containing.
上述した従来の半導体装置の製造方法は、アルミニウム
合金配線形成後にマスクであるフォトレジストの除去を
行なっても、アルミニウム合金配線の側壁に塩化アルミ
ニウム（ＡβＣ！２３）や塩素＜Ｃｌ２）を含んだデポ
膜が残存しているので、大気中の水分と反応し塩化水素
（ＨＣｌ）を形成し、アルミニウム（Ａ１）と銅（Ｃｕ
）の電池効果によって、アルミニウム合金配線にアフタ
ーコロ−ジョンが発生する欠点がある。アフターコロ−
ジョンは配線断線へとつながり、製品の信頼性の面から
も大きな問題となる。In the conventional semiconductor device manufacturing method described above, even if the photoresist mask is removed after forming the aluminum alloy wiring, deposits containing aluminum chloride (AβC!23) and chlorine<Cl2) remain on the sidewalls of the aluminum alloy wiring. Since the film remains, it reacts with moisture in the atmosphere to form hydrogen chloride (HCl), and aluminum (A1) and copper (Cu
) has the disadvantage that aftercorrosion occurs in the aluminum alloy wiring due to the battery effect. After color
This can lead to wire breakage, which poses a major problem in terms of product reliability.
本発明の目的は、アルミニウム合金配線のアフターコロ
−ジョンの発生を防ぐと共に、配線の耐蝕性をよりよく
することがてき、微細配線を用いる製品の信頼性を高め
ることができる半導体装置の製造方法を提供することに
ある。An object of the present invention is to prevent the occurrence of after-corrosion in aluminum alloy wiring, improve the corrosion resistance of the wiring, and improve the reliability of products using fine wiring. Our goal is to provide the following.
本発明の半導体装置の製造方法は、アルミニウム合金配
線を形成する工程において、前記合金のドライエツチン
グ後に塩素ガス単独のプラズマ処理を行ない、次に酸素
系ガスプラズマによるフォトレジストアッシングを行な
う工程を有している。The method for manufacturing a semiconductor device of the present invention includes, in the step of forming an aluminum alloy wiring, performing plasma treatment using chlorine gas alone after dry etching the alloy, and then performing photoresist ashing using oxygen-based gas plasma. ing.
次に、本発明について図面を参照して説明する。第１図
は本発明の一実施例の工程順概略縦断面図である。Next, the present invention will be explained with reference to the drawings. FIG. 1 is a schematic vertical cross-sectional view of an embodiment of the present invention in order of steps.
はじめに、第１図（ａ）に示すように、所定の拡散層、
絶縁膜等が形成された半導体基板１の表面にＡ！２−０
．５％Ｃｕ合金をスパッタ法により約１．０μｍ膜付け
する。その上にフォトリソグラフィー工程により微細な
フォトレジストパタン３を形成する。ここで、この後の
フォトレジストパタンの耐ドライエツチ性の向上を目的
として、紫外光（ＵＶ光）を照射する。First, as shown in FIG. 1(a), a predetermined diffusion layer,
A! on the surface of the semiconductor substrate 1 on which an insulating film etc. are formed. 2-0
．． A 5% Cu alloy is deposited to a thickness of about 1.0 μm by sputtering. A fine photoresist pattern 3 is formed thereon by a photolithography process. Here, ultraviolet light (UV light) is irradiated for the purpose of improving the dry etch resistance of the subsequent photoresist pattern.
次に、第１図（ｂ）に示すように、フォトレジストパタ
ン３をマスクとして、ＡＪ！−０，５％Ｃｕ合金２を反
応性イオンエツチング（ＲＩＥ）法によりドライエツチ
ングを行ないＡｆｆｌ−０，５％Ｃｕ配線４を形成する
。この時、フ才トレシストとＡＪ−０，５％Ｃｕの側壁
にはデボ膜５が付着している。前記ドライエツチングは
、バッチ式ＲＩＥ装置を用い、ガスはＢＣｌ１３ ：１
１００５ＣＣ，Ｃｆ２ ： ５０ＳＣＣＭ、ＣＨＦ３
：１１０５ＣＣの混合ガスを用いた。エツチング時の圧
力は２０〜４０ｍＴｏｒｒとし、ＲＦパワーは１ｋＷと
した。Next, as shown in FIG. 1(b), using the photoresist pattern 3 as a mask, AJ! -0.5% Cu alloy 2 is dry etched by reactive ion etching (RIE) to form Affl-0.5% Cu wiring 4. At this time, a deformation film 5 is attached to the sidewalls of the free trecyst and AJ-0.5% Cu. The dry etching is performed using a batch type RIE device, and the gas is BCl13:1.
1005CC, Cf2: 50SCCM, CHF3
:1105CC mixed gas was used. The pressure during etching was 20 to 40 mTorr, and the RF power was 1 kW.
次に第１図（ｃ）に示す様に、ドライエツチング終了後
、前記ＲＩＥ装置を用いてＣｆｆ１２ガスによるプラズ
マ処理にてデボ膜の除去を行なう。この時の条件は、Ｃ
１２： ２０ Ｓ ＣＣＭ 、圧カニ１００ｍＴｏｒｒ
、ＲＦパワー：３００ｗで１分間の処理時間とした。Next, as shown in FIG. 1(c), after dry etching is completed, the deformed film is removed by plasma treatment using Cff12 gas using the RIE apparatus. The conditions at this time are C
12: 20S CCM, pressure crab 100mTorr
, RF power: 300 W, processing time was 1 minute.
次に、第１図（ｄ）に示すように、酸素系ガスによるア
ッシングを行ないフォトレジストを除去すると共に、Ａ
Ｊ−０，５％Ｃｕ配線４のまわりに不動態の膜である酸
化アルミニウム膜６を形成しな。用いた装置はバレル型
のプラズマアッシング装置て、０２ ： ２００ Ｓ
ＣＣＭ 、圧カニ６００ｍ Ｔ ｏ ｒ ｒ 、常温
で１００分間の処理を行なった。Next, as shown in FIG. 1(d), ashing is performed using oxygen-based gas to remove the photoresist, and
An aluminum oxide film 6, which is a passive film, is not formed around the J-0,5% Cu wiring 4. The device used was a barrel-type plasma ashing device, 02:200S.
The treatment was carried out using CCM, a pressure crab of 600 m Torr, and room temperature for 100 minutes.
第２図は本発明実施後の半導体基板を大気中に放置し、
アフターコロ−ジョンが発生する迄の時間を示すグラフ
である。従来例では３６時間以内にアフターコロ−ジョ
ンが発生するが、本発明の実施例では１２０時間後でも
、アフターコロ−ジョンの発生は全く見られなかった。FIG. 2 shows a semiconductor substrate after implementing the present invention left in the atmosphere.
It is a graph showing the time until after-corrosion occurs. In the conventional example, after-corrosion occurs within 36 hours, but in the example of the present invention, no after-corrosion was observed even after 120 hours.
本発明の第２の実施例を第１の実施例で用いた第１図を
用いて説明する。ここでも、本発明の第１の実施例を示
す第１図（ａ）〜（ｄ）までと全く同じ工程で、ＡＪ−
０，５％Ｃｕ合金の微細加工を行なう。第２の実施例で
は、ＡＪ−０，５％Ｃｕ合金のドライエツチングと塩素
ガスによるプラズマ処理と、その後の酸素系プラズマに
よるフォトレジストのアッシングをインラインタイプと
して接続された別々のチャンバーで行ない、各処理間の
搬送は全て真空中で行なう。この実施例では、各処理室
が全て独立している為に残留している反応生成物（Ａ、
ＲＣＪ１３等の）の半導体基板への再付着を極力排除で
き、更に各処理室間の搬送を全て真空中で行なう為に水
分の吸着も極力なくすことかできる。従って、より良い
防腐効果が得られる利点がある。A second embodiment of the present invention will be explained using FIG. 1 used in the first embodiment. Here, AJ-
Perform micromachining of 0.5% Cu alloy. In the second example, dry etching of the AJ-0.5% Cu alloy, plasma treatment with chlorine gas, and subsequent ashing of the photoresist with oxygen-based plasma were performed in separate chambers connected as an in-line type. All transportation between treatments is performed in vacuum. In this example, since each processing chamber is all independent, the remaining reaction products (A,
Re-adhesion of RCJ13 (such as RCJ13) onto the semiconductor substrate can be avoided as much as possible, and furthermore, since all the transportation between the processing chambers is carried out in vacuum, adsorption of moisture can also be avoided as much as possible. Therefore, there is an advantage that a better antiseptic effect can be obtained.
以上説明したように本発明は、アルミニウム合金配線を
形成する工程において、前記合金のドライエツチング後
に、塩素（ＣｕＩ２）ガス単独のプラズマ処理を施し、
更に酸素系ガスプラズマによるフォトレジストのアッシ
ングを行なうことにより、アフターコロ−ジョンを発生
させる原因となる塩化アルミニウム（ＡＪＣρ、）や塩
素（Ｃ（）を含んだデボ膜を完全に除去し、酸素プラズ
マによってアルミニウム合金の表面に不動態の酸化アル
ミニウム膜を形成し、配線の腐食を防止できる効果があ
る。従って、微細配線を用いる製品の信頼性を高めるの
に、多大なる効果がある。As explained above, in the process of forming aluminum alloy wiring, the present invention performs plasma treatment using chlorine (CuI2) gas alone after dry etching the alloy,
Furthermore, by ashing the photoresist with oxygen-based gas plasma, the deposited film containing aluminum chloride (AJCρ) and chlorine (C()), which cause aftercorrosion, is completely removed. This has the effect of forming a passive aluminum oxide film on the surface of the aluminum alloy and preventing corrosion of wiring.Therefore, it has a great effect on increasing the reliability of products using fine wiring.
【図面の簡単な説明】
第１図（ａ）〜（ｄ）は、本発明の一実施例を示す工程
順概略縦断面図、第２図は本発明を実施したＡ、Ｒ−０
，５％Ｃｕ配線の形成された半導体基板を大気中に放置
した場合に、アフターコロ−ジョンか発生する迄の時間
を従来と比較して示したグラフ、第３図（ａ）〜（ｃ）
は従来の技術を示す工程概略縦断面図である。
１・・・拡散層又は絶縁膜等が形成された半導体基板、
２・・・ＡＪ−０，５％Ｃｕ合金、３・・・フォトレジ
ストバタン、４・ Ａｆ−０，５％Ｃｕ配線、７５・・
・デボ膜、６・・・酸化アルミニウム膜。[BRIEF DESCRIPTION OF THE DRAWINGS] FIGS. 1(a) to (d) are schematic longitudinal cross-sectional views showing an example of the present invention in the order of steps, and FIG. 2 is an A, R-0
, a graph showing the time required for after-corrosion to occur when a semiconductor substrate on which 5% Cu wiring is formed is left in the atmosphere, compared to the conventional method, Figures 3 (a) to (c).
1 is a schematic vertical cross-sectional view of a process showing a conventional technique. 1... A semiconductor substrate on which a diffusion layer or an insulating film is formed,
2... AJ-0.5% Cu alloy, 3... Photoresist baton, 4. Af-0.5% Cu wiring, 75...
- Devo film, 6... aluminum oxide film.
Claims (1)
程において、半導体基板上に形成された合金をフォトレ
ジストをマスクとしてドライエッチングを行ない、配線
を形成した後に、塩素（Ｃｌ＿２）ガスによるプラズマ
処理を行ない、次に酸素（Ｏ＿２）系ガスによりフォト
レジストのアッシング処理を行なうことを特徴とする半
導体装置の製造方法。 ２、前記アルミニウム合金はバリアメタルとの積層膜で
あることを特徴とする請求項１記載の半導体装置の製造
方法。 ３、前記フォトレジストのアッシング処理に用いるガス
は酸素（Ｏ＿２）ガスとフロンガス（例えばＣＦ＿４又
はＣＨＦ＿３）の混合ガスであることを特徴とする請求
項１記載の半導体装置の製造方法。 ４、前記アルミニウム合金のドライエッチングと塩素ガ
スプラズマ処理と酸素系ガスプラズマによるアッシング
間の搬送は全て真空中にて搬送することを特徴とする請
求項１記載の半導体装置の製造方法。[Claims] 1. In the step of forming aluminum alloy wiring on a semiconductor substrate, dry etching is performed on the alloy formed on the semiconductor substrate using a photoresist as a mask to form wiring, and then chlorine (Cl_2) is applied. 1. A method of manufacturing a semiconductor device, comprising performing plasma treatment using a gas, and then performing ashing treatment on a photoresist using an oxygen (O_2)-based gas. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the aluminum alloy is a laminated film with a barrier metal. 3. The method of manufacturing a semiconductor device according to claim 1, wherein the gas used for the ashing process of the photoresist is a mixed gas of oxygen (O_2) gas and fluorocarbon gas (for example, CF_4 or CHF_3). 4. The method of manufacturing a semiconductor device according to claim 1, wherein the aluminum alloy is transported in a vacuum during dry etching, chlorine gas plasma treatment, and ashing using oxygen-based gas plasma.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2132690A JPH03225830A (en) | 1990-01-30 | 1990-01-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2132690A JPH03225830A (en) | 1990-01-30 | 1990-01-30 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03225830A true JPH03225830A (en) | 1991-10-04 |
Family
ID=12052020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2132690A Pending JPH03225830A (en) | 1990-01-30 | 1990-01-30 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03225830A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0316126A (en) * | 1989-03-10 | 1991-01-24 | Hitachi Ltd | Method and apparatus for treatment of specimen |
-
1990
- 1990-01-30 JP JP2132690A patent/JPH03225830A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0316126A (en) * | 1989-03-10 | 1991-01-24 | Hitachi Ltd | Method and apparatus for treatment of specimen |
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