KR0174817B1 - Sample treating method - Google Patents

Abstract

The present invention relates to a sample processing method and apparatus employed for processing a sample, such as a semiconductor device substrate, in particular, a sample to be etched and prevented from corrosion.

In the present invention, the deposit formed by the etching of the sample is sufficiently and easily removed from the sample when the etched sample is treated with a plasma of the corrosion preventing gas capable of removing the deposit. Thus, there is no need for a wet anticorrosion treatment that can improve the processing drawput of samples to be etched and corroded.

Description

Sample processing method

1 is a block diagram of a plasma etching apparatus according to an embodiment of the present invention.

FIG. 2 is a vertical sectional view showing an important part of a temporary example of a sample processed using the plasma-etching apparatus of FIG.

3 is a vertical sectional view showing an important part of the sample of FIG. 2 after etching.

* Explanation of symbols for main parts of the drawings

10: buffer chamber 11: top wall

12, 13 opening 14 bottom wall

20, 21: discharge tube 30, 32: waveguide

40: magnetron 50: solenoid coil

60, 62: sample axis 61, 63: sample base

70: sample 80, 82: bellows

81, 83: flange 90, 91: space

100, 101: exhaust exposure 110, 115: gas introduction path

111, 116: etching gas source 112, 114: gas conduit

113: corrosion prevention gas source 120: high frequency power supply

130: radiation stage

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sample processing method and apparatus, and more particularly, to a method and apparatus for processing an etch treatment and an anticorrosion treatment by processing a sample such as a semiconductor device substrate.

In etching using plasma of halogen gas of a sample such as a semiconductor device substrate, for example, an aluminum (Al) film, an aluminum alloy film, or a sample having a multilayer structure film using these and a barrier metal, exposure to the atmosphere after the etching treatment is performed. Corrosion after it becomes a problem, and therefore, these samples require corrosion leaving treatment together with etching treatment. In order to respond to such demands, the following techniques have been proposed.

For example, Japanese Patent Publication No. 1987-30268 discloses a method for drying aluminum alloy films such as aluminum or aluminum-silicon, aluminum-copper, aluminum-silicon-copper, etc. using a halogen gas in an active state in a container. After etching, a dry etching post-treatment technique is described in which a mixed gas plasma treatment of fluorocabon and oxygen is performed without taking it out of the vessel.

For example, in Japanese Patent Publication No. 1983-12343, in order to prevent erosion after etching of an aluminum or aluminum alloy film etched using a chlorinated plasma, a technique of exposing the etched film to a fluorinated plasma is disclosed. It is described.

However, in such a technique, it is difficult to remove the corrosive deposits generated in the etching process of the sample and adhered to the side wall portions of the pattern. Moreover, in such a prior art, the substitution reaction only in the surface layer of the corrosive deposits attached to the side wall portion of the pattern (for example, AlCl ₃ as a component of the corrosive deposits and oxygen, for example, as a post-process gas plasma component Substitution of Al ₂ O ₃ by the reaction occurs, and such a substitution reaction inside the corrosive deposit does not proceed. On the other hand, when such a sample is exposed to the atmosphere, the corrosive deposits are not dense, so that moisture in the air penetrates into the corrosive deposits and reacts with the corrosive deposits of the corrosive deposits. Hydrochloric acid) is produced and the sample corrodes due to the corrosion component. As described above, in the above conventional technique, corrosion resistance of the sample is insufficient after the etching treatment. Particularly in recent multilayered thin films of Al and other materials or aluminum alloy films containing copper, corrosion occurs due to so-called battery action (Al becomes an anode), and the degree of corrosion is accelerated, resulting in insufficient corrosion protection. The figure becomes more remarkable.

Therefore, such a sample is usually subjected to a corrosion prevention treatment in a wet method after etching, as described in, for example, Japanese Patent Laid-Open No. 1986-133388. In the wet corrosion prevention treatment, the corrosive deposits adhering to the sidewalls of the pattern of the sample can be removed, and the corrosion resistance in the atmosphere of the sample after the etching treatment can be improved.

In the above-mentioned prior art in which the sample is subjected to the corrosion treatment by the wet method after the etching treatment, if the water remains after the corrosion prevention treatment in the wet method, the residual moisture and the residue remaining in the sample after the corrosion prevention treatment in the wet method are described. For example, hydrochloric acid (HCl), which is a corrosive component, is produced by reaction with a chlorine-containing component or chlorine in the atmosphere, thereby corroding the sample after the anticorrosion treatment in a wet method. For this reason, drying treatment is inevitably necessary after the corrosion prevention treatment in the wet method.

Therefore, such a prior art has the following problems.

(1) After etching, the time required to complete the anticorrosion treatment of the sample is increased (at least the anticorrosion treatment time in the wet method + drying treatment time), thereby reducing the throughput.

(2) When the anticorrosion treatment of the sample after the etching treatment is performed using a wet anticorrosion treatment apparatus and a separate drying treatment apparatus (in this case, a means for conveying the sample between apparatuses is also required), And the occupying floor area of the device increases.

(3) The recovery of the waste liquid from the anti-corrosion treatment in the wet method and the processing apparatus thereof become unnecessary, and the apparatus configuration becomes complicated, so that the price increases.

SUMMARY OF THE INVENTION An object of the present invention is to provide a sample processing method and apparatus which can improve the throughput in the treatment of a sample requiring corrosion prevention treatment together with the etching treatment.

The object is at least a sample processing method, the step of plasma etching the etching gas, the step of etching the sample using the plasma of the etching gas, and the deposits generated in the etching treatment of the sample is removed from the sample. And a step of subjecting the corrosion preventing gas to plasma and a step of preventing corrosion treatment of the sample on which the etching treatment is completed by using the plasma of the corrosion preventing gas. Means for plasma forming, means for plasma forming an anti-corrosion gas capable of removing deposits from an etching process of a sample using the plasma of the etching gas, plasma for the etching gas and plasma for anti-corrosion gas are used. By means of holding a sample to be treated.

The inside of the processing chamber is depressurized by the decompression exhaust means. The sample is held in the processing chamber by the sample holding means. The etching gas is introduced into the process chamber by the gas introducing means. The etching gas in the processing chamber is converted into plasma by plasma forming means. The sample held by the sample holding means is etched by plasma. On the other hand, the corrosion preventing gas is introduced into the processing chamber by the gas introducing means. The corrosion preventing gas in the processing chamber is plasmalized by plasma forming means. The sample held by the sample holding means is processed using the plasma.

By performing the anti-corrosion treatment, the reaction product generated in the etching process of the sample and adhered to the sample, or an etching gas component having a corrosiveness in the atmosphere (hereinafter, referred to as an adherent), is a plasma of the anti-corrosion gas. In the treatment of the used sample, it is sufficiently and easily removed from the sample without creating new deposits.

Therefore, the wet corrosion prevention treatment is unnecessary, and the time required for completing the corrosion prevention treatment of the sample is greatly shortened.

Hereinafter, an example of the present invention will be described with reference to FIGS. 1 to 3.

In FIG. 1, two openings 12 and 13 are formed in the buffer chamber 10 in the top wall 11 in this case at predetermined intervals and diameters. Means (not shown) for depressurizing and evacuating the inside of the buffer chamber 10 are provided in the buffer chamber 10. The discharge tube 20 is airtightly provided on the top wall 11 of the buffer chamber 10 corresponding to the opening 12. In this case, the shape of the discharge tube 20 is substantially hemispherical. The waveguide 30 is provided on the outside of the discharge tube 20 including the discharge tube 20 therein. The axis of the waveguide 30 coincides with the axis of the discharge tube 20. The waveguide 30 and the magnetron 40 which are means for oscillating microwaves are connected by the waveguide 31. The magnetic field generating means, for example, the solenoid coil 50, is surrounded by the waveguide 30 outside the waveguide 30 and substantially corresponds to the discharge tube 20. The solenoid coil 50 is electrically connected to a power supply (not shown) via an energization amount adjusting means (not shown). The sample stem 60 protrudes the upper part into the buffer chamber 10 and the discharge tube 20, and protrudes the lower part out of the buffer chamber 10 to the bottom wall 14 of the buffer chamber 10. Installed confidentially. The sample stand 61 is provided substantially horizontally on the upper end of the sample stand 60. The planar shape and size of the sample stage 61 are smaller than the opening 12 and larger than the sample 70. The sample stage 61 has a sample mounting surface on its surface, that is, on a surface corresponding to the top of the discharge tube 20. The shaft centers of the sample base shaft 60 and the sample stage 61 substantially coincide with those of the discharge tube 20. For example, the metal bellows 80 is provided around the sample axis 60 in the buffer chamber 10. The lower end of the bellows 80 is provided on the inner surface of the bottom wall 14 of the buffer chamber 10. The flange 81 is provided on the upper end of the bellows 80. Sealing (not shown) is provided on the surface of the flange 81 corresponding to the inner surface of the top wall 11 of the buffer chamber 10. Moreover, the means (not shown) which extends and drives the bellows 80 is provided. In the buffer chamber 10 in a state where the bellows 80 is extended by its telescopic driving means, and thus the flange agent 81 is pressed against the inner surface of the top wall 11 of the buffer chamber 10 via sealing. The space 90 is formed to be hermetically blocked. The exhaust nozzle 100 communicates with the space 90 and is formed in the bottom wall 14 of the buffer chamber 10. An exhaust pipe (not shown) connected to a reduced pressure exhaust device (not shown) is connected to the exhaust nozzle 100. On-off valves or exhaust resistance variable valves (not shown) are provided in the exhaust pipe. The gas introduction path 110 communicates with the space 90 and is formed on the top wall 11 of the buffer chamber 10. A gas conduit 112 connected to the etching gas source 111 is connected to the gas introduction path 110. On-off valves and gas flow rate control devices (not shown) are provided in the gas conduit 112. In this case, the gas conduit 114 connected to the corrosion preventing gas source 113 is connected to the gas conduit 112 on the downstream side of the on / off valve or gas flow rate control device provided in the gas conduit 112. The gas conduit 114 is provided with an on-off valve and a gas flow rate controller (not shown). In addition, other gas conduits 114 may be directly connected to the gas introduction path 110. A bias application power supply, for example, a high frequency power supply 120 is provided. The sample stand 61 is electrically connected to the high frequency power supply 120 via the sample stand 60. In addition, the buffer chamber 10 and the high frequency power supply 120 are respectively grounded. In addition, the sample 70 is capable of temperature control at a predetermined temperature via the sample stage 61.

In FIG. 1, the discharge tube 21 is airtightly provided on the top wall 11 of the buffer chamber 10 corresponding to the opening 13. In this case, the shape of the discharge tube 21 is a substantially cylindrical shape which has one substantially flat closed end and an open end on the other. The waveguide 32 is provided at the outside of the discharge tube 21 and includes the discharge tube 21 therein. The shaft center of the waveguide 32 is substantially coincident with that of the discharge tube 21. The sample axis 62 is mounted on the inner surface of the bottom wall 14 of the buffer chamber 10. The sample stage 63 is disposed substantially horizontally on the upper end of the sample spindle 62. The planar shape and size of the sample stage 63 are smaller than the opening 1 and larger than the sample 70. The sample stage 63 has a sample mounting surface on its surface, that is, a surface facing the inner surface of the closed end of the discharge tube 21. The shaft centers of the sample table shaft 62 and the sample table 63 substantially coincide with those of the discharge tube 21. For example, a metal bellows 82 is provided around the sample axis 62 in the buffer chamber 10. The lower end of the bellows 82 is provided on the inner surface of the bottom wall 14 of the buffer chamber 10. The flange 83 is provided on the upper end of the bellows 82. Sealing (not shown) is provided on the surface of the flange 83 facing the inner surface of the top wall 11 of the buffer chamber 10. Moreover, the means (not shown) which extends and contracts the bellows 82 is provided. When the bellows 82 is extended by this expansion and driving unit, the flange 83 is pressed in the buffer chamber 10 in a state where the flange 83 is pressed against the inner surface of the top wall 11 of the buffer chamber 10 by sealing. The space 91 is formed to be hermetically blocked. The exhaust nozzle 101 communicates with the space 91 and is formed in the bottom wall 14 of the buffer chamber 10. An exhaust pipe (not shown) connected to a reduced pressure exhaust device (not shown) is connected to the exhaust nozzle 101. On-off valves and exhaust resistance variable valves (not shown) are provided in the exhaust pipe. The gas introduction path 115 communicates with the space 91 and is formed on the top wall 11 of the buffer chamber 10. A gas conduit 117 connected to the gas source 116 of the aftertreatment gas is connected to the gas introduction path 115. On-off valves and gas flow rate control devices (not shown) are provided in the gas conduit 117. In FIG. 1, reference numeral 130 is a reflection end.

In addition, in FIG. 1, the sample 70 is introduced into the buffer chamber 10 and guides the sample 70 to the sample mounting surface of the sample stand 61 and the sample 70 is transferred from the sample stand 61 to the sample stand 63. Means for conveying through the buffer chamber 10 and means (both not shown) for receiving the sample 70 from the sample stage 63 and carrying it out of the buffer chamber 10 are provided.

In Article 1, the bellows 80, 82 are each reduced by the operation of the respective telescopic drive means. In this state, the decompression exhaust means is operated. As a result, the inside of the buffer chamber 10 and the discharge tubes 20 and 21 are evacuated under a predetermined pressure. Subsequently, the sample 70 (in this case, one) is brought into the buffer chamber 10, and the sample 70 brought into the posture with the surface to be processed facing the sample mounting surface of the sample stage 61 facing upwards. Is installed. Thereafter, the space 90 is formed. A predetermined etching gas is introduced into the space 90 from the etching gas source 111 at a predetermined flow rate. In this case, introduction of the corrosion preventing gas from the corrosion preventing gas source 113 into the space 90 is stopped. A part of the etching gas in the space 90 is exhausted through the exhaust nozzle 100, whereby the pressure in the space 90 is adjusted to a predetermined etching process pressure. On the other hand, the microwave electric field is generated by the operation of the magnetron 40, and the magnetic field is generated by the operation of the solenoid coil 50. The etching gas in the inner portion of the discharge tube 20 in the space 90 is converted into plasma by synergy of the microwave electric field and the magnetic field. The to-be-processed surface of the sample 70 provided in the sample mounting surface of the sample stand 61 is etched using this plasma. In this etching process, a high frequency bias is applied to the sample 70, and the temperature of the sample 70 is controlled to a predetermined temperature via the sample stage 61. At the end of such an etching process, the introduction of the etching gas is stopped, and the operation of the magnetron 40, the solenoid coil 50, and the high frequency power supply 120 is stopped at the same time.

Thereafter, the space 90 is exhausted again at a predetermined pressure. In addition, the on-off valve provided in the gas conduit 114 is opened. That is, the predetermined corrosion preventing gas is introduced into the space 90 decompressed at a predetermined pressure from the corrosion preventing gas source 113 instead of the etching gas at a predetermined flow rate. A part of the corrosion preventing gas in the space 90 is exhausted through the exhaust nozzle 100, whereby the pressure in the space 90 is adjusted to a predetermined corrosion prevention processing pressure. On the other hand, the microwave electric field is generated by the operation of the magnetron 40, and the magnetic field is generated by the operation of the solenoid coil 50. The corrosion preventing gas in the inner portion of the discharge tube 20 in the space 90 is converted into plasma by synergy of the microwave electric field and the magnetic field. The etched sample 70 provided on the sample mounting surface of the mounting table 61 is subjected to corrosion prevention treatment using the plasma. That is, deposits generated in the plasma-etching treatment of the sample 70, that is, corrosive deposits attached to the pattern sidewall portions that have been difficult to remove in the past, are removed from the sample 70. At the time of such a corrosion prevention process, a high frequency bias is applied to the sample 70 which the etching process was completed, and the temperature of the sample 70 which the etching process was completed is controlled to predetermined temperature via the sample stand 61. FIG. . At the time when such a corrosion prevention process is complete | finished, introduction of the corrosion prevention gas is stopped and at the same time operation | operation of the magnetron 40, the solenoid coil 50, and the high frequency power supply 120 is stopped. The bellows 80 then shrinks.

Subsequently, the sample 70 having been subjected to the corrosion prevention treatment in this state is conveyed from the sample stand 61 to the sample stand 63 via the buffer chamber 70 and placed on the sample mounting surface of the sample stand 63. It is installed in an upright position. Then, the space 91 is formed. From the aftertreatment gas source 116, a predetermined aftertreatment gas, for example, a resist ashing gas or a passivation (surface stabilization) gas is introduced into the space 91 at a predetermined flow rate. A part of the post-treatment gas in the space 91 is exhausted through the exhaust nozzle 101, whereby the pressure in the space 91 is adjusted to a predetermined post-treatment pressure. On the other hand, a microwave electric field is generated by the operation of the magnetron 41. The post-treatment gas in the interior of the discharge tube 21 in the space 91 is converted into plasma by the action of the microwave electric field. The sample 70 provided on the sample mounting surface of the sample stage 63 is subjected to post-treatment such as resist dot processing or passivation processing using the plasma. At the end of the post-treatment, the introduction of the post-treatment gas is stopped and the operation of the magnetron 41 is stopped. In addition, the bellows 82 is shrunk. In this state, the sample 70 which has been processed is received from the sample stage 63 and carried out of the buffer chamber 10.

The above processing operation is performed sequentially, and a sample is processed continuously every one.

As the sample 70, the same thing as what is shown in FIG. 2 is used, for example. In FIG. 2, the sample 70 has a TiN film 72 as a barrier metal on the Si oxide film 71 which is an underlayer oxide film, an Al-Cu-Si alloy film 73 thereon, and a cap metal (on it). 74 is a laminated structure film, and a resist 75 is provided on the cap metal 74. Here, the barrier metal is used to prevent the precipitation of Si in the electrically connected portion between the Si oxide film 71 and the Al-Cu-Si alloy film 73, and is also used for electro migration or stress. It is also used to prevent disconnection of wiring due to migration. As the barrier metal, in addition to the TiN film 71, for example, a TiW, TiW / Ti, TiN / Ti, MoSi ₂ , WSi ₂ , W-based high melting point metal film or an alloy film thereof is used. Like the barrier metal, the cap metal 74 is used to prevent disconnection of the wiring due to electromigration or stress migration. In addition, the cap metal 74 is also used to prevent halation during exposure of the resist film. As the cap metal 74, a film made of TiN, MoSi ₂ , TiW, poly-Si, WSi, or the like is used.

In this case, as the etching gas, a halogen gas such as chlorine-containing gas such as BCl ₃ + Cl ₂ mixed gas is used. In FIG. 1, the BCl ₃ + Cl ₂ mixed gas in the inner portion of the discharge tube of the space 90 is converted into plasma by synergy of a microwave electric field and a magnetic field. The sample 70 shown in FIG. 2 is etched using the plasma. In this case, the etching treatment conditions are as follows.

3 is a longitudinal sectional view of the sample 70 etched under such conditions. As shown in FIG. 3, deposits (chlorides such as reaction products and etching gas components) 140 adhere to the sidewalls or the surface of the resist 75. The sample 70 in which such an etching process was completed was subjected to plasma corrosion prevention treatment using chlorine gas (Cl) as the corrosion prevention gas. That is, in FIG. 1, Cl in the inner portion of the discharge tube 20 in the space 90 is converted into plasma by synergy of the microwave electric field and the magnetic field. The sample 70 having completed the etching treatment shown in FIG. 3 is subjected to corrosion prevention treatment using the plasma. In this case, the corrosion preventing treatment conditions are as follows.

That is, the deposit 140 containing chlorine of the sample 70 after the etching process is removed from the sample 70 on which the etching process is completed by chlorine ions or chlorine radicals in the plasma of Cl gas reacting with the deposit 140. . By such an anticorrosion treatment, no new deposits have been found in the sample 70 after the etching treatment is completed. In addition, when the discharge (corrosion prevention treatment) time is set to a short time of 20 seconds or less, the removal of the secondary material 140 from the sample 70 on which the etching process is completed is insufficient, so that the discharge (corrosion prevention treatment) time is short. 20 seconds is required. However, if the discharge (corrosion prevention treatment) time is too long, the wiring film itself is etched, resulting in a problem that the wiring is thinner than a predetermined pattern. The sample 70 in which such a corrosion prevention process is completed is carried out out of the buffer chamber 10 after completion | finish of a post process. In this case, in the post-processing, the resist doting processing and the passivation processing are simultaneously performed. That is, as the post-treatment gas, an oxygen gas or a gas containing oxygen is used, and the resist 75 is removed from the sample 70 having been subjected to the anti-corrosion treatment by using the plasma of the post-treatment gas. A passivation film is formed on the surface. Then, although such a sample 70 was left to stand in the air, even if the leaving time passed 48 hours, corrosion of the sample 70 was not observed. In addition, this effect is further enhanced by the action of the passivation film formed on the pattern surface by performing the passivation treatment in addition to the corrosion prevention treatment.

Further, the same results as described above were obtained even when an inert gas such as helium (He), argon (Ar), or a mixed gas of chlorine gas and an inert gas was used as the corrosion preventing gas. In other words, when an inert gas is used as the corrosion preventing gas, for example, the sputtering action is not involved in the chemical reaction and no new deposit is generated. Thus, the same result as in the case of using chlorine gas as the corrosion preventing gas is obtained. As an example, argon gas is used as the corrosion preventing gas, and the corrosion preventing treatment is performed under the following corrosion preventing treatment conditions. The same effects as in the case of using the above chlorine gas as the corrosion preventing gas were obtained.

In this case, since the discharge (corrosion prevention treatment) time is 60 seconds or less, since the removal of the deposit 140 from the sample 70 on which the etching process is completed is insufficient, the discharge (corrosion prevention treatment) time is 60 even if it is short. You need a few seconds. In this case, however, even when the discharge (corrosion preventing treatment) time is 60 seconds or more, the above-described problems when chlorine gas is used as the corrosion preventing gas are less likely to occur.

The same result was obtained even when a mixed gas containing at least 90% of chlorine gas (the remaining gas is a gas other than an inert gas) as the corrosion preventing gas. Here, as the remaining gas added to the chlorine gas with a gas other than the inert gas, a gas having no deposition property, for example, SF, Br, or the like is used. For example, a TiW film is used as a barrier metal on a Si oxide film, which is a lower oxide film as a sample, and a laminate structure film having an Al-Cu alloy film thereon, and a resist is provided on the Al-Cu alloy film. When the sample etched under the same conditions as the etching treatment was subjected to the corrosion treatment by using the Cl + SF mixed gas as the corrosion prevention gas, the same effects as described above were obtained. In this case, the flow rate of gas for preventing corrosion is Cl: 90cc / min, SF: 5cc / min, and other corrosion preventing treatment conditions are the same as those for using chlorine as the gas for preventing corrosion.

Each of the above-described embodiments may be, for example, a sample containing Al, particularly an aluminum film, an aluminum alloy film (for example, 0.5 to 5% Cu-containing aluminum alloy film), or a red worm structure film using the barrier metal or the like. It is especially suitable when a sample is used.

In addition to the above embodiment, ozone may be used to passivate the sample 70 on which the corrosion prevention treatment is completed. In this case, the plasma forming means in the above embodiment is not necessary. Instead, it is necessary to provide means for generating ozone and means for introducing ozone generated by the means into the space 91. When the ozone is irradiated with ultraviolet rays (UV), the film quality of the passivation film formed on the pattern surface becomes more dense and rigid, which is more preferable in preventing corrosion.

In the above embodiment, the following effects are obtained.

(1) Since the wet corrosion protection is not necessary, the time required to complete the corrosion protection of the sample can be greatly shortened, thereby improving the throughput.

(2) In the wet anticorrosion treatment technology, installation of the anticorrosion treatment apparatus and the drying treatment apparatus in the wet method is required, but in this embodiment, since the drying destination apparatus is unnecessary, the apparatus price can be reduced, In addition, the occupied floor area of the apparatus can be narrowed.

(3) Since the waste liquid is not collected and its processing device is unnecessary, the device configuration can be simplified and the cost can be reduced.

(4) Since the etching treatment and the corrosion prevention treatment can be performed in the same processing chamber, the conveyance of the sample from the etching treatment portion to the corrosion treatment portion is unnecessary. Therefore, the time required for the corrosion prevention treatment of the sample can be further shortened and the throughput can be further improved.

(5) Since the etching treatment and the anti-corrosion treatment are performed in the same processing chamber, the apparatus price can be reduced and the dedicated floor area of the apparatus can be narrowed.

(6) The overetching process of the sample using the plasma of the corrosion preventing gas can be performed. In this case, the etching gas and the corrosion preventing gas are switched by the etching completion determination signal from the time control or the etching completion detection means (not shown).

(7) Corrosion prevention treatment of the sample using the plasma of the corrosion prevention gas in the etching process process of the sample using the plasma of the etching gas containing the corrosion prevention gas can be performed. In this case, during the etching treatment period of the sample, alternate switching introduction between the etching gas and the corrosion preventing gas is performed.

In addition, instead of the above embodiment, the above treatment can be carried out by using an apparatus in which the etching treatment space and the corrosion prevention treatment space are separate spaces (that is, two treatment chambers).

In each of the above embodiments, the sample is subjected to the etching treatment by the plasma generated by the magnetic field microwave discharge, and then to the corrosion prevention treatment using the plasma generated by the magnetic field microwave discharge, but the plasma generated by the further discharge. There is no particular limitation on whether or not to use. For example, the sample after the plasma-etching treatment may be subjected to corrosion prevention treatment using plasma generated by a magnetic field high frequency discharge such as direct current discharge, alternating current discharge (high frequency discharge) or magnetron discharge. In addition, the anti-corrosion treatment may be performed using a plasma generated by the magnetic field-free microwave discharge. In this case, it is preferable to apply a bias to the sample to be treated to prevent corrosion.

In addition, the plasma formation of the corrosion preventing gas may be performed using other energy, for example, light energy (photoexcitation), not by discharge.

In each of the above embodiments, the etching gas and the corrosion preventing gas are made to be plasma in the processing chamber. In addition, the etching gas and the corrosion preventing gas are converted into the plasma outside the processing chamber, and the plasma is transported into the processing chamber. You may also In this case, for example, the sample after the plasma-etching treatment is subjected to the corrosion prevention treatment by using a plasma of the corrosion preventing gas generated outside the processing chamber and transported (transported) to the processing chamber. For example, the sample is etched by the plasma of the etching gas generated outside the processing chamber and transported (transported) into the processing chamber, and the etched sample is generated outside the processing chamber and transported (transported) to the processing chamber. Corrosion prevention treatment is performed by using the plasma of corrosion prevention gas.

Moreover, in this invention, metal samples, such as Al, Si, Cu, W, Ti, Mo, or these alloy films or alloy films of these metals and Si, or these films, and high melting | fusing point, such as W and Mo, as a sample in this invention. Samples of metals and their silicide films or laminated structure films of TiN and TiW films can be employed.

As mentioned above, according to this invention, since the wet corrosion prevention process is no longer needed, there exists an effect which can improve the throughput in the process of the sample which requires an etching process and a corrosion prevention process.

Claims (5)

Plasma etching the etching gas, etching the portion of the sample which is not provided with the resist by using the plasma for etching, and deposits formed by the etching treatment of the sample can be removed from the sample. Plasma etching the anti-corrosion gas, the process of corrosion-preventing the sample on which the etching process is completed by using the plasma of the corrosion-preventing gas, plasma-forming the ashing gas of the resist; And a step of ashing the sample having the anti-corrosion treatment completed by using the plasma of the ashing gas. The sample processing method according to claim 1, wherein the transfer of the sample between each treatment and each treatment is performed under vacuum without taking the sample into the atmosphere. A process of ashing a sample having an aluminum film, an aluminum alloy film or a multilayer structure film of these films with a barrier metal using a plasma of halogen gas, and a process of treating the ashed sample using a plasma of chlorine gas; And a step of ashing the sample treated using the plasma of the chlorine gas using the plasma of the oxygen gas. The sample processing method according to claim 3, wherein the etched sample is treated using a plasma of chlorine gas. 4. The sample processing method according to claim 3, wherein the etched sample is treated using a plasma of a gas containing at least 90% of chlorine gas.