JP2695308B2 - パルスレーザビームを用いる基板上の層の形成方法 - Google Patents

パルスレーザビームを用いる基板上の層の形成方法

Info

Publication number
JP2695308B2
JP2695308B2 JP3177985A JP17798591A JP2695308B2 JP 2695308 B2 JP2695308 B2 JP 2695308B2 JP 3177985 A JP3177985 A JP 3177985A JP 17798591 A JP17798591 A JP 17798591A JP 2695308 B2 JP2695308 B2 JP 2695308B2
Authority
JP
Japan
Prior art keywords
lasers
coating material
pulse duration
plasma
density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP3177985A
Other languages
English (en)
Japanese (ja)
Other versions
JPH04232258A (ja
Inventor
オポバー ハンス
クローゼ マンフレート
Original Assignee
ドイチェ フォルシュングスアンシュタルト フュア ルフト―ウント ラウムファールト エー．ファウ．
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ドイチェ フォルシュングスアンシュタルト フュア ルフト―ウント ラウムファールト エー．ファウ． filed Critical ドイチェ フォルシュングスアンシュタルト フュア ルフト―ウント ラウムファールト エー．ファウ．
Publication of JPH04232258A publication Critical patent/JPH04232258A/ja
Application granted granted Critical
Publication of JP2695308B2 publication Critical patent/JP2695308B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP3177985A 1990-07-18 1991-07-18 パルスレーザビームを用いる基板上の層の形成方法 Expired - Fee Related JP2695308B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE40228177 1990-07-18
DE4022817A DE4022817C1 (enExample) 1990-07-18 1990-07-18

Publications (2)

Publication Number Publication Date
JPH04232258A JPH04232258A (ja) 1992-08-20
JP2695308B2 true JP2695308B2 (ja) 1997-12-24

Family

ID=6410504

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3177985A Expired - Fee Related JP2695308B2 (ja) 1990-07-18 1991-07-18 パルスレーザビームを用いる基板上の層の形成方法

Country Status (3)

Country Link
US (1) US5209944A (enExample)
JP (1) JP2695308B2 (enExample)
DE (1) DE4022817C1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4229397C2 (de) * 1992-09-03 1996-11-21 Deutsche Forsch Luft Raumfahrt Vorrichtung zum Abtragen von Material von einem Target
DE4229399C2 (de) * 1992-09-03 1999-05-27 Deutsch Zentr Luft & Raumfahrt Verfahren und Vorrichtung zum Herstellen einer Funktionsstruktur eines Halbleiterbauelements
DE4329268C2 (de) * 1993-05-08 1996-03-07 Deutsche Forsch Luft Raumfahrt Verfahren und Vorrichtung zur Herstellung von Halbleiterschichten
US5558788A (en) * 1993-11-30 1996-09-24 Martin Marietta Energy Systems, Inc. Dual beam optical system for pulsed laser ablation film deposition
US5406906A (en) * 1994-01-18 1995-04-18 Ford Motor Company Preparation of crystallographically aligned films of silicon carbide by laser deposition of carbon onto silicon
NL9401560A (nl) * 1994-09-26 1996-05-01 Rijnhuizen Plasmafysica Werkwijze en inrichting voor het generen van straling en atomaire deeltjes.
AT402945B (de) * 1995-07-03 1997-09-25 Joanneum Research Forschungsge Verfahren und vorrichtung zur beschichtung der oberfläche eines substrats
US5963213A (en) * 1997-05-07 1999-10-05 Olivr Corporation Ltd. Method and system for accelerating warping
US6137110A (en) * 1998-08-17 2000-10-24 The United States Of America As Represented By The United States Department Of Energy Focused ion beam source method and apparatus
DE10252529B3 (de) * 2002-11-08 2004-08-19 Rheinisch-Westfälisch- Technische Hochschule Aachen Handstück für ein ärztliches Behandlungsgerät, dessen Verwendung und Verfahren zur Beschichtung von Oberflächen
US8796151B2 (en) 2012-04-04 2014-08-05 Ultratech, Inc. Systems for and methods of laser-enhanced plasma processing of semiconductor materials

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940090A (enExample) * 1972-08-16 1974-04-15
JPS4953394A (enExample) * 1972-09-25 1974-05-23
JPS5585074A (en) * 1978-12-20 1980-06-26 Nec Corp Control of dispersive quantity of metal fine grain
US4281030A (en) * 1980-05-12 1981-07-28 Bell Telephone Laboratories, Incorporated Implantation of vaporized material on melted substrates
US4701592A (en) * 1980-11-17 1987-10-20 Rockwell International Corporation Laser assisted deposition and annealing
US4757268A (en) * 1985-05-22 1988-07-12 Hughes Aircraft Company Energy scalable laser amplifier
JPS63103031A (ja) * 1986-10-17 1988-05-07 Chiyoe Yamanaka レ−ザ−ウラン濃縮用のウラン原子蒸気発生方法とウラン原子蒸気発生装置及び金属ウランタ−ゲツト体
JPS63161435A (ja) * 1986-12-24 1988-07-05 Hamamatsu Photonics Kk 波長可変レ−ザ装置
JPS63258088A (ja) * 1987-04-15 1988-10-25 Hamamatsu Photonics Kk 波長可変レ−ザ装置
JPS6443917A (en) * 1987-08-07 1989-02-16 Mitsubishi Electric Corp Forming device for superconductive thin film
DD263306A1 (de) * 1987-08-17 1988-12-28 Akad Wissenschaften Ddr Verfahren zur ladungs- und energieselektiven abscheidung von ionen aus laserplasmen
US4987007A (en) * 1988-04-18 1991-01-22 Board Of Regents, The University Of Texas System Method and apparatus for producing a layer of material from a laser ion source
DE3824273A1 (de) * 1988-07-16 1990-01-18 Philips Patentverwaltung Verfahren zur herstellung von festkoerpern
US5015492A (en) * 1989-04-03 1991-05-14 Rutgers University Method and apparatus for pulsed energy induced vapor deposition of thin films
DE3914476C1 (enExample) * 1989-05-02 1990-06-21 Forschungszentrum Juelich Gmbh, 5170 Juelich, De
GB2231587B (en) * 1989-05-11 1993-07-28 Mitsubishi Electric Corp Thin film vacuum evaporation device
JPH03104861A (ja) * 1989-05-26 1991-05-01 Rockwell Internatl Corp レーザアブレーションに使用するための装置
EP0534505B1 (en) * 1989-07-06 1998-12-09 Toyota Jidosha Kabushiki Kaisha Laser deposition method
JPH0347959A (ja) * 1989-07-13 1991-02-28 Semiconductor Energy Lab Co Ltd 有機超伝導薄膜
US5080753A (en) * 1989-12-06 1992-01-14 General Motors Corporation Laser deposition of crystalline boron nitride films
US5019552A (en) * 1990-02-20 1991-05-28 The United States Of America As Represented By The United States Department Of Energy Long-laser-pulse method of producing thin films
US5145713A (en) * 1990-12-21 1992-09-08 Bell Communications Research, Inc. Stoichiometric growth of compounds with volatile components

Also Published As

Publication number Publication date
US5209944A (en) 1993-05-11
DE4022817C1 (enExample) 1991-11-07
JPH04232258A (ja) 1992-08-20

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