JP2674131B2 - Magnetic thin film - Google Patents
Magnetic thin filmInfo
- Publication number
- JP2674131B2 JP2674131B2 JP63226266A JP22626688A JP2674131B2 JP 2674131 B2 JP2674131 B2 JP 2674131B2 JP 63226266 A JP63226266 A JP 63226266A JP 22626688 A JP22626688 A JP 22626688A JP 2674131 B2 JP2674131 B2 JP 2674131B2
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- Prior art keywords
- thin film
- magnetic thin
- magnetic
- film
- composition
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- Thin Magnetic Films (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、磁性薄膜例えば垂直磁気記録媒体に係わ
る。The present invention relates to a magnetic thin film, for example, a perpendicular magnetic recording medium.
本発明による磁性薄膜は、組成式が （Coa Ptb Bc Mδ）100-xOx （但し、a,b,c,δ,xは原子％） なる組成式で示され、その組成範囲が、 ０＜ａ＝100−ｂ−ｃ−δ ０≦ｂ≦50 0.1≦ｃ≦30 ０＜δ≦30 ０≦ｘ≦15 であり、Ｍが、Ti,Zr,V,Cr,Nb,Mo,Ta,W,Fe,Ni,Si,Al,G
e,Ga,In,Sn,Pb,Sb,Bi,P,Se,C,Zn,Cu,Ag,Au,Ru,Pd,Reの
中から一種以上である磁性薄膜を構成することによって
高い垂直保磁力Hc⊥ないしは高飽和磁束密度を有し、高
い垂直磁気異方性を保持した垂直磁気記録媒体として好
適な磁性薄膜を得る。The magnetic thin film according to the present invention is represented by a composition formula of (Coa Ptb Bc Mδ) 100-x O x (where a, b, c, δ, x are atomic%), and the composition range is 0 <A = 100-b-c-δ 0 ≤ b ≤ 50 0.1 ≤ c ≤ 30 0 <δ ≤ 30 0 ≤ x ≤ 15, and M is Ti, Zr, V, Cr, Nb, Mo, Ta, W, Fe, Ni, Si, Al, G
High perpendicularity protection is achieved by constructing a magnetic thin film of one or more of e, Ga, In, Sn, Pb, Sb, Bi, P, Se, C, Zn, Cu, Ag, Au, Ru, Pd, Re. A magnetic thin film suitable for a perpendicular magnetic recording medium having a magnetic force Hc⊥ or a high saturation magnetic flux density and maintaining a high perpendicular magnetic anisotropy is obtained.
従来の薄膜磁気記録媒体として用いられる磁性薄膜
の、等方性、すなわち面内磁化による磁性薄膜として
は、CoNi,CoP,CoPt等の合金磁性薄膜が知られている。
これらCoNi及びCoPによる各磁性薄膜は、柱状構造を利
用した硬磁気特性で、その飽和磁束密度Bsは約10kG,保
磁力Hcは、約１（kOe）ないしはそれ以下である。ま
た、CoPt磁性薄膜については、例えば特開昭58−200513
号公報にその開示があるが、この場合、その膜厚が300
Å以下においては1.5（kOe）以上に及び高い保磁力Hcを
示すものの、その膜厚が大となると、Bsは10kG前後で、
Hcは高々700（Oe）である。As a magnetic thin film using isotropic, ie, in-plane magnetization, a magnetic thin film used as a conventional thin film magnetic recording medium, alloy magnetic thin films such as CoNi, CoP, and CoPt are known.
Each of the magnetic thin films of CoNi and CoP has a hard magnetic property utilizing a columnar structure, and has a saturation magnetic flux density Bs of about 10 kG and a coercive force Hc of about 1 (kOe) or less. For CoPt magnetic thin films, see, for example, JP-A-58-200513.
In the case where the film thickness is 300
Below Å, the coercive force Hc is as high as 1.5 (kOe) or more, but when the film thickness becomes large, Bs is around 10 kG,
Hc is at most 700 (Oe).
また、一方垂直磁化による磁性薄膜としては、CoCr,C
oMo,CoV,CoRu等の合金磁性薄膜が知られている。この場
合、これら合金のうち、最も磁気特性の優れているCoCr
系についてその代表的な磁気特性をみると、Bsが４（k
G）〜６（kG）であり、垂直保磁力Hc⊥は、この合金膜
のスパッタリング等の被着成膜時の基板温度が150℃の
加熱の場合は、約1.5（kOe）に及ぶ値を示すものの、そ
の成膜時の基板温度が、室温程度である場合は、約300
（Oe）である。そして、垂直方向の角型比（Mr/Ms）⊥
は約0.2,異方性磁界HKは約４〜６（kOe）である。この
場合、そのBsが比較的低いという課題と共にそのHc
⊥は、成膜時の基板温度を高くしないと高い値を得るこ
とができないことから、その基板としては耐熱性の低い
安価なポリエチレンテレフタレート（PET）基板を用い
ることができないという課題がある。On the other hand, as a magnetic thin film by perpendicular magnetization, CoCr, C
Alloy magnetic thin films of oMo, CoV, CoRu and the like are known. In this case, CoCr, which has the best magnetic properties among these alloys,
Looking at the typical magnetic properties of the system, Bs is 4 (k
G) to 6 (kG), and the vertical coercive force Hc ⊥ reaches a value of about 1.5 (kOe) when the substrate temperature during deposition of the alloy film such as sputtering is 150 ° C. However, if the substrate temperature at the time of film formation is about room temperature, about 300
(Oe). And the squareness ratio in the vertical direction (Mr / Ms) ⊥
Is about 0.2 and the anisotropic magnetic field H K is about 4 to 6 (kOe). In this case, the Hc
Since a high value cannot be obtained for ⊥ unless the substrate temperature during film formation is raised, there is a problem that an inexpensive polyethylene terephthalate (PET) substrate having low heat resistance cannot be used as the substrate.
本発明は上述の課題を解決して成膜時の基板温度を高
める必要があるとか、充分な飽和磁束密度或いは（及
び）高い保磁力を有する磁性薄膜を提供する。The present invention solves the above-mentioned problems and provides a magnetic thin film which needs to raise the substrate temperature during film formation and has a sufficient saturation magnetic flux density and / or a high coercive force.
本発明は、CoPtB系合金、ないしはCoB系合金によるも
のであり、特に、 （Coa Ptb Bc Ｍδ）100-xOx （但し、a,b,c,δ,xは原子％） なる組成式で示され、その組成範囲が、 ０＜ａ＝100−ｂ−ｃ−δ ０≦ｂ≦50 0.1≦ｃ≦30 ０＜δ≦30 ０≦ｘ≦15 であって、上記ＭはTi,Zr,V,Cr,Nb,Mo,Ta,W,Fe,Ni,Si,A
l,Ge,Ga,In,Sn,Pb,Sb,Bi,P,Se,C,Zn,Cu,Ag,Au,Ru,Pd,Re
の中から一種以上である組成の磁性薄膜を構成する。The present invention is based on a CoPtB-based alloy or a CoB-based alloy, and in particular, has a composition formula of (Coa Ptb Bc Mδ) 100-x O x (where a, b, c, δ, x are atomic%). The composition range is 0 <a = 100-b-c-δ 0 ≦ b ≦ 50 0.1 ≦ c ≦ 30 0 <δ ≦ 300 0 ≦ x ≦ 15, and M is Ti, Zr, V, Cr, Nb, Mo, Ta, W, Fe, Ni, Si, A
l, Ge, Ga, In, Sn, Pb, Sb, Bi, P, Se, C, Zn, Cu, Ag, Au, Ru, Pd, Re
A magnetic thin film having a composition of at least one of the above.
本発明による磁性薄膜は、成膜時の基板温度を高める
ことなくまた比較的厚い膜厚でも高い保磁力Hc,ないし
は高い飽和磁束密度，高い異方性磁界を得ることがで
き、垂直磁化膜として用いて好適な特性を呈する。The magnetic thin film according to the present invention can obtain a high coercive force Hc, a high saturation magnetic flux density, and a high anisotropic magnetic field without increasing the substrate temperature at the time of film formation and even with a relatively thick film. Used to exhibit suitable properties.
スライドガラス基板上に、マグネトロン型スパッタ装
置によって磁性薄膜を作製する。そのスパッタ条件は、
例えば とした。この場合のターゲットは、直径４インチ，厚さ
3mmのCoBM系の合金ターゲット上にその中心から、所要
の広がり角を有する厚さ1mmのPtの扇形チップを３枚か
ら６枚置いたターゲットを用いる。或いは例えば直径４
インチ，厚さ3mmのCoBMPt系合金ターゲットを用いる。A magnetic thin film is formed on a slide glass substrate by a magnetron type sputtering apparatus. The sputtering conditions are:
For example And The target in this case is 4 inches in diameter and is thick
A target in which 3 to 6 Pt fan-shaped chips with a thickness of 1 mm having a required spread angle are placed on a 3 mm CoBM alloy target from its center is used. Or, for example, diameter 4
An inch, 3 mm thick CoBMPt-based alloy target is used.
実施例１ 複合ターゲットを用い前記スパッタ方法及び条件でCo
71Pt20B7Ti2の磁性薄膜を作製した。しかしながら、こ
の場合、スパッタの開始に先立って行われるスパッタ室
内の排気によって得るバックグラウンド真空度PBGを変
えた。そして各バックグラウンド真空度PBGでのそれぞ
れ得られた磁性薄膜Co71Pt20B7Ti2中の酸素濃度を測定
した。また、この各PBGに等価な酸素分圧を、磁性薄膜
中の酸素濃度との対応によって求めた。これらを、表１
に示す。Example 1 Co sputtering was performed using the composite target under the above-described sputtering method and conditions.
A magnetic thin film of 71 Pt 20 B 7 Ti 2 was prepared. However, in this case, the background vacuum degree P BG obtained by exhausting the inside of the sputtering chamber prior to the start of sputtering was changed. Then, the oxygen concentration in each of the obtained magnetic thin films Co 71 Pt 20 B 7 Ti 2 at each background vacuum degree P BG was measured. Further, the oxygen partial pressure equivalent to each of the PBGs was determined by corresponding to the oxygen concentration in the magnetic thin film. These are shown in Table 1.
Shown in
この実施例においては、Co71Pt20B7Ti2膜についての
膜中の酸素濃度と、PBG及びPO2との関係をみたものであ
るが、他の組成のCoPtB系の磁性薄膜についても、これ
の酸素濃度と、PBG及びPO2の関係は殆んど同等の関係と
なった。 In this example, the oxygen concentration in the film for the Co 71 Pt 20 B 7 Ti 2 film and the relationship between P BG and P O2 were observed, but also for CoPtB-based magnetic thin films of other compositions. , And the oxygen concentration and P BG and P O2 were almost the same.
実施例２ 前記スパッタ方法及び条件でPBG＝４μTorrとして、
各種合金ターゲット上にPtチップを載せた複合ターゲッ
トを用いて各種組成の磁性薄膜を作製した。第１図Ａ〜
Ｃにごれら各磁性薄膜についての使用したターゲット、
つまり、使用した合金ターゲットの組成（原子％）と、
これの上に配置したPt扇形チップのターゲット全体の表
面積に対して占める割合（％）と、得られた薄膜の組成
と、膜厚と、各磁気特性Hc⊥,Hc,HK ⊥,HK,4πMs,Mr
⊥/Hrの測定結果を示す。尚、これら各磁気特性は、
第２図にその面内磁化曲線と垂直磁化曲線のモデル図上
で示した各値、つまり、垂直保磁力Hc⊥，面内保磁力Hc
，異方性磁界HK ⊥,HK，飽和磁束密度４πMs,残留磁
化比Mr⊥/Mrの測定結果である。尚、このようにして
得た磁性薄膜中には、実施例１による表１から明らかな
ように、酸素が4.2〜10.7原子％含まれる。Example 2 P BG = 4 μTorr under the above sputtering method and conditions,
Magnetic thin films of various compositions were prepared using a composite target in which a Pt chip was mounted on various alloy targets. FIG. 1A-
Target used for each magnetic thin film
In other words, the composition (atomic%) of the alloy target used,
The ratio (%) of the Pt fan-shaped chip placed on this to the total surface area of the target, the composition of the obtained thin film, the film thickness, and the respective magnetic properties Hc ⊥ , Hc, H K ⊥ , H K , 4πMs, Mr
The measurement result of ⊥ / Hr is shown. Each of these magnetic characteristics is
Each value shown in the model diagram of the in-plane magnetization curve and the perpendicular magnetization curve in Fig. 2, namely, the perpendicular coercive force Hc ⊥ , the in-plane coercive force Hc
, The anisotropic magnetic fields H K ⊥ , H K , the saturation magnetic flux density 4πMs, and the residual magnetization ratio Mr ⊥ / Mr. The magnetic thin film thus obtained contains oxygen in an amount of 4.2 to 10.7 atomic%, as is clear from Table 1 of Example 1.
実施例３ 厚さ5000Åの（Co71Pt20B7Ti2）95O5の組成による磁
性薄膜を作製した。この場合の磁束Ｂ−磁界Ｈ曲線を第
３図に示す。同図中実線曲線は垂直方向のＭ−Ｈ曲線，
破線曲線は面内方向のＭ−Ｈ曲線を示す。Example 3 A magnetic thin film having a composition of (Co 71 Pt 20 B 7 Ti 2 ) 95 O 5 having a thickness of 5000 Å was prepared. The magnetic flux B-magnetic field H curve in this case is shown in FIG. In the figure, the solid curve is the vertical MH curve,
The broken line curve indicates the in-plane MH curve.
尚、上述したところにおいて磁気特性は、試料振動型
磁力計によって測定されたものであり、膜組成は電子線
プローブマイクロアナリシス（EPMA）と、IPC（Inducti
vely Coupled Plasma Analysis）発光分析の併用により
測定し、表１の膜中の酸素濃度は、酸素ドース量の明確
な標準試料との比較で２次イオン質量分析SIMS（Second
ary Ion Mass Spectrometer）法とEPMA法とを併用して
測定した。In the above description, the magnetic characteristics were measured by a sample vibration magnetometer, and the film composition was determined by electron probe microanalysis (EPMA) and IPC (Inducti
Vely Coupled Plasma Analysis) was measured in combination with emission spectrometry. The oxygen concentration in the film shown in Table 1 was compared with that of a standard sample having a clear oxygen dose by secondary ion mass spectrometry SIMS (Second
ary Ion Mass Spectrometer) method and EPMA method were used together.
尚、上述の各実施例においては、基板としてスライド
ガラス板を用いた場合であるが、そのほかポリイミド樹
脂基板，結晶化ガラス基板を始めとして、PET基板等各
種基板を用いることもできる。In each of the above-mentioned embodiments, a slide glass plate is used as the substrate, but other various substrates such as a polyimide resin substrate and a crystallized glass substrate may be used.
上述の本発明による磁性薄膜は、成膜時の基板温度を
高めることなく、また、第１図でわかるように例えば50
00Å（500nm）近傍もしくはそれ以上の膜厚において
も、高いHc⊥,4πMsを示す磁性薄膜を得ることができ
た。The magnetic thin film according to the present invention described above does not increase the substrate temperature during film formation, and as shown in FIG.
Magnetic films with high Hc ⊥ and 4πMs could be obtained even at film thickness near 00 Å (500 nm) or more.
更にまた、室温程度での成膜が可能であることから、
PET等の低廉な基板を用いることができるなど、実用上
大きな利益を有する。Furthermore, since film formation at about room temperature is possible,
It has a great practical benefit, such as the use of inexpensive substrates such as PET.
第１図Ａ〜Ｃはそれぞれ本発明による磁性薄膜の各組成
に対する磁気特性の測定結果を示す表図、第２図はその
説明に供するＭ−Ｈモデル図、第３図は本発明による磁
性薄膜の一例のＭ−Ｈ曲線図である。1A to 1C are charts showing the measurement results of the magnetic characteristics for each composition of the magnetic thin film according to the present invention, FIG. 2 is an MH model diagram used for the explanation, and FIG. 3 is a magnetic thin film according to the present invention. It is an MH curve figure of an example.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 阿蘇 興一 東京都品川区北品川６丁目７番35号 ソ ニー株式会社内 (56)参考文献 特開 平１−214002（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Koichi Aso, 6-7-35, Kita-Shinagawa, Shinagawa-ku, Tokyo, Sony Corporation (56) Reference JP-A 1-214002 (JP, A)
Claims (1)
In,Sn,Pb,Sb,Bi,P,Se,C,Zn,Cu,Ag,Au,Ru,Pd,Reの中から
一種以上 であることを特徴とする磁性薄膜。1. A compositional formula of (Coa Ptb Bc Mδ) 100-x O x (where a, b, c, δ, x are atomic%), and the composition range is 0 <a = 100- b-c-δ 0 <b ≤ 50 0.1 ≤ c ≤ 30 0 <δ ≤ 300 0 ≤ x ≤ 15, where M is Ti, Zr, V, Cr, Nb, Mo, Ta, W, Fe, Ni, Si, Al, Ge, Ga,
A magnetic thin film comprising one or more of In, Sn, Pb, Sb, Bi, P, Se, C, Zn, Cu, Ag, Au, Ru, Pd, Re.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63226266A JP2674131B2 (en) | 1988-09-09 | 1988-09-09 | Magnetic thin film |
| DE68925045T DE68925045T2 (en) | 1988-02-22 | 1989-02-20 | Magnetic record carrier |
| EP89102895A EP0330116B1 (en) | 1988-02-22 | 1989-02-20 | Magnetic recording medium |
| KR1019890001965A KR970007795B1 (en) | 1988-02-22 | 1989-02-20 | Magnetio recording medium |
| HK98106793A HK1007625A1 (en) | 1988-02-22 | 1998-06-25 | Magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63226266A JP2674131B2 (en) | 1988-09-09 | 1988-09-09 | Magnetic thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0273510A JPH0273510A (en) | 1990-03-13 |
| JP2674131B2 true JP2674131B2 (en) | 1997-11-12 |
Family
ID=16842513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63226266A Expired - Fee Related JP2674131B2 (en) | 1988-02-22 | 1988-09-09 | Magnetic thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2674131B2 (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4236946A (en) * | 1978-03-13 | 1980-12-02 | International Business Machines Corporation | Amorphous magnetic thin films with highly stable easy axis |
| JPS61234514A (en) * | 1985-04-11 | 1986-10-18 | Fujitsu Ltd | Formation of magnetic material |
| JPS62132223A (en) * | 1985-12-04 | 1987-06-15 | Sumitomo Metal Mining Co Ltd | Magnetic recording medium |
| JPS62209715A (en) * | 1986-03-11 | 1987-09-14 | Nippon Mining Co Ltd | Magnetic recording medium and its production |
-
1988
- 1988-09-09 JP JP63226266A patent/JP2674131B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0273510A (en) | 1990-03-13 |
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