JP2670020B2 - 照明ユニット - Google Patents
照明ユニットInfo
- Publication number
- JP2670020B2 JP2670020B2 JP6296687A JP29668794A JP2670020B2 JP 2670020 B2 JP2670020 B2 JP 2670020B2 JP 6296687 A JP6296687 A JP 6296687A JP 29668794 A JP29668794 A JP 29668794A JP 2670020 B2 JP2670020 B2 JP 2670020B2
- Authority
- JP
- Japan
- Prior art keywords
- lighting
- illumination
- housing
- lighting unit
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005855 radiation Effects 0.000 claims description 58
- 238000005286 illumination Methods 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 38
- 239000002245 particle Substances 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 8
- 238000003384 imaging method Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000002826 coolant Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 41
- 239000003570 air Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 8
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 8
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000008021 deposition Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000012080 ambient air Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000000112 cooling gas Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000010438 granite Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
Landscapes
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BE9301333A BE1007851A3 (nl) | 1993-12-03 | 1993-12-03 | Belichtingseenheid met een voorziening tegen vervuiling van optische componenten en een fotolithografisch apparaat voorzien van een dergelijke belichtingseenheid. |
BE09301333 | 1993-12-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH07201728A JPH07201728A (ja) | 1995-08-04 |
JP2670020B2 true JP2670020B2 (ja) | 1997-10-29 |
Family
ID=3887602
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6296687A Expired - Fee Related JP2670020B2 (ja) | 1993-12-03 | 1994-11-30 | 照明ユニット |
Country Status (6)
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6819396B1 (en) | 1999-11-16 | 2004-11-16 | Canon Kabushiki Kaisha | Exposure apparatus, and device manufacturing method |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3094902B2 (ja) * | 1996-03-27 | 2000-10-03 | ウシオ電機株式会社 | 紫外線照射装置 |
KR100267155B1 (ko) | 1996-09-13 | 2000-10-16 | 아끼구사 나오유끼 | 반도체 장치의 제조 방법 및 제조 장치 |
JPH10116766A (ja) | 1996-10-11 | 1998-05-06 | Canon Inc | 露光装置及びデバイス製造方法 |
AU7552498A (en) * | 1997-06-10 | 1998-12-30 | Nikon Corporation | Optical device, method of cleaning the same, projection aligner, and method of producing the same |
US5973764A (en) * | 1997-06-19 | 1999-10-26 | Svg Lithography Systems, Inc. | Vacuum assisted debris removal system |
JP4534260B2 (ja) * | 1997-07-22 | 2010-09-01 | 株式会社ニコン | 露光方法、露光装置、その製造方法及び光洗浄方法 |
WO1999010717A1 (en) | 1997-08-22 | 1999-03-04 | Morlock Richard C | Sensor housing for uv curing chamber |
US6313953B1 (en) * | 1999-01-15 | 2001-11-06 | Donaldson Company, Inc. | Gas chemical filtering for optimal light transmittance; and methods |
DE10109031A1 (de) * | 2001-02-24 | 2002-09-05 | Zeiss Carl | Optisches Strahlführungssystem und Verfahren zur Kontaminationsverhinderung optischer Komponenten hiervon |
US6732856B2 (en) * | 2001-02-27 | 2004-05-11 | Maryland Wire Belts, Inc. | Modular conveyor belt |
KR100607179B1 (ko) * | 2004-05-28 | 2006-08-01 | 삼성전자주식회사 | 웨이퍼 에지 노광장치 |
US7381950B2 (en) * | 2004-09-29 | 2008-06-03 | Texas Instruments Incorporated | Characterizing dimensions of structures via scanning probe microscopy |
JP2006222130A (ja) * | 2005-02-08 | 2006-08-24 | Nsk Ltd | 露光装置 |
US8507879B2 (en) * | 2006-06-08 | 2013-08-13 | Xei Scientific, Inc. | Oxidative cleaning method and apparatus for electron microscopes using UV excitation in an oxygen radical source |
US20070284541A1 (en) * | 2006-06-08 | 2007-12-13 | Vane Ronald A | Oxidative cleaning method and apparatus for electron microscopes using UV excitation in a oxygen radical source |
NL1032674C2 (nl) * | 2006-10-13 | 2008-04-15 | Stichting Fund Ond Material | Stralingsbron voor elektromagnetische straling met een golflengte in het extreem ultraviolet (XUV) golflengtegebied. |
US8349125B2 (en) * | 2009-07-24 | 2013-01-08 | Xei Scientific, Inc. | Cleaning device for transmission electron microscopes |
US9453801B2 (en) | 2012-05-25 | 2016-09-27 | Kla-Tencor Corporation | Photoemission monitoring of EUV mirror and mask surface contamination in actinic EUV systems |
US9662688B2 (en) | 2012-07-09 | 2017-05-30 | Kla-Tencor Corporation | Apparatus and method for cross-flow purge for optical components in a chamber |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3949258A (en) | 1974-12-05 | 1976-04-06 | Baxter Laboratories, Inc. | Method and means for suppressing ozone generated by arc lamps |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4485123A (en) * | 1982-02-12 | 1984-11-27 | Union Carbide Corporation | Process for producing textured coatings |
JPS59178646U (ja) * | 1983-05-16 | 1984-11-29 | シャープ株式会社 | 露光装置 |
US5079187A (en) * | 1987-12-07 | 1992-01-07 | The Regents Of The University Of California | Method for processing semiconductor materials |
US5235995A (en) * | 1989-03-27 | 1993-08-17 | Semitool, Inc. | Semiconductor processor apparatus with dynamic wafer vapor treatment and particulate volatilization |
JP2783575B2 (ja) * | 1989-02-10 | 1998-08-06 | キヤノン株式会社 | 回路製造のための露光方法及び露光装置 |
NL8900991A (nl) * | 1989-04-20 | 1990-11-16 | Asm Lithography Bv | Apparaat voor het afbeelden van een maskerpatroon op een substraat. |
NL9000503A (nl) * | 1990-03-05 | 1991-10-01 | Asm Lithography Bv | Apparaat en werkwijze voor het afbeelden van een maskerpatroon op een substraat. |
DE4022981A1 (de) * | 1990-07-19 | 1992-01-23 | Philips Patentverwaltung | Verfahren zur reduktion des farbkantenflackerns in farbfernsehsignalen |
NL9100215A (nl) * | 1991-02-07 | 1992-09-01 | Asm Lithography Bv | Inrichting voor het repeterend afbeelden van een maskerpatroon op een substraat. |
NL9100410A (nl) * | 1991-03-07 | 1992-10-01 | Asm Lithography Bv | Afbeeldingsapparaat voorzien van een focusfout- en/of scheefstandsdetectie-inrichting. |
US5166530A (en) * | 1991-12-20 | 1992-11-24 | General Signal Corporation | Illuminator for microlithographic integrated circuit manufacture |
US5387800A (en) * | 1992-08-19 | 1995-02-07 | Dymax Corporation | Prefocused lamp and reflector assembly |
-
1993
- 1993-12-03 BE BE9301333A patent/BE1007851A3/nl not_active IP Right Cessation
-
1994
- 1994-11-22 TW TW083110824A patent/TW289835B/zh active
- 1994-11-29 DE DE69410428T patent/DE69410428T2/de not_active Expired - Fee Related
- 1994-11-29 EP EP94203455A patent/EP0663618B1/en not_active Expired - Lifetime
- 1994-11-29 US US08/346,978 patent/US5508528A/en not_active Expired - Lifetime
- 1994-11-30 JP JP6296687A patent/JP2670020B2/ja not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3949258A (en) | 1974-12-05 | 1976-04-06 | Baxter Laboratories, Inc. | Method and means for suppressing ozone generated by arc lamps |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6819396B1 (en) | 1999-11-16 | 2004-11-16 | Canon Kabushiki Kaisha | Exposure apparatus, and device manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
BE1007851A3 (nl) | 1995-11-07 |
DE69410428T2 (de) | 1998-11-26 |
TW289835B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1996-11-01 |
DE69410428D1 (de) | 1998-06-25 |
US5508528A (en) | 1996-04-16 |
EP0663618B1 (en) | 1998-05-20 |
JPH07201728A (ja) | 1995-08-04 |
EP0663618A1 (en) | 1995-07-19 |
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