JP2664744B2 - Aluminum nitride thin film circuit board - Google Patents
Aluminum nitride thin film circuit boardInfo
- Publication number
- JP2664744B2 JP2664744B2 JP27793188A JP27793188A JP2664744B2 JP 2664744 B2 JP2664744 B2 JP 2664744B2 JP 27793188 A JP27793188 A JP 27793188A JP 27793188 A JP27793188 A JP 27793188A JP 2664744 B2 JP2664744 B2 JP 2664744B2
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- Prior art keywords
- layer
- thin film
- aln
- circuit board
- film conductor
- Prior art date
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Description
【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） 本発明は、窒化アルミニウム（AlN）薄膜回路基板に
関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to an aluminum nitride (AlN) thin film circuit board.
（従来の技術） 従来、半導体モジュールに使用される薄膜回路基板の
基材としては、アルミナが主に用いられている。しかし
ながら、実装される能動素子の性能向上に伴って稼働時
の素子からの発熱量が増大する傾向にあり、アルミナの
熱伝導率では能動素子の実装個数が制約されるという問
題があった。(Prior Art) Conventionally, alumina is mainly used as a base material of a thin film circuit board used for a semiconductor module. However, the amount of heat generated from the active element during operation tends to increase with the improvement in the performance of the mounted active element, and there has been a problem that the thermal conductivity of alumina limits the number of mounted active elements.
このようなことから、アルミナに代わり高熱伝導率を
もつBeOを基材とした薄膜回路基板が使用されてきた
が、かかるBeOは製造時、研磨時の毒性が強いため、基
材としての応用範囲が限定される。このため、代替材料
としてAlNが広く用いられている。このAlNは、無害であ
り、製造、部品化、廃棄の制約がないという利点を持
ち、特に熱伝導率が70〜280W/m・Ｋの広い範囲、つまり
放熱性がアルミナの3.5倍から場合によってはBeOより優
れたレベルまで調整可能であるため、アルミナ基材を用
いた薄膜回路基板に比べて高い実装密度を実現できるば
かりか、能動素子の高密度化に合せて所望の熱伝導性を
付与できれる利点を有する。かかるAlN基材を用いた薄
膜回路基板では、従来よりAlN基材上にTi下地層を介し
てNi/Au薄膜導体層、Ti下地層を介してPt/Au薄膜導体
層、又はCr下地層を介してCu/Au薄膜導体層を形成した
構造のものが知られている。しかしながら、かかる構造
の回路基板では薄膜導体層とAlN基材との密着強度が不
充分であるため、基材表面から薄膜導体層が剥離した
り、断線する欠点があった。また、AlN基材は結晶方位
によりエッチング速度が異なり、結晶方位の異なる粒界
に段差が生じるため、前記基材に対する薄膜導体層の密
着強度が不充分であると、該薄膜導体層が段差上で断線
を生じる問題があった。For this reason, instead of alumina, thin-film circuit boards based on BeO, which has a high thermal conductivity, have been used.However, such BeO is highly toxic during manufacturing and polishing. Is limited. For this reason, AlN is widely used as an alternative material. This AlN is harmless and has the advantage that there is no restriction on production, parts conversion, and disposal.Especially, the thermal conductivity is in a wide range of 70 to 280 W / mK, that is, the heat dissipation is 3.5 times higher than that of alumina. Can be adjusted to a level superior to BeO, so not only can a higher mounting density be achieved than a thin-film circuit board using an alumina base material, but also the desired thermal conductivity can be provided in accordance with the higher density of active elements There are advantages that can be achieved. In a thin film circuit board using such an AlN substrate, conventionally, a Ni / Au thin film conductor layer via a Ti underlayer, a Pt / Au thin film conductor layer via a Ti underlayer, or a Cr underlayer on an AlN substrate. A structure having a structure in which a Cu / Au thin film conductor layer is formed via a thin film is known. However, the circuit board having such a structure has a disadvantage that the thin film conductor layer is peeled off or disconnected from the surface of the substrate because the adhesion strength between the thin film conductor layer and the AlN substrate is insufficient. In addition, since the etching rate of the AlN base material varies depending on the crystal orientation, and a step occurs at a grain boundary having a different crystal orientation, if the adhesion strength of the thin-film conductor layer to the base material is insufficient, the thin-film conductor layer may rise over the step. There was a problem that disconnection occurred.
（発明が解決しようとする課題） 本発明は、上記従来の課題を解決するためになされた
もので、AlN基材への薄膜導体層の密着強度を向上し、
温度サイクル時での剥離や断線を防止し得るAlN薄膜回
路基板を提供しようとするものである。(Problems to be Solved by the Invention) The present invention has been made in order to solve the above-mentioned conventional problems, and has improved the adhesion strength of a thin film conductor layer to an AlN base material,
An object of the present invention is to provide an AlN thin film circuit board which can prevent peeling and disconnection during a temperature cycle.
［発明の構成］ （課題を解決するための手段） 本発明は、窒化アルミニウム基材上にTiN層及びTi層
を順次積層した下地層、又はCrN層及びCr層を順次積層
した下地層を介して薄膜導体層を設けたことを特徴とす
る窒化アルミニウム薄膜回路基板である。[Constitution of the Invention] (Means for Solving the Problems) The present invention is directed to an underlayer in which a TiN layer and a Ti layer are sequentially laminated on an aluminum nitride base material, or an underlayer in which a CrN layer and a Cr layer are sequentially laminated. An aluminum nitride thin-film circuit board characterized in that a thin-film conductor layer is provided.
上記下地層の構成材料であるAlN基材側に配置される
下層のTiN層又はCrN層は該基材に対する密着性を高める
作用をなし、上層のTi層又はCr層は前記TiN層又はCrN層
と前記薄膜導体層との密着性を高める作用を有する。か
かる下地層中の下層（TiN層又はCrN層）の厚さについて
は、５〜500nmとすることが望ましい。この理由は、該
下層の厚さを5nm未満にするとAlN基材に対する均一な密
着強度を得ることが困難となり、かといってその厚さが
500nmを越えるとパターニングのためのエッチングによ
る除去が困難となるからである。前記下地層の上層（Ti
層又はCr）の厚さについては10〜900nmとすることが望
ましい。この理由は、上層の厚さを10nm未満にするとTi
N層又はCrN層との充分な化学反応性が得難く、充分な密
着強度を達成できなくなる恐れがあり、かといってその
厚さが900nmを越えるとその内部応力のために基材から
剥離し易くなる恐れがあるからである。また、前記下層
であるTiN層又はCrN層には酸素が0.02〜30at％の範囲で
含有されていることが望ましい。この理由は、含有され
る酸素量を0.02at％未満にするとAlN基材と上層であるT
i層又はCr層とに対する化学反応性を充分に高めること
が困難となり、強固な密着力を付与し難く、かといって
酸素量が30atm％を越えるとAlN基材と上層であるTi層又
はCr層との間でのAl2O3含有量が多くなり、薄膜導体層
が基材から剥離し易くなるからである。The lower TiN layer or CrN layer disposed on the AlN substrate side, which is a constituent material of the underlayer, acts to increase the adhesion to the substrate, and the upper Ti layer or Cr layer is the TiN layer or CrN layer. Has the effect of increasing the adhesion between the film conductor layer and the thin film conductor layer. The thickness of the lower layer (TiN layer or CrN layer) in the underlayer is desirably 5 to 500 nm. The reason is that if the thickness of the lower layer is less than 5 nm, it is difficult to obtain a uniform adhesion strength to the AlN substrate, but the thickness is rather small.
If the thickness exceeds 500 nm, removal by etching for patterning becomes difficult. The upper layer (Ti
The thickness of the layer (Cr) is preferably 10 to 900 nm. The reason for this is that if the thickness of the upper layer is
It is difficult to obtain sufficient chemical reactivity with the N layer or CrN layer, and it may not be possible to achieve sufficient adhesion strength.However, if the thickness exceeds 900 nm, it peels off from the substrate due to its internal stress. This is because there is a possibility that it becomes easy. It is preferable that the lower TiN layer or CrN layer contains oxygen in a range of 0.02 to 30 at%. The reason for this is that if the oxygen content is less than 0.02 at%, the AlN substrate and the upper layer T
It is difficult to sufficiently increase the chemical reactivity with the i-layer or the Cr layer, and it is difficult to provide strong adhesion. However, if the oxygen content exceeds 30 atm%, the AlN substrate and the upper Ti or Cr layer This is because the content of Al 2 O 3 between the thin film conductor layer and the layer increases, and the thin film conductor layer easily peels off from the base material.
上記薄膜導体層としては、例えばNi/Au、Cu/Au、Ni/P
d、Ni/Pd/Au、Pt/Au等を挙げることができる。As the thin film conductor layer, for example, Ni / Au, Cu / Au, Ni / P
d, Ni / Pd / Au, Pt / Au and the like.
なお、回路基板を多層薄膜導体層構造とする場合に
は、一層目の薄膜導体層を含むAlN基材上に該AlNと同組
成のAlNからなる誘電体層を形成し、この上に下地層を
介して二層目の薄膜導体層を形成することによって実現
される。When the circuit board has a multilayer thin-film conductor layer structure, a dielectric layer made of AlN having the same composition as AlN is formed on an AlN base material including the first thin-film conductor layer, and an underlayer is formed thereon. This is realized by forming a second thin-film conductor layer through the substrate.
次に、本発明のAlN薄膜回路基板の製造方法を簡単に
説明する。Next, a method for manufacturing an AlN thin film circuit board of the present invention will be briefly described.
まず、所望の熱伝導率を有し、表面粗さが下地層や薄
膜導体層を形成するのに適した値をもつAlN基材を用意
する。表面粗さの調節は、焼結AlN基材の研磨もしくは
サブミクロン粒子を原料として製造された焼結AlN基材
を用いることにより達成できる。First, an AlN base material having a desired thermal conductivity and a surface roughness having a value suitable for forming an underlayer or a thin-film conductor layer is prepared. Adjustment of the surface roughness can be achieved by polishing the sintered AlN substrate or using a sintered AlN substrate manufactured using submicron particles as a raw material.
次いで、前記基材上にTiN層又はCiN層を真空蒸着法、
スパッタ蒸着法等の一般的な成膜技術により形成する。
この時、必要に応じて基材温度、雰囲気、真空度、成膜
速度を調整する。TiN層又はCrN層の成膜に先だって基材
表面を湿式洗浄法、逆スパッタ法などで充分な洗浄を行
なうが、AlN基材は強酸、強アルカリに対して不安定で
あるため、洗浄液の選定に注意が必要で、通常中性洗浄
液を用いることが望ましい。また、TiN層又はCrN層中に
含有させる酸素は成膜雰囲気、成膜材料の純度等により
調整する。つづいて、真空を破らずにTi層又はCr層を形
成する。ひきつづき、真空を破らずに上述した材料から
なる薄膜導体材料層を連続して形成する。この後、これ
らの層をレジストを用いたフォトエッチング技術により
パターニングすることにより、第１図に示すようにAlN
基材１上にTiN層（又はCrN層）２及びTi層（又はCr層）
３を順次積層した下地層を介して薄膜導体層４を形成し
てAlN薄膜回路基板を製造する。このフォトエッチング
時には、Au層はKI＋I2＋脱イオン水のエッチャント、Ni
層はCuSO4＋HCl＋エチルアルコール＋脱イオン水のエッ
チャント、Ti層及びTiN層はHF＋脱イオン水のエッチャ
ント、Cr層及びCrN層はH2SO4＋脱イオン水のエッチャン
トを用いて行なう。Next, a TiN layer or a CiN layer is vacuum-deposited on the base material,
It is formed by a general film forming technique such as a sputter deposition method.
At this time, the temperature of the substrate, the atmosphere, the degree of vacuum, and the deposition rate are adjusted as necessary. Before the TiN layer or CrN layer is formed, the surface of the substrate is thoroughly cleaned by wet cleaning, reverse sputtering, etc., but the AlN substrate is unstable to strong acids and strong alkalis. Therefore, it is usually desirable to use a neutral cleaning solution. The oxygen contained in the TiN layer or the CrN layer is adjusted depending on the film formation atmosphere, the purity of the film formation material, and the like. Subsequently, a Ti layer or a Cr layer is formed without breaking vacuum. Subsequently, a thin-film conductor material layer made of the above-described material is continuously formed without breaking the vacuum. Thereafter, these layers are patterned by a photo-etching technique using a resist to form an AlN layer as shown in FIG.
TiN layer (or CrN layer) 2 and Ti layer (or Cr layer) on substrate 1
An AlN thin film circuit board is manufactured by forming a thin film conductor layer 4 via an underlayer in which the layers 3 are sequentially stacked. During this photo-etching, the Au layer is KI + I 2 + deionized water etchant, Ni
The layers are formed by using an etchant of CuSO 4 + HCl + ethyl alcohol + deionized water, the Ti layer and the TiN layer are formed by using an etchant of HF + deionized water, and the Cr and CrN layers are formed by using an etchant of H 2 SO 4 + deionized water.
（作用） 本発明によれば、AlN基材上にTiN薄膜及びTi層を順次
積層した下地層、又はCrN薄膜及びCr層を順次積層した
下地層を介して薄膜導体層を設けることによって、該基
材に対して薄膜導体層を極めて高い密着強度で形成でき
る。即ち、一般に薄膜層をAlN基材に高い密着強度で形
成する場合には、薄膜層と基材との格子定数、線膨脹係
数の差、化学反応性の有無に左右される。このうち格子
定数に注目すると、AlN基材に直接接触する下地層の下
層のTiN又はCrNはNaCl型立方構造をとるが、［111］方
向の最密面を考えた場合、六方構造となりAlNの格子定
数に近い値をもつ。この場合、AlNの格子定数とのミス
フィットの割合も低く、TiN層又はCrN層はAlN基材に対
して強固に密着させることが可能となる。また、下地層
の上層のTi層又はCr層は下層のTiN層、CrN層に対して充
分な化学反応性を有し、かつ該Ti層、Cr層をその上に積
層される薄膜導体層に対しても良好な密着性を示す。従
って、かかる下地層上に薄膜導体層を形成することによ
って、既述したようにAlN基材に対する薄膜導体層を密
着強度を向上できる。(Function) According to the present invention, the thin film conductor layer is provided on an AlN substrate via an underlayer in which a TiN thin film and a Ti layer are sequentially laminated, or an underlayer in which a CrN thin film and a Cr layer are sequentially laminated. The thin film conductor layer can be formed with extremely high adhesion strength to the substrate. That is, in general, when a thin film layer is formed on an AlN substrate with high adhesion strength, it depends on the difference between the lattice constant and the coefficient of linear expansion between the thin film layer and the substrate, and the presence or absence of chemical reactivity. Focusing on the lattice constant, TiN or CrN under the underlying layer that directly contacts the AlN base material has a NaCl-type cubic structure, but when considering the densest surface in the [111] direction, it becomes a hexagonal structure. It has a value close to the lattice constant. In this case, the ratio of misfit with the lattice constant of AlN is low, and the TiN layer or CrN layer can be firmly adhered to the AlN substrate. In addition, the upper Ti layer or Cr layer of the underlayer has sufficient chemical reactivity with the lower TiN layer and CrN layer, and the Ti layer and the Cr layer serve as thin-film conductor layers laminated thereon. Also shows good adhesion. Therefore, by forming the thin film conductor layer on such an underlayer, the adhesion strength of the thin film conductor layer to the AlN substrate can be improved as described above.
更に、AlN基材と直接接触する下地層の下層（TiN層又
はCrN層）に酸素を0.02〜30atm％含有させることによっ
て、該下層のAlN基材に対する密着強度を著しく向上で
きる。Furthermore, by making the lower layer (TiN layer or CrN layer) which is in direct contact with the AlN substrate contain 0.02 to 30 atm% of oxygen, the adhesion strength of the lower layer to the AlN substrate can be remarkably improved.
従って、本発明によれば薄膜導体層をAlN基材に対し
て高い密着強度で設けることができるため、使用時での
薄膜導体層の剥離や断線等を防止でき、能動素子等の高
密度実装が可能な半導体モジュールに有用な高信頼性の
AlN薄膜回路基板を得ることができる。Therefore, according to the present invention, since the thin film conductor layer can be provided with a high adhesion strength to the AlN substrate, peeling or disconnection of the thin film conductor layer during use can be prevented, and high-density mounting of active elements and the like can be prevented. High reliability for semiconductor modules that can be used
An AlN thin film circuit board can be obtained.
（実施例） 以下、本発明の実施例を詳細に説明する。(Example) Hereinafter, an example of the present invention will be described in detail.
実施例１〜５ まず、熱伝導率280W/m・ＫのAlN基材を平均線表面粗
さが150nmとなるようにラッピング、ポリッシングを行
なった後、該基材表面を湿式洗浄、逆スパッタを行なっ
た。つづいて、AlN基材表面に下記第１表に示す条件で
下地層及び薄膜導体層を成膜した。次いで、薄膜導体層
に写真触刻法によりレジストパターンを形成した後、該
パターンをマスクとしてAu層をKI＋I2＋脱イオンの水エ
ッチャント、Ni層をCuSO4＋HCl＋エチルアルコール＋脱
イオン水のエッチャント、Cu層をHNO3＋脱イオン水のエ
ッチャント、Pt層を王水＋脱イオン水のエッチャント、
Ti層及びTiN層をHF＋脱イオン水のエッチャント、Cr層
及びCrN層をH2SO4＋脱イオン水のエッチャントにより順
次エッチングして下地層を介して薄膜導体層を形成し、
AlN薄膜回路基板を製造した。Examples 1 to 5 First, after lapping and polishing an AlN substrate having a thermal conductivity of 280 W / m · K so that the average line surface roughness becomes 150 nm, the substrate surface was subjected to wet cleaning and reverse sputtering. Done. Subsequently, an underlayer and a thin-film conductor layer were formed on the surface of the AlN substrate under the conditions shown in Table 1 below. Next, after forming a resist pattern on the thin film conductor layer by photolithography, using the pattern as a mask, the Au layer is a KI + I 2 + deionized water etchant, the Ni layer is a CuSO 4 + HCl + ethyl alcohol + deionized water etchant, Cu layer is HNO 3 + deionized water etchant, Pt layer is aqua regia + deionized water etchant,
The Ti layer and the TiN layer are sequentially etched by an etchant of HF + deionized water and the Cr layer and the CrN layer are etched by an etchant of H 2 SO 4 + deionized water to form a thin-film conductor layer via an underlayer.
An AlN thin film circuit board was manufactured.
比較例１、２ まず、熱伝導率20W/m・ｋのAlN基材を平均線表面粗さ
が150nm以下となるようにラッピング、ポリッシングを
行なった後、該基材表面を湿式洗浄、逆スパッタを行な
った。つづいて、AlN基材表面に下記第１表に示す条件
で下地層（Ti層）及び薄膜導体層（Ni/Au）を成膜し
た。次いで、薄膜導体層に写真蝕刻法によりレジストパ
ターンを形成した後、該パターンをマスクとしてAu層を
KI＋I2＋脱イオン水のエッチャント、Ni層をCuSO4＋HCl
＋エチルアルコール＋脱イオン水のエッチャント、Ti層
をHF＋脱イオン水のエッチャントにより順次エッチング
して下地層を介して薄膜導体層を形成し、AlN薄膜回路
基板を製造した。Comparative Examples 1 and 2 First, after lapping and polishing an AlN substrate having a thermal conductivity of 20 W / m · k so that the average line surface roughness was 150 nm or less, wet cleaning and reverse sputtering were performed on the substrate surface. Was performed. Subsequently, an underlayer (Ti layer) and a thin-film conductor layer (Ni / Au) were formed on the surface of the AlN substrate under the conditions shown in Table 1 below. Next, after forming a resist pattern on the thin film conductor layer by photolithography, the Au layer is formed using the pattern as a mask.
KI + I 2 + deionized water etchant, Ni layer is CuSO 4 + HCl
An etchant of + ethyl alcohol + deionized water and a Ti layer were sequentially etched by an etchant of HF + deionized water to form a thin film conductor layer via an underlayer, thereby producing an AlN thin film circuit board.
しかして、本実施例１〜５及び比較例１、２の薄膜回
路基板について引張り試験による薄膜導体層の密着強度
及び1000時間の温度サイクロ試験（−50℃〜150℃、30
分間保持）後の薄膜導体層の断線の有無を調べた。その
結果を同第１表に併記した。The thin film circuit boards of Examples 1 to 5 and Comparative Examples 1 and 2 were subjected to a tensile test to determine the adhesion strength of the thin film conductor layer and a 1000-hour temperature cyclo test (−50 ° C. to 150 ° C., 30 ° C.).
(Holding for 1 minute), the thin film conductor layer was examined for any disconnection. The results are shown in Table 1.
第１表から明らかなように本実施例１〜５の薄膜回路
基板は、薄膜導体層のAlN基材に対する密着強度が2kg/m
m2以上と充分であり、しかも1000時間の温度サイクル後
も断線がなく、極めて信頼性の高いものであることがわ
かる。これに対し、比較例１、２の薄膜回路基板は薄膜
導体層のAlN基材に対する密着強度が本実施例１〜５に
比べて著しく劣り、しかも1000時間の温度サイクル後に
断線が認められた。 As is clear from Table 1, the thin film circuit boards of Examples 1 to 5 have an adhesion strength of the thin film conductor layer to the AlN substrate of 2 kg / m.
m 2 or more and is sufficient, yet without any disconnection after temperature cycling for 1000 hours, it can be seen that is extremely reliable. On the other hand, in the thin film circuit boards of Comparative Examples 1 and 2, the adhesion strength of the thin film conductor layer to the AlN substrate was significantly inferior to those of Examples 1 to 5, and further, disconnection was observed after a temperature cycle of 1000 hours.
［発明の効果］ 以上詳述した如く、本発明によればAlN基材への薄膜
導体層の密着強度を向上して温度サイクル時での薄膜導
体層の剥離や断線等を防止でき、ひいては能動素子等の
高密度実装が可能な半導体モジュールに有用な高信頼性
のAlN薄膜回路基板を提供できる。[Effects of the Invention] As described above in detail, according to the present invention, the adhesion strength of the thin film conductor layer to the AlN substrate can be improved to prevent peeling or disconnection of the thin film conductor layer during temperature cycling, and as a result, active A highly reliable AlN thin-film circuit board useful for a semiconductor module capable of high-density mounting of elements and the like can be provided.
第１図は、本発明に係わるAlN薄膜回路基板の一形態を
示す断面図である。 １……AlN基材、２……TiN層（又はCrN層）、３……Ti
層（又はCr層）、４……薄膜導体層。FIG. 1 is a sectional view showing an embodiment of an AlN thin film circuit board according to the present invention. 1. AlN base material 2. TiN layer (or CrN layer) 3. Ti
Layer (or Cr layer), 4... Thin-film conductor layer.
Claims (2)
を順次積層した下地層、又はCrN層及びCr層を順次積層
した下地層を介して薄膜導体層を設けたことを特徴とす
る窒化アルミニウム薄膜回路基板。A thin film conductor layer is provided on an aluminum nitride substrate via an underlayer in which a TiN layer and a Ti layer are sequentially laminated or an underlayer in which a CrN layer and a Cr layer are sequentially laminated. Aluminum thin film circuit board.
は酸素を0.02〜30atm％含むことを特徴とする請求項１
記載の窒化アルミニウム薄膜回路基板。2. The lower TiN layer or CrN layer constituting the underlayer contains oxygen in an amount of 0.02 to 30 atm%.
The aluminum nitride thin-film circuit board according to the above.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27793188A JP2664744B2 (en) | 1988-11-02 | 1988-11-02 | Aluminum nitride thin film circuit board |
| DE68922118T DE68922118T2 (en) | 1988-01-25 | 1989-01-24 | Circuit board. |
| EP89101189A EP0326077B1 (en) | 1988-01-25 | 1989-01-24 | Circuit board |
| US07/300,944 US4963701A (en) | 1988-01-25 | 1989-01-24 | Circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27793188A JP2664744B2 (en) | 1988-11-02 | 1988-11-02 | Aluminum nitride thin film circuit board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02123756A JPH02123756A (en) | 1990-05-11 |
| JP2664744B2 true JP2664744B2 (en) | 1997-10-22 |
Family
ID=17590277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27793188A Expired - Lifetime JP2664744B2 (en) | 1988-01-25 | 1988-11-02 | Aluminum nitride thin film circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2664744B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2723678B1 (en) * | 1994-08-11 | 1996-10-18 | Matra Defense | METHOD FOR MANUFACTURING CIRCUIT ON CO-SINTERED CERAMIC SUPPORT |
| JP3569093B2 (en) * | 1996-12-04 | 2004-09-22 | 株式会社東芝 | Wiring board and method of manufacturing the same |
| US6331811B2 (en) | 1998-06-12 | 2001-12-18 | Nec Corporation | Thin-film resistor, wiring substrate, and method for manufacturing the same |
| JP5413707B2 (en) * | 2005-06-06 | 2014-02-12 | Ｄｏｗａエレクトロニクス株式会社 | Metal-ceramic composite substrate and manufacturing method thereof |
| JP5289133B2 (en) * | 2009-03-26 | 2013-09-11 | 京セラ株式会社 | Wiring board and probe card board |
| JP5289134B2 (en) * | 2009-03-26 | 2013-09-11 | 京セラ株式会社 | Wiring board and probe card board |
| US8436252B2 (en) * | 2009-06-30 | 2013-05-07 | Ibiden Co., Ltd. | Printed wiring board and method for manufacturing the same |
-
1988
- 1988-11-02 JP JP27793188A patent/JP2664744B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02123756A (en) | 1990-05-11 |
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