JPH02123756A - Thin film circuit substrate of aluminum nitride - Google Patents
Thin film circuit substrate of aluminum nitrideInfo
- Publication number
- JPH02123756A JPH02123756A JP27793188A JP27793188A JPH02123756A JP H02123756 A JPH02123756 A JP H02123756A JP 27793188 A JP27793188 A JP 27793188A JP 27793188 A JP27793188 A JP 27793188A JP H02123756 A JPH02123756 A JP H02123756A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thin film
- base material
- film conductor
- conductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 72
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 title description 7
- 239000000463 material Substances 0.000 claims abstract description 52
- 239000004020 conductor Substances 0.000 claims abstract description 46
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000008367 deionised water Substances 0.000 description 13
- 229910021641 deionized water Inorganic materials 0.000 description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000009257 reactivity Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000001351 cycling effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 235000019441 ethanol Nutrition 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 235000011149 sulphuric acid Nutrition 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical group [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Manufacturing Of Printed Wiring (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、窒化アルミニウム（ＡｉＮ）薄膜回路基板に
関する。DETAILED DESCRIPTION OF THE INVENTION OBJECTS OF THE INVENTION Field of Industrial Application The present invention relates to aluminum nitride (AiN) thin film circuit boards.
（従来の技術）
従来、半導体モジュールに使用される薄膜回路基板の基
材としては、アルミナが主に用いられている。しかしな
がら、実装される能動素子の性能向上に伴って稼働時の
素子からの発熱量が増大する傾向にあり、アルミナの熱
伝導率では能動素子の実装個数が制約されるという問題
があった。(Prior Art) Conventionally, alumina has been mainly used as a base material for thin film circuit boards used in semiconductor modules. However, as the performance of mounted active elements improves, the amount of heat generated from the elements during operation tends to increase, and the thermal conductivity of alumina limits the number of active elements that can be mounted.
このようなことから、アルミナに代わり高熱伝導率をも
つＢｅＯを基材とした薄膜回路基板が使用されてきたが
、かかるＢｅＯは製造時、研磨時の毒性が強いため、基
材としての応用範囲が限定される。このため、代替材料
としてＡｉＮが広く用いられている。このＡｉＮは、無
害であり、製造、部品化、廃棄の制約がないという利点
を持ち、特に熱伝導率が７０〜２８０Ｗ／ｍ−にの広い
範囲、つまり放熱性がアルミナの３．５倍から場合によ
ってはＢｅＯより優れたレベルまで調整可能であるため
、アルミナ基材を用いた薄膜回路基板に比べて高い実装
密度を実現できるはかりか、能動素子の高密度化に合せ
て所望の熱伝導性を付与できる利点を有する。かかるＡ
ノＮ基材を用いた薄膜回路基板では、従来よりＡノＮ基
材上にＴ１下地層を介してＮｌ／Ａｕ薄膜導体層、Ｔｉ
下地層を介してＰｔ／Ａｕ薄膜導体層、又はＣｒ下地層
を介してＣｕ／Ａｕ薄・膜導体層を形成した構造のもの
が知られている。しかしながら、かかる構造の回路基板
では薄膜導体層とＡ、ｆ’Ｎ基材との密着強度が不充分
であるため、基材表面から薄膜導体層が剥離したり、断
線する欠点があった。また、ＡノＮ基材は結晶方位によ
りエツチング速度が異なり、結晶方位の異なる粒界に段
差が生じるため、前記基材に対する薄膜導体層の密着強
度が不充分であると、該薄膜導体層が段差上で断線を生
じる問題があった。For these reasons, thin film circuit boards based on BeO, which has high thermal conductivity, have been used instead of alumina, but BeO is highly toxic during manufacturing and polishing, so the range of application as a base material has been limited. is limited. For this reason, AiN is widely used as an alternative material. This AiN has the advantage of being harmless and having no restrictions on manufacturing, componentization, or disposal.In particular, it has a wide range of thermal conductivity from 70 to 280 W/m-, which means its heat dissipation is 3.5 times that of alumina. In some cases, it can be adjusted to levels superior to BeO, making it possible to achieve higher packaging density than thin-film circuit boards using alumina substrates, or to achieve desired thermal conductivity as the density of active elements increases. It has the advantage of being able to provide Such A
Conventionally, in thin film circuit boards using NON substrates, Nl/Au thin film conductor layers, Ti
Structures in which a Pt/Au thin film conductor layer is formed through an underlayer or a Cu/Au thin film conductor layer is formed through a Cr underlayer are known. However, in a circuit board having such a structure, the adhesion strength between the thin film conductor layer and the A, f'N base material is insufficient, resulting in the drawback that the thin film conductor layer may peel off from the surface of the base material or may be disconnected. In addition, the etching rate of the A/N base material varies depending on the crystal orientation, and steps occur at grain boundaries with different crystal orientations. Therefore, if the adhesion strength of the thin film conductor layer to the base material is insufficient, the thin film conductor layer may There was a problem of wire breakage occurring on steps.
（発明が解決しようとする課題）
本発明は、上記従来の課題を解決するためになされたも
ので、Ａ、ｆｆＮ基材への薄膜導体層の密着強度を向上
し、温度サイクル時での剥離や断線を防止し得るＡノＮ
薄膜回路基板を提供しようとするものである。(Problems to be Solved by the Invention) The present invention has been made to solve the above-mentioned conventional problems, and it improves the adhesion strength of the thin film conductor layer to the A, ffN base material and prevents peeling during temperature cycles. A/N that can prevent wire breakage
The present invention aims to provide a thin film circuit board.
［発明の構成］
（課題を解決するための手段）
本発明は、窒化アルミニウム基村上にＴｉＮ層及びＴｉ
層を順次積層した下地層、又はＣｒＮ層及びＣｒ層を順
次積層した下地層を介して薄膜導体層を設けたことを特
徴とする窒化アルミニウム薄膜回路基板である。[Structure of the Invention] (Means for Solving the Problem) The present invention provides a TiN layer and a TiN layer on an aluminum nitride base layer.
This is an aluminum nitride thin film circuit board characterized in that a thin film conductor layer is provided through a base layer formed by sequentially laminating layers, or a base layer formed by sequentially laminating a CrN layer and a Cr layer.
上記下地層の構成材料であるＡＩ！Ｎ基材側に配置され
る下層のＴｉＮ層又はＣｒＮ層は該基材に対する密性性
を高める作用をなし、上層の７１層又はＣｒ層は前記Ｔ
ｉＮ層又はＣｒＮ層と前記薄膜導体層との密着性を高め
る作用を有する。かかる下地層中の下層（ＴＩ Ｎ層又
はＣｒＮ層）の厚さについては、５〜５００ ｎｍとす
ることが望ましい。AI which is the constituent material of the above base layer! The lower TiN layer or CrN layer disposed on the N base material side has the effect of increasing the density with respect to the base material, and the upper layer 71 or Cr layer has the effect of increasing the density with respect to the base material.
It has the effect of increasing the adhesion between the iN layer or CrN layer and the thin film conductor layer. The thickness of the lower layer (TIN layer or CrN layer) in the base layer is preferably 5 to 500 nm.
この理由は、該下層の厚さを５ｎｌ１１未満にするとＡ
、ｆ’Ｎ基材に対する均一な密着強度を得ることが困難
となり、かといってその厚さが５００ ｎｍを越えると
バターニングのためのエツチングによる除去が困難とな
るからである。前記下地層の上層（７１層又はＣｒ）の
厚さについては１０〜９００ ｎｍとすることが望まし
い。この理由は、上層の厚さを１０層ｍ未満にするとＴ
ｉＮ層又はＣｒＮ層との充分な化学反応性が得難く、充
分な密着強度を達成できなくなる恐れがあり、かといっ
てその厚さが９００ ｎｍを越えるとその内部応力のた
めに基材から、７’ｌｌ Ｍし易くなる恐れがあるから
である。また、前記下層であるＴｉＮ層又はＣｒＮ層に
は酸素が０．０２〜３０ａｔ％の範囲で含有されている
ことが望ましい。この理由は、含有される酸素量を０．
０２ａｔ％未虜にするとＡノＮ基材と上層である７１層
又はＣｒ層とに対する化学反応性を充分に高めることが
困難となり、強固な密着力を付与し難く、かといって酸
素量が３０ ａｔｍ％を越えるとＡ１Ｎ基材と上層であ
るＴｉ層又はＣｒ層との間でのＡノ２０３含有量が多く
なり、薄膜導体層が基材から剥離し易くなるからである
。The reason for this is that if the thickness of the lower layer is less than 5nl11,
, f'N It becomes difficult to obtain uniform adhesion strength to the base material, and if the thickness exceeds 500 nm, it becomes difficult to remove by etching for buttering. The thickness of the upper layer (71 layer or Cr) of the base layer is preferably 10 to 900 nm. The reason for this is that when the thickness of the upper layer is less than 10 m, T
It is difficult to obtain sufficient chemical reactivity with the iN layer or CrN layer, and there is a risk that sufficient adhesion strength cannot be achieved.On the other hand, if the thickness exceeds 900 nm, the internal stress will cause the material to separate from the base material. This is because there is a possibility that it becomes easy to perform 7'll M. Further, it is desirable that the lower TiN layer or CrN layer contains oxygen in a range of 0.02 to 30 at%. The reason for this is that the amount of oxygen contained is 0.
If 02at% is used, it becomes difficult to sufficiently increase the chemical reactivity between the A-N base material and the upper layer 71 or Cr layer, making it difficult to provide strong adhesion, and on the other hand, the amount of oxygen is 30%. This is because if it exceeds atm%, the A203 content between the A1N base material and the upper Ti layer or Cr layer will increase, making it easier for the thin film conductor layer to peel off from the base material.
上記薄膜導体層としては、例えばＮｉ／Ａｕ。The thin film conductor layer is made of, for example, Ni/Au.
Ｃｕ ／Ａｕ 、Ｎｉ ／Ｐｄ ＳＮｉ ／Ｐｄ ／Ａ
ｕ 。Cu/Au, Ni/Pd SNi/Pd/A
u.
ＰＬ／Ａｕ等を挙げることができる。Examples include PL/Au.
なお、回路基板を多層薄膜導体層構造とする場合には、
−層目の薄膜導体層を含むＡ、ｆ７Ｎ基材上に該Ａ、ｆ
？Ｎと同組成のＡｉＮからなる誘電体層を形成し、この
上に下地層を介して二層目の薄膜導体層を形成すること
によって実現される。In addition, when the circuit board has a multilayer thin film conductor layer structure,
- the A, f on the A, f7N substrate containing the thin film conductor layer of the
? This is achieved by forming a dielectric layer made of AiN having the same composition as N, and forming a second thin film conductor layer thereon with an underlying layer interposed therebetween.
次に、本発明のＡ、ｆｌ’Ｎ薄膜Ｍ薄膜坂路基板方法を
簡単に説明する。Next, the A, fl'N thin film M thin film slope substrate method of the present invention will be briefly described.
まず、所望の熱伝導率を有し、表面粗さが下地層や薄膜
導体層を形成するのに適した値をもつＡ、ｉ’Ｎ基材を
用意する。表面粗さの調節は、焼結ＡＩ！Ｎ基材の研磨
もしくはサブミクロン粒子を原料として製造された焼結
ＡノＮ基材を用いることにより達成できる。First, an A, i'N base material having a desired thermal conductivity and a surface roughness suitable for forming an underlayer or a thin film conductor layer is prepared. Adjust the surface roughness with sintering AI! This can be achieved by polishing the N base material or by using a sintered A-N base material manufactured using submicron particles as a raw material.
次いで、前記基材上にＴＩ Ｎ層又はＣｒＮ層を真空蒸
着法、スパッタ蒸着法等の一般的な成膜技術により形成
する。この時、必要に応じて基材１Ｍ度、雰囲気、真空
度、成膜速度を調整する。Next, a TIN layer or a CrN layer is formed on the base material by a general film forming technique such as a vacuum deposition method or a sputter deposition method. At this time, the substrate 1M degree, atmosphere, degree of vacuum, and film-forming speed are adjusted as necessary.
ＴｉＮ層又はＣｒＮ層の成膜に先だって基材表面を湿式
洗浄法、逆スパツタ法などで充分な洗浄を行なうが、Ａ
、ｆ？ Ｎ 基材は強酸、強アルカリに対して不安定
であるため、洗浄液の選定に注意が必要で、通常中性洗
浄液を用いることが望ましい。また、ＴｉＮ層又はＣｒ
Ｎ層中に含有させる酸素は成膜雰囲気、成膜材料の純度
等により調整する。Before forming a TiN layer or a CrN layer, the surface of the base material is thoroughly cleaned using a wet cleaning method, a reverse sputtering method, etc.
, f? Since the N base material is unstable to strong acids and strong alkalis, care must be taken in selecting a cleaning liquid, and it is usually desirable to use a neutral cleaning liquid. In addition, TiN layer or Cr
Oxygen contained in the N layer is adjusted depending on the film forming atmosphere, the purity of the film forming material, etc.
つづいて、真空を破らずにＴｉ層又はＣｒ層を形成する
。ひきつづき、真空を破らずに上述した材料からなる薄
膜導体材料層を連続して形成する。Subsequently, a Ti layer or a Cr layer is formed without breaking the vacuum. Subsequently, a thin film conductive material layer made of the above-mentioned material is continuously formed without breaking the vacuum.
この後、これらの層をレジストを用いたフォトエツチン
グ技術によりパターニングすることにより、第１図に示
すようにｌｔ’Ｎ基材ｌ上に７１８層（又はＣｒＮ層）
２及び７１層（又はＣｒ層）３を順次積層した下地層を
介して薄膜導体層４を形成してＡノＮ薄膜回路基板を製
造する。このフォトエツチング時には、Ａｕ層はに１＋
１２＋脱イオン水のエッチャント、Ｎｉ層はＣｕＳＯ４
＋ＨＣＩ！十エチルアルコール＋脱イオン水のエッチャ
ント、７１層及び７１８層はＨＦ十脱イオン水のエッチ
ャント、Ｃｒ層及びＣｒＮ層はＨ２ＳＯ４＋脱イオン水
のエッチャントを用いて行なう。Thereafter, by patterning these layers by photoetching technology using resist, 718 layers (or CrN layers) are formed on the lt'N base material l as shown in FIG.
A thin film conductor layer 4 is formed through a base layer in which layers 2 and 71 (or Cr layer) 3 are sequentially laminated to produce an A/N thin film circuit board. During this photoetching, the Au layer is
12+ deionized water etchant, Ni layer is CuSO4
+HCI! An etchant of 10 ethyl alcohol + deionized water is used for the 71st and 718th layers, an etchant of HF deionized water is used for the 71st and 718th layers, and an etchant of H2SO4 + deionized water is used for the Cr and CrN layers.
（作用）
本発明によれば、Ａ７Ｎ基材上にＴｉＮ薄膜及び７１層
を順次積層した下地層、又はＣｒＮ薄膜及びＣｒ層を順
次積層した下地層を介して薄膜導体層を設けることによ
って、該基材に対して薄膜導体層を極めて高い密着強度
で形成できる。即ち、一般に薄膜層をＡノＮ基材に高い
密着強度で形成する場合には、薄膜層と基材との格子定
数、線膨張係数の差、化学反応性の存無に左右される。(Function) According to the present invention, a thin film conductor layer is provided on an A7N base material via a base layer in which a TiN thin film and 71 layers are successively laminated, or a base layer in which a CrN thin film and a Cr layer are successively laminated. A thin film conductor layer can be formed on a base material with extremely high adhesion strength. That is, in general, when forming a thin film layer on an A/N base material with high adhesion strength, it depends on the difference in lattice constant and linear expansion coefficient between the thin film layer and the base material, and the presence or absence of chemical reactivity.
このうち格子定数に注目すると、Ａ、ｔＰＮ基材に直接
接触する下地層の下層のＴｉＮ又はＣｒＮはＮａＣｌ型
立方構造をとるが、［１１１１方向の最密面を考えた場
合、六方構造となりＡ）Ｎの格子定数に近い値をもつ。Among these, focusing on the lattice constant, the lower layer of TiN or CrN in the underlayer that is in direct contact with the tPN base material has a NaCl-type cubic structure, but when considering the close-packed plane in the [1111 direction, it has a hexagonal structure. ) has a value close to the lattice constant of N.
この場合、ＡｉＮの格子定数とのミスフィツトの割合も
低く、７１８層又はＣｒＮ層はＡノＮ基材に対して強固
に密着させることが可能となる。また、下地層の上層の
７１層又はＣｒ層は下層の７１８層、ＣｒＮ層に対して
充分な化学反応性を有し、かつ該Ｔｉ層、Ｃｒ層をその
上に積層される薄膜導体層に対しても良好な密着性を示
す。従って、かかる下地層上に薄膜導体層を形成するこ
とによって、既述したようにＡＩ！Ｎ基材に対する薄膜
導体層の密着強度を向上できる。In this case, the misfit ratio with the lattice constant of AiN is also low, and the 718 layer or CrN layer can be firmly adhered to the A/N base material. In addition, the upper layer 71 or Cr layer of the base layer has sufficient chemical reactivity with the lower layer 718 and CrN layer, and the Ti layer and Cr layer are bonded to the thin film conductor layer laminated thereon. It also shows good adhesion. Therefore, by forming a thin film conductor layer on such an underlayer, AI! The adhesion strength of the thin film conductor layer to the N base material can be improved.
更に、ＡノＮ基材と直接接触する下地層の下層（Ｔｉ
Ｎ層又はＣｒＮ層）に酸素を０．０２〜３０ ａｔｍ％
含有させることによって、該下層のＡ、ｔ’Ｎ基材に対
する密着強度を著しく向上できる。Furthermore, the lower layer of the underlayer (Ti
0.02 to 30 atm% of oxygen to N layer or CrN layer)
By containing it, the adhesion strength of the lower layer to the A, t'N base material can be significantly improved.
従って、本発明によれば薄膜導体層をＡノＮ基材に対し
て高い密着強度で設けることができるため、使用時での
薄膜導体層の剥離や断線等を防止でき、能動素子等の高
密度実装が可能な半導体モジュールに有用な高信頼性の
ＡノＮ薄膜回路基板を得ることができる。Therefore, according to the present invention, the thin film conductor layer can be provided with high adhesion strength to the A/N base material, so it is possible to prevent the thin film conductor layer from peeling off or disconnection during use, and it is possible to prevent the thin film conductor layer from peeling off or disconnecting during use. A highly reliable A/N thin film circuit board useful for semiconductor modules capable of dense packaging can be obtained.
（実施例） 以下、本発明の実施例を詳細に説明する。(Example) Examples of the present invention will be described in detail below.
実施例１〜５
まず、熱伝導率２８０ Ｗ／ ｍ −ＫのＡノＮ基材を
平均線表面粗さが１５０ ｎｓとなるようにラッピング
、ポリッシングを行なった後、該基材表面を湿式洗浄、
逆スパツタを行なった。つづいて、ＡＩ！Ｎ基材表面に
下記第１表に示す条件で下地層及び薄膜導体層を成膜し
た。次いで、薄膜導体層に写真蝕刻法によりレジストパ
ターンを形成した後、該パターンをマスクとしてＡ’ｕ
層をＫＩ＋１２＋脱イオン水のエッチャント、Ｎｉ層を
Ｃｕ ＳＯ４＋ＨＣｉ＋エチルアルコール＋脱イオン水
のエッチャント、Ｃｕ層をＨＮＯ３＋脱イオン水のエッ
チャント、Ｐｔ層を王水＋脱イオン水のエッチャント、
７１層及び７１８層をＩＦ十脱イオン水のエッチャント
、Ｃｒ層及びＣｒＮ層をＨ２ＳＯ４＋脱イオン水のエッ
チャントにより順次エツチングして下地層を介して薄膜
導体層を形成し、Ａ、ｔ’Ｎ薄膜回路基板を製造した。Examples 1 to 5 First, an A-N base material with a thermal conductivity of 280 W/m-K was lapped and polished so that the average linear surface roughness was 150 ns, and then the surface of the base material was wet-cleaned. ,
I did a reverse spatsuta. Next, AI! A base layer and a thin film conductor layer were formed on the surface of the N base material under the conditions shown in Table 1 below. Next, after forming a resist pattern on the thin film conductor layer by photolithography, A'u
layer with KI + 12 + deionized water etchant, Ni layer with Cu SO4 + HCi + ethyl alcohol + deionized water etchant, Cu layer with HNO3 + deionized water etchant, Pt layer with aqua regia + deionized water etchant,
The 71st layer and the 718th layer were sequentially etched with an IF-deionized water etchant, and the Cr layer and CrN layer were etched with an H2SO4+ deionized water etchant to form a thin film conductor layer through the underlying layer, forming an A, t'N thin film circuit. The substrate was manufactured.
比較例１．２
まず、熱伝導率２０Ｗ／ｍ−にのＡ！Ｎ基材を平均線表
面粗さが１５０１１１以下となるようにラッピング、ポ
リッシングを行なった後、該基材表面を湿式洗浄、逆ス
パツタを行なった。つづいて、ＡｉＮ基材表面に下記第
１表に示す条件で下地層（Ｔ１層）及び薄膜導体層（Ｎ
ｌ／Ａｕ）を成膜した。次いで、薄膜導体層に写真蝕刻
法によりレジストパターンを形成した後、該パターンを
マスクとしてＡｕ層をＫＩ＋Ｉ２＋脱イオン水のエッチ
ャント、Ｎ１層をＣｕ ＳＯ４＋ＨＣ１＋エチルアルコ
ール＋脱イオン水のエッチャント、Ｔ１層をＨＦ十脱イ
オン水のエッチャントにより順次エツチングして下地層
を介して薄膜導体層を形成し、ＡノＮ薄膜回路基板を製
造した。Comparative Example 1.2 First, A with a thermal conductivity of 20 W/m-! After lapping and polishing the N base material so that the average linear surface roughness was 150111 or less, the surface of the base material was wet-cleaned and reverse sputtered. Next, a base layer (T1 layer) and a thin film conductor layer (N
1/Au) was formed into a film. Next, after forming a resist pattern on the thin film conductor layer by photolithography, using the pattern as a mask, the Au layer was treated with KI + I2 + deionized water etchant, the N1 layer was treated with Cu SO4 + HC1 + ethyl alcohol + deionized water etchant, and the T1 layer was treated with HF. A thin film conductor layer was formed through the underlayer by sequential etching with an etchant of 10 deionized water, and an A/N thin film circuit board was manufactured.
しかして、本実施例１〜５及び比較例１．２の薄膜回路
基板について引張り試験による薄膜導体層の密着強度及
び１０００時間の温度サイクル試験（−５０℃〜１５０
℃、３０分間保持）後の薄膜導体層の断線の有無を調べ
た。その結果を同第１表に併記した。For the thin film circuit boards of Examples 1 to 5 and Comparative Example 1.2, the adhesion strength of the thin film conductor layer was determined by a tensile test and a 1000 hour temperature cycle test (-50°C to 150°C).
The presence or absence of disconnection in the thin film conductor layer was examined after the test was held at 30°C for 30 minutes. The results are also listed in Table 1.
第１表から明らかなように本実施例１〜５の薄膜回路基
板は、薄膜導体層のＡｊｌ’Ｎ基材に対する密層強度が
２ｋｇ／ｍａ２以上と充分であり、しかも１０００時間
の温度サイクル後も断線がなく、極めて信頼性の高いも
のであることがわかる。これに対し、比較例１．２の薄
膜回路基板は薄膜導体層のＡＩ！Ｎ基材に対する密着強
度が本実施例１〜５に比べて著しく劣り、しかも１００
０時間の温度サイクル後に断線が認められた。As is clear from Table 1, the thin film circuit boards of Examples 1 to 5 have sufficient dense layer strength of the thin film conductor layer against the Ajl'N base material of 2 kg/ma2 or more, and moreover, after 1000 hours of temperature cycling. It can be seen that there was no disconnection and that it was extremely reliable. On the other hand, the thin film circuit board of Comparative Example 1.2 has a thin film conductor layer of AI! The adhesion strength to the N base material was significantly inferior to those of Examples 1 to 5, and
Disconnection was observed after 0 hours of temperature cycling.
［発明の効果］
以上詳述した如く、本発明によればＡＩ！Ｎ基材への薄
膜導体層の密着強度を向上して温度サイクル時での薄膜
導体層の剥離や断線等を防止でき、ひいては能動素子等
の高密度実装が可能な半導体モジュールに有用な高信頓
性のＡノＮ薄膜回路基板を提供できる。[Effects of the Invention] As detailed above, according to the present invention, AI! It improves the adhesion strength of the thin film conductor layer to the N base material and prevents the thin film conductor layer from peeling or disconnection during temperature cycling, and is useful for semiconductor modules that can be used for high-density mounting of active elements. A ready-to-use A/N thin film circuit board can be provided.
第１図は、本発明に係わるＡノＮ薄膜回路基板の一形態
を示す断面図である。
１・＝−１１？Ｎ基材、２−ＴｉＮ層（又はＣｒＮ層）
・・・Ｔ１
層
（又はＣ「
層）
・・・薄膜導体
層。FIG. 1 is a sectional view showing one form of an A/N thin film circuit board according to the present invention. 1.=-11? N base material, 2-TiN layer (or CrN layer)...T1 layer (or C" layer)...thin film conductor layer.
Claims (2)
を順次積層した下地層、又はＣｒＮ層及びＣｒ層を順次
積層した下地層を介して薄膜導体層を設けたことを特徴
とする窒化アルミニウム薄膜回路基板。(1). An aluminum nitride thin film circuit board, characterized in that a thin film conductor layer is provided on an aluminum nitride base material via a base layer in which a TiN layer and a Ti layer are laminated in sequence, or a base layer in which a CrN layer and a Cr layer are laminated in sequence.
層は酸素を０．０２〜３０ａｔｍ％含むことを特徴とす
る請求項１記載の窒化アルミニウム薄膜回路基板。(2). The lower TiN layer or CrN that constitutes the base layer
2. The aluminum nitride thin film circuit board according to claim 1, wherein the layer contains 0.02 to 30 atm % of oxygen.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27793188A JP2664744B2 (en) | 1988-11-02 | 1988-11-02 | Aluminum nitride thin film circuit board |
| EP89101189A EP0326077B1 (en) | 1988-01-25 | 1989-01-24 | Circuit board |
| DE68922118T DE68922118T2 (en) | 1988-01-25 | 1989-01-24 | Circuit board. |
| US07/300,944 US4963701A (en) | 1988-01-25 | 1989-01-24 | Circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27793188A JP2664744B2 (en) | 1988-11-02 | 1988-11-02 | Aluminum nitride thin film circuit board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02123756A true JPH02123756A (en) | 1990-05-11 |
| JP2664744B2 JP2664744B2 (en) | 1997-10-22 |
Family
ID=17590277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27793188A Expired - Lifetime JP2664744B2 (en) | 1988-01-25 | 1988-11-02 | Aluminum nitride thin film circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2664744B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2723678A1 (en) * | 1994-08-11 | 1996-02-16 | Matra Defense | Mfg. method for multilayer ceramic circuit for microelectronics |
| JPH10163378A (en) * | 1996-12-04 | 1998-06-19 | Toshiba Corp | Wiring board and its manufacture |
| US6331811B2 (en) | 1998-06-12 | 2001-12-18 | Nec Corporation | Thin-film resistor, wiring substrate, and method for manufacturing the same |
| JP2006339611A (en) * | 2005-06-06 | 2006-12-14 | Dowa Holdings Co Ltd | Metal-ceramic compound substrate and manufacturing method of the same |
| JP2010232339A (en) * | 2009-03-26 | 2010-10-14 | Kyocera Corp | Wiring board and substrate for probe card |
| JP2010232338A (en) * | 2009-03-26 | 2010-10-14 | Kyocera Corp | Wiring board and substrate for probe card |
| WO2011002022A1 (en) * | 2009-06-30 | 2011-01-06 | イビデン株式会社 | Printed circuit board and manufacturing method of printed circuit board |
-
1988
- 1988-11-02 JP JP27793188A patent/JP2664744B2/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2723678A1 (en) * | 1994-08-11 | 1996-02-16 | Matra Defense | Mfg. method for multilayer ceramic circuit for microelectronics |
| JPH10163378A (en) * | 1996-12-04 | 1998-06-19 | Toshiba Corp | Wiring board and its manufacture |
| US6331811B2 (en) | 1998-06-12 | 2001-12-18 | Nec Corporation | Thin-film resistor, wiring substrate, and method for manufacturing the same |
| JP2006339611A (en) * | 2005-06-06 | 2006-12-14 | Dowa Holdings Co Ltd | Metal-ceramic compound substrate and manufacturing method of the same |
| JP2010232339A (en) * | 2009-03-26 | 2010-10-14 | Kyocera Corp | Wiring board and substrate for probe card |
| JP2010232338A (en) * | 2009-03-26 | 2010-10-14 | Kyocera Corp | Wiring board and substrate for probe card |
| WO2011002022A1 (en) * | 2009-06-30 | 2011-01-06 | イビデン株式会社 | Printed circuit board and manufacturing method of printed circuit board |
| US8436252B2 (en) | 2009-06-30 | 2013-05-07 | Ibiden Co., Ltd. | Printed wiring board and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2664744B2 (en) | 1997-10-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0326077B1 (en) | Circuit board | |
| EP1396889B1 (en) | Electronic device substrate structure and electronic device | |
| US7105880B2 (en) | Electronic device and method of fabricating the same | |
| US7042090B2 (en) | Electronic device and method of fabricating the same | |
| JPH02123756A (en) | Thin film circuit substrate of aluminum nitride | |
| JP2005056940A (en) | Electronic device, substrate therefor, and method for manufacturing them | |
| JP2003158378A (en) | Method for manufacturing electronic circuit device having multi-layer circuit board | |
| US7436051B2 (en) | Component for fabricating an electronic device and method of fabricating an electronic device | |
| JP3391184B2 (en) | Silicon wafer and method for manufacturing the same | |
| US4588446A (en) | Method for producing graded band gap mercury cadmium telluride | |
| JP2703276B2 (en) | Aluminum nitride thin film circuit board | |
| WO2020175971A1 (en) | High purity piezoelectric thin film and method of manufacturing element using same thin film | |
| JP5606920B2 (en) | Polymer laminated substrate for epitaxial growth film formation and method for producing the same | |
| JP2703276C (en) | ||
| KR102556712B1 (en) | Method of manufacturing AlxGa1-xN (0.5≤x≤1) piezoelectric thin films with high purity and their apparatus using the thin film | |
| JP2002075705A (en) | Resistor substrate | |
| JP3322967B2 (en) | Circuit board | |
| JP2760560B2 (en) | Circuit board | |
| JPH01189191A (en) | Circuit board | |
| JPH04218950A (en) | Aln substrate | |
| JP2002134422A (en) | Method for producing nitride semiconductor film, and method for producing nitride semiconductor substrate | |
| JP3585964B2 (en) | Ceramic surface wiring substrate | |
| JPH01194490A (en) | Manufacture of ceramic wiring board | |
| KR20200113508A (en) | Method of manufacturing AlxGa1-xN (0.5≤x≤1) piezoelectric thin films with high purity and their apparatus using the thin film | |
| JPH06163544A (en) | Wiring structure of semiconductor integrated circuit and fabrication thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080620 Year of fee payment: 11 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 Free format text: JAPANESE INTERMEDIATE CODE: R313114 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080620 Year of fee payment: 11 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090620 Year of fee payment: 12 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090620 Year of fee payment: 12 |