JP3015491B2 - AlN substrate - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an AlN substrate used for a thin film circuit board or the like.

[0002]

2. Description of the Related Art Conventionally, alumina has been mainly used as a substrate of a thin-film wiring mounting module. However, the amount of heat generated during operation of the active element tends to increase with the improvement in performance, and the thermal conductivity of alumina is limited by the number of mounted active elements. For this reason, the mounting density of the module becomes low due to thermal reasons.

[0003] For these reasons, attempts have been made to use BeO, which has a high thermal conductivity, as a substrate material instead of alumina, but BeO has a limited range of application as a substrate due to toxicity during processing and polishing. Is done.

AlN has recently been used as an alternative to BeO having such problems. AlN is non-toxic, and has achieved a thermal conductivity higher than that of BeO by reducing the concentration of oxygen contained therein and developing a sintering aid that promotes densification. For this reason, the application of AlN to a thin film circuit board has begun gradually, and wiring of a thin film conductor is being embodied as a high-density mounting board utilizing high thermal conductivity. As such, on an AlN substrate, T
i / Ni / Au, Ti / Pt / Au, or Cr / Cu /
There is a circuit board on which Au is formed. However, such a circuit board has a drawback that a wiring layer formed by the thin film conductor is peeled off or disconnected from the surface of the substrate due to insufficient adhesion strength between the thin film conductor and the AlN substrate. Further, since the etching rate of AlN differs depending on the crystal orientation, a step occurs at the grain boundary having a different crystal orientation in the AlN substrate. As a result, if the adhesion strength between the thin film conductor and the base is insufficient, there is a problem that the wiring layer is disconnected on the step. Therefore, the thin film conductor can be stably formed with good adhesion.
There is a need for a circuit board that can be formed on an 1N substrate.

[0005]

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems of the prior art, and has a high adhesion strength between an AlN substrate and a thin film conductor, and has been applied to a circuit board. It is an object of the present invention to provide an AlN substrate capable of preventing peeling or disconnection of a wiring layer during a temperature cycle.

[0006]

SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention firstly provides an AlN substrate and Cu, Bi, In, Mo, Nb, Pt, W, Z
The elements M1, Al and N selected from n and Ni are represented by A
l _x M1 _100-x : AlN = y: z (where x is atomic%, z and y are molecular%, z + y = 100, 1
0 ≦ x ≦ 90, 50 ≦ y ≦ 99, and 1 ≦ z ≦ 50), and a metal / nitride layer laminated on the metal / nitride layer. An AlN substrate comprising: a thin film conductor layer as a main component; and a component having a metal surface bonded to a predetermined position of the thin film conductor layer.

Second, an AlN substrate and an Al _v N _100-v (where v is atomic% and 5
0 <v <99), and a nitride layer provided on the nitride layer and containing Cu, Bi, In, Mo,
Element M selected from Nb, Pt, W, Zn, Ni
1 and Al by Al _x M1 _100-x (where x is atomic%
Wherein the ratio is in the range of 10 ≦ x ≦ 90), and a thin film conductor layer mainly composed of M1 laminated on the compound layer. Provided is an AlN substrate, wherein a component having a metal surface is bonded at a predetermined position.

In the case where the AlN substrate according to the present invention is used as a circuit board, a component having a metal surface may be made of Ag-Cu, A
g, Ag-Au, Pb-Sn, Au-Sn, Au-Si
It is preferable to join to the above-mentioned conductor layer by one kind of brazing material or solder.

The AlN substrate used in the present invention is a sintered body with an appropriate sintering aid, if necessary, and preferably has an oxygen content of 0.005 to 10 atomic%. This is because if the oxygen content in the substrate is less than 0.005 atomic%, it is difficult to sufficiently increase the adhesion strength to the metal / nitride layer or the nitride layer. This is because there is a possibility that the thermal conductivity of the compound may be reduced to a value similar to that of alumina and the advantage of high thermal conductivity may be lost.

In the AlN substrate according to the first aspect of the present invention, a metal / nitride layer to be described in detail below and a thin-film conductor layer mainly composed of the element represented by M1 are formed on an AlN substrate. Is provided.

The metal / nitride layer functions as a bonding layer between the AlN substrate and the thin-film conductor layer. This metal / nitride layer is a layer composed of the element represented by M1 and Al and N, and contains a predetermined composition of an Al-M1 alloy and AlN at a predetermined ratio. In this layer, the metal component and the nitride may have a concentration gradient in the film thickness direction, and the substrate side may be rich in the metal component and the conductor layer side may be rich in the nitride.
Al, N, and M1, which are constituents of this layer, have an effect of improving the adhesion strength between the AlN substrate and the thin-film conductor layer.
Has the effect of matching the lattice constant between the AlN substrate and the thin film conductor layer, and the effect of relaxing the coefficient of thermal expansion.

The metal / nitride layers are represented by M1, Al, N and A
l _x M1 _100-x : AlN = y: z (where x is atomic%, z and y are molecular%, z + y = 100, 10
≤ x ≤ 90, 50 ≤ y ≤ 99 and 1 ≤ z ≤ 50). The reason for limiting the type of M1 and the ratio of each constituent element and component to this range will be described below.

(1) M1 is Cu, Bi, In, Mo, N
It is an element selected from b, Pt, W, Zn, and Ni. Since these elements have high reactivity with Al, they are suitable not only as elements constituting the thin film conductor layer, but also as one of the alloy components constituting the metal / nitride layer.

(2) A which is an alloy component of the metal / nitride layer
In l _x M1 _100-x , x is less than 10 (ie, Al
Is less than 10 atomic%), the adhesion strength between the AlN substrate and the thin film conductor layer cannot be sufficiently increased.
Exceeds 90, the amount of Al in the layer increases, and etching becomes insufficient during patterning such as circuit formation.
This causes a reduction in resistance between wires, a short circuit, and the like. Therefore, the value of x, that is, the atomic% of Al is in the range of 10 to 90, and more preferably in the range of 15 to 88.

(3) Al-M1 and A constituting this layer
1N is suitable for high adhesion strength and stabilization of this layer. If the Al-M1 content is less than 50% by mole, the adhesive strength at high temperatures is reduced, and the thin film conductor layer and the Al
Peeling from the N substrate occurs. In this case, since AlN exceeds 50% by mole, the internal stress of the metal / nitride layer increases, and it is difficult to obtain a stable adhesion strength. On the other hand, if Al-M1 exceeds 99% by mole, the internal stress at the interface increases, and it is difficult to obtain a stable adhesion strength. Further, in this case, since AlN is less than 1 molecule%, it is difficult to prevent the reaction between this layer and the thin film conductor layer.
1 becomes unstable, and the adhesive strength at high temperatures is reduced. For this reason, the range of the molecular% of Al-M1 (that is, the value of y) is 50 to 99, more preferably 50 to 95, and still more preferably 52 to 95. Also, the molecular% of AlN
(That is, the value of z) is in the range of 1 to 50, more preferably 5 to 50, and even more preferably 5 to 48.

The thickness of such a metal / nitride layer is 1 nm.
It is desirable to make the above. This means that the thickness of this layer is 1
If the thickness is less than nm, it is difficult to stably improve the adhesion strength between the AlN substrate and the thin film conductor layer. If this layer is too thick, it takes a long time to make the circuit board thinner and remove it by etching, and it is difficult to set conditions such as pattern accuracy. A more preferable range of the thickness of the metal / nitride layer is 10 to 500 nm. Note that even if a small amount of oxygen or the like contained in the substrate and on the surface of the substrate slightly diffuses into the metal / nitride layer, the influence on the adhesion strength is small.

As described above, the thin film conductor layer is made of Cu, B
The main component is an element M1 selected from i, In, Mo, Nb, Pt, W, Zn, and Ni. As described above, since the metal / nitride layer also contains M1,
The thin film conductor layer has high adhesion strength to the metal / nitride layer.

Incidentally, like the above-mentioned metal / nitride layer,
A trace amount of oxygen or the like contained in the substrate, the substrate surface, or the film formation atmosphere may slightly diffuse into the thin film conductor layer. Also,
Even if M1 of the thin film conductor layer is mixed with the metal / nitride layer due to intermixing or heat treatment during film formation, the influence on the adhesion strength is small.

The thickness of the thin film conductor layer is preferably 5 nm to 25 μm. This is because if the thickness is less than 5 nm, it is difficult to obtain a sufficiently low resistance value as a conductor layer, while if the thickness exceeds 25 μm, the layer is easily peeled off due to internal stress. A more preferable thickness range is 10 nm to 20 μm. Then, a component having a metal surface is connected to a desired position of the conductor layer.

Incidentally, a conductive layer may be further laminated on such a conductor layer. By stacking the conductive layer on the conductive layer, the conductivity can be improved. In particular, when the conductor layer is formed of a material having relatively low conductivity other than Cu, Au, and Al, it is effective to form a conductive layer made of Cu, Au, or Al.

Next, an AlN substrate according to a second embodiment of the present invention will be described. In this AlN substrate, AlN
A nitride layer described in detail below, a compound layer composed of an element represented by M1 and Al, and a thin film conductor layer mainly composed of an element represented by M1 are provided on a base. I have.

The nitride layer covers the entire surface of the AlN substrate and has the effect of improving the adhesion of the compound layer. This nitride layer is a layer composed of Al and N.
_{When vN100 -v} (v is atomic%), 50 <v <9
9 is in the range. When v is 50 or less, the adhesion strength decreases,
On the other hand, when v is 99 or more, the resistivity of the substrate surface decreases, and it becomes impossible to form a wiring pattern on the substrate. Preferably, the range is 55 ≦ v ≦ 90. The thickness of this nitride layer is preferably 1 nm or more. The reason is 1
If the thickness is less than nm, it is difficult to stably maintain the adhesion strength between the thin film conductor and the base. However, if this layer is too thick, this layer tends to peel off due to internal stress, so the more preferable thickness range is 1 nm to 1 nm.
1 μm. Note that even if a slight amount of oxygen or the like contained in the substrate and on the surface of the substrate slightly diffuses into the nitride layer, the influence on the adhesion strength is small.

The compound layer is a layer formed on the nitride layer as a base layer of the thin film conductor layer, and functions as a bonding layer. This compound layer is a layer composed of Al and a metal represented by M1, and Al _x M1 _100-x (x is atomic%)
When represented by the following expression, the range is 10 <x <90. x is 10
If the value is less than 90%, the adhesion strength between the AlN substrate and the thin film conductor layer cannot be sufficiently increased.
When etching, the etching becomes insufficient, which causes a reduction in resistance between wirings, a short circuit, and the like. Preferably it is in the range of 15 to 88. Further, the reason why the M1 element is used as the other element of the compound layer is that it has high reactivity with Al. The thickness of this compound layer is preferably 1 nm or more. The reason for this is that if the thickness is less than 1 nm, it is difficult to stably maintain the adhesion strength between the thin film conductor and the base. However, if this layer is too thick, it takes a long time to make the circuit board thinner and remove it by etching, and it is difficult to set conditions such as pattern accuracy. Therefore, a more preferable thickness range is 1 to 500 nm.

In this compound layer, Al and M1 may have a concentration gradient in the thickness direction, and the nitride layer side may be Al-rich and the conductor layer side may be M1-rich. Al and M1, which are constituents of this layer, have an effect of improving the adhesion strength between the AlN substrate and the thin-film conductor layer. In addition, even if a trace amount of oxygen or the like contained in the substrate and on the surface of the substrate slightly diffuses into the compound layer, the influence on the adhesion strength is small.

As in the first embodiment, the thin film conductor layer mainly contains the M1 element. As described above, since M1 is also contained in the compound layer, the thin film conductor layer has high adhesion strength to the compound layer.

As in the case of the nitride layer and the compound layer described above, a small amount of oxygen and the like contained in the substrate, the substrate surface, and the film formation atmosphere may slightly diffuse into the thin film conductor layer.
Also, by intermixing and heat treatment during film formation,
Even if M1 of the thin film conductor layer is mixed with the compound layer, the effect on the adhesion strength is small. Furthermore, the preferable range of the thickness of the thin film conductor layer is the same as in the first embodiment, and the conductive layer may be laminated thereon as in the first embodiment.

When the AlN substrate thus configured is used as a circuit board, Ag-Cu, Ag, Ag-Au, Pb-Sn, Au-S
A brazing material or solder layer of one of n and Au-Si is formed, and a component having a metal surface is joined thereon. Brazing material,
The solder may be formed by an optimal method according to the required control amount. The film thickness may be appropriately determined according to the area of the parts to be joined and the like, and a common sense range used for an alumina substrate or the like is sufficient.

Various components having a metal surface can be employed depending on the use of the AlN substrate.
When used as a circuit board, electrode terminals, joining metal for sealing, board supporting parts, joining metal with cooling fins, etc., as long as the joining surface can be joined with brazing material such as Kovar or solder Good.

The AlN substrate, metal / nitride layer (or nitride layer and compound layer), thin-film conductor layer, and brazing material layer described above mutually interdiffuse and inter-form during film formation and annealing. Even when mixing or creating a tilted structure,
As long as the component composition of each layer is within the range of the present invention, the function of the substrate does not deteriorate and no problem occurs. Next, an example of the method for manufacturing an AlN substrate of the present invention will be described.

First, an AlN substrate having a surface roughness sufficient for forming, for example, a thin film circuit is prepared. The surface roughness can be adjusted by polishing the sintered substrate. However, if a sintered substrate using a submicron particle material is used, a desired surface roughness can be obtained without sintering.

Next, thin film layers are sequentially formed. That is,
In the case of the first embodiment, a metal / nitride layer and a thin film conductor layer are sequentially formed, and in the case of the second embodiment, a nitride layer, a compound layer, and a thin film conductor layer are sequentially formed. As a method of forming a thin film of a metal / nitride layer, a nitride layer, a compound layer, and a conductor layer, a general thin film forming method such as vacuum deposition, sputtering, cluster ion beam, ion plating, or ion mixing may be used. The substrate temperature, the atmosphere, the degree of vacuum, and the deposition rate are appropriately adjusted. Prior to the formation of a thin film, the substrate surface is sufficiently cleaned by a wet cleaning method, a reverse sputtering method, etc.
Since 1N is unstable to strong acids and strong alkalis, care must be taken in selecting a cleaning solution. It is preferable to use a neutral cleaning solution. The metal / nitride layer of the first aspect or the second
After forming the nitride layer and the compound layer according to the embodiment, the thin film conductor layer is continuously formed without breaking the vacuum. The substrate temperature may be within a range that does not hinder film formation, and is suitably from room temperature to about 800 ° C.

The patterning of the wiring portion is carried out after the formation of the thin film conductor layer or after the joining of the components, but the former method is generally more convenient in operation. A desired pattern is formed on the thin film conductor layer by a positive or negative resist, and etching or ion milling is performed on each of these layers by a wet method or a dry method to form a wiring pattern, thereby manufacturing a circuit board.

In the case where the AlN substrate of the present invention is used as a circuit board, an Ag-
Cu, Ag, Ag-Au, Pb-Sn, Au-Sn, A
One kind of brazing material or solder layer of u-Si is formed.
In this case, a method of printing a thick film or forming a thin film on a metal pattern to be preformed on the thin film conductor layer may be used. The joining condition with the component having the metal surface is not problematic as long as it is within the working range of the brazing material or the solder, for example, Ag-C
For u, the temperature is 800 to 850 ° C. for 3 minutes. In such a circuit board, a thin film resistor and a thin film capacitor may be formed as necessary.

[0034]

According to the present invention, in the first embodiment, the metal / nitride layer and the thin film conductor layer are constituted as described above, and in the second embodiment, the nitride layer, the compound layer and the thin film conductor layer are constituted as described above. Therefore, the thin film conductor can be formed with extremely high adhesion strength to the AlN substrate, and a component having a metal surface thereon can be joined with high adhesion strength.

That is, in general, when a thin film layer is formed on an AlN substrate with high adhesion strength, it depends on the magnitude of chemical reactivity, the lattice constant between the thin film layer and the substrate, the difference in thermal expansion coefficient, and the like. As described above, the metal / nitride layer in the first embodiment has a configuration containing Al-M1 and AlN at a predetermined ratio, and the Al-M1 has an AlN base and a conductor layer formed of M1. Has the effect of improving the adhesion strength of Al, especially the adhesion strength at the time of brazing at a high temperature, and AlN as another component prevents reaction between M1 and Al-M1 of the conductor layer, and Al-M1 Has the effect of alleviating the characteristic deterioration of Further, the nitride layer in the second aspect has an effect of improving the adhesion strength between the AlN substrate and the compound layer, and the compound layer is used for the adhesion strength between the nitride layer and the thin film conductor layer, particularly when brazing at a high temperature. Has the effect of improving the adhesion strength of

As a result, by forming the thin film conductor layer on the metal nitride layer or the compound layer, the adhesion strength of the thin film conductor layer to the substrate can be increased, and the peeling of the thin film conductor layer can be prevented. it can. Accordingly, it is possible to prevent the peeling or disconnection of the brazing parts, and to obtain a highly reliable circuit board useful for a semiconductor module and capable of high-density mounting of active elements and the like.

[0037]

Embodiments of the present invention will be described below. (First embodiment)

First, an embodiment corresponding to the first aspect will be described. Under the conditions shown in Tables 1 and 2, a thin film layer was formed on the AlN substrate, brazing was performed, and a thin film capacitor and a thin film resistor were joined as necessary, thereby producing circuit boards Nos. 1 to 16. In the table, Nos. 1 to 12 are Examples in which the metal / nitride layer is within the composition range of the present invention, and Nos. 13 to 1
Reference numeral 5 is a comparative example out of the composition range, and reference numeral 16 is a reference example in which the conductor layer is out of the preferable thickness range.

In the production of Examples Nos. 1 to 12, AlN substrates having the thermal conductivity and oxygen content shown in Table 1 were lapped and polished as they were, or as needed. Later, the surface is wet-cleaned,
Reverse sputtering was performed, and under the conditions shown in Table 2,
A nitride layer and a thin film conductor layer were formed. Next, after forming a wiring pattern with a positive resist, Ni is an etchant of CuSO ₄ + HCl + ethyl alcohol + deionized water, W is a hydrogen peroxide + pure water etchant, and Bi, Nb, Zn, Mo, and In are nitric acid + H
F + pure water etchant, Cu is ammonium persulfate +
Pt was etched with pure water etchant with pure water etchant. The metal / nitride layer could be etched by each etchant. After this, the necessary parts are shown in Table 1.
The cover pin was brazed or soldered with the brazing material or solder shown in (1). Further, a thin film resistor and a thin film capacitor were formed on the substrate surface as needed.

In the case of the comparative examples Nos. 13 to 15 and the reference example No. 16, the AlN substrates shown in Table 1 were burned as they were in the same manner as Nos. 1 to 12, or as needed. After lapping and polishing, the thin film layer
The film was formed under the following method and conditions. Next, after a wiring pattern was formed with a positive resist, etching was performed with the same etchant as in the example.

After forming the wiring on the substrate in this way, an adhesion strength test, a temperature cycle test of 1000 cycles (held at -50 to 150 ° C. for 30 minutes), a pressure cooker test of 1000 hours (121 ° C., 2atm), 50
A heat resistance test at 0 ° C. for 5 minutes was performed to evaluate the presence or absence of disconnection and peeling, and the insulation resistance between wirings (interval: 60 μm). Table 3 shows the results. Table 3 also shows the capacitance of the thin film capacitor and the resistance value of the thin film resistor.

As shown in Table 3, numbers 1 to 5 of the embodiment
In No. 12, the adhesion strength of the wiring pattern to the substrate is 1
00MPa or more was sufficient, and the adhesion strength after brazing and soldering was 30MPa or more. Even after the temperature cycle test, the pressure cooker test, and the heat resistance test, there was no disconnection or peeling, and the insulation resistance was confirmed to be sufficiently practical as 550 GΩ or more.

On the other hand, Comparative Examples Nos. 13 and 14 and Reference Example 16 all had lower adhesion strengths than those of the Examples, and showed a temperature cycle test, a pressure cooker test,
After the heat test, disconnection and peeling were observed in the wiring pattern. Further, with respect to the comparative example No. 15, the resistance between the wirings was low, and it was confirmed that the etching was insufficient. (Second embodiment)

Next, an embodiment corresponding to the second aspect will be described. Under the conditions shown in Tables 4 and 5, a thin film layer was formed on the AlN substrate, brazing was performed, and a thin film capacitor and a thin film resistor were joined as necessary, thereby producing circuit boards Nos. 17 to 32. In the table, Nos. 17 to 28 are Examples in which the nitride layer and the compound layer are within the composition range of the present invention, Nos. 29 to 31 are Comparative Examples out of the composition range, and No. 3
Reference numeral 2 is a reference example in which the conductor layer is out of the preferred thickness range.

In the production of Examples Nos. 17 to 28, the AlN substrates having the thermal conductivity and the oxygen content shown in Table 4 were lapped and polished as they were, or as needed. Later, the surface is wet-cleaned,
Reverse sputtering was performed to form a nitride layer, a compound layer, and a thin film conductor layer shown in Table 4 under the conditions shown in Table 5.

Thereafter, wiring pattern formation and etching were performed under the same conditions as in the first embodiment. The compound layer could be etched by each etchant. Thereafter, in the same manner as in the first embodiment, Kovar pins are brazed or soldered to necessary portions with a brazing material or solder as shown in Table 3, and a thin film resistor and a thin film capacitor are formed on the substrate surface as necessary. did.

In the case of the comparative examples Nos. 29 to 31 and the reference example No. 32, the AlN substrates shown in Table 3 were baked or wrapped as necessary, as in the case of Nos. 17 to 28. After polishing, the thin film layer
The film was formed under the following method and conditions. Next, after a wiring pattern was formed with a positive resist, etching was performed using the same etchant as in the example.

After the wiring was formed on the substrate in this manner, an adhesion strength test, a temperature cycle test, a pressure cooker test, and a heat resistance test were performed under the same conditions as in the first embodiment, and disconnection and peeling were performed. Presence, between wires (interval 60μm)
Was evaluated for insulation resistance. Table 6 shows the results. In addition,
Table 6 shows the capacitance of the thin film capacitor and the resistance value of the thin film resistor.

As shown in Table 6, the embodiment No. 17
In Nos. To 28, the adhesion strength of the wiring pattern to the substrate was 100 MPa or more, and the adhesion strength after brazing and soldering was 45 MPa or more. Disconnection after temperature cycle test, pressure cooker test, heat resistance test,
There was no peeling or the like, and the insulation resistance was 550 GΩ, which was sufficiently practical.

On the other hand, in Comparative Examples Nos. 29 and 30 and Reference Example 32, the adhesive strength was lower than that of the Examples, and the temperature cycle test, pressure cooker test,
After the heat test, disconnection and peeling were observed in the wiring pattern. Further, it was confirmed that the inter-wiring resistance of Comparative Example No. 31 was low and the etching was insufficient.

[0051]

[Table 1]

[0052]

[Table 2]

[0053]

[Table 3]

[0054]

[Table 4]

[0055]

[Table 5]

[0056]

[Table 6]

[0057]

According to the present invention, the thin-film conductor layer and the AlN
An AlN substrate having a high adhesion strength to a substrate can be provided. Such an AlN substrate is suitable for a highly reliable circuit board on which high-density mounting of active elements and the like can be performed, since components having a metal surface can be bonded with high adhesion strength.

Continued on the front page (72) Inventor Kaoru Koiwa 70, Yanagimachi, Yukicho, Kawasaki-shi, Kanagawa Prefecture, Japan Inside the Toshiba Yanagicho Plant (72) Inventor Nobuo Iwase 70, Yanagimachi, Yukicho, Kawasaki-shi, Kanagawa Prefecture, Japan Toshiba Yanagicho Factory (56) References Patent 2664744 (JP, B2) Patent 2685806 (JP, B2) (58) Fields investigated (Int. Cl. ⁷ , DB name) H05K 1/03 H05K 1/09 H05K 3/38

Claims (2)

(57) [Claims] An AlN substrate and a CN provided on the substrate,
u, Bi, In, Mo, Nb, Pt, W, Zn, and a is the element M1, Al and N chosen from among Ni Al _x M1
_100-x : AlN = y: z (where x is atomic%, z, y
Is the molecular%, z + y = 100, and 10 ≦ x ≦ 9, respectively.
0, 50 ≦ y ≦ 99, 1 ≦ z ≦ 50), and a thin film mainly composed of M1 laminated on the metal / nitride layer An AlN substrate comprising: a conductor layer; and a component having a metal surface bonded to a predetermined position of the thin film conductor layer. 2. An AlN substrate and an AlN substrate provided on the substrate.
l _v N _100-v (however, v is in atomic%, 50 <v <99
And a nitride layer provided on the nitride layer and containing Cu, Bi, In, Mo, Nb, Pt,
The elements M1 and Al selected from W, Zn and Ni are represented by Al _x M1 _100-x (where x is atomic% and 10 ≦ x ≦
90), and a thin-film conductor layer mainly composed of M1 laminated on the compound layer, and a metal surface is formed at a predetermined position of the thin-film conductor layer. An AlN substrate, wherein components having the same are joined.