JP2660631B2 - Resin-sealed semiconductor device - Google Patents

Resin-sealed semiconductor device

Info

Publication number
JP2660631B2
JP2660631B2 JP4092375A JP9237592A JP2660631B2 JP 2660631 B2 JP2660631 B2 JP 2660631B2 JP 4092375 A JP4092375 A JP 4092375A JP 9237592 A JP9237592 A JP 9237592A JP 2660631 B2 JP2660631 B2 JP 2660631B2
Authority
JP
Japan
Prior art keywords
resin
semiconductor device
particle size
package
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP4092375A
Other languages
Japanese (ja)
Other versions
JPH05267371A (en
Inventor
正次 尾形
州志 江口
正則 瀬川
裕之 宝蔵寺
利昭 石井
邦彦 西
昭彦 岩谷
健一 井村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
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Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4092375A priority Critical patent/JP2660631B2/en
Publication of JPH05267371A publication Critical patent/JPH05267371A/en
Application granted granted Critical
Publication of JP2660631B2 publication Critical patent/JP2660631B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73215—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip

Landscapes

  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【産業上の利用分野】本発明は樹脂封止型半導体装置に
係り、特に、熱応力の発生が少なく、耐はんだリフロー
性、実装後の耐温度サイクル性、耐湿信頼性等に優れた
樹脂封止型半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-encapsulated semiconductor device, and more particularly to a resin-encapsulated semiconductor device having little thermal stress, excellent solder reflow resistance, temperature cycle resistance after mounting, and moisture resistance reliability. The present invention relates to a stop type semiconductor device.

【０００２】[0002]

【従来の技術】半導体素子を外部環境から保護し、プリ
ント基板への実装を容易にするためのパッケージ技術と
して、従来から樹脂封止技術が広く用いられている。し
かし、半導体素子はこれまで３年に４倍のピッチで高集
積度化が進み、それに伴って素子サイズの大型化が進ん
でいる。また、素子の高性能、多機能化に伴い、ピン数
の増加も進んでいる。一方、各種エレクトロニクス機器
の小型軽量化、高性能化などのニーズから、各種半導体
装置には実装の高密度化が強く望まれ、パッケージは小
型薄型化の趨勢にある。その結果、樹脂封止型半導体装
置の封止樹脂層は次第に薄型化する傾向にある。また、
パッケージの形状も従来はピンをプリント基板のスルー
ホールに差し込んで実装するＤＩＰ（ Dual Inline Pla
stic Package )、ＺＩＰ（ Zigzag Inline Plastic Pac
kage )、ＳＩＰ（ Single Inline Plastic Package )な
どのいわゆるピン挿入型が主流であった。しかし、ここ
数年来実装の高密度化を図るために、ＳＯＰ（ Small O
utline Plastic Package )、ＳＯＪ（ Small Outline J
-lead Plastic Package ) 、ＱＦＰ（ Quad Flat Plast
ic Package )といった両面実装が可能で、しかもパッケ
ージサイズが小さな表面実装型のパッケージの需要が急
増している。このようなパッケージの厚みは、特に装置
や部品の薄型化を図るうえで極めて重要である。そのた
め、最近はＴＳＯＰ（ Thin Small Outline Plastic Pa
ckage ) 、ＴＳＯＪ（ Thin Small Outline J-lead Pla
stic Package )、ＴＱＦＰ（ Thin Quad Flat Plastic
Package ) といった厚さが１ｍｍ程度の極薄型パッケー
ジやチップの回路形成面のみを封止した厚さが０．５ｍ
ｍの超薄型パッケージの開発も進められている。2. Description of the Related Art Resin sealing technology has been widely used as a package technology for protecting a semiconductor element from an external environment and facilitating mounting on a printed circuit board. However, the integration density of semiconductor elements has been increasing four times in three years, and the element size has been increasing accordingly. In addition, the number of pins has been increasing along with high performance and multifunctional elements. On the other hand, due to the needs for various electronic devices to be smaller and lighter and to have higher performance, it is strongly desired that various semiconductor devices have higher mounting density, and packages are becoming smaller and thinner. As a result, the sealing resin layer of the resin-sealed semiconductor device tends to become thinner gradually. Also,
Conventionally, the DIP (Dual Inline Plain) package is mounted by inserting pins into through holes of a printed circuit board.
stic Package), ZIP (Zigzag Inline Plastic Pac
kage) and SIP (Single Inline Plastic Package). However, in order to increase the mounting density in recent years, SOP (Small O
utline Plastic Package), SOJ (Small Outline J
-lead Plastic Package), QFP (Quad Flat Plast)
The demand for surface-mount packages that can be mounted on both sides (i.e., ic Package) and has a small package size is rapidly increasing. The thickness of such a package is extremely important, particularly for reducing the thickness of the device and components. Therefore, recently TSOP (Thin Small Outline Plastic Pa)
ckage), TSOJ (Thin Small Outline J-lead Pla)
stic Package), TQFP (Thin Quad Flat Plastic)
(Package), a very thin package with a thickness of about 1 mm, and a thickness of 0.5 m that seals only the circuit forming surface of the chip.
m ultra-thin packages are also being developed.

【０００３】[0003]

【発明が解決しようとする課題】しかし、このようなチ
ップの大型化、多ピン化、パッケージの小型薄肉化、表
面実装化が進むにつれ、樹脂封止型半導体装置を製造す
るうえで重要な技術課題が発生している。すなわち、従
来のピン挿入型パッケージはプリント基板のスルーホー
ルに差し込んだ状態で、プリント基板ごとはんだ槽に浮
かべはんだ付けが行なわれていたため、実装時にパッケ
ージ本体が直接高温に曝されることはなかった。ところ
が、表面実装型パッケージは一般に赤外線リフローある
いはベーパーリフロー方式によるはんだ付けが行われ、
実装時にパッケージ全体が直接２００数十度の高温に曝
される。半導体の樹脂封止には通常エポキシ樹脂系の封
止材料が広く用いられている。However, as the size of the chip is increased, the number of pins is increased, the size and thickness of the package are reduced, and the surface mounting is advanced, an important technology for manufacturing a resin-encapsulated semiconductor device. Challenges are occurring. That is, since the conventional pin insertion type package was inserted into the through-hole of the printed circuit board and was floated and soldered together with the printed circuit board in the solder bath, the package body was not directly exposed to high temperature during mounting. . However, surface mount packages are generally soldered by infrared reflow or vapor reflow.
At the time of mounting, the entire package is directly exposed to a high temperature of over 200 degrees. In general, epoxy resin-based sealing materials are widely used for semiconductor resin sealing.

【０００４】しかし、エポキシ樹脂系封止材料は一般に
かなりの透湿性を有し、パッケージの中には常に少量の
水分が存在する。また、封止材料と半導体装置を構成す
るリードフレーム、シリコンチップ、金線、パッシベー
ション膜等との接着は必ずしも充分ではなく、パッケー
ジ内部には隙間や微小ボイド等の欠陥が存在する。その
ため、パッケージ内部の水分が所定量を超えた状態で加
熱されると水分が急激に蒸発し、その蒸気圧によってパ
ッケージ内部に応力が発生し、パッケージを構成する各
材料間に剥離あるいはパッケージクラック、金線の断線
等を生じ素子特性や実装後の信頼性を損なう問題が顕在
化してきた。このような水蒸気圧によって発生する熱応
力はチップが大型化すればするほど大きくなる。また、
パッケージの封止樹脂層が薄肉化すればするほどパッケ
ージ内部には水分が侵入し易くなり、パッケージは強度
的に弱くなる。そのため、チップの大型化や封止樹脂層
の薄肉化が進むにつれこのような問題がますます発生し
易くなっており、その解決が強く望まれていた。However, epoxy resin-based sealing materials generally have considerable moisture permeability, and a small amount of moisture is always present in a package. In addition, adhesion between the sealing material and a lead frame, a silicon chip, a gold wire, a passivation film, or the like that forms a semiconductor device is not always sufficient, and defects such as gaps and minute voids exist inside the package. Therefore, when the moisture inside the package is heated in a state exceeding a predetermined amount, the moisture evaporates rapidly, and a stress is generated inside the package due to the vapor pressure, and peeling or package cracking occurs between materials constituting the package. The problem of breaking of the gold wire and the like and impairing device characteristics and reliability after mounting has become apparent. The thermal stress generated by such water vapor pressure increases as the size of the chip increases. Also,
The thinner the sealing resin layer of the package, the more easily moisture penetrates into the package, and the weaker the package. For this reason, as the size of the chip increases and the thickness of the sealing resin layer progresses, such a problem is more likely to occur, and a solution to the problem has been strongly desired.

【０００５】一方、半導体の樹脂封止に用いられてきた
従来の封止材料は、熱膨張係数が回路を形成するシリコ
ンチップ（約３×１０-6／℃）に比べると４倍以上大き
い。そのため、パッケージ内部には熱膨張係数のミスマ
ッチに起因する熱応力が発生し、それによって、シリコ
ンチップの変形、破損、素子特性の変動、パッケージ内
部のリードフレームと封止材料あるいはシリコンチップ
と封止材料間の接着部分の剥離、パッケージクラックな
どの問題も発生し易くなっている。この問題をパッケー
ジの構造面から解決する方法としては、シリコンチップ
の回路形成面並びに裏面の封止樹脂層の厚さを等しく
し、チップの両面に発生する熱応力をバランスさせる方
法がある。しかし、実際には樹脂封止を行なう際に封止
樹脂の流動抵抗によってシリコンチップやリードフレー
ムが変動するため、そのコントロールが難しく、また、
パッケージ全体の厚みを薄くできない等といった問題が
あった。さらに、近年は実装の高密度化を図るためにシ
リコンチップの回路形成面のみを樹脂封止し、パッケー
ジの超薄型化を図る試みがなされている。しかし、現状
ではシリコンチップと封止材料の熱膨張係数のミスマッ
チによって発生する熱応力によってパッケージに１００
μｍ以上の反りが発生し、それによってシリコンチップ
が破損したり特性が変動するといった問題があり、この
ような超薄型パッケージはまだ製品化されていない。そ
のため、このような熱応力の問題についても根本的な解
決が強く望まれていた。On the other hand, a conventional sealing material used for resin sealing of a semiconductor has a coefficient of thermal expansion four times or more larger than a silicon chip (about 3 × 10 −6 / ° C.) forming a circuit. As a result, thermal stress is generated inside the package due to a mismatch in the coefficient of thermal expansion, which causes deformation and breakage of the silicon chip, fluctuations in device characteristics, lead frame and sealing material inside the package, or sealing with the silicon chip. Problems such as peeling of a bonded portion between materials and package cracking are also likely to occur. As a method of solving this problem from the viewpoint of the structure of the package, there is a method of equalizing the thickness of the sealing resin layer on the circuit forming surface and the back surface of the silicon chip and balancing the thermal stress generated on both surfaces of the chip. However, since the silicon chip and the lead frame fluctuate due to the flow resistance of the sealing resin when performing the resin sealing, the control is difficult, and
There has been a problem that the thickness of the entire package cannot be reduced. Further, in recent years, attempts have been made to make the package ultra-thin by sealing only the circuit forming surface of the silicon chip with resin in order to increase the mounting density. However, at present, 100 mm is applied to the package due to the thermal stress generated by the mismatch between the thermal expansion coefficients of the silicon chip and the sealing material.
There is a problem in that warpage of μm or more occurs, which causes damage to the silicon chip and changes in characteristics. Such an ultra-thin package has not yet been commercialized. Therefore, a fundamental solution to such a problem of thermal stress has been strongly desired.

【０００６】また、樹脂封止型半導体のパッケージ内部
に発生する熱応力を低減する方法として、従来封止材料
のベースエポキシ樹脂を特殊なシリコーン化合物で変性
し封止材料の弾性率を小さくする方法や充填剤を高充填
して熱膨張係数を小さくする方法が実用されている。し
かし、パッケージ内部に発生する熱応力の低減はまだま
だ不充分である。一方、樹脂封止型半導体部品のプリン
ト基板に実装する場合にパッケージに発生する内部剥離
やクラックを防止する方法としては、実装に先立ってパ
ッケージを予備乾燥する方法が採用されている。しか
し、この方法はパッケージの水分管理や乾燥作業などの
煩雑さを伴う。そのためパッケージが吸湿した状態で実
装を行っても内部剥離やクラックが発生しないようにす
ることが強く望まれている。そこで、これらの課題を解
決する方法について種々検討を行った。その結果、パッ
ケージ内部に発生する熱応力の直接的原因であるシリコ
ンチップと封止材料の熱膨張係数の差は依然４倍以上あ
り、封止材料の熱膨張係数を限りなくシリコンチップに
近づけることが不可欠なこと、封止材料のリードフレー
ムやシリコンチップに対する接着性を高めパッケージ内
部に水分の溜り場所をつくらないようにすること、封止
材料の吸湿率を小さくしてパッケージ内部に侵入する水
分の絶対量を減らすこと並びに封止材料の高温強度を高
め、熱応力によってパッケージが破損しないようにする
こと、さらに、これらの課題は全て同時に満足させねば
ならないことが明らかになった。As a method of reducing the thermal stress generated inside the package of the resin-sealed semiconductor, a method of modifying the base epoxy resin of the conventional sealing material with a special silicone compound to reduce the elastic modulus of the sealing material. And a method of reducing the coefficient of thermal expansion by high filling with a filler has been put to practical use. However, the reduction of the thermal stress generated inside the package is still insufficient. On the other hand, as a method of preventing internal peeling or cracking occurring in a package when the resin-encapsulated semiconductor component is mounted on a printed circuit board, a method of pre-drying the package prior to mounting is adopted. However, this method involves complicated operations such as moisture management and drying of the package. Therefore, it is strongly desired that internal peeling and cracking do not occur even when the package is mounted with moisture absorbed. Therefore, various studies were made on a method for solving these problems. As a result, the difference between the thermal expansion coefficient of the silicon chip and the thermal expansion coefficient, which is a direct cause of the thermal stress generated inside the package, is still more than four times, and the thermal expansion coefficient of the sealing material should be as close as possible to the silicon chip. It is essential to increase the adhesion of the encapsulant to the lead frame and silicon chip so as not to create a pool of moisture inside the package, and to reduce the moisture absorption rate of the encapsulant to allow moisture to enter the package It has been found that reducing the absolute amount of, as well as increasing the high temperature strength of the encapsulant so that the package is not damaged by thermal stress, and that all of these challenges must be met at the same time.

【０００７】封止材料は一般に充填剤を増量すると粘度
が上昇し流動性が低下する。また、封止材料の高温強度
を向上させるためにベース樹脂の耐熱性を高めようとす
ると、硬化したベース樹脂は内部応力が増大し接着性が
低下し、さらに、自由体積の増大によって吸湿率が大き
くなる傾向がある。そのため、これらの課題を全て同時
に満足することは極めて難しく、これまで旨い解決法が
見出せなかった。本発明はこのような状況に鑑みなされ
たものであり、大型チップを小型薄肉の表面実装型のパ
ッケージに封止した際、特に、パッケージ内部に発生す
る熱応力が小さく、かつ、実装時の加熱によってパッケ
ージ内部の剥離、クラック、金線の断線及び実装後の耐
湿信頼性の低下を起こしにくい樹脂封止型半導体装置を
提供することを目的とする。[0007] Generally, as the amount of filler is increased, the viscosity of the sealing material increases and the fluidity of the sealing material decreases. In addition, if the heat resistance of the base resin is increased to improve the high-temperature strength of the sealing material, the internal stress of the cured base resin increases, the adhesiveness decreases, and the moisture absorption rate increases due to the increase in free volume. Tends to be larger. Therefore, it is extremely difficult to satisfy all of these problems at the same time, and no satisfactory solution has been found so far. The present invention has been made in view of such a situation, and when a large chip is sealed in a small and thin surface mount type package, particularly, thermal stress generated inside the package is small and heating during mounting is performed. It is an object of the present invention to provide a resin-encapsulated semiconductor device that is unlikely to cause peeling, cracking, breaking of a gold wire, and reduction in moisture resistance reliability after mounting.

【０００８】[0008]

【課題を解決するための手段】上記目的を達成するため
に、本発明では、半導体素子に形成された電極とリード
が電気的に接続され、少なくとも素子の回路形成面を
（ａ）エポキシ樹脂、（ｂ）硬化剤、（ｃ）硬化促進剤
及び（ｄ）無機質充填剤を必須成分とする樹脂組成物で
封止した樹脂封止型半導体装置において、上記樹脂組成
物を構成する（ａ）エポキシ樹脂及び（ｂ）硬化剤から
なる樹脂成分は１５０℃における粘度が３ポイズ以下で
あり、（ｄ）の無機質充填剤はその９５％以上が粒径
０．１から１００μｍの範囲にあり、平均粒径が２から
２０μｍの実質的に球状の溶融シリカ粉末であり、か
つ、当該溶融シリカ粉末は組成物全体に対して８０から
９２．５ｖｏｌ％の範囲で配合され、しかも、上記樹脂
組成物は加圧成形過程における最低溶融粘度が３０００
ポイズ以下、加圧成形後は熱膨張定数が１．０×１０
−５／℃以下の樹脂組成物を用いることとしたものであ
る。In order to achieve the above object, according to the present invention, an electrode formed on a semiconductor element is electrically connected to a lead, and at least a circuit forming surface of the element is made of epoxy resin, In a resin-sealed semiconductor device sealed with a resin composition containing (b) a curing agent, (c) a curing accelerator, and (d) an inorganic filler as an essential component, (a) an epoxy constituting the resin composition The resin component consisting of the resin and the curing agent (b) has a viscosity at 150 ° C. of 3 poise or less, and the inorganic filler of (d) has 95% or more in the particle size range of 0.1 to 100 μm, It is a substantially spherical fused silica powder having a diameter of 2 to 20 μm, and the fused silica powder is blended in a range of 80 to 92.5 vol% with respect to the whole composition, and the resin composition is added. During the pressing process Melt viscosity of 3000
Poise, thermal expansion constant after pressure molding is 1.0 × 10
In this case, a resin composition having a temperature of -5 / C or lower is used.

【０００９】前記の樹脂組成物において、（ａ）エポキ
シ樹脂は、少なくともビスフェノールＡ骨格、ビフェニ
ール骨格あるいはナフタレン骨格を有する２官能型のエ
ポキシ樹脂から選ばれる成分を用いるのがよく、（ｂ）
硬化剤は、分子内にフェノール性水酸基を２個以上含む
フェノール系化合物を用いるのがよいし、また、（ｃ）
硬化促進剤は、（ａ）エポキシ樹脂及び（ｂ）硬化剤か
らなる樹脂成分に０．１から５ｗｔ％の範囲で配合さ
れ、加圧成形温度の１５０から２００℃で硬化反応を促
進させた場合に、硬化反応の活性化エネルギーが１７ｋ
ｃａｌ／ｍｏｌ以上の値を示すリン系又は含窒素系の化
合物を用いるのがよい。In the above resin composition, the epoxy resin (a) is preferably a component selected from a bifunctional epoxy resin having at least a bisphenol A skeleton, a biphenyl skeleton or a naphthalene skeleton, and (b)
As the curing agent, a phenolic compound containing two or more phenolic hydroxyl groups in the molecule is preferably used, and (c)
When the curing accelerator is blended with the resin component consisting of (a) the epoxy resin and (b) the curing agent in a range of 0.1 to 5 wt%, and the curing reaction is accelerated at a pressing temperature of 150 to 200 ° C. The activation energy of the curing reaction is 17k
It is preferable to use a phosphorus-based or nitrogen-containing compound having a value of cal / mol or more.

【００１０】さらに、上記（ｄ）球状の溶融シリカ粉末
は、その粒度分布をＲＲＳ粒度線図にプロットした場合
に最大粒径及び最小粒径部分を除いた少なくとも残りの
７０重量％以上の溶融シリカ粉末が存在する粒径部分が
実質的に直線性を示し、かつ、その勾配が０．６から
１．０の範囲にあるものが使用でき、特に溶融シリカを
用いるのがよく、また、球状の溶融シリカ粉末はあらか
じめその表面がシラン、アルミキレート又はチタネート
系のカップリング剤の単分子層以上の厚みで被覆処理し
たものを用いてもよい。上記（ａ）エポキシ樹脂及び
（ｂ）硬化剤からなる樹脂成分は、その０．１から２０
ｗｔ％がシリコーン系化合物、ポリブタジエン系ゴム、
熱可塑性エラストマーあるいは熱可塑性樹脂で変性又は
改質したものを用いることもできる。また、半導体素子
の電極とリード間の電気的接続は、電極又はリード上に
形成したバンプを介して行なうのがよい。Further, when the particle size distribution of the (d) spherical fused silica powder is plotted on an RRS particle size diagram, at least the remaining 70% by weight excluding the maximum particle size and the minimum particle size portions is obtained. The particle diameter portion in which the above fused silica powder is present shows substantially linearity, and a gradient having a range of 0.6 to 1.0 can be used, and it is particularly preferable to use fused silica. Further, the spherical fused silica powder may be used whose surface is previously coated with a silane, aluminum chelate or titanate-based coupling agent with a thickness of at least a monomolecular layer. The resin component consisting of the above (a) epoxy resin and (b) curing agent has a content of 0.1 to 20%.
wt% is a silicone compound, polybutadiene rubber,
Those modified or modified with a thermoplastic elastomer or a thermoplastic resin can also be used. The electrical connection between the electrode of the semiconductor element and the lead is preferably made via a bump formed on the electrode or the lead.

【００１１】[0011]

【作用】本発明において、エポキシ樹脂と硬化剤からな
る樹脂成分の１５０℃における粘度を３ポイズ以下とす
るのは、充填剤を多量に配合した樹脂組成物の加圧成形
過程における粘度上昇、流動性の低下を防止するためで
ある。エポキシ樹脂として、少なくともビスフェノール
Ａ骨格、ビフェノール骨格あるいはナフタレン骨格を有
する２官能型のエポキシ樹脂から選ばれる成分を用いる
理由は、これらのエポキシ樹脂は溶融粘度が低いうえに
諸物性が良好な硬化物を得ることができるためである。
また、硬化剤として分子内にフェノール性水酸基を２個
以上含むフェノール系化合物を用いる理由も、一般に硬
化剤としてフェノール化合物を用いると諸物性が良好な
硬化物が得られるためである。充填剤としてその９５重
量％以上が粒径０．１から１００μｍの範囲にあり、か
つ、平均粒径が２から２０μｍの実質的に球状の溶融シ
リカ粉末を使用する理由は、このような充填材はその最
大充填分率が高くなり、樹脂組成物に高充填した場合に
粘度上昇流動性の低下が起きにくいためである。特に、
粒度分布をＲＲＳ粒度線図にプロットした場合に、直線
の勾配を表わすｎが０．６から１．０の範囲の値を示
す。換言すると粒度分布が広い充填剤を用いると、充填
剤自体の最大充填分率が９０％以上の高い値が得られる
ため、樹脂組成物の粘度上昇、流動性の低下が起こりに
くく、本発明の目的を達成するのに有利である。In the present invention, the viscosity at 150 ° C. of the resin component consisting of the epoxy resin and the curing agent is set to 3 poise or less because the viscosity increase and the flow during the pressure molding process of the resin composition containing a large amount of filler are considered. This is for preventing the deterioration of the property. The reason for using a component selected from a bifunctional epoxy resin having at least a bisphenol A skeleton, a biphenol skeleton or a naphthalene skeleton as the epoxy resin is that these epoxy resins have a low melt viscosity and a cured product having good physical properties. This is because they can be obtained.
The reason for using a phenolic compound having two or more phenolic hydroxyl groups in the molecule as a curing agent is also because a phenol compound is generally used as a curing agent to obtain a cured product having various physical properties. There from the 95 wt% or more having a particle size of 0.1 as a filler in the range of 100 [mu] m, and melt from the average particle size of 2 to 20μm substantially spherical Shi
The reason for using lica powder is that such a filler has a high maximum filling fraction, and when the resin composition is highly filled, a decrease in viscosity and a decrease in fluidity are unlikely to occur. Especially,
When plotting the particle size distribution in the RRS particle size diagram, n representing the slope of the line indicates a value ranging from 0.6 to 1.0. In other words, when a filler having a wide particle size distribution is used, the maximum filling fraction of the filler itself is as high as 90% or more, so that the increase in viscosity and the decrease in fluidity of the resin composition hardly occur, and It is advantageous to achieve the purpose.

【００１２】すなわち、本発明のＲＲＳ粒度線図で勾配
ｎが０．６から１．０を示す球状の溶融シリカ粉末から
なる充填剤は、粒度分布が広い、つまり粒径が大きなも
のから小さなものまであるため、粒子と粒子の隙間に別
の粒子が詰まり、充填剤自体の最大充填分率が高いため
に、これを樹脂に配合した場合、充填剤同士のぶつかり
合いが起りにくく粘度が上がりにくくなる。また、充填
剤が実質的に球形のため充填剤同士が接触した場合、お
互いに滑りが良いためこれも粘度を上げにくくする。溶
融シリカ粉末からなる充填剤は配合量を８０から９２．
５ｖｏｌ％の範囲で用いるのは、８０ｖｏｌ％未満では
樹脂組成物の熱膨張係数が大きすぎるためであり、ま
た、９２．５ｖｏｌ％を超えると樹脂組成物の粘度が上
昇して流動性が著しく低下してしまうためである。ここ
で、充填剤の配合量を容量％で規定する理由は、充填剤
はその種類によって比重が異なるためである。本発明で
用いる溶融シリカ粉末では、８０〜９２．５ｖｏｌ％
は、８８〜９５．９重量％に相当する。That is, from the spherical fused silica powder having a gradient n of 0.6 to 1.0 in the RRS particle size diagram of the present invention.
Comprising fillers, the particle size distribution is wide, that is because the particle size is to small ones from large, separate particles clogging the gap between the particles and the particles, because of the high maximum packing fraction of the filler itself, this When blended with a resin, it is difficult for the fillers to collide with each other, and it is difficult to increase the viscosity. Further, when the fillers are in contact with each other because the fillers are substantially spherical, it is difficult for the fillers to increase in viscosity because of good sliding. Dissolution
The amount of the filler composed of fused silica powder is from 80 to 92.
The reason why it is used in the range of 5 vol% is that if it is less than 80 vol%, the thermal expansion coefficient of the resin composition is too large, and if it exceeds 92.5 vol%, the viscosity of the resin composition increases and the fluidity is remarkable. This is because it will decrease. Here, the reason why the blending amount of the filler is specified by volume% is that the specific gravity of the filler differs depending on the type. In the present invention
In the fused silica powder used, 80 to 92.5 vol%
Corresponds to 88-95.9% by weight .

【００１３】次に、本発明の樹脂組成物の最低溶融粘度
を３０００ポイズ以下に規定する理由を説明する。本発
明の加圧成形用樹脂組成物は、通常１５０から２００℃
に加熱された金型のキャビテー部に移送して硬化が行な
われる。つまり、樹脂組成物は昇温加熱下で硬化する。
この時の樹脂組成物の粘度変化をみると、最初は樹脂の
温度の上昇に伴って低下するが、ある温度以上になると
樹脂の硬化反応が急激に進行するため粘度の急上昇が起
こる。そのため、本発明のような樹脂組成物の硬化過程
における粘度変化はＵないしＶ字型の挙動を示す。この
ような樹脂組成物を用いて実際に成形品を作製する場
合、インサートの変形や充填不良を防止するために金型
内への樹脂組成物の移送は樹脂の粘度が一定の値よりも
低領域で行なう必要がある。その粘度範囲は目的に応じ
て若干異なるが、例えば、半導体装置のようにデリケー
トな構造を有するインサートを成形する場合には最低溶
融粘度（Ｕ字ないしＶ字型カーブの底辺値）が３０００
ポイズ以下にすることが望ましい。次いで、熱膨張係数
（α）の範囲を決める理由について説明する。シリコン
チップのαは約０．３×１０-5／℃である。樹脂組成物
の熱膨張係数がこれからあまりかけ離れると、半導体素
子を封止した場合封止品に発生する熱応力が大きくな
り、パッシベーションクラック、チップクラック、アル
ミニウム配線のスライド、パッケージ（封止樹脂層）ク
ラック、パッケージのねじれや反りなどの不良が発生す
る。これを防止するためには、αは最大でも１．０×１
０-5／℃、望ましくはシリコンチップと同じ０．３×１
０-5／℃が望ましい。Next, the reason why the minimum melt viscosity of the resin composition of the present invention is specified to be 3000 poise or less will be described. The resin composition for pressure molding of the present invention usually has a temperature of 150 to 200 ° C.
Is transferred to the cavities of the mold heated to a predetermined temperature to be cured. That is, the resin composition is cured under heating and heating.
Looking at the change in the viscosity of the resin composition at this time, the viscosity initially decreases with an increase in the temperature of the resin. However, when the temperature exceeds a certain temperature, the curing reaction of the resin rapidly progresses, so that the viscosity sharply increases. Therefore, the change in viscosity during the curing process of the resin composition as in the present invention exhibits a U-shaped or V-shaped behavior. When a molded article is actually produced using such a resin composition, the resin composition is transferred into the mold so that the viscosity of the resin is lower than a certain value in order to prevent deformation of the insert and defective filling. Need to be done in the area. Although the viscosity range is slightly different depending on the purpose, for example, when molding an insert having a delicate structure like a semiconductor device, the minimum melt viscosity (the base value of the U-shaped or V-shaped curve) is 3000.
It is desirable to keep it below poise. Next, the reason for determining the range of the coefficient of thermal expansion (α) will be described. Α of the silicon chip is about 0.3 × 10 −5 / ° C. If the coefficient of thermal expansion of the resin composition is too far from this, the thermal stress generated in the sealed product when the semiconductor element is sealed increases, causing passivation cracks, chip cracks, slides of aluminum wiring, packages (sealing resin layer). ) Defects such as cracks and twisting or warping of the package occur. To prevent this, α is at most 1.0 × 1
0 -5 / ° C, preferably 0.3 × 1 same as silicon chip
0 -5 / ° C is desirable.

【００１４】本発明においては硬化促進剤が重要な役割
を持つ。この硬化促進剤は樹脂の硬化反応を促進するた
めに用いるものである。しかし、通常硬化促進剤は比較
的低温でも樹脂の硬化反応を促進する。本発明の樹脂組
成物はロールや押出し機を用いて樹脂成分と充填剤成分
の混合を行なうが、このような硬化促進剤を用いると混
練時の摩擦によって樹脂が加熱され、それによって樹脂
の硬化反応が進行し、最低溶融粘度が低い樹脂組成物が
得られなくなってしまう。また、このような硬化促進剤
を用いた樹脂組成物は金型内に移送した際、比較的低い
温度から樹脂の硬化反応が進行する。そのため、温度上
昇によって溶融粘度が余り下がらないうちに樹脂の硬化
反応による粘度の上昇が始まり、その結果、最低溶融粘
度がかなり高い値を示すようになり、デリケートな構造
を有するインサートを成形する場合インサートの変形や
充填不良を発生し易くなる。すなわち、通常、半導体封
止材料のような樹脂組成物は、ロールや押出し機を用い
て樹脂が溶融する温度（８０から１００℃）で樹脂と充
填剤の混合を行なう。硬化促進剤は成形温度（通常１７
０から１８０℃）における樹脂のゲル化時間が同じにな
るように加えるため、ゲル化反応の活性化エネルギーが
低い（これは低温でも反応が進行しやすいことを意味す
る）樹脂系は混合中に樹脂の硬化が進行し易いため、出
来上がった材料は粘度が高くなってしまう。In the present invention, a curing accelerator plays an important role. This curing accelerator is used to accelerate the curing reaction of the resin. However, the curing accelerator usually accelerates the curing reaction of the resin even at a relatively low temperature. In the resin composition of the present invention, the resin component and the filler component are mixed by using a roll or an extruder. When such a curing accelerator is used, the resin is heated by friction during kneading, thereby curing the resin. The reaction proceeds, and a resin composition having a low minimum melt viscosity cannot be obtained. Further, when a resin composition using such a curing accelerator is transferred into a mold, the curing reaction of the resin proceeds from a relatively low temperature. Therefore, the viscosity rise due to the curing reaction of the resin before the melt viscosity does not drop much due to the temperature rise, as a result, the lowest melt viscosity becomes a considerably high value, when molding inserts having a delicate structure Deformation of the insert and poor filling are likely to occur. That is, a resin composition such as a semiconductor sealing material is usually mixed with a resin and a filler at a temperature at which the resin is melted (80 to 100 ° C.) using a roll or an extruder. The curing accelerator is used at the molding temperature (usually 17
(0 to 180 ° C.) so that the gelation time of the resin is the same, the activation energy of the gelation reaction is low (this means that the reaction easily proceeds even at a low temperature). Since the curing of the resin proceeds easily, the resulting material has a high viscosity.

【００１５】また、樹脂組成物は１７０から１８０℃に
加熱された金型の中で加熱されながら硬化していく。こ
の時の粘度変化を考えると、最初樹脂組成物は温度上昇
とともに粘度が下がる。ところが樹脂組成物の温度があ
る温度以上になると樹脂の硬化反応が始まるため粘度の
急激な上昇が起る。この時ゲル化反応の活性化エネルギ
ーが小さな樹脂系は比較的低い温度から硬化反応が始ま
るため、すなわち、粘度があまり下がり切らないうちに
粘度上昇が始まるため、この系は最低溶融粘度が高くな
ってしまう。一方、ゲル化反応の活性化エネルギーが大
きな樹脂系は高い温度で硬化反応が始まるため、すなわ
ち、粘度がかなり下がってから樹脂の硬化による粘度上
昇が始まるため、この系は最低溶融粘度が低くなる。こ
のように、比較的低温では樹脂の硬化反応を促進せず、
高温で速やかに樹脂の硬化反応を促進するいわゆる潜在
性硬化促進剤の利用が効果的である。このような潜在性
硬化促進剤としては、硬化促進剤を配合した樹脂組成物
を加圧成形過程すなわち１５０から２００℃の温度範囲
でゲル化時間を測定した場合に、ゲル化反応の活性化エ
ネルギーが高い値を示す硬化促進剤が該当する。活性化
エネルギーとしては１７ｋｃａｌ／ｍｏｌ以上の値を示
す硬化促進剤が望ましい。このような硬化促進剤として
は具体的には、リン系または含窒素系の各種化合物やそ
れらの有機酸塩、ボロン塩等が挙げられる。[0015] The resin composition is cured while being heated in a mold heated to 170 to 180 ° C. Considering the change in viscosity at this time, the viscosity of the resin composition first decreases with increasing temperature. However, when the temperature of the resin composition exceeds a certain temperature, a curing reaction of the resin starts, so that a sharp increase in viscosity occurs. At this time, since the curing reaction starts at a relatively low temperature in a resin system with a small activation energy of the gelling reaction, that is, the viscosity starts to rise before the viscosity decreases too much, so that this system has a high minimum melt viscosity. Would. On the other hand, a resin system with a large activation energy of the gelation reaction starts a curing reaction at a high temperature, that is, the viscosity starts to increase due to the curing of the resin after the viscosity is considerably lowered, so this system has a lower minimum melt viscosity. . Thus, at a relatively low temperature, it does not accelerate the curing reaction of the resin,
It is effective to use a so-called latent curing accelerator which rapidly promotes the curing reaction of the resin at a high temperature. As such a latent curing accelerator, the activation energy of the gelation reaction is measured when the resin composition containing the curing accelerator is subjected to a pressure molding process, that is, when the gelation time is measured in a temperature range of 150 to 200 ° C. Corresponds to a curing accelerator showing a high value. A curing accelerator exhibiting a value of 17 kcal / mol or more as the activation energy is desirable. Specific examples of such a curing accelerator include various phosphorus-based or nitrogen-containing compounds, their organic acid salts, and boron salts.

【００１６】ところで、本発明の樹脂組成物は充填剤を
多量に配合するため、成形品が固く脆くなる傾向があ
る。そのためシリコーン系化合物やポリブタジエン系ゴ
ム、熱可塑性エラストマーを用いてエポキシ樹脂や硬化
剤としてのフェノール系化合物又は両者の混合物を変性
又は改質することが望ましい。それによって、成形品の
靱性が改良され、成形品の耐熱衝撃性や機械的な衝撃強
度、接着力などを改善できる。これらの組成物には必要
に応じて樹脂成分と充填剤との濡れを良くするためのカ
ップリング剤、着色材、難燃化剤、離型剤等を配合する
ことができる。特に、カップリング剤としてはシラン
系、アルミキレート系、チタネート系等の種々の化合物
が用いられるが、これらのカップリング剤は予め充填剤
の表面に単分子層以上の厚みで被覆処理して用いること
が望ましい。本発明の樹脂組成物は上述のように二軸ロ
ールや押出し機を用いて製造することができ、半導体装
置の封止はトランスファープレスを用いて従来と全く同
様の方法で行なうことができる。By the way, since the resin composition of the present invention contains a large amount of a filler, a molded article tends to be hard and brittle. Therefore, it is desirable to use a silicone compound, a polybutadiene rubber, or a thermoplastic elastomer to modify or modify the epoxy resin, the phenol compound as a curing agent, or a mixture of both. Thereby, the toughness of the molded product is improved, and the thermal shock resistance, mechanical impact strength, adhesive strength, and the like of the molded product can be improved. If necessary, a coupling agent, a coloring agent, a flame retardant, a release agent, and the like for improving the wetting between the resin component and the filler can be added to these compositions. In particular, various compounds such as silane-based, aluminum chelate-based, and titanate-based compounds are used as the coupling agent, and these coupling agents are used by coating the surface of the filler in advance with a thickness of at least a monomolecular layer. It is desirable. The resin composition of the present invention can be produced using a twin-screw roll or an extruder as described above, and the semiconductor device can be sealed using a transfer press in exactly the same manner as in the past.

【００１７】このようにして得られる本発明の樹脂封止
型半導体装置は、封止材料とシリコンチップの熱膨張係
数が非常に接近しているため、パッケージ内部に発生す
る熱応力は大幅に低減され、それによってパッケージの
反り、ねじれ等の変形が著しく低減され、温度サイクル
試験時の耐クラック性、耐湿性等の信頼性も改善され
る。また、封止材料は熱応力低減によってシリコンチッ
プやリードフレームに対して高い接着力を示し、しか
も、流動性が良好なためにパッケージ内の狭い隙間にも
材料が良く充填すること並びに従来材料に比べて樹脂分
が極端に少ないことによって吸湿率が小さくなり、近年
表面実装型パッケージに厳しく要求されている耐はんだ
リフロー性も極めて良好である。In the resin-encapsulated semiconductor device of the present invention thus obtained, the thermal stress generated inside the package is greatly reduced because the thermal expansion coefficients of the sealing material and the silicon chip are very close to each other. As a result, deformation such as warpage and torsion of the package is significantly reduced, and reliability such as crack resistance and moisture resistance during a temperature cycle test is also improved. In addition, the sealing material shows high adhesive strength to silicon chips and lead frames by reducing thermal stress, and because of its good fluidity, it can be used to fill the narrow gaps in the package well with conventional materials. As compared with the case where the resin content is extremely small, the moisture absorption rate is reduced, and the solder reflow resistance strictly required in recent years for the surface mount type package is extremely good.

【００１８】次に、本発明の適用に当って最も効果が大
きい超薄型パッケージ構造を有する半導体装置並びに従
来の半導体装置を図面を用いて説明する。図１は半導体
素子１の電極２上に形成されたバンプ３を介してリード
４を電気的に接触し、半導体素子１の回路形成面のみを
封止材料５で樹脂封止した半導体装置である。９はリー
ド固定枠でポリイミド製である。図２は半導体素子１と
リード４を両面接着剤７で固着し、素子上の電極２とリ
ード４を金ワイヤ６を用いて電気的に接続した後、上記
同様に半導体素子１の回路形成面のみを封止材料５で樹
脂封止した半導体装置である。図３は封止樹脂層をさら
に薄くすることを目的として、素子の表面外周を削り取
り、その一段と低い箇所に電極２を形成し、そこにバン
プ３を介してリード４を接続し、半導体素子１の回路形
成面のみを封止材料５で樹脂封止した半導体装置であ
る。こうすることによって封止樹脂層は一段と薄くする
ことができるが、図１の半導体装置に比べてパッケージ
サイズは若干大きくなる。Next, a description will be given of a semiconductor device having an ultra-thin package structure and a conventional semiconductor device which are most effective in applying the present invention, with reference to the drawings. FIG. 1 shows a semiconductor device in which leads 4 are electrically contacted via bumps 3 formed on electrodes 2 of a semiconductor element 1, and only a circuit forming surface of the semiconductor element 1 is resin-sealed with a sealing material 5. . 9 is a lead fixing frame made of polyimide. FIG. 2 shows a state in which the semiconductor element 1 and the lead 4 are fixed with a double-sided adhesive 7 and the electrode 2 and the lead 4 on the element are electrically connected to each other using a gold wire 6. This is a semiconductor device in which only the sealing material 5 is used for resin sealing. FIG. 3 shows the purpose of further reducing the thickness of the sealing resin layer by shaving the outer periphery of the element, forming an electrode 2 at a lower portion thereof, connecting a lead 4 to the electrode 2 via a bump 3, and forming a semiconductor element 1. This is a semiconductor device in which only the circuit forming surface is resin-sealed with a sealing material 5. By doing so, the sealing resin layer can be made much thinner, but the package size is slightly larger than that of the semiconductor device of FIG.

【００１９】図４は、リードフレームのダイパッド部８
に半導体素子１を銀ペースト１０で固着し、素子上の電
極２とリード４を金ワイヤ６で電気的に接続した後、封
止材料５で素子の上下面を樹脂封止した従来からよく知
られたＴＳＯＰ（ Thin Small Outline Plastic Packag
e ) の例である。封止材料として従来の熱膨張係数が大
きな材料を用いた場合、パッケージ内部に発生する熱応
力によってパッケージにねじれや反りが生じやすいとい
う問題があった。これを防止するには素子の上下面の樹
脂層の厚さをバランスさせることが重要であり、金型構
造、成形条件、封止材料の流動硬化特性等に厳しい制約
があった。図５は半導体素子１をフィルム状の両面接着
剤７を介してリード４に固着した後、素子上の電極２と
リード４を金ワイヤ６で電気的に接続し、封止材料５で
封止したＴＳＯＰの例である。このパッケージは図４に
示したＴＳＯＰのように、チップの周辺にリードが配置
されていないため、パッケージはチップサイズぎりぎり
まで小さくできるのが特徴である。図６は半導体素子
（１と１′）を固着したリード同士（４と４′）を接合
して半導体素子を二段重ねにし、これを封止材料５で樹
脂封止した外観上はＳＯＪ（Small Outline Plastic Pa
ckage ) の例である。このパッケージは厚みが若干厚く
なるが大きなチップを投影面積が小さなパッケージに封
止できるのが特徴である。FIG. 4 shows a die pad portion 8 of a lead frame.
The semiconductor element 1 is fixed to the substrate with a silver paste 10, the electrodes 2 on the element are electrically connected to the leads 4 by gold wires 6, and then the upper and lower surfaces of the element are sealed with a sealing material 5 by resin. TSOP (Thin Small Outline Plastic Packag
e) is an example. When a conventional material having a large thermal expansion coefficient is used as a sealing material, there is a problem that the package is likely to be twisted or warped due to thermal stress generated inside the package. In order to prevent this, it is important to balance the thickness of the resin layer on the upper and lower surfaces of the element, and there are severe restrictions on the mold structure, molding conditions, flow hardening characteristics of the sealing material, and the like. FIG. 5 shows that after the semiconductor element 1 is fixed to the lead 4 via the film-like double-sided adhesive 7, the electrode 2 on the element and the lead 4 are electrically connected with the gold wire 6 and sealed with the sealing material 5. This is an example of the TSOP that has been performed. Unlike the TSOP shown in FIG. 4, this package does not have leads arranged around the chip, and thus is characterized in that the package can be made as small as possible. FIG. 6 shows a semiconductor device (1 and 1 ') to which leads (4 and 4') are fixedly joined to form a two-stage semiconductor device, which is sealed with a sealing material 5 in resin. Small Outline Plastic Pa
ckage). This package is characterized in that it can seal a large chip into a package with a small projection area, though the thickness is slightly thicker.

【００２０】[0020]

【実施例】以下、本発明の実施例によってより具体的に
説明する。 実施例１及び２ エポキシ樹脂としてｏ−クレゾールノボラック型エポキ
シ樹脂とビスフェノールＡ型エポキシ樹脂の重量比１／
１の混合物１００重量部を、硬化剤としてフェノールノ
ボラック樹脂５５重量部（エポキシ当量／フェノール性
水酸基当量比１／１）を用い、（これら樹脂成分の１５
０℃における粘度は１．２ポイズである）、硬化促進剤
としてテトラフェニルホスホニウム・テトラフェニルボ
レート２重量部（上記樹脂系における１５０から２００
℃でのゲル化反応の活性化エネルギーは１８．３ｋｃａ
ｌ／ｍｏｌである）、可撓化剤として末端にアミノ基を
有する分子量約３万のポリジメチルシロキサン１０重量
部、充填剤として全体の９９重量％が０．１から１００
μｍの範囲にあって、しかも平均粒径がそれぞれ１５μ
ｍで粒度分布をＲＲＳ粒度線図にプロットした場合の直
線の傾きｎ値が、それぞれ０．７５（実施例１）及び
１．０（実施例２）の２種類の球状溶融シリカ１７７０
重量部（８５ｖｏｌ％）、カップリング剤としてエポキ
シシラン系を１０重量部、離形剤としてモンタン酸エス
テルを２重量部、着色剤としてカーボンブラックを２重
量部計量し、これらを二軸ロールを用いて８０℃で１５
分間混練し目的とする２種類の加圧成形用樹脂組成物を
作製した。The present invention will be described more specifically with reference to the following examples. Examples 1 and 2 The weight ratio of o-cresol novolak type epoxy resin to bisphenol A type epoxy resin was 1 /
100 parts by weight of the mixture of Example 1 and 55 parts by weight of a phenol novolak resin (epoxy equivalent / phenolic hydroxyl group equivalent ratio 1/1) as a curing agent.
The viscosity at 0 ° C. is 1.2 poise), and 2 parts by weight of tetraphenylphosphonium / tetraphenylborate (150 to 200 in the above resin system) as a curing accelerator
The activation energy of the gelation reaction at 1 ° C. is 18.3 kca
1 / mol), 10 parts by weight of polydimethylsiloxane having a molecular weight of about 30,000 and having a terminal amino group as a flexibilizer, and 99% by weight of the filler as 0.1 to 100%.
μm range and the average particle size is 15μ each.
When the particle size distribution is plotted on the RRS particle size diagram with m, two types of spherical fused silica 1770 having slopes n values of 0.75 (Example 1) and 1.0 (Example 2), respectively.
Weight part (85 vol%), 10 parts by weight of an epoxy silane type as a coupling agent, 2 parts by weight of a montanic acid ester as a release agent, and 2 parts by weight of carbon black as a coloring agent, and these are measured using a biaxial roll. 15 at 80 ° C
After kneading for 2 minutes, two types of target resin compositions for pressure molding were prepared.

【００２１】各硬化物の成形性、成形品の主な物性並び
に図１に示す半導体装置を封止し、各種信頼性を評価し
た結果を表１にまとめて示す。なお、表中の各種成形品
はトランスファープレスを用い、成形温度１８０℃、成
形圧力７０ｋｇ／ｃｍ2 、成形時間１．５分で成形し、
金型から取りだしたあと１８０℃で５時間の後硬化を行
なった。また、評価に用いた半導体装置はチップサイズ
が８ｍｍ×１５ｍｍ×０．２５ｍｍｔ、パッケージサイ
ズが９ｍｍ×１７ｍｍ×０．５ｍｍｔである。この実施
例１によって得られた組成物は低粘度、高流動性を有
し、硬化物は低熱膨張性であり、この材料を用いて素子
を封止した半導体装置はパッケージの反りが小さく、温
度サイクル性、耐湿性、耐はんだリフロー性が良好であ
る。実施例２は実施例１よりも粒度分布（ｎ値）が若干
大きな充填剤を用いた場合の例である。実施例１に比べ
て溶融粘度がやや大きく、流動性が若干低下している
が、素子を封止することが可能であった。この場合パッ
ケージの反りがやや大きいが、温度サイクル性、耐湿
性、耐はんだリフロー性が良好である。Table 1 summarizes the moldability of each cured product, the main physical properties of the molded product, and the results obtained by sealing the semiconductor device shown in FIG. 1 and evaluating various reliability. The various molded products in the table were molded using a transfer press at a molding temperature of 180 ° C., a molding pressure of 70 kg / cm 2 , and a molding time of 1.5 minutes.
After removal from the mold, post-curing was performed at 180 ° C. for 5 hours. The semiconductor device used for evaluation has a chip size of 8 mm × 15 mm × 0.25 mmt and a package size of 9 mm × 17 mm × 0.5 mmt. The composition obtained in Example 1 has low viscosity and high fluidity, the cured product has low thermal expansion, and a semiconductor device in which an element is sealed using this material has a small package warpage and a low temperature. Good cycleability, moisture resistance and solder reflow resistance. Example 2 is an example in which a filler having a slightly larger particle size distribution (n value) than that of Example 1 is used. Although the melt viscosity was slightly higher and the fluidity was slightly lower than that of Example 1, the element could be sealed. In this case, although the package is slightly warped, the temperature cycle property, the moisture resistance, and the solder reflow resistance are good.

【００２２】比較例１ 比較例において、粒度分布（ｎ値）が本発明の範囲外に
ある１．２５の充填剤を用いてそれ以外は実施例１と同
様に実施した。その結果を表１に記載する。この比較例
では、充填剤の粒度分布が狭いために、これによって得
られた組成物は粘度が高く、流動性が悪いため、半導体
素子を封止する際リードフレームが変形したり、未充填
個所が生じ評価用サンプルを得られなかった。Comparative Example 1 Comparative Example 1 was carried out in the same manner as in Example 1 except that a filler having a particle size distribution (n value) outside the range of the present invention was 1.25. Table 1 shows the results. In this comparative example, because the particle size distribution of the filler was narrow, the resulting composition had high viscosity and poor fluidity, so that the lead frame was deformed when sealing the semiconductor element, And a sample for evaluation could not be obtained.

【００２３】比較例２ エポキシ樹脂としてｏ−クレゾールノボラック型エポキ
シ樹脂とビスフェノールＡ型エポキシ樹脂の重量比１／
１の混合物１００重量部を、硬化剤としてフェノールノ
ボラック樹脂５５重量部（エポキシ当量／フェノール性
水酸基当量比１／１）を用い、（これら樹脂成分の１５
０℃における粘度は１．２ポイズである）、硬化促進剤
としてＤＢＵ（１，８−ジアザビシクロ（５．４．０）
−ウンデセン−７）０．３重量部（上記樹脂系における
１５０から２００℃でのゲル化反応の活性化エネルギー
は１５．８ｋｃａｌ／ｍｏｌである）、可撓化剤として
末端にアミノ基を有する分子量約３万のポリジメチルシ
ロキサン１０重量部、充填剤として全体の９９重量％が
０．１から１００μｍの範囲にあって、しかも平均粒径
がそれぞれ１５μｍで粒度分布をＲＲＳ粒度線図にプロ
ットした場合の直線の傾きが、０．７５の球状溶融シリ
カ１７７０重量部（８５ｖｏｌ％）、カップリング剤と
してエポキシシラン系を１０重量部、離形剤としてモン
タン酸エステルを２重量部、着色剤としてカーボンブラ
ックを２重量部計量し、これらを二軸ロールを用いて８
０℃で１５分間混練し目的とする加圧成形用樹脂組成物
を作製した。Comparative Example 2 The weight ratio of o-cresol novolak type epoxy resin to bisphenol A type epoxy resin was 1 /
100 parts by weight of the mixture of Example 1 and 55 parts by weight of a phenol novolak resin (epoxy equivalent / phenolic hydroxyl group equivalent ratio 1/1) as a curing agent.
The viscosity at 0 ° C. is 1.2 poise), and DBU (1,8-diazabicyclo (5.4.0)) is used as a curing accelerator.
-Undecene-7) 0.3 part by weight (the activation energy of the gelation reaction at 150 to 200 ° C. in the above resin system is 15.8 kcal / mol), molecular weight having an amino group at a terminal as a flexibilizer When about 30,000 10 parts by weight of polydimethylsiloxane, 99% by weight of the filler as a filler is in the range of 0.1 to 100 μm, and the average particle size is 15 μm each, and the particle size distribution is plotted on an RRS particle size diagram. 1770 parts by weight (85 vol%) of a spherical fused silica having a linear gradient of 0.75, 10 parts by weight of an epoxysilane as a coupling agent, 2 parts by weight of a montanic acid ester as a release agent, and carbon black as a colorant Are weighed in 2 parts by weight, and these are weighed to 8
The mixture was kneaded at 0 ° C. for 15 minutes to prepare a desired resin composition for pressure molding.

【００２４】各硬化物の成形性、成形品の主な物性並び
に図１に示す半導体装置を封止し各種信頼性を評価した
結果を表１にまとめて示す。なお、表中の各種成形品は
トランスファープレスを用い、成形温度１８０℃、成形
圧力７０ｋｇ／ｃｍ2 、成形時間１．５分で成形し、金
型から取りだしたあと１８０℃で５時間の後硬化を行な
った。また、評価に用いた半導体装置はチップサイズが
８ｍｍ×１５ｍｍ×０．２５ｍｍｔ、パッケージサイズ
が９ｍｍ×１６ｍｍ×０．５ｍｍｔである。この比較例
は粒度分布（ｎ値）が本発明の範囲内にある０．７５の
充填剤とゲゲル化反応の活性化エネルギーが本発明の範
囲よりも小さな１５．８ｋｃａｌ／ｍｏｌの硬化促進剤
を組み合わせた場合の例である。この場合はゲル化反応
の活性化エネルギーが小さいために、得られた組成物は
粘度が極めて高く、高流動性が著しく劣るため、半導体
素子を封止する際リードフレームが変形したり、未充填
個所が生じ評価用サンプルが得られなかった。Table 1 summarizes the moldability of each cured product, the main physical properties of the molded product, and the results of evaluating various reliability by sealing the semiconductor device shown in FIG. The various molded products in the table were molded using a transfer press at a molding temperature of 180 ° C., a molding pressure of 70 kg / cm 2 , and a molding time of 1.5 minutes. After being removed from the mold, post-curing was performed at 180 ° C. for 5 hours. Was performed. The semiconductor device used for evaluation has a chip size of 8 mm × 15 mm × 0.25 mmt and a package size of 9 mm × 16 mm × 0.5 mmt. In this comparative example, a filler having a particle size distribution (n value) of 0.75 having a particle size distribution (n value) within the range of the present invention and a curing accelerator of 15.8 kcal / mol having an activation energy of a Gegel reaction smaller than that of the present invention were used. This is an example of a combination. In this case, since the activation energy of the gelation reaction is small, the obtained composition has an extremely high viscosity and extremely low fluidity, so that the lead frame is deformed or unfilled when sealing the semiconductor element. Samples for evaluation were not obtained.

【００２５】[0025]

【表１】 [Table 1]

【００２６】表１より、充填剤の粒度分布並びに硬化促
進剤の選定によって成形性が良好でしかも低熱膨張性の
樹脂組成物が得られることが分かる。また、このような
材料で封止した半導体装置は耐温度サイクル性、耐湿
性、耐はんだリフロー性等の各種信頼性が良好なことが
分かる。Table 1 shows that a resin composition having good moldability and low thermal expansion can be obtained by selecting the particle size distribution of the filler and the selection of the curing accelerator. Further, it can be seen that the semiconductor device sealed with such a material has good reliability such as temperature cycle resistance, moisture resistance, and solder reflow resistance.

【００２７】実施例３〜５ エポキシ樹脂としてビフェニル骨格を有する２官能性の
エポキシ樹脂１００重量部を、硬化剤としてフェノール
ノボラック樹脂５６重量部（エポキシ当量／フェノール
性水酸基当量比１／１）を用い、（これら樹脂成分の１
５０℃における粘度は０．８ポイズである）、硬化促進
剤としてテトラフェニルホスホニウム・テトラフェニル
ボレート３重量部、充填剤として全体の９９重量％が
０．１から１００μｍの範囲にあって、しかも平均粒径
がそれぞれ１５μｍで粒度分布をＲＲＳ粒度線図にプロ
ットした場合の直線の傾きが、それぞれ０．７５の球状
溶融シリカ１１９０重量部（８０ｖｏｌ％、実施例
３）、１６９０重量部（８５ｖｏｌ％、実施例４）及び
２６３５重量部（９０ｖｏｌ％、実施例５）、カップリ
ング剤としてエポキシシラン系を１０重量部、離形剤と
してモンタン酸エステルを２重量部、着色剤としてカー
ボンブラックを２重量部計量し、これらを二軸ロールを
用いて８０℃で１５分間混練し目的とする３種類の加圧
成形用樹脂組成物を作製した。Examples 3 to 5 100 parts by weight of a bifunctional epoxy resin having a biphenyl skeleton as an epoxy resin and 56 parts by weight of a phenol novolak resin (epoxy equivalent / phenolic hydroxyl group equivalent ratio 1/1) as a curing agent were used. , (1 of these resin components
The viscosity at 50 ° C. is 0.8 poise), 3 parts by weight of tetraphenylphosphonium / tetraphenylborate as a curing accelerator, and 99% by weight of a filler in the range of 0.1 to 100 μm, and the average When the particle diameter is 15 μm and the particle size distribution is plotted on an RRS particle size diagram, the slope of a straight line is 1190 parts by weight of spherical fused silica of 0.75 (80 vol%, Example 3) and 1690 parts by weight (85 vol%, respectively). Example 4) and 2635 parts by weight (90 vol%, Example 5), 10 parts by weight of an epoxysilane as a coupling agent, 2 parts by weight of a montanic acid ester as a release agent, and 2 parts by weight of carbon black as a coloring agent These are weighed and kneaded at 80 ° C. for 15 minutes using a biaxial roll to produce three kinds of target resin compositions for pressure molding. Was.

【００２８】各硬化物の成形性、成形品の主な物性並び
に図２に示す半導体装置を封止し各種信頼性を評価した
結果を表２にまとめて示す。なお、表中の各種成形品は
トランスファープレスを用い、成形温度１８０℃、成形
圧力７０ｋｇ／ｃｍ2 、成形時間１．５分で成形し、金
型から取りだしたあと１８０℃で５時間の後硬化を行な
った。また、評価に用いた半導体装置はチップサイズが
８ｍｍ×１５ｍｍ×０．２５ｍｍｔ、パッケージサイズ
が９ｍｍ×１６ｍｍ×０．５ｍｍｔである。実施例３−
５はエポキシ樹脂としてビフェニル型のエポキシ樹脂を
用い（上記実施例１及び２ではｏ−クレゾールノボラッ
ク型エポキシ樹脂とビスフェノールＡ型エポキシ樹脂を
併用）、充填剤として粒度分布（ｎ値）が本発明の範囲
内にある０．７５のものを用い、硬化促進剤としてゲル
化反応の活性エネルギーが本発明の範囲内に入る（１
８．３ｋｃａｌ／ｍｏｌ）ＴＰＰ−ＴＰＢを用いた場合
の例である。これによって、充填剤が９０ｖｏｌ％配合
しても得られた組成物は低粘度、高流動性を有し、その
硬化物は低熱膨張性であり、この材料を用いて素子を封
止した半導体装置はパッケージの反りが小さく、温度サ
イクル性、耐湿性、耐はんだリフロー性が良好である。Table 2 summarizes the moldability of each cured product, the main physical properties of the molded product, and the results of evaluating various reliability by sealing the semiconductor device shown in FIG. The various molded products in the table were molded using a transfer press at a molding temperature of 180 ° C., a molding pressure of 70 kg / cm 2 , and a molding time of 1.5 minutes. After being removed from the mold, post-curing was performed at 180 ° C. for 5 hours. Was performed. The semiconductor device used for evaluation has a chip size of 8 mm × 15 mm × 0.25 mmt and a package size of 9 mm × 16 mm × 0.5 mmt. Example 3
No. 5 used a biphenyl type epoxy resin as the epoxy resin (in the above Examples 1 and 2, an o-cresol novolak type epoxy resin and a bisphenol A type epoxy resin were used in combination), and the particle size distribution (n value) of the present invention was as a filler. The active energy of the gelation reaction falls within the range of the present invention (1.
(8.3 kcal / mol) This is an example in the case of using TPP-TPB. As a result, even if the filler is blended at 90 vol%, the obtained composition has low viscosity and high fluidity, and the cured product has low thermal expansion. Has a small package warpage and good temperature cycleability, moisture resistance and solder reflow resistance.

【００２９】実施例６〜８ エポキシ樹脂としてナフタレン骨格を有する２官能性の
エポキシ樹脂１００重量部を、硬化剤としてフェノール
ノボラック樹脂７２重量部（エポキシ当量／フェノール
性水酸基当量比１／１）を用い、（これら樹脂成分の１
５０℃における粘度は０．４ポイズである）、硬化促進
剤として上記ＤＢＵのテトラフェニルボロン塩１重量部
（上記樹脂系における１５０から２００℃でのゲル化反
応の活性化エネルギーは１７．５ｋｃａｌ／ｍｏｌであ
る）、充填剤として表面を予めエポキシシラン系カップ
リング剤で処理し、かつ、全体の９９重量％が０．１か
ら１００μｍの範囲にあってしかも平均粒径がそれぞれ
１５μｍで粒度分布をＲＲＳ粒度線図にプロットした場
合の直線の傾きが、それぞれ０．７５の球状溶融シリカ
１２９５重量部（８０ｖｏｌ％、実施例６）、１６７０
重量部（８５ｖｏｌ％、実施例７）及び２６３５重量部
（９０ｖｏｌ％、実施例８）、離形剤としてモンタン酸
エステルを２重量部、着色剤としてカーボンブラックを
２重量部計量し、これらを二軸ロールを用いて８０℃で
１５分間混練し目的とする３種類の加圧成形用樹脂組成
物を作製した。Examples 6 to 8 100 parts by weight of a bifunctional epoxy resin having a naphthalene skeleton as an epoxy resin and 72 parts by weight of a phenol novolak resin (epoxy equivalent / phenolic hydroxyl group equivalent ratio 1/1) as a curing agent were used. , (1 of these resin components
The viscosity at 50 ° C. is 0.4 poise), and 1 part by weight of a tetraphenylboron salt of DBU as a curing accelerator (the activation energy of the gelation reaction at 150 to 200 ° C. in the above resin system is 17.5 kcal / mol), and the surface is previously treated with an epoxysilane coupling agent as a filler, and 99% by weight of the whole is in the range of 0.1 to 100 μm, and the average particle size is 15 μm each and the particle size distribution is When the slope of the straight line plotted on the RRS particle size diagram was 1,295 parts by weight of spherical fused silica (80 vol%, Example 6) of 0.75, 1670
Parts by weight (85 vol%, Example 7) and 2635 parts by weight (90 vol%, Example 8), 2 parts by weight of a montanic acid ester as a release agent, and 2 parts by weight of carbon black as a colorant, were weighed. The mixture was kneaded at 80 ° C. for 15 minutes using an axial roll to prepare three types of target resin compositions for pressure molding.

【００３０】各硬化物の成形性、成形品の主な物性並び
に図５に示す半導体装置を封止し各種信頼性を評価した
結果を表２にまとめて示す。なお、表中の各種成形品は
トランスファープレスを用い、成形温度１８０℃、成形
圧力７０ｋｇ／ｃｍ2 、成形時間１．５分で成形し、金
型から取りだしたあと１８０℃で５時間の後硬化を行な
った。また、評価に用いた半導体装置はチップサイズが
８ｍｍ×１５ｍｍ×０．２５ｍｍｔ、パッケージサイズ
が９ｍｍ×１６ｍｍ×０．７５ｍｍｔである。実施例６
−８はエポキシ樹脂としてナフタレン環型のエポキシ樹
脂を用い、充填剤としては上記実施例３〜５と同じ粒度
分布（ｎ値）が本発明の範囲内にある０．７５のものを
用い、硬化促進剤としてゲル化反応の活性エネルギーが
本発明の範囲内に入る（１７．５ｋｃａｌ／ｍｏｌ）Ｄ
ＢＵ−ＴＰＢを用いた場合の例である。この場合も、充
填剤を９０ｖｏｌ％配合しても得られた組成物は低粘
度、高流動性を有し、その硬化物は低熱膨張性であり、
この材料を用いて素子を封止した半導体装置はパッケー
ジの反りが小さく、温度サイクル性、耐湿性、耐はんだ
リフロー性が良好である。Table 2 summarizes the moldability of each cured product, the main physical properties of the molded product, and the results of evaluating various reliability by sealing the semiconductor device shown in FIG. The various molded products in the table were molded using a transfer press at a molding temperature of 180 ° C., a molding pressure of 70 kg / cm 2 , and a molding time of 1.5 minutes. After being removed from the mold, post-curing was performed at 180 ° C. for 5 hours. Was performed. The semiconductor device used for evaluation has a chip size of 8 mm × 15 mm × 0.25 mmt and a package size of 9 mm × 16 mm × 0.75 mmt. Example 6
-8 uses a naphthalene ring type epoxy resin as an epoxy resin, and uses a filler having a particle size distribution (n value) of 0.75 which is within the scope of the present invention as in Examples 3 to 5 as a filler. The active energy of the gelation reaction as a promoter falls within the range of the present invention (17.5 kcal / mol) D
This is an example when BU-TPB is used. Also in this case, the composition obtained even if the filler is blended at 90 vol% has low viscosity and high fluidity, and the cured product has low thermal expansion,
A semiconductor device in which an element is sealed using this material has a small package warpage, and has good temperature cycle properties, moisture resistance, and solder reflow resistance.

【００３１】[0031]

【表２】 [Table 2]

【００３２】表２より、充填剤の粒度分布並びに硬化促
進剤の選定によって成形性が良好でしかも低熱膨張性の
樹脂組成物が得られることが分かる。また、このような
材料で封止した半導体装置は耐温度サイクル性、耐湿
性、耐はんだリフロー性等の各種信頼性が良好なことが
分かる。Table 2 shows that a resin composition having good moldability and low thermal expansion can be obtained by selecting the particle size distribution of the filler and the selection of the curing accelerator. Further, it can be seen that the semiconductor device sealed with such a material has good reliability such as temperature cycle resistance, moisture resistance, and solder reflow resistance.

【００３３】比較例３ エポキシ樹脂としてビフェニル骨格を有する２官能性の
エポキシ樹脂１００重量部に、硬化剤としてフェノール
ノボラック樹脂５６重量部（エポキシ当量／フェノール
性水酸基当量比１／１）、硬化促進剤としてテトラフェ
ニルホスホニウム・テトラフェニルボレート３重量部、
充填剤として全体の９９重量％が０．１から１００μｍ
の範囲にあって、しかも平均粒径がそれぞれ１５μｍで
粒度分布をＲＲＳ粒度線図にプロットした場合の直線の
傾きがそれぞれ０．７５の角状（破砕品）溶融シリカ１
２９５重量部（８０ｖｏｌ％）、カップリング剤として
エポキシシラン系を１０重量部、離形剤としてモンタン
酸エステルを２重量部、着色剤としてカーボンブラック
を２重量部計量し、これらを二軸ロールを用いて８０℃
で混練を試みた。しかし、これらの樹脂組成物はパテ状
になってロールに巻き付かず、ロールから直に落下して
しまい目的とする加圧成形用樹脂組成物を得ることがで
きなかった。また、試しにロールから落下した樹脂組成
物を上記実施例と同様の条件でトランスファプレスを用
いて成形してみたが全く流動せず、目的とする試験片を
成形することができなかった。この比較例は充填剤とし
て角形の溶融シリカを使用した場合には配合量を８０ｖ
ｏｌ％に減らしても材料の混練ができなくなってしま
い、本発明の目的が達成できないことを示したものであ
る。この理由は、角形充填剤を使用した場合には粒度分
布を本発明の範囲に調整しても形状効果によって充填剤
自体の充填分率が球形充填剤を用いた場合のように高ま
らない（換言するとかさばりが大きい）ためでありま
す。COMPARATIVE EXAMPLE 3 100 parts by weight of a bifunctional epoxy resin having a biphenyl skeleton as an epoxy resin, 56 parts by weight of a phenol novolak resin as a curing agent (epoxy equivalent / phenolic hydroxyl group equivalent ratio 1/1), a curing accelerator 3 parts by weight of tetraphenylphosphonium / tetraphenylborate,
99% by weight of filler as 0.1 to 100 μm
And the average particle size is 15 μm, and the gradient of the straight line when the particle size distribution is plotted on the RRS particle size diagram is 0.75.
295 parts by weight (80 vol%), 10 parts by weight of an epoxy silane type as a coupling agent, 2 parts by weight of a montanic acid ester as a release agent, and 2 parts by weight of carbon black as a coloring agent, and these were weighed on a biaxial roll. 80 ° C using
Tried kneading. However, these resin compositions were putty-shaped, did not wind around the rolls, and dropped directly from the rolls, failing to obtain the desired resin composition for pressure molding. In addition, the resin composition dropped from the roll in a trial was molded using a transfer press under the same conditions as in the above example, but it did not flow at all, and the target test piece could not be molded. In this comparative example, when a rectangular fused silica was used as a filler, the blending amount was 80 v
This indicates that even if the content is reduced to ol%, kneading of the materials becomes impossible, and the object of the present invention cannot be achieved. The reason is that even when the particle size distribution is adjusted to the range of the present invention when the square filler is used, the filling fraction of the filler itself does not increase due to the shape effect as in the case where the spherical filler is used (in other words, the spherical filler is used). Then the bulk is large).

【００３４】比較例４ エポキシ樹脂としてナフタレン骨格を有する２官能性の
エポキシ樹脂１００重量部に、硬化剤としてフェノール
ノボラック樹脂７２重量部（エポキシ当量／フェノール
性水酸基当量比１／１）、硬化促進剤としてゲル化反応
の活性エネルギーが本発明の範囲よりも小さな（１５．
５ｋｃａｌ／ｍｏｌ）１，８−ジアザビシクロ（５．
４．０）−７ウンデセンを０．８重量部、充填剤として
全体の９９重量％が０．１から１００μｍの範囲にあっ
て、しかもその平均粒径が１５μｍで粒度分布をＲＲＳ
粒度線図にプロットした場合の直線の傾きが０．７５の
球状溶融シリカ１２９５重量部（８０ｖｏｌ％）、離形
剤としてモンタン酸エステルを２重量部、着色剤として
カーボンブラックを２重量部計量し、これらを二軸ロー
ルを用いて８０℃で混練を試みた。しかし、これらの樹
脂組成物は上記比較例３と同様パテ状になってロールに
巻き付かず、ロールからすぐに落下してしまい目的とす
る加圧成形用樹脂組成物を得ることができなかった。ま
た、試しにロールから落下した樹脂組成物をトランスフ
ァープレスを用いて成形してみたが全く流動せず、目的
とする試験片を成形することができなかった。これは本
発明のように充填剤を多量に配合する樹脂組成物におい
て摩擦による発熱が大きくなり、樹脂のゲル化反応の活
性化エネルギーが小さい系では樹脂の硬化反応が進行し
易くなるためである。COMPARATIVE EXAMPLE 4 100 parts by weight of a bifunctional epoxy resin having a naphthalene skeleton as an epoxy resin, 72 parts by weight of a phenol novolak resin (epoxy equivalent / phenolic hydroxyl group equivalent ratio 1/1) as a curing agent, and a curing accelerator The active energy of the gelation reaction is smaller than the range of the present invention (15.
5 kcal / mol) 1,8-diazabicyclo (5.
4.0) -7 undecene (0.8 parts by weight), 99% by weight of the filler as a filler is in the range of 0.1 to 100 μm, the average particle size is 15 μm, and the particle size distribution is RRS.
1295 parts by weight (80 vol%) of spherical fused silica having a slope of 0.75 when plotted on a particle size diagram, 2 parts by weight of montanic acid ester as a release agent, and 2 parts by weight of carbon black as a colorant were weighed. These were kneaded at 80 ° C. using a biaxial roll. However, these resin compositions were putty-shaped and did not wind around the roll as in Comparative Example 3, and immediately dropped from the roll, so that the desired resin composition for pressure molding could not be obtained. . In addition, the resin composition dropped from the roll was molded using a transfer press, but it did not flow at all, and the target test piece could not be molded. This is because, in a resin composition containing a large amount of a filler as in the present invention, heat generation due to friction increases, and in a system in which the activation energy of the gelling reaction of the resin is small, the curing reaction of the resin easily proceeds. .

【００３５】[0035]

【発明の効果】本発明の樹脂組成物は成形性が良好で、
しかも、熱膨張係数が無機物並に小さい。そのため、半
導体装置のようなデリケートな構造を有するインサート
を破損あるいは変形させることなく封止することがで
き、しかも、得られた成形品は耐温度サイクル性、耐湿
性、耐はんだリフロー性等の各種信頼性が良好であり、
工業的利用価値が極めて大きいことが分かる。The resin composition of the present invention has good moldability,
In addition, the coefficient of thermal expansion is as small as that of an inorganic substance. Therefore, the insert having a delicate structure such as a semiconductor device can be sealed without being damaged or deformed, and the obtained molded product has various properties such as temperature cycle resistance, moisture resistance, solder reflow resistance, and the like. Good reliability,
It can be seen that the industrial use value is extremely large.

【図面の簡単な説明】[Brief description of the drawings]

【図１】樹脂封止型半導体装置の一例を示す断面図であ
る。FIG. 1 is a cross-sectional view illustrating an example of a resin-sealed semiconductor device.

【図２】樹脂封止型半導体装置の一例を示す断面図であ
る。FIG. 2 is a cross-sectional view illustrating an example of a resin-sealed semiconductor device.

【図３】樹脂封止型半導体装置の一例を示す断面図であ
る。FIG. 3 is a cross-sectional view illustrating an example of a resin-sealed semiconductor device.

【図４】樹脂封止型半導体装置の一例を示す断面図であ
る。FIG. 4 is a cross-sectional view illustrating an example of a resin-sealed semiconductor device.

【図５】樹脂封止型半導体装置の一例を示す断面図であ
る。FIG. 5 is a cross-sectional view illustrating an example of a resin-sealed semiconductor device.

【図６】樹脂封止型半導体装置の一例を示す断面図であ
る。FIG. 6 is a cross-sectional view illustrating an example of a resin-sealed semiconductor device.

【符号の説明】[Explanation of symbols]

１…半導体素子、２…電極、３…バンプ、４…リード、
５…封止材、６…金ワイヤ、７…両面接着剤、８…タイ
パッド、９…リード固定枠、１０…銀ペーストDESCRIPTION OF SYMBOLS 1 ... Semiconductor element, 2 ... Electrode, 3 ... Bump, 4 ... Lead,
5: sealing material, 6: gold wire, 7: double-sided adhesive, 8: tie pad, 9: lead fixing frame, 10: silver paste

フロントページの続き (72)発明者 宝蔵寺 裕之 茨城県日立市久慈町4026番地 株式会社 日立製作所 日立研究所内 (72)発明者 石井 利昭 茨城県日立市久慈町4026番地 株式会社 日立製作所 日立研究所内 (72)発明者 西 邦彦 東京都千代田区神田駿河台四丁目６番地 株式会社日立製作所内 (72)発明者 岩谷 昭彦 東京都千代田区神田駿河台四丁目６番地 株式会社日立製作所内 (72)発明者 井村 健一 東京都千代田区神田駿河台四丁目６番地 株式会社日立製作所内 (56)参考文献 特開 平２−209949（ＪＰ，Ａ) 特開 平２−224360（ＪＰ，Ａ)Continued on the front page (72) Inventor Hiroyuki Horazoji 4026 Kuji-cho, Hitachi City, Ibaraki Prefecture Inside Hitachi, Ltd.Hitachi Laboratory (72) Inventor Toshiaki Ishii 4026 Kuji-machi, Hitachi City, Ibaraki Prefecture Hitachi, Ltd. Inventor Kunihiko Nishi 4-6 Kanda Surugadai, Chiyoda-ku, Tokyo, Japan Inside Hitachi, Ltd. (72) Inventor Akihiko Iwatani 4-6-6 Kanda Surugadai, Chiyoda-ku, Tokyo Inside Hitachi, Ltd. (72) Inventor Kenichi Imura Tokyo 4-6-6 Kanda Surugadai, Chiyoda-ku, Tokyo Inside Hitachi, Ltd. (56) References JP-A-2-209949 (JP, A) JP-A-2-224360 (JP, A)

Claims (9)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 半導体素子の電極とリードが電気的に接
続され、少なくとも素子の回路形成面を、（ａ）エポキ
シ樹脂、（ｂ）硬化剤、（ｃ）硬化促進剤及び（ｄ）無
機質充填剤を必須成分とする樹脂組成物で封止した樹脂
封止型半導体装置において、上記樹脂組成物を構成する
（ａ）エポキシ樹脂及び（ｂ）硬化剤からなる樹脂成分
は１５０℃における粘度が３ポイズ以下であり、（ｄ）
の無機質充填剤はその９５％以上が粒径０．１から１０
０μｍの範囲にあり、平均粒径が２から２０μｍの実質
的に球状の溶融シリカ粉末であり、かつ、当該溶融シリ
カ粉末は組成物全体に対して８０から９２．５ｖｏｌ％
の範囲で配合され、しかも、上記樹脂組成物は加圧成形
過程における最低溶融粘度が３０００ポイズ以下、加圧
成形後は熱膨張係数が１．０×１０−５／℃以下の樹脂
組成物であることを特徴とする樹脂封止型半導体装置。An electrode and a lead of a semiconductor element are electrically connected, and at least a circuit forming surface of the element is filled with (a) an epoxy resin, (b) a curing agent, (c) a curing accelerator, and (d) an inorganic filler. In a resin-sealed semiconductor device sealed with a resin composition containing an agent as an essential component, the resin component comprising (a) an epoxy resin and (b) a curing agent constituting the resin composition has a viscosity at 150 ° C. of 3 Less than poise, (d)
95% or more of the inorganic filler has a particle size of 0.1 to 10%.
In the range of 0 .mu.m, a fused silica powder of substantially spherical 20μm average particle size of from 2, and the molten silicon
Mosquito powder is 80 to 92.5 vol% based on the whole composition
In addition, the above resin composition is a resin composition having a minimum melt viscosity of 3000 poise or less in the pressure molding process and a thermal expansion coefficient of 1.0 × 10 −5 / ° C. or less after pressure molding. A resin-encapsulated semiconductor device. 【請求項２】 上記（ａ）エポキシ樹脂は、ビスフェノ
ールＡ骨格、ビフェニール骨格あるいはナフタレン骨格
を有する２官能型のエポキシ樹脂から選ばれる成分を含
むことを特徴とする請求項１記載の樹脂封止型半導体装
置。2. The resin-sealed mold according to claim 1, wherein the epoxy resin (a) contains a component selected from a bifunctional epoxy resin having a bisphenol A skeleton, a biphenyl skeleton or a naphthalene skeleton. Semiconductor device. 【請求項３】 上記（ｂ）硬化剤は、分子内にフェノー
ル性水酸基を２個以上含むフェノール系化合物であるこ
とを特徴とする請求項１又は２記載の樹脂封止型半導体
装置。3. The resin-encapsulated semiconductor device according to claim 1, wherein the curing agent (b) is a phenolic compound containing two or more phenolic hydroxyl groups in a molecule. 【請求項４】 上記（ｃ）硬化促進剤は、（ａ）エポキ
シ樹脂及び（ｂ）硬化剤からなる樹脂成分に０．１から
５ｗｔ％の範囲で配合され、加圧成形温度の１５０から
２００℃で硬化反応を促進させた場合に、硬化反応の活
性化エネルギーが１７ｋｃａｌ／ｍｏｌ以上の値を示す
リン系又は含窒素系の化合物であることを特徴とする請
求項１、２又は３記載の樹脂封止型半導体装置。4. The curing accelerator (c) is mixed with a resin component (a) of an epoxy resin and a curing agent (b) in a range of 0.1 to 5% by weight, and has a pressing temperature of 150 to 200%. The compound according to claim 1, 2 or 3, wherein the compound is a phosphorus-based or nitrogen-containing compound having an activation energy of the curing reaction of 17 kcal / mol or more when the curing reaction is accelerated at ℃. Resin-sealed semiconductor device. 【請求項５】 上記（ｄ）球状の溶融シリカ粉末は、そ
の粒度分布をＲＲＳ粒度線図にプロットした場合に最大
粒径及び最小粒径部分を除いた少なくとも残りの７０重
量％以上の溶融シリカ粉末が存在する粒径部分が実質的
に直線性を示し、かつ、その勾配が０．６から１．０の
範囲にあることを特徴とする請求項１〜４のいずれか１
項記載の樹脂封止型半導体装置。5. The above (d) spherical fused silica powder , when its particle size distribution is plotted on an RRS particle size diagram, at least the remaining 70% by weight or more of fused silica excluding the maximum particle size and the minimum particle size portions. 5. The method according to claim 1, wherein the particle size portion in which the powder is present exhibits substantially linearity, and the gradient is in the range of 0.6 to 1.0.
Item 10. The resin-sealed semiconductor device according to item 8. 【請求項６】 上記（ｄ）球状の溶融シリカ粉末は、あ
らかじめその表面がシラン、アルミキレート又はチタネ
ート系のカップリング剤の単分子層以上の厚みで被覆処
理されていることを特徴とする請求項１〜５のいずれか
１項記載の樹脂封止型半導体装置。6. The (d) spherical fused silica powder , the surface of which is previously coated with a silane, aluminum chelate or titanate-based coupling agent having a thickness of at least a monomolecular layer. Item 6. The resin-sealed semiconductor device according to any one of Items 1 to 5 . 【請求項７】 上記（ａ）エポキシ樹脂及び（ｂ）硬化
剤からなる樹脂成分は、その０．１から２０ｗｔ％をシ
リコーン系化合物、ポリブタジエン系ゴム、熱可塑性エ
ラストマーあるいは熱可塑性樹脂で変性又は改質される
ことを特徴とする請求項１〜６のいずれか１項記載の樹
脂封止型半導体装置。7. The resin component comprising (a) an epoxy resin and (b) a curing agent, wherein 0.1 to 20 wt% thereof is modified or modified with a silicone compound, a polybutadiene rubber, a thermoplastic elastomer or a thermoplastic resin. The resin-encapsulated semiconductor device according to any one of claims 1 to 6 , wherein 【請求項８】 樹脂組成物での封止は、半導体素子の回
路形成面のみとし素子の裏面側を露出させ、全体の厚さ
を０．５ｍｍ以下にしたことを特徴とする請求項１〜７
のいずれか１項記載の樹脂封止型半導体装置。8. The semiconductor device according to claim 1, wherein the sealing with the resin composition is performed only on the circuit forming surface of the semiconductor element, exposing the back side of the element, and reducing the overall thickness to 0.5 mm or less. 7
The resin-encapsulated semiconductor device according to any one of the preceding claims. 【請求項９】 半導体素子の電極とリード間の電気的接
続は、電極又はリード上に形成したバンプを介して行な
うことを特徴とする請求項１〜８のいずれか１項記載の
樹脂封止型半導体装置。Electrical connection between 9. semiconductor element electrode and lead, resin sealing according to any one of claims 1-8, characterized in that to perform through a bump formed on the electrode or the lead Type semiconductor device.
JP4092375A 1992-03-19 1992-03-19 Resin-sealed semiconductor device Expired - Lifetime JP2660631B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4092375A JP2660631B2 (en) 1992-03-19 1992-03-19 Resin-sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4092375A JP2660631B2 (en) 1992-03-19 1992-03-19 Resin-sealed semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP9031439A Division JP2827115B2 (en) 1997-01-31 1997-01-31 Resin-sealed semiconductor device

Publications (2)

Publication Number Publication Date
JPH05267371A JPH05267371A (en) 1993-10-15
JP2660631B2 true JP2660631B2 (en) 1997-10-08

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ID=14052682

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Country Link
JP (1) JP2660631B2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6143423A (en) * 1997-04-07 2000-11-07 Shin-Etsu Chemical Co., Ltd. Flame retardant epoxy resin compositions
JP2002201288A (en) * 2001-01-09 2002-07-19 Nitto Denko Corp Process for preparing semiconductor-sealing epoxy resin composition
JP4386453B2 (en) 2006-05-31 2009-12-16 信越化学工業株式会社 Resin-sealed semiconductor device
JP6320239B2 (en) * 2013-09-24 2018-05-09 日東電工株式会社 Semiconductor chip sealing thermosetting resin sheet and semiconductor package manufacturing method
CN110572909A (en) * 2019-09-12 2019-12-13 山东晶导微电子股份有限公司 LED lighting circuit and chip packaging structure thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02209949A (en) * 1989-02-09 1990-08-21 Shin Etsu Chem Co Ltd Epoxy resin composition and cured material for sealing of semiconductor
JPH02224360A (en) * 1989-02-27 1990-09-06 Nitto Denko Corp Semiconductor device

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