JP2642154B2 - Electrostatic bonding jig - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an electrostatic bonding jig, in particular, for improving mechanical strength of a semiconductor material having an electric circuit formed on a main surface and facilitating handling. The present invention relates to an improvement in a voltage applying mechanism in an electrostatic bonding jig for electrostatically bonding an insulator material to the semiconductor material.

[Prior Art] An insulator material such as crystallized glass or glass which acts as a solid electrolyte at a high temperature close to the coefficient of thermal expansion is superimposed on a semiconductor material, and the temperature is raised to about 400 ° C. and heated, and the insulator material side is heated. An electrostatic bonding method of applying a voltage of about 1000 V between both materials as a negative and firmly bonding (Japanese Patent Publication No. 53-28747) is well known. In recent years, electrostatic bonding between wafers has been tried. I have.

FIG. 4 shows a setting diagram for electrostatically bonding a semiconductor wafer and an insulator wafer according to the conventional method.

In the figure, a glass wafer 2 is placed as an insulating material on a semiconductor wafer 1 on which an electric circuit (not shown) is formed on a main surface 1a. Overlaid at 2b.

A bonding jig 3 is further placed on the voltage application surface 2 a of the glass wafer 2, and the bonding jig 3 applies a negative voltage applied from the power supply 4 to the entire voltage application surface 2 a of the glass wafer 2. Glass wafer voltage application surface 2a for even application
It has a larger joint surface 3a.

After being set as described above, the main surface of the semiconductor wafer 1 is heated in a state where the two materials are heated to about 400 ° C.
By applying a voltage between 1a and the joining jig 3, a strong joining action can be obtained.

[Problems to be Solved by the Invention] However, when such a conventional electrostatic bonding method is performed, as shown in FIG. 5 (A) showing a plan view of a bonded sample, a defective bonding area 100 frequently occurs. This causes a problem that the yield of finished semiconductor products is deteriorated.

FIG. 2B shows a side cross section of the bonded sample, and it is understood that the poorly bonded region 100 appears as a local protrusion of the semiconductor wafer 1 at the bonded interface and can be observed from the main surface 1a side.

According to the present inventors' investigation into the state of occurrence of such a bonding failure area 100, as long as the conventional mechanism shown in FIG. 4 is used, the heating temperature is increased from 200 ° C. to 450 ° C. and the voltage is increased to the dielectric breakdown area. If it is allowed to somehow, the poor connection area 10
It turns out that 0 occurs.

Usually, since a plurality of electric circuits are formed on a semiconductor wafer by thermal diffusion or vapor deposition technology, it is manufactured to apply a temperature exceeding 450 ° C. and a voltage reaching a dielectric breakdown region for a long time to perform bonding. It is not preferable from the viewpoint of deteriorating the characteristics and reliability of the semiconductor product and reducing the cost of the semiconductor product.

The process of forming the poor connection region 100 will be described with reference to FIG.

FIG. 3A shows a partial cross section of the bonding portion between the semiconductor wafer 1 and the glass wafer 2 before voltage application, and the bonding surfaces 1b and 2b of the materials 1 and 2 as a whole have at least three or more contact points C1. In contact.

Next, when a voltage is applied between the semiconductor wafer 1 and the bonding jig 3 by the power supply 4 from such a state, the bonding surfaces 1b and
The electrostatic force acts instantaneously over the entire area between 2b and (B) in the same figure.
The electrostatic bonding action proceeds from the contact point C1 as a starting point,
The joining action further develops from the new contact point C2 generated by this, and thus the electrostatic joining proceeds from the new contact point one after another.

However, since the distance between the contact points C1 and C2 is different between the semiconductor wafer 1 side and the glass wafer 2 side, when the electrostatic bonding operation is completed, as shown in FIG. A defective bonding area 100 is observed, which is observed as local projection distortion and, in some cases, as a crack in the semiconductor wafer 1. In addition, contact points C1 and C2 occur. Further, when the contact points C1 and C2 are present at the peripheral edges of the joint surfaces 1b and 2b, the poor joint area 100 is formed with an extremely large area at the center of the joint surface.

On the other hand, if there are small junction failure areas that cannot be detected by simple observation, these small non-areas are easily overlooked even in the inspection process, and the reliability of manufactured and marketed semiconductor products is significantly impaired. Would.

According to the investigation results of the present inventors, the occurrence of the defective bonding area 100 becomes remarkable in proportion to the increase in the diameter of the wafer to be bonded, and the judgment of the presence or absence of the defective bonding area is disclosed in Japanese Unexamined Patent Application, First Publication No. H10-157572.
It has been found that it is extremely difficult to detect a current flowing at the time of electrostatic bonding disclosed in JP-A-58-1489495 based on the quality of a monitor diagram.

Object of the invention The present invention has been made in view of the above conventional problems,
The objective is to minimize the occurrence of defective bonding areas in the case of electrostatic bonding between semiconductor materials and insulator materials, to improve the reliability of completed semiconductor products and to reduce costs. It is to provide a simple electrostatic bonding jig.

[Background Art] The occurrence of a defective bonding area is caused by placing a bonding jig 3 having an area larger than a voltage application surface 2a of a glass wafer as shown in FIG. Electrostatic force acts almost instantaneously over the entire area between the bonding surface 1a of the glass wafer 2 and the bonding surface 2a of the glass wafer 2, and as a result, the electrostatic bonding at the bonding surface of the two materials proceeds irregularly. Is due.

Although the semiconductor wafer 1 and the glass wafer 2 are in a state of being overlapped for the time being, the bonding surfaces 1b and 2b are merely placed on the glass wafer 2 on another semiconductor wafer 1.
Is not completely adhered to the entire surface. If an instantaneous voltage is applied over the entire area in such a state, the joining state inevitably varies.

Therefore, in the present invention, such a bonding failure is minimized if the most important and extremely narrow part from the bonding operation surface is set as the starting point of voltage application, and if the electrostatic bonding operation is gradually spread toward the end after being securely pressed, the bonding failure is minimized. It was found that it can be suppressed to the limit. That is, a configuration is adopted in which the electrostatic force upon application of the voltage is made to progress regularly from the center of the glass wafer 2 to the periphery. At least at the start of voltage application, an electrostatic force is applied only to the central portion, and gradually expands to the peripheral portion with the passage of time thereafter.

In order to confirm the effect of this invention, the present inventors first improved the bonding jig 3 shown in FIG. 4 and, at the start of voltage application, applied an electrostatic force only to the center of the bonding surface between the semiconductor wafer 1 and the glass wafer 2. Works, that is, the voltage application surface 2 of the glass wafer 2
b, using a small joining jig that touches only the center,
The fact that the electrostatic bonding actually proceeds from the center to the periphery was grasped by the following experiment.

FIG. 7 shows a setting diagram of the semiconductor wafer 1.
And the glass wafer 2 are electrostatically bonded at a temperature of 360 ° C. and a voltage of 800 V.

Here, the electrostatic bonding jig 5 for applying the voltage from the power supply 4 to the voltage application surface 2a of the glass wafer 2 based on the above-mentioned point of view, as shown in FIG. 5a is formed in a very thin columnar shape of about 4 mm ² , and the electrostatic bonding jig 5 is placed at the center of the voltage application surface 2a of the glass wafer 2. The electrostatic bonding jig 5 is made of stainless steel, and the semiconductor wafer 1 has a diameter of
N-conductivity type silicon having a thickness of 76.2 mm (3 inches) and a thickness of 450 μm is used.

From this state, when a voltage is applied to the voltage application surface 2a of the glass wafer 2 for about 5 minutes by the power supply 4 via the bonding jig 5, the bonding surfaces 1b and 2b of the semiconductor wafer 1 and the glass wafer 2 are joined. It was confirmed that very good electrostatic bonding was achieved without the occurrence of a defective bonding region in the central region corresponding to the contact position. Further, it has been found that by further extending the voltage application time, a desired junction can be formed without any problem up to a portion near the peripheral portion.

However, in this method, since the diameter of the joining jig 5 is extremely small, the electrostatic joining action tends to be weakened toward the peripheral edge of the jig just by placing the jig on the center thereof. In addition, it is impossible to continuously advance a good joining action to the joining surfaces 1b and 2b of the two members 1 and 2.

In addition, when the diameter of the semiconductor wafer and the glass wafer is larger, the time required for the electrostatic bonding action from the narrow bonding jig placed at the center to propagate to the peripheral edge and complete the bonding action. There is a problem that it is difficult to end electrostatic bonding to the peripheral portion quickly and long.

In consideration of the problem of the apparatus shown in FIG. 7, the time required for electrostatic bonding can be reduced somewhat by increasing the area of the contact surface 5a of the bonding jig 5, and the distance from the central part to the peripheral part can be reduced. It is possible to presume that the bonding operation can be performed well. However, the diameter of the circumscribed circle of the joining surface 5a is 30
If it exceeds about mm, on the contrary, a small defective bonding area is likely to be generated at the center of the bonding jig, which is not appropriate.

In view of the above experimental results, the inventors of the present invention complete the electrostatic bonding of the semiconductor wafer and the glass wafer from the center to the periphery in a short time without fail while reliably preventing the occurrence of a defective bonding area. With the problem described above in mind, as described below, the area of the portion in contact with the voltage application surface of the insulator wafer is expanded from the center to the periphery with the passage of time, and an operating mechanism is provided for that purpose. Invented two types of electrostatic bonding jigs.

Means for Solving the Problems In order to achieve the above object, the present invention provides a method of starting voltage application to a voltage application surface of an insulating wafer with a predetermined small diameter at a central portion thereof, and from the central portion with the passage of time. That is, it is enlarged toward the periphery.

An electrostatic bonding jig according to the invention of claim 1 of the present application applies an electric voltage to an insulator wafer placed on a semiconductor wafer and electrostatically bonds the two to each other. A central electrode disposed in close proximity to a central portion of a voltage application surface of the insulator wafer; at least one peripheral electrode formed in a ring shape so as to surround the central electrode; An electrode drive mechanism for switching the contact electrode on the voltage application surface of the insulator wafer from the central electrode to the peripheral electrode with the passage of time when applying voltage to the wafer. And

According to a second aspect of the present invention, there is provided an electrostatic bonding jig for applying a voltage to an insulator wafer mounted on a semiconductor wafer and electrostatically bonding the two. In the jig, a metallic diaphragm held above the insulator wafer with a gap that does not attract and contact the voltage application surface of the insulator wafer due to an electrostatic force generated when a voltage is applied; Pressure adjusting means for pressurizing the diaphragm so that the area in contact with the voltage application surface of the insulator wafer expands from the central part to the peripheral part over time with the passage of time. .

 Hereinafter, the specific detailed configuration will be described.

The electrostatic bonding jig according to the invention described in claim 1 of the present application is:
A central electrode placed at the center of the voltage application surface of the insulating wafer, and at least one peripheral electrode made of a conductive material formed in a ring shape surrounding the central electrode, and a lapse of time when voltage is applied In addition, an electrode driving mechanism for switching the contact electrode on the voltage application surface of the insulator wafer from the central electrode to the peripheral electrode is included.

Then, when applying a voltage, only the central electrode is first brought into contact with the voltage application surface of the insulator wafer as described above, and then with time, the outer peripheral electrode is brought into contact with the voltage application surface of the insulator wafer. Let me do it. At this time,
In order to prevent the occurrence of poor bonding areas, the operation direction of the electrode from the center to the periphery must be observed, but when the outer peripheral electrode is operated in contact, the electrode inside the outer peripheral electrode must always contact the insulator wafer. You don't have to.

Further, as a driving mechanism for switching and operating each of the electrodes, any of mechanical and electrical means can be used.

Next, the electrostatic bonding jig according to the invention of claim (2) is not a plurality of independently driven electrodes as in the first type, but the amount of bending thereof is increased by applying a voltage and the insulation is increased. A single diaphragm made of a flexible metal material is used so that the contact area of the body wafer to the voltage application surface expands from the center to the periphery.

The diaphragm is held through a predetermined gap that does not come into contact with the insulator wafer due to electrostatic attraction generated between the diaphragm and the insulator wafer when a voltage is applied.

Means for applying pressure to the diaphragm is also provided in the invention of this type, so that at the time of starting voltage application, the diaphragm comes into contact with the central portion of the voltage application surface of the insulating wafer with a predetermined small area so that the diaphragm comes into contact with the voltage application surface. Pressure is applied to the diaphragm, and the contact area between the diaphragm and the voltage application surface can be increased from the center toward the periphery with the passage of time.

[Operation] According to the present invention configured as described above, only the center electrode or the center portion of the diaphragm is in contact with the voltage application to the insulator wafer with a predetermined narrow circumscribed circle diameter when the voltage is applied. Absent. Therefore, the electrostatic force acting on the bonding surface is substantially concentrated at the central portion, and the region to be electrostatically bonded gradually advances from the central portion toward the peripheral portion. But,
Since the electric field does not act on the central part of the joining surface, the speed at which the electrostatic joining proceeds toward the peripheral part is limited.

According to the invention described in claim 1 of the present application, the peripheral electrode located outside the center electrode contacts the voltage application surface, and in the invention described in claim 2, the pressure applied to the diaphragm is increased. By increasing the area of the diaphragm in contact with the voltage application surface, the progress of the region where the electrostatic bonding is performed to the peripheral portion is increased again.

Further, as time passes, in the first type of the invention, the outer peripheral edge electrode is brought into contact with the voltage application surface, and in the second type of the invention, the pressure applied to the diaphragm is further increased to increase the voltage application. By further increasing the area of the diaphragm in contact with the surface, it is possible to complete a good electrostatic bonding region all the way to the periphery without causing a bonding non-region.

If it is determined that the electrostatic bonding has reached the peripheral portion, the voltage is increased within a range that does not adversely affect the characteristics of the manufactured semiconductor product so that a more reliable electrostatic bonding is obtained. Needless to say, it is good.

[Effects of the Invention] As described above, according to the present invention, the contact area of the insulator wafer that is electrostatically bonded to the semiconductor wafer with respect to the voltage application surface changes from the central portion to the peripheral portion as the voltage application start time elapses. To minimize the occurrence of bonding non-regions that are observed as bubbles or local protrusions or cracks at the bonding interface between the semiconductor wafer and the insulator wafer. Suppressed and extremely reliable semiconductor products can be obtained.

In addition, the time spent for electrostatic bonding between the semiconductor wafer and the insulator wafer can be significantly reduced because it is not merely waiting for the peripheral edge to be passively spread as in the conventional method. It does not affect the cost.

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.

FIG. 1 shows a setting state before the start of voltage application when electrostatically bonding a semiconductor wafer and a glass wafer as an insulating material using the electrostatic bonding jig according to the first type of the present invention. (A) is a front view, and (B) is a II-I section thereof.

In the figure, a silicon wafer 10 is formed on a positive electrode plate 30 made of a stainless material so as to make electrical connection with the electrode plate 30.
Is placed. The caliber is 76.2mm (3 inches) and the thickness is
The 450 μm N-conductivity type silicon wafer 10 includes a plurality of electric circuits (not shown) formed on the main surface 10a.

On the other hand, a Pyrex glass wafer 20 having a diameter of about 76.2 mm and a thickness of 1 mm has a bonding surface 20b on the silicon wafer 10
Is mounted so as to overlap with the bonding surface 10b.

What is characteristic in the present embodiment is that the voltage application to the material to be joined set as described above is performed by switching the plurality of electrodes arranged concentrically from the central part to the peripheral part of the voltage application surface. The configuration is such that the voltage application area is expanded as time elapses.

That is, a cylindrical central electrode 31 having a diameter of 10 mm, a first circular electrode 32 formed in a ring shape surrounding the central electrode, and the second circular electrode 32 are formed above the polymerized silicon wafer 10 and the Pyrex glass wafer 20. A three-stage concentric electrode portion composed of a second circular electrode 33 formed further outside the one circular electrode 32 is provided. Each of the three electrodes is made of stainless steel, and the first and peripheral electrodes are used to connect heat-resistant leads 31c to 33c for supplying a negative voltage from a power supply 50 to the three electrodes. Hole 32
s and 33s are formed.

A single shaft 80 having flanges 301-303 formed in engagement with the respective electrodes is formed at the center of the three concentric electrodes 31-33.
Is pierced.

A screw gear 88 is cut above the shaft 80, and the upper end thereof is elastically fixed to a support plate 200 via a coil spring 201.

A gear 89 operated by a lever 90 meshes with a side of the screw gear 88 of the shaft 80. When the lever 90 is operated in the direction of the arrow in the figure, the gear 89 rotates counterclockwise to move the shaft 80 downward, and the central electrodes 31 to 33 that engage with the respective flange portions 301 to 303 according to the operation amount are moved. Voltage application surface of Pyrex glass wafer 20
It will be in contact with 20a. When the lever 90 is operated in the reverse direction, the respective electrodes 31 to 33 are similarly moved upward according to the operation amount.

 Next, the operation will be described.

First, at the start of voltage application, the center electrode 31
Only the contact is made to contact the voltage application surface 20a of the Pyrex glass wafer 20, but this is achieved by moving the lever 90 in the direction indicated by the arrow in the figure by a predetermined amount, whereby the shaft 80 moves downward. The voltage application surface 20a is formed by the collar 301.
The central electrode 31 held in a non-contact state moves downward in the vertical direction, comes out of the holding by the flange portion 301, and is placed on the voltage applying surface 20a as shown in the figure.

As a result, a voltage of about 1000 V from the power supply 50 is applied to the central electrode 31.
Is supplied to the voltage application surface 20a of the Pyrex glass wafer from the silicon wafer 10 and the Pyrex glass wafer 20.
Means that electrostatic bonding is performed from the center and gradually proceeds toward the periphery. At this time, the first peripheral electrode 32 and the second peripheral electrode 33 are held by the flanges 302 and 303 of the shaft 80 so as not to contact the voltage applying surface 20a.

After about one minute has passed, the poor bonding area has become considerably larger than the surface 31a of the central electrode 31. From this state, the lever 90 is again operated in the same direction, and the shaft 80 is moved further downward, so that the first peripheral electrode 32 is applied to the voltage application surface.
By contacting 20a, the area where the electrostatic force acts is expanded, and the bonding area is further expanded. Also at this time, the second peripheral portion electrode
33 is held by the collar 303 and is in a non-contact state with the voltage application surface 20a.

After a lapse of about one minute, the bonding region has advanced to almost the vicinity of the peripheral edge without generating a defective bonding region. Then, the lever 90 is further operated to move the shaft 80 downward, and the surface 33a of the second circular electrode 33 is brought into contact with the voltage application surface 24, whereby the electrostatic bonding operation is completely performed around the bonding surface of both materials. Electrostatic bonding is completed without delay within about 3 minutes from the start of voltage application to the end portion.

In the present embodiment, a mechanical method using a gear as the electrode driving mechanism has been described, but it is needless to say that other mechanical methods or electrical methods can be used as long as the same operation is achieved. Absent.

In the illustrated example, a combination of the silicon wafer 10 having a diameter of 3 inches and the Pyrex glass wafer 20 is employed as the material to be joined. However, the size is not particularly limited, and the central electrode may be used in accordance with the size of the material. In addition, the shape and size of the peripheral electrode and the number of the peripheral electrodes can be appropriately changed.

FIG. 2 shows an electrostatic bonding step between the silicon wafer 10 and the Pyrex glass wafer 20 as in the first embodiment, using a second type electrostatic bonding jig according to the present invention. 2A shows a state before voltage application, FIG. 2B shows a state at the start of voltage application, and FIG. 2C shows a state at the end of voltage application. The temperature at the time of electrostatic bonding, the voltage applied from the power supply 50, the material and shape of the positive electrode plate, and the like are the same as in the first embodiment, and a description thereof will be omitted.

A characteristic of this embodiment is that a single diaphragm bellows is used as a voltage supply means to the voltage application surface 20a of the Pyrex glass wafer 20, instead of the plurality of concentric electrodes in the first embodiment. That is, in FIG. 1A, a diaphragm bellows 41 made of a stainless steel material having a thickness of 50 μm is provided above the polymerized semiconductor wafer 10 and the Pyrex glass wafer 20 with a distance 1 = 1 mm therebetween.
Is arranged, and the diaphragm bellows 41 have an outer diameter of 100 m.
m, which is welded and fixed to a flange 96 provided on a pipe 95 made of a stainless material having a thickness of about 2.5 mm.

In the state before the voltage application shown in FIG. 3A, the diaphragm bellows 41 is held at a distance 1 = 1 mm as described above without being in contact with the voltage application surface 20a, whereby a voltage of 1000 V is applied from the power supply 50. Even so, the diaphragm bellows 41 do not come into contact with the voltage application surface 20a of the Pyrex glass wafer 20 due to the action of the electrostatic force.

From this state, the state shifts to the voltage application start state shown in FIG. 9B, and a pressure adjusting valve (not shown) is connected to the diaphragm bellows 41 via the pipe 95 so as to be in contact with the voltage application surface 20a with a diameter d1 = 10 mm. A pressure P1 of 1 kg · f / cm ² is applied. As a result, the bonding region between the silicon wafer 10 and the Pyrex glass wafer 20 gradually moves from the central portion to the peripheral portion without causing a defective bonding region.

Then, the pressure applied to the diaphragm bellows 41 is increased, and about 2 minutes after the start of the voltage application, at the end of the voltage application in FIG. 4C, about 4 kg · f / cm ² is applied to the diaphragm blow 41 by the pressure regulating valve. The operation was performed so that the pressure P2 was applied, and the contact portion between the diaphragm bellows 41 and the voltage application surface 20a had a diameter d2 of about 70 mm. As a result, it was confirmed that perfect electrostatic bonding can be achieved up to the peripheral edge completely without generating a defective bonding area.

As described above, the electrostatic bonding jig of the present invention according to the above-described embodiments provides a highly reliable electrostatic bonding between a semiconductor wafer and an insulator wafer in a relatively short time without causing a bonding failure. Joining can be realized.

FIG. 3 shows a modified example of the electrostatic bonding jig according to the first type of the present invention. In the drawing, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted.

What is characteristic in this embodiment is that, instead of switching and driving operation of the electrodes with the passage of time as in the first embodiment, a plurality of electrodes arranged in a concentric circle are mounted on an insulator wafer in advance. In the configuration, the electrode to be applied with voltage is switched from the central portion to the peripheral portion by a switch operation over time without moving the electrode itself.

That is, in the figure, the center electrode 3 is similar to the first embodiment.
1 ', the voltage applying means in which the first and second peripheral electrodes 32' and 33 'are concentrically combined is provided.
These are already directly mounted on the Pyrex glass wafer 20 before the start of voltage application. Of course, the material is also stainless steel. These electrodes 31 'to 33' are electrically insulated from each other with a gap of about 2 mm.

From this state, at the start of voltage application, the switch S1 is turned on so that a negative voltage is applied only to the center electrode 31 ', and after a predetermined time elapses, the switches S2 and S3 are turned on in order, and from the center to the periphery. The electrostatic bonding is performed toward the part.

Therefore, in the first embodiment, the first type of electrostatic bonding jig of the present invention is described as including an operating mechanism for sequentially bringing the center electrode and the peripheral electrode into contact with the glass wafer. Before applying the voltage, the central electrode and all the peripheral electrodes are placed on the voltage application surface of the glass wafer before applying the voltage, and when applying the voltage, the electrostatic bonding action is expanded by simple switching by the electric method. Even if it is constituted so that it may be comprised, generation | occurrence | production of a non-bonding area | region can be suppressed reliably and an electrostatic bonding effect | action can be completed in a short time.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a front view and a plan view showing a first embodiment of electrostatic bonding performed by using an electrostatic bonding jig according to a first type of the present invention, and FIG. FIG. 3 is a process diagram showing a second embodiment of the electrostatic bonding performed by using the electrostatic bonding jig according to the second type, and FIG. 3 shows a modified example of the electrostatic bonding jig according to the first type of the present invention. FIG. 4, FIG. 4 is a setting diagram using a conventional electrostatic bonding jig, FIG. 5 is a plan view and a front view of a sample electrostatically bonded using the conventional electrostatic bonding jig, and FIG. FIG. 7 is an explanatory diagram showing a cause of generation of a defective bonding area, and FIG. 7 is a setting diagram of electrostatic bonding showing a point of view leading to the electrostatic bonding jig of the present invention. 10 Semiconductor wafer 10b Electrostatic bonding surface of semiconductor wafer 20 Glass wafer 20a Voltage applying surface of glass wafer 20b Electrostatic bonding surface of glass wafer 30 Positive electrode plate 31 Center Partial electrodes 32, 33… Peripheral part electrode 41… Metal diaphragm bellows 50… Power supply 80… Shaft 90… Lever 95… Pipe 100… Defective connection area 200… Support plate 201… Coil spring

Claims (2)

(57) [Claims] 1. An electrostatic bonding jig for applying a voltage to an insulator wafer mounted on a semiconductor wafer and electrostatically bonding the two to each other. A central electrode which is arranged in opposition and close proximity; at least one peripheral electrode formed in a ring shape so as to surround the central electrode; and, with the passage of time when voltage is applied to the insulator wafer. An electrode drive mechanism for switching the contact electrode to the voltage application surface of the insulator wafer from the central electrode to the peripheral electrode,
An electrostatic bonding jig comprising: 2. An electrostatic bonding jig for applying a voltage to an insulating wafer mounted on a semiconductor wafer and electrostatically bonding the two to each other. A metal diaphragm held above the insulator wafer with a gap that does not make suction contact with the voltage application surface of the insulator wafer, and a region where the diaphragm abuts the voltage application surface of the insulator wafer when voltage is applied. Pressure-adjusting means for pressing the diaphragm so as to expand from the central portion to the peripheral portion of the jig.