JP2625756B2 - Plasma processing apparatus - Google Patents

Plasma processing apparatus

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Publication number
JP2625756B2
JP2625756B2 JP22499087A JP22499087A JP2625756B2 JP 2625756 B2 JP2625756 B2 JP 2625756B2 JP 22499087 A JP22499087 A JP 22499087A JP 22499087 A JP22499087 A JP 22499087A JP 2625756 B2 JP2625756 B2 JP 2625756B2
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dielectric window
processing apparatus
plasma processing
waveguide
ring
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JP22499087A
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JPS6467908A (en )
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了 中山
卓 井上
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住友金属工業株式会社
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Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は電子サイクロトロン共鳴を利用し、例えば高集積半導体装置の製造等に使用されるプラズマプロセス装置に関する。 DETAILED DESCRIPTION OF THE INVENTION The present invention [relates] utilizes electron cyclotron resonance, a plasma processing apparatus, for example used to manufacture such a highly integrated semiconductor device.

〔従来技術〕 第3図はプラズマプロセス装置をCVD装置として構成した場合の概略縦断面図であり、反応室32内にはウエハ [Prior art] FIG. 3 is a schematic longitudinal sectional view of a case where the plasma processing apparatus as CVD apparatus, a wafer in the reaction chamber 32
38を保持した試料載置台37がウエハ38を反応室32上壁外部に接地したプラズマ生成室31開口部に対抗させて設置してある。 38 specimen table 37 which holds the can are installed in the wafer 38 is against the plasma generating chamber 31 opening grounded to the reaction chamber 32 the upper wall outside. プラズマ生成室31及び反応室32は予め真空ポンプ等を用い真空状態に保持されている。 The plasma generating chamber 31 and reaction chamber 32 is maintained in a vacuum state using a pre-vacuum pump or the like. プラズマ生成室31上部には導波管33が接続され、該導波管33はこれの他端を図示しないマグネトロンに接続し、該マグネトロンにて発せられたマイクロ波を導波管33の開口部に設けた誘電体窓38を介してプラズマ生成室31内に導く。 The plasma generating chamber 31 upper waveguide 33 is connected, the waveguide 33 is connected to a magnetron (not shown) which the other end opening of the waveguide 33 to a microwave emitted by the magnetron through the dielectric window 38 provided in the lead to the plasma generation chamber 31. 該プラズマ生成室31を囲繞するように配置された励磁コイル Arranged excitation coil so as to surround the plasma generation chamber 31
35に直流電流を通流し、また所要の原料ガスをプラズマ生成室31上部に配置されたガス導入管32より前記プラズマ生成室31内へ供給すると、プラズマ生成室31内においてプラズマが生成され、前記反応室32側へ磁束密度が低くなる発散磁界を形成し、前記プラズマのイオン等を投射する。 Flows through the direct current 35 and the than the required gas inlet pipe 32 to the raw material gas is arranged in the plasma generating chamber 31 upper supplied to the plasma generating chamber 31, plasma is generated in the plasma generating chamber 31, the the magnetic flux density into the reaction chamber 32 side is formed a divergent magnetic field to be low, projecting the ions of the plasma. これにより試料載置台36上のウエハ38表面に対する成膜等が行われる。 This film or the like to the wafer 38 surface on the specimen table 36 is carried out by.

第4図は前記導波管33とプラズマ生成室31との接続部周辺の拡大縦断面図であり、プラズマ生成室31の上壁には導波管33の内径よりも大径の開口部31bが設けられており、該開口部31b上にこれの孔径より少し大径の前記誘電体窓36が同心的にプラズマ生成室31の真空状態を封止するOリング40を介して設置してある。 Figure 4 is an enlarged longitudinal sectional view of the periphery of the connecting portion between the waveguide 33 and the plasma generation chamber 31, the upper wall of the plasma generation chamber 31 having a diameter larger than the inner diameter of the waveguide 33 openings 31b there installed via the O-ring 40 for sealing is provided, said little larger diameter than that of the hole diameter on the opening 31b dielectric window 36 is a vacuum of concentrically plasma generating chamber 31 . 前記開口部31 The opening 31
bの周縁部分、即ちOリング40の下側に位置する部分には冷却水路41が内設されており、該冷却水路41内へ水等の冷却液を通流させることにより、プラズマ生成時に発生する熱によるOリング40の劣化を防止している。 b peripheral portion, i.e. the portion located below the O-ring 40 being internally provided cooling water channel 41, by flow through a coolant such as water to the cooling water channel 41, generated during the plasma generation heat and preventing deterioration of the O-ring 40 due to.

プラズマ生成室31上壁面の前記誘電体窓36の周囲は誘電体窓36を囲繞するように微少間隙を隔てて誘電体窓36 Around the dielectric window 36 of the plasma generating chamber 31 above wall surface at a minute gap so as to surround the dielectric window 36 dielectric window 36
の上面よりも少し高く短筒状に突出させてあり、この突出部31a上にこれの外径と同一の外径を有するフランジ3 Yes to protrude upper surface slightly higher short cylindrical than the flange 3 having the same outer diameter as the outer diameter of which on the projecting portion 31a
3aが取付けられ、該フランジ33aは導波管33の開口端部に同心的に接続されている。 3a is attached, the flange 33a is coaxially connected to the open end of the waveguide 33.

〔発明が解決しようとする問題点〕 [Problems to be Solved by the Invention]

ところで上述の如く構成されたプラズマプロセス装置において、誘電体窓36を載置し、プラズマ生成室31内の真空状態を封止するOリング40は、これの下側部分は冷却水路41によって冷却されるが、誘電体窓36と接触している上側部分は、誘電体窓36がプラズマ発生に伴う熱により温度上昇するため、下側部分の冷却だけでは対処できず、次第に劣化し、真空破壊を生じるという問題がある。 Meanwhile the plasma processing apparatus configured as described above, by placing the dielectric window 36, O-ring 40 for sealing the vacuum state of the plasma generation chamber 31, the lower portion of which is cooled by the cooling water channel 41 that is, the upper portion in contact with the dielectric window 36, since the dielectric window 36 is a temperature rise due to the heat caused by the plasma generated, the only cooling of the lower portion can not be addressed, gradually deteriorates, the vacuum break there is a problem that arises. 更にこのOリングの劣化は、1kw以下の低いマイクロ波パワー領域では進行しないが、数倍のマイクロ波パワーを投入すると急速に進行し、Oリングは数分で使用不可能となる。 Further degradation of the O-ring does not proceed in the following low microwave power region 1 kw, it progresses rapidly when turned several times the microwave power, the O-ring becomes unusable in a few minutes.

本発明は斯かる事情に鑑みてなされたものであり、誘電体窓を冷却させることによりOリングに伝達される熱量を低下させ、Oリングの劣化を確実に防止し、高マイクロ波パワーにおける連続運転を可能とするプラズマプロセス装置の提供を目的とする。 The present invention has been made in view of such circumstances, to reduce the amount of heat transferred to the O-ring by cooling the dielectric window, and reliably prevent the degradation of the O-ring, continuous at high microwave power and an object thereof is to provide a plasma processing apparatus capable of operation.

〔問題点を解決するための手段〕 [Means for Solving the Problems]

本発明に係るプラズマプロセス装置は、誘電体窓によって封止された開口部の外部にマイクロ波導波管の一方の端部を対向配置したプラズマ生成室を有するプラズマプロセス装置において、前記誘電体窓と前記端部を熱伝達可能に結合させている前記マイクロ波導波管と、前記誘電体窓と前記端部との間、又は前記マイクロ波導波管外周部の前記端部近傍に設けられる冷却液通流路とを具備することを特徴とする。 Plasma processing apparatus according to the present invention is a plasma processing apparatus having a plasma generation chamber which is disposed opposite one end portion of the outside microwave waveguide openings sealed by the dielectric window, the dielectric window and said microwave waveguide that said end is coupled to a heat-transferable, during said dielectric window and said end portion, or coolant passage provided near said end of said microwave waveguide outer peripheral portion characterized by comprising a flow passage.

〔作用〕 [Action]

誘電体窓と熱伝達可能に結合されているマイクロ波導波管の端部と誘電体窓との間、又はマイクロ波導波管外周部の前記端部近傍に冷却液通流路が設けられ、該通流路に冷却液を通流させると、マイクロ波導波管を通じてこれと密着された誘電体窓が冷却される。 Between the end portion and the dielectric window of the microwave waveguide that is dielectric window and heat transfer coupled, or coolant flow path is provided near the end of the microwave waveguide outer periphery, said when the flow through the coolant flowing path, which the contact dielectric window through microwave waveguide is cooled.

〔実施例〕 〔Example〕

以下、本発明をその実施例を示す図面に基づき具体的に説明する。 It will be specifically described below based on the present invention with reference to the drawings showing its embodiments. 第1図は本発明に係るプラズマプロセス装置(以下、本発明装置という)の導波管とプラズマ生成室との接続部周辺を示す縦断面図である。 Figure 1 is a plasma processing apparatus according to the present invention (hereinafter, referred to as the present invention device) is a longitudinal sectional view showing a connecting part and periphery thereof between the waveguide and the plasma generation chamber.

プラズマ生成室31の上壁には導波管33の内径よりも大径の開口部31bが設けられており、該開口部31b上にこれの孔径より少し大径の誘電体窓36が同心的にプラズマ生成室31の真空状態を封止するOリング40を介して載置してある。 Than the inner diameter of the upper on the wall waveguide 33 of the plasma generating chamber 31 is provided with an opening 31b having a large diameter, the dielectric window 36 slightly larger diameter than that of the hole diameter on the opening 31b is concentrically It is placed through the O-ring 40 for sealing the vacuum state of the plasma generation chamber 31 to the. 前記開口部31bの周縁部分、即ちOリング40の下側に位置する部分には冷却水路41が内設してある。 Peripheral portion of the opening 31b, that is, a portion located below the O-ring 40 cooling water channel 41 are then internally provided.

プラズマ生成室31上壁面の前記誘電体窓36の周囲は誘電体36を囲繞するように微小間隙を隔てて短筒状に誘電体窓36の上面よりも高く突出させてあり、この突出部31 Around the dielectric window 36 of the plasma generating chamber 31 the upper wall surface is Yes to protrude higher than the upper surface of the dielectric window 36 at a small gap in the short tube shape so as to surround the dielectric 36, the projecting portion 31
aにはこれの外径と同一の外径を有し、その下面中心部に突出部31aの内径と同径の突出部1aを形成したフランジ1が前記突出部1aを嵌入させている。 To a have the same outer diameter as the outer diameter of this flange 1 formed with projecting portions 1a of the inner diameter and the same diameter of the protruding portion 31a is allowed to fit the projecting portion 1a at its lower surface center. 該フランジ1の内径は導波管33の内径と同径であり、フランジ1の上面に導波管33の開口端部が同心的に接続されている。 The inner diameter of the flange 1 is the same diameter as the inner diameter of the waveguide 33, the open end of the waveguide 33 is concentrically connected to the top surface of the flange 1. フランジ1はこれの突出部1aの先端面寄りの位置に前記冷却水路41よりも幅広の前記冷却液通流路たる冷却水路1bを円状に内設してあり、突出部1aのドーナツ板状の先端面と誘電体窓36の上面の周縁部分との間に突出部1aの先端面と同形同大の例えばシリコーンゴムを用いてなるシート3が相互に密着されて挟持されている。 Flange 1 Yes and internally provided wide of the cooling fluid flow path serving the cooling channel 1b in a circle than the cooling water passage 41 to the position of the distal end surface side of the this protrusions 1a, donut-shaped protrusion 1a sheet 3 made of, for example, using silicone rubber of the front end surface having the same shape and size of the projecting portion 1a is sandwiched in close contact with each other between the upper peripheral portion of the distal end surface and the dielectric window 36.

このようなシート3を介在させると相対する面の平坦度に依存することなく接触の度合が高められ、熱伝導性も高められ、また誘電体窓の破損も防止出来る。 The degree of contact is enhanced without depending such a sheet 3 in flatness of the surface facing the is interposed, thermal conductivity is enhanced, and also possible to prevent breakage of the dielectric window.

上述の如く構成された本発明装置においては、運転中に冷却水路1b及び41に図示しないタンクより冷却水が供給され、通流されることにより、冷却水路1bの下側に位置する誘電体窓36の周縁部がシート3を介して冷却される。 In the present invention device configured as described above, the cooling water from the tank (not shown) during operation in the cooling water channel 1b and 41 are supplied, by flowing through the dielectric window positioned on the lower side of the cooling water passage 1b 36 periphery of it is cooled through the sheet 3. これにより誘電体窓36に接触しているOリング40の上側部分の温度は上昇せず、またOリング40の下側部分は冷却水路41によって冷却さえるので、Oリング40は高温にならず劣化することがない。 Thus without increasing the temperature of the upper portion of the O-ring 40 in contact with the dielectric window 36, and since the lower portion of the O-ring 40 is more alert cooled by the cooling water channel 41, O-ring 40 is degraded not to be heated It is not to be.

第2図は本発明装置の他の実施例を示す要部縦断面図であり、誘電体窓36は第1図に示したものと同様にOリング40上に設置され、該Oリング40の下側に位置する部分に同じく冷却水路41が内設されている。 Figure 2 is a fragmentary vertical cross-sectional view showing another embodiment of the present invention apparatus, the dielectric window 36 is placed on the O-ring 40 similar to that shown in Figure 1, of the O-ring 40 also cooling water channel 41 in the portion located on the lower side is disposed therein. さて、誘電体窓36を囲繞するように短筒状に突設された突出部31aはこれの突出高を誘電体窓36の上面と同じ高さに設定してあり、突出部31a及び誘電体窓36上に突出部31aの外径と同一の外径を有するフランジ33aが密着固定されており、該フランジ33aは導波管33の開口端部に形成されている。 Now, the projecting portions 31a projecting from the short tubular so as to surround the dielectric window 36 is configured to the this the protruding height at the same height as the upper surface of the dielectric window 36, the protrusions 31a and the dielectric flange 33a having an outer diameter the same outer diameter as the projecting portion 31a on the window 36 are closely fixed, the flange 33a is formed at the open end of the waveguide 33.

導波管33の前記フランジ33a寄りの外周面には前記冷却液通流路たる冷却水管22が巻装してある。 The outer peripheral surface of the flange 33a near the waveguide 33 the cooling fluid flow path serving the cooling pipe 22 are wound.

上述の如く構成された本発明装置においては、前記冷却水管22に水等を通流させることにより導波管33を通じてフランジ33aが冷却され、該フランジ33aと密着されている誘電体窓36の周縁部が冷却されるので誘電体窓36と接触しているOリング40の上側部分の温度は上昇しない。 In the present invention device configured as described above, the flange 33a through the waveguide 33 by causing flow through the water or the like into the cooling water pipe 22 is cooled, the periphery of the dielectric window 36 that is in close contact with the flange 33a since parts are cooling temperature of the upper portion of the O-ring 40 in contact with the dielectric window 36 is not increased. そして下側部分は従来と同様に冷却水路41によって冷却されるのでOリング40は高温にならず劣化することがない。 The O-ring 40 because the lower part is cooled by the conventional manner to the cooling water channel 41 is never degraded not to be heated.

これにより、従来プラズマプロセス装置の連続運転はOリングの劣化により、マイクロ波パワーが1kw以下に限定されていたが、本発明により2.5kwにおいても可能となることが確認出来た。 Thus, the continuous operation deterioration of the O-ring in the conventional plasma processing apparatus, but the microwave power was limited to less than 1 kw, was confirmed also possible in 2.5kw by the present invention.

なお、本実施例においては、第1図に示したものにシートを使用しているが、これをシートを介在させずに直接フランジと誘電体窓とを密着させても良く、また第2 In the present embodiment uses a sheet to that shown in FIG. 1, which may be brought into close contact directly with flange and dielectric window without interposing the sheet, and the second
図に示したものにシートを使用する構成としても良い。 It may be configured to use a sheet to that shown in FIG.

更に、上述の実施例は本発明をCVD装置に適用した構成につき説明したが、何らこれに限るものではなく、例えばエッチング装置、スパッタリング装置として適用し得ることは言うまでもない。 Furthermore, although the above embodiment has been explained structure in which the present invention is applied to a CVD apparatus, not in any way limited to this, for example, an etching apparatus, it is needless to say that may be applied as a sputtering apparatus.

〔効果〕 〔effect〕

以上の如く本発明においては、誘電体窓と熱伝達可能に結合させているマイクロ波導波管の端部と誘電体窓との間、又はマイクロ波導波管外周部の端部近傍に設けられた冷却液通流路によって誘電体窓を冷却させることによって、これと接触しているOリング等、熱に弱い材料で形成された部分の温度上昇を抑制出来るため、これら部材の熱による劣化を確実に防止でき、それだけマイクロ波パワーを高く設定出来る等本発明は優れた効果を奏する。 More as in the present invention, provided between the end portion and the dielectric window of the microwave waveguide that is dielectric window and heat transfer coupled, or near the end of the microwave waveguide outer peripheral portion by cooling the dielectric window by the cooling fluid flow path, in contact with which O-ring or the like, because it can suppress an increase in the temperature of the weak material portion formed heat deterioration due to heat of these members ensure that this can be prevented in, etc. present invention correspondingly be set high microwave power excellent effects.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

第1図は本発明に係るプラズマプロセス装置の要部縦断面図、第2図は他の実施例を示す要部縦断面図、第3図はプラズマプロセス装置の構造を示す概略縦断面図、第4図は従来装置の構造を示す第3図の一部拡大縦断面図である。 Figure 1 is a fragmentary longitudinal sectional view of a plasma processing apparatus according to the present invention, Figure 2 is a fragmentary longitudinal sectional view showing another embodiment, FIG. 3 is a schematic longitudinal sectional view showing the structure of a plasma processing apparatus, Figure 4 is a partially enlarged longitudinal sectional view of a third diagram showing the structure of a conventional device. 1b……冷却水路、3……シート、22……冷却水管、31… 1b ...... cooling water channel, 3 ...... sheet, 22 ...... cooling water pipe, 31 ...
…プラズマ生成室、33……導波管、36……誘電体窓、40 ... plasma generation chamber, 33 ...... waveguide, 36 ...... dielectric window, 40
……Oリング ...... O-ring

Claims (1)

    (57)【特許請求の範囲】 (57) [the claims]
  1. 【請求項1】誘電体窓によって封止された開口部の外部にマイクロ波導波管の一方の端部を対向配置したプラズマ生成室を有するプラズマプロセス装置において、 前記誘電体窓と前記端部を熱伝達可能に結合させている前記マイクロ波導波管と、 前記誘電体窓と前記端部との間、又は前記マイクロ波導波管外周部の前記端部近傍に設けられる冷却液通流路と を具備することを特徴とするプラズマプロセス装置。 1. A plasma processing apparatus having a plasma generation chamber which is disposed opposite one end portion of the outside microwave waveguide openings sealed by the dielectric window, the end portion and the dielectric window said microwave waveguide that is heat transfer coupled, during said dielectric window and said end portion, or a coolant flow path provided near said end of said microwave waveguide outer peripheral portion plasma processing apparatus characterized by comprising.
JP22499087A 1987-09-08 1987-09-08 Plasma processing apparatus Expired - Lifetime JP2625756B2 (en)

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Families Citing this family (2)

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Publication number Priority date Publication date Assignee Title
US6502529B2 (en) * 1999-05-27 2003-01-07 Applied Materials Inc. Chamber having improved gas energizer and method
US7527706B2 (en) 2002-10-10 2009-05-05 Tokyo Electron Limited Plasma processing apparatus, process vessel for plasma processing apparatus and dielectric plate for plasma processing apparatus

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5646303A (en) * 1979-09-25 1981-04-27 Toshiba Corp Aperture waveguide
JPS5691501A (en) * 1979-12-03 1981-07-24 Varian Associates Circular mode microwave window
JPS5696842A (en) * 1979-12-28 1981-08-05 Fujitsu Ltd Microwave plasma treating apparatus
JPS58125820A (en) * 1982-01-22 1983-07-27 Toshiba Corp Electronic cyclotron resonance type discharger
JPS59125628A (en) * 1982-12-29 1984-07-20 Fujitsu Ltd Microwave treating device
JPS59182964A (en) * 1982-12-01 1984-10-17 Leybold Heraeus Gmbh & Co Kg Device for coating substrate by addition reaction of plasma-excited atoms or molecules
JPS6091636A (en) * 1983-10-25 1985-05-23 Toshiba Corp Electron beam drawing device
JPS60264032A (en) * 1984-06-11 1985-12-27 Nippon Telegr & Teleph Corp <Ntt> Microwave ion source
JPS6147628A (en) * 1984-08-13 1986-03-08 Nippon Telegr & Teleph Corp <Ntt> Formation of semiconductor thin film and apparatus therefor
JPS6283466A (en) * 1985-10-05 1987-04-16 Nissin Electric Co Ltd Heat conductor for ion treating apparatus
JPS62281425A (en) * 1986-05-30 1987-12-07 Fujitsu Ltd Cooling system for plasma treatment device
JPS6366827A (en) * 1986-09-09 1988-03-25 Nippon Telegr & Teleph Corp <Ntt> Microwave ion source
JPS63221622A (en) * 1987-03-10 1988-09-14 Fuji Electric Co Ltd Dry-type thin film processing equipment
JPS63291341A (en) * 1987-05-22 1988-11-29 Nippon Telegr & Teleph Corp <Ntt> Microwave ion source

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5646303A (en) * 1979-09-25 1981-04-27 Toshiba Corp Aperture waveguide
JPS5691501A (en) * 1979-12-03 1981-07-24 Varian Associates Circular mode microwave window
JPS5696842A (en) * 1979-12-28 1981-08-05 Fujitsu Ltd Microwave plasma treating apparatus
JPS58125820A (en) * 1982-01-22 1983-07-27 Toshiba Corp Electronic cyclotron resonance type discharger
JPS59182964A (en) * 1982-12-01 1984-10-17 Leybold Heraeus Gmbh & Co Kg Device for coating substrate by addition reaction of plasma-excited atoms or molecules
JPS59125628A (en) * 1982-12-29 1984-07-20 Fujitsu Ltd Microwave treating device
JPS6091636A (en) * 1983-10-25 1985-05-23 Toshiba Corp Electron beam drawing device
JPS60264032A (en) * 1984-06-11 1985-12-27 Nippon Telegr & Teleph Corp <Ntt> Microwave ion source
JPS6147628A (en) * 1984-08-13 1986-03-08 Nippon Telegr & Teleph Corp <Ntt> Formation of semiconductor thin film and apparatus therefor
JPS6283466A (en) * 1985-10-05 1987-04-16 Nissin Electric Co Ltd Heat conductor for ion treating apparatus
JPS62281425A (en) * 1986-05-30 1987-12-07 Fujitsu Ltd Cooling system for plasma treatment device
JPS6366827A (en) * 1986-09-09 1988-03-25 Nippon Telegr & Teleph Corp <Ntt> Microwave ion source
JPS63221622A (en) * 1987-03-10 1988-09-14 Fuji Electric Co Ltd Dry-type thin film processing equipment
JPS63291341A (en) * 1987-05-22 1988-11-29 Nippon Telegr & Teleph Corp <Ntt> Microwave ion source

Also Published As

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