JPH0481326B2 - - Google Patents
Info
- Publication number
- JPH0481326B2 JPH0481326B2 JP58052912A JP5291283A JPH0481326B2 JP H0481326 B2 JPH0481326 B2 JP H0481326B2 JP 58052912 A JP58052912 A JP 58052912A JP 5291283 A JP5291283 A JP 5291283A JP H0481326 B2 JPH0481326 B2 JP H0481326B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- etching
- ring
- shaped member
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 claims description 41
- 238000001312 dry etching Methods 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 150000003377 silicon compounds Chemical class 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 1
- 230000007246 mechanism Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000002159 abnormal effect Effects 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、マグネトロン放電を利用したドライ
エツチング装置の改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an improvement in a dry etching apparatus using magnetron discharge.
近年、集積回路は微細化の一途をたどり、最近
では最小寸法が１〜２〔μｍ〕のLSIも試作され
るに至つている。このような微細加工には、通常
平行平板型電極を有する反応容器内にCF4等の反
応性ガスを導入し、試料載置の電極に、例えば
13.56〔ＭHz〕の高周波電力を印加することにより
グロー放電を生じせしめ、プラズマ中の正イオン
を陰極（高周波電力印加電極）面上に生じる陰極
降下電圧VDCによつて加速して、このイオンを試
料に垂直に入射させて該試料を物理、化学反応に
よりエツチングする、所謂反応性イオンエツチン
グ（Reactive Ion Etching；RIE）が用いられて
いる。しかし、この平行平板電極によるRIEで
は、グロー放電の非常に低いイオン化効率（10-4
〜10-5）故に、例えばCF4＋H2ガスを用いたSiO2
のエツチング速度は高々300〜400〔Å／min〕で
あり、１〔μｍ〕厚のSiO2をエツチングするのに
40分以上もの時間を要し、量産性の上で極めて不
都合である。このため、エツチング速度の高速化
が望まれている。
In recent years, integrated circuits have become increasingly miniaturized, and recently LSIs with minimum dimensions of 1 to 2 [μm] have even been prototyped. For such microfabrication, a reactive gas such as CF 4 is usually introduced into a reaction vessel with parallel plate electrodes, and the electrodes on which the sample is placed are exposed to, e.g.
A glow discharge is generated by applying high-frequency power of 13.56 [MHz], and positive ions in the plasma are accelerated by the cathode drop voltage V DC generated on the cathode (high-frequency power application electrode) surface, and these ions are So-called reactive ion etching (RIE) is used, in which the irradiation is perpendicular to the sample and the sample is etched by a physical or chemical reaction. However, in RIE using parallel plate electrodes, the ionization efficiency of glow discharge is very low (10 -4
~10 -5 ) Therefore, for example, SiO 2 using CF 4 + H 2 gas
The etching speed is at most 300 to 400 [Å/min], and it takes
It takes more than 40 minutes, which is extremely inconvenient in terms of mass production. Therefore, it is desired to increase the etching speed.
これに対し本発明者等は、高周波電力印加の陰
極下に永久磁石からなる磁場発生手段を設け、高
周波電力による電界とを直交する磁界を形成して
電子を（電界）×（磁界）方向にドリフト運動さ
せ、かつこの電子軌道を閉回路とすることによ
り、電子とガス分子との衝突解離を促進して放電
効率を向上させたマグネトロン放電利用のドライ
エツチング装置を開発した（特願昭55−173821
号）。そして、この装置を用いることにより、エ
ツチング速度の大幅な向上をはかり得た。例え
ば、CF4＋H2ガスを用いたSiO2のエツチング速
度は１〔μｍ／min〕以上、ポリSiやAl等も塩素
系のガスを用いることにより１〔μｍ／min〕の
エツチング速度が得られ、量産性の高いエツチン
グが達成されるようになつた。 In response, the present inventors provided a magnetic field generating means made of a permanent magnet under the cathode to which high-frequency power is applied, and created a magnetic field perpendicular to the electric field caused by the high-frequency power to move electrons in the (electric field) x (magnetic field) direction. We have developed a dry etching device using magnetron discharge that improves discharge efficiency by promoting collisional dissociation between electrons and gas molecules by causing drift motion and making the electron orbit a closed circuit. 173821
issue). By using this apparatus, it was possible to significantly improve the etching speed. For example, the etching rate of SiO 2 using CF 4 + H 2 gas is 1 [μm/min] or more, and the etching rate of poly-Si, Al, etc. is 1 [μm/min] using chlorine gas. Etching that is highly mass-producible has become possible.
しかしながら、本発明者等の実験によれば、上
記の装置の如くマグネトロン放電を用いたエツチ
ングにあつては次のような問題を招いた。第１図
は上記装置により塩素系ガスを用いてリン添加ポ
リSiをエツチングしたときの試料（100mmφのウ
エハ）内のエツチングの深さ分布を示す特性図で
ある。このときのエツチング条件は高周波電力
400〔Ｗ〕エツチング圧力0.1〔Torr〕、ガス流流50
〔SCCM〕とした。また、試料位置50〔mm〕は試料
の中心を示している。第１図から試料内半径R1
＝50〔mm〕では均一なエツチング深さであるが、
周辺部においては急激な立ち上がりが見られる。
このため、全体の均一性は±30〔％〕以上にも達
することが判明した。このようなマグネトロン放
電を用いたエツチングの不均一性は、半導体素子
の製造歩留り低下を招き好ましくない。 However, according to experiments conducted by the present inventors, etching using magnetron discharge as in the above-mentioned apparatus caused the following problems. FIG. 1 is a characteristic diagram showing the etching depth distribution within a sample (100 mm diameter wafer) when phosphorus-doped poly-Si was etched using a chlorine-based gas using the above-mentioned apparatus. The etching condition at this time is high frequency power.
400 [W] Etching pressure 0.1 [Torr], gas flow rate 50
[SCCM]. Further, the sample position 50 [mm] indicates the center of the sample. From Figure 1, the sample inner radius R 1
= 50 [mm], the etching depth is uniform, but
A rapid rise can be seen in the periphery.
Therefore, it was found that the overall uniformity reached more than ±30%. Such nonuniformity in etching using magnetron discharge is undesirable because it leads to a decrease in the manufacturing yield of semiconductor devices.
上述した周辺のエツチング速度が速くなる傾向
は通常のRIEにおいても観察されるもので、RIE
では試料の周囲にリング状の部材を配置してエツ
チング均一性の向上をはかることが試みられてい
る。しかし、マグネトロン放電を利用したドライ
エツチング装置では、前述の通りイオン化効率が
大幅に高まつたことにより、リング状部材を使用
すると該部材と試料との間で異常放電が生じるこ
とが判明した。また、上記リング状部材を用いる
場合、材料を上下動し試料を陰極状に配置する試
料上下機構とリング状部材とが接触する虞れがあ
る。これを避けるためにリング状部材試料との間
を十分に離すとエツチングの均一性は得られなく
なる。 The above-mentioned tendency for the peripheral etching speed to increase is also observed in normal RIE;
Attempts have been made to improve etching uniformity by arranging a ring-shaped member around the sample. However, in a dry etching apparatus using magnetron discharge, the ionization efficiency has been greatly increased as described above, and it has been found that when a ring-shaped member is used, abnormal discharge occurs between the member and the sample. Furthermore, when using the ring-shaped member, there is a risk that the ring-shaped member may come into contact with a sample lifting mechanism that moves the material up and down and arranges the sample like a cathode. In order to avoid this, if the ring-shaped member and the sample are separated sufficiently, uniform etching will not be obtained.
本発明の目的は、リング状部材と被エツチング
試料との間の異常放電を招くことなく、試料を均
一性良く高速にエツチングすることができ、エツ
チング信頼性向上、及び素子製造歩留り向上等を
はかり得るドライエツチング装置を提供すること
にある。
An object of the present invention is to be able to etch a sample at high speed with good uniformity without causing abnormal discharge between the ring-shaped member and the sample to be etched, and to improve etching reliability and element manufacturing yield. An object of the present invention is to provide a dry etching device that obtains the desired results.
本発明の骨子は、マグネトロン放電を用いたエ
ツチング装置において、被エツチング試料の周囲
に配置するリング状部材にテーパを付けることに
ある。
The gist of the present invention is to taper a ring-shaped member disposed around a sample to be etched in an etching apparatus using magnetron discharge.
すなわち本発明は、高周波電力が印加されると
共に、その表面側に被エツチング試料が載置され
る陰極及び陰極に対向配置された陽極を備えた真
空容器と、この真空容器内に反応性ガスを導入す
る手段と、前記電極間の磁界と直交する磁場を前
記陰極表面に生成せしめる磁場発生手段とを具備
し、各電極間にマグネトロン放電を生起して試料
をエツチングするドライエツチング装置におい
て、前記陰極の上に前記陰極上に載置された試料
の周囲を囲むように周辺部材を設け、かつこの周
辺部材の開口に前記陽極側に広つたテーパを形成
するようにしたものである。 That is, the present invention includes a vacuum container to which high-frequency power is applied, a cathode on the surface of which a sample to be etched is placed, and an anode placed opposite the cathode, and a reactive gas introduced into the vacuum container. A dry etching apparatus for etching a sample by generating a magnetron discharge between each electrode, comprising means for introducing a magnetic field between the electrodes, and a magnetic field generating means for generating a magnetic field on the surface of the cathode perpendicular to the magnetic field between the electrodes. A peripheral member is provided on the cathode so as to surround the sample placed on the cathode, and an opening of the peripheral member is formed with a taper that widens toward the anode.
本発明によれば、被エツチング試料の周囲にリ
ング状部材を設けることにより、エツチングの均
一性向上をはかり得る。しかも、リング状部材の
開口にテーパを形成しているので、リング状部材
の陽極側角部と試料の陽極側角部とを十分離すこ
とができ、リング状部材と試料との間の異常放電
発生を未然に防止することができる。また、上記
テーパを形成したことにより、試料上下動機構と
リング状部材との接触を防止し得る等の利点があ
る。
According to the present invention, by providing a ring-shaped member around the sample to be etched, it is possible to improve the uniformity of etching. Moreover, since the opening of the ring-shaped member is tapered, the anode-side corner of the ring-shaped member and the anode-side corner of the sample can be sufficiently separated, and abnormal discharge between the ring-shaped member and the sample can be prevented. This can be prevented from occurring. Further, by forming the taper, there is an advantage that contact between the sample vertical movement mechanism and the ring-shaped member can be prevented.
第２図は本発明の一実施例に係わるドライエツ
チング装置を示す概略構成図である。図中１は陽
極として作用する接地された真空容器であり、こ
の真空容器１は試料２を載置した陰極３により、
永久磁石４からなる磁場発生手段およびその駆動
系５，６が収められている高真空の領域と、試料
２が置かれているエツチング領域とに分離されて
いる。高真空領域は前記磁石４による放電を防止
するため、排気口７を介して、例えば拡散ポンプ
系により１×10-4〔Torr〕以下に排気されてお
り、エツチング室と真空的連結は電磁弁８により
駆動される仕切弁９により行われ実際のエツチン
グ時にはこの仕切弁９は閉じられ、エツチング室
は排気口１０を介して、例えばメカニカルブース
タ＋ロータリポンプ系により排気される。また、
放電は閉ループを形成しＮ−Ｓ間隙上のマグネト
ロン放電１１と周辺のグロー放電１２とからな
り、エツチングは前記永久磁石４の１方向走査
（この例では、駆動モータ１６による支持棒６の
回転運動が歯車５により直線運動へ移ることによ
り紙面左右方向へ動くものとする）に追随したマ
グネトロン放電１１を試料２上で走査しながら行
われる。さらに、エツチング中試料２は、静電チ
ヤツク機構１４により陰極３へ密着させられ、水
冷機構１５により冷却され、これにより試料２の
温度上昇が防止される。また、エツチング終了時
には試料２は試料上下動機構１６にガイドされ、
速やかに陰極３を離れ、逆に次にエツチングされ
る試料は同様にして陰極３にセツトされるものと
なつている。
FIG. 2 is a schematic diagram showing a dry etching apparatus according to an embodiment of the present invention. In the figure, 1 is a grounded vacuum container that acts as an anode.
It is separated into a high vacuum area in which a magnetic field generating means consisting of a permanent magnet 4 and its drive systems 5 and 6 are housed, and an etching area in which a sample 2 is placed. In order to prevent the discharge caused by the magnet 4, the high vacuum region is evacuated to 1×10 -4 [Torr] or less via an exhaust port 7, for example, by a diffusion pump system, and the vacuum connection with the etching chamber is made by a solenoid valve. During actual etching, the gate valve 9 is closed and the etching chamber is evacuated via the exhaust port 10, for example, by a mechanical booster+rotary pump system. Also,
The discharge forms a closed loop and consists of a magnetron discharge 11 on the N-S gap and a glow discharge 12 in the periphery. The magnetron discharge 11 is scanned over the sample 2, following the motion of the magnetron 11, which is assumed to move in the horizontal direction on the paper by shifting to a linear motion by the gear 5. Further, during etching, the sample 2 is brought into close contact with the cathode 3 by the electrostatic chuck mechanism 14 and cooled by the water cooling mechanism 15, thereby preventing the sample 2 from rising in temperature. Furthermore, at the end of etching, the sample 2 is guided by the sample vertical movement mechanism 16,
The sample immediately leaves the cathode 3, and conversely, the sample to be etched next is set on the cathode 3 in the same manner.
一方、前記陰極３の下面側には試料２を囲むよ
うリング状部材１７が取り付けられている。この
リング状部材１７は、例えばアルミナ板からなる
もので、第３図に平行図を第４図に断面図を示す
如くその開口にテーパ１７ａが形成されている。
ここで、リング状部材１７の寸法としては、第５
図に示す如くその厚さＴを１〔mm〕開口のテーパ
角θを45〔度〕、試料２との距離Ｄを１〔mm〕とし
た。なお、前記第２図中１８は高周波電源、１９
はマツチング回路、２０はＯリングシールを示
し、また２１〜２４はそれぞれ弗素樹脂等からな
る絶縁物を示している。 On the other hand, a ring-shaped member 17 is attached to the lower surface side of the cathode 3 so as to surround the sample 2. This ring-shaped member 17 is made of, for example, an alumina plate, and has a taper 17a formed at its opening, as shown in a parallel view in FIG. 3 and in a sectional view in FIG.
Here, the dimensions of the ring-shaped member 17 are as follows:
As shown in the figure, the thickness T was 1 [mm], the taper angle θ of the opening was 45 [degrees], and the distance D from the sample 2 was 1 [mm]. In addition, 18 in the said FIG. 2 is a high frequency power supply, 19
Reference numeral 20 indicates a matching circuit, 20 indicates an O-ring seal, and 21 to 24 each indicate an insulator made of fluororesin or the like.
このように構成された本装置を用い、被エツチ
ング試料２として直径100〔mm〕、厚さ0.7〔mm〕の
リン添加ポリSiをエツチングした結果、試料２と
リング状部材１７との間の異常放電は全く見られ
ず均一性良い高速エツチングを行うことができ
た。ここで、上記異常放電が防止されるのは、前
記第５図に示す如くリング状部材１７の開口にテ
ーパ１７ａが形成されているので、リング状部材
１７の角部３１と試料２の角部３２とが十分離れ
るためである。また、均一性良いエツチングが可
能となるのは、リング状部材１７の配置及び開口
に形成したテーパ１７ａにより、高密度プラズマ
による試料２の周辺部のエツチングが抑制され、
その結果として周辺部のエツチング速度が中央部
のエツチング速度に略等しくなるためであると考
えられる。 As a result of etching phosphorus-doped poly-Si with a diameter of 100 [mm] and a thickness of 0.7 [mm] as the sample 2 to be etched using this apparatus configured in this way, an abnormality between the sample 2 and the ring-shaped member 17 was detected. No discharge was observed, and high-speed etching with good uniformity was possible. Here, the abnormal discharge is prevented because the taper 17a is formed in the opening of the ring-shaped member 17 as shown in FIG. This is because it is sufficiently far away from 32. Furthermore, etching with good uniformity is possible because the arrangement of the ring-shaped member 17 and the taper 17a formed in the opening suppress the etching of the peripheral part of the sample 2 caused by high-density plasma.
This is thought to be because as a result, the etching rate in the peripheral area becomes approximately equal to the etching rate in the central area.
上記の如くリング状部材１７にテーパ１７ａを
設けることによつて、エツチングの均一性が改善
されることが判明したが、この均一性は、テーパ
角θ、距離Ｄ及び試料２の厚さ等によつて変化す
る。第６図は試料２の厚みを0.7〔mm〕リング状部
材の厚さを２〔mm〕とし、テーパ角θを可変した
場合のエツチング均一性の変化を測定して示す特
性図である。なお、図中○印はリング状部材１７
と試料２との距離Ｄ＝１〔mm〕、△印はＤ＝３
〔mm〕、□印はＤ＝５〔mm〕の場合を示している。
この図から距離Ｄ＝１〜５〔mm〕の範囲でテーパ
角θの選択により±数〔％〕の良好な均一性が得
られることが判る。第７図は距離Ｄの代わりにリ
ング状部材１７の厚さＴをパラメータとした場合
の測定結果を示す特性図である。なお、距離Ｄは
２〔mm〕とし、図中●印はリング状部材１７の厚
さＴ＝１〔mm〕、▲印はＴ＝２〔mm〕、■域はＴ＝３
〔mm〕の場合を示している。この図から厚さＴを
可変してもテーパ角θを適当な値に選択により±
〔％〕の良好な均一性が得られることが判る。す
なわち、リング状部材のテーパ角が約60°以上で
は、前記リング状部材の厚みが厚いほどテーパを
つけない場合（θ＝90°）と比べ良好な均一性が
得られ、テーパ角が約60°以下で薄いなど良好な
均一性となる。 It has been found that the uniformity of etching is improved by providing the taper 17a on the ring-shaped member 17 as described above, but this uniformity depends on the taper angle θ, the distance D, the thickness of the sample 2, etc. It changes over time. FIG. 6 is a characteristic diagram showing measured changes in etching uniformity when the thickness of sample 2 is 0.7 [mm] and the thickness of the ring-shaped member is 2 [mm] and the taper angle θ is varied. In addition, the circle mark in the figure indicates the ring-shaped member 17.
Distance between and sample 2 D = 1 [mm], △ mark is D = 3
[mm], □ indicates the case where D=5 [mm].
From this figure, it can be seen that good uniformity of ±several [%] can be obtained by selecting the taper angle θ in the range of distance D=1 to 5 [mm]. FIG. 7 is a characteristic diagram showing measurement results when the thickness T of the ring-shaped member 17 is used as a parameter instead of the distance D. Note that the distance D is 2 [mm], and in the figure, the ● mark indicates the thickness of the ring-shaped member 17, T = 1 [mm], the ▲ mark indicates T = 2 [mm], and the ■ area indicates T = 3 [mm].
The case of [mm] is shown. From this figure, even if the thickness T is varied, the taper angle θ can be set to an appropriate value by selecting ±
It can be seen that a good uniformity of [%] can be obtained. That is, when the taper angle of the ring-shaped member is approximately 60° or more, the thicker the ring-shaped member is, the better uniformity can be obtained compared to the case where no taper is applied (θ = 90°), and the taper angle is approximately 60°. If the thickness is less than 100°C, it will be thin and have good uniformity.
このように本装置によれば、被エツチング試料
２の周囲にリング状部材１７を配置し、このリン
グ状部材１７の開口に適当なテーパ１７ａを形成
したことによつて、エツチング均一性の大幅な向
上をはかることができる。しかも、上記テーパ１
７ａの形成によりリング状部材１７と試料２とを
近接した状態でも放電が集中すると思われる角部
３１，３２間を十分離すことができ、これにより
異常放電を防止し得ると云う利点がある。また、
上記テーパ１７ａの形成により、前記第４図に示
す如くリング状部材１７と試料上下動機構１６と
の接触が未然に防止されると等の利点もある。 As described above, according to the present apparatus, by arranging the ring-shaped member 17 around the sample to be etched 2 and forming an appropriate taper 17a in the opening of this ring-shaped member 17, the etching uniformity can be greatly improved. You can make improvements. Moreover, the taper 1
The formation of 7a has the advantage that even when the ring-shaped member 17 and the sample 2 are close to each other, it is possible to sufficiently separate the corners 31 and 32 where discharge is likely to be concentrated, thereby preventing abnormal discharge. Also,
The formation of the taper 17a has the advantage that contact between the ring-shaped member 17 and the sample vertical movement mechanism 16 is prevented, as shown in FIG. 4.
なお、本発明は上述した実施例に限定されるも
のではない。例えば、前記リング状部材の材質は
アルミナに限るものではなくシリコン、シリコン
化合物、若しくは有機物等の耐エツチング性の強
いものであればよい。また、リング状部材はその
表面を上記耐エツチング性の強い材料で被覆され
たものであつてもよい。さらに、リング状部材の
厚みやテーパ角等は、試料の厚み、外径及び試料
との距離等の条件に応じて適宜定めればよいもの
である。また、ポリSiのエツチングに限らず、
SiO2その他の材料のエツチングに適用できるの
は勿論のことである。要するに本発明は、その要
旨を逸脱しない範囲で、種々変形して実施するこ
とができる。 Note that the present invention is not limited to the embodiments described above. For example, the material of the ring-shaped member is not limited to alumina, but may be any material with strong etching resistance such as silicon, silicon compounds, or organic materials. Further, the surface of the ring-shaped member may be coated with the above-mentioned highly etching-resistant material. Furthermore, the thickness, taper angle, etc. of the ring-shaped member may be determined as appropriate depending on conditions such as the thickness of the sample, the outer diameter, and the distance from the sample. In addition, it is not limited to poly-Si etching.
Of course, it can be applied to etching SiO 2 and other materials. In short, the present invention can be implemented with various modifications without departing from the gist thereof.
第１図は従来装置の問題点を説明するためのも
ので試料位置とエツチング深さとの関係を示す特
性図、第２図乃至第７図はそれぞれ本発明の一実
施例を説明するためのもので、第２図はマグネト
ロン放電利用のドライエツチング装置を示す概略
構成図、第３図は上記装置の要部構成を示す平面
図、第４図は第３図の矢視Ａ−Ａ断面図、第５図
はリング状部材の要部を拡大して示す断面図、第
６図及び第７図はそれぞれテーパ角度とエツチン
グ均一性との関係を示す特性図である。
１……真空容器、２……被エツチング試料、３
……陰極、４……磁石、５……歯車、６……支持
棒、７，１０……排気口、８……電磁弁、９……
仕切弁、１１……マグネトロン放電、１２……グ
ロー放電、１３……モータ、１４……静電チヤツ
ク、１５……水冷機構、１６……試料上下動機
構、１７……リング状部材、１８……高周波電
源、１９……マツチング回路、２０……Ｏリング
シール、２１，〜，２４……絶縁物、３１，３２
……角部。
Fig. 1 is a characteristic diagram showing the relationship between the sample position and etching depth to explain the problems of the conventional device, and Figs. 2 to 7 are each used to explain one embodiment of the present invention. FIG. 2 is a schematic configuration diagram showing a dry etching device using magnetron discharge, FIG. 3 is a plan view showing the configuration of the main parts of the device, and FIG. 4 is a sectional view taken along arrow A-A in FIG. 3. FIG. 5 is a sectional view showing an enlarged main part of the ring-shaped member, and FIGS. 6 and 7 are characteristic diagrams showing the relationship between the taper angle and etching uniformity, respectively. 1... Vacuum container, 2... Sample to be etched, 3
... Cathode, 4 ... Magnet, 5 ... Gear, 6 ... Support rod, 7, 10 ... Exhaust port, 8 ... Solenoid valve, 9 ...
Gate valve, 11... Magnetron discharge, 12... Glow discharge, 13... Motor, 14... Electrostatic chuck, 15... Water cooling mechanism, 16... Sample vertical movement mechanism, 17... Ring-shaped member, 18... ...High frequency power supply, 19...Matching circuit, 20...O ring seal, 21, ~, 24...Insulator, 31, 32
...corner.
Claims (1)
被エツチング試料が載置される陰極及びこの陰極
に対向配置された陽極を備えた真空容器と、この
真空容器内に反応性ガスを導入する手段と、前記
電極間の電界と直交する磁場を前記陰極表面に生
成せしめる磁場発生手段と、前記陰極の上に該陰
極上に配置された試料と重なることなく、該試料
の周囲を囲むように設けられた周辺部材とを具備
し、前記周辺部材の試料側が前記陽極側に広がつ
たテーパ形状であることを特徴とするドライエツ
チング装置。 ２ 前記周辺部材は、シリコン、シリコン化合
物、有機物若しくはアルミナからなるもの、或い
は上記のいずれかで被覆されたものであることを
特徴とする特許請求の範囲第１項記載のドライエ
ツチング装置。 ３ 前記周辺部材は、リング状に形成されている
ことを特徴とする特許請求の範囲第１項記載のド
ライエツチング装置。[Scope of Claims] 1. A vacuum vessel equipped with a cathode to which high-frequency power is applied and a sample to be etched placed on the surface thereof, and an anode placed opposite to the cathode, and a reactive material inside the vacuum vessel. means for introducing gas; magnetic field generating means for generating a magnetic field on the surface of the cathode perpendicular to the electric field between the electrodes; 1. A dry etching apparatus comprising: a peripheral member provided so as to surround the etching apparatus, the peripheral member having a tapered shape such that a sample side of the peripheral member widens toward the anode side. 2. The dry etching apparatus according to claim 1, wherein the peripheral member is made of silicon, a silicon compound, an organic substance, or alumina, or is coated with any of the above. 3. The dry etching apparatus according to claim 1, wherein the peripheral member is formed in a ring shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5291283A JPS59178731A (en) | 1983-03-29 | 1983-03-29 | Dry etching apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5291283A JPS59178731A (en) | 1983-03-29 | 1983-03-29 | Dry etching apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59178731A JPS59178731A (en) | 1984-10-11 |
| JPH0481326B2 true JPH0481326B2 (en) | 1992-12-22 |
Family
ID=12928040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5291283A Granted JPS59178731A (en) | 1983-03-29 | 1983-03-29 | Dry etching apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59178731A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0663107B2 (en) * | 1984-11-14 | 1994-08-17 | 東京エレクトロン山梨株式会社 | Parallel plate type dry etching device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5680135A (en) * | 1979-12-04 | 1981-07-01 | Nec Corp | Substrate holder for ion etching device |
| JPS5827983A (en) * | 1981-08-12 | 1983-02-18 | Toshiba Corp | Dry etching method |
-
1983
- 1983-03-29 JP JP5291283A patent/JPS59178731A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59178731A (en) | 1984-10-11 |
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