JP2617402B2 - Semiconductor device, electronic circuit device, and manufacturing method thereof - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, an electronic circuit device, and a small, lightweight, thin, and suitable for surface mounting, in which a semiconductor element fixed to a conductive pattern of an electrically insulating substrate is resin-sealed. It relates to a method for producing them.

[0002]

2. Description of the Related Art In general, converter power supply equipment and the like are required to be further reduced in size, and development of an on-board power supply (hereinafter referred to as OBP) by a surface mounting method is being advanced. However, in order to convert a large-capacity converter into a small-sized OBP, there is a disadvantage that some of the semiconductor components used therein are too large and cannot be reduced in size as a whole. Especially a relatively large Schottky barrier diode,
Semiconductor components such as bipolar transistors and MOSFETs generate a large amount of heat from semiconductor elements. Therefore, a metal heat sink and external leads are simultaneously transfer-molded to enhance the heat radiation effect. However, for this reason, the components have a large shape, and it is difficult to mount the components on a substrate to reduce the overall size.

A semiconductor element, which is a bare chip of semiconductor parts such as a Schottky barrier diode, a bipolar transistor, and a MOSFET, can be mounted on a substrate as it is and bonded and molded. In the case of the semiconductor device described above, the reliability such as thermal shock resistance and moisture resistance is insufficient and there is room for study. In addition, many circuit components are surface-mounted components that are resin-encapsulated. If a part is a bare chip, it must be mounted separately and processed in different processes, requiring expensive dedicated equipment and increasing the number of manufacturing steps. However, there is a disadvantage that the cost is increased.

[0004] The above semiconductor element is soldered to an alumina substrate or the like having good heat dissipation, a wire bonding is separately performed between the electrode element and the like with a metal wire, and then a sealing element is sealed by dropping a sealing resin. There is also a way to do it. The back surface of the substrate is an electrode which is electrically connected by via holes, and is suitable for miniaturization. However, since these sealing resin cured products are molded into a convex lens surface and are not flat, there is a disadvantage that automatic mounting by vacuum suction is not possible.

As described above, electronic components used for surface mounting are required to be small, thin, lightweight, low-cost, and the like, in addition to quality improvement. Generally, capacitors, resistors,
Circuit components such as coils, transformers, ICs, diodes, and transistors are designed in a shape that can be easily mounted on a substrate, and a transition has been made to a manufacturing method in which circuit components are surface-mounted at high speed using an automatic insertion machine. According to this method, cream solder is applied to a predetermined position of a conductive pattern on a substrate, circuit components are mounted thereon and temporarily bonded, and soldering is performed by reflow heat treatment or the like. In the surface mounting method, since the circuit components are suctioned and mounted under reduced pressure, the shape is inevitably lightweight, and the surface is preferably flat,
The exterior is mass-produced by transfer molding or the like using epoxy resin or the like with excellent electrical insulation properties to maintain quality.

A general lead wire type surface mount type semiconductor device will be described with reference to FIG. 10. A pair of lead electrodes 5 whose front end portions are bent to form a flat surface is described.
A semiconductor element 52 is soldered to one of the flat surfaces 0, 51, and the semiconductor element 52 is connected to the other lead electrode 51 by an internal lead terminal 53.
The flat portions 0 and 51 and the semiconductor element 52 are molded with a sealing resin 54.

Further, in order to reduce the size and thickness, save labor, and reduce the number of processes, a bare chip or flip chip is directly mounted on a conductive pattern of a substrate by a die bonding method or the like, and the electrodes and wiring patterns are formed as necessary. There is also a method in which bonding is performed on a conductive pattern including the resin, and an epoxy resin having good insulating properties is dropped and coated. An example of this is described in JP-A-62-208652. As shown in FIG.
A semiconductor element 63 is bonded using a die bond material 62,
Electrical connection is made by the thin metal wires 63, and then a mold member 66 is applied on the dam 65, and a sealing resin 67 is injected into the package from the groove 64 of the dam 65. After the curing of the sealing resin 67, the mold member 66 is removed to obtain a resin-sealed semiconductor device.

[0008]

However, in the case of the semiconductor device shown in FIG. 10, since the pair of lead electrodes 50 and 51 are bent in a U-shape, there is a great difficulty in reducing the thickness. Since transfer molding must be sequentially performed one by one including a part of the pair of lead electrodes 50 and 51, a special transfer molding device is required, and mass production is difficult. Further, since the pair of lead electrodes 50 and 51 are used by being bent in a U-shape,
Downsizing is also difficult.

Next, in the case of the one shown in FIG.
5 requires a step of applying a mold member 66 and injecting a sealing resin 67 into the package from the groove 64 of the dam 65, which is not suitable for mass production. Since it must be large, there is also a problem in terms of miniaturization.

Although not shown, in a power semiconductor device in which a lead extends from a sealing resin, a plurality of deburring steps including deburring at the base of the lead are performed after sealing with the resin. Therefore, it has been difficult to reduce the size of the semiconductor device itself.

The present invention is particularly suitable for mass production of flat, small, thin, lightweight, semiconductor devices such as Schottky barrier diodes, bipolar transistors, and field effect transistors having relatively large capacity, or other circuit components. It is an object of the present invention to provide various semiconductor devices, electronic circuit devices, and manufacturing methods that have high reliability and good characteristics such as thermal shock resistance, moisture resistance, and PCT test.

[0012]

Means for Solving the Problems In order to solve such a problem, in the first invention, at least one or more conductive patterns fixed to a predetermined conductive pattern formed on a first main surface of an electrically insulating substrate are provided. In the semiconductor device in which the semiconductor element is sealed with a sealing resin, the electrically insulating substrate is connected to the predetermined conductive pattern through a via hole on a second main surface opposite to the first main surface. Having an outer electrode of a patterned electrode pattern, having a flat upper surface having a size substantially equal to the area of the main surface of the electrically insulating substrate, and substantially between the periphery of the electrically insulating substrate and the upper surface. It is an object of the present invention to provide a surface-mounted semiconductor device having a divided side wall having a thickness of 2 mm or less.

In order to solve such a problem, the second
In the invention, the electrode pattern has a plurality of predetermined conductive patterns on the first main surface, and is connected to the predetermined conductive pattern through via holes in the second main surface opposite to the first main surface. An electrically insulating substrate having a plurality of scribe lines formed on the second main surface so as not to cover the predetermined conductive pattern and the electrode pattern, and fixed to each of the predetermined conductive patterns. One or more semiconductor elements, a resin that is continuously sealed over the entire surface of the electrically insulating substrate on which the conductive pattern is formed, and has a thickness of about 2 mm or less at a location corresponding to the scribe line. A semiconductor device provided with a limited sealing resin is provided.

In order to solve such a problem, the third
According to a second aspect of the present invention, there is provided a semiconductor device according to the second aspect, wherein a groove having a predetermined depth is provided at a position of the sealing resin corresponding to the scribe line.

In order to solve such a problem, the fourth
According to the present invention, there is provided an electronic circuit device according to any one of claims 1 to 3, wherein another circuit component in addition to the semiconductor element is electrically connected to the conductive pattern. Is what you do.

To solve such a problem, the fifth
In the invention, a plurality of predetermined scribe lines are provided on a first main surface, and a plurality of scribe lines are provided on a second main surface opposite to the first main surface so as not to cover the predetermined conductive pattern. After the at least one semiconductor element is fixed to each of the predetermined conductive patterns, the portion of the electrical insulating substrate on which the conductive patterns are formed is continuously formed over the entire surface. After sealing with a sealing resin, a groove is formed so that the thickness of the sealing resin at a position corresponding to the scribe line becomes approximately 2 mm or less, and an external force is applied after the sealing resin is cured. It is another object of the present invention to provide a method of manufacturing a semiconductor device, wherein the electric insulating substrate and the sealing resin are divided along the scribe lines to obtain individual semiconductor devices.

To solve such a problem, the sixth
In the invention, a plurality of predetermined scribe lines are provided on a first main surface, and a plurality of scribe lines are provided on a second main surface opposite to the first main surface so as not to cover the predetermined conductive pattern. After the at least one semiconductor element is fixed to each of the predetermined conductive patterns, the portion of the electrically insulating substrate where the conductive patterns are formed becomes flat over the entire surface. In the course of curing of the sealing resin, an external force is applied to divide the electrically insulating substrate and the sealing resin along the scribe lines to obtain individual semiconductor devices. A method for manufacturing a semiconductor device is provided.

To solve such a problem, the seventh
In the invention according to claim 6, after sealing the portion of the electrically insulating substrate on which the conductive pattern is formed with a sealing resin so as to be continuous over the entire surface, the sealing resin at a location corresponding to the scribe line And forming a groove having a predetermined depth in the semiconductor device.

In order to solve such a problem, the eighth
The method according to claim 6, wherein the sealing resin is divided in a state where the sealing resin is semi-cured at a temperature of 80% or less of a thermal deformation temperature at the time of complete curing. Is provided.

In order to solve such a problem, the ninth
According to the invention, there is provided a method of manufacturing a semiconductor device according to any one of claims 6 to 8, wherein the semiconductor device is divided into individual semiconductor devices and then further heated and cured.

In order to solve such a problem, according to a tenth aspect, in the tenth aspect, the first main surface has a plurality of predetermined conductive patterns on the first main surface and does not cover the predetermined conductive pattern. An electric insulating substrate having a plurality of scribe lines formed on a second main surface opposite to the first main surface, and after fixing at least one semiconductor element to each of the predetermined conductive patterns, the electric insulating substrate An active energy ray-curable resin is supplied over the entire surface on which the conductive pattern is formed to cover the entire surface, and a transparent mold member having a plurality of ridges having a predetermined height is provided thereon to cover the scribe line. By pressing the ridge portion so as to match the location of the active energy ray-curable resin to be formed, a groove is formed along the scribe line, and the surface is flattened. It is another object of the present invention to provide a method for manufacturing a semiconductor device, characterized in that an active energy ray-curable resin is cured by irradiating an active energy ray through the mold member and divided along the scribe lines.

In order to solve such a problem, first,
According to one aspect of the present invention, there is provided a method of manufacturing an electronic circuit device according to any one of claims 5 to 10, wherein another circuit component in addition to the semiconductor element is electrically connected to the conductive pattern. Is provided.

[0023]

Embodiment An embodiment of the present invention will be described with reference to FIG.

FIG. 1 shows an example of a transistor. Reference numeral 1 denotes a division made of a ceramic such as inorganic alumina, aluminum nitride, or glass, or a metal plate such as aluminum or copper to which an insulating coating such as polyimide is bonded. This is a large-area electrically insulating substrate in the front, and predetermined conductive patterns 1A are regularly formed in a matrix on one main surface. On the other main surface, another electrode pattern 1B corresponding to each of the conductive patterns 1A is formed, and the conductive pattern 1A and the electrode pattern 1B are connected to each other by a desired via hole (not shown). ing. These conductive patterns 1A and electrode patterns 1B
A conductive paste such as copper or tungsten is printed by silk printing or the like, baked, and formed as an electrode for a transistor.

The electrode pattern 1 B has a function as an external electrode that is soldered to a printed circuit pattern such as a printed circuit board (not shown). The scribe lines 1C are formed in a grid pattern on the surface on which the electrode pattern 1B is formed or on both surfaces so as not to cover the conductive pattern 1A and the electrode pattern 1B. This scribe line 1C is for making it easier to break a large-area resin molded product later, and is formed along a desired line by a mechanically formed groove such as a V-shape or an ultrasonic wave. It consists of a group of minute cracks that have been made, a material having a weakened material in the form of a line, and the like.

Next, the semiconductor element 2 is fixed to a predetermined portion of each conductive pattern 1 A with a solder layer 3, and then a metal wire 4 is wire-bonded so that the emitter electrode and the base electrode of the transistor are fixed to the predetermined portion of the conductive pattern 1 A. Connecting. Next, although not shown, normal passivation is performed using a precoat resin such as a polyimide varnish, and thereafter, all the conductive patterns 1A and the semiconductor elements 2 are uniformly sealed with a specific sealing resin 5, and thereafter, The semiconductor device is divided into individual cell type semiconductor devices. On this occasion,
In this embodiment, the scribe line 1C has a main surface of a large-area electrically insulating substrate opposite to the surface covered with the sealing resin 5,
In other words, if the scribe line 1C is formed only on the surface covered with the sealing resin 5 as in the related art, the sealing resin 5 enters the scribe line 1C. Therefore, it is difficult to divide even if a jig is used.

Here, the conductive pattern 1A and the electrode pattern 1B shown in FIG. 1 are for a single semiconductor element 2, but each of the conductive pattern 1A and the electrode pattern 1B is composed of one or more semiconductor elements, or other elements. It is also possible to easily form a circuit pattern suitable for a circuit configuration such as a hybrid integrated circuit or a power supply circuit having at least one or more active elements and passive elements mounted thereon. After these steps are performed, they can be uniformly sealed in the same manner, and then divided to obtain individual electronic circuit devices.

Next, the resin sealing will be described in detail. First, as the sealing resin 5, an electrically insulating resin such as an epoxy resin, a phenol resin, or a polyester resin is suitable, and a thermosetting resin having a composition that is gradually cured by heating is preferable. For reasons described below, semi-cured or resins that pass through the B-stage state, particularly those based on epoxy resins, are suitable. As curing agents and catalysts, acid anhydrides, phenolic resins, aromatic amines, imidazole, etc. Can be used. Pigments, fillers, and additives can also be used to maintain properties. Quartz powder, alumina and the like can be used as the filler, and generally a filler containing about 60% or more is preferable. Adhesion with the electrically insulating substrate 1, splitting property, release property, flowability,
It is also required to improve workability such as low-temperature curability, defoaming property, and low thixotropy, low expansion, and low content of impurity ions. As the thermoplastic resin, PPO or liquid crystal polymer can be used, but it is necessary to melt and inject.

Next, a specific compounding example of the epoxy resin-based sealing resin will be described. Epicron # 850 (Dainippon Ink & Chemicals) 15 parts Chissonox # 221 (Nippon Chisso) 10 parts Chissonox # 221 (Nippon Chisso) 10 parts Reactive diluent GAN (Nippon Kayaku) 5 parts Hyuzrex Y-60 (Dragon) Mori) 133 parts Epicron # B-4136 (Dainippon Ink & Chemicals) 27 parts 1B2MZ (Shikoku Chemicals) 0.5 parts Antifoaming agent (TSA-750 (Toshiba Silicone) 0.01 parts Total 190.51 parts

[0030] The thus-obtained blended product was mixed well with a stirrer and defoamed in a vacuum.

Next, a method of forming a molded product of the sealing resin having a flat upper surface using the sealing resin thus treated will be described. As described above, after covering the semiconductor element 2 and the like with a precoat resin such as a polyimide varnish as necessary, as shown in FIG. 2, a large-area electrically insulating substrate 1 is frame-shaped upper mold member having a height of 5 mm. 6 and a plate-shaped lower mold member 7 to prevent the sealing resin from leaking. Here, the mold member is not limited to metal, but may be a material such as rubber or plastic. In addition, it is convenient to use a mold that has been subjected to a mold release treatment or a silicone resin mold in order to improve the mold releasability. Sealing and packing are performed as necessary to prevent resin leakage, and a pressurizing mechanism for applying a necessary pressing force is also provided.

After the peripheral portion of the large-area electrically insulating substrate 1 before the division is sandwiched between the upper mold member 6 and the lower mold member 7, the liquid sealing resin as described above is coated with a thickness of about 1.5 mm. It is poured into the entire surface of the frame until it becomes a small size, placed in a vacuum device (not shown), and degassed in a vacuum. Since the air in the sealing resin is previously defoamed, the defoaming time during sealing can be reduced. The term “vacuum” as used herein means a reduced pressure enough to remove air in the sealing resin from the resin, and requires a degree of vacuum of at least about 100 mmHg. The liquid sealing resin is injected under normal pressure or under vacuum. Of course, the vacuum defoaming may be performed after the unfoamed resin is injected. If this defoaming step is not performed, traces of bubbles often remain on the surface of the sealing resin.

Then, the mold member is kept horizontal and 2 mmH
g / 5 minutes of vacuum degassing, and this is heated and cured in an atmosphere of 160 ° C. for about 2 hours. At this time, the upper surface of the molded product is flat. . Next, after removing the mold members 6 and 7 to obtain a molded product, the scribe line 1 on the back surface of the electrically insulating substrate 1 is obtained.
By applying an external force along C, it is possible to obtain a cell type semiconductor device which is divided into individual or divided into a plurality. Here, the heat curing temperature depends on the type of the sealing resin.
At 80 to 250 ° C, the time is in the range of 2 to 10 minutes suitable for mass production, and the temperature is 80 to 180 ° in the casting method.
C, the time is suitably about 10 minutes to 2 hours.

When the thickness of the sealing resin 5 is approximately 2 mm or less, it can be easily divided manually along the scribe line 1C without adversely affecting the semiconductor element, but the thickness of the sealing resin 5 exceeds approximately 2 mm. In this case, as shown in FIG. 3, a groove 5A having a constant depth such as a concave shape, a linear shape, or a V-shaped cut is preferably provided at a position corresponding to the scribe line 1C on the back surface of the electrically insulating substrate 1. The grooves 5A formed in a lattice shape have a depth such that the thickness from the bottom to the surface of the electrically insulating substrate 1 is approximately 2 mm or less. The thickness of the sealing resin 5 is 1 to 5 m, depending on the electronic circuit device such as a semiconductor device and a power supply.
When m is general and is considerably thick, the upper surface of a large-area resin molded product may bend, which may adversely affect the electrical characteristics. Therefore, by providing the lattice-shaped grooves 5A at the positions of the sealing resin 5 corresponding to the scribe lines 1C on the back surface of the electrically insulating substrate 1, it is possible to obtain a flat large-area resin molded product having relatively small deflection. it can.

Since this large-area resin molded product is formed by pouring the sealing resin over almost the entire surface of the electrically insulating substrate 1, the upper surface thereof is flat and smooth, and the individual semiconductor devices divided naturally are separated. Is smooth, but the divided side wall surface below the groove 5A is rougher than the upper surface, indicating that it is easily divided. When each groove 5A is formed from the upper surface of the sealing resin and divided, the area of the upper surface of each divided semiconductor device is naturally slightly smaller than the area of the electrically insulating substrate on the lower surface. In particular, since the difference has no meaning, the area of the upper surface of each semiconductor device is expressed as being approximately the same as the lower surface.

As a simple method of forming the groove 5A in a large-area resin molded product, a pressing mold member 8 as shown in FIG. There is a method in which a liquid sealing resin is poured in a state where the pressing mold member 8 is set in the lower mold member 7 in advance. Thereby, the upper surface of the sealing resin 5 except for the groove 5A is flattened. The pressing mold member 8 has a convex portion formed in a lattice at the same interval as the scribe line 1C on the back surface of the electrically insulating substrate 1, that is, a surface on which a ridge portion 8A is formed. The portion surrounded by the ridge 8A is lower than the ridge 8A, and the shape and height of the ridge 8A correspond to the groove 5A to be formed. The material and the like of the holding mold member 8 are the same as those of the upper mold member 6 and the lower mold member 7.

Although not shown here, in order to perform the resin sealing rationally, when the sealing resin is pressed by the pressing mold member, a place where excess sealing resin can escape is defined as an upper mold member. What is necessary is just to make it between a holding | maintenance mold member. Furthermore, if the holding mold member is set in a vacuum, a smooth surface with few bubbles can be obtained. If necessary, a pattern may be formed on the surface of the mold member, or an engraved mark such as a mark may be formed.

Further, specific examples of the resin sealing method will be described below. [Specific Example 1] A plurality of bare chip semiconductor elements 2 having a relatively large current capacity were mounted on a 0.4 mm thick electrically insulating substrate 1 made of alumina on which a plurality of conductive patterns 1A as shown in Fig. 1 were printed. The object is set on the mold member, and the thickness of the sealing resin is set to 1 mm. Using transfer mold equipment, transfer mold resin MP
-3000 (Nitto Denko) is heated and melted, and poured into the entire surface of the mold member. The temperature of the mold member is set at 180 ° C., and it is heated and cured for 2 minutes. When the cured product was removed from the mold member frame, a large-area molded product in which the entire surface of the sealing resin 5 was flat as shown in FIG. 5 was obtained. Electrically insulating substrate 1
When the semiconductor device was divided along the scribe line 1C provided on the back surface of the semiconductor device, a semiconductor device having a smooth upper surface and four rough side walls was obtained. This semiconductor device has a mounting area of 1/3 to 1/4 and a thickness of 1 as compared with a conventional element having the same current capacity.
/ 2 or less, which was very small and thin.

[Specific Example 2] A position facing a scribe line formed on the back surface of a 0.635-mm-thick electrically insulating substrate made of alumina formed by mounting predetermined circuit components on a plurality of identical circuit patterns and connecting them. Next, as shown in FIG. 3, a mold member as shown in FIG. 4, which gives a V-shaped groove having a depth of about 2 mm to the sealing resin, is aligned and set so that the thickness of the sealing resin becomes 4 mm. . The sealing resin of the above formulation example is pressed into a mold member, and the sealing resin is molded to a thickness of 4 mm. This is called mold member temperature 1
Heat at 50 ° C. for 10 hours to cure. When the cured product was removed from the mold member frame after curing, a large-area resin molded product having a lattice-shaped groove 5A formed on the surface of the sealing resin 5 as shown in FIG. 3 was obtained. When divided along the lattice-shaped groove 5A,
A resin-encapsulated electronic circuit device having a smooth upper surface and four divided side wall surfaces rougher than the upper surface was obtained.

The electronic circuit device thus obtained maintained the initial electrical characteristics, exhibited no adverse effects due to resin sealing and mechanical division, and obtained a good electronic circuit device.
This electronic circuit device also has a very small size and a mounting area of 1/3 to 1/4 and a thickness of almost 1/2 as compared with a similar device of the related art.
Thin and lightweight. The surface-mounted resin-sealed semiconductor device and the resin-sealed electronic circuit device thus obtained did not require any deburring step.

In the above embodiment, the case where a large-area resin molded product is divided after the sealing resin is completely cured has been described. An example will be described in which when a sealing resin is semi-cured (approximately 90% or less of a completely cured state) in the course of thermal curing using a conductive resin, heating is stopped and division is performed. In this case, a large-area molded product can be divided with a considerably small external force as compared with the division after curing of the sealing resin.

In this embodiment, a plurality of semiconductor elements, resistors, capacitors, inductors, and other circuit components (parts of which are partly formed) are formed on an alumina electrically insulating substrate 1 on which a plurality of circuit patterns are printed in the same manner as described above. After mounting and fixing the bare chip), a predetermined connection is made to form a power supply circuit, and then a 2 mm-high (rubber) mold made of silicone rubber is mounted thereon and brought into close contact therewith. The epoxy-based sealing resin of the above-described formulation example was poured over the entire surface to a height of 2 mm, heated in an atmosphere of 120 ° C. for 15 minutes while vacuum degassing, and semi-cured to obtain a large-area resin molded product. . The heat deformation temperature of the sealing resin at the time of complete curing was 165 ° C., and the heat deformation temperature at the time of semi-curing was 72 ° C. When the silicone rubber (mold) is removed, the height of the sealing resin is 2 m.
m, a resin molded product having a large area with a flat surface was obtained, and the resin molded product could be easily divided by dividing along the scribe line on the back surface of the electrically insulating substrate 1.

Next, some specific examples will be described. [Specific Example 1] A plurality of semiconductor elements 2 mounted on a 0.5 mm thick electrically insulating substrate 1 made of alumina on which a plurality of conductive patterns 1A as shown in FIG. The mold was set on the upper mold member and the lower mold member, and a liquid epoxy-based sealing resin was injected into the entire surface of the mold member, overflowed, and the height was set to 3 mm. Next, vacuum defoaming is performed at 758 mmHg for 10 minutes, and this is heated in an atmosphere of 80 ° C. for 60 minutes to be partially cured. The heat distortion temperature at the time of complete curing of this resin is almost 1
The heat deformation temperature during semi-curing was 64 ° C.

The thus obtained sealing resin having a flat large area with a height of 3 mm has almost no bending and is divided along the scribe line 1 C on the back surface of the electrically insulating substrate 1. It was easy to break. Each of the divided semiconductor devices was heated at an ambient temperature of about 150 ° C. for about 20 hours to be completely cured. The side wall surface thus divided was rough compared to the smoothness of the upper surface, but was finely broken along the scribe line 1C, and could be sufficiently provided as a semiconductor product.

[Specific Example 2] A predetermined circuit component is mounted on a plurality of the same circuit patterns,
A V-shaped groove having a depth of approximately 1 mm as shown in FIG. 3 is formed at a position facing the scribe line formed on the back surface of the electrically insulative substrate made of alumina having a thickness of 0.4 mm as shown in FIG. 4 is set and the thickness of the sealing resin is set to 3 mm.
An epoxy / acid anhydride / imidazole-based sealing resin containing 70% of silica powder as in the formulation example is pressed into a mold member, and the sealing resin is molded to a thickness of 3 mm. This was heated at a mold member temperature of 160 ° C. for 10 minutes to be semi-cured, and a resin molding having a large area was removed from the mold member frame in the semi-cured state.
This large-area resin molded product had a slightly smaller deflection than that of the specific example 1, and division along the lattice-shaped groove 5A was easier. The heat deformation temperature of this resin at the time of complete curing is 1
While the heat deformation temperature during semi-curing is 130 ° C.
° C.

Each of the semiconductor devices thus obtained maintained the initial electrical characteristics, and no adverse effects due to resin sealing and mechanical division were observed.

As a result of conducting tests on the division of the sealing resin in a semi-cured state in various other ways, the sealing resin used in the above examples has a heat distortion temperature of 80 at the time of complete curing.
% At a temperature of not more than 5%, preferably 5%.
It has been found that it can be easily cracked in a semi-cured state at a temperature of 0% or less. In this case, the mechanical stress at the time of division can be reduced, and since the heat curing is performed at a temperature lower than that at the time of complete curing, the mechanical stress at the time of curing the sealing resin is also reduced. It was also found that the effect on the air could be sufficiently reduced.

In the above embodiments, a thermosetting resin is used. Next, a semiconductor device using an active energy ray-curable resin such as an ultraviolet ray-curable resin or an electron beam-curable resin that cures with an active energy ray or A method and apparatus for manufacturing an electronic circuit device will be described.

First, the typical composition of the active energy ray-curable resin is as follows. As the resin composition, an alkyd having an unsaturated group such as an acrylic acid group, an allyl group, an itaconic acid group, or a conjugated double bond introduced therein is used. Resin, acrylic resin, urethane resin, polyurethane resin, epoxy resin and the like can be mentioned. As other constituents, an oligomer monomer or the like is used for adjusting the viscosity, a photopolymerization initiator, a thermosetting catalyst is used, and ordinary pigments, dyes, fillers, and additives are added. If necessary, a resin which does not easily react with active energy rays, such as a thermosetting resin, can be used in combination.

Specific examples of the composition of the ultraviolet curable resin include: Gothrac UV-7000B (manufactured by Nippon Synthetic Chemical Industry Co., Ltd.) 66 parts by weight TMPTA (trimethylpropane triacrylate) 30 parts by weight Irgacure 651 (manufactured by Ciba-Geigy) 4 parts by weight Section ____________. 100 parts by weight

Next, using the ultraviolet-curable resin of such a composition example, a manufacturing apparatus for sealing a plurality of surfaces of the large-area electrically insulating substrate 1 in an island shape as described in the above embodiments. Will be described with reference to FIG. FIG. 6 (A),
(B) shows a front view and a side view, respectively, of the holding mold member 8 constituting a part of the manufacturing apparatus, which is made of a plastic resin such as a silicone resin or an acrylic resin, or a substantially transparent material such as glass.

The holding mold member 8 includes a base portion 8A and a holding portion 8B. The pressing portion 8B has a pressing surface 8B1 having substantially the same size as the surface surrounded by the inner wall of the frame-shaped upper mold member 6 shown in FIG. 8C, and the pressing surface 8B1 has a large area of electric insulation. A ridge 8B2 having a V-shaped cross section and a pattern corresponding to the grid-shaped scribe lines formed on the back surface of the conductive substrate 1 is formed in a grid. The height of the ridge 8B2 determines the thickness of the sealing resin formed on the large-area electrically insulating substrate 1, that is, the thickness of the sealing resin is substantially equal to that of the ridge 8B.
2 height. Further, through holes 8B3 for letting excess sealing resin escape are formed at four corners of the pressing portion 8B, and these through holes 8B3 communicate with the through holes 8A1 formed in the base portion 8A.

As shown in FIG. 5C, the upper mold member 6 is provided with a large-area electrically insulating substrate 1 along the lower portion of the inner wall.
A portion 6A substantially equal to the thickness of the lower mold member 7 and its outer shape is cut off, and accordingly, the large-area electrically insulating substrate 1 set on the flat surface of the lower mold member 7 is cut off from the lower mold member 7 and the upper mold member 6 It is held without gap by the wall of 6A. In such a state, the ultraviolet-curable resin (not shown) of the above-mentioned combination example is injected into the upper mold member 6 and vacuum degassed. Thereafter, the holding portion 8B in FIG.
The pressing portion 8B of the pressing mold member 8 is pushed into the upper mold member 6 so that the pressing surface 8B1 of the electric insulating substrate 1 has a large area.
(See FIG. 7). In this state, ultraviolet rays are irradiated from above the holding mold member 8.

The height of the lattice-shaped flank 8B2 is approximately 1.5
mm, that is, when the thickness of the sealing resin 5 is approximately 1.5 mm, a metal halide lamp (120 W / cm) is irradiated at a position at a height of approximately 10 cm from the upper surface of the sealing resin 5,
Ten passes at a speed of m / min allowed good curing.

Thereafter, the large-area electrically insulating substrate 1 is detached from the mold member, and is divided by scribe lines 1C formed on the back surface of the large-area electrically insulating substrate 1 by applying an external force. A very small and thin resin-sealed semiconductor device that rises almost vertically from the peripheral edge of the electrically insulating substrate,
Alternatively, a resin-sealed electronic circuit device was obtained. The surface mounting type resin-sealed semiconductor device and the resin-sealed electronic circuit device thus obtained have a mounting area of 1/3 to 1 /
4. Very small, thin and lightweight, with a thickness of almost half. Also, no deburring step of the sealing resin is required at all.

Next, FIG. 8 uses a large-area electrically insulating substrate 1 as shown in FIG. 1, mounts a semiconductor element or the like on the surface of the electrically insulating substrate on which the scribe line 1C is formed, and forms a resin seal. This is an example of stopping. In this case, the shore 8B2
The pressing mold member 8 having a flat top and a narrow width is used. By using such a mold member 8, a very small and thin surface-mounted resin-sealed semiconductor device, or a surface-mounted resin, in which the sealing resin rises perpendicularly from the peripheral edge of the individual electrically insulating substrate. A sealed electronic circuit device can be obtained.

Next, FIG. 9 shows a bare chip of a planar transistor suitable for application to the above-described semiconductor device.

This planar type transistor is formed by growing n.sup. ^{+ On an} n.sup. ⁺ Semiconductor substrate 10 having a high n-type impurity concentration.
N ⁻ epitaxial layer 11 having a sufficiently low impurity concentration
A p ⁺ emitter region 12 having a high p-type impurity concentration formed in the epitaxial layer 11 and an n ⁺ base region 1 having a high n-type impurity concentration formed in the semiconductor region 12
3. a collector electrode formed on an exposed surface of the semiconductor substrate in a hole extending to at least a surface of the semiconductor substrate; a collector bump electrode formed on the collector electrode; From the emitter electrode 16 and the emitter bump electrode 17 thereon, the base electrode 18 formed to be in ohmic contact with the base region 12 and the base bump electrode 19 formed thereon, and the metal film 20 for reducing the lateral resistance. Become. The feature of this planar transistor is that the collector bump electrode 15 and the emitter bump electrode 1
7 and the base bump electrode 19 are all on the same surface, and all of them are at the same level.

The conductive pattern of the electrically insulating substrate 1 shown in FIG. 1 is printed in advance so as to match the positions of the collector bump electrode 15, the emitter bump electrode 17, and the base bump electrode 19, and a collector pattern is formed on the conductive pattern. By fixing the bump electrode 15, the emitter bump electrode 17, and the base bump electrode 19 with cream solder or the like, wire bonding is unnecessary, and problems associated with wire bonding can be avoided. Similarly, if you use components such as diodes, FETs, thyristors, resistors, and capacitors with all electrodes on one main surface side,
Inexpensive, small and thin resin-encapsulated semiconductor devices that do not require wire bonding, and electronic circuit devices such as power supplies can be mass-produced.

Note that each scribe line 1 C on the back surface of the electrically insulating substrate 1 is not necessarily a single conductive pattern 1 A
It is not necessary to form the scribe line so as to enclose a plurality of conductive patterns 1A.

Further, as the electric insulating substrate, a multilayer substrate in which a desired circuit pattern and a conductive pattern are formed in advance can be used, and wedges and holes for improving the adhesion of the sealing resin are formed on the electric insulating substrate. Those that have been applied are also effective.

[0062]

As described above, according to the present invention, an inexpensive surface-mount type resin-encapsulated semiconductor device which is extremely small, thin, and lightweight, and does not require deburring of encapsulation resin, or a small power supply. Such a surface-mount type resin-sealed electronic circuit device can be easily mass-produced with simple and inexpensive equipment, and the practical effect is extremely large.

[Brief description of the drawings]

FIG. 1 is a diagram showing one embodiment of the present invention.

FIG. 2 is a diagram for explaining an embodiment of the present invention.

FIG. 3 is a diagram showing one embodiment of the present invention.

FIG. 4 is a diagram for explaining an embodiment of the present invention.

FIG. 5 is a diagram showing one embodiment of the present invention.

FIG. 6 is a diagram showing one embodiment of the present invention.

FIG. 7 is a diagram showing an embodiment of the present invention.

FIG. 8 is a diagram showing one embodiment of the present invention.

FIG. 9 is a diagram showing an example of a semiconductor device used in the present invention.

FIG. 10 is a diagram showing a conventional example.

FIG. 11 is a diagram showing a conventional example.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Electrically insulating substrate 1A ... Conductive pattern 1B ... Electrode pattern (external electrode) 1C ... Scribe line 2 ... Semiconductor element 3 ... Solder layer 4 ... Metal wire 5 ... Seal Stopping resin 6 ... Upper mold member 7 ... Lower mold member 8 ... Holding mold member 10 ... Semiconductor substrate 11 ... Epitaxial layer 12 ...
Emitter region 13: Base region

 ────────────────────────────────────────────────── ─── Continuing from the front page (72) Inventor Haruo Ninomiya 1-18-1 Takada, Toshima-ku, Tokyo Origin Electric Company Co., Ltd. Examiner Takaharu Hibino (56) References JP 50-152665 (JP, A JP-A-2-70498 (JP, A) JP-A-2-119246 (JP, A) JP-A-58-56458 (JP, A) JP-A-64-14991 (JP, A)

Claims (11)

(57) [Claims] 1. A semiconductor device comprising at least one semiconductor element fixed to a predetermined conductive pattern formed on a first main surface of an electrically insulating substrate and sealed with a sealing resin. The non-conductive substrate has external electrodes of an electrode pattern connected to the predetermined conductive pattern through via holes on a second main surface opposite to the first main surface. A surface mount type having a flat upper surface having a size similar to an area, and having a divided side wall surface having a thickness of 2 mm or less between a peripheral edge of the electrically insulating substrate and the upper surface. Semiconductor device. 2. An electrode having a plurality of predetermined conductive patterns on a first main surface and connected to the predetermined conductive pattern through via holes in a second main surface opposite to the first main surface. An electrically insulating substrate having a pattern of external electrodes and having a plurality of scribe lines formed on the second main surface so as not to cover the predetermined conductive pattern and the electrode pattern; One or more semiconductor elements, a resin that is continuously sealed over the entire surface of the electrically insulating substrate on which the conductive pattern is formed, and has a thickness of 2 mm or less at a location corresponding to the scribe line. A semiconductor device comprising a limited sealing resin. 3. The semiconductor device according to claim 2, wherein a groove having a predetermined depth is provided at a position of the sealing resin corresponding to the scribe line. 4. The electronic circuit device according to claim 1, wherein another circuit component other than the semiconductor element is electrically connected to the conductive pattern. 5. A plurality of predetermined scribe lines are provided on a first main surface, and a plurality of scribes are provided on a second main surface opposite to the first main surface so as not to cover the predetermined conductive patterns. After providing one or more semiconductor elements on each of the predetermined conductive patterns, a portion of the electrical insulating substrate on which the conductive patterns are formed is continuously formed over the entire surface. Then, a groove is formed so that the thickness of the sealing resin at a location corresponding to the scribe line is 2 mm or less, and an external force is applied after the sealing resin is cured. A method of manufacturing a semiconductor device, wherein the electrical insulating substrate and the sealing resin are divided along the scribe line to obtain individual semiconductor devices. 6. A plurality of predetermined conductive patterns are provided on a first main surface, and a plurality of scribes are provided on a second main surface opposite to the first main surface so as not to cover the predetermined conductive patterns. After providing one or more semiconductor elements on each of the predetermined conductive patterns, a portion of the electrical insulating substrate on which the conductive patterns are formed is flattened over the entire surface. And sealing the sealing resin, applying an external force during the curing of the sealing resin to divide the electric insulating substrate and the sealing resin along the scribe line to separate individual semiconductor devices. A method for manufacturing a semiconductor device, comprising: 7. The sealing according to claim 6, wherein the portion of the electrically insulating substrate on which the conductive pattern is formed is sealed with a sealing resin so as to be continuous over the entire surface, and then the portion corresponding to the scribe line is sealed. A method for manufacturing a semiconductor device, comprising: forming a groove having a predetermined depth in a resin. 8. The method of manufacturing a semiconductor device according to claim 6, wherein the sealing resin is divided in a state where the sealing resin is semi-cured at a temperature of 80% or less of a thermal deformation temperature at the time of complete curing. Method. 9. The method of manufacturing a semiconductor device according to claim 6, wherein the semiconductor device is divided into individual semiconductor devices and then further heated and cured. 10. A plurality of predetermined conductive patterns are provided on a first main surface, and a plurality of scribes are provided on a second main surface opposite to the first main surface so as not to cover the predetermined conductive patterns. An electrically insulating substrate on which lines are formed, and after fixing at least one semiconductor element on each of the predetermined conductive patterns, the active energy is formed over the entire surface of the electrically insulating substrate on which the conductive patterns are formed. A line-curing resin is supplied and covered, and a transparent mold member having a plurality of ridges having a predetermined height is provided thereon, and the ridge is formed at a position of the active energy ray-curable resin corresponding to the scribe line. By forming the grooves along the scribe lines and flattening the surface, and then irradiating active energy rays through the mold member, A method of manufacturing a semiconductor device, further comprising curing an active energy ray-curable resin and dividing the resin along the scribe lines. 11. The method for manufacturing an electronic circuit device according to claim 5, wherein another circuit component in addition to the semiconductor element is electrically connected to the conductive pattern. .