JP2586885B2 - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor deviceInfo
- Publication number
- JP2586885B2 JP2586885B2 JP7188995A JP18899595A JP2586885B2 JP 2586885 B2 JP2586885 B2 JP 2586885B2 JP 7188995 A JP7188995 A JP 7188995A JP 18899595 A JP18899595 A JP 18899595A JP 2586885 B2 JP2586885 B2 JP 2586885B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- metal
- barrier film
- boron
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、特に、電極取り出
し部において、半導体の拡散層と金属の間の相互拡散を
防止する膜の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a film for preventing interdiffusion between a diffusion layer of a semiconductor and a metal at an electrode extraction portion.
【０００２】[0002]
【従来の技術】一般に半導体装置内には、シリコンと金
属、または金属と金属の接触箇所が多く存在する。該金
属接触が高温プロセスにさらされると、シリコンと金
属、または金属と金属間の相互拡散がおこる。これを防
ぐために種々の拡散防止膜が開発、検討されている。そ
の中で最も有望と考えられているものにＴｉＮ膜があ
る。2. Description of the Related Art Generally, there are many contact points between silicon and metal or between metal and metal in a semiconductor device. When the metal contacts are subjected to high temperature processes, interdiffusion between silicon and metal or metal to metal occurs. To prevent this, various diffusion preventing films have been developed and studied. Among them, a TiN film is considered to be the most promising.
【０００３】このＴｉＮ膜をシリコン拡散層とＡｌ（ア
ルミニウム）膜の相互拡散防止膜に適用した場合につい
て述べる。図２（ａ）に示すように、Ｐ型シリコン基板
１において、接合深さ０．２０μｍのＮ型拡散領域２上
の一部にＴｉＮ膜３を１０００オングストロ−ム堆積
し、該ＴｉＮ膜３上にＡｌ膜４を１μｍ形成した。A case where this TiN film is applied to a mutual diffusion preventing film of a silicon diffusion layer and an Al (aluminum) film will be described. As shown in FIG. 2A, on the P-type silicon substrate 1, a 1000 .ANG. TiN film 3 is deposited on a part of the N-type diffusion region 2 having a junction depth of 0.20 .mu.m. An Al film 4 was formed to a thickness of 1 μm.
【０００４】上記ＴｉＮ膜３は、Ｔｉタ−ゲットを用い
てＡｒ／Ｎ2 混合プラズマ（Ｎ2 ：６０％）で化成スパ
ッタリング法により形成した。なお、化成スパッタリン
グ法とは、化学反応（ここではＴｉとＮの化学反応）を
利用したスパッタリング法のことである。上記Ａｌ膜
４、ＴｉＮ膜３をパタ−ニングしてダイオ−ドを形成
し、接合リ−ク電流を測定した。なお、７は、絶縁膜で
ある。The TiN film 3 is formed by chemical conversion sputtering using a Ti target and Ar / N 2 mixed plasma (N 2 : 60%). The chemical sputtering method is a sputtering method utilizing a chemical reaction (here, a chemical reaction between Ti and N). The Al film 4 and the TiN film 3 were patterned to form a diode, and the junction leak current was measured. Reference numeral 7 denotes an insulating film.
【０００５】[0005]
【発明が解決しようとする課題】上記測定において、５
００℃で６０分間の熱処理を行ったところ、リ−ク電流
に異常なものが測定された。不良箇所を詳細に観察した
結果、拡散層２に微小なアロイスパイクが発見され、該
アロイスパイクによって接合が破壊されていることが判
明した。In the above measurement, 5
When heat treatment was performed at 00 ° C. for 60 minutes, an abnormal leak current was measured. As a result of observing the defective portion in detail, it was found that a small alloy spike was found in the diffusion layer 2 and the junction was broken by the alloy spike.
【０００６】上記アロイスパイクは、ＴｉＮ膜３の一部
が何らかの理由でバリア性を失い、局所的にＡｌ−Ｓｉ
の相互拡散が発生したことを意味している。この原因を
図２（ｂ）で説明する。In the alloy spike, a part of the TiN film 3 loses the barrier property for some reason and the Al-Si
Means that mutual diffusion has occurred. This cause will be described with reference to FIG.
【０００７】ＴｉＮ膜３中に未反応Ｔｉ５が若干存在し
ており、該未反応Ｔｉが熱処理によってＴｉＮ膜３の粒
界等に集合し、該集合した未反応Ｔｉ５を介してＡｌ−
Ｓｉ拡散が起こり、アロイスパイク６が形成され、接合
リ−クが発生したものと考えられる。本発明は、相互拡
散防止膜中の未反応物質を他の物質で不活性にし、金属
−半導体または金属相互の拡散を抑制しようとすること
を目的とする。[0007] Some unreacted Ti5 is present in the TiN film 3, and the unreacted Ti is aggregated at the grain boundaries of the TiN film 3 by heat treatment, and Al—
It is considered that Si diffusion occurred, alloy spikes 6 were formed, and a junction leak occurred. SUMMARY OF THE INVENTION It is an object of the present invention to make unreacted substances in a mutual diffusion preventing film inactive with another substance and to suppress metal-semiconductor or metal diffusion.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するた
め、本発明の半導体装置の製造方法は、半導体もしくは
金属と金属との間の相互拡散防止用のバリア膜として高
融点金属窒化膜を用いる場合に、前記バリア膜をスパッ
タ法により形成すると共に、前記バリア膜を形成する物
質に、ボロンもしくは炭素を添加しかつ加熱処理を施す
ことにより、前記ボロンもしくは炭素を前記高融点金属
窒化膜中の未反応物質と化合させ不活性物質を形成する
というものである。In order to achieve the above object, a method of manufacturing a semiconductor device according to the present invention uses a refractory metal nitride film as a barrier film for preventing interdiffusion between a semiconductor or a metal. In this case, the barrier film is formed by a sputtering method, and the material for forming the barrier film is doped with boron or carbon and subjected to a heat treatment so that the boron or carbon is contained in the refractory metal nitride film. It is combined with unreacted substances to form inert substances.
【０００９】本発明の半導体装置の製造方法は、半導体
もしくは金属と金属との間の相互拡散防止用のバリア膜
として高融点金属窒化膜を用いる場合に、前記バリア膜
をスパッタ法により所定温度で形成すると同時に、前記
バリア膜を形成する物質にボロンもしくは炭素を添加し
かつ前記ボロンもしくは炭素を前記高融点金属窒化膜中
の未反応物質と化合させ不活性物質を形成するというも
のである。これにより、バリア膜のバリア性を完全化す
ることができると共に、良導電性も保持することができ
る。According to the method of manufacturing a semiconductor device of the present invention, when a high melting point metal nitride film is used as a barrier film for preventing mutual diffusion between a semiconductor or a metal, the barrier film is formed at a predetermined temperature by sputtering. Simultaneously with the formation, boron or carbon is added to the material forming the barrier film, and the boron or carbon is combined with the unreacted material in the high melting point metal nitride film to form an inert material. Thereby, the barrier properties of the barrier film can be perfected, and good conductivity can be maintained.
【００１０】[0010]
【発明の実施の形態】以下、図面を参照しながら、本発
明の実施の形態について詳細に説明する。図１（ａ）に
示すように、Ｐ型シリコン基板１０に、０．２μｍの接
合深さをもったＮ型拡散層１１が形成されており、この
拡散層１１上に、ボロンを０．３％含有したチタンタ−
ゲットを用いて、Ａｒ／Ｎ2 混合プラズマ（Ｎ2 ：６０
％）による化成スパッタ法で、ＴｉＮ膜１２を１０００
オングストロ−ム形成した。なお、化成スパッタ法と
は、化学反応（ここではＴｉとＮの化学反応）を利用し
たスパッタ法のことである。その後、Ａｌ膜１３を１μ
ｍ堆積した。なお、１７は、絶縁膜である。Embodiments of the present invention will be described below in detail with reference to the drawings. As shown in FIG. 1A, an N-type diffusion layer 11 having a junction depth of 0.2 μm is formed on a P-type silicon substrate 10. % Titanium titanium
Ar / N 2 mixed plasma (N 2 : 60)
%), The TiN film 12 is
Angstrom was formed. Note that the chemical conversion sputtering method is a sputtering method utilizing a chemical reaction (here, a chemical reaction between Ti and N). Thereafter, the Al film 13 is
m. Reference numeral 17 denotes an insulating film.
【００１１】図１（ａ）のＴｉＮ膜１２には、前述した
ように未反応Ｔｉ１４が存在するが、同時にボロン１５
も混在している。このようなＴｉＮ膜を熱処理すると、
未反応Ｔｉはボロンと反応して、図１（ｂ）のように、
ＴｉＢ2 １６が形成される。このため、ＴｉＮ膜１２の
バリア性は著しく向上し、５００℃で６０分の熱処理を
行っても、接合リ−クの発生は全く測定されなかった。As described above, unreacted Ti 14 exists in the TiN film 12 of FIG.
Are also mixed. When such a TiN film is heat-treated,
Unreacted Ti reacts with boron, as shown in FIG.
TiB 2 16 is formed. For this reason, the barrier property of the TiN film 12 was remarkably improved, and even if the heat treatment was performed at 500 ° C. for 60 minutes, the occurrence of the junction leak was not measured at all.
【００１２】なお、上記ＴｉＢ2 の反応は、３００℃前
後で進行するから、ＴｉＮ膜形成時に、基板温度を３０
０〜４００℃に保持し、ＴｉＮ膜堆積と同時にＴｉＢ2
形成を図ってもよい。また、ＴｉＮ膜堆積後、熱処理を
行い、しかる後にＡｌ膜の堆積を行ってもよい。Since the reaction of TiB 2 proceeds at about 300 ° C., when forming the TiN film, the substrate temperature is reduced to 30 ° C.
0 to 400 ° C., and TiB 2
It may be formed. After the TiN film is deposited, a heat treatment may be performed, and thereafter, an Al film may be deposited.
【００１３】また、ボロンは、チタンタ−ゲット中にＴ
ｉＢ2 の状態で含有されていても、またはこれ以外のボ
ロン化合物の状態で含有されていても同様の効果があ
り、何らさしつかえない。また、ボロンを含まないチタ
ンと、ボロンまたはボロンを含む化合物（例えば、Ｔｉ
Ｂ2 ，ＢＮ）との組み合わせで作られたタ−ゲットを用
いてもよい。[0013] Also, boron is added to the titanium target in the T target.
Even if it is contained in the state of iB 2 or in the state of a boron compound other than this, the same effect is obtained and there is no problem at all. Further, titanium containing no boron and boron or a compound containing boron (for example, Ti
B 2 , BN) may be used.
【００１４】次に、本発明の他の実施の形態を説明す
る。即ち、ボロンを含まないチタンタ−ゲットを用いて
ＴｉＮ膜を堆積後、イオン注入法でボロンをＴｉＮ膜に
０．１％の濃度まで注入した。イオン注入後、４５０℃
で熱処理後、Ａｌ膜の堆積を行った。しかして、本実施
例でも５００℃の熱処理を行っても、接合リ−クの発生
は全く測定されなかった。Next, another embodiment of the present invention will be described. That is, after depositing a TiN film using a titanium target containing no boron, boron was implanted into the TiN film to a concentration of 0.1% by an ion implantation method. After ion implantation, 450 ° C
After the heat treatment, an Al film was deposited. Thus, even in the present embodiment, even when the heat treatment was performed at 500 ° C., the occurrence of the bonding leak was not measured at all.
【００１５】さらに、本発明の異なる実施の形態を説明
する。即ち、ボロンを含まないチタンタ−ゲットを用い
てＡｒ／Ｎ2 混合プラズマ中にＢ2 Ｈ2 ガスを０．５％
混入させて、ＴｉＮ膜の化成スパッタを行った。ＴｉＮ
膜中にボロンが含有され、所望の特性は達成された。Further, different embodiments of the present invention will be described. That is, using a titanium target containing no boron, the B 2 H 2 gas is added to the Ar / N 2 mixed plasma by 0.5%.
The TiN film was subjected to chemical sputtering. TiN
Boron was included in the film and the desired properties were achieved.
【００１６】なお、前記実施例では、シリコン拡散層と
アルミニウム膜の間のバリア膜として評価したものであ
るが、本発明のＴｉＮ膜は、他のメタルシステム、例え
ば、ＴｉＳｉ2 とＡｌ，ＴｉＳｉ2 とＷ（タングステ
ン）といった金属相互の拡散防止膜にも有効であり、後
者のシステムでは、９００℃の高温でも十分なバリア性
があった。In the above embodiment, the evaluation was made as a barrier film between the silicon diffusion layer and the aluminum film. However, the TiN film of the present invention can be used for other metal systems such as TiSi 2 and Al, TiSi 2. And W (tungsten) are also effective for preventing diffusion between metals, and the latter system has a sufficient barrier property even at a high temperature of 900 ° C.
【００１７】この他にも、ＧａＡｓなどのシリコン以外
の半導体基板と金属の拡散防止膜としても用いることが
できる。上述の各実施の形態では、ボロンで未反応Ｔｉ
をＴｉＢ2 として不活性化したが、カ−ボンでＴｉＣに
しても同様の効果が期待される。In addition, it can be used as a diffusion preventing film for a semiconductor substrate other than silicon such as GaAs and metal. In each of the above embodiments, the unreacted Ti
Was inactivated as TiB 2 , but the same effect can be expected by using TiC with carbon.
【００１８】また、高融点金属としてＴｉを用いたが、
Ｔｉ以外のＨｆやＷでも同様の現象が発生しており、本
発明は、Ｔｉ以外の高融点金属でも有効である。これら
高融点金属による高融点金属窒化膜は、ボロンや炭素を
含む場合には、酸素を含む場合とは異なり良導電性を有
するものである。Although Ti was used as the high melting point metal,
Similar phenomena occur in Hf and W other than Ti, and the present invention is also effective for high melting point metals other than Ti. The refractory metal nitride film made of such a refractory metal has good conductivity when containing boron or carbon, unlike when containing oxygen.
【００１９】[0019]
【発明の効果】以上、説明したように、本発明の半導体
装置の製造方法によれば、次のような効果を奏する。化
成スパッタ法により、バリア膜である高融点金属窒化膜
を形成する場合に、高融点金属窒化膜中の未反応物質
（高融点金属）をボロンまたはカ−ボンにより不活性化
している（例えば、ＴｉＮ2 やＴｉＣにすること）た
め、バリア膜のバリア性を完全化し、該バリア膜の良導
電性も保持することができる。As described above, according to the method of manufacturing a semiconductor device of the present invention, the following effects can be obtained. When a high melting point metal nitride film as a barrier film is formed by chemical conversion sputtering, unreacted substances (high melting point metal) in the high melting point metal nitride film are inactivated by boron or carbon (for example, Since TiN 2 or TiC is used, the barrier properties of the barrier film can be perfected, and the good conductivity of the barrier film can be maintained.
【図１】本発明の実施の形態に関わる半導体装置の製造
方法を示す断面図。FIG. 1 is a sectional view showing a method for manufacturing a semiconductor device according to an embodiment of the present invention.
【図２】従来の半導体装置の製造方法を示す断面図。FIG. 2 is a cross-sectional view illustrating a conventional method for manufacturing a semiconductor device.
１０ ：Ｐ型シリコン基板、 １１ ：Ｎ型拡散層、 １２ ：ＴｉＮ膜、 １３ ：Ａｌ膜、 １４ ：ＴｉＢ2 。10: P-type silicon substrate, 11: N-type diffusion layer, 12: TiN film, 13: Al film, 14: TiB 2.
Claims (5)
拡散防止用のバリア膜として高融点金属窒化膜を用いる
半導体装置の製造方法において、前記バリア膜をスパッ
タ法により形成した後に、前記バリア膜を形成する物質
に、ボロンもしくは炭素を添加すると同時に加熱処理を
施すことにより、前記ボロンもしくは炭素を前記高融点
金属窒化膜中の未反応物質と化合させ不活性物質を形成
することを特徴とする半導体装置の製造方法。In a method of manufacturing a semiconductor device using a refractory metal nitride film as a barrier film for preventing mutual diffusion between a semiconductor or a metal, the barrier film is formed after forming the barrier film by a sputtering method. By adding boron or carbon to the substance forming, and performing a heat treatment at the same time , the boron or carbon is combined with the unreacted substance in the high melting point metal nitride film to form an inert substance. A method for manufacturing a semiconductor device.
拡散防止用のバリア膜として高融点金属窒化膜を用いる
半導体装置の製造方法において、前記バリア膜をスパッ
タ法により所定温度で形成すると同時に、前記バリア膜
を形成する物質にボロンもしくは炭素を添加しかつ前記
ボロンもしくは炭素を前記高融点金属窒化膜中の未反応
物質と化合させ不活性物質を形成することを特徴とする
半導体装置の製造方法。2. A method for manufacturing a semiconductor device using a refractory metal nitride film as a barrier film for preventing mutual diffusion between a semiconductor or a metal and a metal, wherein the barrier film is formed at a predetermined temperature by a sputtering method. A method of manufacturing a semiconductor device, comprising adding boron or carbon to a material forming the barrier film and combining the boron or carbon with an unreacted material in the refractory metal nitride film to form an inert material. .
徴とする請求項１または２に記載の半導体装置の製造方
法。3. The method according to claim 1, wherein the refractory metal is titanium.
ニウムもしくはアルミニウム合金であることを特徴とす
る請求項１または２に記載の半導体装置の製造方法。4. The method according to claim 1, wherein the metal on the refractory metal nitride film is aluminum or an aluminum alloy.
反応を利用したスパッタ法により形成されることを特徴
とする請求項１または２に記載の半導体装置の製造方
法。5. The method according to claim 1, wherein the barrier film is formed by a sputtering method utilizing a chemical reaction between a high melting point metal and nitrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7188995A JP2586885B2 (en) | 1995-07-25 | 1995-07-25 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7188995A JP2586885B2 (en) | 1995-07-25 | 1995-07-25 | Method for manufacturing semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61277956A Division JPH081950B2 (en) | 1986-11-21 | 1986-11-21 | Method for manufacturing semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8209467A Division JP2675775B2 (en) | 1996-08-08 | 1996-08-08 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08172060A JPH08172060A (en) | 1996-07-02 |
| JP2586885B2 true JP2586885B2 (en) | 1997-03-05 |
Family
ID=16233537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7188995A Expired - Lifetime JP2586885B2 (en) | 1995-07-25 | 1995-07-25 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2586885B2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3231544B2 (en) * | 1994-06-22 | 2001-11-26 | 株式会社リコー | Method of manufacturing inkjet head |
-
1995
- 1995-07-25 JP JP7188995A patent/JP2586885B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08172060A (en) | 1996-07-02 |
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