JP2556637B2 - マグネトロン陰極による基板への成膜装置 - Google Patents

マグネトロン陰極による基板への成膜装置

Info

Publication number
JP2556637B2
JP2556637B2 JP3318879A JP31887991A JP2556637B2 JP 2556637 B2 JP2556637 B2 JP 2556637B2 JP 3318879 A JP3318879 A JP 3318879A JP 31887991 A JP31887991 A JP 31887991A JP 2556637 B2 JP2556637 B2 JP 2556637B2
Authority
JP
Japan
Prior art keywords
magnetic
cathode
substrate
magnetron
poles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3318879A
Other languages
English (en)
Japanese (ja)
Other versions
JPH04289167A (ja
Inventor
ホーフマン ディーター
シュスラー ハンス
フォイアーシュタイン アルベルト
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BARUTSUAASU UNTO RAIBORUTO DOICHURANTO HOORUDEINGU AG
Original Assignee
BARUTSUAASU UNTO RAIBORUTO DOICHURANTO HOORUDEINGU AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=6419475&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP2556637(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by BARUTSUAASU UNTO RAIBORUTO DOICHURANTO HOORUDEINGU AG filed Critical BARUTSUAASU UNTO RAIBORUTO DOICHURANTO HOORUDEINGU AG
Publication of JPH04289167A publication Critical patent/JPH04289167A/ja
Application granted granted Critical
Publication of JP2556637B2 publication Critical patent/JP2556637B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP3318879A 1990-12-03 1991-12-03 マグネトロン陰極による基板への成膜装置 Expired - Lifetime JP2556637B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4038497.7 1990-12-03
DE4038497A DE4038497C1 (enExample) 1990-12-03 1990-12-03

Publications (2)

Publication Number Publication Date
JPH04289167A JPH04289167A (ja) 1992-10-14
JP2556637B2 true JP2556637B2 (ja) 1996-11-20

Family

ID=6419475

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3318879A Expired - Lifetime JP2556637B2 (ja) 1990-12-03 1991-12-03 マグネトロン陰極による基板への成膜装置

Country Status (4)

Country Link
US (1) US5196105A (enExample)
EP (1) EP0489239B1 (enExample)
JP (1) JP2556637B2 (enExample)
DE (2) DE4038497C1 (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9006073D0 (en) * 1990-03-17 1990-05-16 D G Teer Coating Services Limi Magnetron sputter ion plating
US5458759A (en) * 1991-08-02 1995-10-17 Anelva Corporation Magnetron sputtering cathode apparatus
KR950000906B1 (ko) * 1991-08-02 1995-02-03 니찌덴 아넬바 가부시기가이샤 스퍼터링장치
FR2689143B1 (fr) * 1992-03-31 1994-05-13 Commissariat A Energie Atomique Dispositif de pulverisation cathodique utilisant un plasma engendre par des micro-ondes.
US5346600A (en) * 1992-08-14 1994-09-13 Hughes Aircraft Company Plasma-enhanced magnetron-sputtered deposition of materials
DE4230291C2 (de) * 1992-09-10 1999-11-04 Leybold Ag Mikrowellenunterstützte Zerstäubungsanordnung
US5744011A (en) * 1993-03-18 1998-04-28 Kabushiki Kaisha Toshiba Sputtering apparatus and sputtering method
TW271490B (enExample) * 1993-05-05 1996-03-01 Varian Associates
US5744017A (en) * 1993-12-17 1998-04-28 Kabushiki Kaisha Kobe Seiko Sho Vacuum arc deposition apparatus
US5798029A (en) * 1994-04-22 1998-08-25 Applied Materials, Inc. Target for sputtering equipment
EP0691419A1 (en) * 1994-07-05 1996-01-10 General Electric Company A process and apparatus for forming multi-layer optical films
DE4443740B4 (de) * 1994-12-08 2005-09-15 W. Blösch AG Vorrichtung zum Beschichten von Substraten
US5597459A (en) * 1995-02-08 1997-01-28 Nobler Technologies, Inc. Magnetron cathode sputtering method and apparatus
JP3814764B2 (ja) * 1995-02-23 2006-08-30 東京エレクトロン株式会社 スパッタ処理方式
US6224724B1 (en) 1995-02-23 2001-05-01 Tokyo Electron Limited Physical vapor processing of a surface with non-uniformity compensation
DE19617155B4 (de) * 1995-06-28 2007-07-26 Oc Oerlikon Balzers Ag Sputterbeschichtungsstation, Verfahren zur Herstellung sputterbeschichteter Werkstücke und Verwendung der Station oder des Verfahrens zur Beschichtung scheibenförmiger Substrate
US6423419B1 (en) 1995-07-19 2002-07-23 Teer Coatings Limited Molybdenum-sulphur coatings
GB9514773D0 (en) * 1995-07-19 1995-09-20 Teer Coatings Ltd Methods for improving the sputter deposition of metal-sulphur coatings e.g.molybdenum disulphide(MoS2) coatings
GB9700158D0 (en) * 1997-01-07 1997-02-26 Gencoa Limited Versatile coating deposition system
US6012830A (en) * 1998-06-23 2000-01-11 Valeo Sylvania L.L.C. Light shield for a vehicle headlamp
GB2340845B (en) * 1998-08-19 2001-01-31 Kobe Steel Ltd Magnetron sputtering apparatus
US6497803B2 (en) 2000-05-31 2002-12-24 Isoflux, Inc. Unbalanced plasma generating apparatus having cylindrical symmetry
CN100437886C (zh) * 2000-07-27 2008-11-26 特利康控股有限公司 磁控管溅射
JP4219566B2 (ja) * 2001-03-30 2009-02-04 株式会社神戸製鋼所 スパッタ装置
WO2002092873A2 (en) * 2001-04-30 2002-11-21 Isoflux, Inc. Relationship to other applications and patents
JP4563629B2 (ja) * 2001-11-19 2010-10-13 株式会社エフ・ティ・エスコーポレーション 対向ターゲット式スパッタ装置
US20040149575A1 (en) * 2002-04-29 2004-08-05 Isoflux, Inc. System for unbalanced magnetron sputtering with AC power
SE0303136D0 (sv) * 2003-11-24 2003-11-24 Chemfilt R & D Ab Method and apparatus for reactive soilid-gas-plasma deposition
US20060081467A1 (en) * 2004-10-15 2006-04-20 Makoto Nagashima Systems and methods for magnetron deposition
DE502005009129D1 (de) * 2005-04-12 2010-04-15 Hauzer Techno Coating B V Vorrichtung zur Plasmabehandlung und/oder zur Beschichtung von Werkstücken
DE102006021565A1 (de) * 2005-12-20 2007-06-28 Itg Induktionsanlagen Gmbh Verfahren und Vorrichtung zum Erzeugen eines Magnetfeldsystems
US8454810B2 (en) 2006-07-14 2013-06-04 4D-S Pty Ltd. Dual hexagonal shaped plasma source
US20080011603A1 (en) * 2006-07-14 2008-01-17 Makoto Nagashima Ultra high vacuum deposition of PCMO material
US8308915B2 (en) * 2006-09-14 2012-11-13 4D-S Pty Ltd. Systems and methods for magnetron deposition
WO2008049634A1 (en) * 2006-10-26 2008-05-02 Hauzer Techno Coating Bv Dual magnetron sputtering power supply and magnetron sputtering apparatus
WO2009052874A1 (en) * 2007-10-26 2009-04-30 Hauzer Techno Coating Bv Dual magnetron sputtering power supply and magnetron sputtering apparatus
US8741888B2 (en) * 2010-11-09 2014-06-03 Carl A. Forest Sleep aid composition and method
CN104704603B (zh) * 2012-07-02 2017-07-28 应用材料公司 用以涂布溅镀材料层于基板上的装置及沉积系统
EP2811507B1 (en) * 2013-06-07 2020-02-19 Soleras Advanced Coatings bvba Magnetic configuration for a magnetron sputter deposition system
CN108396295B (zh) * 2018-02-26 2023-06-27 温州职业技术学院 曲面磁控溅射阴极、闭合磁场涂层磁控溅射设备及其应用方法
DE102018213534A1 (de) * 2018-08-10 2020-02-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Herstellung von Schichten mit verbesserter Uniformität bei Beschichtungsanlagen mit horizontal rotierender Substratführung

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58141433A (ja) * 1982-02-16 1983-08-22 Teijin Ltd 磁気記録媒体とその製造方法
JPS60106966A (ja) * 1983-11-12 1985-06-12 Konishiroku Photo Ind Co Ltd 対向タ−ゲツト式スパツタ装置
ATE47253T1 (de) * 1983-12-05 1989-10-15 Leybold Ag Magnetronkatode zum zerstaeuben ferromagnetischer targets.
DE3611492A1 (de) * 1986-04-05 1987-10-22 Leybold Heraeus Gmbh & Co Kg Verfahren und vorrichtung zum beschichten von werkzeugen fuer die zerspanungs- und umformtechnik mit hartstoffschichten
JPS63103067A (ja) * 1986-10-20 1988-05-07 Fujitsu Ltd マグネトロンスパツタ装置
JPS63277756A (ja) * 1987-05-09 1988-11-15 Canon Inc 対向タ−ゲット式スパッタ装置
JP2643149B2 (ja) * 1987-06-03 1997-08-20 株式会社ブリヂストン 表面処理方法
US4931158A (en) * 1988-03-22 1990-06-05 The Regents Of The Univ. Of Calif. Deposition of films onto large area substrates using modified reactive magnetron sputtering
JPH01294859A (ja) * 1988-05-23 1989-11-28 Hitachi Ltd 対向ターゲツト式スパツタリング装置
JPH02217467A (ja) * 1989-02-17 1990-08-30 Pioneer Electron Corp 対向ターゲット型スパッタリング装置
JPH02240261A (ja) * 1989-03-14 1990-09-25 Sumitomo Metal Ind Ltd スパッタリング装置
DE4009151A1 (de) * 1990-03-22 1991-09-26 Leybold Ag Vorrichtung zum beschichten von substraten durch katodenzerstaeubung

Also Published As

Publication number Publication date
US5196105A (en) 1993-03-23
DE59101796D1 (de) 1994-07-07
JPH04289167A (ja) 1992-10-14
EP0489239A1 (de) 1992-06-10
EP0489239B1 (de) 1994-06-01
DE4038497C1 (enExample) 1992-02-20

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