JP2555086B2 - Surface treatment equipment - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a surface treatment technique, and in particular, it is applied to a surface cleaning treatment of a semiconductor wafer with a chemical solution or the like, which is carried out in a wafer treatment process in the production of semiconductor devices. And effective technology.

[Conventional technology]

For example, in a wafer processing process in the manufacture of semiconductor devices, prior to the formation of a predetermined thin film, the natural oxide film formed on the surface of the semiconductor wafer and contaminants such as oil and fat adhered to the surface are removed during the process. In some cases, the following cleaning process is performed in order to perform cleaning.

That is, hydrogen fluoride, ammonium hydroxide, hydrochloric acid,
A chemical tank that stores a chemically active chemical solution that contains a mixture of hydrogen peroxide and pure water, a pure water tank that stores pure water, and spin drying by centrifugal force or replacement with a volatile organic solvent vapor A drying tank will be provided to perform steam drying, etc.

Then, the semiconductor wafer is sequentially moved between these tanks, and the semiconductor wafer is immersed in a chemical solution to remove contaminants such as fats and oils adhering to the surface and natural oxide film, and the chemical cleaning. A rinsing process in which the chemicals adhering to the surface of the semiconductor wafer during the process are washed away with pure water,
The surface of the semiconductor wafer is brought into a clean and dry state by individually performing a drying process of removing the water adhering to the surface of the semiconductor wafer by the water washing process in each of the tanks.

Regarding the cleaning treatment of the surface of such a semiconductor wafer, for example, the technique disclosed in Japanese Patent Laid-Open No. 57-89664 is known.

[Problems to be solved by the invention]

However, in the surface cleaning process of the above-mentioned method, when it is transported between the processing tanks during the process,
It is inevitable that the surface of a semiconductor wafer with chemicals or pure water attached to it will come into contact with the outside air, so dust and contaminants floating in the outside air will adhere to the surface of the semiconductor wafer. The semiconductor wafer that has been taken in and was thoroughly cleaned is re-contaminated, or the surface of the hydrophobic semiconductor wafer is in a natural dry state during the transportation from the water washing process to the drying process and is dissolved in the droplets on the surface. There is a problem such as generation of harmful watermarks that are formed by spotting residual contaminants in a concentrated state.

Further, in the conventional vapor dryer, a semiconductor wafer is generally carried into the vapor atmosphere formed above the organic solvent stored in the bottom of the tank, so that it is generated by bumping of the heated organic solvent. The splashed droplets adhere to the semiconductor wafer and cause re-contamination, or the organic solvent vapor layer in the tank decreases when the semiconductor wafer with a low temperature is loaded into the tank from the outside. There is also a problem that the upper part of the semiconductor wafer is exposed to the outside air and is likely to be in a harmful natural dry state.

An object of the present invention is to provide a surface treatment technology capable of highly cleaning the surface of an object to be processed by preventing recontamination of the object to be processed and harmful natural drying during the process. Especially.

The above and other objects and novel features of the present invention are as follows.
It will be apparent from the description of this specification and the accompanying drawings.

[Means for solving problems]

The outline of a typical invention among the inventions disclosed in the present application will be briefly described as follows.

That is, a processing chamber that accommodates an object to be processed, a plurality of processing fluid sources that are connected to the processing chamber and that individually supply vapors of processing fluids of different types to the processing chamber, and a plurality of processing fluid sources, respectively. A plurality of kinds of surface treatments, which comprises a filter provided between the treatment chamber and at least one of the vapor of each treatment fluid and the liquid droplets formed by condensation of the vapor is brought into contact with the object to be treated, It is designed to be continuously performed inside the processing chamber.

[Action]

According to the above-mentioned means, it is not necessary to carry the object to be processed out of the processing chamber during the processing of a plurality of types, the contamination due to the object to be contacted with the outside air, the natural drying during the transportation, etc. It is possible to reliably prevent the generation of harmful water marks and the like, and the vapor of the processing fluid supplied into the processing chamber passes through the filter to be supplied to the object to be processed in a highly cleaned state. Therefore, the surface of the object to be treated can be highly cleaned.

[Embodiment 1] FIG. 1 is a partially cutaway perspective view of a surface treatment apparatus according to an embodiment of the present invention, and FIG. 2 is a portion indicated by line II-II in FIG. FIG.

A lid 2 is detachably attached to the upper open end of a fixed cylindrical processing chamber 1 with its axis substantially vertical, and the processing chamber 1 is shut off from the outside and sealed, and at the same time, the transfer jig 3 is attached. It is configured such that a plurality of stored objects 4 such as semiconductor wafers can be loaded into and unloaded from the processing chamber 1.

The inner peripheral portions of the processing chamber 1 and the lid 2 are made of, for example, quartz, SiC (silicon carbide), fluororesin, or another substance having corrosion resistance and hydrophobicity, or coated with the substance.

The outer peripheral portion of the processing chamber 1 is surrounded by a heating body 5 capable of heating the inside of the processing chamber 1 to a desired temperature. Further, the outer peripheral portions of the heating body 5 and the lid body 2 are heat insulating bodies 6. Is covered by.

A discharge pipe 7 is provided at the bottom of the processing chamber 1, and the discharge pipe 7 can be connected to any one of the plurality of discharge pipes 9, 10, 10 and 11 by a switching valve 8. .

At the bottom of the processing chamber 1, a heat exchanger 12 (cooling means) in which a heat medium such as cooling water is circulated is disposed, so that a predetermined substance, which will be described later, supplied to the inside of the processing chamber 1. The vapor and the like are condensed and collected outside through the discharge pipe 7.

Similarly, on the inner surface side of the lid body 2, the heat exchange body 13 (cooling means) is positioned so as to be located above the object to be processed 4 housed inside the processing chamber 1 in a state of being mounted in the processing chamber 1. Is provided.

In this case, a plurality of steam generation tanks 14 are provided outside the processing chamber 1.
(Processing fluid source), Steam generating tank 15 (Processing fluid source), Steam generating tank 16 (Processing fluid source) are provided, and duct 17,
It is connected to the side surface on the upper end side of the processing chamber 1 via the ducts 18 and 19.

A supply / discharge pipe 20 for supplying a chemical liquid A (treatment fluid), a ultrapure water B (treatment fluid), and an organic solvent C (treatment fluid) having a predetermined composition from the outside to the bottoms of the steam generation tanks 14, 15, and 16, respectively. , Supply and discharge pipe 2
1, the supply / discharge pipe 22, and the chemical liquid A, ultrapure water B, and organic solvent C stored at the bottom of the vapor generation tanks 14, 15, 16 are heated to predetermined temperatures, respectively, and chemical liquid vapor a, water vapor b, A block heater 23, a block heater 24, and a block heater 25 that respectively generate the organic solvent vapor c are provided.

The plurality of ducts 17, 18, 19 have steam generation tanks 14, 15, 16
In the direction of the processing chamber 1 from the steam temperature control unit 26, the steam temperature control unit 27, the steam temperature control unit 28, the valve unit 29, the valve unit 30, the valve unit 31.
And a filter 32, a filter 33, and a filter 34, respectively.

The vapor temperature control units 26, 27, 28 are arranged so as to respectively contact the chemical liquid vapor a, the water vapor b, and the organic solvent vapor c flowing inside the ducts 17, 18, 19, and the heat medium flows inside. The heat exchange body 26a, the heat exchange body 27a, the heat exchange body 28a, and the recovery pipes 26b, 27b, 28b communicating with the bottoms of the steam generation tanks 14, 15, 16 are provided.

Then, for example, the valve portion 29, the valve portion 30, the valve portion 31 are closed,
Chemical vapor a, steam from the steam generation tanks 14, 15, 16 to the processing chamber 1
b, When the supply of the organic solvent vapor c is stopped, the temperature of the heat medium flowing through the heat exchangers 26a, 27a, 28a is controlled to a relatively low value, and the insides of the ducts 17, 18, 19 are The flowing chemical liquid vapor a, water vapor b, and organic solvent vapor c are condensed, and the condensate is recovered through the recovery pipes 26b, 27b, 28b, and, for example, the valve portion 29, the valve portion 30, and the valve portion 31 are opened. Steam generation tank 14,15,16
When the chemical solution vapor a, the water vapor b, and the organic solvent vapor c are supplied from the processing chamber 1 to the processing chamber 1, control the temperature of the heat medium flowing through the heat exchangers 26a, 27a, 28a to a relatively high value. Thus, the temperatures of the chemical liquid vapor a, the water vapor b, and the organic solvent vapor c supplied from the vapor generation tanks 14, 15, 16 to the processing chamber 1 are controlled to desired values.

Further, the filter 32 provided in the duct 17 through which the chemical liquid vapor a flows is composed of, for example, a hydrophobic porous membrane such as a fluororesin having a corrosion resistance (for example, a pleated mengren filter manufactured by Nippon Paul Kurabo Industries). Has been done,
The mist generated by the boiling of the chemical liquid A due to the heating in the vapor generation tank 14 and the foreign matters contained in the chemical liquid A are captured by the filter 32, so that only the highly clean or the chemical vapor a is highly treated. The structure is to be supplied to.

Filter 33 provided in duct 18 through which water vapor b generated from ultrapure water B stored in vapor generation tank 15 flows
Is composed of, for example, a porous film made of hydrophobic fluororesin, and the filter 33 captures mist, foreign matter, etc. generated when the ultrapure water B is heated in the steam generation tank 15. By this, highly clean water vapor b
Is supplied to the processing tank 1.

The filter 34 provided in the duct 19 through which the organic solvent vapor c generated from the organic solvent C stored in the vapor generation tank 16 is provided is constituted by, for example, a hydrophilic porous film, and the vapor generation tank 16 is provided. In this case, the filter 34 captures mist, foreign matter, and the like generated when the organic solvent C is heated in the above, whereby highly clean organic solvent vapor c is supplied to the processing tank 1.

Further, in the processing chamber 1, a gas source is provided via a gas supply pipe 35.
36 is connected, and the atmosphere inside the processing chamber 1 is formed by an inert gas 36a such as nitrogen gas or argon gas stored in the gas source 36.

A gas temperature control unit 37 and a filter 38 are provided in the path of the gas supply pipe 35 to control the temperature of the inert gas 36a supplied from the gas source 36 into the processing chamber 1 to a desired value. In addition, the inert gas 36
The structure is such that foreign substances mixed in a are removed.

 The operation of this embodiment will be described below.

First, in each of the plurality of steam generation tanks 14, 15, 16
By heating the chemical liquid A, the ultrapure water B, and the organic solvent C stored in each of the vapor generation tanks 14, 15, 16 by the block heaters 23, 24, 25 provided respectively, the chemical liquid vapor a, Water vapor b and organic solvent vapor c are generated.

At this time, the valve parts 29, 3 provided on the respective ducts 17, 18, 19
0 and 31 are closed, and steam temperature control units 26, 27,
A heat medium having a low temperature is circulated through the heat exchangers 26a, 27a, 28a of 28, and the chemical liquid vapor a and the steam supplied to the ducts 17, 18, 19 are provided.
b, the organic solvent vapor c is condensed and returned to the respective vapor generation tanks 14, 15, 16 via the recovery pipes 26b, 27b, 28b, and the vapor generation tanks 14, 15, 16
The internal pressure of 16 is prevented from rising.

Further, the inside of the processing chamber 1 is filled with an inert gas 36a which is introduced from a gas source 36 via a gas supply pipe 35.

In this state, the lid 2 of the processing chamber 1 is opened, and the objects to be processed 4 such as a plurality of semiconductor wafers housed in the transfer jig 3 are carried into the processing chamber 1 by a transfer mechanism (not shown). The processing chamber 1 is sealed by a lid body 2, and the object to be processed 4 is located inside the processing chamber 1 in an atmosphere of an inert gas 36a.

Next, by opening the valve portion 29 provided in the duct 17 and simultaneously increasing the temperature of the heat medium flowing through the heat exchanger 26a of the vapor temperature control unit 26, and stopping the condensation operation of the chemical vapor a, The chemical liquid vapor a generated from the vapor generation tank 14 is
Immediately, the steam temperature control unit 26, the valve unit 29, and the filter 32
And is made into a highly clean state and flows into the inside of the processing chamber 1.

The chemical vapor a that has flowed into the processing chamber 1 is the object 4 to be processed.
To be condensed by contacting with the heat exchange element 13 disposed above the object 4 to be processed in the processing chamber 1 to be condensed into droplets. On top of.

The object to be processed 4 such as a semiconductor wafer is a heat exchanger.
A natural oxide film formed on the surface of the object 4 to be cleaned by being condensed and dropped on the surface of 13 or contacted with the droplet of the highly clean chemical solution A directly condensed on the surface of the object to be treated 4. Contaminants such as oil and grease are removed and a clean surface is exposed.

The surplus chemical solution vapor a is condensed by the heat exchanger 12 provided at the bottom of the processing chamber 1, and is provided at the bottom of the processing chamber 1 together with the liquid droplets of the chemical solution A that has finished cleaning the object 4 to be processed. It is discharged to the outside through the discharge pipe 7, the switching valve 8, and the discharge pipe 9 and is collected.

After a lapse of a predetermined time, the valve portion 29 of the duct 17 is closed and the supply of the chemical vapor a to the processing chamber 1 is stopped.

Thereafter, the valve portion 30 of the duct 18 is opened, and the vapor temperature control portion 27 is operated in the same procedure as in the case of the chemical liquid vapor a, whereby the vapor b of the ultrapure water B generated from the vapor generation tank 15 is generated. However, as it passes through the filter 33, it flows into the processing chamber 1 in a highly cleaned state.

Then, the water vapor b supplied to the inside of the processing chamber 1 comes into contact with the heat exchanger 13 provided above the object 4 to be processed and the surface of the object 4 to be condensed, and droplets of the ultrapure water B. Then, it is poured onto the object to be processed 4 below, and the chemical liquid or the like remaining on the surface of the object to be processed 4 such as a semiconductor wafer is washed away.

Excessive water vapor b is condensed by the heat exchanger 12 provided at the bottom of the processing chamber 1, and together with the droplets of the ultrapure water A that has undergone the cleaning process including the chemical liquid A and the like, the discharge pipe 7, the switching valve 8, It is discharged to the outside through the discharge pipe 10 and collected.

After a predetermined time has elapsed, the valve portion 30 of the duct 18 is closed and the supply of the water vapor b of the ultrapure water A to the processing chamber 1 is stopped.

Next, by opening the valve unit 31 provided in the duct 19 and raising the temperature of the steam temperature control unit 28,
The organic solvent vapor c generated from the organic solvent C stored in the vapor generation tank 16 passes through the filter 34 and has a relatively large particle size, and mist and contaminants that cause poor drying are removed. It rapidly flows into the processing chamber 1 in a highly cleaned state.

At this time, a relatively high-temperature heat medium is circulated in the heat exchange element 13 arranged above the object to be treated 4, and the organic solvent vapor c which has been granulated in the processing chamber 1 is condensed by the heat exchange element 13. The heat exchange body 12 provided at the bottom of the processing chamber 1 condenses the organic solvent vapor c flowing into the inside of the processing chamber 1, and the pressure on the bottom side of the processing chamber 1 is increased to the upper side. It will be lower than the comparison.

Therefore, the organic solvent vapor c continuously supplied from the vapor generation tank 16 to the inside of the processing chamber 1 via the duct 19 descends inside the processing chamber 1.

At this time, the organic solvent vapor c that comes into contact with the surface of the object 4 to be treated
Is condensed to form innumerable droplets of the organic solvent C, and the innumerable droplets of the organic solvent C replace the water and the like adhering to the surface of the object to be treated 4 and adhere to the surface of the object to be treated 4. A drying process is performed to remove water.

Droplets of the organic solvent C formed by condensing the organic solvent vapor c by the surface of the object to be processed 4 and the heat exchanger 12 are discharged to the outside through the discharge pipe 7, the switching valve 8 and the discharge pipe 11. , Recovered.

After the predetermined time has passed and the water adhering to the surface of the object to be processed 4 is removed, the heating by the heating element 5 provided on the wall surface of the processing chamber 1 or the high temperature inside the processing chamber 1 By introducing the inert gas 36a, volatilization of the droplets of the organic solvent C adhering to the surface of the object 4 to be processed is promoted, and the organic solvent C is removed from the surface of the object 4 to be processed.

After that, the lid 2 is opened, and the plurality of processed objects 4 such as semiconductor wafers, which are in a clean and dry state inside the processing chamber 1, are processed by a transfer mechanism (not shown) while being housed in the transfer jig 3. It is carried out of the chamber 1.

As described above, in the present embodiment, the cleaning treatment of the workpiece 4 such as a semiconductor wafer with the chemical solution A, the rinsing treatment with ultrapure water B, and the vapor drying treatment with the vapor c of the organic solvent C are inactive. Since the process is continuously performed inside the processing chamber 1 kept in the atmosphere of the gas 36a, the object to be processed 4 comes into contact with the outside air in the middle of each process, and therefore, the cleaning process using the chemical solution A or the like is very difficult. Certainly, the removed natural oxide film is re-formed on the surface of the object to be processed 4, or the surface of the object to be cleaned 4 is again contaminated by contaminants floating in the air. To be prevented.

Further, the chemical liquid A, the ultrapure water B, the organic solvent C, etc. are once vaporized like the chemical liquid vapor a, the water vapor b, and the organic solvent vapor c, and each passes through a predetermined filter 32, 33, 34 and is further Since it is supplied to the object to be processed 4 inside the processing chamber 1 in a cleaned state, the object to be processed due to foreign substances or contaminants contained in the processing fluid itself such as the chemical liquid A, ultrapure water B, and organic solvent C. 4. Contamination of 4 is surely prevented.

As a result, the surface of the processing object 4 such as a semiconductor wafer can be highly cleaned.

As described above, the following effects can be obtained in this embodiment.

(1). A chemical vapor of the chemical liquid A, which is individually connected to a sealable processing chamber 1 in which an object to be processed 4 such as a semiconductor wafer is housed.
a, a plurality of steam generation tanks 14 for individually generating steam b of ultrapure water B and organic solvent steam c of organic solvent C, steam generation tank 1
5. A processing chamber 1 including a steam generation tank 16 in which a cleaning treatment of the object 4 to be treated with the chemical solution A, a washing treatment with ultrapure water B, and a vapor drying treatment with the vapor c of the organic solvent C are sealed. The surface of the object to be processed 4 is cleaned by pollutants floating in the atmosphere due to the object 4 coming into contact with the outside air during each process. Is reliably prevented from being recontaminated.

(2). After the chemical solution A, ultrapure water B, organic solvent C, etc. are once vaporized like chemical solution vapor a, water vapor b, organic solvent vapor c,
Each of the chemicals A, ultrapure water B, organic solvent C, etc. is treated because it is supplied to the object to be treated 4 inside the processing chamber 1 in a further cleaned state after passing through predetermined filters 32, 33, 34. Contamination of the object to be processed 4 by foreign substances or contaminants contained in the fluid itself is reliably prevented.

(3). Since the inside of the processing chamber 1 in which the object to be processed 4 is housed is maintained in the atmosphere of the inert gas 36a, the natural oxide film that has been removed by the cleaning process with the chemical solution A or the like is formed again on the surface of the object to be processed 4. Is prevented.

(4). As a result of the above (1) to (3), the surface of the object to be processed 4 such as a semiconductor wafer can be highly cleaned.

(5). As a result of the above (1) to (4), due to the presence of contaminants and natural oxide films adhering to the surface of the object to be processed 4 such as a semiconductor wafer, the object to be processed 4 such as the semiconductor wafer.
It is possible to prevent defects from occurring in the semiconductor element formed on the substrate, and to improve the yield in the wafer processing step.

(6). Processing chamber 1, multiple steam generation tanks 14, steam generation tank 1
5, duct 17, duct 18, and duct that connect with steam generation tank 16
Since the steam temperature control unit 26, the steam temperature control unit 27, and the steam temperature control unit 28 are provided in the middle of 19 along with the valve unit 29, the valve unit 30, and the valve unit 31, the duct 17, the duct 18, and the duct 19 are provided. It is possible to control the temperature of the steam of each processing fluid that is supplied to the processing chamber 1 through each of the above to a desired value, and to operate the valve portion 29, the valve portion 30, the valve portion 31
Steam generator tank 14, steam generator tank 15, steam generator tank 16
Chemical vapor flowing from duct 17 to duct 18, duct 19
By condensing a, water vapor b, and organic solvent c, a steam generation tank
14, steam generation tank 15, block heater in steam generation tank 16
It is possible to prevent the internal pressure in the steam generation tank 14, the steam generation tank 15, and the steam generation tank 16 from rising without stopping the heating operation by the block heater 23, the block heater 24, and the block heater 25.

As a result, by opening the valve portion 29, the valve portion 30, and the valve portion 31 at any time, the chemical liquid vapor a, the water vapor b, from the steam generation tank 14, the steam generation tank 15, and the steam generation tank 16 to the processing chamber 1, The supply operation of the organic solvent vapor c can be performed quickly, and the time required for a series of processing on the object to be processed 4 inside the processing chamber 1 can be shortened.

[Embodiment 2] FIG. 3 is a perspective view showing a main part of a surface treatment apparatus according to another embodiment of the present invention.

In the second embodiment, a plurality of gas sources 39 and a gas source 4 in which a plurality of components constituting the chemical liquid A are individually stored in a gas state
0 and a steam supply unit 41 for generating steam of ultrapure water, and the gas supplied from these gas sources 39 and 40 and the steam of ultrapure water supplied from the steam supply unit 41 are mixed. This is different from the case of the above embodiment in that it is mixed at a desired ratio in the portion 42 and is supplied to the processing chamber 1 as the chemical liquid vapor a.

Further, a plurality of gas sources 39, a gas source 40, a steam supply unit 41,
A filter 39a, a filter 40a, and a filter are provided between the mixing unit 42 and the mixing unit 42.
41a is interposed, and each gas component and water vapor are mixed with each other in a high purity state in which foreign substances and contaminants are removed.
Is configured to be supplied to.

Further, in the second embodiment, the steam generation tank 15 is removed from the processing chamber 1
By appropriately controlling the temperature of the steam b of the ultrapure water B supplied to the substrate 4, the steam temperature control unit 27 is appropriately controlled to wash the object 4 to be treated with droplets formed by condensation of the steam b, and the steam b.
Is heated to be supplied to the processing chamber 1, and the object 4 to be processed is dried.

 The operation of this embodiment will be described below.

First, the inert gas 36a supplied from the gas source 36 carries the object 4 to be processed such as a semiconductor wafer into the inside of the processing chamber 1 in which the atmosphere is filled with the inert gas 36a. The processing chamber 1 is closed.

Next, from a plurality of gas sources 39, 40, for example, ammonia gas, ozone, hydrogen fluoride, etc., which have been highly purified by passing through the filters 39a and 40a, and a steam supply unit 41.
The ultrapure water vapor supplied from the mixing chamber 42 is mixed in the mixing section 42 to form the chemical solution vapor a, which is supplied from the duct 17 into the processing chamber 1.

The chemical vapor a is condensed on the surface of the heat exchanging body 13 provided on the lid 2 and the object to be treated 4 to become the chemical liquid A, and the heat exchanging body 13
The cleaning treatment of the object to be processed 4 is performed by the droplets of the chemical solution A pouring from the surface and the chemical solution A formed by condensing the chemical solution vapor a on the surface of the object 4 to be processed.

After a lapse of a predetermined time, the supply of the chemical liquid vapor a from the mixing section 42 to the processing chamber 1 is stopped, and thereafter, the vapor b of the ultrapure water B passes through the duct 18 from the vapor generation tank 15 to the processing chamber 1. It is introduced inside.

At this time, the water vapor b introduced into the processing chamber 1 is provided in the lid body 2 and is located above the object 4 to be processed.
Condensed by 13 and becomes droplets of ultrapure water 4
Then, the object 4 to be processed is washed with ultrapure water.

After a lapse of a predetermined time, the inside of the processing chamber 1 is heated by the heating element 5 provided on the wall surface of the processing chamber 1, and the steam temperature control unit 27 provided in the duct 18 removes the steam from the steam generation tank 15. The steam b of the ultrapure water B supplied to the inside of the processing chamber 1 is brought into an overheated state, and the steam b in the overheated state performs the drying process of the object 4 to be processed inside the processing chamber 1.

After the elapse of a predetermined time, the supply of the heated steam b is stopped, and the object to be treated is introduced by the introduction of the heating body 5 provided on the wall surface of the processing chamber 1 or the high-temperature inert gas 36a. The heating operation of No. 4 is performed, the evaporation of moisture remaining on the surface of the object to be processed 4 is promoted, and the object 4 is completely dried.

After that, the object 4 to be processed in a clean and dried state is carried out of the processing chamber 1.

As described above, according to the second embodiment, since each of the components forming the chemical liquid A is supplied in a gas state, the chemical liquid A supplied to the object to be processed 4 located inside the processing chamber 1 can be more highly concentrated. It can be purified, and the surface of the object to be processed 4 such as a semiconductor wafer can be cleaned to a higher degree.

Further, by performing the drying treatment of the object to be treated 4 by using the superheated vapor b of the ultrapure water B, the vapor drying mechanism using the organic solvent C can be omitted, and the structure of the surface treatment apparatus can be simplified. Can be converted.

As described above, according to the second embodiment, the following effects can be obtained.

(1). Since the chemical liquid vapor a is formed by mixing the components of the chemical liquid A with the vapor of the ultrapure water in the gaseous state, the chemical liquid A supplied to the object to be processed 4 in the processing chamber 1
The purity of can be further improved, and the surface of the object to be treated 4 cleaned with the chemical solution A can be cleaned to a higher degree.

(2). By performing the drying process of the object to be processed 4 by using the superheated steam b of the ultrapure water B, the steam drying mechanism using the organic solvent C can be omitted, and the structure of the surface treatment apparatus can be simplified. be able to.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the embodiments and various modifications can be made without departing from the scope of the invention. Nor.

In the above description, the case where the invention made by the present inventor is mainly applied to the surface cleaning treatment technology of the semiconductor wafer which is the field of application which is the background has been described.
The present invention is not limited to this, and can be widely applied to, for example, cleaning / drying technology for precision parts such as lenses and optical disks.

〔The invention's effect〕

The effect obtained by the representative one of the inventions disclosed in the present application will be briefly described as follows.

That is, a processing chamber that accommodates an object to be processed, a plurality of processing fluid sources that are connected to the processing chamber and that individually supply vapors of processing fluids of different types to the processing chamber, and a plurality of processing fluid sources of the plurality of processing fluid sources. A plurality of types, each of which includes a filter interposed between the processing chamber and each of the processing chambers, and contacts at least one of the vapor of each of the processing fluids and the droplets formed by condensation of the vapor with the object to be processed. Since the surface treatment is performed continuously inside the processing chamber, it is not necessary to carry out multiple types of processing to the outside of the processing chamber, and the processing target does not contact the outside air. The pollution caused by the above, and the generation of harmful water marks and the like due to natural drying during transportation is reliably prevented, and the vapor of the processing fluid supplied into the processing chamber passes through the filter, Since it supplied to the object to be processed while being cleaned whenever it is possible to highly clean the surface of the workpiece.

[Brief description of drawings]

FIG. 1 is a perspective view showing a part of a surface treatment apparatus according to a first embodiment of the present invention by breaking it, and FIG. 2 is a schematic sectional view of a portion indicated by line II-II in FIG. 1, FIG. FIG. 4 is a perspective view showing a main part of a surface treatment apparatus that is Embodiment 2 of the present invention. 1 ... Processing chamber, 2 ... Lid, 3 ... Transfer jig, 4 ... Object to be processed, 5 ... Heating body, 6 ... Insulating body, 7 ... Discharge pipe,
8 ... Switching valve, 9, 10, 11 ... Discharge pipe, 12 ... Heat exchanger (cooling means), 13 ... Heat exchanger (cooling means), 14, 15, 16
…… Steam generation tank (processing fluid source), 17,18,19 …… Duct,
20,21,22 …… Supply and exhaust pipe, 23,24,25 …… Block heater, 2
6,27,28 …… Steam temperature control unit, 26a, 27a, 28a …… Heat exchanger, 26b, 27b, 28b …… Recovery pipe, 29,30,31 …… Valve unit, 32,3
3,34 …… Filter, 35 …… Gas supply pipe, 36 …… Gas source,
36a ... Inert gas, 37 ... Gas temperature control unit, 38 ... Filter, 39,40 ... Gas source, 39a, 40a, 41a ... Filter,
41 ... Steam supply section, 42 ... Mixing section, A ... Chemical solution (processing fluid), a ... Chemical solution vapor, B ... Ultrapure water (processing fluid),
b ... Ultrapure water vapor, C ... Organic solvent (processing fluid),
c ... Organic solvent vapor.

Claims (9)

(57) [Claims] 1. A processing chamber for accommodating an object to be processed, a plurality of processing fluid sources connected to the processing chamber and individually supplying vapors of processing fluids of different kinds to the processing chamber, and the plurality of processings. A filter provided between each of the fluid sources and the processing chamber, wherein at least one of the vapor of each of the processing fluids and droplets formed by condensation of the vapor is brought into contact with the object to be treated. A surface treatment apparatus, wherein a plurality of types of surface treatments are performed continuously inside the treatment chamber. 2. A plurality of the treatment fluids are a chemical solution having a predetermined composition, ultrapure water, and an organic solvent, the etching treatment with the chemical solution, the cleaning treatment with ultrapure water after the etching treatment, and the cleaning treatment. The surface treatment apparatus according to claim 1, wherein the subsequent vapor drying treatment using the vapor of the organic solvent is continuously performed inside the treatment chamber. 3. The surface treatment apparatus according to claim 1, wherein the drying treatment after the cleaning treatment with the ultrapure water is performed with superheated steam of the ultrapure water. 4. The vapor of the processing fluid is supplied from above the object to be treated inside the processing chamber, and cooling means for condensing the vapor is provided at the bottom of the processing chamber. 2. The surface treatment apparatus according to claim 1, wherein the surface treatment apparatus moves downward inside the processing chamber. 5. A cooling means for condensing vapor of the processing fluid supplied into the processing chamber is provided above the object to be processed inside the processing chamber, and the processing fluid is used in the cooling means. 2. The surface treatment apparatus according to claim 1, wherein the surface treatment is performed by dropping a droplet formed by condensing the vapor of the vapor onto the object to be treated. 6. The surface treatment according to claim 1, wherein each component of the chemical solution is supplied as a gas, and the etching treatment is performed by a mixture of the gas and ultrapure water vapor. apparatus. 7. The processing chamber is hermetically sealed while containing the object to be processed, and the inside of the processing chamber is in an inert gas atmosphere whose temperature is controlled to a desired value. The surface treatment apparatus according to claim 1. 8. The process chamber is provided with temperature control means for controlling the temperature of the object to be processed contained in the process chamber to a desired value. The surface treatment apparatus according to item 1. 9. An inert gas heated to a predetermined temperature is introduced into the processing chamber after the drying process of the object to be processed with the vapor of the organic solvent or the superheated vapor of the ultrapure water, or The surface treatment apparatus according to claim 1, wherein the object to be processed is heated to a predetermined temperature by the temperature control means arranged on the wall surface of the processing chamber.