JP2554039Y2 - Semiconductor thin film forming equipment - Google Patents

Description

[Detailed description of the invention]

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor thin film forming apparatus, and more particularly to a semiconductor thin film forming apparatus which can advantageously reduce the equipment cost including maintenance cost and land cost.

[0002]

2. Description of the Related Art As a method of forming an amorphous semiconductor thin film used for, for example, a solar cell, a photosensitive drum, a thin film transistor, and various sensors, there are a vapor deposition method, a sputtering method, a chemical vapor deposition method (CVD method) and the like. An apparatus for forming a semiconductor thin film, that is, a semiconductor thin film forming apparatus is disclosed in, for example, Japanese Patent Application Laid-Open No. 56-114387.
As disclosed in Japanese Patent Application Laid-Open No. H10-163, the mainstream is to form a semiconductor in a chamber that is maintained in a vacuum state or a reduced pressure state lower than the atmospheric pressure.

As shown in FIG. 2, for example, a semiconductor thin film forming apparatus of this type includes a chamber 101 capable of holding the inside thereof in a vacuum state, and a mechanism 103 for forming a semiconductor thin film on the surface of a substrate 102 in the chamber 101. And

The mechanism 103 includes, for example, an exhaust device for removing air in the chamber 101, a source gas supply device for supplying a source gas into the chamber 101 from which air has been eliminated, and heating the source gas in the chamber 101. A heater 104, an electrode 105 for forming an electric field in the chamber 101 to convert the source gas into plasma, and the chamber 101
And a transfer device 106 for transferring the substrate 102 out of the chamber 101 after the formation of the thin film.

By the way, dust and dirt enter the chamber 101 every time the thin film formation is repeated. During the subsequent thin film formation process, for example, when the exhaust device is operated or the raw material gas supply device is operated. It has been known that when this dust or dust soars up and adheres to the substrate, a pinhole is generated in the thin film, resulting in a defect.

Accordingly, in this type of thin film forming apparatus,
An opening for performing maintenance work such as cleaning of the inside of the chamber 101 is provided.

In the above conventional example, the chamber 10
An opening for taking in and out the substrate is formed in the side wall of the first unit, and a part of the mechanism 103 arranged in the chamber 101, for example, a part of the transfer device 106 is supported on the side wall. A sufficiently wide opening cannot be provided for maintenance.

Further, a horizontal plate-like electrode 105 is provided in a lower portion in the chamber 101 over a considerably wide range, and even if an opening is provided, the electrode 105 becomes an obstacle.

Therefore, in the above-mentioned conventional apparatus, an opening for maintenance is provided on the upper surface of the chamber 101. That is, the chamber 101 is composed of a box-shaped main part 101a having an upper surface entirely open and a lid 101b for closing the upper surface opening, and the upper surface opening of the main part 101a is used as an opening diagram for maintenance. ing.

Note that a sealing member 101c for ensuring airtightness is interposed between the main portion 101a and the upper lid 101b.

[0011]

According to this conventional apparatus, the lid 101b is opened to clean the inside of the chamber 101,
Maintenance work such as inspection of the transfer device 106 and the like is performed.
There is a problem that it is difficult to insert the cleaning tool between the position of the position 06 and the lower part of the transport device 106, and it is difficult to clean the cleaning tool.

Further, if such a difficult-to-clean portion is to be carefully cleaned, a great deal of labor and time are required, which is disadvantageous in reducing maintenance costs.

Further, when a maintenance opening is provided on the upper surface of the chamber 101, it is necessary to secure a relatively high space for maintenance work above the chamber 101. Can not be placed. Therefore, the chamber 10
In order to increase the production capacity by increasing the number of units 1, a floor area for expanding the chambers 101 side by side is required, and there is a problem that facility costs (equipment costs) including land costs are high. .

An object of the present invention is to provide a semiconductor thin film forming apparatus which is advantageous in solving the above-mentioned problems and reducing maintenance costs and apparatus costs.

[0015]

According to the present invention, there is provided a semiconductor thin film forming apparatus comprising: a chamber capable of holding a vacuum inside thereof; and a mechanism for forming a semiconductor thin film on a surface of a substrate in the chamber. An opening for inserting and removing at least a part of the mechanism into and from the chamber, and a lid for sealing the opening in an airtight manner, and the lid is inserted and withdrawn from the opening into the chamber through at least a part of the mechanism. together constitute, a semiconductor thin film forming apparatus provided to be inserted into and removed from the chamber from the opening at least a portion of the mechanism, the chamber
At least a part of the above mechanism inserted and removed in the vertical direction of
It is characterized in that guide means for guiding in the lateral direction at the time of insertion / extraction is provided.

[0016]

When the lid of the chamber is opened and at least a part of the above mechanism is removed from the chamber, the maintenance work such as cleaning is removed, and the maintenance work such as cleaning of the chamber is easily performed. It can be performed reliably in a short time.

Further, maintenance work such as cleaning of at least a part of the taken-out mechanism can be performed outside the chamber where a sufficiently large space can be obtained, so that it can be performed easily, reliably and in a short time. .

Further, since the opening for taking out at least a part of the mechanism from the inside of the chamber can take out at least a part of the mechanism that hinders the maintenance work, it can be opened also on the lateral side or the lower side of the chamber.

When the opening is opened on the lateral side surface of the chamber, maintenance in the chamber and maintenance of a part of the removed mechanism can be performed by removing a part of the lid and the mechanism in the lateral direction of the chamber. Therefore, it is not necessary to provide a space for maintenance work, and a plurality of chambers can be placed one above the other so as to be in close or close contact with each other.

When the opening is to be opened on the upper side or the lower side of the chamber, the lid is opened up and down to such an extent that at least a part of the internal mechanism can be moved in the lateral direction, and at least a part of the lid and the mechanism are further opened. By moving it laterally, maintenance such as cleaning of the taken out part can be performed, and by taking out at least a part of the mechanism, the inside of the chamber is made free space, so it is necessary to take out at least a part of the lid and the mechanism. Maintenance work such as cleaning can be performed by putting hands into the chamber from the space to be cleaned. Therefore, a plurality of chambers can be arranged side by side as long as a space having a relatively low height necessary for removing at least a part of the lid and the mechanism above and below the chambers is provided.

[0021]

An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows a plasma C according to an embodiment of the present invention.
It is a vertical front view of a VD apparatus.

This apparatus is used, for example, in the manufacture of a solar cell and has a chamber 1 capable of maintaining the inside in a vacuum state, and a substrate 2 in the chamber 1 formed of amorphous silicon (a-S).
i) a mechanism 3 for forming a thin film.

The chamber 1 has a main body 1a whose upper side and lower side are completely open, an upper lid 1c for closing the upper opening 1b of the main body 1a, and a lower opening 1d for the lower side of the main body 1a. And a sealing member 1f, 1g interposed between the main body 1a and the upper and lower lids 1c, 1e in order to ensure airtightness of the chamber 1.

The left and right side walls 1 of the chamber 1
h · 1i are front and rear side walls (not shown) and upper and lower lids 1c
・ Each can be decomposed from 1e.

Although not shown, openings are formed in the front side wall and the rear side wall of the chamber 1 for inserting and removing the substrate 2, respectively, and these openings are opened and closed by airtight doors. .

The mechanism 3 includes a heater 31 for heating the atmosphere in the chamber 1 and the substrate 2, an RF electrode 32 for forming an electric field in the chamber 1, and supporting the substrate 2 in the chamber 1. The apparatus includes a transfer device 33 for transferring the sheet 2 in the front-rear direction, an exhaust device (not shown), a source gas supply device, and a power supply device.

The heater 31 may be provided in the chamber 1, but in this embodiment, the heater 31 is disposed above the upper lid 1c so as to be separable from the chamber 1, and its upper surface is covered with a heat insulating material 34. . As a result, the heat generated by the heater 31 is transmitted to the entire chamber 1 so that the temperature of the inner surface of the wall of the chamber 1 becomes about 150 ° C. or more, thereby causing degassing and the deterioration of the quality of the a-Si thin film. Flakes are generated and adhere to the inner surface of the wall.

Further, the RF electrode 32 is held above the lower lid 1e also serving as a frame supporting the same via an insulator 35, and is connected to the above-mentioned power supply device for outputting a high-frequency current through an RF introducing portion 32a. Have been.

The left and right side walls 1h and 1i of the chamber 1
Each of the left and right halves of the transport device 33 is also used as a frame supported by the transport device 33. That is, each of the left and right halves of the transfer device 33 includes a plurality of rollers 33a that are positioned inside the chamber 1 on the left side wall 1h or the right side wall 1i and are rotatably supported around a horizontal axis. Wall 1
and a motor 33b supported on the outer surface of i and rotatably driving one of the rollers 33a.

Below the chamber 1, there is provided a guide device 4 which receives the lower lid 1e and guides the lower cover 1e to move horizontally in the left and right direction in the figure. The guide device 4 includes a drawer base 4a,
Together are arranged parallel to each other at appropriate intervals in the left-right horizontal direction, and a plurality of rollers 4b rotatably supported to the frame 4a.

Although the guide device 4 may be provided in the chamber 1, it is preferable that the chamber 1 be provided with as little obstacles as possible for maintenance work or an object that affects the thin film formation. The guide device 4 is preferably provided outside the chamber 1.

Next, a procedure for forming an a-Si thin film on the substrate 2 using this plasma CVD apparatus will be described.

After the substrate 2 inserted into the chamber 1 from the outside is moved to a predetermined position in the chamber 1 by the transfer device 33, the opening for taking the substrate 2 in and out is closed, and the pressure reducing device is operated to operate the chamber 1 Vacuum the inside. Thereafter, the mixed gas of silane gas and diborane gas, the mixed gas of silane gas alone, or the mixed gas of silane gas and phosphine gas is set in the chamber 1 so that the pressure in the chamber 1 is maintained at 1 atm or less by the source gas supply device. A source gas such as a gas is supplied.

Thereafter, the heater 31 is operated, and the RF electrode 3 is supplied from the power supply device via the RF introducing section 34.
By applying an RF current to the substrate 2, the source gas is turned into plasma, and a P-type layer, an I-type layer, or an N-type layer of an a-Si thin film is formed on the substrate 2.

After the P-type layer, the I-type layer, or the N-type layer is sequentially formed, the opening for taking in and out the substrate 2 is opened, and the substrate 2 is carried out of the chamber 1 by the transfer device 3.

Next, the procedure of the maintenance operation will be described, particularly focusing on the cleaning of the chamber 1 and the mechanism 3 housed in the chamber 1.

After the formation of the P-type layer, the I-type layer, or the N-type layer of the a-Si thin film, or the formation of the a-Si thin film is repeated a predetermined number of times, the upper cover 1c is lifted upward and guided.
The chamber 1 is pulled out to the left or right using the device 4 . Thereby, the upper lid 1c and the heater 31 are placed in the chamber.
1 can be taken out in the lateral direction, and dust and dirt attached to the lower side of the lid 1c can be removed by cleaning outside the chamber 1.

At this time, it is not impeded that other maintenance work such as inspection of the heater 31 is performed outside the chamber 1.

When the upper lid 1c is removed, the heater 3
1 is removed together with the upper lid 1c, and the RF electrode 32
Is integrated with the lower lid 1e, so that the inside of the chamber 1 is almost completely free space, and the maintenance inside the chamber 1 can be easily and easily performed from the upper side.
Moreover, it can be performed efficiently.

Thereafter, the upper lid 1c is returned to the lower position, and the upper opening 1b is closed in an airtight manner.
1i is disassembled in order or simultaneously and taken out, and maintenance work such as cleaning of the inner surfaces of the left and right side walls 1h and 1i and a portion accommodated in the chamber 1 of the transfer device 33 is performed outside the chamber 1; 1h ・ 1i on both sides
Are assembled in order or at the same time.

Thereafter, the lower lid 1e is opened downward, guided by the guide device 4 and moved leftward in the figure, thereby opening the lower surface of the chamber 1. This allows
Since the RF electrode 32 is taken out of the chamber 1, dust, dust and the like attached to the upper surface can be easily cleaned and removed outside the chamber 1. When maintenance work such as cleaning of the RF electrode 32 is completed, the lower lid 1e is moved below the chamber 1 by being guided by the guide device 4, and is lifted upward to close the lower opening 1d in an airtight manner. , Preparing for the subsequent thin film formation.

Thus, the upper lid 1c and the heater 31,
RF electrode 32 and Shitafutatai 1e, after each move slightly vertically, so to Eject from <br/> chamber 1 to move laterally by a guide device 4, smoothly taken out, or
The efficiency of the maintenance work is improved.
Also, since the left and right side walls 1h and 1i and the transfer device 33 are also moved in the horizontal direction and taken out of the chamber 1,
The chamber 1 and the guide device 4 can be provided in a plurality of stages at relatively narrow intervals in the vertical direction. Therefore, by increasing and arranging the chambers 1 vertically without increasing the laying floor area, the production capacity can be increased, and equipment costs (equipment costs) including land costs can be reduced.

Further, since cleaning and other maintenance work of each part of the chamber 1 and a part of the mechanism 3 accommodated in the chamber 1 can be performed by taking them out of the chamber 1, it is easy, in a short time, and , Can be performed reliably.

Further, in this embodiment, each part of the mechanism 3 taken out of the chamber 1 is an upper lid plate 1c, a lower lid plate 1e, which serves also as a frame, or left and right side walls 1h and 1i.
The parts can be put in and taken out of the chamber efficiently, and workability of maintenance work can be improved.

[0045]

In addition, by assembling the heater 31 and the upper lid 1c integrally, and assembling the RF electrode 32 and the lower lid 1e integrally, it is possible to reduce the size and size of the entire apparatus.

[0047]

As described above, according to the present invention, at least a part of a mechanism for forming a semiconductor thin film on a surface of a substrate in a chamber can be extracted from an opening formed in the chamber to clean the inside of the chamber. Cleaning of the chamber can be performed easily and in a short time without being disturbed by at least a part of the mechanism.

Further, since at least a part of the above mechanism can be pulled out of the chamber to be cleaned, inspected, adjusted, and repaired, maintenance can be performed easily, efficiently and efficiently. Like
Maintenance costs can be significantly reduced.

Further, an opening for inserting and removing at least a part of the above-mentioned mechanism into and from the chamber can be opened without any trouble on the lateral side or the lower side of the chamber. When this opening is opened on the lateral side of the chamber, it is not necessary to provide spaces for chamber maintenance above and below the chamber . Also on the upper side of the chamber
Even if the provision of the opening in the lower surface, the opening
Guide means for guiding the lid to be closed in the lateral direction is provided.
The operation can be performed smoothly,
As the workability increases, the chamber
There is no need to provide space for maintenance. Therefore, multiple chambers are placed in close or close proximity
Since they can be installed side by side, the production capacity can be increased without increasing the installation floor area, and the equipment cost including the land cost can be greatly reduced.

In the present invention, the lower surface of the chamber is particularly opened, and the frame is also used as a lid for opening and closing the lower surface of the chamber, and at least a part of the mechanism inserted and withdrawn from the opening into the chamber. In the case where an electrode for forming an electric field in the chamber is integrally fixed to the lid, the electrode is removed from the chamber together with the lid, and cleaning and other maintenance of the electrode are easy and easy, and In addition to being able to perform efficiently, the space in the lower part of the chamber becomes almost completely free space, and the workability of maintenance in the chamber can be improved. Further, the size and size of the entire device can be reduced.

[0051]

In addition, in the present invention, particularly when a heater for heating the substrate is provided outside the chamber, the temperature of the inner surface of the chamber wall is raised to a predetermined value or more by conduction heat from the heater, and degassing or a -It is possible to prevent the generation of flakes and the adhesion of the flakes to the inner surface of the wall, which cause the deterioration of the quality of the Si thin film, and to further improve the workability of maintenance work in the chamber by making free space in the chamber. It is possible to reduce the size and size of the entire device.

[Brief description of the drawings]

FIG. 1 is a vertical sectional front view of an embodiment of the present invention.

FIG. 2 is a vertical sectional front view of a conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Chamber 1b Opening 1c Upper lid 1d Opening 1e Lower lid 1h Left side wall 1i Right side wall 2 Substrate 3 Mechanism 4 Guide device 31 Heater 32 RF electrode 33 Transfer device

Continuation of the front page (56) References JP-A-1-293619 (JP, A) JP-A-60-220927 (JP, A) JP-A-1-309975 (JP, A) JP-A-1-136970 (JP) JP-A-64-25518 (JP, A) JP-A-63-308921 (JP, A) JP-A-2-74028 (JP, A) JP-A-3-74665 (JP, U) JP-A-3-74665 1-140821 (JP, U)

Claims (1)

(57) [Scope of request for utility model registration] An apparatus for forming a semiconductor thin film on a surface of a substrate in a chamber capable of maintaining a vacuum state inside the semiconductor thin film forming apparatus, wherein at least a part of the mechanism is provided in the chamber. an opening for insertion within, with this opening is provided with a lid that closes in an airtight manner to form a lid with at least a portion of the mechanism to be inserted into and removed from the chamber from the opening, at least of the mechanism Semiconductor thin film type with a part that can be inserted into and removed from the chamber through the above opening
Device that is inserted and removed in the vertical direction of the chamber.
Guide laterally when inserting and removing at least part of the mechanism
An apparatus for forming a semiconductor thin film, comprising a guide means .