JPS60220927A - Manufacturing device for semiconductor - Google Patents

Abstract

PURPOSE:To dispense with a shielding plate and to eliminate the power loss of turned- ON power by a method wherein, when mutually opposed two electrodes are provided in the interior of the reaction chamber container, wherein an amorphous thin film is grown on the surface of the substrate utilizing glow discharge, one of the two electrodes is formed on the base of the container as an electrode for power supply. CONSTITUTION:An upper electrode 9 provided with a heating heater 10 on its back surface and a lower electrode 11, which has been provided in opposition to the upper electrode 9 at a prescribed interval, are provided in the interior of a reaction chamber container 7, which has been earthed and has been sealed with O-rings 13. The electrode 11 is connected to a high-frequency power source RF, whose other end has been earthed, through a matching circuit. In this constitution, the lower electrode 11 is fitted in apertures bored in the base of the container 7 using terminal insulators 12 and the lower electrode 11 is integrally formed in one body with the base of the container 7. Moreover, a substrate 8 is adhered on the lower surface of the upper electrode 9. Raw gas is made to pass through apertures being provided on both sidewalls of the container 7 and a desired amorphous thin film is grown on the substrate 8. According to such a way, no discharge generates excluding the space between the opposed electrodes. As a result, a shielding plate and so forth can be dispensed with.

Description

[Detailed description of the invention] Industrial application field The present invention decomposes raw material gas using glow discharge etc.
The present invention relates to a semiconductor manufacturing apparatus that deposits an amorphous thin film on a substrate.

Conventional configurations and their problems In recent years, amorphous semiconductors, as typified by amorphous silicon solar cells, have entered the industrial world at a remarkable pace, and various new types of manufacturing equipment have been developed. It is progressing. A conventional semiconductor manufacturing apparatus will be described below with reference to the drawings, and FIG. 1 is a schematic diagram of a reaction chamber of a conventional semiconductor manufacturing apparatus using glow discharge. In FIG. 1, 1 is a reaction chamber container, 2 is a lower electrode provided in the container 1, and 13. ．． It is connected to a high frequency power supply RF of 66 Ml-1z. Reference numeral 3 designates a shield plate which is kept at ground potential by maintaining a constant gap from the lower electrode 2, 4 a substrate, 5 an upper electrode, and 6 a heater for heating the substrate. The operation of the semiconductor manufacturing apparatus configured as described above will be described below. A raw material gas, for example, SIHa gas diluted to 10% with H2 gas, is introduced into the reaction chamber container 1 from the reaction gas inlet as shown by the arrow, and maintained at a constant degree of vacuum by evacuation treatment. The substrate 4 attached to the upper electrode 5 is maintained at an appropriate temperature by a heater 6. Next, when power is supplied to the lower electrode 2 from the high frequency power source RF via a matching circuit, a glow discharge is generated between both electrodes 2.6. The decomposition products S I present in the S I H4 plasma generated by this glow discharge
Radical species such as H2, S iH, S i , H, etc. can reach the substrate surface and deposit an amorphous silicon thin film on the substrate by surface reaction. However, in the semiconductor manufacturing equipment with the above configuration, as shown in FIG. It was necessary to attach the shield plate 3 while maintaining a certain gap from the lower electrode.

In addition, a strong abnormal discharge occurs between the shield plate 3 and the lower electrode 2, causing loss of input power and generation of pinholes in the deposited film due to ion bombardment. Furthermore, when removing powdery deposits that have accumulated on the inner bottom of the reaction chamber vessel 1 below the lower electrode 2 and cleaning the inside of the tube, the lower electrode 2 becomes a nuisance and must be removed. However, there was a problem in that it was time-consuming.

Purpose of the Invention In view of the above drawbacks, the present invention provides a semiconductor manufacturing apparatus that does not require a shield plate for the lower electrode, eliminates input power loss due to discharge other than between the upper and lower electrodes, and can deposit a high-quality film. The purpose of the present invention is to provide a structure that allows easy cleaning of the reaction chamber.

Structure of the Invention To achieve this object, the semiconductor manufacturing apparatus of the present invention provides a reaction chamber container having at least one pair of electrodes, in which one of the pair of electrodes to which electric power is supplied is connected to the reaction chamber container. It is characterized by being configured so as to form a part of the.

DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 2 shows a schematic diagram of a semiconductor manufacturing apparatus according to an embodiment of the present invention.

In FIG. 2, 7 is a reaction chamber container, 8 is a substrate, 9 is an upper electrode, 1o is a heater, and 13 is a ring, which are the same as those in FIG. 1.

Reference numeral 11 denotes a lower electrode that also serves as a part of the bottom of the reaction chamber container 7. It is electrically insulated from the reaction chamber container 7, which is kept at ground potential, by an insulator 12, and is connected to a high frequency power source RF through a matching circuit. It is connected. With the above configuration, 9,
No discharge occurs except between the upper and lower electrodes 11, and since the atmosphere outside the reaction chamber is atmospheric pressure, no discharge occurs unless a metal object is brought close to the back surface of the lower electrode. Therefore, it was possible to prevent loss of input power and obtain a deposited film of good quality without pinholes caused by abnormal discharge. In addition, since there is no longer a protrusion like a lower electrode inside the reaction chamber 7, it is no longer necessary to remove the lower electrode and remove powdery reaction products as in the conventional case, making maintenance and inspection very easy. I was able to do some cleaning.

Effects of the Invention As described above, the present invention has at least one pair of electrodes.
In the reaction chamber vessel in which the amorphous thin film is deposited, one of the pair of electrodes to which power is supplied forms a part of the reaction chamber vessel, so that a shield plate is not required for the lower electrode. In addition, it is possible to produce a high quality deposited film by eliminating input power loss due to discharge other than between the upper and lower electrodes, and it has become possible to easily clean the reaction chamber.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram of a reaction chamber of a conventional semiconductor manufacturing apparatus, and FIG. 2 is a schematic diagram of a reaction chamber of a semiconductor manufacturing apparatus in an embodiment of the present invention. 1.7...Reaction chamber container, 5,9...-first upper electrode,
2.11...lower electrode, 12--insulator.

Claims (1)

[Claims] A reaction chamber for depositing an amorphous thin film having at least a pair of electrodes therein, and one of the pair of electrodes to which electric power is supplied forms a part of the reaction chamber. Semiconductor manufacturing equipment.