JPS61295375A - Formation apparatus for accumulated film by glow discharge decomposition method - Google Patents

Abstract

PURPOSE:To stably form an accumulated film which is uniform and homogeneous by providing a coaxial cylindrical anodic electrode between a cylindrical cathodic electrode and a coaxial cylindrical base material and providing many drawing-out ports of a neutral radical particle to the anodic electrode. CONSTITUTION:A coaxial cylindrical anodic electrode 11 is provided between a cylindrical base material 6 and a cathodic electrode 3. The drawing-out ports 11a of a neutral radical particle are provided to the anodic electrode 11. When impressing high frequency electric powder between the cathodic electrode 3 and the anodic electrode 11, the plasma discharge is caused in a space C. The produced electron and a negative particle are caught on the anodic cathode 11. Only the neutral radical particle contributing to the formation of an accumulated film or a nondecomposed gas is discharged to the inside of a film formation space D through the drawing-out ports 11a of the neutral radical particle. By this mechanism, the damage of the accumulated film due to the plasma shock is prevented and a stabilized semiconductor film can be regularly formed.

Description

Detailed Description of the Invention [Technical Field to which the Invention Pertains] The present invention relates to a film deposited on a substrate, particularly a functional film, particularly a semiconductor device, a photosensitive device for electrophotography, a line sensor for image input, an imaging device, and a photosensitive device. The present invention relates to an apparatus for forming an amorphous semiconductor film used in power devices and the like.

[Description of Prior Art] Conventionally, semiconductor devices, photosensitive devices for electrophotography,
For example, amorphous silicon (hereinafter referred to as RA-8i J), hydrogenated amorphous silicon ( Deposited films of amorphous semiconductors such as ra-8i:Hj (hereinafter referred to as ra-8i:Hj) have been proposed, and some of them have been put into practical use. Such a deposited film is formed by a glow discharge decomposition method, that is, a method in which raw material gas is decomposed by direct current or high-frequency glow discharge to form a thin deposited film on a substrate such as glass, quartz, or stainless steel. is known, and various devices for this purpose have been proposed.

As a conventional apparatus for forming a deposited film using the glow discharge decomposition method, there is known a deposited film forming apparatus capable of efficiently forming a deposited film on a cylindrical substrate as shown in FIG. 8a, for example.

FIG. 8a is a schematic cross-sectional view showing an example of a conventional apparatus for forming a deposited film on a cylindrical substrate.

In the figure, 1 is a cylindrical reaction vessel, which is sealed by an earthen wall, a peripheral wall, and a bottom wall to form a reaction chamber, and a coaxial cylindrical base 6 is installed inside. Insulating rings 2 a r 2 b are disposed at the upper and lower ends of the peripheral wall of the reaction vessel 1, and a cathode electrode 3 having a double wall structure is provided between the upper and lower insulating rings 2a and 2b. That is, the outer wall 3a of the double-walled walls is connected to the high frequency power source 4 via a conductive wire. The inner wall 3b is electrically connected to the outer wall 3a, and is provided with a plurality of gas discharge ports 6c for blowing out raw material gas into the reaction vessel B. Reference numeral 5 denotes a raw material gas supply pipe, which is provided to penetrate the side wall 3a of the cathode electrode 3. One end opens into the space A formed by the outer wall 3a and the inner wall 3b, and the other end connects to the raw material gas supply source ( (not shown). The cylindrical base 6 is made of metal such as aluminum, and is electrically grounded to serve as an anode electrode, and serves as the cathode electrode 6.
A high frequency voltage is applied between the cylindrical substrate (anode electrode) 6 and the cylindrical substrate (anode electrode) 6 to generate a glazma discharge. Coaxial cylindrical base 6
A heater 7 for heating the substrate 6 to an optimal temperature for forming a deposited film is built inside. 8 is a motor provided to rotate the cylindrical base. Reference numeral 9 denotes an exhaust port provided on the bottom wall of the reaction vessel 1, which is connected to an exhaust device (not shown) via an exhaust pipe equipped with a pulp means 10 in order to evacuate the inside of the reaction vessel.

An amorphous semiconductor film is deposited on the surface of a cylindrical substrate using the above-described deposited film forming apparatus as follows.

That is, the gas inside the reaction vessel 1 is evacuated from the exhaust port 9 by an exhaust device (not shown), the cylindrical substrate 6 is heated and maintained at 200 to 500° C. by the heater 7, and the motor 8 is driven. Let it rotate. Next, a source gas such as silane gas is introduced into the space A from the source gas supply pipe 5, for example, in the case of forming an amorphous silicon deposited film. The raw material gas introduced into the space A passes through a large number of gas discharge ports 3c provided on the inner wall 3b of the cathode electrode.
It is discharged into a reaction space B surrounded by the cathode inner wall 3b and the cylindrical substrate (anode electrode) 6.

Next, when a high frequency voltage with a frequency of 13.56 MHz is applied from the power source 4 to the cathode electrode 3, the inner wall 3 of the cathode electrode
Electrons are emitted from b toward the cylindrical substrate (anode electrode) B. The emitted electrons collide with molecules such as silane gas, decompose the gas molecules, and generate ion particles, neutral radical particles, and the like. These electrons, ion particles, neutral Lanocal particles, etc. fly onto the surface of the cylindrical substrate 6, but it is mainly the neutral radical particles that contribute to the deposition of the amorphous semiconductor film, and the interaction between these neutral radical particles Alternatively, it is considered that a deposited film is formed on the substrate 6 as a result of a complex reaction between the neutral radical particles and the source gas or between the neutral ranocal particles and the surface of the substrate. On the other hand, electrons and ion particles collide with the deposited film during or after formation,
It has been found that dangling causes an increase in the density of undesirable structural defects in an amorphous semiconductor film, such as bonds, voids, and SIH2 bonds.

In other words, in the conventional apparatus for forming a deposited film using the glow discharge decomposition method, the structure is such that the substrate installed inside is directly exposed to a plasma atmosphere, so there is no risk of degrading the various properties of the deposited film that is formed. It is difficult to efficiently and always stably obtain a deposited film of high quality, uniformity, and excellent desired properties.

In addition, although there are factors that influence the formation of the deposited film, such as source gas concentration, gas pressure, gas flow rate, input power, etc., in the conventional apparatus, the thickness distribution of the deposited film formed on the surface of the base 6 is The distribution of the raw material gas discharge ports 5C was adjusted in order to make it uniform. However, in the gas decomposition process,
The plasma intensity distribution is determined by the shape of the cathode electrode, the potential drop, or the difference between the cathode electrode 6 and the cylindrical substrate (anode electrode) 6.
It is difficult to make the film thickness distribution uniform by adjusting only the distribution of the gas discharge ports 6C because it is strongly influenced by the zero interval and the like.

Furthermore, the cathode electrode material is splattered by the positive ion particles generated by the plasma and flies to the surface of the cylindrical substrate 6, which causes it to be mixed into the deposited film as impurities and deteriorate various properties of the deposited film. There is also the problem of being one of the causes of this.

[Purpose of the invention]

The present invention overcomes the problems in conventional devices as described above, and provides semiconductor devices, photosensitive devices for electrophotography, line sensors for image input, imaging devices, photovoltaic devices, various other electronic devices, optical devices, etc. It is an object of the present invention to provide an apparatus capable of regularly and stably forming a deposited film as an element member used in a device using a glow discharge decomposition method.

That is, the main object of the present invention is to eliminate damage to the deposited film due to plasma bombardment, to make it uniform and homogeneous, and to produce a glow discharge that can constantly and stably form a deposited film of good quality and excellent desired properties. An object of the present invention is to provide an apparatus for forming a deposited film using a decomposition method.

Another object of the present invention is to provide a glow that can easily control the thickness and quality of the deposited film to be formed, and can form a deposited film with a uniform thickness distribution and uniform quality. An object of the present invention is to provide an apparatus for forming a deposited film using a discharge decomposition method.

[Structure of the invention]

The present invention provides an apparatus for forming a deposited film using a glow discharge decomposition method that can achieve the above-mentioned objects.

In order to overcome the above-mentioned problems in conventional devices, the present inventor continued intensive research and found that in order to prevent the substrate from being directly exposed to the glazma atmosphere, it was found that We obtained the knowledge that it is sufficient to separate the plasma discharge space and the film formation space. After further research,
A coaxial cylindrical anode electrode is installed between the cylindrical cathode electrode 3 and the coaxial cylindrical substrate 6, and the cylindrical anode electrode blocks the passage of ionic species and electrons and contains neutral radical species and undecomposed reaction gas. By providing a large number of outlets for neutral radical particles to pass through, the reaction chamber is separated into a plasma discharge space and a film forming space, and the cylindrical anode electrode has the function of a counter electrode for generating a glazma discharge. It has been found that it is sufficient to have a function as a plasma shielding plate to prevent the base body 6 from being directly exposed to a plasma atmosphere.

The apparatus of the present invention was completed based on this knowledge, and includes a cylindrical reaction vessel equipped with a reaction chamber surrounded and sealed by a soil wall, a side wall, and a bottom wall, and a raw material gas introduced into the reaction chamber. In an apparatus for forming a deposited film by a glow discharge decomposition method on a coaxial cylindrical substrate installed in a reaction vessel, the apparatus has a means for evacuating the inside of the reaction chamber. A cylindrical substrate having a cathode electrode and for forming a deposited film in the reaction vessel is disposed coaxially, and a cylindrical anode electrode is disposed between the cylindrical cathode electrode and the cylindrical substrate. The cylindrical anode electrode is arranged coaxially, and further blocks the passage of ion particles and electrons generated by glow discharge on the wall of the cylindrical anode electrode, and selectively passes only neutral radical particles and undecomposed reaction gas. The present invention is characterized in that a plurality of neutral radical particle extraction ports are provided in a shape that allows the neutral radical particles to exit.

DETAILED DESCRIPTION OF THE INVENTION The apparatus for forming a deposited film by the glow discharge decomposition method having the above-mentioned structure of the present invention will be explained in more detail with reference to the embodiments of the drawings, but the present invention is not limited thereto. 1st
The figure is a schematic cross-sectional view of an apparatus according to an optimal example of the present invention, and FIG. 2 is a perspective view showing the arrangement of anode electrodes in the apparatus of FIG. 1.

In the figure, the same symbols as in FIG. 8a are used for parts having the same functions as those of the conventional device described above. That is, 1 is a reaction vessel, 2a and 2b are insulating rings, 3 is a cathode electrode,
3a is an outer wall thereof, 3b is an inner wall thereof, 3c is a gas discharge port provided in 3b, 4 is a high frequency power source, and 5 is a source gas source.
A supply pipe, 6 a coaxial cylindrical base, 7 a heater, 8 a motor, 9 an exhaust port, and 10 a valve. Similarly to 11, it is electrically grounded. When high frequency power is applied between the cathode electrode 6 and the coaxial anode electrode 11,
Plasma discharge is generated in the space C formed between the cathode electrode inner wall 3b and the anode electrode 110. The anode electrode 11 functions as a plasma shielding plate to prevent plasma discharge from leaking into the film forming space formed between the anode electrode 11 and the cylindrical substrate B, and also functions as a plasma shield plate to prevent plasma discharge from leaking into the film forming space formed between the anode electrode 11 and the cylindrical substrate B. A plurality of vacancy extraction ports 11a are provided to selectively form a film of only neutral particles and undecomposed reaction gas. By providing the anode electrode 11 between the cylindrical substrate 6 and the cathode inner wall 6b, electrons and negative ion particles generated in the plasma discharge space C are transferred to the anode electrode 1.
1, it becomes possible to introduce only neutral particles such as neutral radical particles and undecomposed gas into the film forming space.

Note that since the anode electrode 11 and the cylindrical substrate 6 are electrically grounded and maintained at the same potential, the structure is such that no plasma discharge occurs between them.

By the way, only neutral radical particles or undecomposed gas contributing to the formation of a deposited film are released from the neutral radical particle outlet 11a provided in the cylindrical anode electrode 11.
On the other hand, it is an important requirement that electrons and negative ion particles, which have an adverse effect on the film quality of the deposited film, be captured by the cylindrical anode electrode 11. After various studies on this point, the inventor found that neutral It has been found that the opening shape of the radical particle extraction port 11a is a major factor.

Incidentally, the present inventor conducted the following experiment regarding the opening size of the neutral radical particle extraction port, and as a result, confirmed that the opening size should be 5 mm or less.

That is, the inventor conducted the following experiment to arrive at the above conclusion.

FIG. 3 shows an example of a cylindrical anode electrode used in the device of the present invention, which has a large number of slit-shaped openings parallel to the central axis direction of the cylindrical substrate as neutral Lanocal particle extraction ports. It is something.

When electrons and negative ion particles generated in the discharge space C are released from the discharge space C to the film forming space through a slit-shaped opening provided as a neutral radical particle extraction port, the conditions are as follows: In addition to the aperture size of
It may also change depending on the discharge pressure and the magnitude of high-frequency power. Therefore, using neutral radical particle extraction ports with different opening sizes a, the conditions under which electrons and negative ion particles are released into the film-forming space in each case were investigated. Figure 4 shows the opening size of 10 mm.
The figure shows the experimental results of the conditions under which electrons and negative ion particles invade from the discharge space to the film formation space. Using the apparatus shown in Figure 1, the distance between the anode and cathode electrodes 50 punishment, 10 silane gas as raw material gas
Using six types of gases: 0%, hydrogen gas 100%, and silane gas/hydrogen gas = 1:1.03, the gas flow rate of these gases is kept constant, and the discharge pressure is controlled by adjusting the exhaust volume. The results of the experiment are shown below.

In the right-hand region of each curve [Pressure (Press) - High frequency power (ppi? Ku-curve]) in Fig. 4,
This indicates that electrons and negative ion particles are required to enter the film forming space.

Further, under the same conditions, an experiment was also conducted using a neutral Lanocal outlet with an opening size a of 51111. As a result, when the high frequency power was 2 kW or less, electrons and negative ion particles did not enter the film forming chamber.

As a result of these experiments, it was found that the conditions for forming an amorphous silicon film for electrophotographic photoreceptors were, for example, a pressure of 0.3 Torr.
SRF power 350 W, 5i In H4/H2 mixed gas atmosphere, the opening size of the neutral radical release port is 10
When the opening size was set to 5mm, electrons, negative ion particles, etc. entered the film forming space as is clear from FIG. 4, but it became clear that they did not enter when the opening size was set to 5mm.

From the above, in order to achieve the objective of the present invention, which is to prevent the cylindrical substrate from being exposed to plasma generated by glow discharge, the opening size of the neutral radical extraction port provided in the cylindrical anode electrode should be 5 ms or less. We obtained the knowledge that it is necessary to

The shape of the neutral radical extraction port 11a of the anode electrode 11 in the device of the present invention is not limited to that shown in FIG. 3, but may be of any shape as long as the opening size a is 5n or less. For example, it may have a shape as shown in FIGS. 5 and 6. That is, when the opening hole 11a has a circular shape as shown in FIG.
may be set to 51 m or less.

By the way, when forming a deposited film using a conventional apparatus as shown in FIG. 8a, in order to make the film thickness distribution of the deposited film formed on the surface of a cylindrical substrate uniform in the central axis direction of the substrate, This was done by adjusting the shape and distribution of the gas discharge ports 3C. That is, by adjusting the shape and distribution of the gas discharge ports 3c of the cathode electrode inner wall 3b,
The gas concentration distribution in reaction space B was controlled to control the thickness of the film formed on the substrate.

However, even if the concentration distribution of the raw material gas is made uniform, the intensity of the generated plasma becomes uneven due to the potential drop at the cathode electrode 3, the shape of the cathode electrode, the distance between the cathode electrode and the anode electrode, etc. It is known that the thickness distribution of the deposited film formed is strongly influenced by the plasma intensity distribution. Figures 8b to 8d are diagrams showing parameter dependence when a conventional deposited film forming apparatus is used. Figure 8b shows the gas concentration distribution in reaction space B, and Figure 8C shows the gas concentration distribution in reaction space B. FIG. 8d is a diagram showing the plasma intensity distribution and the film thickness distribution formed on the substrate surface. The reason why the film thickness distribution is strongly influenced by the plasma intensity distribution is considered to be because the distribution of the amount of neutral radical particles produced that contributes to film formation differs depending on the plasma intensity. Furthermore, it is not only impossible to adjust the gas concentration distribution and make the film thickness uniform by adjusting the shape and/or distribution of the gas discharge ports on the inner wall of the cathode electrode, as in the past; Making the film thickness uniform by making the concentration distribution extremely non-uniform results in non-uniform pressure distribution in the reaction space, which changes the gas decomposition process and results in non-uniform film quality. It is undesirable to use because it causes defects.

On the other hand, when using the apparatus of the present invention, by adjusting the shape and/or distribution of the neutral Lanocal particle outlet provided in the cylindrical anode electrode, the neutral particles introduced into the film forming space can be It is possible to directly control the concentration distribution of radical particles. For example, even if non-uniform distribution of plasma intensity occurs due to potential drop of the anode electrode, etc., it can be introduced into the film forming space by adjusting the shape and/or distribution of the neutral radical particle extraction port. It is possible to control the neutral radical particles that cause the formation of a uniform and homogeneous deposited film in a stable manner.

Figures 7a to 70 are typical adjustment anode electrodes used when uneven film thickness distribution occurs as shown in Figure 8d. It is not limited by.

In the examples shown in FIGS. 7a to 70, the aperture size is increased in the region where the film thickness becomes thinner (a in the figure), and the aperture size is made smaller in the region where the film thickness becomes thicker (b in the figure). That is, 51
111≧a) Make sure that the relationship b holds true. 7th
In Figure a, a large number of slits are provided in the central axis direction of a cylindrical anode electrode, and the slit width is s mii≧a in the circumferential direction.
) Figure 7b shows an example in which the relationship b is continuously changed so that the relationship b holds true, in which a large number of slits are provided in the circumferential direction of a cylindrical anode electrode, and the slit width is 5fii! in the central axis direction.
≧a) An example of continuous change so that the relationship of b holds true.Furthermore, in Fig. 7C, a large number of circular openings are provided in the anode electrode, and the diameter thereof is 5 mm in the central axis direction.The relationship of ≧a) b holds. This is an example of continuous change.

The coaxial cylindrical anode electrode in the device of the present invention has a function as a shielding plate that prevents the cylindrical substrate from being bombarded by electrons and ion particles as described above, and also has the function of a neutral By adjusting the shape and distribution of the radical particle outlet, the concentration distribution of neutral radical particles that contribute to film deposition can be adjusted.
In addition to being able to control the thickness distribution of the deposited film that is formed, it is less susceptible to changes in neutral radical particle concentration due to changes in plasma intensity distribution, unlike conventional devices, and as a result, the film quality is homogeneous. A deposited film with a uniform thickness distribution can be formed with good reproducibility. Furthermore, the cylindrical anode electrode in the device of the present invention allows positive ion particles in the plasma to pass through the inner wall of the cathode electrode.
It also has the function of a shielding plate that prevents the electrode material that has sprung out due to the vines from reaching the surface of the cylindrical substrate.

Further, a deposited film is formed using the above-described apparatus of the present invention in the following manner.

For example, when manufacturing an amorphous silicon (hereinafter referred to as RA-SI) semiconductor film as a photosensitive device for electrophotography, an aluminum drum is used as the cylindrical substrate, and the raw material gas is 5IH4, S1□H6, etc. silane gas or halogenated silane gas.

These raw material gases can be used alone or in combination of two or more, and can also be used after being diluted with an inert gas such as He or Ar. Furthermore, the a-8i deposited film can be doped with n-type impurities, n-type impurities, and other atoms. The gas can be used alone or in combination with the above-mentioned source gas.

First, the valve 10 is opened and the gas inside the reaction vessel is evacuated through the exhaust port 9 by a vacuum exhaust device (not shown), and the pressure inside the reaction vessel is preferably reduced to 5×10−6To.
rr or less, more preferably 1×10=Torr or less.

Next, a raw material gas such as silane gas is introduced from the raw material gas introduction pipe 5,
It is introduced into the interior A of the cathode electrode 6 having a cylindrical double wall structure. The source gas is discharged into the plasma discharge space C from a gas discharge port 5C opened in the inner wall 3b of the cathode electrode. By adjusting Parbuto O, the pressure inside the reaction vessel when gas is introduced is preferably 1 x 10''2 to 100T.
orr.

More preferably, it is 1×10 −2 to I Torr. On the other hand, the aluminum drum serving as the cylindrical substrate 6 is heated to 30 to 450°C, preferably 200 to 300°C using a heater 7.
℃ and drive the motor 8 to rotate.

At this point, when a high frequency voltage is applied from the high frequency power supply 4 to the cathode electrode B, a plasma discharge is generated in the plasma discharge space C between the cathode electrode 3 and the anode electrode 10. In the plasma discharge space C, the introduced silane gas is decomposed to generate ion particles, neutral radical particles, and the like. Here, the anode electrode 11 is grounded and has a positive potential, whereas the cathode electrode 3 has a negative potential, and the negative ion particles and electrons among the generated ion particles are transferred to the anode electrode. 11, the positive ion particles fly toward the cathode electrode 3 side. Negative ion particles and electrons are captured by the anode electrode 11, and only neutral particles such as neutral radical particles and undecomposed gas are captured by the neutral particle extraction port 11. It is introduced into the film forming space through a. The neutral radical particles introduced into the film forming space flow toward the exhaust port 9 along the surface of the aluminum drum heated by the heater 7, and deposit an A-8I semiconductor film on the surface of the aluminum substrate 6. . Neutral radical particles and undecomposed gases that did not contribute to the deposition are removed from the deposition film forming apparatus by an exhaust device (not shown) through exhaust ports 9 provided at the upper and lower ends of the cylindrical substrate 6 in the central axis direction. is exhausted.

[Summary of effects of the invention]

In the device of the present invention, a coaxial cylindrical anode electrode having a neutral radical particle extraction port is provided between a cylindrical cathode electrode and a coaxial cylindrical substrate inside the cathode electrode, and the opening size of the neutral radical particle extraction port is adjusted. By setting the thickness to 5 or less, the coaxial cylindrical anode electrode not only functions as a counter electrode for generating plasma discharge, but also serves as a plasma shielding plate to prevent the cylindrical substrate from being directly exposed to plasma. In order to achieve this function, the film being deposited on the cylindrical substrate will not be damaged by the bombardment of electrons or negative ion particles, and the deposited film with a very low density of structural defects and good desired properties can be produced efficiently. can be obtained stably.

Furthermore, the device of the present invention can adjust the concentration distribution of neutral radical particles that contribute to the formation of a deposited film by adjusting the shape and distribution of the neutral radical particle outlet provided in the cylindrical anode electrode. It is something. Therefore, unlike conventional glow discharge method deposited film forming equipment, it is not affected by changes in neutral radical particle concentration due to changes in plasma intensity distribution, and deposited films with uniform thickness and quality distribution can be produced. It can be formed efficiently with good reproducibility.

Furthermore, in the apparatus of the present invention, the cylindrical anode electrode includes a shielding plate that prevents electrode material ejected by positive ion particles in the plasma from sputtering on the cylindrical cathode electrode surface from reaching the cylindrical substrate surface. Figure 1 shows an embodiment of an apparatus according to the present invention. Schematic cross-sectional diagram of.

FIG. 2 is a perspective view showing the arrangement of anode electrodes in the apparatus according to the embodiment of the present invention. FIG. 5, FIG. 5, and FIG. 6 are perspective views showing typical examples of anode electrodes in the device of the present invention.

FIG. 4 is a pressure-high-frequency power curve diagram showing conditions for plasma entry into the film forming space when a cylindrical anode electrode having a neutral radical particle outlet with an opening size of 10 zm is used.

7a to 70 are perspective views showing typical examples of anode electrodes for adjustment in the apparatus of the present invention. FIG. 8a is a schematic cross-sectional view showing an example of a conventional apparatus for forming a deposited film using a glow discharge method. 8b to 8d are diagrams showing the gas concentration distribution, plasma intensity distribution, and film thickness distribution of the deposited film on the surface of the cylindrical substrate in the conventional apparatus.

1... Reaction container, 2a, 2b... Insulation ring, 6.
... Cathode electrode, 3a... Outer wall of cathode electrode,
6b... Base, 7... Heater, 8... Motor, 9... Exhaust C... Plasma discharge space, D... Film forming space, a, b... Opening size Fig. 1 Figure 4: Discharge entry boundary condition RF power (W) Figure 8b Figure 8c Figure 8d

Claims (9)

[Claims] (1) An apparatus for forming a deposited film by glow discharge decomposition method, which has a cylindrical cathode electrode that also serves as a side wall of a reaction vessel, and a cylindrical base body for forming a deposited film inside the reaction vessel is arranged coaxially. At the same time, a cylindrical anode electrode is disposed coaxially between the cylindrical cathode electrode and the cylindrical base, and further, ion species generated by glow discharge are disposed on the wall surface of the cylindrical anode electrode. and a deposited film forming apparatus, characterized in that a plurality of neutral radical particle extraction ports are provided in a shape that blocks the passage of electrons and selectively allows only neutral radical species and undecomposed reaction gas to pass. (2) The opening size of the neutral radical particle outlet is 5m.
Claim No. (1) characterized in that it is less than or equal to m.
An apparatus for forming a deposited film as described in the item. (3) A patent claim characterized in that the concentration distribution of neutral radical particles released from the neutral radical particle outlet is adjusted by adjusting the shape and/or distribution of the neutral radical particle outlet. An apparatus for forming a deposited film according to item (1) or item (2) of the range. (4) The deposited film according to claim (3), wherein the shape and/or distribution of the neutral radical particle outlet is continuously changed in the direction of the central axis of the cylindrical substrate. Forming device. (5) What is a cylindrical cathode electrode and a cylindrical anode electrode?
The deposited film forming apparatus according to claim 1, wherein the deposited film forming apparatus is electrically isolated by an insulating material. (6) A cylindrical cathode electrode and a cylindrical anode electrode,
The apparatus for forming a deposited film according to claim 1, wherein a plasma discharge space is formed by maintaining an interval at which a glow discharge can occur. (7) Claim (1) characterized in that exhaust ports for evacuating the inside of the reaction vessel are arranged at the upper and lower ends of the central axis of the space formed by the cylindrical anode electrode and the cylindrical base. An apparatus for forming a deposited film as described in the item. (8) Item (1) of the claim, characterized in that the cylindrical substrate is made of a metal such as aluminum and is electrically grounded so that it is maintained at the same potential as the cylindrical anode electrode. An apparatus for forming the deposited film described above. (9) Claim (1) characterized in that a heating means for heating the cylindrical base is disposed inside the cylindrical base.
) Deposited film forming apparatus described in the item.