JP2548948Y2 - 静電走査型イオン注入装置 - Google Patents
静電走査型イオン注入装置Info
- Publication number
- JP2548948Y2 JP2548948Y2 JP1990053451U JP5345190U JP2548948Y2 JP 2548948 Y2 JP2548948 Y2 JP 2548948Y2 JP 1990053451 U JP1990053451 U JP 1990053451U JP 5345190 U JP5345190 U JP 5345190U JP 2548948 Y2 JP2548948 Y2 JP 2548948Y2
- Authority
- JP
- Japan
- Prior art keywords
- scanning signal
- frequency
- amplitude
- triangular wave
- direction scanning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005468 ion implantation Methods 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 12
- 238000010884 ion-beam technique Methods 0.000 description 7
- 230000006870 function Effects 0.000 description 4
- 238000002513 implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990053451U JP2548948Y2 (ja) | 1990-05-22 | 1990-05-22 | 静電走査型イオン注入装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990053451U JP2548948Y2 (ja) | 1990-05-22 | 1990-05-22 | 静電走査型イオン注入装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0412251U JPH0412251U (enExample) | 1992-01-31 |
| JP2548948Y2 true JP2548948Y2 (ja) | 1997-09-24 |
Family
ID=31574646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990053451U Expired - Lifetime JP2548948Y2 (ja) | 1990-05-22 | 1990-05-22 | 静電走査型イオン注入装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2548948Y2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8735855B2 (en) | 2010-06-07 | 2014-05-27 | Sen Corporation | Ion beam irradiation system and ion beam irradiation method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5494275A (en) * | 1978-01-10 | 1979-07-25 | Toshiba Corp | Implanting method of charge particles to semiconductor wafers and apparatus for the same |
-
1990
- 1990-05-22 JP JP1990053451U patent/JP2548948Y2/ja not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8735855B2 (en) | 2010-06-07 | 2014-05-27 | Sen Corporation | Ion beam irradiation system and ion beam irradiation method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0412251U (enExample) | 1992-01-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |