JP2515923B2 - Method for sealing semiconductor device - Google Patents
Method for sealing semiconductor deviceInfo
- Publication number
- JP2515923B2 JP2515923B2 JP2309690A JP30969090A JP2515923B2 JP 2515923 B2 JP2515923 B2 JP 2515923B2 JP 2309690 A JP2309690 A JP 2309690A JP 30969090 A JP30969090 A JP 30969090A JP 2515923 B2 JP2515923 B2 JP 2515923B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- sealing
- metal cap
- metal
- metal ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の封止方法に関し、特にセラミッ
クパッケージICのメタルリングと金属キャップを封着す
る半導体装置の封止方法に関する。Description: TECHNICAL FIELD The present invention relates to a semiconductor device sealing method, and more particularly to a semiconductor device sealing method for sealing a metal ring and a metal cap of a ceramic package IC.
従来、この種の半導体装置の封止方法は、第２図及び
第３図に示すように、密ぺいされた密ぺいボックス７に
窒素ガスを流入し、セラミック基板61に固着されたメタ
ルリング62上に金属キャップ63置き、一対のローラ電極
３で金属キャップ63を押え、そのローラ電極３間にパル
ス電流を印加してメタルリング62と金属キャップ63を溶
接し封止していた。Conventionally, in this type of semiconductor device sealing method, as shown in FIGS. 2 and 3, a nitrogen gas is introduced into a tightly packed box 7 which is tightly packed, and a metal ring 62 fixed to a ceramic substrate 61 is used. The metal cap 63 is placed on the upper side, the metal cap 63 is pressed by the pair of roller electrodes 3, and a pulse current is applied between the roller electrodes 3 to weld and seal the metal ring 62 and the metal cap 63.
上述した従来の半導体装置の封止方法は、窒素ガス雰
囲気中で封止しているため、密ぺいされたボックス内に
半導体装置を出し入れする際に周囲の空気が混入し、メ
タルリングと金属キャップの溶接部が酸化しやすいとい
う欠点がある。In the conventional method for sealing a semiconductor device described above, since the semiconductor device is sealed in a nitrogen gas atmosphere, ambient air is mixed when the semiconductor device is taken in and out of a tightly packed box, and a metal ring and a metal cap are used. However, there is a drawback in that the welded part is easily oxidized.
また、封止されたキャビティ内が窒素ガス雰囲気であ
るため、パッケージの熱抵抗が高いという欠点がある。Further, since the sealed cavity is in a nitrogen gas atmosphere, there is a disadvantage that the thermal resistance of the package is high.
本発明の目的は、メタルリングと金属キャップの溶接
部の酸化がなく、パッケージの熱抵抗を低くすることの
できる半導体装置の封止方法を提供することにある。An object of the present invention is to provide a method for sealing a semiconductor device, which can reduce the thermal resistance of a package without oxidation of a welded portion of a metal ring and a metal cap.
本発明は、半導体素子を搭載したセラミック基板に固
着されたメタルリングと金属キャップを封着する半導体
装置のメタリングと金属キャップを封着する半導体装置
の封止方法において、前記セラミック基板に固着された
メタルリングと前記金属キャップの封着をフロロカーボ
ン液体の中で行う。The present invention provides a metal ring fixed to a ceramic substrate on which a semiconductor element is mounted and a metal ring of a semiconductor device for sealing a metal cap, and a semiconductor device sealing method for sealing a metal cap, wherein the metal ring is fixed to the ceramic substrate. The metal ring and the metal cap are sealed in a fluorocarbon liquid.
次に、本発明の実施例について図面を参照して説明す
る。Next, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例を説明する封止装置の概略
構成図、第３図は半導体装置の一例の断面図である。FIG. 1 is a schematic configuration diagram of a sealing device for explaining an embodiment of the present invention, and FIG. 3 is a sectional view of an example of a semiconductor device.
第１図及び第３図に示すように、まず、フロロカーボ
ン液５が充填された浴槽内の回転ステージ４上に半導体
素子67を搭載したセラミック基板61をセットする。As shown in FIGS. 1 and 3, first, the ceramic substrate 61 having the semiconductor element 67 mounted thereon is set on the rotary stage 4 in the bath filled with the fluorocarbon liquid 5.
次に、セラミック基板61に固着したメタルリング62上
に金属キャップ63を載置する。Next, the metal cap 63 is placed on the metal ring 62 fixed to the ceramic substrate 61.
次に、一対のローラ電極で金属キャップ63を押え、パ
ルス電流電源１から電極ヘッド２を介してローラ電極３
間にパルス電流を印加してメタルリング62と金属キャッ
プ63を溶接する。Next, the metal cap 63 is pressed by the pair of roller electrodes, and the roller electrode 3 is passed from the pulse current power supply 1 through the electrode head 2.
A pulse current is applied between them to weld the metal ring 62 and the metal cap 63.
以上説明したように本発明は、金属キャップとセラミ
ック基板に固着したメタルリングの溶接をフロロカーボ
ン液体の中で行うことにより、空気の混入による酸化を
防止できる効果がある。As described above, the present invention has an effect of preventing oxidation due to air inclusion by welding the metal cap and the metal ring fixed to the ceramic substrate in the fluorocarbon liquid.
また、パッケージのキャビティ内にフロロカーボンが
封入されることにより、半導体装置の熱抵抗を低減でき
る効果がある。Further, by enclosing the fluorocarbon in the cavity of the package, the thermal resistance of the semiconductor device can be reduced.
第１図は本発明の一実施例を説明する封止装置の概略構
成図、第２図は従来の半導体装置の封止方法を説明する
封止装置の一例の概略構成図、第３図は半導体装置の一
例の断面図である。 １……パルス電流電源、２……電極ヘッド、３……ロー
ラ電極、４……回転ステージ、５……フロロカーボン
液、６……半導体装置、７密ぺいボックス、61……セラ
ミック基板、62……メタルリング、63……金属キャッ
プ、64……ボンディングワイヤ、65……キャビティ、66
……外部リード、67……半導体素子。FIG. 1 is a schematic configuration diagram of a sealing device for explaining an embodiment of the present invention, FIG. 2 is a schematic configuration diagram of an example of a sealing device for explaining a conventional semiconductor device sealing method, and FIG. It is sectional drawing of an example of a semiconductor device. 1 ... Pulse current power supply, 2 ... Electrode head, 3 ... Roller electrode, 4 ... Rotating stage, 5 ... Fluorocarbon liquid, 6 ... Semiconductor device, 7 close box, 61 ... Ceramic substrate, 62 ... … Metal ring, 63… Metal cap, 64… Bonding wire, 65… Cavity, 66
…… External lead, 67 …… Semiconductor element.
Claims (1)
着されたメタルリングと金属キャップを封着する半導体
装置のメタリングと金属キャップを封着する半導体装置
の封止方法において、前記セラミック基板に固着された
メタルリングと前記金属キャップの封着をフロロカーボ
ン液体の中で行うことを特徴とする半導体装置の封止方
法。1. A method for sealing a metal ring and a metal cap fixed to a ceramic substrate on which a semiconductor element is mounted and a metal cap of a semiconductor device, and a method of sealing a semiconductor device, wherein a metal cap is sealed. A method of sealing a semiconductor device, wherein the metal ring and the metal cap are sealed in a fluorocarbon liquid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2309690A JP2515923B2 (en) | 1990-11-15 | 1990-11-15 | Method for sealing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2309690A JP2515923B2 (en) | 1990-11-15 | 1990-11-15 | Method for sealing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04180655A JPH04180655A (en) | 1992-06-26 |
| JP2515923B2 true JP2515923B2 (en) | 1996-07-10 |
Family
ID=17996112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2309690A Expired - Lifetime JP2515923B2 (en) | 1990-11-15 | 1990-11-15 | Method for sealing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2515923B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5413965A (en) * | 1993-09-13 | 1995-05-09 | Motorola, Inc. | Method of making microelectronic device package containing a liquid |
-
1990
- 1990-11-15 JP JP2309690A patent/JP2515923B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04180655A (en) | 1992-06-26 |
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