JPS63122250A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS63122250A JPS63122250A JP27015186A JP27015186A JPS63122250A JP S63122250 A JPS63122250 A JP S63122250A JP 27015186 A JP27015186 A JP 27015186A JP 27015186 A JP27015186 A JP 27015186A JP S63122250 A JPS63122250 A JP S63122250A
- Authority
- JP
- Japan
- Prior art keywords
- stem base
- metal
- metal stem
- semiconductor device
- iron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 45
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
- 239000011521 glass Substances 0.000 claims abstract description 10
- 230000002093 peripheral effect Effects 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 abstract description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract description 12
- 229910000531 Co alloy Inorganic materials 0.000 abstract description 7
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 abstract description 7
- 238000007789 sealing Methods 0.000 abstract description 7
- 229910052742 iron Inorganic materials 0.000 abstract description 6
- 238000003466 welding Methods 0.000 abstract description 6
- 229910045601 alloy Inorganic materials 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 229910052788 barium Inorganic materials 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract 2
- 230000000593 degrading effect Effects 0.000 abstract 2
- 229910001316 Ag alloy Inorganic materials 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000005219 brazing Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 5
- POIUWJQBRNEFGX-XAMSXPGMSA-N cathelicidin Chemical compound C([C@@H](C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CO)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H]([C@@H](C)CC)C(=O)NCC(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](CCC(N)=O)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CC(O)=O)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CC(N)=O)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](C(C)C)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)O)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CO)C(O)=O)NC(=O)[C@H](CC=1C=CC=CC=1)NC(=O)[C@H](CC(O)=O)NC(=O)CNC(=O)[C@H](CC(C)C)NC(=O)[C@@H](N)CC(C)C)C1=CC=CC=C1 POIUWJQBRNEFGX-XAMSXPGMSA-N 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000003353 gold alloy Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000570 Cupronickel Inorganic materials 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置に関し、特にキャン型のパッケージ
を用いた半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a semiconductor device using a can-type package.
従来、この種の半導体装置は、第５図に示すように、鉄
又は鉄・ニッケル・コバルト合金から成る金属ステムベ
ース２．とガラス４−．４ｂを介して鉄・ニッケル合金
又は鉄・ニッケル・コバルト合金から成る外部取出リー
ド３−．３ｂを気密かつ絶縁的にシールして気密封着体
を形成し、銅からなる放熱用の金属ブロック６を銀・−
合金でろう付けして固着した構造になっている。なお、
金属ステムベース２．の下面は鉄・ニッケル合金又は鉄
・ニッケル・コバルト合金から成るリード５と抵抗溶接
にて接続されている。Conventionally, this type of semiconductor device has a metal stem base 2 made of iron or an iron-nickel-cobalt alloy, as shown in FIG. and glass 4-. 4b, an external lead 3-. made of iron-nickel alloy or iron-nickel-cobalt alloy. 3b is hermetically and insulatively sealed to form an airtight seal, and a metal block 6 for heat dissipation made of copper is sealed with silver.
It has a structure that is secured by brazing with alloy. In addition,
Metal stem base 2. The lower surface of the lead 5 is connected by resistance welding to a lead 5 made of iron-nickel alloy or iron-nickel-cobalt alloy.
上述した従来の半導体装置は、気密封着体と金属ブロッ
クとを固着するろう材及び金属ステムベース上に半導体
素子を固着するソルダがキャップ封止部周辺まで広く流
出していたので、キャップを封止する際にろう材の散乱
が発生し、デバイス特性の劣化が生じるという問題点が
ある。更に、キャップ封止時のキャップの位置決め用ガ
イドがないので、キャップ封入作業がむつかしいという
問題点がある。In the conventional semiconductor device described above, the brazing material that fixes the hermetically sealed body and the metal block and the solder that fixes the semiconductor element on the metal stem base leak widely around the cap sealing part, so it is difficult to seal the cap. There is a problem in that scattering of the brazing material occurs when stopping, resulting in deterioration of device characteristics. Furthermore, since there is no guide for positioning the cap during cap sealing, there is a problem in that the cap sealing operation is difficult.
本発明の目的は、キャップ封入作業時におけるデバイス
特性の劣化を防止しかつ封入作業が容易にできる半導体
装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device that prevents deterioration of device characteristics during cap encapsulation work and facilitates encapsulation work.
本発明の半導体装置は、金属ステムベースと外部取出し
リードをガラスを介して気密かつ絶縁的にシールし前記
金属ステムベース上に搭載した半導体素子の電極と前記
外部取出しリードとを金属線で接続した半導体装置にお
いて、前記金属ステムベース上の周辺部に環状突起部を
設けて構成される。In the semiconductor device of the present invention, a metal stem base and an external lead are hermetically and insulatively sealed via glass, and electrodes of a semiconductor element mounted on the metal stem base are connected to the external lead by a metal wire. In the semiconductor device, an annular protrusion is provided on the periphery of the metal stem base.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の第１の実施例の断面図、第２図は第１
図の実施例の９０°異なる方向の断面図である。FIG. 1 is a sectional view of the first embodiment of the present invention, and FIG. 2 is a sectional view of the first embodiment of the present invention.
FIG. 3 is a cross-sectional view of the illustrated embodiment in a 90° different direction;
第１図及び第２図において、環状の突起部１が設けられ
ている鉄又は鉄・ニッケル・コバルト合金から成る金属
ステムベース２は、外部取出しリード３−．３ｂととも
にホウケイ酸ガラス又は、ソーダバリウム系のガラス４
−．４ｂで気密かっ絶縁的にシールされ、かつ、金属ス
テムベース２はリード５と抵抗溶接で接続されて気密封
着体を形成する。気密封着体には銅から成る放熱用の金
属ブロック６を銀・銅合金のろう材でろう付によって固
着して半導体用容器を形成する。1 and 2, a metal stem base 2 made of iron or an iron-nickel-cobalt alloy is provided with an annular protrusion 1, and an external lead 3-. In addition to 3b, borosilicate glass or soda barium glass 4
−． 4b, and the metal stem base 2 is connected to the lead 5 by resistance welding to form a hermetically sealed body. A metal block 6 made of copper for heat dissipation is fixed to the hermetically sealed body by brazing with a brazing filler metal of silver-copper alloy to form a semiconductor container.
この半導体用容器にヒートシンク７、半導体素子８−．
８ｂを金・シリコン、金・錫等から成る金合金系又は鉛
・錫系のソルダ９で固着し、更に半導体素子の電極から
外部取出しリード３．。In this semiconductor container, a heat sink 7, a semiconductor element 8-.
8b is fixed with a gold alloy based solder 9 made of gold/silicon, gold/tin, etc. or a lead/tin based solder 9, and an external lead 3. .
３ｂと金又はアルミニウム等の金属線１０でボンディン
グ接続した組立品に、鉄・ニッケル・コバルト合金から
成るシェル１１と透明平板ガラス１２を鉛系の低融点ガ
ラス１３で融着したキャップが抵抗溶接によって気密封
止された構造になっている。A shell 11 made of an iron-nickel-cobalt alloy and a cap made by fusing a transparent flat glass 12 with a lead-based low melting point glass 13 are attached by resistance welding. It has a hermetically sealed structure.
金属ステムベース２には環状の突起部１が設けられてい
るため、金属ブロック６を気密封着体と固着するろう材
及び半導体素子８−．８ｂを金属ステムベース２上にマ
ウントするソルダ９は、突起部１の底部周囲に沿って充
満して金属ステムベース２上面のキャップ封入箇所まで
流出することはなく、キャップ封入の際に生じるろう材
の散乱を防止することができる。又、突起部１がキャッ
プの位置決め用のガイドとなり封入工程における作業能
率の向上をはかることが可能になる。Since the metal stem base 2 is provided with an annular protrusion 1, the brazing material and semiconductor elements 8-. The solder 9 that mounts the solder 8b on the metal stem base 2 fills around the bottom of the protrusion 1 and does not flow out to the cap encapsulation area on the top surface of the metal stem base 2, and the solder 9 that is generated when the cap is encapsulated is solder 9. can prevent scattering. Further, the protrusion 1 serves as a guide for positioning the cap, making it possible to improve work efficiency in the sealing process.
第３図は本発明の第２の実施例の断面図である。FIG. 3 is a sectional view of a second embodiment of the invention.
第３図に示すように、第２の実施例は環状の突起部１４
が設けられた鉄又は鉄・ニッケル・コバルト合金から成
る金属ステムベース１５に外部取出しリード３−．３ｂ
をガラス４−．４ｂで気密かつ絶縁的にシールして半導
体容器を形成する。As shown in FIG. 3, the second embodiment has an annular protrusion 14.
A metal stem base 15 made of iron or iron-nickel-cobalt alloy is provided with external leads 3-. 3b
Glass 4-. 4b to form a semiconductor container.
この半導体容器に半導体素子１６．基板１−７を金合金
系のソルダ９でマウントし、更に半導体素子１６の電極
及び基板１７の電極から外部取出しリード３−．３ｂへ
、半導体素子１６の電極から基板１７の電極へ金属線１
０でボンディング接続した組立品に、鉄、鉄系合金、キ
ュープロ・ニッケル等から成る金属キャップ１８が抵抗
溶接によって気密封止された構造になっている。Semiconductor elements 16 are placed in this semiconductor container. The substrate 1-7 is mounted with a gold alloy solder 9, and external leads 3-. 3b, from the electrode of the semiconductor element 16 to the electrode of the substrate 17.
The metal cap 18 made of iron, iron-based alloy, cupro-nickel, etc. is hermetically sealed by resistance welding to the assembled product which is bonded and connected at 0.
半導体素子１６及び基板１７をソルダ９によってマウン
トする際のソルダの流出は、金属ステムベース１５の突
起部１４の底部周囲に沿って充満し、金属ステムベース
１５の上面の金属キャップ１８の封入箇所まで流出する
ことはなく、金属キャップ１８封大の際に生じるろう材
の散乱を防止することができるとともに、突起部１４が
金属キャップ１８の位置決め用のガイドとなり封入作業
が容易になる。When the semiconductor element 16 and the substrate 17 are mounted with the solder 9, the solder flows out along the bottom of the protrusion 14 of the metal stem base 15, and reaches the sealed part of the metal cap 18 on the top surface of the metal stem base 15. There is no leakage, and scattering of the brazing material that occurs when the metal cap 18 is sealed can be prevented, and the protrusion 14 serves as a guide for positioning the metal cap 18, making the sealing work easier.
第４図は本発明の第３の実施例の断面図である。“第４
図に示すように、第３の実施例では上述した第３図の第
２の実施例の突起部１４の代りに断面がＬ字状の環状の
突起部２０を金属ステムベース１５上にろう付して固着
している。金属キャップ１９は突起部２０の金属ステム
ベース１５の上面と平行をなす面に抵抗溶接により固着
される。FIG. 4 is a sectional view of a third embodiment of the invention. “Fourth
As shown in the figure, in the third embodiment, an annular protrusion 20 having an L-shaped cross section is brazed onto a metal stem base 15 in place of the protrusion 14 of the second embodiment shown in FIG. And it's stuck. The metal cap 19 is fixed to a surface of the projection 20 parallel to the upper surface of the metal stem base 15 by resistance welding.
以上説明したように本発明の半導体装置は、金属ステム
ベース上に環状の突起部を設けることにより、気密封着
体と放熱用の金属ブロックを固着するろう材及び半導体
素子を固着するソルダの流出を防止できるので、キャッ
プ封入の際に生じるろう材の散乱を防止でき、従って、
デバイス特性の劣化を防止できるという効果がある。As explained above, in the semiconductor device of the present invention, by providing an annular protrusion on the metal stem base, the brazing material for fixing the hermetic sealing body and the metal block for heat dissipation and the solder for fixing the semiconductor element can flow out. This prevents the scattering of the brazing filler metal that occurs during cap encapsulation.
This has the effect of preventing deterioration of device characteristics.
更に、突起部がキャップ位置決め用のガイドになるので
、封入作業を確実かつ短時間に完了できるという効果が
ある。Furthermore, since the protrusion serves as a guide for positioning the cap, there is an effect that the enclosing operation can be completed reliably and in a short time.
第１図は本発明の第１の実施例の断面図、第２図は第１
図の実施例の９０°異なる方向の断面図、第３図及び第
４図はそれぞれ本発明の第２及び第３の実施例の断面図
、第５図は従来の半導体装置の一例の断面図である。
１・・・突起部、２・・・金属ステムベース、３．。
３ｂ・・・外部取出しリード、４−．４ｂ・・・ガラス
、５・・・リード、６・・・金属ブロック、７・・・ヒ
ートシンク、８−．８ｂ・・・半導体素子、９・・・ソ
ルダ、１０・・・金属線、１１・・・シェル、１２・・
・透明平板ガラス、１３・・・低融点ガラス、１４・・
・突起部、１５・・・金属ステムベース、１６・・・半
導体素子、１７・・・基板、１８．１９・・・金属キャ
ップ、２０・・・突起部。
箭１躬
万２回
ｆｉ３目
万４図FIG. 1 is a sectional view of the first embodiment of the present invention, and FIG. 2 is a sectional view of the first embodiment of the present invention.
3 and 4 are sectional views of the second and third embodiments of the present invention, respectively. FIG. 5 is a sectional view of an example of a conventional semiconductor device. It is. 1... Protrusion, 2... Metal stem base, 3. . 3b...External extraction lead, 4-. 4b...Glass, 5...Lead, 6...Metal block, 7...Heat sink, 8-. 8b...Semiconductor element, 9...Solder, 10...Metal wire, 11...Shell, 12...
・Transparent flat glass, 13...Low melting point glass, 14...
-Protrusion, 15...Metal stem base, 16...Semiconductor element, 17...Substrate, 18.19...Metal cap, 20...Protrusion.箭 1man 2 times fi 3 eyes 4 figures
Claims (1)
て気密かつ絶縁的にシールし前記金属ステムベース上に
搭載した半導体素子の電極と前記外部取出しリードとを
金属線で接続した半導体装置において、前記金属ステム
ベース上の周辺部に環状の突起部を設けたことを特徴と
する半導体装置。In a semiconductor device in which a metal stem base and an external lead are hermetically and insulatively sealed via glass, and an electrode of a semiconductor element mounted on the metal stem base and the external lead are connected by a metal wire, the metal stem A semiconductor device characterized in that an annular protrusion is provided on a peripheral portion of a base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27015186A JPS63122250A (en) | 1986-11-12 | 1986-11-12 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27015186A JPS63122250A (en) | 1986-11-12 | 1986-11-12 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63122250A true JPS63122250A (en) | 1988-05-26 |
Family
ID=17482250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27015186A Pending JPS63122250A (en) | 1986-11-12 | 1986-11-12 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63122250A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7173331B2 (en) | 2003-02-06 | 2007-02-06 | Neomax Materials Co., Ltd. | Hermetic sealing cap and method of manufacturing the same |
| WO2011111126A1 (en) * | 2010-03-10 | 2011-09-15 | パナソニック株式会社 | Semiconductor device and method for manufacturing same |
| JP2021015849A (en) * | 2019-07-10 | 2021-02-12 | 住友電気工業株式会社 | Optical module and stem part |
-
1986
- 1986-11-12 JP JP27015186A patent/JPS63122250A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7173331B2 (en) | 2003-02-06 | 2007-02-06 | Neomax Materials Co., Ltd. | Hermetic sealing cap and method of manufacturing the same |
| WO2011111126A1 (en) * | 2010-03-10 | 2011-09-15 | パナソニック株式会社 | Semiconductor device and method for manufacturing same |
| JP4801797B1 (en) * | 2010-03-10 | 2011-10-26 | パナソニック株式会社 | Semiconductor device and manufacturing method thereof |
| US8384212B2 (en) | 2010-03-10 | 2013-02-26 | Panasonic Corporation | Semiconductor equipment and method of manufacturing the same |
| JP2021015849A (en) * | 2019-07-10 | 2021-02-12 | 住友電気工業株式会社 | Optical module and stem part |
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