JP2508660Y2 - Semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention relates to a semiconductor device, and more particularly to a mounting structure for mounting LSI chips with high density and high heat dissipation.

[Conventional technology]

Conventionally, there is a semiconductor device which is surface-mounted on a substrate. This type of semiconductor device is shown in FIGS. 4 (a) and 4 (b).
It will be explained with reference to FIG.

4 (a) and 4 (b) are views showing a conventional PGA type semiconductor device. FIG. 4 (a) is a plan view and FIG. 4 (b) is a front view. FIG. 5 is a perspective view showing a DIP type semiconductor device, FIG. 6 is a perspective view showing an SOP type semiconductor device, and FIG. 7 is a perspective view showing a state in which a conventional semiconductor device is mounted on a printed wiring board. In these figures, 1 is a PGA (pin grid array) type semiconductor device, and this PGA type semiconductor device 1 is a package body 1a in which a semiconductor chip (not shown) is incorporated.
And a plurality of pins 1b projecting downward from the lower part of the package body 1a. Reference numeral 2 denotes a heat sink, which is joined to the upper surface of the package body 1a.

3 is a DIP type semiconductor device, 4 is an SOP type semiconductor device, and these semiconductor devices are also package bodies 3a and 4a and leads 3b and 4b.
It consists of and. These leads 3b and 4b are provided on the side portions of the package bodies 3a and 4a, respectively.
A printed wiring board 5 is provided with a wiring pattern (not shown) on which the semiconductor devices are mounted.

Conventionally, as shown in FIG. 7, a plurality of semiconductor devices are mounted on the printed wiring board 5, and each semiconductor device is connected and fixed to the printed wiring board 5 by soldering. Further, for example, a PGA type semiconductor device 1 or the like which consumes a large amount of power and generates a large amount of heat is provided with a heat sink 2 as shown in FIGS. Was raised.

[Problems to be solved by the device]

However, in the conventional semiconductor device, the size of the entire package increases even though the size of the LSI chip is small. Therefore, even if a plurality of semiconductor devices are mounted on one printed wiring board 5 as described above, There was a limit to achieving high-density mounting. Moreover, the heat sink 2
In the case of using such members, if a large one is used in order to improve heat dissipation efficiency, there is a problem that the entire device becomes large.

[Means for solving the problem]

The semiconductor device according to the present invention is formed of a heat transfer material, is provided with a signal terminal and is mounted on a mother board for heat dissipation, and a wiring pattern connected to the signal terminal is provided and a semiconductor chip is inserted. A semiconductor chip provided with leads by tape carrier bonding, and a lead wiring pattern of the signal wiring laminated board. And the bottom surface of this semiconductor chip is bonded to the heat dissipation laminated substrate.

[Action]

A plurality of semiconductor chips are mounted on one set of the signal wiring laminated board and the heat radiation laminated board, and the heat of each semiconductor chip is directly transferred from the back surface of the semiconductor chip to the heat radiation wiring laminated board to be radiated.

〔Example〕

Hereinafter, an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 3 (a) and (b).

FIG. 1 is a perspective view showing a semiconductor device according to the present invention, and FIG.
FIG. 1 is an enlarged sectional view showing a main part of a semiconductor device according to the present invention. 3 (a) and 3 (b) are views showing a state in which the semiconductor device according to the present invention is mounted on a mother board. FIG. 3 (a) is a plan view and FIG. 3 (b) is a longitudinal sectional view. In these figures, 11 is a semiconductor device according to the present invention, and this semiconductor device 11 includes a signal wiring laminated substrate 12 and a heat dissipation laminated substrate 13
A package body is formed by stacking two substrates made of the above, and the LSI chip 1 is mounted on the signal wiring laminated substrate 12 on the upper side.
4 is electrically connected. A plurality of LSI chips 14 are mounted on the signal wiring laminated board 12.

The signal wiring laminated substrate 12 is made of a low dielectric constant material such as polyimide, and as shown in FIG. 2, signal line wiring patterns 15 are arranged on each layer and both front and back surfaces. Further, the signal wiring laminated board 12 is provided with a plurality of through holes 16 which are opened in a square shape on both front and back surfaces thereof. The opening dimension of the through hole 16 is set to be larger than the width dimension of the LSI chip 14.

LSI chip 14 is TAB (tape carrier bonding)
The one provided with the lead 14a is used (TAB form). The LSI chip 14 is inserted and mounted in each through hole 16 of the signal wiring laminated substrate 12,
The leads 14a are electrically connected to the wiring pattern on the signal wiring laminated board 12. The back surface of each LSI chip 14 is bonded to the upper surface of a heat dissipation laminated substrate 13 described later.

The heat dissipation laminated substrate 13 is composed of a ceramic multilayer substrate or a silicon multilayer substrate having a high thermal conductivity (low thermal resistance) characteristic. A large number of signal terminals 17 connected to a mother board, which will be described later, are projectingly provided on the lower part of the heat dissipation laminated board 13, and a power supply and a GND wiring pattern 18 are arranged in a plurality of layers inside. Reference numeral 19 is an internal wiring pattern for electrically connecting the signal line wiring pattern 15 of the signal wiring laminated substrate 12 and the signal terminal 17. The signal wiring laminated board 12 is bonded onto the heat dissipation laminated board 13.
When joining both boards, the signal line wiring pattern 15
A portion exposed on the lower surface of the signal wiring laminated substrate 12 in
The internal wiring pattern 19 is electrically connected to the exposed portion on the upper surface of the heat dissipation laminated substrate 13. That is, in this way, the signal line wiring pattern 15 is connected.
The leads 14a of the LSI chip 14 have signal line wiring patterns 15
And, it is connected to the signal terminal 17 via the internal wiring pattern 19. It should be noted that the LSI chip 14 is mounted after bonding both boards, or when the LSI wiring 14 is previously connected to the signal wiring laminated board 12 and the both boards are bonded together, the back surface thereof is bonded to the heat dissipation laminated board 13. Do it somehow.

Reference numeral 20 is a motherboard for mounting the semiconductor device 11, and this motherboard 20 is a signal terminal of the semiconductor device 11.
A wiring pattern (not shown) to which 17 is connected is formed, and an opening 20a for heat dissipation is provided at a position corresponding to the heat dissipation laminated substrate 13 of the semiconductor device 11. Semiconductor device 11
Is connected and fixed to a predetermined portion of the mother board 20 by soldering or the like.

Reference numeral 21 denotes a heat sink, which is joined to the back surface of the heat dissipation laminated substrate 13 in the semiconductor device 11. The heat sink 21 is attached to the mother board 20.
Projects from the opening 20a to the lower side of the motherboard 20. When the heat sink 21 is used in the semiconductor device 11 of the present invention, the heat dissipation effect can be further enhanced.

In the semiconductor device configured in this way, the LSI chip 14
Since the back surface of is directly bonded to the heat dissipation laminated substrate 13 which is a high heat conduction medium, a heat dissipation path having a small thermal resistance is formed.

Therefore, the heat generated by the LSI chip 14 is efficiently and directly transferred from the back surface of the LSI chip 14 to the heat dissipation laminated board 13, and is dissipated from the heat dissipation laminated board 13. Moreover, LSI
By adopting the TAB form which is the smallest size in terms of the above, many LSI chips 14 can be mounted without forming the substrates (the signal wiring laminated substrate 12 and the heat dissipation laminated substrate 13) in a large size.

[Effect of device]

As described above, the semiconductor device according to the present invention is provided with the heat dissipation laminated substrate which is formed of the heat transfer material, is provided with the signal terminal and is mounted on the motherboard, and the wiring pattern connected to the signal terminal. A semiconductor chip having a plurality of through-holes into which semiconductor chips are inserted and having a signal wiring laminated substrate joined onto the heat dissipation laminated substrate, and having leads provided by tape carrier bonding, Since the bottom surface of this semiconductor chip is connected to the wiring pattern of the laminated board and exposed to the through hole and the bottom surface of the semiconductor chip is joined to the heat dissipation laminated board, a plurality of semiconductor chips are mounted on one set of the signal wiring laminated board and the heat dissipation laminated board. Then, the heat of each semiconductor chip is directly transmitted from the back surface of the semiconductor chip to the heat radiation wiring laminated substrate and is radiated. Further, the mounting density can be increased by forming the semiconductor chip in the TAB form, which is the smallest size in terms of the size of the LSI. Therefore, in the semiconductor device of the present invention, it is possible to reduce the thermal resistance of the heat dissipation path for the semiconductor chip and increase the cooling efficiency while achieving high-density mounting. Therefore, it is possible to obtain a semiconductor device which is small and has excellent heat dissipation.

[Brief description of drawings]

FIG. 1 is a perspective view showing a semiconductor device according to the present invention, and FIG. 2 is an enlarged sectional view showing a main part of the semiconductor device according to the present invention. 3 (a) and 3 (b) are views showing a state in which the semiconductor device according to the present invention is mounted on a mother board. FIG. 3 (a) is a plan view and FIG. 3 (b) is a longitudinal sectional view. 4 (a) and 4 (b) are views showing a conventional PGA type semiconductor device. FIG. 4 (a) is a plan view and FIG. 4 (b) is a front view.
FIG. 5 is a perspective view showing a DIP type semiconductor device, FIG. 6 is a perspective view showing an SOP type semiconductor device, and FIG. 7 is a perspective view showing a state in which a conventional semiconductor device is mounted on a printed wiring board. 11 …… Semiconductor device, 12 …… Signal wiring laminated board, 13 …… Heat dissipation laminated board, 14 …… LSI chip, 15 …… Signal line wiring pattern, 16 …… Through hole, 17 …… Signal terminal, 20 …… Motherboard.

Claims (1)

(57) [Scope of utility model registration request] 1. A heat dissipation laminated substrate formed of a heat transfer material, provided with signal terminals and mounted on a mother board, and a through hole provided with a wiring pattern connected to the signal terminals and into which a semiconductor chip is inserted. A semiconductor chip having leads provided by tape carrier bonding, and connecting the leads to the wiring pattern of the signal wiring laminated board. And a bottom surface of the semiconductor chip is joined to the heat dissipation laminated substrate.