JP2508064Y2 - 光センサ― - Google Patents

光センサ―

Info

Publication number
JP2508064Y2
JP2508064Y2 JP1988169237U JP16923788U JP2508064Y2 JP 2508064 Y2 JP2508064 Y2 JP 2508064Y2 JP 1988169237 U JP1988169237 U JP 1988169237U JP 16923788 U JP16923788 U JP 16923788U JP 2508064 Y2 JP2508064 Y2 JP 2508064Y2
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
amorphous silicon
silicon semiconductor
optical sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1988169237U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0288257U (enrdf_load_stackoverflow
Inventor
文紀 山口
賢時 冨田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP1988169237U priority Critical patent/JP2508064Y2/ja
Publication of JPH0288257U publication Critical patent/JPH0288257U/ja
Application granted granted Critical
Publication of JP2508064Y2 publication Critical patent/JP2508064Y2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP1988169237U 1988-12-27 1988-12-27 光センサ― Expired - Fee Related JP2508064Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988169237U JP2508064Y2 (ja) 1988-12-27 1988-12-27 光センサ―

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988169237U JP2508064Y2 (ja) 1988-12-27 1988-12-27 光センサ―

Publications (2)

Publication Number Publication Date
JPH0288257U JPH0288257U (enrdf_load_stackoverflow) 1990-07-12
JP2508064Y2 true JP2508064Y2 (ja) 1996-08-21

Family

ID=31459113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988169237U Expired - Fee Related JP2508064Y2 (ja) 1988-12-27 1988-12-27 光センサ―

Country Status (1)

Country Link
JP (1) JP2508064Y2 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007165865A (ja) * 2005-11-18 2007-06-28 Semiconductor Energy Lab Co Ltd 光電変換装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60148176A (ja) * 1984-01-13 1985-08-05 Hitachi Maxell Ltd 半導体素子
JPS63281478A (ja) * 1987-05-13 1988-11-17 Sharp Corp 半導体受光装置

Also Published As

Publication number Publication date
JPH0288257U (enrdf_load_stackoverflow) 1990-07-12

Similar Documents

Publication Publication Date Title
JP3056200B1 (ja) 薄膜光電変換装置の製造方法
JP3469729B2 (ja) 太陽電池素子
US20090272423A1 (en) Multi-Junction Type Solar Cell Device
JP2931498B2 (ja) 太陽電池及びその製造方法
JPH04127580A (ja) 多接合型アモルファスシリコン系太陽電池
US20090165850A1 (en) Transparent conductive film and solar cell using the same
JP2009267222A (ja) 薄膜光電変換装置用透明導電膜付き基板の製造方法
JP2003197943A (ja) 太陽電池素子及び太陽電池モジュール
JP2508064Y2 (ja) 光センサ―
JPH0969643A (ja) 太陽電池及びその製造方法
JP3025392B2 (ja) 薄膜太陽電池とその製造方法
JPS6334632B2 (enrdf_load_stackoverflow)
JPS6322074B2 (enrdf_load_stackoverflow)
JPH0729648Y2 (ja) 光センサー
JP3382141B2 (ja) 光電変換素子
JPH065770B2 (ja) 耐熱性薄膜光電変換素子の製法
JP4124309B2 (ja) 光起電力装置の製造方法
JPH09181343A (ja) 光電変換装置
JPH05175529A (ja) アモルファスシリコン太陽電池
JP2004296550A (ja) 光起電力素子およびその製造方法
JPH0273672A (ja) 薄膜光電変換素子
JP2002299658A (ja) 光起電力素子
JPH0799777B2 (ja) 非晶質半導体素子
JPH08153888A (ja) 光電変換装置及びそれを用いた光センサ
JPH10144942A (ja) 非晶質半導体太陽電池

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees