JP2506769Y2 - イオン源電流導入端子 - Google Patents
イオン源電流導入端子Info
- Publication number
- JP2506769Y2 JP2506769Y2 JP1990058277U JP5827790U JP2506769Y2 JP 2506769 Y2 JP2506769 Y2 JP 2506769Y2 JP 1990058277 U JP1990058277 U JP 1990058277U JP 5827790 U JP5827790 U JP 5827790U JP 2506769 Y2 JP2506769 Y2 JP 2506769Y2
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- housing
- cooling
- ring
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004020 conductor Substances 0.000 claims description 35
- 238000001816 cooling Methods 0.000 claims description 35
- 230000002093 peripheral effect Effects 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 239000000498 cooling water Substances 0.000 claims description 13
- 238000003825 pressing Methods 0.000 claims description 11
- 230000037431 insertion Effects 0.000 claims description 10
- 238000003780 insertion Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 238000005219 brazing Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- 238000003466 welding Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- PTVDYARBVCBHSL-UHFFFAOYSA-N copper;hydrate Chemical compound O.[Cu] PTVDYARBVCBHSL-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1990058277U JP2506769Y2 (ja) | 1990-05-31 | 1990-05-31 | イオン源電流導入端子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1990058277U JP2506769Y2 (ja) | 1990-05-31 | 1990-05-31 | イオン源電流導入端子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0416858U JPH0416858U (enrdf_load_stackoverflow) | 1992-02-12 |
JP2506769Y2 true JP2506769Y2 (ja) | 1996-08-14 |
Family
ID=31583743
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1990058277U Expired - Lifetime JP2506769Y2 (ja) | 1990-05-31 | 1990-05-31 | イオン源電流導入端子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2506769Y2 (enrdf_load_stackoverflow) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6241657U (enrdf_load_stackoverflow) * | 1985-08-30 | 1987-03-12 | ||
JPS6370650U (enrdf_load_stackoverflow) * | 1986-10-27 | 1988-05-12 | ||
JPS6377248U (enrdf_load_stackoverflow) * | 1986-11-08 | 1988-05-23 |
-
1990
- 1990-05-31 JP JP1990058277U patent/JP2506769Y2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0416858U (enrdf_load_stackoverflow) | 1992-02-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8456001B2 (en) | Pressure-contact semiconductor device | |
US2825014A (en) | Semi-conductor device | |
KR940004782A (ko) | 턴오프 고전력 반도체 컴포넌트 | |
JPS5947754A (ja) | 半導体組立体 | |
US3252060A (en) | Variable compression contacted semiconductor devices | |
US3499095A (en) | Housing for disc-shaped semiconductor device | |
JP2506769Y2 (ja) | イオン源電流導入端子 | |
US3434018A (en) | Heat conductive mounting base for a semiconductor device | |
US4209799A (en) | Semiconductor mounting producing efficient heat dissipation | |
EP0115386B1 (en) | Rectifier device | |
JPH0222523B2 (enrdf_load_stackoverflow) | ||
JP2003530487A (ja) | 少なくとも1つの高周波貫通端子を備えた反応室 | |
US4041523A (en) | A controllable semiconductor component having massive heat dissipating conically shaped metal bodies | |
EP0408289A2 (en) | Noise proof capacitor unit for a vehicular generator | |
JPS6012287Y2 (ja) | 半導体装置 | |
US3209216A (en) | Sealed electrical devices | |
JPH07272656A (ja) | イオン源装置 | |
US4558257A (en) | Travelling wave tube arrangements | |
US3536966A (en) | Semiconductor device having an electrode with a laterally extending channel formed therein | |
JPS61279158A (ja) | 半導体スタツク装置 | |
JPS5943736Y2 (ja) | 半導体装置 | |
CN216120252U (zh) | 半导体工艺设备及其静电卡盘组件 | |
JP3419048B2 (ja) | 気密端子 | |
CA1213055A (en) | Travelling wave tube arrangements | |
JP2903976B2 (ja) | 気密絶縁端子 |