JP2504194B2 - Method for manufacturing resin-sealed semiconductor device - Google Patents

Method for manufacturing resin-sealed semiconductor device

Info

Publication number
JP2504194B2
JP2504194B2 JP1169501A JP16950189A JP2504194B2 JP 2504194 B2 JP2504194 B2 JP 2504194B2 JP 1169501 A JP1169501 A JP 1169501A JP 16950189 A JP16950189 A JP 16950189A JP 2504194 B2 JP2504194 B2 JP 2504194B2
Authority
JP
Japan
Prior art keywords
lead
thin plate
heat
external
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1169501A
Other languages
Japanese (ja)
Other versions
JPH0334358A (en
Inventor
俊秀 安井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP1169501A priority Critical patent/JP2504194B2/en
Publication of JPH0334358A publication Critical patent/JPH0334358A/en
Application granted granted Critical
Publication of JP2504194B2 publication Critical patent/JP2504194B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components
    • H05K3/3421Leaded components

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は樹脂封止型半導体装置の製造方法に関する。The present invention relates to a method for manufacturing a resin-sealed semiconductor device.

〔従来の技術〕 一般に、QEPやSOPと呼ばれるガルウィング状の外部リ
ードを有する樹脂封止型のICの組立工程においては、第
7図に示すように、リードフレーム1上にマウント,ボ
ンディングされた半導体チップを樹脂封止した後、樹脂
ダム部7及びダイバー部6を切断除去し、外部リード3
に半田メッキを施している。
[Prior Art] Generally, in a process of assembling a resin-sealed IC having gull-wing-shaped external leads called QEP or SOP, as shown in FIG. 7, a semiconductor mounted and bonded on a lead frame 1 is used. After the chip is sealed with resin, the resin dam portion 7 and the diver portion 6 are cut and removed, and the external lead 3
Solder plating is applied to.

従来、その後工程としては、第8図に示すように、外
部リード3の先端部を切断し、外部リード3をガルウィ
ング状に成形後、封止パッケージ2をリードフレーム1
に連結支持している吊りリード5の切断を行なって、第
9図に示すようなガルウィング状の外部リード3を有す
る個片のパッケージに分離した状態にて電気特性試験を
行なっている。
Conventionally, as a subsequent process, as shown in FIG. 8, the tip portion of the external lead 3 is cut, the external lead 3 is formed into a gull wing shape, and then the sealed package 2 is attached to the lead frame 1.
The suspension lead 5 connected to and supported by is cut, and the electrical characteristic test is performed in a state where the suspension lead 5 is separated into individual packages having the gull wing-shaped outer leads 3 as shown in FIG.

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

上述した従来のICの組立方法では、外部リードを切
断、成形した後電気特性試験を行なうため、試験時に外
部リードに何回か直接接触するコンタクト端子により外
部リードが変形することがあり、更にICはリードフレー
ムより分離されて個片状態にて選別工程を流れるため、
ハンドリング時に外部リードの変形が発生し易く、外部
リードの横曲がりや先端の浮きが生じQEPやSOPのような
表面実装型ICに重要な外部リードの平坦性(以下コプラ
ナリティと記す)が損なわれるという欠点がある。
In the conventional IC assembly method described above, the electrical characteristics test is performed after cutting and molding the external leads, so the external leads may be deformed by the contact terminals that are in direct contact with the external leads several times during the test. Is separated from the lead frame and flows through the sorting process in individual pieces,
Deformation of the external leads is likely to occur during handling, causing lateral bending of the external leads and floating of the tips, which impairs the flatness of the external leads (hereinafter referred to as coplanarity), which is important for surface mount ICs such as QEP and SOP. There are drawbacks.

特に、近年、高密度実装の要求により更に多ピン化、
小型化をはかるため、外部リードのファインピッチ化が
進み、リード間ピッチが0.65mm以下のICが増加する傾向
にあり、プリット基板上にスクリーン印刷する際の半田
ペースト厚は半田プリッジを防止するため薄くせざるを
得ず、半田付け性を向上するためにコプラナリティは0.
1mm以下が必要であり、ファインピッチ化により更に小
さな値に押えていく必要がある。
In particular, in recent years, due to the demand for high-density mounting, the number of pins has increased,
In order to miniaturize, fine pitch of external leads is progressing, and ICs with lead pitch of 0.65 mm or less are increasing.The solder paste thickness when screen-printing on the printed circuit board is to prevent solder bridging. There is no choice but to make it thinner, and the coplanarity is 0 to improve solderability.
1mm or less is required, and it is necessary to hold down to a smaller value by making fine pitch.

又、外部リードの強度もファインピッチ化に伴ない、
リード幅が小さくなるため従来に比較して弱くなる傾向
にあり、外部からの接触に対して容易にリード変形を起
こし易く、益々外部リードの横曲がりやコプラナリティ
悪化を招き、電気特性試験後の外部リの横曲がりやコプ
ラナリティの検査及び修正に多大な工数を費やすという
問題がある。
In addition, the strength of the external leads has become finer and finer.
Since the lead width is smaller, it tends to be weaker than in the past, and it is easy for lead deformation to occur due to external contact, which leads to lateral bending of the outer leads and deterioration of coplanarity. There is a problem that a large number of man-hours are spent on the inspection and correction of the lateral bending of the reed and the coplanarity.

〔課題を解決するための手段〕[Means for solving the problem]

本発明の樹脂封止型半導体装置の製造方法は、リード
フレームに半導体チップを固着し、結線して樹脂封止し
た後のリードフレームの封止樹脂より導出する外部リー
ドに絶縁性を有する耐熱薄板を耐熱樹脂にて接着し、外
部リード先端切断後は前記耐熱薄板にて外部リードを連
結した状態にて電気的特性試験及び前記封止樹脂と前記
耐熱薄板との間の外部リードを箇所を折り曲げることに
よりガルウィング状にする外部リードの成形を行ない、
しかる後、前記外部リードの先端部を切断することによ
り前記耐熱薄板を除去することを特徴とする。
A method for manufacturing a resin-encapsulated semiconductor device according to the present invention is a heat-resistant thin plate having an insulating property for external leads led out from a sealing resin of a lead frame after a semiconductor chip is fixed to a lead frame, connected and resin-sealed. With a heat-resistant resin, and after cutting the ends of the external leads, bend the external leads between the sealing resin and the heat-resistant thin plate at the electrical characteristics test with the external leads connected with the heat-resistant thin plate. By doing so, the outer lead is molded into a gull wing shape,
After that, the heat resistant thin plate is removed by cutting the tip of the external lead.

〔実施例〕〔Example〕

次に、本発明の実施例について図面を参照して説明す
る。
Next, embodiments of the present invention will be described with reference to the drawings.

第1図は本発明の第1の実施例である絶縁耐熱薄板を
接着した状態のリードフレームの平面図、第2図は外部
リード先端を切断した状態のリードフレームの平面図、
第3図は外部リードの成形を行なったICの斜視図、第4
図は絶縁耐熱薄板を切断除去した後のICの斜視図であ
る。
FIG. 1 is a plan view of a lead frame in which an insulating heat-resistant thin plate according to the first embodiment of the present invention is adhered, and FIG. 2 is a plan view of a lead frame in which external lead tips are cut off.
FIG. 3 is a perspective view of an IC in which external leads are molded, and FIG.
The figure is a perspective view of the IC after the insulating heat-resistant thin plate is cut and removed.

まず、第1図に示すように樹脂封止を行なったリード
フレーム1において、外部リード3上に各辺ごとに該外
部リード3を連結するようにポリイシド等の絶縁性を有
する耐熱薄板4を耐熱樹脂により接着する。樹脂ダム部
7及びダイバー部6を切断除去し、外部リード3の表面
に半田メッキを施した後、第2図に示すように、絶縁耐
熱薄板4より外側に位置する外部リード3をある一定幅
にて切断し、リードフレーム1より分離する。この際、
外部リード3は各辺ごとに絶縁耐熱薄板4のみにて連結
支持された状態となる。封止パッケージ2は各コーナに
設けられた吊りリード5のみによりリードフレーム1に
連結支持されており、この状態にて外部リード3にコン
タクト端子を接触させ電気的特性試験を行ない良品、不
良品に選別する。良品のICにおいては、第3図に示すよ
うに、外部リード3を絶縁耐熱薄板4にて連結した状態
にてガルウィング状に成形し、最後に外部リード3の先
端部を切断して絶縁耐熱薄板4を除去し、第4図に示す
ような所望の寸法及び形状を得る。
First, in a lead frame 1 which is resin-sealed as shown in FIG. 1, a heat-resistant thin plate 4 having an insulating property such as polyisid is heat-treated on the external leads 3 so that the external leads 3 are connected to each side. Bond with resin. After the resin dam portion 7 and the diver portion 6 are cut and removed, and the surfaces of the outer leads 3 are solder-plated, the outer leads 3 located outside the insulating heat-resistant thin plate 4 are fixed to a certain width as shown in FIG. And cut from the lead frame 1. On this occasion,
The external leads 3 are connected and supported only by the insulating and heat-resistant thin plate 4 on each side. The sealed package 2 is connected and supported to the lead frame 1 only by the suspension leads 5 provided at each corner, and in this state, the external lead 3 is brought into contact with a contact terminal to perform an electrical characteristic test, and is then judged as a good product or a defective product. Select. In a good IC, as shown in FIG. 3, the external leads 3 are connected to each other by the insulating and heat-resistant thin plate 4 and formed into a gull wing shape. Finally, the tips of the external leads 3 are cut to form the insulating and heat-resistant thin plate. 4 is removed to obtain the desired size and shape as shown in FIG.

本発明においては、ICを絶縁耐熱薄板にて各辺ごとの
外部リードを常に連結支持した状態にて、電気的特性試
験及びリード成形の様に直接外部リードに接触する際に
リード変形を発生させていた工程を流すことにより工程
中のリード曲がりや外部リード先端のばらつきを防止で
き、コプラナリティ等の向上により実装時の安定性の向
上を図ることができる。第5図は本発明の第2の実施例
である絶縁耐熱薄板を接着した状態のリードフレームの
平面図、第6図は外部リード先端を切断した状態のリー
ドフレームの平面図である。
In the present invention, in the state where the IC is always supported by connecting the external leads on each side with the insulating and heat-resistant thin plate, the lead deformation is caused when directly contacting the external leads as in the electrical characteristic test and the lead molding. It is possible to prevent the lead bending and the variation of the tips of the external leads during the process by passing the conventional process, and to improve the stability at the time of mounting by improving the coplanarity and the like. FIG. 5 is a plan view of the lead frame in the state in which the insulating and heat resistant thin plate according to the second embodiment of the present invention is adhered, and FIG. 6 is a plan view of the lead frame in which the tips of the external leads are cut.

第2の実施例においては、樹脂封止後のリードフレー
ム1の外部リード3上に四角の枠状の絶縁耐熱薄板8を
耐熱樹脂により接着固定する。樹脂ダム部7及びダイバ
ー部6を切断除去し、外部リード3の表面に半田メッキ
を施した後、第6図に示すように、外部リード3の先端
部を切断した状態にて電気的特性試験を行なう。この場
合は、絶縁耐熱薄板8が各辺の外部リード3のみでな
く、リードフレーム1上にも接着固定されているため、
外部リード3は横方向、上下方向共しっかりと固定され
ており、工程中のいかなる外部リード3への接触に対し
ても変形を防止できるという利点がある。
In the second embodiment, a rectangular frame-shaped insulating heat-resistant thin plate 8 is adhesively fixed to the external leads 3 of the lead frame 1 after resin sealing with a heat-resistant resin. The resin dam portion 7 and the diver portion 6 are cut and removed, and the surface of the external lead 3 is solder-plated. Then, as shown in FIG. Do. In this case, the insulating heat-resistant thin plate 8 is bonded and fixed not only on the outer leads 3 on each side but also on the lead frame 1.
The outer leads 3 are firmly fixed both in the horizontal direction and in the vertical direction, and there is an advantage in that they can be prevented from being deformed by any contact with the outer leads 3 during the process.

〔発明の効果〕〔The invention's effect〕

以上説明したように、本発明は樹脂封止後に絶縁耐熱
薄板を耐熱樹脂にて外部リード上に接着し、外部リード
先端をリードフレームより切断した後もこの絶縁耐熱薄
板により各辺単位で外部リードを連結固定した状態に
て、電気的特性試験やリード成形の様に直接外部リード
に接触する工程を流すことにより接触時やハンドリング
時のリード変形を防止することができる、リード横曲が
りをなくし、コプラナリティを向上させることが可能と
なる効果がある。
As described above, according to the present invention, the insulating heat-resistant thin plate is adhered onto the external lead with the heat-resistant resin after the resin sealing, and even after the tip of the external lead is cut from the lead frame, the insulating heat-resistant thin plate is used to separate the external lead by each side. With connecting and fixed, it is possible to prevent lead deformation at the time of contact or handling by flowing the step of directly contacting the external lead like electrical characteristic test or lead forming, eliminating lead lateral bending, There is an effect that the coplanarity can be improved.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の第1の実施例である絶縁耐熱薄板を接
着した状態のリードフレームの平面図、第2図は本発明
の第1の実施例の外部リード先端を切断した状態のリー
ドフレームの平面図、第3図は本発明の第1の実施例の
外部リードの成形を行なったICの斜視図、第4図は本発
明の第1の実施例の絶縁耐熱薄板を切断除去した後のIC
の斜視図、第5図は本発明の第2の実施例の絶縁耐熱薄
板を接着した状態のリードフレームの平面図、第6図は
本発明の第2の実施例の外部リード先端を切断した状態
のリードフレームの平面図、第7図は従来の樹脂封止後
のリードフレームの平面図、第8図は従来の外部リード
先端を切断した状態のリードフレームの平面図、第9図
は従来の外部リードの成形後のICの斜視図である。 1……リードフレーム、2……封止パッケージ、3……
外部リード、4……絶縁耐熱薄板、5……吊りリード、
6……ダイバー部、7……樹脂ダム部、8……絶縁耐熱
薄板。
FIG. 1 is a plan view of a lead frame in which an insulating heat-resistant thin plate according to a first embodiment of the present invention is adhered, and FIG. 2 is a lead in which external tips of the external lead of the first embodiment of the present invention are cut off. FIG. 3 is a plan view of the frame, FIG. 3 is a perspective view of an IC in which the external leads of the first embodiment of the present invention are molded, and FIG. 4 is the insulating heat-resistant thin plate of the first embodiment of the present invention cut and removed. Later IC
FIG. 5 is a plan view of the lead frame in which the insulating heat-resistant thin plate of the second embodiment of the present invention is adhered, and FIG. 6 is the outer lead tip of the second embodiment of the present invention cut off. FIG. 7 is a plan view of a conventional lead frame after resin encapsulation, FIG. 8 is a plan view of a conventional lead frame in which the external lead tips are cut, and FIG. 9 is a conventional view. FIG. 6 is a perspective view of the IC after molding the external lead of FIG. 1 ... Lead frame, 2 ... Sealed package, 3 ...
External lead, 4 ... Insulation heat resistant thin plate, 5 ... Hanging lead,
6 ... Diver part, 7 ... Resin dam part, 8 ... Insulation and heat resistant thin plate.

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】リードフレームに半導体チップを固着し、
結線して樹脂封止した後のリードフレームの封止樹脂よ
り導出する外部リードに絶縁性を有する耐熱薄板を耐熱
樹脂にて接着し、外部リード先端切断後は前記耐熱薄板
にて外部リードを連結した状態にて電気的特性試験及び
前記封止樹脂と前記耐熱薄板との間の外部リードの箇所
を折り曲げることによりガルウィング状にする外部リー
ドの成形を行ない、しかる後、前記外部リードの先端部
を切断することにより前記耐熱薄板を除去することを特
徴とする樹脂封止型半導体装置の製造方法。
1. A semiconductor chip is fixed to a lead frame,
After connecting and resin-sealing the lead frame, the heat-resistant thin plate with insulation is bonded to the external lead derived from the sealing resin of the lead frame, and after cutting the tip of the external lead, the heat-resistant thin plate connects the external lead. In this state, an electrical characteristic test and molding of the outer lead between the sealing resin and the heat-resistant thin plate to form a gull wing shape by bending the outer lead portion are performed. A method for manufacturing a resin-sealed semiconductor device, characterized in that the heat-resistant thin plate is removed by cutting.
JP1169501A 1989-06-29 1989-06-29 Method for manufacturing resin-sealed semiconductor device Expired - Fee Related JP2504194B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1169501A JP2504194B2 (en) 1989-06-29 1989-06-29 Method for manufacturing resin-sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1169501A JP2504194B2 (en) 1989-06-29 1989-06-29 Method for manufacturing resin-sealed semiconductor device

Publications (2)

Publication Number Publication Date
JPH0334358A JPH0334358A (en) 1991-02-14
JP2504194B2 true JP2504194B2 (en) 1996-06-05

Family

ID=15887689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1169501A Expired - Fee Related JP2504194B2 (en) 1989-06-29 1989-06-29 Method for manufacturing resin-sealed semiconductor device

Country Status (1)

Country Link
JP (1) JP2504194B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0590479A (en) * 1991-09-27 1993-04-09 Nec Kyushu Ltd Ic package

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5381073A (en) * 1976-12-27 1978-07-18 Hitachi Ltd Oroduction of resin seal type semiconductor device and lead frame used the same
JPS6124261A (en) * 1984-07-13 1986-02-01 Nec Corp Lead frame
JPS6489354A (en) * 1987-09-29 1989-04-03 Nec Corp Flat package

Also Published As

Publication number Publication date
JPH0334358A (en) 1991-02-14

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