JP2025541490A5 - - Google Patents
Info
- Publication number
- JP2025541490A5 JP2025541490A5 JP2025537123A JP2025537123A JP2025541490A5 JP 2025541490 A5 JP2025541490 A5 JP 2025541490A5 JP 2025537123 A JP2025537123 A JP 2025537123A JP 2025537123 A JP2025537123 A JP 2025537123A JP 2025541490 A5 JP2025541490 A5 JP 2025541490A5
- Authority
- JP
- Japan
- Prior art keywords
- metallization layer
- semiconductor device
- gate
- bonding pad
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202263434782P | 2022-12-22 | 2022-12-22 | |
| US63/434,782 | 2022-12-22 | ||
| US18/160,765 US20240213196A1 (en) | 2022-12-22 | 2023-01-27 | Power Semiconductor Devices Including Multiple Layer Metallization |
| US18/160,765 | 2023-01-27 | ||
| PCT/US2023/083034 WO2024137213A1 (en) | 2022-12-22 | 2023-12-08 | Power semiconductor devices including multiple layer metallization |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2025541490A JP2025541490A (ja) | 2025-12-18 |
| JP2025541490A5 true JP2025541490A5 (https=) | 2026-03-17 |
Family
ID=91583990
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025537123A Pending JP2025541490A (ja) | 2022-12-22 | 2023-12-08 | 複数層メタライゼーションを含むパワー半導体デバイス |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240213196A1 (https=) |
| EP (1) | EP4639626A1 (https=) |
| JP (1) | JP2025541490A (https=) |
| CN (1) | CN120548611A (https=) |
| WO (1) | WO2024137213A1 (https=) |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5661315A (en) * | 1995-12-28 | 1997-08-26 | Asea Brown Boveri Ag | Controllable power semiconductor component |
| US7705436B2 (en) * | 2007-08-06 | 2010-04-27 | Infineon Technologies Ag | Semiconductor device with semiconductor chip and method for producing it |
| US10522675B2 (en) * | 2012-01-25 | 2019-12-31 | Infineon Technologies Ag | Integrated circuit including field effect transistor structures with gate and field electrodes and methods for manufacturing and operating an integrated circuit |
| JP6416142B2 (ja) * | 2016-03-11 | 2018-10-31 | 株式会社東芝 | 半導体装置 |
| EP3531457B1 (en) * | 2018-02-26 | 2022-07-20 | Infineon Technologies Austria AG | Transistor device with gate resistor |
| EP3686929B1 (en) * | 2019-01-24 | 2023-09-20 | Infineon Technologies Dresden GmbH & Co . KG | Semiconductor die |
| US11164813B2 (en) * | 2019-04-11 | 2021-11-02 | Cree, Inc. | Transistor semiconductor die with increased active area |
| US10950699B2 (en) * | 2019-08-05 | 2021-03-16 | Vishay-Siliconix, LLC | Termination for vertical trench shielded devices |
| US11211324B2 (en) * | 2019-09-18 | 2021-12-28 | Intel Corporation | Via contact patterning method to increase edge placement error margin |
| EP3817066A1 (en) * | 2019-10-30 | 2021-05-05 | Infineon Technologies Austria AG | Semiconductor devices |
| CN117015852A (zh) * | 2021-03-15 | 2023-11-07 | 沃孚半导体公司 | 具有传感器元件的宽带隙半导体器件 |
-
2023
- 2023-01-27 US US18/160,765 patent/US20240213196A1/en active Pending
- 2023-12-08 WO PCT/US2023/083034 patent/WO2024137213A1/en not_active Ceased
- 2023-12-08 EP EP23908127.6A patent/EP4639626A1/en active Pending
- 2023-12-08 CN CN202380091912.1A patent/CN120548611A/zh active Pending
- 2023-12-08 JP JP2025537123A patent/JP2025541490A/ja active Pending
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