CN120548611A - 包括多层金属化的功率半导体器件 - Google Patents

包括多层金属化的功率半导体器件

Info

Publication number
CN120548611A
CN120548611A CN202380091912.1A CN202380091912A CN120548611A CN 120548611 A CN120548611 A CN 120548611A CN 202380091912 A CN202380091912 A CN 202380091912A CN 120548611 A CN120548611 A CN 120548611A
Authority
CN
China
Prior art keywords
semiconductor device
metallization layer
gate
layer
metallization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380091912.1A
Other languages
English (en)
Chinese (zh)
Inventor
托马斯·埃德加·哈林顿三世
布赖斯·麦克弗森
斯科特·艾伦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wofu Semiconductor Co ltd
Original Assignee
Wofu Semiconductor Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wofu Semiconductor Co ltd filed Critical Wofu Semiconductor Co ltd
Publication of CN120548611A publication Critical patent/CN120548611A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/273—Interconnections for measuring or testing, e.g. probe pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/936—Multiple bond pads having different shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/701—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding
    • H10W80/721—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding having structure or size changed during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/701—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding
    • H10W80/732—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding having shape changed during the connecting

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Wire Bonding (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN202380091912.1A 2022-12-22 2023-12-08 包括多层金属化的功率半导体器件 Pending CN120548611A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202263434782P 2022-12-22 2022-12-22
US63/434,782 2022-12-22
US18/160,765 US20240213196A1 (en) 2022-12-22 2023-01-27 Power Semiconductor Devices Including Multiple Layer Metallization
US18/160,765 2023-01-27
PCT/US2023/083034 WO2024137213A1 (en) 2022-12-22 2023-12-08 Power semiconductor devices including multiple layer metallization

Publications (1)

Publication Number Publication Date
CN120548611A true CN120548611A (zh) 2025-08-26

Family

ID=91583990

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380091912.1A Pending CN120548611A (zh) 2022-12-22 2023-12-08 包括多层金属化的功率半导体器件

Country Status (5)

Country Link
US (1) US20240213196A1 (https=)
EP (1) EP4639626A1 (https=)
JP (1) JP2025541490A (https=)
CN (1) CN120548611A (https=)
WO (1) WO2024137213A1 (https=)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661315A (en) * 1995-12-28 1997-08-26 Asea Brown Boveri Ag Controllable power semiconductor component
US7705436B2 (en) * 2007-08-06 2010-04-27 Infineon Technologies Ag Semiconductor device with semiconductor chip and method for producing it
US10522675B2 (en) * 2012-01-25 2019-12-31 Infineon Technologies Ag Integrated circuit including field effect transistor structures with gate and field electrodes and methods for manufacturing and operating an integrated circuit
JP6416142B2 (ja) * 2016-03-11 2018-10-31 株式会社東芝 半導体装置
EP3531457B1 (en) * 2018-02-26 2022-07-20 Infineon Technologies Austria AG Transistor device with gate resistor
EP3686929B1 (en) * 2019-01-24 2023-09-20 Infineon Technologies Dresden GmbH & Co . KG Semiconductor die
US11164813B2 (en) * 2019-04-11 2021-11-02 Cree, Inc. Transistor semiconductor die with increased active area
US10950699B2 (en) * 2019-08-05 2021-03-16 Vishay-Siliconix, LLC Termination for vertical trench shielded devices
US11211324B2 (en) * 2019-09-18 2021-12-28 Intel Corporation Via contact patterning method to increase edge placement error margin
EP3817066A1 (en) * 2019-10-30 2021-05-05 Infineon Technologies Austria AG Semiconductor devices
CN117015852A (zh) * 2021-03-15 2023-11-07 沃孚半导体公司 具有传感器元件的宽带隙半导体器件

Also Published As

Publication number Publication date
US20240213196A1 (en) 2024-06-27
JP2025541490A (ja) 2025-12-18
WO2024137213A1 (en) 2024-06-27
EP4639626A1 (en) 2025-10-29

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