JP2025512961A5 - - Google Patents

Info

Publication number
JP2025512961A5
JP2025512961A5 JP2024559204A JP2024559204A JP2025512961A5 JP 2025512961 A5 JP2025512961 A5 JP 2025512961A5 JP 2024559204 A JP2024559204 A JP 2024559204A JP 2024559204 A JP2024559204 A JP 2024559204A JP 2025512961 A5 JP2025512961 A5 JP 2025512961A5
Authority
JP
Japan
Prior art keywords
layer
magnetoresistive sensor
sensor according
sensing
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024559204A
Other languages
English (en)
Japanese (ja)
Other versions
JP2025512961A (ja
Filing date
Publication date
Priority claimed from EP22305459.4A external-priority patent/EP4257998A1/en
Application filed filed Critical
Publication of JP2025512961A publication Critical patent/JP2025512961A/ja
Publication of JP2025512961A5 publication Critical patent/JP2025512961A5/ja
Pending legal-status Critical Current

Links

JP2024559204A 2022-04-05 2023-04-04 面外磁場に対してセンシティブである磁気抵抗センサ Pending JP2025512961A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP22305459.4 2022-04-05
EP22305459.4A EP4257998A1 (en) 2022-04-05 2022-04-05 Magnetorestistive sensor sensitive to an out-of-plane magnetic field
PCT/EP2023/058767 WO2023194346A1 (en) 2022-04-05 2023-04-04 Magnetorestistive sensor sensitive to an out-of-plane magnetic field

Publications (2)

Publication Number Publication Date
JP2025512961A JP2025512961A (ja) 2025-04-22
JP2025512961A5 true JP2025512961A5 (https=) 2026-04-13

Family

ID=81308214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024559204A Pending JP2025512961A (ja) 2022-04-05 2023-04-04 面外磁場に対してセンシティブである磁気抵抗センサ

Country Status (6)

Country Link
US (1) US20250231259A1 (https=)
EP (2) EP4257998A1 (https=)
JP (1) JP2025512961A (https=)
KR (1) KR20240170567A (https=)
CN (1) CN119365785A (https=)
WO (1) WO2023194346A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250164585A1 (en) * 2023-11-16 2025-05-22 Allegro Microsystems, Llc Tmr sensor having tuned vortex response
US20250314720A1 (en) * 2024-04-05 2025-10-09 Allegro Microsystems, Llc Tmr sensor having vortex stack to enhance linearity
DE102024110511A1 (de) * 2024-04-15 2025-10-16 Infineon Technologies Ag Magnetoresistiver sensor
US20250372300A1 (en) * 2024-05-31 2025-12-04 Allegro Microsystems, Llc Perpendicular MR SAF
US20250383414A1 (en) * 2024-06-12 2025-12-18 Allegro Microsystems, Llc Tunnel magnetoresistance element and sensor having increased measurement range
US20260003017A1 (en) * 2024-06-26 2026-01-01 Allegro Microsystems, Llc Magnetoresistive element for sensing a magnetic field in an out-of-plane direction with increased sensitivity

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010007695A1 (ja) * 2008-07-14 2010-01-21 富士電機ホールディングス株式会社 スピンバルブ素子及びその駆動方法並びにこれらを用いる記憶装置
DE102015121753B4 (de) * 2015-12-14 2021-10-21 Infineon Technologies Ag Magnetsensorbauelement und Verfahren für ein Magnetsensorbauelement mit einer magnetoresistiven Struktur
EP3442042B1 (en) * 2017-08-10 2020-12-09 Commissariat à l'Energie Atomique et aux Energies Alternatives Synthetic antiferromagnetic layer, magnetic tunnel junction and spintronic device using said synthetic antiferromagnetic layer
JP7136340B2 (ja) * 2019-04-09 2022-09-13 株式会社村田製作所 磁気抵抗素子および磁気センサ
EP4012431B1 (en) * 2020-12-11 2025-07-02 Allegro MicroSystems, LLC Magnetoresistive element for sensing a magnetic field in a z-axis

Similar Documents

Publication Publication Date Title
JP2025512961A5 (https=)
CN107561460B (zh) 磁传感器装置和磁感测方法
US9207290B2 (en) Magnetic field sensor for sensing external magnetic field
US8125746B2 (en) Magnetic sensor with perpendicular anisotrophy free layer and side shields
CN104715765B (zh) 磁阻传感器屏蔽
CN107976644B (zh) 磁场检测装置
WO2013119638A1 (en) Planar three-axis magnetometer
JP5379860B2 (ja) 整列磁界を備えたgmrバイオセンサ
JP2009026400A (ja) 差動磁気抵抗効果型磁気ヘッド
KR20120045012A (ko) 복합 자기 실드를 갖는 자기 센서
WO2008072610A1 (ja) 磁気センサ及びそれを用いた磁気エンコーダ
JP2005019990A5 (https=)
JP3587678B2 (ja) 磁界センサ
CN101088019A (zh) 具有可调特性的桥式传感器
US8711524B2 (en) Patterned MR device with controlled shape anisotropy
JP5254514B2 (ja) 減少した電磁切換え磁場を持つ磁気抵抗検知器又は記憶素子
JP2008249556A (ja) 磁気センサ
CN119165414A (zh) 自旋霍尔磁电阻传感器及包括其的电子设备
JP6225748B2 (ja) 磁気センサ
JP4334914B2 (ja) 薄膜磁気センサ
CN109541503A (zh) 磁传感器
CN102623018A (zh) 一种基于垂直磁化自由层的磁性多层膜及磁性传感器
Bui et al. High-sensitivity planar Hall sensor based on simple gaint magneto resistance NiFe/Cu/NiFe structure for biochip application
JP2005108416A (ja) 磁気ヘッド
JP4614869B2 (ja) Cip−gmr素子、cip−gmr再生ヘッド、cip−gmr再生ヘッドの製造方法、ならびにcip−gmr素子におけるフリー層の形成方法