JP2025507454A - クロストーク低減層を含む積層弾性波（ａｗ）フィルタパッケージ及び関連する製造方法 - Google Patents

クロストーク低減層を含む積層弾性波（ａｗ）フィルタパッケージ及び関連する製造方法 Download PDF

Info

Publication number
JP2025507454A
JP2025507454A JP2024541258A JP2024541258A JP2025507454A JP 2025507454 A JP2025507454 A JP 2025507454A JP 2024541258 A JP2024541258 A JP 2024541258A JP 2024541258 A JP2024541258 A JP 2024541258A JP 2025507454 A JP2025507454 A JP 2025507454A
Authority
JP
Japan
Prior art keywords
substrate
layer
filter
metal layer
filter circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024541258A
Other languages
English (en)
Japanese (ja)
Other versions
JP2025507454A5 (https=
Inventor
コラサンティ、シモーネ
エアハルト－エゲラー、ナディーン
ハッツル、シュテファン・レオポルト
ホファー、マニュエル
キルヒホファー、ペーター
シュルツ、フォルカー
Original Assignee
アールエフ３６０・シンガポール・ピーティーイー・リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アールエフ３６０・シンガポール・ピーティーイー・リミテッド filed Critical アールエフ３６０・シンガポール・ピーティーイー・リミテッド
Publication of JP2025507454A publication Critical patent/JP2025507454A/ja
Publication of JP2025507454A5 publication Critical patent/JP2025507454A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02913—Measures for shielding against electromagnetic fields
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/105—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the BAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6489—Compensation of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H03H9/725—Duplexers

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP2024541258A 2022-02-04 2023-01-20 クロストーク低減層を含む積層弾性波（ａｗ）フィルタパッケージ及び関連する製造方法 Pending JP2025507454A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/649,965 US12261583B2 (en) 2022-02-04 2022-02-04 Stacked acoustic wave (AW) filter packages, including cross-talk reduction layers, and related fabrication methods
US17/649,965 2022-02-04
PCT/US2023/060987 WO2023150436A1 (en) 2022-02-04 2023-01-20 Stacked acoustic wave (aw) filter packages, including cross-talk reduction layers, and related fabrication methods

Publications (2)

Publication Number Publication Date
JP2025507454A true JP2025507454A (ja) 2025-03-19
JP2025507454A5 JP2025507454A5 (https=) 2026-01-09

Family

ID=85278566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024541258A Pending JP2025507454A (ja) 2022-02-04 2023-01-20 クロストーク低減層を含む積層弾性波（ａｗ）フィルタパッケージ及び関連する製造方法

Country Status (7)

Country Link
US (1) US12261583B2 (https=)
EP (1) EP4473660A1 (https=)
JP (1) JP2025507454A (https=)
KR (1) KR20240142413A (https=)
CN (1) CN118511431A (https=)
TW (1) TW202335433A (https=)
WO (1) WO2023150436A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7596849B1 (en) 2003-06-11 2009-10-06 Triquint Semiconductor, Inc. Method of assembling a wafer-level package filter
DE102007058951B4 (de) 2007-12-07 2020-03-26 Snaptrack, Inc. MEMS Package
CN107431478B (zh) * 2015-04-01 2020-10-13 株式会社村田制作所 双工器
WO2017110308A1 (ja) 2015-12-21 2017-06-29 株式会社村田製作所 弾性波装置
JP6547617B2 (ja) 2015-12-22 2019-07-24 株式会社村田製作所 電子部品
JP6556663B2 (ja) * 2016-05-26 2019-08-07 太陽誘電株式会社 弾性波デバイス
WO2019130943A1 (ja) 2017-12-26 2019-07-04 株式会社村田製作所 弾性波装置および弾性波モジュール

Also Published As

Publication number Publication date
WO2023150436A1 (en) 2023-08-10
TW202335433A (zh) 2023-09-01
EP4473660A1 (en) 2024-12-11
US12261583B2 (en) 2025-03-25
KR20240142413A (ko) 2024-09-30
CN118511431A (zh) 2024-08-16
US20230253950A1 (en) 2023-08-10

Similar Documents

Publication Publication Date Title
EP4460846A1 (en) Package substrates with embedded die-side, face-up deep trench capacitor(s) (dtc(s)), and related integrated circuit (ic) packages and fabrication methods
WO2022046511A1 (en) Integrated circuit (ic) package substrate with embedded trace substrate (ets) layer on a substrate, and related fabrication methods
KR20250073101A (ko) 더 높은 공진 주파수들을 위해 샌드위치 전극들을 갖는 벌크 음향파 디바이스들 및 관련 제조 방법들
US12261583B2 (en) Stacked acoustic wave (AW) filter packages, including cross-talk reduction layers, and related fabrication methods
WO2023069820A1 (en) Integrated circuit (ic) packages employing supplemental metal layer coupled to embedded metal traces in a die-side embedded trace substrate (ets) layer, and related fabrication methods
JP2024532100A (ja) 放熱のための強化熱伝導性キャビティフレームを採用する表面弾性波（ｓａｗ）フィルタパッケージ、及び関連する製造方法
WO2023049559A1 (en) Radio-frequency integrated circuits (rfics) including a porosified semiconductor isolation region to reduce noise interference and related fabrication methods
US20240421790A1 (en) DEVICES INCLUDING THROUGH-SUBSTRATE VIAS (TSVs) FOR BACKSIDE INTERCONNECTION, AND RELATED FABRICATION METHODS
US12334909B2 (en) Multi-level stacked acoustic wave (AW) filter packages and related fabrication methods
US20260066875A1 (en) Multi-mode saw filters with multi-track, unified insulating elements and related methods of manufacture
US20250047262A1 (en) Acoustic devices with integrated circuit elements and related fabrication methods
US12160952B2 (en) Providing a lower inductance path in a routing substrate for a capacitor, and related electronic devices and fabrication methods
US20250096117A1 (en) Integrated circuits including stacked thin film inductors and methods of fabrication
US12381174B2 (en) Integrated circuit (IC) packages employing wire bond channel over package substrate, and related fabrication methods
US12506459B2 (en) Bulk acoustic wave (BAW) device with oppositely polarized piezoelectric layers for higher order resonance and method of manufacture
WO2025058865A1 (en) Die package with guard structure to reduce or prevent material seepage into air cavity, and related fabrication methods
WO2025144098A1 (en) Bulk acoustic wave device including patterned acoustic mirror layers to reduce effective thickness and related methods
TW202520492A (zh) 具有每個具有多個接觸區域的凸塊互連件的積體電路（ｉｃ）晶片、相關ｉｃ封裝和製造方法
WO2023028393A1 (en) Stacked die integrated circuit (ic) package employing interposer for coupling an upper stacked die(s) to a package substrate for package height reduction, and related fabrication methods

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20251224

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20251224