CN118511431A - 包括串扰减少层的堆叠式声波(aw)滤波器封装件，以及相关制造方法 - Google Patents
包括串扰减少层的堆叠式声波(aw)滤波器封装件，以及相关制造方法 Download PDFInfo
- Publication number
- CN118511431A CN118511431A CN202380015942.4A CN202380015942A CN118511431A CN 118511431 A CN118511431 A CN 118511431A CN 202380015942 A CN202380015942 A CN 202380015942A CN 118511431 A CN118511431 A CN 118511431A
- Authority
- CN
- China
- Prior art keywords
- substrate
- filter circuit
- layer
- filter
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 230000009467 reduction Effects 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 229
- 229910052751 metal Inorganic materials 0.000 claims abstract description 207
- 239000002184 metal Substances 0.000 claims abstract description 207
- 238000001465 metallisation Methods 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims description 43
- 230000006854 communication Effects 0.000 claims description 16
- 238000004891 communication Methods 0.000 claims description 16
- 239000010936 titanium Substances 0.000 claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 8
- 238000010168 coupling process Methods 0.000 claims description 8
- 238000005859 coupling reaction Methods 0.000 claims description 8
- 230000001413 cellular effect Effects 0.000 claims description 5
- 230000000977 initiatory effect Effects 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 238000002955 isolation Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 3
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 3
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 229910012463 LiTaO3 Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000007175 bidirectional communication Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 239000006249 magnetic particle Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02913—Measures for shielding against electromagnetic fields
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/105—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the BAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6489—Compensation of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/649,965 US12261583B2 (en) | 2022-02-04 | 2022-02-04 | Stacked acoustic wave (AW) filter packages, including cross-talk reduction layers, and related fabrication methods |
| US17/649,965 | 2022-02-04 | ||
| PCT/US2023/060987 WO2023150436A1 (en) | 2022-02-04 | 2023-01-20 | Stacked acoustic wave (aw) filter packages, including cross-talk reduction layers, and related fabrication methods |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118511431A true CN118511431A (zh) | 2024-08-16 |
Family
ID=85278566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202380015942.4A Pending CN118511431A (zh) | 2022-02-04 | 2023-01-20 | 包括串扰减少层的堆叠式声波(aw)滤波器封装件，以及相关制造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12261583B2 (https=) |
| EP (1) | EP4473660A1 (https=) |
| JP (1) | JP2025507454A (https=) |
| KR (1) | KR20240142413A (https=) |
| CN (1) | CN118511431A (https=) |
| TW (1) | TW202335433A (https=) |
| WO (1) | WO2023150436A1 (https=) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7596849B1 (en) | 2003-06-11 | 2009-10-06 | Triquint Semiconductor, Inc. | Method of assembling a wafer-level package filter |
| DE102007058951B4 (de) | 2007-12-07 | 2020-03-26 | Snaptrack, Inc. | MEMS Package |
| CN107431478B (zh) * | 2015-04-01 | 2020-10-13 | 株式会社村田制作所 | 双工器 |
| WO2017110308A1 (ja) | 2015-12-21 | 2017-06-29 | 株式会社村田製作所 | 弾性波装置 |
| JP6547617B2 (ja) | 2015-12-22 | 2019-07-24 | 株式会社村田製作所 | 電子部品 |
| JP6556663B2 (ja) * | 2016-05-26 | 2019-08-07 | 太陽誘電株式会社 | 弾性波デバイス |
| WO2019130943A1 (ja) | 2017-12-26 | 2019-07-04 | 株式会社村田製作所 | 弾性波装置および弾性波モジュール |
-
2022
- 2022-02-04 US US17/649,965 patent/US12261583B2/en active Active
-
2023
- 2023-01-17 TW TW112101985A patent/TW202335433A/zh unknown
- 2023-01-20 CN CN202380015942.4A patent/CN118511431A/zh active Pending
- 2023-01-20 WO PCT/US2023/060987 patent/WO2023150436A1/en not_active Ceased
- 2023-01-20 JP JP2024541258A patent/JP2025507454A/ja active Pending
- 2023-01-20 KR KR1020247022293A patent/KR20240142413A/ko active Pending
- 2023-01-20 EP EP23705920.9A patent/EP4473660A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023150436A1 (en) | 2023-08-10 |
| TW202335433A (zh) | 2023-09-01 |
| JP2025507454A (ja) | 2025-03-19 |
| EP4473660A1 (en) | 2024-12-11 |
| US12261583B2 (en) | 2025-03-25 |
| KR20240142413A (ko) | 2024-09-30 |
| US20230253950A1 (en) | 2023-08-10 |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |