JP2025017799A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2025017799A
JP2025017799A JP2023121047A JP2023121047A JP2025017799A JP 2025017799 A JP2025017799 A JP 2025017799A JP 2023121047 A JP2023121047 A JP 2023121047A JP 2023121047 A JP2023121047 A JP 2023121047A JP 2025017799 A JP2025017799 A JP 2025017799A
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JP
Japan
Prior art keywords
region
layer
base layer
semiconductor substrate
fwd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023121047A
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English (en)
Japanese (ja)
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JP2025017799A5 (https=
Inventor
圭佑 本谷
Keisuke Mototani
茂樹 高橋
Shigeki Takahashi
智喜 赤井
Tomoki AKAI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2023121047A priority Critical patent/JP2025017799A/ja
Priority to CN202480048650.5A priority patent/CN121587089A/zh
Priority to PCT/JP2024/026322 priority patent/WO2025023245A1/ja
Publication of JP2025017799A publication Critical patent/JP2025017799A/ja
Publication of JP2025017799A5 publication Critical patent/JP2025017799A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs

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  • Electrodes Of Semiconductors (AREA)
JP2023121047A 2023-07-25 2023-07-25 半導体装置 Pending JP2025017799A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2023121047A JP2025017799A (ja) 2023-07-25 2023-07-25 半導体装置
CN202480048650.5A CN121587089A (zh) 2023-07-25 2024-07-23 半导体装置
PCT/JP2024/026322 WO2025023245A1 (ja) 2023-07-25 2024-07-23 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2023121047A JP2025017799A (ja) 2023-07-25 2023-07-25 半導体装置

Publications (2)

Publication Number Publication Date
JP2025017799A true JP2025017799A (ja) 2025-02-06
JP2025017799A5 JP2025017799A5 (https=) 2025-10-08

Family

ID=94375356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023121047A Pending JP2025017799A (ja) 2023-07-25 2023-07-25 半導体装置

Country Status (3)

Country Link
JP (1) JP2025017799A (https=)
CN (1) CN121587089A (https=)
WO (1) WO2025023245A1 (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4544360B2 (ja) * 2008-10-24 2010-09-15 トヨタ自動車株式会社 Ｉｇｂｔの製造方法
JP5686033B2 (ja) * 2011-04-27 2015-03-18 トヨタ自動車株式会社 半導体装置の製造方法
JP6063915B2 (ja) * 2014-12-12 2017-01-18 株式会社豊田中央研究所 逆導通ｉｇｂｔ

Also Published As

Publication number Publication date
CN121587089A (zh) 2026-02-27
WO2025023245A1 (ja) 2025-01-30

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