CN121587089A - 半导体装置 - Google Patents
半导体装置Info
- Publication number
- CN121587089A CN121587089A CN202480048650.5A CN202480048650A CN121587089A CN 121587089 A CN121587089 A CN 121587089A CN 202480048650 A CN202480048650 A CN 202480048650A CN 121587089 A CN121587089 A CN 121587089A
- Authority
- CN
- China
- Prior art keywords
- region
- layer
- base layer
- semiconductor substrate
- fwd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
Landscapes
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023-121047 | 2023-07-25 | ||
| JP2023121047A JP2025017799A (ja) | 2023-07-25 | 2023-07-25 | 半導体装置 |
| PCT/JP2024/026322 WO2025023245A1 (ja) | 2023-07-25 | 2024-07-23 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN121587089A true CN121587089A (zh) | 2026-02-27 |
Family
ID=94375356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202480048650.5A Pending CN121587089A (zh) | 2023-07-25 | 2024-07-23 | 半导体装置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2025017799A (https=) |
| CN (1) | CN121587089A (https=) |
| WO (1) | WO2025023245A1 (https=) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4544360B2 (ja) * | 2008-10-24 | 2010-09-15 | トヨタ自動車株式会社 | Ｉｇｂｔの製造方法 |
| JP5686033B2 (ja) * | 2011-04-27 | 2015-03-18 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
| JP6063915B2 (ja) * | 2014-12-12 | 2017-01-18 | 株式会社豊田中央研究所 | 逆導通ｉｇｂｔ |
-
2023
- 2023-07-25 JP JP2023121047A patent/JP2025017799A/ja active Pending
-
2024
- 2024-07-23 CN CN202480048650.5A patent/CN121587089A/zh active Pending
- 2024-07-23 WO PCT/JP2024/026322 patent/WO2025023245A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2025017799A (ja) | 2025-02-06 |
| WO2025023245A1 (ja) | 2025-01-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |