JP2024517055A5 - - Google Patents
Info
- Publication number
- JP2024517055A5 JP2024517055A5 JP2023555675A JP2023555675A JP2024517055A5 JP 2024517055 A5 JP2024517055 A5 JP 2024517055A5 JP 2023555675 A JP2023555675 A JP 2023555675A JP 2023555675 A JP2023555675 A JP 2023555675A JP 2024517055 A5 JP2024517055 A5 JP 2024517055A5
- Authority
- JP
- Japan
- Prior art keywords
- quality parameter
- parameter values
- generating
- sdw
- orientation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163177966P | 2021-04-22 | 2021-04-22 | |
| US63/177,966 | 2021-04-22 | ||
| US17/469,280 US12131959B2 (en) | 2021-04-22 | 2021-09-08 | Systems and methods for improved metrology for semiconductor device wafers |
| US17/469,280 | 2021-09-08 | ||
| PCT/US2021/053051 WO2022225549A1 (en) | 2021-04-22 | 2021-10-01 | Systems and methods for improved metrology for semiconductor device wafers |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2024517055A JP2024517055A (ja) | 2024-04-19 |
| JP2024517055A5 true JP2024517055A5 (enExample) | 2024-09-20 |
| JP7580627B2 JP7580627B2 (ja) | 2024-11-11 |
Family
ID=83694528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023555675A Active JP7580627B2 (ja) | 2021-04-22 | 2021-10-01 | 半導体デバイスウエハのための改良されたメトロロジーについてのシステムおよび方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12131959B2 (enExample) |
| JP (1) | JP7580627B2 (enExample) |
| KR (1) | KR102901219B1 (enExample) |
| CN (1) | CN116868069B (enExample) |
| TW (1) | TWI865831B (enExample) |
| WO (1) | WO2022225549A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12165930B2 (en) | 2021-06-03 | 2024-12-10 | Kla Corporation | Adaptive modeling misregistration measurement system and method |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3609896B2 (ja) * | 1996-04-16 | 2005-01-12 | 株式会社ルネサステクノロジ | 重ね合わせ測定誤差補正方法 |
| US6678038B2 (en) | 2001-08-03 | 2004-01-13 | Nikon Corporation | Apparatus and methods for detecting tool-induced shift in microlithography apparatus |
| US7804994B2 (en) | 2002-02-15 | 2010-09-28 | Kla-Tencor Technologies Corporation | Overlay metrology and control method |
| EP1570232B1 (en) | 2002-12-05 | 2016-11-02 | KLA-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| US7608468B1 (en) | 2003-07-02 | 2009-10-27 | Kla-Tencor Technologies, Corp. | Apparatus and methods for determining overlay and uses of same |
| JP4314082B2 (ja) | 2003-08-19 | 2009-08-12 | キヤノン株式会社 | アライメント方法 |
| US7656518B2 (en) | 2007-03-30 | 2010-02-02 | Asml Netherlands B.V. | Method of measuring asymmetry in a scatterometer, a method of measuring an overlay error in a substrate and a metrology apparatus |
| DE102007033345B4 (de) * | 2007-07-16 | 2009-07-16 | Vistec Semiconductor Systems Gmbh | Verfahren zur Korrektur von Abbildungsfehlern einer Messoptik einer Koordinaten-Messmaschine |
| WO2010069757A1 (en) | 2008-12-16 | 2010-06-24 | Asml Netherlands B.V. | Calibration method, inspection method and apparatus, lithographic apparatus, and lithographic processing cell |
| US9927718B2 (en) | 2010-08-03 | 2018-03-27 | Kla-Tencor Corporation | Multi-layer overlay metrology target and complimentary overlay metrology measurement systems |
| US8860941B2 (en) * | 2012-04-27 | 2014-10-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Tool induced shift reduction determination for overlay metrology |
| US8843875B2 (en) * | 2012-05-08 | 2014-09-23 | Kla-Tencor Corporation | Measurement model optimization based on parameter variations across a wafer |
| US9778213B2 (en) | 2013-08-19 | 2017-10-03 | Kla-Tencor Corporation | Metrology tool with combined XRF and SAXS capabilities |
| WO2015196168A1 (en) | 2014-06-21 | 2015-12-23 | Kla-Tencor Corporation | Compound imaging metrology targets |
| KR102253565B1 (ko) * | 2017-10-22 | 2021-05-18 | 케이엘에이 코포레이션 | 이미징 오버레이 계측에서 오버레이 오정렬 오차 평가치의 이용 |
| WO2020106784A1 (en) * | 2018-11-21 | 2020-05-28 | Kla Corporation | Process optimization using design of experiments and response surface models |
| EP3931865A4 (en) * | 2019-02-14 | 2023-02-15 | KLA Corporation | SYSTEM AND METHOD FOR MEASUREMENT OF MISREGISTRATION OF SEMICONDUCTOR DEVICE WAFERS USING INDUCED TOPOGRAPHY |
| JP7317131B2 (ja) | 2019-02-15 | 2023-07-28 | ケーエルエー コーポレイション | 結合された光および電子ビーム技術を使用する位置ずれ測定 |
| CN113519047B (zh) | 2019-03-25 | 2026-01-09 | 科磊股份有限公司 | 用于平整化弯曲半导体晶片的真空压紧设备 |
| CN113924638B (zh) * | 2019-03-28 | 2025-03-18 | 科磊股份有限公司 | 用于测量及校正半导体装置中的层之间的偏移的方法及用于其中的偏移目标 |
| CN113950644B (zh) * | 2019-06-20 | 2026-03-27 | 科磊股份有限公司 | 多工具参数集校准及偏移测量系统及方法 |
| JP7542561B2 (ja) * | 2019-06-25 | 2024-08-30 | ケーエルエー コーポレイション | 位置ずれの測定およびその改善のための関心領域の選択 |
| US11182892B2 (en) | 2019-09-16 | 2021-11-23 | Kla Corporation | Periodic semiconductor device misregistration metrology system and method |
-
2021
- 2021-09-08 US US17/469,280 patent/US12131959B2/en active Active
- 2021-10-01 CN CN202180094001.5A patent/CN116868069B/zh active Active
- 2021-10-01 KR KR1020237032686A patent/KR102901219B1/ko active Active
- 2021-10-01 WO PCT/US2021/053051 patent/WO2022225549A1/en not_active Ceased
- 2021-10-01 JP JP2023555675A patent/JP7580627B2/ja active Active
- 2021-10-07 TW TW110137265A patent/TWI865831B/zh active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI409910B (zh) | 半導體製造方法與裝置 | |
| CN106569150B (zh) | 一种用于三轴磁传感器简易校正的两步校正方法 | |
| JP6598782B2 (ja) | 位置敏感基板デバイス | |
| US9255780B2 (en) | Method for measuring thickness of film on wafer edge | |
| TWI685906B (zh) | 用於半導體製程控制之圖案化晶圓幾何量測之方法及系統 | |
| US8625083B2 (en) | Thin film stress measurement 3D anisotropic volume | |
| CN110289224B (zh) | 一种精确监控并改善方块电阻量测稳定性的方法 | |
| CN103776345A (zh) | 一种天线主面精度样板检测方法及装置 | |
| CN104425302A (zh) | 半导体器件的缺陷检测方法和装置 | |
| CN104075830B (zh) | 一种大尺寸磨削晶圆残余应力测试方法 | |
| CN112713102A (zh) | 一种图形对位检测方法 | |
| JP2022521490A5 (enExample) | ||
| TW202117880A (zh) | 多工具參數集校準和偏移測量系統及方法 | |
| CN107403740B (zh) | 一种确定离子注入机注入角度偏差的方法 | |
| CN109030544B (zh) | 一种基于微型晶体晶格参数变化的最高温度测量方法 | |
| CN102879103A (zh) | 偏振检测装置器件误差的校正方法 | |
| WO2007064515A3 (en) | Means to establish orientation of ion beam to wafer and correct angle errors | |
| CN111816583A (zh) | 掺杂多晶硅薄膜的应力监控方法及半导体器件的制造方法 | |
| CN113496905A (zh) | 一种离子注入角度的监测方法 | |
| WO2018090637A1 (zh) | 一种极大磁场测量方法及装置 | |
| CN112158797A (zh) | 一种晶片键合过程中对准检测方法 | |
| CN108091560B (zh) | 优化不同透光率下浅槽隔离刻蚀形貌的方法 | |
| CN105223785A (zh) | 提高晶片产品套准精度的方法 | |
| CN116093001A (zh) | 相对于基座校准硅片的位置的装置、方法及外延设备 | |
| TWI846838B (zh) | 偏移量測之動態改善 |