CN116868069B - 用于半导体装置晶片的改进计量的系统及方法 - Google Patents

用于半导体装置晶片的改进计量的系统及方法 Download PDF

Info

Publication number
CN116868069B
CN116868069B CN202180094001.5A CN202180094001A CN116868069B CN 116868069 B CN116868069 B CN 116868069B CN 202180094001 A CN202180094001 A CN 202180094001A CN 116868069 B CN116868069 B CN 116868069B
Authority
CN
China
Prior art keywords
measurement
orientation
site
quality parameter
sdw
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202180094001.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN116868069A (zh
Inventor
L·叶鲁舍米
D·内格里
O·巴沙尔
Y·西蒙
A·玛纳森
N·本大卫
Y·于齐耶尔
E·拉维特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Tencor Corp filed Critical KLA Tencor Corp
Publication of CN116868069A publication Critical patent/CN116868069A/zh
Application granted granted Critical
Publication of CN116868069B publication Critical patent/CN116868069B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05BCONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00Program-control systems
    • G05B19/02Program-control systems electric
    • G05B19/418Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
    • G05B19/41875Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM] characterised by quality surveillance of production
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27Structural arrangements therefor
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05BCONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00Program-control systems
    • G05B2219/30Nc systems
    • G05B2219/45Nc applications
    • G05B2219/45031Manufacturing semiconductor wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Automation & Control Theory (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
CN202180094001.5A 2021-04-22 2021-10-01 用于半导体装置晶片的改进计量的系统及方法 Active CN116868069B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202163177966P 2021-04-22 2021-04-22
US63/177,966 2021-04-22
US17/469,280 US12131959B2 (en) 2021-04-22 2021-09-08 Systems and methods for improved metrology for semiconductor device wafers
US17/469,280 2021-09-08
PCT/US2021/053051 WO2022225549A1 (en) 2021-04-22 2021-10-01 Systems and methods for improved metrology for semiconductor device wafers

Publications (2)

Publication Number Publication Date
CN116868069A CN116868069A (zh) 2023-10-10
CN116868069B true CN116868069B (zh) 2024-09-06

Family

ID=83694528

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180094001.5A Active CN116868069B (zh) 2021-04-22 2021-10-01 用于半导体装置晶片的改进计量的系统及方法

Country Status (6)

Country Link
US (1) US12131959B2 (enExample)
JP (1) JP7580627B2 (enExample)
KR (1) KR102901219B1 (enExample)
CN (1) CN116868069B (enExample)
TW (1) TWI865831B (enExample)
WO (1) WO2022225549A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12165930B2 (en) 2021-06-03 2024-12-10 Kla Corporation Adaptive modeling misregistration measurement system and method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4314082B2 (ja) * 2003-08-19 2009-08-12 キヤノン株式会社 アライメント方法
CN103377963A (zh) * 2012-04-27 2013-10-30 台湾积体电路制造股份有限公司 用于叠加度量的工具所致移位减少量的确定

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3609896B2 (ja) * 1996-04-16 2005-01-12 株式会社ルネサステクノロジ 重ね合わせ測定誤差補正方法
US6678038B2 (en) 2001-08-03 2004-01-13 Nikon Corporation Apparatus and methods for detecting tool-induced shift in microlithography apparatus
US7804994B2 (en) 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
EP1570232B1 (en) 2002-12-05 2016-11-02 KLA-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7608468B1 (en) 2003-07-02 2009-10-27 Kla-Tencor Technologies, Corp. Apparatus and methods for determining overlay and uses of same
US7656518B2 (en) 2007-03-30 2010-02-02 Asml Netherlands B.V. Method of measuring asymmetry in a scatterometer, a method of measuring an overlay error in a substrate and a metrology apparatus
DE102007033345B4 (de) * 2007-07-16 2009-07-16 Vistec Semiconductor Systems Gmbh Verfahren zur Korrektur von Abbildungsfehlern einer Messoptik einer Koordinaten-Messmaschine
WO2010069757A1 (en) 2008-12-16 2010-06-24 Asml Netherlands B.V. Calibration method, inspection method and apparatus, lithographic apparatus, and lithographic processing cell
US9927718B2 (en) 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
US8843875B2 (en) * 2012-05-08 2014-09-23 Kla-Tencor Corporation Measurement model optimization based on parameter variations across a wafer
US9778213B2 (en) 2013-08-19 2017-10-03 Kla-Tencor Corporation Metrology tool with combined XRF and SAXS capabilities
WO2015196168A1 (en) 2014-06-21 2015-12-23 Kla-Tencor Corporation Compound imaging metrology targets
KR102253565B1 (ko) * 2017-10-22 2021-05-18 케이엘에이 코포레이션 이미징 오버레이 계측에서 오버레이 오정렬 오차 평가치의 이용
WO2020106784A1 (en) * 2018-11-21 2020-05-28 Kla Corporation Process optimization using design of experiments and response surface models
EP3931865A4 (en) * 2019-02-14 2023-02-15 KLA Corporation SYSTEM AND METHOD FOR MEASUREMENT OF MISREGISTRATION OF SEMICONDUCTOR DEVICE WAFERS USING INDUCED TOPOGRAPHY
JP7317131B2 (ja) 2019-02-15 2023-07-28 ケーエルエー コーポレイション 結合された光および電子ビーム技術を使用する位置ずれ測定
CN113519047B (zh) 2019-03-25 2026-01-09 科磊股份有限公司 用于平整化弯曲半导体晶片的真空压紧设备
CN113924638B (zh) * 2019-03-28 2025-03-18 科磊股份有限公司 用于测量及校正半导体装置中的层之间的偏移的方法及用于其中的偏移目标
CN113950644B (zh) * 2019-06-20 2026-03-27 科磊股份有限公司 多工具参数集校准及偏移测量系统及方法
JP7542561B2 (ja) * 2019-06-25 2024-08-30 ケーエルエー コーポレイション 位置ずれの測定およびその改善のための関心領域の選択
US11182892B2 (en) 2019-09-16 2021-11-23 Kla Corporation Periodic semiconductor device misregistration metrology system and method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4314082B2 (ja) * 2003-08-19 2009-08-12 キヤノン株式会社 アライメント方法
CN103377963A (zh) * 2012-04-27 2013-10-30 台湾积体电路制造股份有限公司 用于叠加度量的工具所致移位减少量的确定

Also Published As

Publication number Publication date
WO2022225549A1 (en) 2022-10-27
KR102901219B1 (ko) 2025-12-16
KR20230174215A (ko) 2023-12-27
JP2024517055A (ja) 2024-04-19
TW202245090A (zh) 2022-11-16
JP7580627B2 (ja) 2024-11-11
US12131959B2 (en) 2024-10-29
TWI865831B (zh) 2024-12-11
US20220344218A1 (en) 2022-10-27
CN116868069A (zh) 2023-10-10

Similar Documents

Publication Publication Date Title
US10025193B2 (en) Lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product
CN108431695B (zh) 控制图案形成过程的方法、器件制造方法、用于光刻设备的控制系统以及光刻设备
US7858404B2 (en) Measurement of overlay offset in semiconductor processing
US11669017B2 (en) Method for controlling a manufacturing apparatus and associated apparatuses
EP3312672A1 (en) Methods of determining corrections for a patterning process, device manufacturing method, control system for a lithographic apparatus and lithographic apparatus
CN114270271A (zh) 用于控制光刻装置的方法
US20250199419A1 (en) Methods of metrology and associated devices
TWI865831B (zh) 用於半導體裝置晶圓之改良計量的系統及方法
US8088539B2 (en) Exposure aligning method and exposure apparatus
KR102755839B1 (ko) 개선된 오버레이 오차 계측을 위한 유도 변위
JP2003512738A (ja) レチクル、ウェーハ、測定ステッパおよび予防保守方法
KR102917537B1 (ko) 계측 툴의 회전 교정을 위한 시스템 및 방법
US9753373B2 (en) Lithography system and semiconductor processing process
JP2006286747A (ja) 位置合わせ方法、その装置、プロセス制御装置およびプログラム
US7442474B2 (en) Reticle for determining rotational error
US20010031406A1 (en) Photomask and exposure method
TW202509457A (zh) 與疊對相關之度量衡方法
KR20240159871A (ko) 분할 타겟을 사용한 스티칭 오차의 측정
JP2000077328A (ja) 位置合わせ装置および方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant