JP2024507177A - 金属含有薄膜を堆積するための第６族アミジネートパドルホイール型化合物 - Google Patents

金属含有薄膜を堆積するための第６族アミジネートパドルホイール型化合物 Download PDF

Info

Publication number
JP2024507177A
JP2024507177A JP2023548886A JP2023548886A JP2024507177A JP 2024507177 A JP2024507177 A JP 2024507177A JP 2023548886 A JP2023548886 A JP 2023548886A JP 2023548886 A JP2023548886 A JP 2023548886A JP 2024507177 A JP2024507177 A JP 2024507177A
Authority
JP
Japan
Prior art keywords
precursor
formula
substituted
plasma
transition metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023548886A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024507177A5 (https=
Inventor
コイル・ジェイソン・ピー
サヴォ・マイケル・ティー
イワノフ・セルゲイ・ヴェー
クーパー・アラン・シー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
Merck Patent GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent GmbH filed Critical Merck Patent GmbH
Publication of JP2024507177A publication Critical patent/JP2024507177A/ja
Publication of JP2024507177A5 publication Critical patent/JP2024507177A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
    • C07F11/005—Compounds containing elements of Groups 6 or 16 of the Periodic Table compounds without a metal-carbon linkage
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C211/00—Compounds containing amino groups bound to a carbon skeleton
    • C07C211/65—Metal complexes of amines
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C279/00—Derivatives of guanidine, i.e. compounds containing the group, the singly-bound nitrogen atoms not being part of nitro or nitroso groups
    • C07C279/02—Guanidine; Salts, complexes or addition compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D207/00—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D207/00—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D207/02—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom
    • C07D207/04—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having no double bonds between ring members or between ring members and non-ring members
    • C07D207/10—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having no double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D207/14—Nitrogen atoms not forming part of a nitro radical
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/36—Carbonitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2023548886A 2021-02-15 2022-02-11 金属含有薄膜を堆積するための第６族アミジネートパドルホイール型化合物 Pending JP2024507177A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163149524P 2021-02-15 2021-02-15
US63/149,524 2021-02-15
PCT/US2022/016044 WO2022173999A1 (en) 2021-02-15 2022-02-11 Group 6 amidinate paddlewheel compounds for deposition of metal containing thin films

Publications (2)

Publication Number Publication Date
JP2024507177A true JP2024507177A (ja) 2024-02-16
JP2024507177A5 JP2024507177A5 (https=) 2024-10-17

Family

ID=80461102

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023548886A Pending JP2024507177A (ja) 2021-02-15 2022-02-11 金属含有薄膜を堆積するための第６族アミジネートパドルホイール型化合物

Country Status (5)

Country Link
US (1) US20240166676A1 (https=)
JP (1) JP2024507177A (https=)
KR (1) KR20230144628A (https=)
CN (1) CN116917536A (https=)
WO (1) WO2022173999A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020185618A1 (en) * 2019-03-11 2020-09-17 Lam Research Corporation Precursors for deposition of molybdenum-containing films

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101121734A (zh) * 2006-07-31 2008-02-13 罗门哈斯电子材料有限公司 有机金属化合物
US8471049B2 (en) * 2008-12-10 2013-06-25 Air Product And Chemicals, Inc. Precursors for depositing group 4 metal-containing films
US20110256314A1 (en) * 2009-10-23 2011-10-20 Air Products And Chemicals, Inc. Methods for deposition of group 4 metal containing films
EP3046926A1 (en) * 2013-09-19 2016-07-27 Arizona Board of Regents for the University of Arizona Compounds having low ionization energy

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020185618A1 (en) * 2019-03-11 2020-09-17 Lam Research Corporation Precursors for deposition of molybdenum-containing films

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
LICHTENBERGER DENNIS L ET AL: "QUADRUPLE METAL-METAL BONDS WITH STRONG DONOR LIGANDS. ULTRAVIOLET PHOTOELECTRON 以下備考", JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, vol. VOL.121, NR.51, JPN5024009534, December 1999 (1999-12-01), pages 12167 - 12176, ISSN: 0005836394 *

Also Published As

Publication number Publication date
KR20230144628A (ko) 2023-10-16
CN116917536A (zh) 2023-10-20
US20240166676A1 (en) 2024-05-23
TW202246294A (zh) 2022-12-01
WO2022173999A1 (en) 2022-08-18

Similar Documents

Publication Publication Date Title
KR101659725B1 (ko) 휘발성 디하이드로피라지닐 및 디하이드로피라진 금속 착화합물
US8357784B2 (en) Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same
TWI894397B (zh) 鑭系及類鑭系過渡金屬之錯合物
CN114269762A (zh) 用于薄膜沉积的新v族和vi族过渡金属前体
KR20240125642A (ko) 산화비스무트 함유 박막을 위한 알킬 및 아릴 헤테로렙틱 비스무트 전구체
US20260035396A1 (en) Liquid molybdenum bis(arene) compositions for deposition of molybdenum-containing films
JP2024507177A (ja) 金属含有薄膜を堆積するための第６族アミジネートパドルホイール型化合物
TWI916501B (zh) 用於沉積含金屬之薄膜的第6族脒鹽槳舵狀化合物
JP2021147395A (ja) 有機金属付加化合物及びそれを利用した集積回路素子の製造方法
US20240067663A1 (en) Yttrium compound, source material for forming yttrium-containing film, and method of manufacturing integrated circuit device using the same
KR20250036206A (ko) 2D 전이 금속 디설파이드 및/또는 디셀레나이드 필름의 성장 중 H2S 또는 H2Se의 인-시츄 생산
KR20260019524A (ko) 화합물, 박막 형성용 원료, 박막 및 박막의 제조 방법
EP3647460B1 (en) Thin film production method and novel compound
KR20250054807A (ko) 기상 박막 증착 공정을 위한 전구체로서의 다중 치환 시클로펜타디에닐 희토류 착물
KR20250103680A (ko) 선택적 증착을 위한 고순도 알키닐 아민
KR20250142364A (ko) 화합물, 박막 형성용 원료, 박막 및 박막의 제조 방법
WO2025219479A1 (en) Metal compounds for ald applications
WO2025252680A1 (en) Metal compounds for ald applications
KR20240167067A (ko) Cvd 및 ald 적용을 위한 인계 리간드를 갖는 금속 카르보닐 착물
KR20240128699A (ko) 비스무트 산화물 함유 박막 증착용 호모렙틱 비스무트 전구체

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20241008

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20241008

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20250925

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20251022

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20251218

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20260408