JP2024501126A - 光回折格子結合器が中に集積された光検出器及び関連する方法 - Google Patents

光回折格子結合器が中に集積された光検出器及び関連する方法 Download PDF

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JP2024501126A
JP2024501126A JP2023531645A JP2023531645A JP2024501126A JP 2024501126 A JP2024501126 A JP 2024501126A JP 2023531645 A JP2023531645 A JP 2023531645A JP 2023531645 A JP2023531645 A JP 2023531645A JP 2024501126 A JP2024501126 A JP 2024501126A
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optical grating
photodetector
integrated optical
qwip
grating coupler
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Japanese (ja)
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JP2024501126A5 (cg-RX-API-DMAC7.html
Inventor
ハインズ、ショーン
ジェイ．ディー． クレム、イーサン
ウィリアム グレゴリー、クリストファー
アラン、ジュニア ヒルトン、ジェフリー
アラン ヘイムズ、グレッグ
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エスダブリュアイアール ビジョン システムズ インコーポレイテッド
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Publication of JP2024501126A publication Critical patent/JP2024501126A/ja
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1814—Diffraction gratings structurally combined with one or more further optical elements, e.g. lenses, mirrors, prisms or other diffraction gratings
    • G02B5/1819—Plural gratings positioned on the same surface, e.g. array of gratings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1433—Quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2023531645A 2020-11-24 2021-11-22 光回折格子結合器が中に集積された光検出器及び関連する方法 Pending JP2024501126A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063117548P 2020-11-24 2020-11-24
US63/117,548 2020-11-24
PCT/US2021/060315 WO2022115373A1 (en) 2020-11-24 2021-11-22 Photodetectors having optical grating couplers integrated therein and related methods

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JP2024501126A true JP2024501126A (ja) 2024-01-11
JP2024501126A5 JP2024501126A5 (cg-RX-API-DMAC7.html) 2024-11-29

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US (1) US20220165893A1 (cg-RX-API-DMAC7.html)
EP (1) EP4252286A4 (cg-RX-API-DMAC7.html)
JP (1) JP2024501126A (cg-RX-API-DMAC7.html)
KR (1) KR20230107363A (cg-RX-API-DMAC7.html)
WO (1) WO2022115373A1 (cg-RX-API-DMAC7.html)

Families Citing this family (3)

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Publication number Priority date Publication date Assignee Title
EP3901612B1 (en) * 2020-04-23 2024-06-12 Sensirion AG Integrated particulate matter sensor with cavity
US12399340B2 (en) 2022-10-27 2025-08-26 Sensirion Ag Optical component, optoelectronic module and method of manufacture
CN118524721B (zh) * 2024-07-23 2024-12-17 中芯热成科技(北京)有限责任公司 红外器件及制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009509129A (ja) * 2005-08-25 2009-03-05 エドワード・サージェント 高利得及び高感度の量子ドット光学デバイス及びその作製方法
CN107275421A (zh) * 2017-06-07 2017-10-20 华中科技大学 一种量子点光电探测器及其制备方法
CN108444927A (zh) * 2018-03-12 2018-08-24 华中科技大学 一种光谱分析芯片及其制备方法
US20200105957A1 (en) * 2018-09-28 2020-04-02 Hewlett Packard Enterprise Development Lp Photodiode having light redirection layer
CN111969072A (zh) * 2020-08-17 2020-11-20 南方科技大学 一种基于量子点光栅增强的光电探测器及其制备方法和探测光的调整方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4536608A (en) * 1983-04-25 1985-08-20 Exxon Research And Engineering Co. Solar cell with two-dimensional hexagonal reflecting diffraction grating
FR2783356B1 (fr) * 1998-09-14 2005-02-25 Fujitsu Ltd Photodetecteur infrarouge et procede pour sa fabrication
US6429461B1 (en) * 1998-10-19 2002-08-06 Rohm Co., Ltd. Surface light emitting devices
US6858462B2 (en) * 2000-04-11 2005-02-22 Gratings, Inc. Enhanced light absorption of solar cells and photodetectors by diffraction
US7923801B2 (en) * 2007-04-18 2011-04-12 Invisage Technologies, Inc. Materials, systems and methods for optoelectronic devices
US7968790B2 (en) * 2009-01-16 2011-06-28 Genie Lens Technologies, Llc Photovoltaic (PV) enhancement films for enhancing optical path lengths and for trapping reflected light
DK2483925T3 (en) 2009-09-29 2018-08-20 Res Triangle Inst QUANTITY POINT FILLER TRANSITION BASED PHOTO DETECTORS
US8835851B2 (en) * 2009-10-21 2014-09-16 Stc.Unm Plasmonic detectors
US8735791B2 (en) * 2010-07-13 2014-05-27 Svv Technology Innovations, Inc. Light harvesting system employing microstructures for efficient light trapping
US20120021555A1 (en) * 2010-07-23 2012-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaic cell texturization
US20120266957A1 (en) * 2011-04-20 2012-10-25 Agency For Science, Technology And Research Organic photovoltaic cell with polymeric grating and related devices and methods
WO2013005231A2 (en) * 2011-07-05 2013-01-10 Council Of Scientific & Industrial Research Planar solar concentrators using subwavelength gratings
US8941203B2 (en) * 2012-03-01 2015-01-27 Raytheon Company Photodetector with surface plasmon resonance
US9929291B2 (en) * 2014-02-06 2018-03-27 Raytheon Company Photo-detector having plasmonic resonance and photon crystal thermal noise suppression
DE102014221525B4 (de) * 2014-05-16 2021-08-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Messsystem
JP6822151B2 (ja) * 2017-01-06 2021-01-27 富士通株式会社 光検知器及び撮像装置
CN107170849B (zh) * 2017-05-04 2019-06-18 华中科技大学 一种条型超表面结构偏振相关窄带探测器及其制备与应用
CN109411500B (zh) * 2018-10-31 2021-01-22 京东方科技集团股份有限公司 探测面板及其制作方法
TW202041847A (zh) * 2019-01-03 2020-11-16 美商寬騰矽公司 用於傳遞光至光子元件之陣列的光學波導及耦合器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009509129A (ja) * 2005-08-25 2009-03-05 エドワード・サージェント 高利得及び高感度の量子ドット光学デバイス及びその作製方法
CN107275421A (zh) * 2017-06-07 2017-10-20 华中科技大学 一种量子点光电探测器及其制备方法
CN108444927A (zh) * 2018-03-12 2018-08-24 华中科技大学 一种光谱分析芯片及其制备方法
US20200105957A1 (en) * 2018-09-28 2020-04-02 Hewlett Packard Enterprise Development Lp Photodiode having light redirection layer
CN111969072A (zh) * 2020-08-17 2020-11-20 南方科技大学 一种基于量子点光栅增强的光电探测器及其制备方法和探测光的调整方法

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US20220165893A1 (en) 2022-05-26
KR20230107363A (ko) 2023-07-14
EP4252286A1 (en) 2023-10-04
WO2022115373A1 (en) 2022-06-02
EP4252286A4 (en) 2024-11-27

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