JP2024127864A5 - - Google Patents

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Publication number
JP2024127864A5
JP2024127864A5 JP2024035082A JP2024035082A JP2024127864A5 JP 2024127864 A5 JP2024127864 A5 JP 2024127864A5 JP 2024035082 A JP2024035082 A JP 2024035082A JP 2024035082 A JP2024035082 A JP 2024035082A JP 2024127864 A5 JP2024127864 A5 JP 2024127864A5
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JP
Japan
Prior art keywords
deflection
fitting
bct
electron beam
scan
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Pending
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JP2024035082A
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English (en)
Japanese (ja)
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JP2024127864A (ja
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Publication of JP2024127864A publication Critical patent/JP2024127864A/ja
Publication of JP2024127864A5 publication Critical patent/JP2024127864A5/ja
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JP2024035082A 2023-03-08 2024-03-07 荷電粒子ビームの較正装置及び方法 Pending JP2024127864A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP23160722.7 2023-03-08
EP23160722 2023-03-08

Publications (2)

Publication Number Publication Date
JP2024127864A JP2024127864A (ja) 2024-09-20
JP2024127864A5 true JP2024127864A5 (enExample) 2024-12-25

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ID=85556577

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JP2024035082A Pending JP2024127864A (ja) 2023-03-08 2024-03-07 荷電粒子ビームの較正装置及び方法

Country Status (4)

Country Link
US (1) US20240304407A1 (enExample)
EP (1) EP4428896A1 (enExample)
JP (1) JP2024127864A (enExample)
KR (1) KR20240137486A (enExample)

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5830612A (en) * 1996-01-24 1998-11-03 Fujitsu Limited Method of detecting a deficiency in a charged-particle-beam exposure mask
JPH10106931A (ja) * 1996-10-03 1998-04-24 Hitachi Ltd 電子ビーム露光方法およびそれを用いた半導体集積回路装置の製造方法
US6768125B2 (en) 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
GB2399676B (en) 2003-03-21 2006-02-22 Ims Ionen Mikrofab Syst Apparatus for enhancing the lifetime of stencil masks
GB2414111B (en) 2004-04-30 2010-01-27 Ims Nanofabrication Gmbh Advanced pattern definition for particle-beam processing
ATE527678T1 (de) 2008-11-17 2011-10-15 Ims Nanofabrication Ag Verfahren zur maskenlosen teilchenstrahlbelichtung
US8198601B2 (en) 2009-01-28 2012-06-12 Ims Nanofabrication Ag Method for producing a multi-beam deflector array device having electrodes
US8546767B2 (en) 2010-02-22 2013-10-01 Ims Nanofabrication Ag Pattern definition device with multiple multibeam array
JP2011199279A (ja) 2010-03-18 2011-10-06 Ims Nanofabrication Ag ターゲット上へのマルチビーム露光のための方法
JP2013118060A (ja) * 2011-12-01 2013-06-13 Canon Inc 荷電粒子ビーム装置
EP2830083B1 (en) 2013-07-25 2016-05-04 IMS Nanofabrication AG Method for charged-particle multi-beam exposure
JP6808986B2 (ja) * 2016-06-09 2021-01-06 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びその調整方法
JP2019114731A (ja) * 2017-12-26 2019-07-11 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
US10651010B2 (en) 2018-01-09 2020-05-12 Ims Nanofabrication Gmbh Non-linear dose- and blur-dependent edge placement correction
WO2022192088A1 (en) * 2021-03-12 2022-09-15 Nikon Corporation Directed energy beam deflection field monitor and corrector

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