JP2024127864A - 荷電粒子ビームの較正装置及び方法 - Google Patents
荷電粒子ビームの較正装置及び方法 Download PDFInfo
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- JP2024127864A JP2024127864A JP2024035082A JP2024035082A JP2024127864A JP 2024127864 A JP2024127864 A JP 2024127864A JP 2024035082 A JP2024035082 A JP 2024035082A JP 2024035082 A JP2024035082 A JP 2024035082A JP 2024127864 A JP2024127864 A JP 2024127864A
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Images
Classifications
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
- H01J37/1474—Scanning means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
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- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
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- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
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- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
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- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
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Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP23160722 | 2023-03-08 | ||
| EP23160722.7 | 2023-03-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024127864A true JP2024127864A (ja) | 2024-09-20 |
| JP2024127864A5 JP2024127864A5 (enExample) | 2024-12-25 |
Family
ID=85556577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024035082A Pending JP2024127864A (ja) | 2023-03-08 | 2024-03-07 | 荷電粒子ビームの較正装置及び方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240304407A1 (enExample) |
| EP (1) | EP4428896A1 (enExample) |
| JP (1) | JP2024127864A (enExample) |
| KR (1) | KR20240137486A (enExample) |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5830612A (en) * | 1996-01-24 | 1998-11-03 | Fujitsu Limited | Method of detecting a deficiency in a charged-particle-beam exposure mask |
| JPH10106931A (ja) * | 1996-10-03 | 1998-04-24 | Hitachi Ltd | 電子ビーム露光方法およびそれを用いた半導体集積回路装置の製造方法 |
| US6768125B2 (en) | 2002-01-17 | 2004-07-27 | Ims Nanofabrication, Gmbh | Maskless particle-beam system for exposing a pattern on a substrate |
| GB2399676B (en) | 2003-03-21 | 2006-02-22 | Ims Ionen Mikrofab Syst | Apparatus for enhancing the lifetime of stencil masks |
| GB2414111B (en) | 2004-04-30 | 2010-01-27 | Ims Nanofabrication Gmbh | Advanced pattern definition for particle-beam processing |
| EP2187427B1 (en) | 2008-11-17 | 2011-10-05 | IMS Nanofabrication AG | Method for maskless particle-beam exposure |
| US8198601B2 (en) | 2009-01-28 | 2012-06-12 | Ims Nanofabrication Ag | Method for producing a multi-beam deflector array device having electrodes |
| US8546767B2 (en) | 2010-02-22 | 2013-10-01 | Ims Nanofabrication Ag | Pattern definition device with multiple multibeam array |
| JP2011199279A (ja) | 2010-03-18 | 2011-10-06 | Ims Nanofabrication Ag | ターゲット上へのマルチビーム露光のための方法 |
| JP2013118060A (ja) * | 2011-12-01 | 2013-06-13 | Canon Inc | 荷電粒子ビーム装置 |
| EP2830083B1 (en) | 2013-07-25 | 2016-05-04 | IMS Nanofabrication AG | Method for charged-particle multi-beam exposure |
| JP6808986B2 (ja) * | 2016-06-09 | 2021-01-06 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置及びその調整方法 |
| JP2019114731A (ja) * | 2017-12-26 | 2019-07-11 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 |
| US10651010B2 (en) | 2018-01-09 | 2020-05-12 | Ims Nanofabrication Gmbh | Non-linear dose- and blur-dependent edge placement correction |
| US20240157641A1 (en) * | 2021-03-12 | 2024-05-16 | Nikon Corporation | Directed energy beam deflection field monitor and corrector |
-
2024
- 2024-03-05 US US18/596,468 patent/US20240304407A1/en active Pending
- 2024-03-07 EP EP24162043.4A patent/EP4428896A1/en active Pending
- 2024-03-07 JP JP2024035082A patent/JP2024127864A/ja active Pending
- 2024-03-07 KR KR1020240032452A patent/KR20240137486A/ko active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP4428896A1 (en) | 2024-09-11 |
| KR20240137486A (ko) | 2024-09-20 |
| US20240304407A1 (en) | 2024-09-12 |
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