JP2024088829A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP2024088829A
JP2024088829A JP2022203816A JP2022203816A JP2024088829A JP 2024088829 A JP2024088829 A JP 2024088829A JP 2022203816 A JP2022203816 A JP 2022203816A JP 2022203816 A JP2022203816 A JP 2022203816A JP 2024088829 A JP2024088829 A JP 2024088829A
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Japan
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groove
semiconductor layer
main surface
crystal
semiconductor device
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Japanese (ja)
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JP2024088829A5 (https=
Inventor
孝仁 大島
Takahito Oshima
祐一 大島
Yuichi Oshima
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National Institute for Materials Science
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National Institute for Materials Science
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Priority to JP2022203816A priority Critical patent/JP2024088829A/ja
Publication of JP2024088829A publication Critical patent/JP2024088829A/ja
Publication of JP2024088829A5 publication Critical patent/JP2024088829A5/ja
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
JP2022203816A 2022-12-21 2022-12-21 半導体装置およびその製造方法 Pending JP2024088829A (ja)

Priority Applications (1)

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JP2022203816A JP2024088829A (ja) 2022-12-21 2022-12-21 半導体装置およびその製造方法

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JP2022203816A JP2024088829A (ja) 2022-12-21 2022-12-21 半導体装置およびその製造方法

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JP2024088829A true JP2024088829A (ja) 2024-07-03
JP2024088829A5 JP2024088829A5 (https=) 2025-11-18

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