JP2024036171A - Semiconductor device manufacturing apparatus and manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing apparatus capable of further reducing time required for pickup of a chip.

SOLUTION: A semiconductor device manufacturing apparatus 10 comprises: a wafer holding device 12 that holds one or more chips 100 bonded and held on a front surface of a dicing tape 120 together with the dicing tape 120; a pickup head 14 that picks-up a target chip 100; an energy radiation device 16 that radiates energy toward the target chip 100 from a back surface side of the dicing tape 120 to reduce an adhesive force of the dicing tape 120; a temperature sensor 44 that detects the temperature in the radiation area of the energy; and a controller 22. The controller 22 controls driving of the energy radiation device 16 on the basis of the detected temperature with the temperature sensor 44.

SELECTED DRAWING: Figure 1

COPYRIGHT: (C)2024,JPO&INPIT

Description

This specification discloses a manufacturing apparatus and a manufacturing method for manufacturing a semiconductor device by bonding a chip to a substrate.

When manufacturing a semiconductor device, a chip is bonded to a substrate. Before being bonded to a substrate, the chip is attached to a sheet called a dicing tape. In the bonding process, the chip attached to the dicing tape is peeled off from the dicing tape using a pickup head and then picked up. The picked up chip is bonded to the substrate by a pickup head.

Here, in the past, mechanical force was often applied to the chip in order to separate the chip from the dicing tape. For example, conventionally, chips were pulled away from the dicing tape for peeling. However, in this case, there was a risk that the chip would be damaged by mechanical force.

Furthermore, in recent years, some proposals have been made to use non-contact pickup devices that pick up chips without coming into contact with them. However, since such a non-contact pickup device has a small suction force, there is a possibility that the non-contact pickup device may not be able to peel the chips from the dicing tape.

Therefore, some proposals have been made to use a dicing tape having a self-peelable adhesive layer (for example, Patent Documents 1 and 2). The self-peel adhesive layer is a layer whose adhesive strength decreases when it is irradiated with energy such as light or heat. If chips are adhered to such dicing tape and energy is irradiated just before pick-up, the chips can be attached to the self-peeling tape without applying any mechanical load to the chips, and even if the suction force of the pick-up device is small, the chips can be attached to the self-peeling tape. It can be peeled off from.

Japanese Patent Application Publication No. 2007-194433 Japanese Patent Application Publication No. 2012-199442

However, when using a self-peelable dicing tape, the dicing tape is naturally irradiated with energy such as light or heat. If the temperature of the dicing tape or chip increases excessively due to this irradiation, the chip will be damaged. Therefore, when using a self-peelable dicing tape, it has been necessary to keep the amount of irradiation energy low per unit time so that the dicing tape and chips do not become too hot. As a result, the time required to peel off the chip and, by extension, the time required to pick up the chip has become longer.

Therefore, this specification discloses a semiconductor device manufacturing apparatus and manufacturing method that can further reduce the time required to pick up a chip.

The semiconductor device manufacturing apparatus disclosed in this specification is a manufacturing apparatus for manufacturing a semiconductor device by picking up a chip from a dicing tape and joining it to an object to be joined. a wafer holding unit that holds the above-mentioned chips together with the dicing tape; a pickup head that picks up a target chip that is a chip to be picked up among the one or more chips; the controller; an energy irradiation unit that irradiates energy such as light or heat to reduce the adhesive force of the dicing tape; a temperature sensor that detects a temperature in the energy irradiation area; and a controller. The method is characterized in that driving of the energy irradiation section is controlled based on the temperature detected by the temperature sensor.

In this case, the controller feedback-controls the intensity of the energy so that the detected temperature becomes a specified target temperature, and the target temperature may be lower than the respective allowable temperature limits of the chip and the dicing tape. .

Further, when the detected temperature changes, the controller determines that the target chip has peeled off from the dicing tape, reduces the energy irradiation intensity to the energy irradiation section, and picks up the target chip with the pickup head. You may let them.

Further, the energy irradiation unit includes a plurality of light sources, the temperature sensor detects the temperature for each irradiation area in which the target chip is divided into areas, and the controller controls the plurality of light sources to correspond to the irradiation areas. They may be controlled independently of each other based on the temperature.

The method for manufacturing a semiconductor device disclosed in this specification is a manufacturing method for manufacturing a semiconductor device by picking up a chip from a dicing tape and joining it to an object to be joined, the chip being adhesively held on the surface of the dicing tape. In this state, energy in the form of light or heat is irradiated from the back side of the dicing tape toward the target chip, which is the chip to be picked up, to reduce the adhesive force of the dicing tape and prevent the irradiation of the energy from occurring. Accordingly, after the adhesive force of the adhesive layer of the dicing tape has decreased, the target chip is picked up by a pickup head, and further, in parallel with the energy irradiation, the temperature in the irradiation area is detected. The energy irradiation intensity is adjusted based on the temperature.

According to the technology disclosed in this specification, the temperature in the energy irradiation area is detected and the driving of the energy irradiation unit is controlled based on the detected temperature, so that the target chip and the dicing tape do not become excessively high temperature. can be prevented. As a result, the intensity of the irradiation energy can be increased, so the time required to peel the target chip from the dicing tape and, by extension, the time required for pickup can be shortened.

FIG. 1 is a diagram showing the configuration of a manufacturing device. It is a figure showing the composition of an energy irradiation device. FIG. 3 is an image diagram showing the state immediately after energy is irradiated to the dicing tape. FIG. 3 is an image diagram showing how a chip is peeled off due to energy irradiation. 3 is a flowchart showing the flow of pickup processing. 6 is a timing chart of pickup processing according to the flow of FIG. 5. FIG. 12 is a flowchart showing another example of the flow of pickup processing. 8 is a timing chart of pickup processing according to the flow of FIG. 7. FIG. It is a figure which shows an example of control of the irradiation intensity of energy. 3 is a timing chart of conventional pickup processing.

The configuration of the semiconductor device manufacturing apparatus 10 will be described below with reference to the drawings. FIG. 1 is a diagram showing the configuration of a manufacturing apparatus 10. As shown in FIG. The manufacturing apparatus 10 picks up a chip 100 from a dicing tape 120 and joins it to a substrate 110 or another chip 100 to be joined, thereby manufacturing a semiconductor device. The chip 100 is provided with a bonding material on one surface thereof, and is bonded to the object to be bonded by pressing the one surface against the object to be bonded. Note that, hereinafter, the surface of the chip 100 on which the bonding material is formed will be referred to as the "bonding surface 102", and the surface opposite thereto will be referred to as the "holding surface 104". Further, in the following drawings, the bonding surface 102 is illustrated with a thick line.

When joining the chip 100 to the object to be joined, the chip 100 may be heated or left at room temperature. That is, the bonding material of the chip 100 may be heated and melted, and the bonding material may be welded to the object to be bonded. Alternatively, the chip 100 may be bonded to a bonding target at room temperature using atomic bonding force or molecular bonding force.

In order to bond the chip 100 to a bonding target, the manufacturing apparatus 10 includes a mounting head 18 and a stage 20. The stage 20 is a table on which the substrate 110 is placed. The mounting head 18 is arranged to face the stage 20 and holds the holding surface 104 of the chip 100 by suction at its end. In other words, the mounting head 18 holds the chip 100 so that the bonding surface 102 of the chip 100 faces the stage 20. By moving this mounting head 18 relative to the stage 20, the chip 100 is pressed against the bonding target.

In order to supply the chip 100 to the mounting head 18, the manufacturing apparatus 10 is further provided with a wafer holding device 12, a pickup device (hereinafter referred to as "PU device") 14, and an energy irradiation device 16. There is. The wafer holding device 12 holds the wafer together with the dicing tape 120. The wafer is previously attached to a dicing tape 120 and diced into individual chips 100. Therefore, a plurality of chips 100 are lined up on the surface of the dicing tape 120. As will be explained in detail later, the dicing tape 120 includes a base material 122 and an adhesive layer 124, and holds each chip 100 by the adhesive force of the adhesive layer 124. A wafer ring 130 is attached to the dicing tape 120 so as to surround the wafer. The plurality of chips 100 are held on the dicing tape 120 with the holding surface 104 in contact with the adhesive layer 124 and the bonding surface 102 facing upward (a so-called face-up posture).

The wafer holding device 12 holds the dicing tape 120 while applying tension outward in the surface direction, and includes an expand ring 24 and a ring holder 26. The expand ring 24 is a substantially cylindrical member in which a through hole is formed that penetrates in the axial direction, and a flange that extends radially outward is provided at the lower end thereof. The inner diameter of this expand ring 24 is larger than the diameter of the wafer and smaller than the inner diameter of the wafer ring 130.

Dicing tape 120 is placed on this expand ring 24. Further, the wafer ring 130 attached to the dicing tape 120 is pressed against the flange of the expand ring 24 by the ring presser 26 and fixed. At this time, the dicing tape 120 covers the upper end of the through hole of the expand ring 24, and the dicing tape 120 can be accessed from below through the through hole.

The PU device 14 holds and lifts the chip 100 face up from the dicing tape 120 to pick it up. After picking up the chip 100, the PU device 14 changes the chip 100 to a face-down position and directly or indirectly delivers the chip 100 to the mounting head 18. As shown in FIG. 1, the PU device 14 is arranged to face the bonding surface 102 of the chip 100, and holds the bonding surface 102 of the chip 100 to be picked up (hereinafter referred to as "target chip 100"). It has a PU head 28. After picking up the target chip 100, the PU head 28 rotates 180 degrees to change the target chip 100 to a face-down position. The PU device 14 delivers the target chip 100 in this face-down attitude to the mounting head 18. In FIG. 1, the target chip 100 is directly transferred from the PU device 14 to the mounting head 18, but it may be transferred through another device.

The energy irradiation device 16 is provided on the back side of the dicing tape 120, that is, on the opposite side of the PU device 14 with the dicing tape 120 in between. This energy irradiation device 16 irradiates energy toward the target chip 100 to reduce the adhesive force of the dicing tape 120. The type of energy is selected depending on the characteristics of the adhesive layer 124 of the dicing tape 120. In this example, light, more specifically UV light, is used as energy. The reason for providing such energy irradiation device 16 will be described later.

FIG. 2 is a diagram showing the configuration of the energy irradiation device 16. As shown in FIG. 2, the energy irradiation device 16 has a cylindrical body 30. A circuit board 38 is attached inside the cylinder 30. A plurality of light sources 40 are arranged in a matrix on the upper surface of the circuit board 38. The light source 40 is, for example, a UV LED that outputs UV light. A passage opening 32 is formed at the upper end of the cylindrical body 30. A lens 34 that transmits UV light is fitted into the passage opening 32.

Further, a suction groove 36 is formed in the upper end surface of the cylinder 30 so as to surround the passage opening 32 . This suction groove 36 is communicated with a suction pump 42. When irradiating the target chip 100 with UV light, the controller 22 brings the top surface of the cylinder 30 into contact with the dicing tape 120 and drives the suction pump 42 . Thereby, the cylindrical body 30 comes into close contact with the back surface of the dicing tape 120, and a part of the heat generated in the dicing tape 120 and the target chip 100 is transferred to the cylindrical body 30 and is easily dissipated.

The energy irradiation device 16 further includes a temperature sensor 44 that detects the temperature of the target chip 100 in the energy irradiation area. The temperature sensor 44 is not particularly limited as long as it can directly or indirectly detect the temperature of the dicing tape 120 or the target chip 100. In the example of FIG. 2, temperature sensor 44 is a contact temperature sensor, such as a thermocouple, attached to the lower surface of lens 34. One or more such temperature sensors 44 may be provided. Further, the temperature sensor 44 may be a non-contact temperature sensor that detects temperature without contact, such as an infrared sensor. In this case, the infrared sensor may be assembled on the circuit board 38 together with the light source 40, for example. In any case, the reason for providing such a temperature sensor 44 will be explained in detail later.

Note that the energy irradiation device 16 may selectively irradiate an area with UV light. To enable area-selective irradiation, the energy application device 16 may change the position and/or orientation of the light source 40 (eg, UVLED). Moreover, as another form, the energy irradiation device 16 may provide a mask member between the light source 40 and the dicing tape 120 to limit the irradiation area. Furthermore, as another form, the energy irradiation device 16 may include an optical member, such as a lens or a prism, that changes the irradiation direction and/or irradiation range of the UV light output from the light source 40. In any case, the energy irradiation device 16 changes the energy irradiation position according to the position of the target chip 100.

The controller 22 controls the driving of the mounting head 18, the PU device 14, and the energy irradiation device 16 described above. The controller 22 is physically a computer having a processor 22a and a memory 22b.

By the way, as is clear from the above explanation, the chip 100 is adhesively held by the dicing tape 120. Therefore, when picking up the chip 100, it is necessary to peel the chip 100 from the dicing tape 120. Conventionally, in order to peel off the chip 100, mechanical force was often applied to the chip 100. Specifically, the chip 100 before peeling is often held under suction by the PU head 28, and the PU head 28 is raised. As the PU head 28 rises, a force is applied to the chip 100 in a direction away from the dicing tape 120, and this force causes the chip 100 to be peeled off from the dicing tape 120. In this case, a load is applied to the chip 100, and the chip 100 may be damaged.

Furthermore, in recent years, in order to prevent mechanical contact between the PU head 28 and the bonding surface 102, a non-contact type PU head 28 is sometimes used. The non-contact type PU head 28 may have, for example, an air jet type non-contact chuck that suctions the chip 100 by jetting air radially or cyclone-like, or it may use an ultrasonic wave to suck the chip 100. It may also have an ultrasonic non-contact chuck for suction. In any case, by using the non-contact type PU head 28, deterioration in quality of the bonding surface 102 of the chip 100 can be suppressed. However, in the case of such a non-contact type PU head 28, the suction force of the chip 100 is low, so there is a possibility that the chip 100 cannot be isolated from the dicing tape 120.

Therefore, in this example, an energy irradiation device 16 is provided in order to reduce the adhesive force of the dicing tape 120 prior to pickup. Here, the dicing tape 120 used in this example will be explained. 3 and 4 are conceptual diagrams showing how the chip 100 is peeled off by the energy irradiation device 16.

As shown in FIGS. 3 and 4, the dicing tape 120 is constructed by laminating a base material 122 and an adhesive layer 124. The adhesive layer 124 is a UV self-peelable adhesive layer that loses its adhesive force and automatically peels off the target chip 100 when irradiated with energy, more specifically, UV light. Such a UV self-peel adhesive layer can be composed of, for example, a special acrylic polymer and a UV-functional gas generating agent. When the UV self-peel adhesive layer is irradiated with UV light, nitrogen gas is generated in the adhesive, and the gas is released to the outside of the adhesive and to the adhesive surface interface, and as the gas accumulates at the adhesive interface, the adhesive target will peel off naturally. The base material 122 may be made of a sheet made of a transparent resin such as polyacrylic, polyolefin, polycarbonate, vinyl chloride, ABS, polyethylene terephthalate (PET), nylon, polyurethane, or polyimide, as long as it can transmit UV light. good. Further, as another form, the base material 122 may be composed of a sheet having a mesh structure, a sheet with holes, or the like.

When an area of the dicing tape 120 corresponding to the target chip 100 is irradiated with UV light by the energy irradiation device 16, as shown in FIG. Gas is generated, and the target chip 100 is automatically peeled off. Then, by peeling the target chip 100 from the dicing tape 120, the target chip 100 can be picked up without applying a large load to the target chip 100, and even with a small suction force.

However, in the case of peeling using UV light, there has conventionally been a problem that the process takes time. This will be explained with reference to FIG. FIG. 10 is a timing chart of conventional pickup processing. In FIG. 10, the first row shows the Z position of the PU head 28, and the second row shows the peeling status of the target chip 100. Further, the third row shows the temperature Td detected by the temperature sensor 44, and the fourth row shows the UV light irradiation status by the energy irradiation device 16. Note that in the manufacturing apparatus 10 of the conventional example, the temperature sensor 44 is not provided and the detected temperature Td is not detected, but in FIG. 10, the detected temperature Td is illustrated for comparison with the present example. There is.

In the conventional example shown in FIG. 10, in order to peel the chip 100 from the dicing tape 120, UV light irradiation is started at time t1. When UV light is irradiated, the adhesive layer 124 of the dicing tape 120 gradually changes in quality and its adhesive strength decreases. Moreover, heat is generated in the dicing tape 120 and the chip 100 by irradiating the UV light. A part of this heat is released to the outside air directly or through the cylinder 30. However, when the intensity of the UV light is high and the amount of energy supplied is high compared to the heat dissipation rate, the target chip 100 or the dicing tape 120 may exceed their heat resistant temperature before the target chip 100 is peeled off, causing damage. There was a risk that

Therefore, in the conventional example, the intensity of the UV light is kept low so that the target chip 100 and the dicing tape 120 do not exceed the allowable temperature limit before the target chip 100 is peeled off. In the conventional example shown in FIG. 10, the intensity of UV light is kept low by reducing the duty ratio D of the light source 40. As a result, as shown in FIG. 10, the temperature of the target chip 100 gradually increases. On the other hand, while the temperature of the target chip 100 is gradually rising, the adhesive layer 124 of the dicing tape 120 is gradually changed in quality by the UV light. As a result, the target chip 100 is peeled off from the dicing tape 120 at time t2.

However, in the conventional example, such peeling of the target chip 100 cannot be detected, and pickup is not started until a predetermined standby time has elapsed from the start of UV light irradiation. In the conventional example shown in FIG. 10, pickup is started at time t3 when a predetermined standby time tw2 has elapsed from time t1, and UV light irradiation is stopped.

Note that, as shown in FIG. 10, the rate of increase in the detected temperature Td increases after time t2 when the target chip 100 is peeled off. This is because the peeling of the target chip 100 makes it difficult for the heat generated in the adhesive layer 124 to be transferred to the target chip 100, and the temperature rise rate of the dicing tape 120 increases accordingly.

As described above, conventionally, while the target chip 100 is reliably peeled until the predetermined waiting time tw2 elapses, UV light is The irradiation intensity was kept low. In this case, as a matter of course, it takes time to start picking up the target chip 100, which leads to an increase in the time required to pick up the target chip 100 and, in turn, to manufacture the semiconductor device.

Therefore, in this example, the temperature of the target chip 100 or the dicing tape 120 is detected directly or indirectly, and the intensity of the UV light is feedback-controlled so that the detected temperature Td does not exceed the specified target temperature T*. are doing. With this configuration, even if the irradiation intensity of UV light is increased, damage to the target chip 100 etc. can be prevented. Moreover, by increasing the irradiation intensity of UV light, the time required to peel off the target chip 100 and the time required to pick it up can be shortened.

Note that the target temperature T* is set to a value such that the target chip 100 and the dicing tape 120 do not exceed their respective allowable temperature limits. Specifically, for example, the allowable temperature limit of the target chip 100 is Ta, the maximum error of the detected temperature Td with respect to the actual temperature of the target chip 100 is Ea%, the allowable limit temperature of the dicing tape 120 is Tb, and the maximum error with respect to the actual temperature of the dicing tape 120 is Let Eb% be the maximum error in the detected temperature Td. In this case, the target temperature T* is set to a value that satisfies both T**(1+Ea/100)<Ta and T**(1+Eb/100)<Tb. In other words, the target temperature T* is lower than Ta/(1+Ea/100) and lower than Tb/(1+Eb/100).

FIG. 5 is a flowchart showing the flow of pickup processing in this example. As shown in FIG. 5, the controller 22 first positions the energy irradiation device 16 with respect to the target chip 100 (S10). If the energy irradiation device 16 can be appropriately positioned with respect to the target chip 100, the controller 22 starts irradiation with UV light (S12). At this time, the duty ratio D is set to 100%.

Thereafter, the controller 22 feedback-controls the duty ratio D using the detected temperature Td as a feedback value (S14, S16). Specifically, the controller 22 calculates the deviation ΔT between the detected temperature Td and the target temperature T* (S14), and increases or decreases the duty ratio D in proportion to the deviation ΔT (S16). That is, when the proportional gain is Kp and the bias is b, D=ΔT×Kp+b. Note that, depending on the value of the deviation ΔT, D>100 may be satisfied, but the duty ratio D is clipped at 100%.

The controller 22 continues this proportional feedback control of the duty ratio D until the elapsed time from the start of UV light irradiation reaches a predetermined standby time tw1 (S18). On the other hand, if the elapsed time reaches the predetermined standby time tw1, the controller 22 stops the UV light irradiation (S20) and drives the PU device 14 to start picking up the chip 100 (S22).

FIG. 6 is a timing chart of the pickup process in this example. In the example of FIG. 6, UV light irradiation is started at time t1. In this example, as described above, the duty ratio D is controlled by proportional feedback using the detected temperature Td as the feedback value. Therefore, since the deviation ΔT is large immediately after the UV light irradiation starts, the UV light irradiation intensity is also kept high. In the example of FIG. 6, the duty ratio D is 100% until the detected temperature Td approaches the target temperature T*. As a result, the detected temperature Td, and eventually the dicing tape 120 and the target chip 100, rapidly rise in temperature. At time t2, when the detected temperature Td reaches the target temperature T*, the deviation ΔT becomes smaller, so the controller 22 lowers the duty ratio D of the light source 40 and lowers the irradiation intensity of UV light. This suppresses the temperature rise of the target chip 100, and prevents the target chip 100 and the dicing tape 120 from exceeding the allowable temperature limit. On the other hand, since UV light is irradiated with high intensity until the target temperature T* is reached, the target chip 100 is peeled off from the dicing tape 120 relatively early. In the example of FIG. 6, the target chip 100 is peeled off from the dicing tape 120 at time t3.

On the other hand, at time t4 when the standby time tw1 has elapsed since the start of UV light irradiation, the target chip 100 is picked up and the UV light irradiation is stopped. Here, the waiting time tw1 is set to a time period during which the target chip 100 is reliably peeled off. As described above, in this example, UV light is irradiated with high intensity until the target temperature T* is reached, so the standby time tw1 can be significantly shortened compared to the standby time tw2 of the conventional example. As a result, according to this example, the time required for pickup can be shortened.

In the examples of FIGS. 5 and 6, even after the target chip 100 is peeled off, the pickup of the target chip 100 is not started until the waiting time tw1 has elapsed. However, the timing of peeling may be specified based on a change in the detected temperature Td, and if peeling is detected, the pickup and UV light irradiation may be stopped immediately.

That is, as described above, when the target chip 100 is peeled off, heat transfer from the dicing tape 120 to the target chip 100 is inhibited, and the temperature of the dicing tape 120 and thus the detected temperature Td temporarily increases rapidly. If this detected temperature Td temporarily increases sharply, it may be determined that the target chip 100 has peeled off, and pickup may be started and UV light irradiation may be stopped.

FIG. 7 is a flowchart of the pickup process in this case. In FIG. 7, the processing from steps S10 to S16 is the same as the processing in FIG. On the other hand, in the example of FIG. 7, after determining the duty ratio D, the controller 22 compares the differential value ΔTd=Td[i]-Td[i-1] of the detected temperature Td with a predetermined reference value Ast (S18 ´). As a result of the comparison, if the differential value ΔTd is greater than or equal to the reference value Ast, the controller 22 determines that the detected temperature Td has increased rapidly and that the target chip 100 has peeled off. In this case, the controller 22 stops the UV light irradiation and causes the PU device 14 to start picking up the target chip 100 (S20, S22).

FIG. 8 is a timing chart of the pickup process according to the flow of FIG. In the example of FIG. 8, peeling of the target chip 100 occurs at time t3, and the detected temperature Td rises rapidly. When the controller 22 detects a sudden rise in the detected temperature Td, the controller 22 immediately starts the pickup and stops the UV light irradiation. As a result, the time required for pickup can be further reduced.

As is clear from the above description, according to the technology disclosed in this specification, the temperatures of the target chip 100 and the dicing tape 120 are detected directly or indirectly, and UV light is irradiated according to the obtained detected temperature Td. Adjusting the intensity. As a result, the time required to pick up the target chip 100 can be shortened while preventing damage to the target chip 100 and the dicing tape 120.

Note that the configuration described so far is an example, and may be changed as appropriate. For example, the control form of the UV light irradiation intensity may be changed as appropriate. For example, the duty ratio D of the drive signal for the light source 40 may be controlled by proportional-integral control or proportional-integral-derivative control instead of proportional control. In addition, as another embodiment, when the detected temperature Td crosses the target temperature T* in the increasing direction according to the switching chart in FIG. -α), the light source 40 may be turned on.

Further, the plurality of light sources 40 may be controlled independently of each other. For example, the detected temperature Td may be acquired for each irradiation area of the plurality of light sources 40. Then, ON/OFF of each of the plurality of light sources 40 may be independently controlled according to the detected temperature Td corresponding to that light source 40. With such a configuration, variations in temperature distribution can be suppressed. In this case, a plurality of contact temperature sensors may be provided to obtain a plurality of detected temperatures Td, or a single infrared sensor may be used to obtain an image of the temperature distribution in the irradiation area.

Further, in the above description, UV light is irradiated as energy, but the type of energy to be irradiated may be changed as appropriate depending on the characteristics of the dicing tape 120. For example, if the adhesive layer 124 of the dicing tape 120 self-peels off due to heat, the energy irradiation device 16 may irradiate heat as energy.

10 Manufacturing equipment, 12 Wafer holding device, 14 PU device, 16 Energy irradiation device, 18 Mounting head, 20 Stage, 22 Controller, 24 Expand ring, 26 Ring holder, 28 PU head, 30 Cylindrical body, 32 Passing opening, 34 Lens , 36 suction groove, 38 circuit board, 40 light source, 42 suction pump, 44 temperature sensor, 100 chip, 102 bonding surface, 104 holding surface, 110 substrate, 120 dicing tape, 122 base material, 124 adhesive layer, 130 wafer ring.

Claims (5)

A manufacturing device that picks up a chip from a dicing tape and joins it to a target to manufacture a semiconductor device,
a wafer holding unit that holds one or more of the chips adhesively held on the surface of the dicing tape, together with the dicing tape;
a pickup head that picks up a target chip that is a chip to be picked up among the one or more chips;
an energy irradiation unit that irradiates energy in the form of light or heat from the back side of the dicing tape toward the target chip to reduce the adhesive force of the dicing tape;
a temperature sensor that detects the temperature in the energy irradiation area;
controller and
Equipped with
The controller controls driving of the energy irradiation unit based on the temperature detected by the temperature sensor.
A semiconductor device manufacturing apparatus characterized by: The semiconductor device manufacturing apparatus according to claim 1,
The controller feedback-controls the intensity of the energy so that the detected temperature becomes a specified target temperature,
The target temperature is lower than the respective allowable temperature limits of the chip and the dicing tape.
A semiconductor device manufacturing apparatus characterized by: The semiconductor device manufacturing apparatus according to claim 1,
The controller determines that the target chip has peeled off from the dicing tape when the detected temperature changes, causes the energy irradiation unit to reduce the energy irradiation intensity, and causes the pickup head to pick up the target chip.
A semiconductor device manufacturing apparatus characterized by: The semiconductor device manufacturing apparatus according to claim 1,
The energy irradiation unit includes a plurality of light sources,
The temperature sensor detects the temperature for each irradiation area where the target chip is divided into areas,
The controller controls the plurality of light sources independently of each other based on a temperature corresponding to the irradiation area.
A semiconductor device manufacturing apparatus characterized by: A manufacturing method for manufacturing a semiconductor device by picking up a chip from a dicing tape and joining it to an object to be joined, the method comprising:
With the chip being adhesively held on the surface of the dicing tape, energy in the form of light or heat is irradiated from the back side of the dicing tape toward the target chip, which is the chip to be picked up, to remove the dicing tape. Reduces adhesion,
After the adhesive force of the adhesive layer of the dicing tape decreases due to the energy irradiation, picking up the target chip with a pickup head;
method, and furthermore,
In parallel with the energy irradiation, detecting the temperature in the irradiation area,
adjusting the intensity of the energy irradiation based on the detected temperature;
A method for manufacturing a semiconductor device, characterized in that:

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