JP2024012439A5 - - Google Patents

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Publication number
JP2024012439A5
JP2024012439A5 JP2023186416A JP2023186416A JP2024012439A5 JP 2024012439 A5 JP2024012439 A5 JP 2024012439A5 JP 2023186416 A JP2023186416 A JP 2023186416A JP 2023186416 A JP2023186416 A JP 2023186416A JP 2024012439 A5 JP2024012439 A5 JP 2024012439A5
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JP
Japan
Prior art keywords
conductor
region
transistor
insulator
oxide semiconductor
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JP2023186416A
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English (en)
Japanese (ja)
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JP7559181B2 (ja
JP2024012439A (ja
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Priority claimed from JP2020055298A external-priority patent/JP2020115556A/ja
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Publication of JP2024012439A5 publication Critical patent/JP2024012439A5/ja
Priority to JP2024161040A priority Critical patent/JP2025016437A/ja
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Publication of JP7559181B2 publication Critical patent/JP7559181B2/ja
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JP2023186416A 2015-03-03 2023-10-31 半導体装置 Active JP7559181B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024161040A JP2025016437A (ja) 2015-03-03 2024-09-18 半導体装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2015040858 2015-03-03
JP2015040858 2015-03-03
JP2020055298A JP2020115556A (ja) 2015-03-03 2020-03-26 半導体装置
JP2022016905A JP2022062195A (ja) 2015-03-03 2022-02-07 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2022016905A Division JP2022062195A (ja) 2015-03-03 2022-02-07 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024161040A Division JP2025016437A (ja) 2015-03-03 2024-09-18 半導体装置

Publications (3)

Publication Number Publication Date
JP2024012439A JP2024012439A (ja) 2024-01-30
JP2024012439A5 true JP2024012439A5 (enrdf_load_stackoverflow) 2024-04-26
JP7559181B2 JP7559181B2 (ja) 2024-10-01

Family

ID=56897745

Family Applications (5)

Application Number Title Priority Date Filing Date
JP2016039310A Active JP6683503B2 (ja) 2015-03-03 2016-03-01 半導体装置
JP2020055298A Withdrawn JP2020115556A (ja) 2015-03-03 2020-03-26 半導体装置
JP2022016905A Withdrawn JP2022062195A (ja) 2015-03-03 2022-02-07 半導体装置
JP2023186416A Active JP7559181B2 (ja) 2015-03-03 2023-10-31 半導体装置
JP2024161040A Pending JP2025016437A (ja) 2015-03-03 2024-09-18 半導体装置

Family Applications Before (3)

Application Number Title Priority Date Filing Date
JP2016039310A Active JP6683503B2 (ja) 2015-03-03 2016-03-01 半導体装置
JP2020055298A Withdrawn JP2020115556A (ja) 2015-03-03 2020-03-26 半導体装置
JP2022016905A Withdrawn JP2022062195A (ja) 2015-03-03 2022-02-07 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024161040A Pending JP2025016437A (ja) 2015-03-03 2024-09-18 半導体装置

Country Status (1)

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JP (5) JP6683503B2 (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6871722B2 (ja) * 2016-11-17 2021-05-12 株式会社半導体エネルギー研究所 半導体装置
US20190348537A1 (en) * 2016-12-27 2019-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP2018206828A (ja) * 2017-05-31 2018-12-27 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
WO2019003047A1 (ja) * 2017-06-27 2019-01-03 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US11101386B2 (en) * 2017-08-04 2021-08-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102630641B1 (ko) 2018-01-25 2024-01-30 삼성디스플레이 주식회사 표시장치 및 그의 제조방법
CN119380776A (zh) * 2018-03-29 2025-01-28 株式会社半导体能源研究所 存储装置及电子设备
US11636809B2 (en) 2019-11-29 2023-04-25 Chengdu Boe Optoelectronics Technology Co., Ltd. Display substrate and display device
KR20220106914A (ko) * 2019-11-29 2022-08-01 보에 테크놀로지 그룹 컴퍼니 리미티드 어레이 기판 및 그 제조 방법, 디스플레이 디바이스 및 디스플레이 기판
KR20210086898A (ko) 2019-12-31 2021-07-09 삼성디스플레이 주식회사 표시 장치 및 그 제조방법
JP2023055740A (ja) * 2021-12-17 2023-04-18 株式会社半導体エネルギー研究所 剥離方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1729719B (zh) * 2002-12-19 2010-09-15 株式会社半导体能源研究所 显示装置和显示装置的制作方法
JP5046529B2 (ja) * 2005-02-25 2012-10-10 株式会社半導体エネルギー研究所 半導体装置
JP2009238866A (ja) * 2008-03-26 2009-10-15 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
JP5460108B2 (ja) * 2008-04-18 2014-04-02 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US8766269B2 (en) * 2009-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and electronic device
CN104979369B (zh) * 2010-03-08 2018-04-06 株式会社半导体能源研究所 半导体器件及其制造方法
WO2011145468A1 (en) * 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
TWI582999B (zh) * 2011-03-25 2017-05-11 半導體能源研究所股份有限公司 場效電晶體及包含該場效電晶體之記憶體與半導體電路
US9093538B2 (en) * 2011-04-08 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8446171B2 (en) * 2011-04-29 2013-05-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing unit
TWI556319B (zh) * 2011-11-30 2016-11-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
US20130187150A1 (en) * 2012-01-20 2013-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9099560B2 (en) * 2012-01-20 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20230004930A (ko) 2012-04-13 2023-01-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6026844B2 (ja) * 2012-10-17 2016-11-16 株式会社半導体エネルギー研究所 半導体装置
KR102238682B1 (ko) * 2013-02-28 2021-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
JP6376788B2 (ja) 2013-03-26 2018-08-22 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US20150008428A1 (en) * 2013-07-08 2015-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP6322503B2 (ja) * 2013-07-16 2018-05-09 株式会社半導体エネルギー研究所 半導体装置
TWI632688B (zh) * 2013-07-25 2018-08-11 半導體能源研究所股份有限公司 半導體裝置以及半導體裝置的製造方法
JP2015053477A (ja) * 2013-08-05 2015-03-19 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
US9443987B2 (en) * 2013-08-23 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

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